Ads 8332
Ads 8332
Ads 8332
ADS8331, ADS8332
SBAS363E – DECEMBER 2009 – REVISED AUGUST 2016
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
ADS8331, ADS8332
SBAS363E – DECEMBER 2009 – REVISED AUGUST 2016 www.ti.com
Table of Contents
1 Features .................................................................. 1 9.2 Functional Block Diagram ....................................... 20
2 Applications ........................................................... 1 9.3 Feature Description................................................. 20
3 Description ............................................................. 1 9.4 Device Functional Modes........................................ 22
9.5 Programming........................................................... 29
4 Revision History..................................................... 2
5 Companion Products............................................. 3 10 Application and Implementation........................ 37
10.1 Application Information.......................................... 37
6 Device Comparison ............................................... 4
10.2 Typical Applications ............................................. 41
7 Pin Configuration and Functions ......................... 4
11 Power Supply Recommendations ..................... 44
8 Specifications......................................................... 6
12 Layout................................................................... 44
8.1 Absolute Maximum Ratings ...................................... 6
12.1 Layout Guidelines ................................................. 44
8.2 ESD Ratings.............................................................. 6
12.2 Layout Example .................................................... 46
8.3 Recommended Operating Conditions....................... 6
8.4 Thermal Information .................................................. 6 13 Device and Documentation Support ................. 47
13.1 Documentation Support ........................................ 47
8.5 Electrical Characteristics: VA = 2.7 V ....................... 7
13.2 Related Links ........................................................ 47
8.6 Electrical Characteristics: VA = 5 V .......................... 9
13.3 Receiving Notification of Documentation Updates 47
8.7 Timing Requirements: VA = 2.7 V .......................... 11
13.4 Community Resources.......................................... 47
8.8 Timing Characteristics: VA = 5 V ............................ 12
13.5 Trademarks ........................................................... 47
8.9 Typical Characteristics: DC Performance ............... 14
13.6 Electrostatic Discharge Caution ............................ 47
8.10 Typical Characteristics: AC Performance ............. 17
13.7 Glossary ................................................................ 48
9 Detailed Description ............................................ 20
9.1 Overview ................................................................. 20 14 Mechanical, Packaging, and Orderable
Information ........................................................... 48
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
• Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section ................................................................................................. 1
• Changed name of last column in Low-Power, High-Speed, SAR Converter Family table..................................................... 4
• Deleted 4-channel and 8-channel rows from 14-Bit Pseudo-Diff resolution in Low-Power, High-Speed, SAR
Converter Family table ........................................................................................................................................................... 4
• Added last paragraph to Start of a Conversion section........................................................................................................ 25
• Changed VA value from 3.3 V to 2.7 V and VREF value from 4.096 V to 2.5 V.................................................................... 38
5 Companion Products
6 Device Comparison
RESOLUTION CHANNELS fS ≤ 250 kSPS 250 kSPS < fS ≤ 500 kSPS 500 kSPS < fS ≤ 1 MSPS
8 — ADS8698 —
18 bits
4 — ADS8694 —
ADS8344 ADS8688
8 —
ADS8345 ADS8688A
16 bits ADS8341 ADS8684
4 ADS8342 —
ADS8684A
ADS8343
TLC3548
8 ADS8678 —
TLC3578
14 bits
TLC3544
4 ADS8674 ADS7263
TLC3574
MUXOUT
IN1 1 24 IN0
COM
IN2 2 23 COM
IN3
IN2
IN1
IN0
IN3 3 22 MUXOUT
21
23
22
20
24
19
IN4/NC(3) 4 21 ADCIN
IN5/NC(3) 5 20 AGND
IN6/NC(3) 6 ADS8331 19 REF- IN4/NC(1) 1 18 ADCIN
IN7/NC(3) 7 ADS8332 18 REF+ (1)
IN5/NC 2 17 AGND
RESET 8 17 VA
(1)
EOC/INT/CDI 9 16 VBD IN6/NC 3 16 REF-
ADS8331
SCLK 10 15 CONVST (1) ADS8332
IN7/NC 4 15 REF+
FS/CS 11 14 DGND
SDI 12 13 RESET 5 Thermal Pad (2) 14 VA
SDO
(Bottom Side)
EOC/INT/CDI 6 13 VBD
11
12
10
9
8
7
SCLK
SDO
DGND
CONVST
FS/CS
SDI
8 Specifications
8.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
INX, MUXOUT, ADCIN, REF+ to AGND –0.3 VA + 0.3
COM, REF– to AGND –0.3 0.3
Voltage VA to AGND –0.3 7 V
VBD to DGND –0.3 7
AGND to DGND –0.3 0.3
Digital input voltage to DGND –0.3 VBD + 0.3 V
Digital output voltage to DGND –0.3 VBD + 0.3 V
4×4 Power dissipation (TJMax – TA) / RθJA W
VQFN-24
Package RθJA thermal impedance 47 °C/W
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability.
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
(4)
VIN = 2.5 VPP at 1 kHz –101
THD Total harmonic distortion dB
VIN = 2.5 VPP at 10 kHz –95
ADS8331I, ADS8332I 88
VIN = 2.5 VPP at 1 kHz
ADS8331IB, ADS8332IB 89
SNR Signal-to-noise ratio dB
ADS8331I, ADS8332I 86.5
VIN = 2.5 VPP at 10 kHz
ADS8331IB, ADS8332IB 87.5
ADS8331I, ADS8332I 87.5
VIN = 2.5 VPP at 1 kHz
ADS8331IB, ADS8332IB 88.5
SINAD Signal-to-noise + distortion dB
ADS8331I, ADS8332I 86
VIN = 2.5 VPP at 10 kHz
ADS8331IB, ADS8332IB 87
VIN = 2.5 VPP at 1 kHz 103
SFDR Spurious-free dynamic range dB
VIN = 2.5 VPP at 10 kHz 98
VIN = 2.5 VPP at 1 kHz 125
Crosstalk dB
VIN = 2.5 VPP at 100 kHz 108
INX – COM with MUXOUT tied to ADCIN 17
–3-dB small-signal bandwidth MHz
ADCIN – COM 30
(1) Ideal input span; does not include gain or offset error.
(2) LSB means least significant bit.
(3) Measured relative to an ideal full-scale input (INX – COM) of 2.5 V when VA = 2.7 V.
(4) Calculated on the first nine harmonics of the input frequency.
(5) The ADS8331, ADS8332 operates with VA from 2.7 V to 5.5 V, and VREF between 1.2 V and VA. However, the device may not meet the
specifications listed in the Electrical Characteristics when VA is from 3.6 V to 4.5 V.
(6) Can vary ±30%.
(1) Ideal input span; does not include gain or offset error.
(2) LSB means least significant bit.
(3) Measured relative to an ideal full-scale input (INX – COM) of 4.096 V when VA = 5 V.
(4) Calculated on the first nine harmonics of the input frequency.
(5) The ADS8331, ADS8332 operates with VA from 2.7 V to 5.5 V, and VREF between 1.2 V and VA. However, the device may not meet the
specifications listed in the Electrical Characteristics when VA is from 3.6 V to 4.5 V.
(6) Can vary ±30%.
(1) All input signals are specified with tr = tf = 1.5 ns (10% to 90% of VBD) and timed from a voltage level of (VIL + VIH) / 2.
(2) See the timing diagrams.
(3) The EOC and EOS signals are the inverse of each other.
(4) Applies to the 5th or 17th rising SCLK when sending 4-bit or 16-bit commands, respectively, to the ADS8331, ADS8332.
(1) All input signals are specified with tr = tf = 1.5 ns (10% to 90% of VBD) and timed from a voltage level of (VIL + VIH) / 2.
(2) See the timing diagrams.
(3) The EOC and EOS signals are the inverse of each other.
(4) Applies to the 5th or 17th rising SCLK when sending 4-bit or 16-bit commands, respectively, to the ADS8331, ADS8332.
tWL1
CONVST
EOC
(active low)
tH1 tSU2
CS tSU5
tSCLK
SCLK
CONVST
CS
tSU3 tWL2 tH4
SCLK
tWH2
tSU5
High-Z High-Z
SDO MSB MSB - 1 MSB - 2 MSB - 3 LSB TAG2 TAG1 TAG0
tD4
Figure 2. Read While Converting (Shown With Auto-Trigger Mode at 500 kSPS)
tSU6
CS
tH5
tSU3
SCLK
tH3
SDI MSB MSB - 1 MSB - 2 LSB + 1 LSB Don’t Care
tD3 tD1 tD2 tD4
CS
tH1
EOC
(active low)
tD5
INT
(active low)
3 3
VA = VBD = 2.7V VA = VBD = 5.0V
VREF = 2.500V VREF = 4.096V
2 2
1 1
ILE (LSB)
ILE (LSB)
0 0
-1 -1
-2 -2
-3 -3
0000h 4000h 8000h C000h FFFFh 0000h 4000h 8000h C000h FFFFh
Output Code Output Code
Figure 5. Integral Linearity Error vs Code Figure 6. Integral Linearity Error vs Code
3 3
VA = VBD = 2.7V VA = VBD = 5.0V
VREF = 2.500V VREF = 4.096V
2 2
1 1
DLE (LSB)
DLE (LSB)
0 0
-1 -1
-2 -2
-3 -3
0000h 4000h 8000h C000h FFFFh 0000h 4000h 8000h C000h FFFFh
Output Code Output Code
Figure 7. Differential Linearity Error vs Code Figure 8. Differential Linearity Error vs Code
8.0 500
7.5
VREF = 4.096V VREF = 4.096V
7.0 450
Nap Current (mA)
VREF = 2.500V
6.0 400
5.5
5.0 350
4.5
4.0 300
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
4.5
4.6
4.7
4.8
4.9
5.0
5.1
5.2
5.3
5.4
5.5
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
4.5
4.6
4.7
4.8
4.9
5.0
5.1
5.2
5.3
5.4
5.5
VA (V) VA (V)
Figure 9. Analog Supply Current vs Analog Supply Voltage Figure 10. Analog Supply Current in NAP Mode vs
Analog Supply Voltage
4 60
3
40 VA = VBD = 2.7V
VA = VBD = 2.7V VREF = 2.500V
2
VREF = 2.500V
20
1
0 0
0 50 100 150 200 250 300 350 400 450 -50 -25 0 25 50 75 100
Sampling Rate (kHz) Temperature (°C)
Figure 11. Analog Supply Current vs Sampling Rate in Auto- Figure 12. Deep Power-Down Current vs Temperature
NAP Mode
12.2 4
3
D Gain (LSB relative to +25°C)
VA = VBD = 2.7V
11.7 2 VREF = 2.500V
VREF = 4.096V
Frequency (MHz)
VREF = 2.500V 1
11.2 0
-1 VA = VBD = 5.0V
VREF = 4.096V
10.7 -2
-3
10.2 -4
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
4.5
4.6
4.7
4.8
4.9
5.0
5.1
5.2
5.3
5.4
5.5
Figure 13. Internal Clock Frequency vs Figure 14. Change in Gain vs Temperature
Analog Supply Voltage
6 1.0
5 0.8
D Offset (LSB relative to +25°C)
4
DIA (mA relative to +25°C)
Figure 15. Change in Offset vs Temperature Figure 16. Change in Analog Supply Current vs
Temperature
Figure 17. Change in Digital Supply Current vs Temperature Figure 18. Change in Internal Clock Frequency vs
Temperature
25
D Nap Current Relative to +25°C (mA)
VA = VBD = 2.7V
20 VREF = 2.500V
15
10
5
VA = VBD = 5.0V
0
VREF = 4.096V
-5
-10
-15
-20
-25
-50 -25 0 25 50 75 100
Temperature (°C)
1665 1643
1088
768
53 40 0 0
7FFD 7FFE 7FFF 8000 8001 7FFD 7FFE 7FFF 8000 8001
Code Code
Figure 20. Output Code Histogram for a DC Input Figure 21. Output Code Histogram for a DC Input
(8192 Conversions) (8192 Conversions)
0 0
VA = VBD = 2.7V VA = VBD = 5.0V
-20 VREF = 2.500V -20 VREF = 4.096V
-40 -40
Amplitude (dB)
Amplitude (dB)
-60 -60
-80 -80
-100 -100
-120 -120
-140 -140
-160 -160
0 50 100 150 200 250 0 50 100 150 200 250
Frequency (kHz) Frequency (kHz)
-40 -40
Amplitude (dB)
Amplitude (dB)
-60 -60
-80 -80
-100 -100
-120 -120
-140 -140
-160 -160
0 50 100 150 200 250 0 50 100 150 200 250
Frequency (kHz) Frequency (kHz)
SNR (dB)
90
VA = VBD = 2.7V
VREF = 2.500V
89 85
88 VA = VBD = 2.7V
VREF = 2.500V
87
80
-50 -25 0 25 50 75 100 1 10 100 250
Temperature (°C) fIN (kHz)
-75 95
-80 90
SFDR (dB)
THD (dB)
-95 75
VA = VBD = 2.7V
-100 VREF = 2.500V 70
-105 65
1 10 100 250 1 10 100 250
fIN (kHz) fIN (kHz)
Figure 28. Total Harmonic Distortion vs Input Frequency Figure 29. Spurious-Free Dynamic Range vs Input
Frequency
95 16.0
VA = VBD = 5.0V VA = VBD = 5.0V
VREF = 4.096V 15.5
VREF = 4.096V
90
15.0
14.5
85
ENOB (Bits)
SINAD (dB)
Figure 30. Signal-to-Noise + Distortion vs Input Frequency Figure 31. Effective Number of Bits vs Input Frequency
Crosstalk (dB)
PSRR (dB)
Figure 32. Power-Supply Rejection Ratio vs Power-Supply Figure 33. Crosstalk vs Input Frequency
Ripple Frequency
9 Detailed Description
9.1 Overview
The ADS833x is a high-speed, low-power, successive approximation register (SAR) analog-to-digital converter
(ADC) that uses an external reference. The architecture is based on charge redistribution, which inherently
includes a sample/hold function.
The ADS833x has an internal clock that is used to run the conversion. However, the ADS833x can be
programmed to run the conversion based on the external serial clock (SCLK).
The analog input to the ADS833x is provided to two input pins: one of the INX input channels and the shared
COM pin. When a conversion is initiated, the differential input on these pins is sampled on the internal capacitor
array. While a conversion is in progress, both INX and COM inputs are disconnected from any internal function.
The ADS8331 has four analog inputs while the ADS8332 has eight inputs. All inputs share the same common
pin, COM. Both the ADS8331 and ADS8332 can be programmed to select a channel manually or can be
programmed into the auto channel select mode to sweep through the input channels automatically.
50W 4pF
INX ESD
40pF AGND
55W VA
COM ESD AGND
where
• n = resolution of the converter (n = 16 for the ADS833x).
• tSAMPLE_MIN = minimum acquisition time. (1)
The minimum value of tSAMPLE in Electrical Characteristics: VA = 2.7 V and Electrical Characteristics: VA = 5 V is
238 ns (3 CCLKs with the internal oscillator at 12.6 MHz). Substituting these values for n and tSAMPLE_MIN into
Equation 1 shows f–3 dB must be at least 7.9 MHz. This bandwidth can be relaxed if the acquisition time is
increased or an RC filter is added between the driving operational amplifier and the corresponding input channel
(see Texas Instruments' Application Report, Determining Minimum Acquisition Times for SAR ADCs When a
Step Function is Applied to the Input (SBAA173) and associated references for additional information, available
for download at www.ti.com). The OPA365 used in the source-follower (unity-gain) configuration is shown in
Figure 35 with recommended values for the RC filter.
COM
MUXOUT ADCIN 5V
2.048VDC
20W VA
OPA211 INX ADS8331
600W
ADS8332
1000pF
Input Signal
COM
(-2V to +2V) 600W
9.4.1 Reference
The ADS833x can operate with an external reference with a range from 1.2 V to 4.2 V. A clean, low-noise
reference voltage on this pin is required to ensure good converter performance. A low-noise band-gap reference
such as the REF5025 or REF5040 can be used to drive this pin. A 10-μF ceramic bypass capacitor is required
between the REF+ and REF– pins of the converter. This capacitor should be placed as close as possible to the
pins of the device. The REF– pin should not be connected to the AGND pin of the converter; instead, the REF–
pin must be connected to the analog ground plane with a separate via.
CFR_D10
CS
SCLK
< 30ns
Ch 2
Ch 7 Ch 3
Ch 6 Ch 4
Ch 5
CCLK
Channel # N-1 N
(1) Auto channel select should be used with Auto-Trigger mode and TAG bit output enabled.
Manual Channel select with Auto-Trigger mode enabled is generally used when continuous conversions from a
single channel are desired. In this mode, cycling the input mux to change the channel requires that conversions
are halted by setting the converter to Manual-Trigger mode. When the proper input channel is selected, the
converter can be placed back to Auto-Trigger mode to continue continuous conversions from the new channel.
The default acquisition time is three conversion clock (CCLK) cycles. Figure 41 shows the timing diagram for
CONVST, EOC, and Auto-NAP power-down signals in Manual-Trigger mode. As shown in the diagram, the
device wakes up after a conversion is triggered by the CONVST pin going low. However, a conversion is not yet
started at this time. The conversion start signal to the analog core of the chip is internally generated no less than
six conversion clock (CCLK) cycles later, to allow at least three CCLKs for wake up and three CCLKs for
acquisition. The ADS833x enters Nap Power-Down mode one conversion cycle after the end of conversion
(EOC).
CCLK
CONVST
CONVST_OUT
3 + 3 = 6 Cycles
(internal) 1 Cycle
NAP_ACTIVE
(internal)
EOC
(active low)
Figure 41. Timing for CONVST, EOC, and Auto-NAP Power-Down Signals in Manual-Trigger Mode (Three
Conversion Clock Cycles for Acquisition)
The ADS833x can support sampling rates of up to 500 kSPS in Auto-Trigger mode. This rate is selectable by
programming the CFR_D8 bit in the Configuration register. In 500-kSPS mode, consecutive conversion start
pulses to the analog core are generated 21 conversion clock cycles apart. In 250-kSPS mode, consecutive
conversion-start pulses are 42 conversion clock cycles apart. The Nap and Deep Power-Down modes are
available with either sampling rate; however, Auto-NAP mode is available only with a sampling rate of 250 kSPS
when Auto-Trigger mode is enabled. The analog core cannot be powered down when the Auto-NAP mode
sampling rate is 500 kSPS because at that rate, there is no period of time when the analog core is not actively
being used.
Figure 42 shows the timing diagram for conversion start and Auto-NAP power-down signals for a 250-kSPS
sampling rate in Auto-Trigger mode. For a 16-bit ADC output word, consecutive new conversion start pulses are
generated 2 × (18 + 3) cycles apart. NAP_ACTIVE (the signal to power down the analog core in Nap and Auto-
NAP modes) goes low six (3 + 3) conversion clock cycles before the conversion start falling edge, thus powering
up the analog core. It takes three conversion clock cycles after NAP_ACTIVE goes low to power up the analog
core. The analog core is powered down a cycle after the end of a conversion. For a 16-bit ADC with a 500-kSPS
sampling rate and three conversion clock cycle sampling, consecutive conversion start pulses are generated 21
conversion clock cycles apart.
1 2 3 19 20 21 37 38 42 43
CCLK
CONVST_OUT
(internal)
EOC
(active low)
NAP_ACTIVE
(internal)
Figure 42. Timing for Conversion Start and Auto-NAP Power-Down Signals in Auto-Trigger Mode (250-
kSPS Sampling and Three Conversion Clock Cycles for Acquisition)
Timing diagrams for reading from the ADS833x with various trigger and power-down modes are shown in
Figure 43 through Figure 45. The total (acquisition + conversion) times for the different trigger and power-down
modes are listed in Table 3.
CONVST N (N+1)
EOC
EOC
EOS
EOS
EOC
Conversion N Sample (N + 1) Conversion (N + 1)
(active low)
tH2 tSU1
Read While Converting
CS
Read Result (N - 1)
Figure 43. Read While Converting vs Read While Sampling (Manual-Trigger Mode)
BLANKSPACE
CONVST N (N+1)
EOC
EOC
EOS
EOS
Note Note
Converter State Wakeup Sample N Conversion N (1) Power-Down Wakeup Sample (N + 1) Conversion (N + 1) (1) Power-Down
tH2 tH2
Read While Converting
Note Read Result Note Note Read Result Note
CS (2) (N - 1) (3) (2)
N (3)
tSU2 tSU2
Read While Sampling
Note Read Result Note Note Read Result Note
CS (2) (N - 1) (3) (2) N (3)
(1) Converter is in acquisition mode between end of conversion and activation of Nap or Deep Power-Down mode.
(2) Command on SDI pin to wake-up converter (minimum of four SCLKs).
(3) Command on SDI pin to place converter into Nap or Deep Power-Down mode (minimum of 16 SCLKs).
Figure 44. Read While Converting vs Read While Sampling With Nap or Deep Power Down
(Manual-Trigger Mode)
CONVST N (N+1)
EOC
(active low)
EOC
EOC
EOS
EOS
Note Note
Converter State Wakeup Sample N Conversion N (1) Power-Down Wakeup Sample (N + 1) Conversion (N + 1) (1) Power-Down
³ 3 CCLK = 18 CCLK ³ 3 CCLK = 18 CCLK
³ 6 CCLK ³ 6 CCLK
Read While Converting tH2 tSU1 tH2 tSU1
Read Result Read Result
CS (N - 1) N
CONVST N (N+1)
EOC
(active low)
EOC
EOC
EOS
EOS
Note Note
Converter State Wakeup Sample N Conversion N (1) Power-Down Wakeup Sample (N + 1) Conversion (N + 1) (1) Power-Down
³ 3 CCLK = 18 CCLK ³ 3 CCLK = 18 CCLK
(1) Time between end of conversion and Nap Power Down mode is 1 CCLK.
(2) Command on SDI to wake-up converter (minimum of four SCLKs).
Figure 45. Read While Converting vs Read While Sampling With Auto-NAP Power Down
9.5 Programming
Programming (continued)
NOTE
There are cases where a cycle can be anywhere from 4 SCLKs up to 24 SCLKs,
depending on the read mode combination. See Table 4 for details.
(1) The first four bits from SDO after the falling edge of FS/CS are the four MSBs from the previous conversion result. The next 12 bits from
SDO are the contents of the CFR.
(2) These commands apply only to the ADS8332; they are reserved (not available) for the ADS8331.
NOTE
Whenever SDO is not in 3-state (that is, when FS/CS is low and SCLK is running), a
portion of the conversion result is output at the SDO pin. The number of bits depends on
how many SCLKs are supplied. For example, a manual channel select command cycle
requires 4 SCLKs. Therefore, four MSBs of the conversion result are output at SDO. The
exception is when SDO outputs all 1s during the cycle immediately after any reset (POR,
software reset, or external reset).
If SCLK is used as the conversion clock (CCLK) and a continuous SCLK is used, it is not possible to clock out all
16 bits from SDO during the sampling time (6 SCLKs) because of the quiet zone requirement. In this case, it is
better to read the conversion result during the conversion time (36 SCLKs or 48 SCLKs in Auto-NAP mode).
MICROCONTROLLER
Program Device #1: CFR_D5 = ‘1’ Program Devices #2 and #3: CFR_D5 = ‘0’
When multiple converters are used in daisy-chain mode, the first converter is configured in regular mode while
the rest of the converters downstream are configured in daisy-chain mode. When a converter is configured in
daisy-chain mode, the CDI input data go straight to the output register. Therefore, the serial input data passes
through the converter with either a 16 SCLK (if the TAG feature is disabled) or 24-SCLK delay, as long as CS is
active. See Figure 47 for detailed timing. In this timing diagram, the conversion in each converter is performed
simultaneously.
Manual Trigger, Read While Sampling
(Use internal CCLK, EOC active low, and TAG mode disabled)
CONVST #1
CONVST #2
CONVST #3
EOC
EOS
EOS
EOC #1 Conversion N
(active low)
tCONV = 18 CCLK tSAMPLE1 = 3 CCLK min
tSU2
CS #1
SCLK #1
SCLK #2
SCLK #3 1. . . . . . . . . . . . . .16 1. . . . . . . . . . . . . .16 1. . . . . . . . . . . . . .16
High-Z High-Z
SDO #3 Conversion N Conversion N Conversion N
from Device #3 from Device #2 from Device #1
SDI #1
SDI #2 Don't Care Configure Read Data Read Data Don't Care
SDI #3
Figure 47. Simplified Dasiy-Chain Mode Timing With Shared CONVST and Continuous CS
The multiple CS signals must be handled with care when the converters are operating in daisy-chain mode. The
different chip select signals must be low for the entire data transfer (in this example, 48 bits for three
conversions). The first 16-bit word after the falling chip select is always the data from the chip that received the
chip select signal.
Copyright © 2009–2016, Texas Instruments Incorporated Submit Documentation Feedback 33
Product Folder Links: ADS8331 ADS8332
ADS8331, ADS8332
SBAS363E – DECEMBER 2009 – REVISED AUGUST 2016 www.ti.com
Case 1: If chip select is not toggled (CS stays low), the next 16 bits of data are from the upstream converter, and
so on. This configuration is shown in Figure 47.
Case 2: If the chip select is toggled during a daisy-chain mode data transfer cycle, as illustrated in Figure 48, the
same data from the converter are read out again and again in all three discrete 16-bit cycles. This state is not a
desired result.
Manual Trigger, Read While Sampling
(Use internal CCLK, EOC active low, and TAG mode disabled)
CONVST #1
CONVST #2
CONVST #3 EOC
EOS
EOS
EOC #1 Conversion N
(active low)
tCONV = 18 CCLK tSAMPLE1 = 3 CCLK min
tWH1 tWH1 tSU2
CS #1
SCLK #1
SCLK #2
SCLK #3 1. . . . . . . . . . . . . .16 1. . . . . . . . . . . . . .16 1. . . . . . . . . . . . . .16
SDI #1
SDI #2 Don't Care Configure Don't Care Read Data Don't Care Read Data Don't Care
SDI #3
Figure 48. Simplified Daisy-Chain Mode Timing With Shared CONVST and Noncontinuous CS
Figure 49 shows a slightly different scenario where CONVST is not shared with the second converter. Converters
#1 and #3 have the same CONVST signal. In this case, converter #2 simply passes previous conversion data
downstream.
Manual Trigger, Read While Sampling
(Use internal CCLK, EOC active low, and TAG mode disabled)
CONVST #1
CONVST #3
CONVST #2 EOC
EOS
EOS
EOC #1 Conversion N
(active low)
tCONV = 18 CCLK tSAMPLE1 = 3 CCLK min
tSU2
CS #1
SCLK #1
SCLK #2
SCLK #3 1. . . . . . . . . . . . . .16 1. . . . . . . . . . . . . .16 1. . . . . . . . . . . . . .16
High-Z High-Z
SDO #3 Conversion N Conversion (N - 1) Conversion N
from Device #3 from Device #2(1) from Device #1
SDI #1
SDI #2 Don't Care Configure Read Data Read Data Don't Care
SDI #3
Figure 49. Simplified Daisy-Chain Mode Timing with Separate CONVST and Continuous CS
The number of SCLKs required for a serial read cycle depends on the combination of different read modes, TAG
mode, daisy-chain mode, and the manner in which a channel is selected (for example, Auto Channel Select
mode). The required number of SCLKs for different readout modes are listed in Table 7.
SCLK skew between converters in a daisy-chain configuration can affect the maximum frequency of SCLK. The
skew can also be affected by supply voltage and loading. It may be necessary to slow down the SCLK when the
devices are configured in daisy-chain mode.
The internal POR circuit is activated when power is initially applied to the converter. This internal circuit
eliminates the need for commands to be sent to the converter after power on to set the default mode of operation
(see the Power-On Sequence Timing section for further details).
Software reset can be used to place the converter in the default mode by setting the CFR_D0 bit to 0 in the
Configuration register (see Table 5). This bit is automatically returned to 1 (default) after the converter is reset.
This reset method is useful in systems that cannot dedicate a separate control signal to the RESET pin. In these
situations, the RESET pin must be connected to VBD for the ADS833x to operate properly.
If communication in the system becomes corrupted and a software reset cannot be issued, the RESET pin can
be used to reset the device manually. To reset the device and return the device to default mode, this pin must
held low for a minimum of 25 ns.
After the ADS833x detects a reset condition, the minimum time before the device can be reconfigured by FS/CS
going low and data clocking in on SDI is 2 μs.
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
VA=5V
- VA=5V
REF2041
1k
VIN VREF +
+ OPA320
RBUF_FLT
1 µF ENABLE 0.220
0.220 1 µF ` REF+ VA 1 µF
V+
VBIAS 1 µF 22 µF
GND ADS8331/32
10 µF
REF- AGND
VA=5V
The OPA320 is a precision, high bandwidth (20 MHz), low-noise (7 nV / √Hz) operational amplifier. The low-
noise, and low power consumption of this amplifier makes the OPA320 a good choice to drive the reference input
of the ADS833x. The REF+ input is bypassed with a 22-μF bypass capacitor. The 22-µF reference bypass
capacitor is high enough to make the OPA320 amplifier unstable, therefore a small resistor (RBUF_FLT) is required
to isolate the amplifier output and improve stability. The value of RBUF_FLT is dependent on the output impedance
VA=2.7V
- VA=2.7V
REF2025
1k
VIN VREF +
+ OPA320
RBUF_FLT
1 µF ENABLE 0.220
0.220 1 µF REF+ VA 1 µF
V+
VBIAS 1 µF 22 µF
GND ADS8331/32
10 µF
REF- AGND
VA=2.7V
RFLT ” 50
MUXOUT ADCIN
V
AINx
1 +
f 3 dB CFLT • 450 pF ADS8331/32
2S u RFLT u CFLT
COM
GND
VA=5V
-
REF2041
1k +
VIN VREF + OPA320
RBUF_FLT
1 µF ENABLE 0.220
0.220 1 µF
VBIAS VA=5V
GND 22 µF
10 µF
COM
Figure 54. FFT Plot Showing Performance of ADS8331, ADS8332 With a 10-kHz Input Signal at 500 kSPS
- R1=30
OPA320 MUXOUT to ADCIN Amplifier:
Mode of Operation: <250kSPS, Manual Trigger +
+ OPA320
Mode, Auto-Nap Power Down Disabled,
C1=1 nF
Requires Acquisition Time > 1000nS
COG/NPO
VA=2.7V
MUXOUT ADCIN
- 220
Ch0 2.7V
+ VA
+ OPA333
0.047 µF Cx
VREF=2.5V,
COG/NPO
Input Signal VA=2.7V
(50mV to 3.0V) SDO
FS/CS
ADC SDI To
- SCLK Host
220 EOC/INT/CDI
Chn
CONVST
+
+ OPA333 Cn
0.047 µF
COG/NPO MUX
VA=2.7
NOTE:
OPA333 buffer circuit for low-power, slow throughput
applications monitoring DC signals.
When scanning through multiplexer channels, limit the COM
maximum effective sampling rate per channel <10kSPS.
12 Layout
GND
Reference Driver
Output
0.2 Ohm- 0.5 Ohm
22 PF
GND
GND VA
GND VA
REF- REF+
VBD VBD
GND /CONVST
Analog Inputs
COM DGND
IN0 SDO
GND
GND IN1 SDI
IN2 FS/CS
IN3 SCLK
GND
EOC//INT/CDI
IN4/NC
IN5/NC
IN6/NC
IN7/NC
GND /RESET
Analog Inputs
13.5 Trademarks
TMS320, E2E are trademarks of Texas Instruments.
SPI is a trademark of Motorola, Inc.
All other trademarks are the property of their respective owners.
13.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
13.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
www.ti.com 2-Dec-2017
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) (6) (3) (4/5)
ADS8331IBPW ACTIVE TSSOP PW 24 60 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 ADS8331
& no Sb/Br) B
ADS8331IBPWR ACTIVE TSSOP PW 24 2000 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 ADS8331
& no Sb/Br) B
ADS8331IBRGER ACTIVE VQFN RGE 24 3000 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 ADS
& no Sb/Br) 8331
B
ADS8331IBRGET ACTIVE VQFN RGE 24 250 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 ADS
& no Sb/Br) 8331
B
ADS8331IPW ACTIVE TSSOP PW 24 60 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 ADS8331
& no Sb/Br)
ADS8331IPWR ACTIVE TSSOP PW 24 2000 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 ADS8331
& no Sb/Br)
ADS8331IRGER ACTIVE VQFN RGE 24 3000 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 ADS
& no Sb/Br) 8331
ADS8331IRGET ACTIVE VQFN RGE 24 250 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 ADS
& no Sb/Br) 8331
ADS8332IBPW ACTIVE TSSOP PW 24 60 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 ADS8332
& no Sb/Br) B
ADS8332IBPWR ACTIVE TSSOP PW 24 2000 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 ADS8332
& no Sb/Br) B
ADS8332IBRGER ACTIVE VQFN RGE 24 3000 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 ADS
& no Sb/Br) 8332
B
ADS8332IBRGET ACTIVE VQFN RGE 24 250 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 ADS
& no Sb/Br) 8332
B
ADS8332IPW ACTIVE TSSOP PW 24 60 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 ADS8332
& no Sb/Br)
ADS8332IPWR ACTIVE TSSOP PW 24 2000 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 ADS8332
& no Sb/Br)
ADS8332IRGER ACTIVE VQFN RGE 24 3000 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 ADS
& no Sb/Br) 8332
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com 2-Dec-2017
Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) (6) (3) (4/5)
ADS8332IRGET ACTIVE VQFN RGE 24 250 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 ADS
& no Sb/Br) 8332
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 2-Dec-2017
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 2-Dec-2017
Pack Materials-Page 2
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