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NPN Silicon RF Power Transistor: Description: ASI SD1441 Package Style .500 6L FLG

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SD1441

NPN SILICON RF POWER TRANSISTOR


DESCRIPTION:
The ASI SD1441 is a12.5 V epitaxial silicon
NPN plannar transistor. Designed primarily for
VHF communication in the 175 MHz frequency.
PACKAGE STYLE .500 6L FLG
C A

1
FEATURES: 3 2x Ø N
FULL R
• 175 MHz 12.5 V D

• PG = 5.0 dB at 150 W/175 MHz


4
• Omnigold™ Metalization System B
2
E
• Common Emitter configuration .725/18,42
G F

M
K
MAXIMUM RATINGS H
J
I L

IC 22 A DIM M IN IM UM
inches / m m
M AXIM U M
inches / m m

VCBO 36 V A .150 / 3.43 .160 / 4.06


B .045 / 1.14

VCEO 18 V C .210 / 5.33 .220 / 5.59


D .835 / 21.21 .865 / 21.97

VCES 36 V E .200 / 5.08 .210 / 5.33


F .490 / 12.45 .510 / 12.95

VEBO 4.0 V G .003 / 0.08 .007 / 0.18


H .125 / 3.18

PDISS 350 W @ TC = 25 °C I .725 / 18.42


J .970 / 24.64 .980 / 24.89

TJ -65 °C to +200 ° C K .090 / 2.29 .105 / 2.67


L .150 / 3.81 .170 / 4.32

TSTG -65 °C to +150 °C M .285 / 7.24


N .120 / 3.05 .135 / 3.43

θJC 0.5 °C/W


1 = Collecttor 2 = Base 3&4 = Emitter

CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 100 mA 18 V
BVCES IC = 100 mA 36 V
BVEBO IE = 5.0 mA 4.0 V
ICBO VCB = 15 V 5.0 mA
hFE VCE = 5.0 V IC = 5.0 A 10 ---
COB VCB = 12.5 V f = 1.0 MHz 430 pF
PG 5.0 5.5 dB
VCE = 12.5 V POUT = 150 W f = 175 MHz
ηC 60 %

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice.

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