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    2N7002 Surface Mount Silicon N-Channel Enhancement-Mode Mosfet Description

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    Ankur
    This document provides specifications for the CENTRAL SEMICONDUCTOR 2N7002 N-Channel enhancement-mode MOSFET. It details maximum ratings, electrical characteristics, a mechanical outline, typical characteristics, and available services.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    2N7002 Surface Mount Silicon N-Channel Enhancement-Mode Mosfet Description

    Uploaded by

    Ankur
    20 views4 pages
    This document provides specifications for the CENTRAL SEMICONDUCTOR 2N7002 N-Channel enhancement-mode MOSFET. It details maximum ratings, electrical characteristics, a mechanical outline, typical characteristics, and available services.

    Original Description:

    diode

    Original Title

    2N7002

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    This document provides specifications for the CENTRAL SEMICONDUCTOR 2N7002 N-Channel enhancement-mode MOSFET. It details maximum ratings, electrical characteristics, a mechanical outline, typical characteristics, and available services.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    20 views4 pages

    2N7002 Surface Mount Silicon N-Channel Enhancement-Mode Mosfet Description

    Uploaded by

    Ankur
    This document provides specifications for the CENTRAL SEMICONDUCTOR 2N7002 N-Channel enhancement-mode MOSFET. It details maximum ratings, electrical characteristics, a mechanical outline, typical characteristics, and available services.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    2N7002

    SURFACE MOUNT SILICON w w w. c e n t r a l s e m i . c o m


    N-CHANNEL
    ENHANCEMENT-MODE DESCRIPTION:
    MOSFET The CENTRAL SEMICONDUCTOR 2N7002 type is an
    N-Channel enhancement-mode MOSFET manufactured
    by the N-Channel DMOS Process, designed for high
    speed pulsed amplifier and driver applications.

    MARKING CODE: 702

    SOT-23 CASE

    MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS


    Drain-Source Voltage VDS 60 V
    Drain-Gate Voltage VDG 60 V
    Gate-Source Voltage VGS 40 V
    Continuous Drain Current (TC=25°C) ID 115 mA
    Continuous Drain Current (TC=100°C) ID 75 mA
    Continuous Source Current (Body Diode) IS 115 mA
    Maximum Pulsed Drain Current IDM 800 mA
    Maximum Pulsed Source Current ISM 800 mA
    Power Dissipation PD 350 mW
    Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
    Thermal Resistance ΘJA 357 °C/W

    ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)


    SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
    IGSSF VGS=20V 100 nA
    IGSSR VGS=20V 100 nA
    IDSS VDS=60V, VGS=0 1.0 μA
    IDSS VDS=60V, VGS=0, TA=125°C 500 μA
    ID(ON) VDS=10V, VGS=10V 500 mA
    BVDSS ID=10μA 60 105 V
    VGS(th) VDS=VGS, ID=250μA 1.0 2.1 2.5 V
    VDS(ON) VGS=10V, ID=500mA 3.75 V
    VDS(ON) VGS=5.0V, ID=50mA 0.375 V
    VSD VGS=0, IS=11.5mA 1.5 V
    rDS(ON) VGS=10V, ID=500mA 3.7 7.5 Ω
    rDS(ON) VGS=10V, ID=500mA, TA=100°C 13.5 Ω
    rDS(ON) VGS=5.0V, ID=50mA 6.2 7.5 Ω
    rDS(ON) VGS=5.0V, ID=50mA, TA=100°C 13.5 Ω
    gFS VDS=10V, ID=200mA 80 mS

    R6 (9-February 2015)
    2N7002

    SURFACE MOUNT SILICON


    N-CHANNEL
    ENHANCEMENT-MODE
    MOSFET

    ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)


    SYMBOL TEST CONDITIONS TYP MAX UNITS
    Crss VDS=25V, VGS=0, f=1.0MHz 5.0 pF
    Ciss VDS=25V, VGS=0, f=1.0MHz 50 pF
    Coss VDS=25V, VGS=0, f=1.0MHz 25 pF
    Qg(tot) VDS=30V, VGS=4.5V, ID=100mA 0.592 nC
    Qgs VDS=30V, VGS=4.5V, ID=100mA 0.196 nC
    Qgd VDS=30V, VGS=4.5V, ID=100mA 0.148 nC
    ton VDD=30V, ID=200mA, RG=25Ω, RL=150Ω 20 ns
    toff VDD=30V, ID=200mA, RG=25Ω, RL=150Ω 20 ns

    SOT-23 CASE - MECHANICAL OUTLINE

    2 1

    LEAD CODE:
    1) Gate
    2) Source
    3) Drain

    MARKING CODE: 702

    R6 (9-February 2015)
    w w w. c e n t r a l s e m i . c o m
    2N7002

    SURFACE MOUNT SILICON


    N-CHANNEL
    ENHANCEMENT-MODE
    MOSFET

    TYPICAL ELECTRICAL CHARACTERISTICS

    R6 (9-February 2015)
    w w w. c e n t r a l s e m i . c o m
    2N7002

    SURFACE MOUNT SILICON


    N-CHANNEL
    ENHANCEMENT-MODE
    MOSFET

    SERVICES
    • Bonded Inventory
    • Custom Electrical Screening
    • Custom Electrical Characteristic Curves
    • SPICE Models
    • Custom Packaging
    • Package Base Options
    • Custom Device Development / Multi Discrete Modules (MDM™)
    • Bare Die Available for Hybrid Applications

    LIMITATIONS AND DAMAGES DISCLAIMER: In no event shall Central be liable for any collateral, indirect,
    punitive, incidental, consequential, or exemplary damages in connection with or arising out of a purchase order
    or contract or the use of products provided hereunder, regardless of whether Central has been advised of
    the possibility of such damages. Excluded damages shall include, but not be restricted to: cost of removal or
    reinstallation, rework, ancillary costs to the procurement of substitute products, loss of profits, loss of savings, loss
    of use, loss of data, or business interruption. No claim, suit, or action shall be brought against Central more than
    two (2) years after the related cause of action has occurred.

    In no event shall Central’s aggregate liability from any warranty, indemnity, or other obligation arising out of or in
    connection with a purchase order or contract, or any use of any Central product provided hereunder, exceed the
    total amount paid to Central for the specific products sold under a purchase order or contract with respect to which
    losses or damages are claimed. The existence of more than one (1) claim against the specific products sold to
    Buyer under a purchase order or contract shall not enlarge or extend this limit.

    Buyer understands and agrees that the foregoing liability limitations are essential elements of a purchase order
    or contract and that in the absence of such limitations, the material and economic terms of the purchase order or
    contract would be substantially different.
    R6 (9-February 2015)
    w w w. c e n t r a l s e m i . c o m

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