TC7W14FU/FK

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7W14FU, TC7W14FK
Schmitt Inverter

The TC7W14 is high speed C2MOS Schmitt Inverter fabricated

with silicon gate C2MOS technology.
TC7W14FU

It achieves the high speed operation similar to equivalent

LSTTL while maintaining the C2MOS low power dissipation.
Pin configuration and function are the same as the TC7WU04
but the inputs have 25% VCC hysteresis and with its Schmitt
trigger function, the TC7W14 can be used as a line receivers
which will receive slow input signals.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
(SM8)
Features TC7W14FK

• High speed: tpd = 11 ns (typ.) at VCC = 5 V

• Low power dissipation: ICC = 1µA (max) at Ta = 25°C
• High noise immunity: VH = 1.1 V at VCC = 5V
• Output drive capability: 10 LSTTL loads
• Symmetrical output impedance: |IOH| = IOL = 4mA (min)
• ∼ tpHL
Balanced propagation delays: tpLH −
• Wide operating voltage range: VCC (opr) = 2 to 6V
(US8)

Marking Weight
SSOP8-P-0.65: 0.02 g (typ.)
SSOP8-P-0.50A: 0.01 g (typ.)
TC7W14FU
Part No.

7W14
Lot No.

TC7W14FK
Part No.
W
14

Start of commercial production

1992-02
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Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Supply voltage range VCC −0.5 to 7 V

DC input voltage VIN −0.5 to VCC + 0.5 V
DC output voltage VOUT −0.5 to VCC + 0.5 V
Input diode current IIK ±20 mA
Output diode current IOK ±20 mA
DC output current IOUT ±25 mA
DC VCC/ground current ICC ±25 mA
300 (SM8)
Power dissipation PD mW
200 (US8)
Storage temperature range Tstg −65 to 150 °C
Lead temperature (10 s) TL 260 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).

Pin Configuration (top view)

VCC 1Y 3A 2Y
8 7 6 5

1A 3Y 2A GND
1 2 3 4

Logic Diagram Truth Table

A Y
1A 1Y
L H

2A 2Y H L

3A 3Y

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Operating Ranges

Characteristics Symbol Rating Unit

Supply voltage VCC 2 to 6 V

Input voltage VIN 0 to VCC V
Output voltage VOUT 0 to VCC V
Operating temperature range Topr −40 to 85 °C

Electrical Characteristics
DC Electrical Characteristics
Ta = −40
Ta = 25°C
Characteristics Symbol Test Condition to 85°C Unit
VCC (V) Min Typ. Max Min Max
2.0 1.0 1.25 1.5 1.0 1.5
High level VP  4.5 2.3 2.7 3.15 2.3 3.15

Threshold 6.0 3.0 3.5 4.2 3.0 4.2

V
voltage 2.0 0.3 0.65 0.9 0.3 0.9
Low level VN  4.5 1.13 1.6 2.0 1.13 2.0
6.0 1.5 2.3 2.6 1.5 2.6
2.0 0.3 0.6 1.0 0.3 1.0
Hysteresis voltage VH  4.5 0.6 1.1 1.4 0.6 1.4 V
6.0 0.8 1.2 1.7 0.8 1.7
2.0 1.9 2.0  1.9 
IOH = −20 µA 4.5 4.4 4.5  4.4 
High level VOH VIN = VIL 6.0 5.9 6.0  5.9 
IOH = −4 mA 4.5 4.18 4.31  4.13 

Output IOH = −5.2 mA 6.0 5.68 5.80  5.63 

V
voltage 2.0  0 0.1  0.1
IOL = 20 µA 4.5  0 0.1  0.1
Low level VOL VIN = VIH 6.0  0 0.1  0.1
IOL = 4 mA 4.5  0.17 0.26  0.33
IOL = 5.2 mA 6.0  0.18 0.26  0.33
Input leakage current IIN VIN = VCC or GND 6.0   ±0.1  ±1.0 µA
Quiescent supply current ICC VIN = VCC or GND 6.0   1.0  10.0 µA

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AC Electrical Characteristics (CL = 15 pF, VCC = 5 V, Ta = 25°C)
Ta = 25°C
Characteristics Symbol Test Condition Unit
Min Typ. Max
tTLH
Output transition time   4 8 ns
tTHL
tpLH
Propagation delay time   11 21 ns
tpHL

AC Electrical Characteristics (CL = 50 pF, input tr = tf = 6 ns)

Ta = −40
Ta = 25°C
Characteristics Symbol Test Condition to 85°C Unit
VCC (V) Min Typ. Max Min Max
2.0  30 75  95
tTLH
Output transition time  4.5  8 15  19 ns
tTHL
6.0  7 13  16
2.0  42 125  155
tpLH
Propagation delay time  4.5  14 25  31 ns
tpHL
6.0  12 21  26
Input capacitance CIN   5 10  10 pF
Power dissipation
CPD (Note)  28    pF
capacitance

Note: CPD is defined as the value of internal equivalent capacitance of IC which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation hereunder.
ICC (opr) = CPD • VCC • fIN + ICC/3 (per gate)

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Package Dimensions

Weight: 0.02 g (typ.)

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Package Dimensions

Weight: 0.01 g (typ.)

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relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for
Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for
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