(19)

& 
(11) EP 1 700 822 B1
(12) EUROPEAN PATENT SPECIFICATION

(45) Date of publication and mention (51) Int Cl.:

of the grant of the patent: B81C 1/00 (2006.01)
02.12.2009 Bulletin 2009/49

(21) Application number: 05112878.3

(22) Date of filing: 23.12.2005

(54) Anhydrous HF release process for MEMS devices

Befreiungsverfahren durch wasserfreie Flußsäure für MEMS-Bauelemente
Procédé de dégagement avec acide fluoridrique anhydre pour dispositifs MEMS

(84) Designated Contracting States: (74) Representative: Harding, Richard Patrick et al

DE FR GB Marks & Clerk LLP
4220 Nash Court
(30) Priority: 27.12.2004 US 638377 P Oxford Business Park South
Oxford
(43) Date of publication of application: OX4 2RU (GB)
13.09.2006 Bulletin 2006/37
(56) References cited:
(73) Proprietor: Dalsa Semiconductor Inc. WO-A-03/055791
Waterloo, Ontario N2V 2E9 (CA)
• LEE C S ET AL: "MODELING AND
(72) Inventors: CHARACTERIZATION OF GAS-PHASE ETCHING
• Ouellet, Luc OF THERMAL OXIDE AND TEOS OXIDE USING
J2H 2R8, Granby (CA) ANHYDROUS HF AND CH3OH" JOURNAL OF
• Migneault, Gislain THE ELECTROCHEMICAL SOCIETY,
J2J 1Z1, Granby (CA) ELECTROCHEMICAL SOCIETY. MANCHESTER,
• Li, Jun NEW HAMPSHIRE, US, vol. 143, no. 3, March 1996
H4P 2B1, Montreal (CA) (1996-03), pages 1099-1103, XP000952656 ISSN:
0013-4651
EP 1 700 822 B1

Note: Within nine months of the publication of the mention of the grant of the European patent in the European Patent
Bulletin, any person may give notice to the European Patent Office of opposition to that patent, in accordance with the
Implementing Regulations. Notice of opposition shall not be deemed to have been filed until the opposition fee has been
paid. (Art. 99(1) European Patent Convention).

Printed by Jouve, 75001 PARIS (FR)

 EP 1 700 822 B1

Description

FIELD OF THE INVENTION

5 [0001] This invention relates to a method of manufacturing of Micro-Electro-Mechanical-Systems (MEMS) such as

micro-gyroscopes, micro-accelerometers, resonant accelerometers, micro-mirrors, micro-motors, micro-actuators and
other such micro-devices.

BACKGROUND OF THE INVENTION

10
[0002] In the manufacture of MEMs device, the integration of very sensitive moving mechanical parts causes a very
serious challenge because:

o These very sensitive mechanical parts are typically made of silicon (polysilicon or silicon-germanium);
15
o The sacrificial material underlying these mechanical parts to be released is typically silicon oxide;

o The etch-stop layer underlying this silicon oxide sacrificial layer is typically silicon nitride or silicon (polysilicon or
silicon-germanium);
20
o The mechanical release of the mechanical parts requires the removal of the sacrificial material in liquid HF-based
chemistries;

o The surface tension of these liquid HF-based chemistries is high enough to cause stiction of the released mechanical
25 parts onto the underlayers of silicon nitride;

[0003] Liquid HF chemistries are not suitable for stiction-free releases of sensitive MEMS devices. Vapor HF has been
used to release such devices without stiction. Unfortunately, vapor HF also attacks the underlying silicon nitride, producing
an undesirable fluorinated silicon nitride compound with a rough surface. Fortunately, it has been reported that this
30 fluorinated compound can be evaporated at high temperature using atmospheric pressure ovens operated under a
nitrogen or inert ambient and/or at high temperature using vacuum ovens operated under a vacuum as to leave a clean
surface under the removed sacrificial layer. Unfortunately, the fluorinated compound present onto the MEMS devices
prior to such an ex-situ evaporation is indeed toxic and its manipulation involves the exposure of operators to this toxic
fluorinated silicon nitride compound and/or to toxic vapors of this fluorinated silicon nitride compound resulting from its
35 evaporation. More, the fluorinated compound is indeed unstable in presence of moist air and result in non-evaporable
residues that cannot be evaporated in the ex-situ vacuum oven
[0004] The design of a custom anhydrous HF chamber capable of anhydrous HF release at a high enough temperature
and at a good enough vacuum can result in a residue-free release of the micro-devices integrating very sensitive moving
mechanical parts. Similarily, such a custom anhydrous HF chamber capable of anhydrous HF release at a high enough
40 temperature but at a vacuum level which is not yet low enough to prevent the formation of the toxic fluorinated silicon
nitride residues but which is indeed capable of an in-situ evaporation of the toxic fluorinated silicon nitride residues can
result in a safe operation and in a residue-free release of the micro-devices integrating very sensitive moving mechanical
parts.

45 Stiction issues with liquid buffered HF and non-buffered HF solutions

[0005] Liquid buffered HF and non-buffered HF solutions have been used to mechanically release the sacrificial oxides
underlying the silicon-based (polysilicon-based or silicon-germanium-based) structures, such as the ones shown in
Figure 1. The following references are cited as prior art covering liquid HF release processes:
50
o G. Matamis, B. Gogoib, D. Monkb, A. McNeilb, V. Burrows, "Release etch modeling analysis and the use of Laser
Scanning microscopy for etch time prediction of micromachined structures", Proc. of SPIE Vol. 4174, Micromachining
and Microfabrication Process Technology VI, ed. J. Karam, J. Yasaitis (Sep, 2000);

55 o K. R. Williams, R. S. Muller, "Etch Rates for Micromachining Processing", Journal of Microelectromechanical

Systems, Vol. 5, No. 4, December 1996, pp. 256-269;

o K. R. Williams, K. Gupta, M. Wasilik, "Etch Rates for Micromachining Processing - Part II", Journal of Microelec-

2
 EP 1 700 822 B1

tromechanical Systems, Vol. 12, No. 6, December 2003, pp. 761-778;

o J. Buhlery, F. P. Steiner, H. Baltes "Silicon Dioxide Sacrificial Layer Etching in Surface Micromachining", J. Mi-
cromech. Microeng. 7 (1997) R1-R13;
5
[0006] The above references show that HF solutions buffered with 40wt% ammonium fluoride, NH4F, can be used to
remove the sacrificial layer of silicon dioxide, Si02, because the ammonium fluoride buffer maintains a stable pH and a
stable release rate over time. Since ammonium fluoride has a melting point of 993°C and a boiling point of 1700°C it is
then solid at room temperature. Since ammonium fluoride has a solubility limit of 40 grams/liter of water @ 15°C, it is
10 typically used as a water-based ammonium fluoride solution, NH4F(aq.), at a concentration of 40wt%NH4F in water.
Since a 40wt%NH4F has a pH of 6.0 and boiling point of 106°C, it is then liquid at room temperature. These buffered
liquid HF solutions remove the sacrificial layer of silicon oxide, SiO2, by producing the ammonium fluorosilicate,
(NH4)2SiF6, and more water solvent to dissolve the ammonium fluorosilicate by-product:

15 Si02 (s) + 4HF (aq.) + 2NH4F (aq.) → (NH4)2SiF6 (aq.) + 2H2O (I)

[0007] The ammonium fluorosilicate (also called ammonium silicofluoride, ammonium fluosilicate, ammonium hex-
afluorosilicate or bararite) is a solid white cubic (2.011g/cm3) or triclinic (2.152g/cm3) crystal at room temperature. It has
a high solubility of 250 grams/liter in water @ 20°C:
20
(NH4)2SiF6 (aq.) ↔ 2NH4+ (aq.) + SiF6-2 (aq.)

[0008] This means that improperly rinsed BHF released wafers will result in an undesirable precipitation of solid
ammonium fluorosilicate, (NH4)2SiF6, crystals under the released mechanical parts. This clearly undesirable effect
25 related to the use of BHF solutions is to be prevented in the manufacturing of MEMS devices.
[0009] The ammonium fluorosilicate decomposes at 100°C and results in the formation of volatile ammonia, NH3, of
volatile silicon tetrafluoride, SiF4, and of another undesirable white solid by-product, ammonium bifluoride, NH4HF2:

(NH4)2SiF6 (aq.) → NH4HF2 (aq.) + SiF4 (g) +NH3 (g)

30
[0010] Fortunately, ammonium bifluoride (also called ammonium hydrogendifluoride) has a solubility of 630 grams/
liter in water @ 20°C:

NH4HF2 (aq.) ↔ NH4+ (aq.) + HF2- (aq.)

35
[0011] Ammonium bifluoride has a melting point of 125°C and a decomposition temperature of 238°C:

NH4HF2 (aq.) → NH4F (aq.) + HF (aq.)

40 [0012] Because ammonium fluoride, NH4F, has a melting point of 993°C, improperly rinsed mechanical parts released
with BHF solutions and heated to high temperatures will also result in undesirable refractory solid residues accumulating
under the improperly rinsed mechanical parts. Because advanced MEMS devices incorporating deep cavities and narrow
access openings that cannot easily be rinsed, the use of BHF solutions in the manufacturing of such advanced MEMS
devices gets much more complicated than the use of non-buffered HF solutions which do NOT result in the formation
45 of such solid by-products.
[0013] The cited references also show that the non-buffered 49wt%HF (in water) solution is used to remove the
sacrificial layer of silicon oxide, SiO 2. This 49wt%HF non-buffered solution (without NH4F) has a boiling point of 106°C
and is then liquid at room temperature. The 49wt%HF liquid solution removes the sacrificial layer of silicon oxide by
producing the fluorosilicic acid, H2SiF6, and more water solvent to dissolve the fluorosilicic acid by-product:
50
SiO2 (s) + 6HF (aq.) → H2SiF6 (aq.) + 2H2O (I)

[0014] Since the fluorosilicic acid (also called hexafluorosilicic acid, hydrogen hexafluorosilicate, hydrofluorosilicic
acid, dihydrogen hexafluorosilicate, hexafluorosilicate (2-) dihydrogen, hydrofluorosilicic acid, hydrogen hexafluorosili-
55 cate, hydrogen hexafluorosilic acid, sand acid, silicate (2-) hexafluorodihydrogen, silicic acid, silicofluoric acid, silicoflu-
oride or silicon hexafluoride dihydride) has a melting point of -15.5°C and a boiling point of 105°C, it is then liquid at
room temperature. The fluorosilicic acid, H2SiF6, is very soluble in water:

3
 EP 1 700 822 B1

H2SiF6 (aq.) ↔ 2H+ (aq.) + SiF6-2 (aq.)

[0015] Figure 2 shows the chemical structure of the formed fluorosilicic acid liquid by-products in the solution.
[0016] As shown in Figure 3, non-buffered liquid 49wt%HF solution can very efficiently release rigid mechanical
5 structures without any solid residues. In this Figure 3, a machined device has been released by the removal of the local
underlying oxide layer.
[0017] Unfortunately, the surface tension of liquid 49wt%HF solution causes a very undesirable stiction effect on more
flexible and more fragile mechanical parts than such rigid silicon blocks. Figure 4 shows various 3D interferometric
images of such an undesirable stiction effect on long and fragile cantilevers. Since advanced MEMS devices incorporate
10 many such fragile mechanical parts prone to stiction it is necessary to eliminate this undesirable effect related to the
use of liquid HF solutions.

The physics of the undesirable stiction effect observed with liquid HF solutions

15 [0018] Figure 5 shows the shape of a liquid droplet deposited onto the surface of a given solid. From a thermodynamic
standpoint, the work of adhesion of the interface is the amount of energy required to create free surfaces from the bonded
materials:

20

where γLA and γSA are the specific surface energies of the liquid and the solid in ambient air respectively and where γLS
is the interfacial energy between the solid and the liquid. The work of adhesion is often determined by contact angle
25 measurements using a goniometer. If the tested liquid droplet is in thermodynamic equilibrium with the solid, then:

30
where Θ is the contact angle between the liquid droplet and the solid surface. The work of adhesion now can be expressed
with the Young-Dupré equation:

35

[0019] The work of adhesion depends on the liquid surface tension (γLA) and the contact angle (Θ). The following two
cited references:
40
o C. H. Mastrangelo, "Mechanical Stability and Adhesion of Microstructures Under Capillary Forces - Part I: Basic
Theory", Journal of Microelectromechanical Systems, Vol. 2, No. 1, March 1993, pp. 33-43;

o C. H. Mastrangelo, "Mechanical Stability and Adhesion of Microstructures Under Capillary Forces - Part II: Exper-
45 iments", Journal of Microelectromechanical Systems, Vol. 2, No. 1, March 1993, pp. 44-55;

show that a cantilever beam shorter than a certain characteristic length called the detachment length, Ld, is stiff enough
to free itself completely from the underlying material. In contrast, a cantilever beam longer than this detachment length,
Ld, will not be stiff enough and will be pulled-down by the force generated by the surface tension of the liquid used for
50 its mechanical release and will be stuck to the underlying material after the evaporation of this liquid. Using the nomen-
clature presented in Figure 4, the following equation describes the relationship between the detachment length, the
cantilever dimensions (t=thickness, 1=length, w=width, h=height of sacrificial material), the cantilever’s material prop-
erties (E=Young modulus), the liquid surface tension (γLA) and the measured contact angle (Θ):

55

4
 EP 1 700 822 B1

i.e. the detachment length, Ld, increases linearly as function of the cantilever’s design characteristics [h2t3/(1 + t/w)]1/4
with a slope [2E/(9γLA cosΘ)]1/4 dictated by the Young modulus of the cantilever, the liquid surface tension (γLA) and the
measured contact angle (Θ). It is then predicted that the detachment length (Ld) of a cantilever (t, I, w) made of a material
of a Young Modulus, E, mechanically released over a sacrificial layer (h) will be shorter when mechanically released by
5 a liquid having a larger surface tension (γLA) and larger contact angle (Θ).
[0020] The 3D interfometric image of Figure 4 shows a very clear demonstration of the relatively short detachment
length (Ld) of cantilevers released in a non-buffered 49wt%HF solution.
[0021] The chemicals used to remove the sacrificial oxide layer over the underlying surface of silicon, silicon nitride
or other non-removed layer dictate the behaviour of the various exposed surfaces in liquid water i.e. dictates if these
10 become hydrophilic or hydrophobic surfaces.
[0022] Figure 6 is a reprint of the upper-cited C. H. Mastrangelo reference. It shows the linear relationship between
the measured detachment length, Ld, of cantilevers and the cantilever’s design characteristics [h2t3/(1 + t/w)]1/4 for
hydrophobic (water rinse after mechanical release in HF solutions) and hydrophilic (water rinse after sulphuric acid &
hydrogen peroxide exposure after mechanical release in HF solutions) cantilevers. This Figure 6 shows that there is
15 basically very little difference between measured detachment length, Ld, of hydrophilic and hydrophobic cantilevers.
[0023] When the mechanical release of the mechanical parts is done in a non-buffered 49wt%HF solution, a final rinse
in de-ionized water is performed to stop the release and to eliminate the residual H+ and F- ions from the exposed
surfaces. The following reference:

20 o D. R. Ride, "Handbook of Chemistry and Physics", 71th Edition, 1991, CRC Press, Boca Raton, Florida, USA;

shows that de-ionized water has a surface tension of 73.05 mN/m at a temperature of 20°C. The high surface tension
is limitative to achieve the long detachment length, Ld, required for fragile mechanical parts composing advanced MEMS
devices. Other chemicals than de-ionized water having lower surface tension, γLA, should be used to achieve better
25 resistance to stiction (i.e. lower work of adhesion, WA, and longer detachment length, Ld).

Stiction reduction using lower surface tension liquids

[0024] Lower surface tension liquids have been used to try minimizing the stiction effect. The following reference:
30
o O. Raccurt, F. Tardif, F. Arnaud d’Avitaya, T. Vareine, "Influence of liquid surface tension on stiction of SOI MEMS",
Journal of Micromechanics and Microengineering, Vol. 14, (2004) 1083-1090

is used as prior art reference to demonstrate that lower surface tension liquids slightly help minimizing the undesirable
35 stiction effect. It compares the detachment length, Ld, of various silicon cantilevers released from their underlying oxide
using either:

o De-ionized water, having a high surface tension, γLA, of 73.1 x 10-3 N/m;
o Isopropyl alcohol, having a mid surface tension, γLA, of 21.7 x 10-3 N/m;
40 o Pentane, having a very low surface tension, γLA, of 13.7 x 10-3 N/m;

[0025] In order to verify the effect of the surface tension , γLA, on the detachment length, Ld:

45

four types of SOI substrates have been used to machine cantilevers of various length:

50 o SOI substrate #1: top silicon thickness, t, of 20.0 Pm over 0.5Pm sacrificial oxide, h;

o SOI substrate #2: top silicon thickness, t, of 15.0 Pm over 2.0Pm sacrificial oxide, h;

o SOI substrate #3: top silicon thickness, t, of 20.0 Pm over 2.0Pm sacrificial oxide, h;
55
o SOI substrate #4: top silicon thickness, t, of 20.0 Pm over 3.0Pm sacrificial oxide, h;

[0026] This reference shows that the various cantilevers are machined in the top silicon region (Young modulus of

5
 EP 1 700 822 B1

170GPa) as to reach the bottom sacrificial oxide. Following proper resist strip, the cantilevers are released from their
underlying oxide using a non-buffered 49wt%HF solution followed by a rapid displacement of the 49wt%HF releasing
solution using either:

5 o De-ionized water;

o Isopropyl alcohol;

o Pentane;
10
[0027] Figure 7 is a reprint of the upper cited O. Raccurt reference. This Figure 7 shows the set-up used by this cited
reference to ensure this rapid replacement of the non-buffered 49wt%HF solution by de-ionized water and then the
replacement of this de-ionized water by either one of:

15 o De-ionized water;

o Isopropyl alcohol;

o Pentane.
20
[0028] This Figure 7 shows that the steps a) to h) of releasing, rinsing and drying the various cantilevers machined in
the four types of SOI wafers are performed in the same bath without liquid/gas interface:

o a) & b) Releasing of the cantilevers by etching the sacrificial layer in 49wt% HF;
25
o c) Stop etching the sacrificial oxide using a "piston" flow of de-ionized water removing the 49wt%HF by overflow;

o d) Rinsing using recirculation;

30 o e) Rinse using a "piston" flow of de-ionized water removing the recirculated de-ionized water by overflow;

o f) Introduction of either isopropyl alcohol or pentane onto the de-ionized water;

o g) SOI wafer drying by displacement through the layer of either isopropyl alcohol or pentane;
35
o h) Recovery of the drying liquid by overflow.

[0029] Figure 8 is also reprint of the cited O. Raccurt reference. This Figure 8 shows the observed effect of the surface
tension of the drying liquid on the detachment length, Ld, of the various cantilevers machined in the four types of SOI
40 substrates. It appears that there is not that much differences between the detachment length, Ld, and the surface tension
of the drying liquid for three out of four types of SOI substrates. For the fourth type of SOI substrate, there is an increase
of the detachment length, Ld, using lower surface tension pentane as replacement of de-ionized water.
[0030] Such small differences of detachment length, Ld, of sensitive mechanical parts using smaller surface tension
drying liquids do not fulfill the requirements for most advanced MEMS devices integrating a large number of sensitive
45 mechanical parts and does not safely prevent the stiction issues associated with such type of devices.
[0031] Another technique is to be used to prevent stiction of such advanced MEMS devices.

Stiction reduction using super-critical CO2 drying

50 [0032] Super-critical CO2 drying has been used to try minimizing the stiction effect. The following references:

o J. J. Sniegowski, C. Smith, "An Application of Mechanical Leverage to Microactuation", 8th International Conference
on Solid-State Sensors and Actuators, and Eurosensors IX, Proc., Transdiucers ’95 Eurosensors IX, Stockholm,
Sweden, Vol. 2, June 25-29, 1995, pp. 364-367;
55
o J. W. Judy, R. S. Muller, "Batch-Fabricated, Addressable, Magnetically Actuated Microstructures", Technical
Digest, Solid-State Sensor and Actuator Workshop, Hilton Head Island, SC, June 3-6, 1996;

6
 EP 1 700 822 B1

o C. W. Dyck, J. H. Smith, S. L. Miller, E. M. Russick, C. L. J. Adkins, "Supercritical carbon dioxide solvent extraction
from surface-micromachined micromechanical structures", SPIE Micromachining and Microfabrication, Oct. 1996;

o C. H. Mastrangelo, "Adhesion-related failure mechanisms in micromechanical device" Tribology Letters, Vol. 3,

5 No. 3, June 1997, pp. 223-238;

o C.J. Kim, J. Y. Kim, B. Sridharan, "Comparative Evaluation of Drying Techniques for Surface Micromachining",
Sensors and Actuators, A 64, 1998, pp. 17-26;

10 o L. Lin, R. T. Howe, A. P. Pisano, "Microelectromechanical Filters for Signal Processing", Journal of Micromechanical
Systems, Vol. 7, No. 3, September 1998, pp. 286-294;

o J. Zou, C. Liu, J. Chen, S. M. Kang, "Development of a Wide Tuning Range MEMS Tunable Capacitor for Wireless
Communication Systems," IEEE IEDM, 2000, pp. 403-406;
15
o L. Lin, "MEMS Post-Packaging by Localized Heating and Bonding", IEEE Transactions on Advanced Packaging,
Vol. 23, No. 4, November 2000, pp. 608-616;

o N. Hoivik, Y. C. Lee, V. M. Bright, "Flip Chip Variable High-Q MEMS Capacitor for RF Applications, Proceedings
20 of IPACK’01, The Pacific RIM/ASME International Electronic Packaging Technical Conference and Exhibition, Kauai,
Hawaii, USA, July 8-13, 2001;

o W. I. Jang, C. A. Choi, M. L. Lee, C. H. Jun, Y. T. Kim, "Fabrication of MEMS devices by using anhydrous HF
gas-phase etching with alcoholic vapor", Journal of Micromechanics and Microengineering, Vol. 12, 2002, pp.
25 297-306; are used as cited prior art to demonstrate that the supercritical CO2 drying helps minimizing the undesirable
stiction effect. The supercritical drying technique uses CO2 as the supercritical fluid because of its relatively low
supercritical pressure 7.4 x 106 Pa (1073 psi) and temperature (31.1 °C). The steps involved in the supercritical
CO2 drying of released micro-structures are:

30 o Release by immersion in liquid HF solutions;

o Surface passivation of the released silicon structure by immersion in a sulfuric peroxide or in a hydrogen peroxide
solution, thus resulting in hydrophilic silicon surfaces;

35 o Thorough de-ionized water rinses followed by a solvent or a alcohol soak to displace the water;

o Placement of the solvent- or alcohol-soaked samples in a supercritical drying chamber for drying. Once in the
pressure vessel, the solvent or alcohol is completely displaced by liquid CO2 at a pressure of about 8.2 x 106 Pa
(1200 psi), then at a pressure higher than the supercritical pressure of 7.4 x 106 Pa (1073 psi).
40
o Figure 9 shows the mechanism behind the super-critical CO2 drying. Drying takes place by passing from the liquid
phase to the gas phase through the supercritical region and above the supercritical point (31.1°C, 7.4 x 106 Pa
(1073 psi)):

45 o First, the CO2-pressurized vessel is heated until the liquid CO2 makes the transition to the supercritical phase (T
> 31.3°C);

o Venting the vessel to rapidly reduce the pressure isothermally above the CO2 supercritical temperature results in
dried "stiction-free" surfaces.
50
[0033] Because the liquid-to-vapor transition occurs in the supercritical region, there are no attractive capillary forces
to cause stiction during the drying phase.
[0034] This supercritical CO2 drying technique is not that well suited for mass production because the high pressure
of about 8.2 x 106 Pa (1200psi) (required to dry the released structures by passing from the liquid phase to the gas
55 phase through the supercritical region and above the supercritical point of 31.1°C and 7.4 x 106 Pa (1073 psi)) imposes
the use of bulky and thick walls mechanical chambers to manually load and dry, one-by-one, the solvent-soaking sub-
strates integrating advanced MEMS devices having their sensitive mechanical parts already released and yet dripping
solvent. The most advanced supercritical CO2 dryer currently available is the "Automegasamdri®-915 Series C" from

7
 EP 1 700 822 B1

Tousamis:

o http://tousimis.com/Specs/8785D.pdf

5 [0035] Figure 10 shows the picture of this system and clearly demonstrates the automation and mass production
limitations of this supercritical CO2 drying technique which imposes the manually loading, one-by-one, of yet solvent-
soaking substrates.

Incompatibility of standard CMOS metals to liquid HF

10
[0036] The above-mentioned release techniques involving liquid HF suffer from either stiction complications or lack
of automation, thus limiting the mass production of advanced MEMS devices integrating sensitive mechanical parts.
[0037] Over these very serious problems, liquid-based HF solutions also suffer from metal incompatibility issues.
These incompatibility issues are due to the fact that advanced MEMS devices typically integrate digital and/or analog
15 CMOS control logic and/or high voltage CMOS drivers capable of performing actuation functions. Since this CMOS
electronics needs to be exposed to the chemicals used for the removal of the oxide sacrificial material to allow the release
the mechanical parts of these advanced MEMS devices, the liquid-based HF solutions should not chemically attack the
metal-based interconnections of this CMOS electronics. Unfortunately almost all CMOS interconnect materials, namely
aluminum alloys (such as aluminum-silicon, aluminum-copper or aluminum-silicon-copper alloys), titanium (and titanium
20 compounds such as titanium nitride) and copper are rapidly attacked by these liquid-based HF solutions. The following
documents are used as prior art references to demonstrate these undesirable limitations:

o K. R. Williams, R. S. Muller, "Etch Rate for Micromachining Processing", Journal of Micromechanical Systems,
Vol. 5, No. 4, December 1996, pp. 256-294;
25
o A. Witvrouw, B. Du Bois, P. De Moor, A. Verbist, C. Van Hoof, H. Bender, K. Baert, "A comparison between wet
HF etching and vapor HF etching for sacrificial oxide removal", Proc. SPIE Micromachining and Microfabrication
Process Technology VI; Sept. 2000, Vol. 4174, 2000, pp. 130-141;

30 o K. R. Williams, K. Gupta, "Etch Rate for Micromachining Processing - Part II", Journal of Micromechanical Systems,
Vol. 12, No. 6, December 2003, pp. 761-778;

[0038] This clearly limits the use of liquid-based HF solutions for the mass production of advanced MEMS devices
integrating digital and/or analog CMOS control logic and/or high voltage CMOS drivers capable of performing actuation
35 functions.
[0039] C. S. Lee, J. T. Baek, H. J. Yoo, S. E. Woo, "Modeling and Characterization of Gas-Phase Etching of Thermal
Oxide and TEOS Oxide Using Anhydrous HF and CH3OH", J. Electrochem Soc., Vol. 143, No. 3, March 1996. pp.
1099-1103 disclose a release process wherein anhydrous HF release is performed at a pressure of less than the
ammonium bifluoride, NH4HF2, triple point pressure of about 5,333 Pa (40Torr) and at the temperature of the highlighted
40 grey zone of Figure 24 could result in a residue-free removal of the oxide sacrificial layer and in a residue-free attack of
the underlying silicon nitride etch-stop layer.

Si02(s) + 4HF(g) → SiF4(g)↑ + 2H2O(g)↑ Si3N4(s) + 16 HF(g) → SiF4(g)↑ + 2SiF4(g)↑ +2NH3(g)↑ +

2NH4HF2(g)↑
45
[0040] Such release conditions of the sacrificial oxide results in a logarithmic reduction of the surface coverage of
anhydrous HF raw material onto the surface of sacrificial oxide to be released.
[0041] WO-A-03/055791 discloses a two-part process for etching microstructures, wherein the first step employs a
mixture of HF and H2O, and in the second step a solvent is used to replace the moisture in the first step and dissolve
50 the residue.

SUMMARY OF THE INVENTION

[0042] Embodiments of the invention provide an integrated process involving the use of anhydrous HF and either a
55 methanol, isopropanol, acetone, 1-buthanol or 2-buthanol additive to release MEMS devices at a temperature of less
than 100°C and at a pressure greater than the ammonium bifluoride, NH4HF2, triple point pressure of about 5,333 Pa
(40 Torr) followed by an in-situ vacuum evaporation at a temperature of more than 100°C and at vacuum level lower
than the ammonium bifluoride, NH4HF2, triple point pressure of about 5,333 Pa (40 Torr) as a way to achieve an operator-

8
 EP 1 700 822 B1

safe, residue-free and stiction-free release of MEMS micro-devices integrating very sensitive moving mechanical parts,
digital and/or analog CMOS control logic and/or high voltage CMOS drivers capable of performing actuation functions.
[0043] According to one aspect of the invention there is provided a method of releasing a sacrificial oxide layer covering
an etch-stop silicon nitride underlayer, comprising etching away the sacrificial oxide by exposure to anhydrous HF at a
5 temperature of less than 100°C and/or a pressure greater than 5,333 Pa until the etch stop layer is reached; and
subsequently performing without exposure to ambient air, and at a selected pressure less than 5,333 Pa and at a selected
temperature greater than the highest of 100°C or the sublimation temperature of ammonium bifluoride at the selected
pressure, an in-situ vacuum evaporation of ammonium fluorosilicate and ammonium bifluoride etch by-products resulting
from exposure of the silicon nitride to anhydrous HF.
10 [0044] The invention offers an improvement over the vapor HF presently used to protect against stiction complications.
[0045] Since the mechanical deformation and resulting stiction of sensitive microstructures are caused by the pulling
action (surface tension) of the liquids as they are dried from the surfaces of these microstructures, an alternate approach
using vapor HF (gas phase H2O/HF solutions) was proposed in the Prior Art. The following eight documents are cited
as prior art references for the stiction-free release of advanced MEMS devices integrating sensitive mechanical parts
15 prone to stiction:

o R.S. Blackwood, R. L. Biggerstaff, L. D. Clements, R. Cleavelin, "Gaseous Process and Apparatus for Removing
Films from Substrates", USA Patent 4,749,440, June 7, 1988;

20 o M. Tanaka, "Surface Treating Apparatus and Method Using Vapor", USA Patent 5,174,855, December 29, 1992;

o H. Watanabe, H. Kitajima, I. Honma, H. Ono, R. J. Wilhelm, A. J. L. Sophie, "Influence of Water Adsorption/

Desorption Processes on the Selectivity of Vapor HF Processes", J. Electrochem Soc., Vol. 142, No. 4, April 1995,
pp. 1332-1340;
25
o B. Du Bois, G. Vereecke, A. Wltvrouw, P. De Moor, C. Van Hoof, A. De Caussemaeker, A. Verbist, "HF Etching
of Si-oxides and Si-nitrides for Surface Micromachining", IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, IST Project
SUMICAP (IST-1999-10620);

30 o A. Witvrouw, B. Du Bois, P. De Moor, A. Verbist, C. Van Hoof, H. Bender, K. Baert, "A comparison between wet
HF etching and vapor HF etching for sacrificial oxide removal", Proc. SPIE Micromachining and Microfabrication
Process Technology VI; Sept. 2000, Vol. 4174, 2000, pp. 130-141;

o R. C. Cole, R. E. Robertson, A. D. Yarbrough M. Tanaka, "Method of Vapor HF Release of Microstructures", USA

35 Patent 6,238,580, May 29, 2001;

o M. A. Lester, "Selective Material Removal for Nanostructure Formation", Semiconductor International, June 1, 2003;

[0046] These eight references and in particular A. Witvrouw"s and M. A. Lester’s references show that the metal
40 incompatibility is still a problem with the vapor HF process (mostly performed using FSI International"s Excalibur® 2000
Vapor HF Etching System of Figure 11- http://www.fsa.org/directories/suppliers/profile.asp?id=617): the reported ex-
periments show that although vapor HF process conditions can be adjusted to achieve selective removal of oxide
sacrificial layers films without stiction and collapse of polysilicon structures, the aluminum, titanium and copper layers
are indeed seriously attacked during the removal of the sacrificial oxide layers using non-anhydrous vapor HF.
45 [0047] This incompatibility of the vapor HF process and the typical CMOS interconnects metals again clearly limits
the use of vapor HF solutions for the mass production of advanced MEMS devices integrating digital and/or analog
CMOS control logic and/or high voltage CMOS drivers capable of performing actuation functions.
[0048] The invention is an improvement over the anhydrous HF mixed with solvent or alcohol additives presently used
to protect against stiction and CMOS metal interconnects attack complications
50 [0049] The removal of a solid phase sacrificial oxide layer, SiO2(s), using a gas phase anhydrous vapor hydrofluoric
acid, HF(g), produces a gas phase silicon tetrafluoride, SiF4(g)↑, and gas phase water vapor, H2O(g)↑:

SiO2(s) + 4HF(g)→ SiF4(g)↑ + 2H2O(g)↑

55 [0050] Silicon tetrafluoride, SiF4, also called silicon (IV) fluoride or silicon fluoride or tetrafluorosilane has a melting
point of -90°C and a boiling point of -86°C. It is then a gas at room temperature. The water vapor reaction by-product
needs to be eliminated from the surrounding of the sacrificial layer as to prevent the undesirable metal incompatibility
effects described in the previous section. The elimination of the water vapor by-product is possible via the use of a

9
 EP 1 700 822 B1

solvent (or alcohol) additive that offers a way to prevent the condensation of the water vapor by-product of the upper
chemical reaction onto the released mechanical surfaces and the surrounding surfaces i.e. a way to prevent against the
initial stage of a possible stiction complication:

5 o J. Ruzyllo, K. Torek, C. Draffon, R. Grant, R. Novak, "Etching of Thermal Oxides in Low Pressure Anhydrous
HF/CH3OH Gas Mixtures at Elevated Temperatures", J. Electrochem Soc., Vol. 140, No. 4, April 1993, pp. L64-L66;

o K. Torek, J. Ruzyllo, R. Grant, R. Novak, "Reduced Pressure Etching of Thermal Oxides in Anhydrous HF/Alcoholic
Gas Mixtures", J. Electrochem Soc., Vol. 142, No. 4, April 1995, pp. 1322-1326;
10
o R. W. Grant, J. Ruzyllo, K. Torek, "Controlled Etching of Oxides via Gas Phase reactions", USA Patent 5,439,553,
August 8, 1995;

o C. S. Lee, J. T. Baek, H. J. Yoo, S. E. Woo, "Modeling and Characterization of Gas-Phase Etching of Thermal
15 Oxide and TEOS Oxide Using Anhydrous HF and CH3OH", J. Electrochem Soc., Vol. 143, No. 3, March 1996. pp.
1099-1103;

o H. H. Chung, W. I. Jang, C. S. Lee, J. H. Lee, H. J. Yoo, " Gas-phase Etching of TEOS and PSG Sacricial Layers
using Anhydrous HF and CH3OH", Journal of the Korean Physical Society, Vol. 30, No. 3, June 1997, pp. 628-631;
20
o J. H. Lee, W. I. Jang, C. S. Lee, Y. I. Lee, C. A. Choi, J. T. Baek, H. J. Yoo, "Characterization of Anhydrous HF
Gas-Phase Etching with CH3OH for Sacrificial Oxide Removal", Sensors and Actuators, A64, 1998, pp. 27-32;

o A. J. Muscat, A. G. Thorsness, G. Montano-Miranda, "Characterization of Residues Formed by Anhydrous Hy-

25 drogen Fluoride Etching of Doped Oxides", J. Vac. Sci. Technol. A19(4), Jul-Aug 2001, pp. 1854-1861;

o W. I. Jang, C. A. Choi, M. L. Lee, C. H. Jun, Y. T. Kim, "Fabrication of MEMS Devices by Using Anhydrous HF
Gas-phase Etching With Alcoholic Vapor", Journal of Micromechanics and Microengineering, 12, 2002, pp. 297-306;

30 o K. Shimaoka, J. Sakata, "A New Full-Dry Processing Method for MEMS", R&D Review of Toyota CRDL Vol. 37
No. 3, September 2002, pp. 59-66;

[0051] The resulting is a good gas phase release process free from stiction complications.

35 BRIEF DESCRIPTION OF THE DRAWINGS

[0052] The invention will now be described in more detail, by way of example only, with reference to the accompanying
drawings, in which:-

40 Figure 1 shows the release of a mechanical structure via the removal of the sacrificial layer;

Figure 2 shows fluorosilicic acid;

Figure 3 shows the release of mechanical structure following liquid HF removal of underlying sacrificial oxide layer;
45
Figure 4 shows the undesirable stiction effect observed during the mechanical release of long and fragile cantilevers;

Figure 5 shows the shape of a droplet liquid deposited onto the surface of a given solid;

50 Figure 6 shows the linear relationship between the detachment length, Ld, and the design characteristics, [h2t3/(1
+ t/w)]1/4, of hydrophobic and hydrophilic cantilevers (Reprint of C. H. Mastrangelo’s);

Figure 7 shows the set-up used by O. Raccurt to ensure a rapid replacement of the non-buffered 49wt%HF solution
by de-ionized water and then the replacement of this de-ionized water by either: de-ionized water; isopropyl alcohol
55 or pentane;

Figure 8 shows the effect of the surface tension of the drying liquid on the detachment length, Ld, of various cantilevers
(Reprint of O. Raccurt’s);

10
 EP 1 700 822 B1

Figure 9 shows the super-critical CO2 drying mechanism;

Figure 10 shows the "Automegasamdri®-915B - Series C" from Tousamis;

5 Figure 11 shows the Excalibur® 2000 Vapor HF Etching System from FSI International;

Figure 12 shows the various mechanical structures properly released without any stiction using a anhydrous HF
process;

10 Figure 13 shows the excellent infrared reflectance of a 0.075Pm thick top coating of aluminum alloy which obviously
remained intact following the removal of 100Pm of sacrificial oxide under the 2.5Pm thick silicon structural layer
using an extended anhydrous HF exposure;

Figure 14 illustrates the system used to perform anhydrous HF & solvent (or alcohol) additive release process of
15 sensitive mechanical microstructures without any stiction and with full compatibility to standard CMOS metal inter-
connects;

Figure 15 shows ammonium fluorosilicate, (NH4)2SiF6, as result of the attack of the silicon nitride etch-stop layer
by anhydrous HF;
20
Figure 16 shows the ammonium fluorosilicate, (NH4)2SiF6, toxic material (CAS No. 16919-19-0) formed from the
HF attack of silicon nitride;

Figure 17 shows the ammonium bifluoride, NH4HF2, toxic material (CAS No. 1341-49-7) formed from the thermal
25 decomposition of ammonium fluorosilicate, (NH4)2SiF6, the toxic material (CAS No. 16919-19-0) formed from the
HF attack of silicon nitride;

Figure 18 shows top view of optical pictures of a MEMS device following its mechanical release using a anhydrous
HF process, before and after a few minutes evaporation to an oven under a nitrogen ambient at a temperature of
30 more than 240°C at atmospheric pressure;

Figure 19 shows a top view optical picture and white light 3D interferometry nanoimaging of the region of the silicon
nitride of a MEMS device which had its mechanical structure released by a anhydrous HF process following the
evaporation of the ammonium fluorosilicate crystals. The very smooth surface shows a residual RMS (Rq) surface
35 roughness of only 1.47nm;

Figure 20 shows the chemical analysis confirming the chemical absorption of water vapor by the hygroscopic
ammonium fluorosilicate crystals in the region of the silicon nitride of a MEMS device which had its mechanical
structure released;
40
Figure 21 illustrates how ammonium cations in water solutions are very unstable and readily convert to ammonia
by a proton exchange from the ammonium cation to the hydroxyl anion;

Figure 22 shows the non-evaporated residues observed for air-exposed and ex-situ evaporated ammonium fluor-
45 osilicate crystals into an ex-situ oven operated at a temperature of more than 240°C under nitrogen ambient at
atmospheric pressure;

Figure 23 shows evidence of liquid droplets coalescencing following an anhydrous HF exposure of sacrificial oxide
located over a silicon nitride etch-stop underlayer;
50
Figure 24 is a re-sketch of the ammonium bifluoride, NH4HF2(s), phase diagram from data proposed by B. Du Bois
(IMEC, 1999);

Figure 25 shows the temperature dependency of HF, water and methanol vapor pressure;
55
Figure 26 shows the the surface ratio, ν/νm, of the surface coverage of anhydrous HF adsorbed onto an oxide
sacrificial layer, ν to the maximum coverage to form a complete monolayer, νm, at 25°C and 75°C (C. S. Lee, 1996);
and

11
 EP 1 700 822 B1

Figure 27 shows the unacceptable reduction of release rate associated with an anhydrous HF process operating at
a pressure less than the ammonium bifluoride, NH4HF2, triple point pressure of about 40Torr and at the temperature
of more than 100°C (Torek, 1995).

5 DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0053] Figure 12 shows various mechanical structures properly released without any stiction using anhydrous HF &
solvent (or alcohol) additive process of the upper mentioned USA Patent 5,439,553. The desirable advantage of this
anhydrous HF & solvent (or alcohol) additive process over the standard anhydrous HF process resides in the metal
10 compatibility with standard CMOS interconnect materials (aluminum and aluminum alloys, titanium and titanium com-
pounds as well as copper).
[0054] The inventors have clearly demonstrated the CMOS metal compatibility of the anhydrous HF & solvent (or
alcohol) additive process of the above mentioned USA Patent 5,439,553 by releasing 800Pm diameter photonics mirrors
composed of a 2.5Pm thick doped silicon structure directly coated with a very thin layer (75nm) of an Al/1.0wt%Si/
15 0.5wt%Cu infrared mirror (as per our granted USA patent 6,656,528) and perforated with an array of release holes
spaced about 50Pm apart (thus ensuring complete mirror release when laterally removing 100Pm of the underlying
1.0Pm thick sacrificial oxide). Following an extended exposure to this anhydrous HF & solvent (or alcohol) additive
process which allowed the removal of 100Pm of sacrificial oxide, the 75nm thick top coating of aluminum alloy remained
untouched and perfectly intact and allowed the excellent infrared reflectance disclosed in Figure 13.
20 [0055] Figure 14 shows the type of system used to perform this anhydrous HF & solvent (or alcohol) additive release
process of sensitive mechanical microstructures without any stiction and with full compatibility to standard CMOS metal
interconnects.
[0056] The above chemical reaction involving anhydrous HF and the sacrificial oxide layer to be removed tends to
indicate that this anhydrous HF & solvent (or alcohol) additive release process might be ideal for the mechanical release
25 of advanced MEMS devices integrating sensitive mechanical parts prone to stiction as well as digital and/or analog
CMOS control logic and/or high voltage CMOS drivers capable of performing actuation functions.
[0057] Unfortunately, the silicon nitride dielectric layer which is typically used as an etch-stop layer underneath the
oxide to be removed as to limit the penetration of the anhydrous HF and as to prevent the attack of other oxide layers
underneath this silicon nitride etch-stop layer does not resist very well when exposed to this anhydrous HF & solvent
30 (or alcohol) additive release process since the exposure of this silicon nitride to anhydrous HF results in an undesirable
chemical attack:

Si3N4(s) + 16 HF(g) → 2(NH4)2SiF6(s) + SiF4(g)↑

35 [0058] Figure 15 shows the result of this chemical attack of the anhydrous HF on the silicon nitride etch-stop layer.
The chemical compound resulting from this chemical attack, ammonium fluorosilicate, (NH4)2SiF6, shown in Figure 16,
forms toxic crystals (CAS No. 16919-19-0):

o "MSDS of Ammonium Fluorosilicate", LCI,Ltd., P. O. Box 49000, Jacksonville Beach, FL 32240-9000, http:
40 //www.lciltd.com/msds%5Cmsdsasf.htm or http://www.flouridealert.com/pesticides/ammonium.fluosilicate.msds.
htm ;

[0059] Ammonium fluorosilicate is also known as: ammonium fluosilicate, ammonium hexafluorosilicate, ammonium
silicofluoride, bararite, cryptohalite, cryptophthalite, and diammonium hexafluorosilicate crystals. These toxic ammonium
45 fluorosilicate crystals have two crystalline phases: a cubic α phase with a 2.011g/cm3 density and a trigonal β phase
with a 2.152g/cm3 density. Since both crystalline phases are highly soluble in water (solubility of 250 grams/liter in water
@ 20°C) or alcohol, they could be removed by a water or alcohol rinse but such a liquid exposure would result in stiction.
Another elimination technique than a water rinse should be found to remove them without induced stiction. It is known
that ammonium fluorosilicate crystals are thermally unstable and experience a thermal decomposition at a temperature
50 of more than 100°C:

2(NH4)2SiF6(s) → 2NH4HF2(s) + 2SiF4(g)↑ +2NH3(g)↑

[0060] The chemical compound resulting from this thermal decomposition, ammonium bifluoride, NH4HF2, shown in
55 Figure 17, forms other toxic crystals (CAS No. 1341-49-7). Ammonium bifluoride is under serious control as chemical
weapon precursor:

o R. J. Mathews, "A Comparison of the Australia Group List of Chemical Weapon Precursors and the CWC Schedules

12
 EP 1 700 822 B1

of Chemicals", Chemical Weapons Convention Bulletin, Quarterly Journal of the Harvard Sussex Program on CBW
Armament and Arms Limitation, Issue No. 21, September 1993, pp. 1-3;

o "Handbook for Notification of Exports to Irak", SC Resolution (1051), Annex C, http://www.casi.org.uk/info/1051list/

5 annexc.html

o U.N. Resolution 1409, Adopted by the U.N. Security Council, May 2002, "Revised Annex II to the Special Com-
mission’s Plan", http://www.iraqwatch.org/controlled/revised-annex2.htm

10 [0061] These toxic ammonium bifluoride crystals are also known as: acid ammonium fluoride, ammonium acid fluoride,
ammoniumbifluoride, ammonium difluoride, ammonium fluoride, ammonium hydrofluoride, ammonium hydrogen biflu-
oride, ammonium hydrogen difluoride, ammonium hydrogen fluoride, ammonium monohydrogen difluoride, and flammon
crystals. Since these toxic ammonium fluorosilicate crystals are soluble in water or alcohol, they could be removed by
a water or alcohol rinse but such a liquid exposure would result in stiction. Another elimination technique than a water
15 rinse should be found to remove them without induced stiction. The following document shows that ammonium bifluoride
has a melting point of 124.6°C and a boiling point of 240°C at atmospheric pressure:

o "MSDS of Ammonium Bifluoride", Ampex Chemicals, S.A. de C.V., http://www.analytyka.com.mx/tab-

la%20periodica/MSDS/N/AMMONIUM%20BIFL UORIDE.htm;
20
[0062] The elimination of the toxic ammonium bifluoride crystals at a temperature exceeding 240°C at atmospheric
pressure is potentially an excellent technique that could ensure proper elimination of these crystals without the use of
any liquids and any stiction issues.
[0063] Figure 18 shows the top view optical pictures of a MEMS device released by removing the sacrificial oxide
25 using the upper-mentioned anhydrous HF & solvent (or alcohol) additive release process. The top picture is showing a
region located over the etch-stop silicon nitride following exposure to the anhydrous HF & solvent (or alcohol) additive
release process while the bottom picture also shows a region of the same device also located over the etch-stop silicon
nitride following exposure to the anhydrous HF & solvent (or alcohol) additive release process and following an exposure
to an oven under a nitrogen ambient at a temperature of more than 240°C at atmospheric pressure. These optical
30 photographs clearly show how efficient can be the evaporation of the ammonium fluorosilicate crystals using this ex-
situ evaporation in a nitrogen ambient at a temperature of more than 240°C at atmospheric pressure.
[0064] Figure 19 is a top view optical picture of the region of the silicon nitride of a MEMS device which had its
mechanical structure released by removing the sacrificial oxide using the upper-mentioned patented anhydrous HF &
solvent (or alcohol) additive release process and which had the ammonium fluorosilicate crystals evaporated using an
35 ex-situ evaporation in an oven under a nitrogen ambient at a temperature of more than 240°C at atmospheric pressure.
The top view optical picture points the region of silicon nitride that has been attacked by the upper-mentioned patented
anhydrous HF & solvent (or alcohol) additive release process and that has been cleared from its formed ammonium
fluorosilicate crystals following the ex-situ evaporation in an oven under a nitrogen ambient at a temperature of more
than 240°C at atmospheric pressure. The residual surface roughness of this same region is analyzed using white light
40 3D interferometry nanoimaging as to provide information about the residual topography following the evaporation of
these toxic ammonium fluorosilicate crystals, (NH4)2SiF6. The white light 3D interferometry nanoimaging clearly shows
a very impressive smooth surface with a residual RMS (Rq) surface roughness of only 1.47nm or about 7 atomic layers.
The ex-situ evaporation into an ex-situ oven operated at a temperature of more than 240°C under nitrogen ambient at
atmospheric pressure is then very effective in the elimination of these residual ammonium fluorosilicate crystals from
45 the surface. This evaporation technique has also been reported in the following document:

o B. Du Bois, G. Vereecke, A. Wltvrouw, P. De Moor, C. Van Hoof, A. De Caussemaeker, A. Verbist, "HF Etching
of Si-oxides and Si-nitrides for Surface Micromachining", IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, IST Project
SUMICAP (IST-1999-10620)
50
[0065] Unfortunately, the use of an ex-situ evaporation into an ex-situ oven operated at a temperature of more than
240°C under a nitrogen ambient at atmospheric pressure is a very serious hazard which causes very serious health and
safety concerns since the ex-situ thermal decomposition of the toxic ammonium fluorosilicate crystals, (NH4)2SiF6(s),
into toxic ammonium bifluoride crystals, NH4HF2(s), sublimating as a toxic ammonium bifluoride vapor, NH4HF2(g),
55 implies a direct exposure of operators to this toxic ammonium bifluoride vapor when they un-load the evaporated wafers
from the oven:

2(NH4)2SiF6(s) → 2NH4HF2(s) + 2SiF4(g)↑ +2NH3(g)↑

13
 EP 1 700 822 B1

2NH4HF2(s) → 2NH4HF2(g)↑

[0066] Moreover, the use of an ex-situ evaporation into an ex-situ oven in a typical production environment system-
5 atically results in a direct exposure of ammonium fluorosilicate to moisten ambient atmosphere (a modern semiconductor
fabrication facility is typically maintained at a fixed 40% relative humidity as to protect against electro-static discharges,
ESD) and in an uncontrolled delay between the first moments of direct exposure of ammonium fluorosilicate to moisten
ambient atmosphere and the ex-situ evaporation of ammonium fluorosilicate into the oven operated under a nitrogen
ambient at atmospheric pressure. It is known from the glass frosting industry that ammonium fluorosilicate crystals,
10 (NH4)2SiF6(s), are deliquescent salts which are so hygroscopic that they readily attract moisture from this direct exposure
to moisten ambient atmosphere and readily form liquid solutions:

o http://www.torlincn.com/Ammonium%20Bifluoride

15 o http://ktv-ok.com/ffnew/edoc5.htm

o http://www.hyperdictionary.com/dictionary/deliquescent

[0067] It has recently been observed that deliquescence of thin film salts is a nucleation phenomenon:
20
o http://www.phy.mtu.edu/colloquiums/cantrell2.html

o Cantrell, W., C. McCrory, G. Ewing, "Nucleated deliquescence of salt", J. Chem. Phys., 116, 2116-2120, 2002

25 [0068] This implies that the expected very uniform film of ammonium fluorosilicate resulting from the exposure of a
uniform film of silicon nitride to the upper-mentioned patented anhydrous HF & solvent (or alcohol) additive release
process will gradually result in the transformation of this expected uniform film of ammonium fluorosilicate into a surface
covered by series of isolated droplets of ammonium fluorosilicate solution following a direct exposure to moisten ambient
atmosphere. If this exposure is prolonged some of these isolated liquid droplets may coalesce and form larger liquid
30 droplets, thus resulting in a random size distribution of liquid droplets. These liquid droplets are indeed chemically active
liquid solutions that may result in modifications of their chemical content. As previously discussed in the upper section
2.1 "Stiction issues with liquid buffered HF and non-buffered HF solutions", the following physical and chemical reactions
result from the exposure of ammonium fluorosilicate to the adsorbed and absorbed water vapor in the non-uniform
liquefied droplets:
35
2(NH4)2SiF6(s) in moist ambient → 2(NH4)2SiF6(droplet)

2(NH4)2SiF6(droplet) ↔ 4NH4+(droplet) + 4OH-(droplet) + 2SiF6-2(droplet) + 4H+(droplet)

40 [0069] The resulting random size distribution of liquid droplets will be transformed into a random size distribution of
crystals when the surface covered by these liquid droplets will be investigated using a Scanning Electron Microscope,
SEM, operating under vacuum. This phase transformation is provoked by the vacuum evaporation of water from the
liquid droplets and results in the formation of a random size distribution of isolated crystals. The chemical composition
of the individual crystals depends upon the chemical reactions that have occurred in the isolated liquid droplets in direct
45 contact with the moisten atmosphere prior to water evaporation and SEM investigation.
[0070] The hygroscopic nature of the expected uniform surface of ammonium fluorosilicate, the deliquescent nature
of the ammonium fluorosilicate surface provoking the liquefaction of this expected uniform surface into a uniform distri-
bution of liquid droplets, the coalescence of this uniform distribution of liquid droplets into a random distribution of droplets
that can achieve larger heights than the deposited thickness of silicon nitride and the crystallisation of this random
50 distribution of droplets into a random distribution of isolated crystals of various chemical compositions that result from
the exposure of silicon nitride to the upper-mentioned patented anhydrous HF & solvent (or alcohol) additive release
process followed by exposure to moisten atmosphere prior to an ex-situ evaporation in an oven under a nitrogen ambient
at a temperature of more than 240°C at atmospheric pressure is here below demonstrated using two vacuum investigation
techniques: 1) Electron X-Ray Diffraction, EDX, investigation & 2) Secondary Electron Microscopy, SEM, investigation.
55 [0071] The Electron X-Ray Diffraction investigation of Figure 20 compares the composition analysis performed in the
region of the silicon nitride of a MEMS device that had its mechanical structure released. This Figure 20 shows three
compositions profiles that show the composition analysis of:

14
 EP 1 700 822 B1

o The surface of silicon nitride before exposure to the anhydrous HF & solvent (or alcohol) additive release process.
The absence of an oxygen peak confirms a good quality silicon nitride surface prior to the exposure of silicon nitride
to the upper-mentioned patented anhydrous HF & solvent (or alcohol) additive release process;

5 o The silicon nitride surface covered by ammonium fluorosilicate crystals resulting from the exposure of the silicon
nitride to the anhydrous HF & solvent (or alcohol) additive release process. The oxygen peak confirms the predicted
chemical absorption of water vapor by these hygroscopic ammonium fluorosilicate crystals;

o The residual silicon nitride surface resulting from the exposure of the silicon nitride to the anhydrous HF & solvent
10 (or alcohol) additive release process and following the ex-situ evaporation into an ex-situ oven operated at a tem-
perature of more than 240°C under a nitrogen ambient at atmospheric pressure. This composition analysis confirms
the evaporation of ammonium fluorosilicate crystals from the residual silicon nitride.

[0072] It is then clear that the ex-situ evaporation of ammonium fluorosilicate crystals into an ex-situ oven operated
15 at a temperature of more than 240°C under a nitrogen ambient at atmospheric pressure in a typical production environment
implying a direct exposure to moisten ambient atmosphere and an uncontrolled delay between the first moments of this
direct exposure to moisten ambient atmosphere and the ex-situ evaporation of ammonium fluorosilicate crystals into an
ex-situ oven operated at a temperature of more than 240°C under a nitrogen ambient at atmospheric pressure result in
hydrated ammonium fluorosilicate crystals from the adsorbed and absorbed water vapor from the moist ambient atmos-
20 phere.
[0073] The deliquescence nature of ammonium fluorosilicate results in an initial uniform size distribution of liquefied
ammonium fluorosilicate droplets that gradually becomes a random size distribution of coalesced ammonium fluorosil-
icate droplets with the individual droplet dimensions and water content being dictated by water water surface tension
effects:
25
2(NH4)2SiF6(s) in moist ambient → 2(NH4)2SiF6(droplet)

2(NH4)2SiF6(droplet) ↔ 4NH4+(droplet) + 4OH-(droplet) + 2SiF6-2(droplet) + 4H+(droplet)

30 [0074] This surface tension induced differenciation in the water content of the individual liquid droplets is a first step
in the chemical differentiation of the individual ammonium fluorosilicate solution droplets.
[0075] It is well known that ammonium cations in water solutions are very unstable and readily convert to ammonia
by a proton exchange from the ammonium cation to the hydroxyl anion formed from the condensing water vapor:

35 2NH4+(droplet) + 2OH-(droplet) ↔ 2NH3(droplet) + 2H2O(droplet)

[0076] This mechanism is shown in Figure 21. Because ammonia is a gas at atmospheric pressure and temperature,
some of the formed ammonia in the individual liquid droplets, NH3(droplet), do evaporate. This partial and irreversible
ammonia evaporation results in the partial and irreversible elimination of ammonium ions from the individual liquid
40 droplets:

2NH4+(droplet) + 2OH-(droplet) ↔ 2NH3(droplet) + 2H2O(droplet) → NH3(g)↑ + NH3(droplet) + 2H2O

(droplet)

45 [0077] The resulting irreversible decrease of pH of the individual liquefied droplet of various dimensions and water
content which experience the irreversible elimination of more or less of their ammonium cations by irreversible evaporation
of ammonia, NH3(g)↑, is a second step toward the chemical differenciation of these individual droplets (the island solution
becomes more acidic):

50 2(NH4)2SiF6(droplet) → 2NH3(g)↑ + 2NH4+(droplet) + 2OH-(droplet) + 2H2O(droplet) + 2SiF6-2(droplet)

+ 4H+(droplet)

[0078] A similar proton exchange mechanism than the one shown in Figure 21 is also possible with the free protons
and the SiF6-2 anions of the acidic droplets, thus causing the formation of silicon tetrafluoride in the individual droplet
55 having an individual pH level dictating the proton chemical activity:

2SiF6-2(droplet) + 4H+(droplet) → 2SiF4(droplet) + 4HF(droplet)

15
 EP 1 700 822 B1

[0079] Because the resulting silicon tetrafluoride in the liquified droplet, SiF4(droplet), is also a gas at atmospheric
pressure and temperature, some of the formed silicon tetrafluoride in the individual liquid droplet, SiF4(droplet), do
evaporate. This partial and irreversible silicon tetrafluoride evaporation, 2SiF 4(g)↑, results in the irreversible elimination
of fluorine anions from the individual liquid droplet solutions:
5
2SiF6-2(droplet) + 4H+(droplet) ↔ 2SiF4(droplet) + 4HF(droplet) → SiF4(g)↑ + SiF4(droplet) + 4HF
(droplet)

[0080] The resulting decrease of fluorine of the individual liquefied droplet of various dimensions and water content
10 which experience the elimination of more or less of their fluorine by evaporation of silicon tetrafluoride is a third step
toward the chemical differenciation of these individual droplets:

2(NH4)2SiF6(droplet) → 2NH3(g)↑ + 2NH4+(droplet) + 2OH-(droplet) + 2H2O(droplet) + SiF4(g)↑ +

SiF6-2(droplet) + 2H+(droplet) + 2HF(droplet)
15
[0081] Depending upon relative humidity conditions, exposure duration to moisten ambient atmosphere, ambient
temperature and ambient atmospheric pressure, the net and relative proportion of evaporated ammonia, NH 3(g)↑, or
silicon tetrafluoride, SiF4(g)↑, and the surface tension effect of the individual droplets will dictate the residual pH of the
individual droplets by dictating the residual water content, H2O(droplet), as well as the residual proportion of ammonium
20 solution, 2NH4+(droplet)+20H-(droplet), and the residual proportion of fluorosililic acid solution, SiF6-2(droplet)+2H+(drop-
let), within the various dimension liquid droplets.
[0082] Some of these individual droplets will have a relative chemical composition of ammonium solution, 2NH4+
(droplet)+20H-(droplet), and fluorhydric acid, HF(droplet), which will provoke a fourth and undesirable step: the chemical
formation of ammonium bifluoride (also called ammonium hydrogendifluoride) in some of the droplets, NH4HF2(droplet):
25
NH4+(droplet) + OH-(droplet) + 2HF(droplet) ↔ NH4HF2(droplet) + H2O(droplet)

[0083] The resulting undesirable chemical reaction between the ammonium solution, 2NH4+(droplet)+20H-(droplet),
and hydrofluoric acid, HF(droplet), is a fourth undesible step toward the chemical differenciation of these individual
30 droplet and is to be avoided as to ensure a residue-free complete evaporation of these various liquid droplets during the
ex-situ evaporation in the ex-situ oven operated at a temperature of more than 240°C under a nitrogen ambient at
atmospheric pressure:

2(NH4)2SiF6(droplet) → 2NH3(g)↑ + NH4+(droplet) + OH-(droplet) + 3H2O(droplet) + SiF4(g)↑ + SiF6-2

35 (droplet) + 2H+(droplet) + NH4HF2(droplet)

[0084] The ammonium bifluoride now in solution in some specific droplets are indeed deliquesced ammonium bifluoride
crystals:

40 o http://www.chemnet.com/show/galtchem/eproduct/00018839.html

[0085] A large proportion of the formed droplets could result in the formation of these undesirable deliquesced am-
monium bifluoride crystals because ammonium bifluoride has a high solubility of 630 grams/liter in water @ 20°C.
[0086] Some of these individual droplets having a pH and a proportion of ammonium bifluoride crystals, NH4HF2
45 (droplet), prone to ammonium bifluoride decomposition will trig a fifth and undesirable step: the chemical formation of
ammonium fluoride, NH4F(droplet):

NH4HF2(droplet) → NH4F(droplet) + HF(droplet)

50 [0087] The resulting undesirable decomposition of deliquesced ammonium bifluoride crystals, NH4HF2(droplet), into
deliquesced ammonium fluoride crystals, NH4F(droplet), is a fifth undesible step toward the chemical differenciation of
these individual droplet and is to be avoided as to ensure a residue-free complete evaporation of these various liquid
droplets during the ex-situ evaporation in the ex-situ oven operated at a temperature of more than 240°C under a nitrogen
ambient at atmospheric pressure:
55
2(NH4)2SiF6(droplet) → 2NH3(g)↑ + NH4+(droplet) + OH-(droplet) + 3H2O(droplet) + SiF4(g)↑ + SiF6-2
(droplet) + 2H+(droplet)
+ NH4F(droplet) + HF(droplet)

16
 EP 1 700 822 B1

[0088] Since ammonium fluoride, NH4F, has a melting point of 993°C and a boiling point of 1700°C it is then solid at
room temperature. This net transformation of deliquesced ammonium fluorosilicate crystals, (NH4)2SiF6 (deliquesced),
into deliquesced ammonium bifluoride crystals, NH4HF2(deliquesced), will result in a random distribution of residual
ammonium fluoride crystals, NH4F(s), on the silicon nitride surface following the ex-situ evaporation in the ex-situ oven
5 operated at a temperature of more than 240°C under a nitrogen ambient at atmospheric pressure in which:

o The residual ammonium solution of the droplets, NH4+(droplet) + OH-(droplet), will evaporate as volatile ammonia,
NH3(g)↑, and water vapor, H2O(droplet) ↑;

10 o The residual fluorosililic acid of the droplets, SiF6 2(droplet)+2H+(droplet), will evaporate as volatile silicon tetraflu-
oride, SiF4(g)↑, and hydrofluoric acid, 2HF(droplet) ↑;

o The residual deliquesced ammonium fluoride crystals of the droplets, NH4F(droplet), will leave a random distribution
of solid fluoride crystals residues, NH4F(s), onto the silicon nitride surfaces.
15
[0089] It is clear that the ex-situ evaporation of ammonium fluorosilicate, (NH4)2SiF6, into an ex-situ oven operated
at a temperature of more than 240°C under a nitrogen ambient at atmospheric pressure in a typical production environment
implying a direct exposure to moisten ambient atmosphere and an uncontrolled delay between the first moments of this
direct exposure to moisten ambient atmosphere and the ex-situ evaporation of ammonium fluorosilicate, (NH4)2SiF6,
20 into an ex-situ oven operated at a temperature of more than 240°C under a nitrogen ambient at atmospheric pressure
results in a undesirable random distribution of residual ammonium fluoride crystals which presence causes very serious
yield problems as an alternate way to achieve operator-safe residue-free release of anhydrous HF to release MEMS
micro-devices integrating very sensitive moving mechanical parts, digital and/or analog CMOS control logic and/or high
voltage CMOS drivers capable of performing actuation functions:
25
2(NH4)2SiF6(s) → 3NH3(g)↑ + 2SiF4(g)↑ + 3HF(g)↑ + NH4F(s)

[0090] The presence of this random distribution of solid ammonium fluoride crystals residues that CANNOT be evap-
orated anymore using the ex-situ evaporation of ammonium fluorosilicate crystals into an ex-situ oven operated at a
30 temperature of more than 240°C under a nitrogen ambient at atmospheric pressure (if the evaporation temperature is
maintained lower than ammonium fluoride’s, NH4F, boiling point of 1700°C) is a very serious problem that needs to be
eliminated.
[0091] The formation of these non-evaporated ammonium fluoride residues has been observed for air-exposed am-
monium fluorosilicate crystals that we tried to evaporate using ex-situ evaporation of these ammonium fluorosilicate
35 crystals into an ex-situ oven operated at a temperature of more than 240°C under nitrogen ambient at atmospheric
pressure.
[0092] The hygroscopic nature of the expected uniform surface of ammonium fluorosilicate, the deliquescent nature
of the ammonium fluorosilicate surface provoking the liquefaction of this expected uniform surface into a uniform series
of liquid droplet, the coalescence of this series of uniform liquid droplet into a random distribution of isolated droplets
40 that can achieve larger heights than the deposited thickness of silicon nitride, the subtle chemical reactions resulting in
ammonia and silicon tetrafluoride evaporation from some of these formed droplets and the random formation of deli-
quesced ammonium fluoride within this random distribution of liquid droplets that result from the exposure of silicon
nitride to the upper-mentioned patented anhydrous HF & solvent (or alcohol) additive release process to a moisten
ambient atmosphere is clearly demonstrated using the Secondary Electron Microscopy investigation of Figure 22 that
45 shows pictures of the surface of the wafers:

o Picture 1: Before exposure to anhydrous HF & solvent (or alcohol) additive process of the upper mentioned USA
Patent 5,439,553. This shows the very clean surface of silicon nitride;

50 o Picture 2: After exposure to anhydrous HF & solvent (or alcohol) additive process of the upper mentioned USA
Patent 5,439,553. This very rough surface covered by a random distribution of semi-evaporated droplets following
the room temperature exposure to the vacuum required for SEM investigation. Note the quasi-spherical shape and
individual size of the observed ammonium fluorosilicate, (NH4)2SiF6(s), ammonium bifluoride, NH4HF2(s), or am-
monium fluoride, NH4F(s), residues are indeed quite larger than the initial 0.2Pm thickness of attacked silicon nitride,
55 thus proving the droplet coalescence mechanism;

o Picture 3: After exposure to anhydrous HF & solvent (or alcohol) additive process of the upper mentioned USA
Patent 5,439,553 and ex-situ oven evaporation at a temperature of more than 240°C under a nitrogen ambient at

17
 EP 1 700 822 B1

atmospheric pressure. Note the rough surface covered by a random shape and size distribution of residual ammonium
fluorosilicate, (NH4)2SiF6(s), ammonium bifluoride, NH4HF2(s), or ammonium fluoride, NH4F(s), crystals are indeed
quite larger than the initial 0.2Pm thickness of attacked silicon nitride, thus proving the droplet coalescence mech-
anism.
5
[0093] Figure 23 shows another spectacular demonstration of the droplets coalescence mechanism. This optical image
of a MEMS device following the removal, using an anhydrous HF process, of the sacrificial oxide layer located over an
underlayer of silicon nitride shows:

10 o A field region where a relatively uniform distribution of quasi-spherical shape ammonium fluorosilicate, (NH4)2SiF6
(s), ammonium bifluoride, NH4HF2(s), or ammonium fluoride, NH4F(s), droplets residues with a uniform spacing
between the individual droplets residues to be sublimated into the ex-situ oven operated at a temperature of more
than 240°C under nitrogen ambient at atmospheric pressure;

15 o Two residue-free circular regions where the individual droplets of the initially uniform distribution of quasi-spherical
shape ammonium fluorosilicate, (NH4)2SiF6(s), ammonium bifluoride, NH4HF2(s), or ammonium fluoride, NH4F(s),
droplets have coalesced into two large size droplets that left behind two large droplets residues to be sublimated
into the ex-situ oven operated at a temperature of more than 240°C under nitrogen ambient at atmospheric pressure;

20 o A 15-20Pm wide residue-free band along the mechanical structure region of the MEMS device where where the
individual droplets of the initially uniform distribution of quasi-spherical shape ammonium fluorosilicate, (NH4)2SiF6
(s), ammonium bifluoride, NH4HF2(s), or ammonium fluoride, NH4F(s), droplets have coalesced aside and under
the release mechanical structures of the MEMS device as a random distribution of large size droplets that left behind
a random distribution of large droplets residues to be sublimated into the ex-situ oven operated at a temperature of
25 more than 240°C under nitrogen ambient at atmospheric pressure.

[0094] Unfortunately, this coalescence mechanism results in the formation of residues that are non-sublimable at low
temperature, such as ammonium fluoride, NH4F(s). These residues are undesirable because they can block the mech-
anisms of the released mechanical parts.
30 [0095] It is clear that the health and safety hazards associated with the operator exposure to the toxic ammonium
fluorosilicate crystals, (NH4)2SiF6(s), covering the surface of the wafers following the exposure of the wafers to a anhy-
drous HF & solvent (or alcohol) additive process of the upper mentioned USA Patent 5,439,553 is NOT a desirable
technique to safely evaporate these residues because of the presence of hazardous volatile ammonia, silicon tetrafluoride
and hydrofluoric acid by-products:
35
2(NH4)2SiF6(s) → 3NH3(g)↑ + 2SiF4(g)↑ + 3HF(g)↑ + NH4F(s)

[0096] It is also clear that the use of an ex-situ evaporation of ammonium fluorosilicate crystals exposed to a moisten
ambient atmosphere prior to an evaporation into an ex-situ oven operated at a temperature of more than 240°C under
40 a nitrogen ambient at atmospheric pressure results in a random distribution of solid crystals of very important dimensions
causing serious mechanical issued is not a desirable technique to reliably release mechanical parts as to achieve stiction-
free and residue-free release of MEMS micro-devices integrating very sensitive moving mechanical parts, digital and/or
analog CMOS control logic and/or high voltage CMOS drivers capable of performing actuation functions:

45 2(NH4)2SiF6(s)→ 3NH3(g)↑ + 2SiF4(g)↑ + 3HF(g)↑ + NH4F(s)

[0097] The removal of the solid phase sacrificial oxide layer, Si02(s), using a gas phase anhydrous vapor hydrofluoric
acid HF(g), produces a clean residue-free elimination of oxide by simple evaporation of gas phase silicon tetrafluoride,
SiF4(g)↑, and gas phase water vapor, H2O(g)↑:
50
SiO2(s) + 4HF(g)→ SiF4(g)↑ + 2H2O(g)↑

[0098] Unfortunately, the silicon nitride dielectric layer, Si 3N4(s), which is typically used as an underlying protective
etch-stop layer underneath the oxide to be removed as to limit the penetration of the anhydrous HF and as to prevent
55 the attack of other oxide layers underneath this silicon nitride etch-stop layer does not resist very well when exposed to
this anhydrous HF & solvent (or alcohol) additive release process since the exposure of this silicon nitride to anhydrous
HF results in an undesirable chemical attack resulting the formation of solid surface of toxic ammonium fluorosilicate,
(NH4)2SiF6(s):

18
 EP 1 700 822 B1

Si3N4(s) + 16 HF(g)→ SiF4(g)↑ + 2(NH4)2SiF6(s)

[0099] It is known from the Material Safety Data Sheet of ammonium fluorosilicate, (NH4)2SiF6(s):
5
o "MSDS of Ammonium Fluorosilicate", LCI,Ltd., P. O. Box 49000, Jacksonville Beach, FL 32240-9000, http:
//www.lciltd.com/msds%5Cmsdsasf.htm

o http://www.flouridealert.com/pesticides/ammonium.fluosilicate.msds.ht m ;
10
that the formed toxic ammonium fluorosilicate, (NH4)2SiF6(s), solid surface is thermally unstable and experiences a
thermal decomposition which provoke the evaporation of gas phase silicon tetrafluoride, SiF4(g)↑, and gas phase am-
monia, NH3(g)↑, and results in the formation of a residual toxic ammonium bifluoride, NH 4HF2(s), solid surface at a
temperature of more than 100°C:
15
2(NH4)2SiF6(s) → 2SiF4(g)↑ +2NH3(g)↑ + 2NH4HF2(s)

[0100] It is also known from the Material Safety Data Sheet of ammonium bifluoride, NH4HF2(s):

20 o "MSDS of Ammonium Bifluoride", Ampex Chemicals, S.A. de C.V., http://www.analytyka.com.mx/tab-

la%20periodica/MSDS/N/AMMONIUM%20BIFL UORIDE.htm;
that the formed ammonium bifluoride, NH4HF2(s), solid surface has a melting point of 124.6°C and a boiling point
of 240°C at atmospheric pressure. The following publication:

25 o B. Du Bois, G. Vereecke, A. Wltvrouw, P. De Moor, C. Van Hoof, A. De Caussemaeker, A. Verbist, "HF Etching
of Si-oxides and Si-nitrides for Surface Micromachining", IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, IST Project
SUMICAP (IST-1999-10620)

gives an estimated phase diagram for ammonium bifluoride, NH4HF2.

30 [0101] Figure 24 shows a re-sketch of the ammonium bifluoride, NH4HF2, phase diagram with an emphasis on the
location of the triple point, i.e. the pressure and temperature at which the solid, liquid and gas phases of ammonium
bifluoride, NH4HF2 coexist. This estimated location of the triple point is critically important for the present invention
because it predicts which conditions of vacuum and pressure should be used to allow the in-situ sublimation of ammonium
bifluoride, without any intermediate liquid phase formation.
35 [0102] Figure 24 estimates that the complete sublimation of ammonium fluorosilicate, (NH4)2SiF6(g)↑, and of ammo-
nium bifluoride, NH4HF2(g)↑, is possible without any intermediate liquid phase formation at a pressure of less than the
ammonium bifluoride triple point pressure of about 5,333 Pa (40Torr) if the temperature is higher than the ammonium
bifluoride sublimation temperature and if the temperature is higher than the ammonium fluorosilicate decomposition
temperature T° of 100°C:
40
2(NH4)2SiF6(s) → 2SiF4(g)↑ +2NH3(g)↑ + 2NH4HF2(g)↑

[0103] Figure 24 shows that an anhydrous HF release process operating at a pressure of less than the ammonium
bifluoride triple point pressure of about 5,333 Pa (40Torr) and at the temperature of the highlighted grey zone of Figure
45 24 could result in a residue-free removal of the oxide sacrificial layer and in a residue-free attack of the underlying silicon
nitride etch-stop layer:

Si02(s) + 4HF(g) → SiF4(g)↑ + 2H2O(g)↑ Si3N4(s) + 16 HF(g) → SiF4(g)↑ + 2SiF4(g)↑ +2NH3(g)↑ +

2NH4HF2(g)↑
50
[0104] Unfortunately, Figure 25 shows that the vapor pressure of anhydrous HF increases very rapidly with an increase
of temperature from room temperature to the temperature of the highlighted grey zone of Figure 24 which allows a
residue-free release of sacrificial oxide. This increase of vapor pressure on anhydrous HF results in an important reduction
of the adsorption rate of HF molecules and reduces the net surface coverage of adsorbed HF molecules onto the surface
55 of the oxide to be removed. Since HF surface coverage onto the sacrificial oxide to be removed is one of the initating
steps provoking its removal, it is necessary to maintain a good surface coverage of anhydrous HF molecules onto the
surface of the oxide sacrificial layer.
[0105] The surface ratio, ν/νm of the actual surface coverage of anhydrous HF adsorbed onto the oxide sacrificial

19
 EP 1 700 822 B1

layer, v, to the maximum amount of anhydrous HF that can be adsorbed as to form a complete monolayer, νm, at an
absolute temperature, T, follows the Brunauer-Emmet-Teller (BET) equation

10

described in the following publication:

15
o S. Brunauer, P.H. Emmet, E.Teller, "Adsorption of Gases in Multimolecular Layers", J. Am. Chem. Soc., 60, 1938,
pp. 309-319;
and where:

20 o P is the pressure above the oxide sacrificial layer;

o Po is the vapour pressure of anhydrous HF at the absolute temperature, T;

o c is a constant exponentially related to the heat of adsorption, Ea, of anhydrous HF onto the sacrificial oxide
25 layer and to the heat of liquefaction, El, of anhydrous HF at the absolute temperature, T:

30

o c’ is another constant.

35 [0106] Figure 26 shows the Brunauer-Emmet-Teller (BET) plot describing the relative surface coverage ratio, ν/νm,
of anhydrous HF adsorbed onto the oxide sacrificial layer at a temperature of either 25°C or 75°C. This Figure 26 is a
re-print of the data reported in the following publication:

o C. S. Lee, J. T. Baek, H. J. Yoo, S. E. Woo, "Modeling and Characterization of Gas-Phase Etching of Thermal
40 Oxide and TEOS Oxide Using Anhydrous HF and CH3OH", J. Electrochem Soc., Vol. 143, No. 3, March 1996. pp.
1099-1103;

[0107] It is clear from this Figure 26 that although an operation of the anhydrous HF release process at a pressure of
less than the ammonium bifluoride, NH4HF2, triple point pressure of about 5,333 Pa (40Torr) and at the temperature of
45 the highlighted grey zone of Figure 24 could result in a redidue-free removal of the oxide sacrificial layer and in a residue-
free attack of the underlying silicon nitride etch-stop layer

Si02(s) + 4HF(g) → SiF4(g)↑ + 2H2O(g)↑ Si3N4(s) + 16 HF(g) → SiF4(g)↑ + 2SiF4(g)↑ +2NH3(g)↑ +

2NH4HF2(g)↑
50
such release conditions of the sacrificial oxide results in a logarithmic reduction of the surface coverage of anhydrous
HF raw material onto the surface of sacrificial oxide to be released; i.e. the BET plot of Figure 26 indicates that a release
process at a temperature of more than 100°C and at a pressure of less than 5,333 Pa (40 Torr) results in a very little
surface coverage of anhydrous HF and, potentially, in a too slow release process to be used as a manufacturing process.
55 [0108] This undesirable reduction of release rate due to the poor surface coverage of HF when operating the anhydrous
HF release at a process pressure less than the ammonium bifluoride, NH4HF2, triple point pressure of about 5,333 Pa
(40Torr) and at a process temperature within the highlighted grey zone of Figure 24 is shown in Figure 27 which shows
a re-print of the results described in the following reference:

20
 EP 1 700 822 B1

o K. Torek, J. Ruzyllo, R. Grant, R. Novak, "Reduced Pressure Etching of Thermal Oxides in Anhydrous HF/Alcoholic
Gas Mixtures", J. Electrochem Soc., Vol. 142, No. 4, April 1995, pp. 1322-1326;

[0109] Figure 27 confirms the undesirable and unacceptable reduction of release rate associated to an anhydrous HF
5 processes operating at a pressure of less than 5,333 Pa (40 Torr) and at a temperature of more than 100°C as to achieve
a residue-free removal of sacrificial oxides at a pressure of less than the ammonium bifluoride, NH4HF2, triple point
pressure of about 5,333 Pa (40Torr) and at the temperature of the highlighted grey zone of Figure 24. This reduction of
the release rate (at temperatures above 100°C) to less than about 0.1 Pm/minute (100nm/minute) is indeed undesirable
for the mass production of advanced MEMS devices because it is necessary to release the sacrificial oxide over a lateral
10 distance typically ranging between 5Pm (50 minutes release at the minimum desirable rate of 0.1Pm/minute) and 200Pm
(2,000 minutes or about 33 hours) underneath the suspended mechanical part as to free its movement. Refering again
to Figure 27, anhydrous HF processes operating at a temperature of more than 100°C and at a pressure of less than
5,333 Pa (40 Torr) as to achieve a residue-free removal of sacrificial oxides (the highlighted grey zone of Figure 24)
would imply undesirable release durations:
15
o A 200Pm lateral release at a total pressure of 13,332 Pa (100 Torr) (not yet the desirable maximum release
pressure of 5,333 Pa (40 Torr)) would take a minimum of about 100,000 minutes or 69 days to be completed at the
expected release rate of 2nm/minute and this, independently of the solvent used in combination to the anhydrous HF;

20 o A 5Pm lateral release at a total pressure of 13,332 Pa (100 Torr) (not yet the desirable maximum release pressure
of 5,333 Pa (40 Torr)) would still take a minimum of about 2,500 minutes or 42 hours to be completed at the expected
release rate of 2nm/minute and this, independently of the solvent used in combination to the anhydrous HF;

[0110] These very undesirable release durations show that it is not acceptable to perform the anhydrous HF release
25 process at a pressure of less than 5,333 Pa (40 Torr) and at a temperature of more than 100°C to achieve a residue-
free removal of sacrificial oxides at a pressure of less than the ammonium bifluoride, NH4HF2, triple point pressure of
about 5,333 Pa (40Torr) and at the temperature of the highlighted grey zone of Figure 24.
[0111] A custom-made batch release chamber capable of releasing up to 24 wafers simultaneously was constructed.
This custom-made batch release chamber can be delivered attached to a cluster tool similar to the one shown in Figure
30 14 which allows the connection of up to five (5) such batch release chambers and of up to two (2) independent vacuum
cassette load stations around a central vacuum transfer chamber that can isolate the five (5) individual batch chambers
from each other as well as the two (2) individual cassette elevators.
[0112] This batch chamber design allows the release of up to 24 wafers simultaneously and then relaxes the need for
a fast release process. This batch chamber design allows the release at temperatures lower than 100°C and/or pressures
35 of more than 5,333 Pa (40 Torr) to achieve faster release rates (Figure 27) and, following proper release at a temperature
of less than 100°C and/or at a pressure of more than 5,333 Pa (40 Torr), allows the temperature to be increased to more
than 100°C and the pressure to be reduced to less than 5,333 Pa (40 Torr) to achieve a residue-free removal of sacrificial
oxides at a pressure of less than the ammonium bifluoride, NH4HF2, triple point pressure of about 5,333 Pa (40Torr)
and at the temperature of the highlighted grey zone of Figure 24.
40 [0113] This combination of a batch anhydrous HF release process (with or without solvents or alcohols) at temperatures
lower than 100°C and/or pressures of more than 5,333 Pa (40 Torr) as to achieve faster release rates followed by an
in-situ sublimation of undesirable reaction by-products at a temperature higher than 100°C and at a pressure of less
than 5,333 Pa (40 Torr) as to achieve a residue-free removal of sacrificial oxides at a pressure of less than the ammonium
bifluoride, NH4HF2, triple point pressure of about 5,333 Pa (40Torr) and at the temperature of the highlighted grey zone
45 of Figure 24 is the basis of one embodiment of the present invention.
[0114] The use of such a batch release chamber and of such a cluster tool configuration allows the anhydrous HF
release to be performed at temperatures lower than 100°C and/or pressures of more than 5,333 Pa (40 Torr) as to
achieve a release rate of at least 0.1Pm/minute:

50 Si02(s) + 4HF(g) → SiF4(g)↑ + 2H2O(g)↑ Si3N4(s) + 16 HF(g) → 2(NH4)2SiF6(s) + SiF4(g)↑

[0115] This minimum release rate of 0.1 Pm/minute in such a custom-made batch chamber and in such a cluster tool
equiped with five (5) anhydrous HF batch release chambers each capable of releasing up to 24 MEMS wafers simulta-
neously (for a total of 120 MEMS wafers that can be released simultaneously) is indeed acceptable for the mass production
55 of advanced MEMS devices because the sacrificial oxide release over the same lateral distances ranging between 5Pm
and 200Pm underneath the suspended mechanical part as to free its movement would imply acceptable release durations:

o A 200Pm lateral release at a minimum rate of 0.1Pm/minute would provide a net throughput of about 3.6 wafers

21
 EP 1 700 822 B1

per hour; i.e. 5 stations, each releasing 200Pm of sacrificial oxide on 24 wafers within 33 hrs;
o A 5Pm lateral release at a minimum rate of 0.1Pm/minute would
provide a net throughput of about 144 wafers/hour; i.e. 5 stations, each releasing 5Pm of sacrificial oxide on 24
wafers within 50 minutes.
5
[0116] Such a spectacular increase of process throughput allows the cluster tool to be used for a controlled (without
exposure to the moisten ambient atmosphere) in-situ sublimation of the undesirable reaction by-products at a temperature
higher than 100°C and at a pressure of less than 5,333 Pa (40 Torr) as to achieve a residue-free removal of sacrificial
oxides at a pressure of less than the ammonium bifluoride, NH4HF2, triple point pressure of about 5,333 Pa (40Torr)
10 and at the temperature of the highlighted grey zone of Figure 24 without too much penalty on the process throughput:

2(NH4)2SiF6(s) → 2NH4HF2(g)↑ + 2SiF4(g)↑ +2NH3(g)↑

[0117] This very important feature is key to the present invention because it allows the prevention of the indesirable
15 effects of exposure of the silicon nitride reaction by-products to moisten ambient atmosphere and allows a clean release
of the sacrificial oxide layer and an operator-safe and clean sublimation of the silicon nitride reaction by-products:

Si02(s) + 4HF(g) → SiF4(g)↑ + 2H2O(g)↑ Si3N4(s) + 16 HF(g) → 2NH4HF2(g)↑ + 3SiF4(g)↑ +2NH3(g)↑

20 [0118] Embodiments of the invention offer a number of advantages over the prior art. The in-situ evaporation allows
a residue-free etch of the sacrificial oxide layer covering an etch-stop silicon nitride underlayer, a residue-free release
of the structural layer of a micro-electro-mechanical system (MEMS), an operator-safe etch the sacrificial oxide layer
covering an etch-stop silicon nitride underlayer, an operator-safe release of the structural layer of a micro-electro-
mechanical system (MEMS), a stiction-free etch of the sacrificial oxide layer covering an etch-stop silicon nitride under-
25 layer, and a stiction-free release of the structural layer of a micro-electro-mechanical system (MEMS).
[0119] The method in accordance with the invention can be used to fabricate electro-mechanical systems integrating
very sensitive moving mechanical parts, digital and/or analog CMOS control logic and/or high voltage CMOS drivers
capable of performing actuation functions. The digital and/or analog CMOS control logic and/or high voltage CMOS
drivers may integrate metal interconnects composed, for example, of aluminum, aluminum alloys, aluminium compounds,
30 titanium, titanium alloys, titanium compounds, copper, gold, tungsten, tungsten alloys, tungsten compounds, molybde-
num, molybdenum alloys, molybdenum compounds, or combinations of these.

Claims
35
1. A method of releasing a sacrificial oxide layer covering an etch-stop silicon nitride underlayer, comprising:

etching away the sacrificial oxide by exposure to anhydrous HF at a temperature of less than 100°C and/or a
pressure greater than 5,333 Pa until the etch stop layer is reached; and
40 subsequently performing without exposure to ambient air, and at a selected pressure less than 5,333 Pa and
at a selected temperature greater than the highest of 100°C or the sublimation temperature of ammonium
bifluoride at the selected pressure, an in-situ vacuum evaporation of ammonium fluorosilicate and ammonium
bifluoride etch by-products resulting from exposure of the silicon nitride to anhydrous HF.

45 2. A method as claimed in claim 1, wherein the etching of sacrificial oxide is used to release a structural layer of a
micro-electro-mechanical system.

3. A method as claimed in any one of claims 1 or 2, wherein the in-situ evaporation is an in-situ sublimation of the etch
by-products.
50
4. A method as claimed in any one of claims 1 to 3, wherein the in-situ evaporation is an in-situ thermal decomposition
followed by an in-situ sublimation of the etch by-products.

5. A method as claimed in claim 2, wherein the micro-electro-mechanical system integrates very sensitive moving
55 mechanical parts, digital and/or analog CMOS control logic and/or high voltage CMOS drivers capable of performing
actuation functions.

6. A method as claimed in claim 5, further comprising the step of providing metal interconnects for the digital and/or

22
 EP 1 700 822 B1

analog CMOS control logic and/or high voltage CMOS drivers.

7. A method as claimed in claim 6, wherein the metal interconnects are selected from the group consisting of: aluminum,
aluminum alloys, aluminium compounds, titanium, titanium alloys, titanium compounds, copper, gold, tungsten,
5 tungsten alloys, tungsten compounds, molybdenum, molybdenum alloys, molybdenum compounds, and combina-
tions thereof.

8. A method as claimed in any one of claims 1 to 7, which is performed on wafers in a batch release process.

10 9. A method as claimed in claim 8, wherein said batch release process is implemented in a cluster tool.

10. A method as claimed in any one of claims 1 to 9, wherein the anhydrous HF is employed in combination with an
organic volatile additive.

15 11. A method as claimed in claim 10, wherein the organic volatile additive is selected from the group consisting of:
methanol, acetone, 1-buthanol, 2-buthanol, I-propanol, 2-propanol and combinations thereof.

Patentansprüche
20
1. Verfahren zur Ablösung einer Oxid-Opferschicht, die eine Siliciumnitrid-Ätzstoppunterschicht bedeckt, wobei das
Verfahren aufweist:

Wegätzen des Opferoxids durch Einwirkung von wasserfreier HF bei einer Temperatur von weniger als 100°C
25 und/oder einem Druck von mehr als 5333 Pa, bis die Ätzstoppschicht erreicht ist; und
anschließend Durchführung einer In-situ-Vakuumverdampfung von Ammoniumfluorsificat- und Ammonium-
bifluorid-Ätznebenprodukten, die von der Einwirkung von wasserfreier HF auf das Siliciumnitrid herrühren, ohne
Zutritt von Umgebungsluft und bei einem gewählten Druck von weniger als 5333 Pa und einer gewählten
Temperatur, die höher ist als der höchste Wert von 100°C oder der Sublimationstemperatur von Ammonium-
30 bifluorid bei dem gewählten Druck.

2. Verfahren nach Anspruch 1, wobei das Ätzen des Opferoxids zur Ablösung einer Strukturschicht eines mikroelek-
tromechanischen Systems dient.

35 3. Verfahren nach einem der Ansprüche 1 oder 2, wobei die In-situ-Verdampfung eine In-situ-Sublimation der Ätzne-
benprodukte ist.

4. Verfahren nach einem der Ansprüche 1 bis 3, wobei die In-situ-Verdampfung eine thermische In-situ-Zersetzung
mit anschließender In-situ-Sublimation der Ätznebenprodukte ist.
40
5. Verfahren nach Anspruch 2, wobei das mikroelektromechanische System sehr empfindliche bewegliche mechani-
sche Teile, digitale und/oder analoge CMOS-Steuerlogik und/oder Hochspannungs-CMOS-Treiber integriert, die
Betätigungsfunktionen ausführen können.

45 6. Verfahren nach Anspruch 5, das ferner den Schritt zur Bereitstellung von Metallzwischenträgern für die digitale und/
oder analoge CMOS-Steuerlogik und/oder die Hochspannungs-CMOS-Treiber aufweist.

7. Verfahren nach Anspruch 6, wobei die Metallzwischenträger aus der Gruppe ausgewählt sind, die aus Aluminium,
Aluminiumlegierungen, Aluminiumverbindungen, Titan, Titanlegierungen, Titanverbindungen, Kupfer, Gold, Wolf-
50 ram, Wolframlegierungen, Wolframverbindungen, Molybdän, Molybdänlegierungen, Molybdänverbindungen und
Kombinationen davon besteht.

8. Verfahren nach einem der Ansprüche 1 bis 7, das an Wafern in einem diskontinuierlichen Ablösungsprozeß durch-
geführt wird.
55
9. Verfahren nach Anspruch 8, wobei der diskontinuierliche Ablösungsprozeß in einem Cluster-Werkzeug durchgeführt
wird.

23
 EP 1 700 822 B1

10. Verfahren nach einem der Ansprüche 1 bis 9, wobei die wasserfreie HF in Kombination mit einem organischen
flüchtigen Zusatzstoff angewandt wird.

11. Verfahren nach Anspruch 10, wobei der organische flüchtige Zusatzstoff aus der Gruppe ausgewählt ist, die aus
5 Methanol, Ethanol, 1-Butanol, 2-Butanol, 1-Propanol, 2-Propanol und Kombinationen davon besteht.

Revendications

10 1. Procédé de libération d’une couche d’oxyde sacrificiel couvrant une sous-couche de nitrure de silicium d’arrêt de
gravure, comprenant:

l’élimination par gravure de l’oxyde sacrificiel par une exposition à HF anhydre à une température de moins de
100°C et/ou une pression de plus de 5333 Pa jusqu’à ce que la couche d’arrêt de gravure soit atteinte; et
15 la réalisation par la suite sans exposition à l’air ambiant, et à une pression choisie de moins de 5333 Pa et à
une température choisie supérieure à la température maximum de 100°C et la température de sublimation de
bifluorure d’ammonium à la pression choisie, d’une évaporation sous vide in-situ de sous-produits de gravure
de fluorosilicate d’ammonium et de bifluorure d’ammonium résultant de l’exposition du nitrure de silicium à HF
anhydre.
20
2. Procédé selon la revendication 1, dans lequel la gravure de l’oxyde sacrificiel est employée pour libérer une couche
structurale d’un système micro-électro-mécanique.

3. Procédé selon l’une quelconque des revendications 1 et 2, dans lequel l’évaporation in-situ est une sublimation in-
25 situ des sous-produits de gravure.

4. Procédé selon l’une quelconque des revendications 1 à 3, dans lequel l’évaporation in-situ est une décomposition
thermique in-situ suivie par une sublimation in-situ des sous-produits de gravure.

30 5. Procédé selon la revendication 2, dans lequel le système micro-électro-mécanique intègre des parties mécaniques
mobiles très sensibles, une logique de commande CMOS numérique et/ou analogique et/ou des drivers CMOS
haute tension capables d’effectuer des fonctions d’activation.

6. Procédé selon la revendication 5, comprenant en outre l’étape de fourniture d’interconnections métalliques pour la
35 logique de commande CMOS numérique et/ou analogique et/ou les drivers CMOS haute tension.

7. Procédé selon la revendication 6, dans lequel les interconnections métalliques sont choisies dans le groupe constitué:
d’aluminium, d’alliages d’aluminium, de composés d’aluminium, de titane, d’alliages de titane, de composés de
titane, de cuivre, d’or, de tungstène, d’alliages de tungstène, de composés de tungstène, de molybdène, d’alliages
40 de molybdène, de composés de molybdène et de combinaisons de ceux-ci.

8. Procédé selon l’une quelconque des revendications 1 à 7, qui est effectué sur des rondelles dans un procédé de
libération par lots.

45 9. Procédé selon la revendication 8, dans lequel ledit procédé de libération par lots est exécuté dans un outil multiposte.

10. Procédé selon l’une quelconque des revendications 1 à 9, dans lequel HF anhydre est employé en combinaison
avec un additif volatil organique.

50 11. Procédé selon la revendication 10, dans lequel l’additif volatil organique est choisi dans le groupe constitué: de
méthanol, d’acétone, de 1-butanol, de 2-butanol, de 1-propanol, de 2-propanol et de combinaisons de ceux-ci.

55

24
EP 1 700 822 B1

25
EP 1 700 822 B1

26
EP 1 700 822 B1

27
EP 1 700 822 B1

28
EP 1 700 822 B1

29
EP 1 700 822 B1

30
EP 1 700 822 B1

31
EP 1 700 822 B1

32
EP 1 700 822 B1

33
EP 1 700 822 B1

34
EP 1 700 822 B1

35
EP 1 700 822 B1

36
EP 1 700 822 B1

37
EP 1 700 822 B1

38
EP 1 700 822 B1

39
EP 1 700 822 B1

40
EP 1 700 822 B1

41
EP 1 700 822 B1

42
EP 1 700 822 B1

43
EP 1 700 822 B1

44
EP 1 700 822 B1

45
EP 1 700 822 B1

46
EP 1 700 822 B1

47
EP 1 700 822 B1

48
EP 1 700 822 B1

49
EP 1 700 822 B1

50
EP 1 700 822 B1

51
 EP 1 700 822 B1

REFERENCES CITED IN THE DESCRIPTION

This list of references cited by the applicant is for the reader’s convenience only. It does not form part of the European
patent document. Even though great care has been taken in compiling the references, errors or omissions cannot be
excluded and the EPO disclaims all liability in this regard.

Patent documents cited in the description

• WO 03055791 A [0041] • US 6238580 B [0045]

• US 4749440 A [0045] • US 5439553 A [0050] [0053] [0054] [0092] [0095]
• US 5174855 A [0045] • US 6656528 B [0054]

Non-patent literature cited in the description

• G. MATAMIS ; B. GOGOIB ; D. MONKB ; A. • C. W. DYCK ; J. H. SMITH ; S. L. MILLER ; E. M.

MCNEILB ; V. BURROWS. Release etch modeling RUSSICK ; C. L. J. ADKINS. Supercritical carbon
analysis and the use of Laser Scanning microscopy dioxide solvent extraction from surface-microma-
for etch time prediction of micromachined structures. chined micromechanical structures. SPIE Microma-
Proc. of SPIE, September 2000, vol. 4174 [0005] chining and Microfabrication, October 1996 [0032]
• K. R. WILLIAMS ; R. S. MULLER. Etch Rates for • C. H. MASTRANGELO. Adhesion-related failure
Micromachining Processing. Journal of Microelectro- mechanisms in micromechanical device. Tribology
mechanical Systems, December 1996, vol. 5 (4), Letters, June 1997, vol. 3 (3), 223-238 [0032]
256-269 [0005] • C.J. KIM ; J. Y. KIM ; B. SRIDHARAN. Comparative
• K. R. WILLIAMS ; K. GUPTA ; M. WASILIK. Etch Evaluation of Drying Techniques for Surface Mi-
Rates for Micromachining Processing - Part II. Jour- cromachining. Sensors and Actuators, 1998, vol. A
nal of Microelectromechanical Systems, December 64, 17-26 [0032]
2003, vol. 12 (6), 761-778 [0005] • L. LIN ; R. T. HOWE ; A. P. PISANO. Microelectro-
• J. BUHLERY ; F. P. STEINER ; H. BALTES. Silicon mechanical Filters for Signal Processing. Journal of
Dioxide Sacrificial Layer Etching in Surface Microma- Micromechanical Systems, September 1998, vol. 7
chining. J. Micromech. Microeng., 1997, vol. 7, (3), 286-294 [0032]
R1-R13 [0005] • J. ZOU ; C. LIU ; J. CHEN ; S. M. KANG. Develop-
• C. H. MASTRANGELO. Mechanical Stability and Ad- ment of a Wide Tuning Range MEMS Tunable Ca-
hesion of Microstructures Under Capillary Forces - pacitor for Wireless Communication Systems. IEEE
Part I: Basic Theory. Journal of Microelectromechan- IEDM, 2000, 403-406 [0032]
ical Systems, March 1993, vol. 2 (1), 33-43 [0019] • L. Lin. MEMS Post-Packaging by Localized Heating
• C. H. MASTRANGELO. Mechanical Stability and Ad- and Bonding. IEEE Transactions on Advanced Pack-
hesion of Microstructures Under Capillary Forces - aging, November 2000, vol. 23 (4), 608-616 [0032]
Part II: Experiments. Journal of Microelectromechan- • N. Hoivik ; Y. C. Lee ; V. M. Bright. Flip Chip Vari-
ical Systems, March 1993, vol. 2 (1), 44-55 [0019] able High-Q MEMS Capacitor for RF Applications,
• D. R. RIDE. Handbook of Chemistry and Physics. Proceedings of IPACK’01. The Pacific RIM/ASME In-
CRC Press, 1991 [0023] ternational Electronic Packaging Technical Confer-
• O. RACCURT ; F. TARDIF ; F. ARNAUD ence and Exhibition, 13 August 2001 [0032]
D’AVITAYA ; T. VAREINE. Influence of liquid sur- • W. I. Jang ; C. A. Choi ; M. L. Lee ; C. H. Jun ; Y.
face tension on stiction of SOI MEMS. Journal of Mi- T. Kim. Fabrication of MEMS devices by using an-
cromechanics and Microengineering, 2004, vol. 14, hydrous HF gas-phase etching with alcoholic vapor.
1083-1090 [0024] ournal of Micromechanics and Microengineering,
• J. J. SNIEGOWSKI ; C. SMITH. An Application of 2002, vol. 12, 297-306 [0032]
Mechanical Leverage to Microactuation. 8th Interna- • K. R. Williams ; R. S. Muller. Etch Rate for Microma-
tional Conference on Solid-State Sensors and Actu- chining Processing. Journal of Micromechanical Sys-
ators, and Eurosensors IX, Proc., Transdiucers ’95 tems, December 1996, vol. 5 (4), 256-294 [0037]
Eurosensors IX, 25 June 1995, vol. 2, 364-367 [0032] • A. Witvrouw ; B. Du Bois ; P. De Moor ; A. Verbist ;
• J. W. JUDY ; R. S. MULLER. Batch-Fabricated, Ad- C. Van Hoof ; H. Bender ; K. Baert. A comparison
dressable, Magnetically Actuated Microstructures. between wet HF etching and vapor HF etching for
Technical Digest, Solid-State Sensor and Actuator sacrificial oxide removal. Proc. SPIE Micromachining
Workshop, 03 June 1996 [0032] and Microfabrication Process Technology VI, Sep-
tember 2000, vol. 4174, 130-141 [0037]

52
 EP 1 700 822 B1

• K. R. Williams ; K. Gupta. Etch Rate for Microma- • J. H. LEE ; W. I. JANG ; C. S. LEE ; Y. I. LEE ; C.
chining Processing - Part II. Journal of Micromechan- A. CHOI ; J. T. BAEK ; H. J. YOO. Characterization
ical Systems, December 2003, vol. 12 (6), 761-778 of Anhydrous HF Gas-Phase Etching with CH3OH
[0037] for Sacrificial Oxide Removal. Sensors and Actua-
• C. S. Lee ; J. T. Baek ; H. J. Yoo ; S. E. Woo. Mod- tors, 1998, vol. A64, 27-32 [0050]
eling and Characterization of Gas-Phase Etching of • A. J. MUSCAT ; A. G. THORSNESS ; G. MON-
Thermal Oxide and TEOS Oxide Using Anhydrous TANO-MIRANDA. Characterization of Residues
HF and CH3OH. J. Electrochem Soc., March 1996, Formed by Anhydrous Hydrogen Fluoride Etching of
vol. 143 (3), 1099-1103 [0039] [0106] Doped Oxides. J. Vac. Sci. Technol., July 2001, vol.
• H. WATANABE ; H. KITAJIMA ; I. HONMA ; H. A19 (4), 1854-1861 [0050]
ONO ; R. J. WILHELM ; A. J. L. SOPHIE. Influence • W. I. JANG ; C. A. CHOI ; M. L. LEE ; C. H. JUN ;
of Water Adsorption/Desorption Processes on the Y. T. KIM. Fabrication of MEMS Devices by Using
Selectivity of Vapor HF Processes. J. Electrochem Anhydrous HF Gas-phase Etching With Alcoholic Va-
Soc., April 1995, vol. 142 (4), 1332-1340 [0045] por. Journal of Micromechanics and Microengineer-
• B. DU BOIS ; G. VEREECKE ; A. WLTVROUW ; P. ing, 2002, vol. 12, 297-306 [0050]
DE MOOR ; C. VAN HOOF ; A. DE • K. SHIMAOKA ; J. SAKATA. A New Full-Dry
CAUSSEMAEKER ; A. VERBIST. HF Etching of Processing Method for MEMS. R&D Review of Toy-
Si-oxides and Si-nitrides for Surface Micromachining. ota CRDL, September 2002, vol. 37 (3), 59-66 [0050]
IMEC, Kapeldreef 75 [0045] [0064] • MSDS of Ammonium Fluorosilicate. LCI,Ltd., P. O.
• A. WITVROUW ; B. DU BOIS ; P. DE MOOR ; A. Box 49000, ht-
VERBIST ; C. VAN HOOF ; H. BENDER ; K. tp://www.lciltd.com/msds%5Cmsdsasf.htm or ht-
BAERT. A comparison between wet HF etching and tp://www.flouridealert.com/pesticides/ammoni-
vapor HF etching for sacrificial oxide removal. Proc. um.fluosilicate.msds.htm [0058]
SPIE Micromachining and Microfabrication Process • R. J. MATHEWS. A Comparison of the Australia
Technology VI, September 2000, vol. 4174, 130-141 Group List of Chemical Weapon Precursors and the
[0045] CWC Schedules of Chemicals. Chemical Weapons
• M. A. LESTER. Selective Material Removal for Na- Convention Bulletin, Quarterly Journal of the Har-
nostructure Formation. Semiconductor International, vard Sussex Program on CBW Armament and Arms
01 June 2003 [0045] Limitation, September 1993, (21), 1-3 [0060]
• J. RUZYLLO ; K. TOREK ; C. DRAFFON ; R. • Handbook for Notification of Exports to Irak. SC Res-
GRANT ; R. NOVAK. Etching of Thermal Oxides in olution (1051, http://www.casi.org.uk/in-
Low Pressure Anhydrous HF/CH3OH Gas Mixtures fo/1051list/annexc.html [0060]
at Elevated Temperatures. J. Electrochem Soc., April • Revised Annex II to the Special Commission’s Plan.
1993, vol. 140 (4), L64-L66 [0050] U.N. Resolution 1409, May 2002, http://www.iraq-
• K. TOREK ; J. RUZYLLO ; R. GRANT ; R. NOVAK. watch.org/controlled/revised-annex2.htm [0060]
Reduced Pressure Etching of Thermal Oxides in An- • CANTRELL, W. ; C. MCCRORY ; G. EWING. Nu-
hydrous HF/Alcoholic Gas Mixtures. J. Electrochem cleated deliquescence of salt. J. Chem. Phys., 2002,
Soc., April 1995, vol. 142 (4), 1322-1326 [0050] vol. 116, 2116-2120 [0067]
• C. S. LEE ; J. T. BAEK ; H. J. YOO ; S. E. WOO. • MSDS of Ammonium Fluorosilicate. LCI,Ltd., P. O.
Modeling and Characterization of Gas-Phase Etch- Box 49000, ht-
ing of Thermal Oxide and TEOS Oxide Using Anhy- tp://www.lciltd.com/msds%5Cmsdsasf.htm [0099]
drous HF and CH3OH. J. Electrochem Soc., March • B. Du Bois ; G. Vereecke ; A. Wltvrouw ; P. De
1996, vol. 143 (3), 1099-1103 [0050] Moor ; C. Van Hoof ; A. De Caussemaeker ; A.
• H. H. CHUNG ; W. I. JANG ; C. S. LEE ; J. H. LEE ; Verbist. HF Etching of Si-oxides and Si-nitrides for
H. J. YOO. Gas-phase Etching of TEOS and PSG Surface Micromachining [0100]
Sacricial Layers using Anhydrous HF and CH3OH. • S. Brunauer ; P.H. Emmet ; E.Teller. Adsorption of
Journal of the Korean Physical Society, June 1997, Gases in Multimolecular Layers. J. Am. Chem. Soc.,
vol. 30 (3), 628-631 [0050] 1938, vol. 60, 309-319 [0105]
• K. Torek ; J. Ruzyllo ; R. Grant ; R. Novak. Re-
duced Pressure Etching of Thermal Oxides in Anhy-
drous HF/Alcoholic Gas Mixtures. J. Electrochem
Soc., April 1995, vol. 142 (4), 1322-1326 [0108]

53