Bridgman-Stockbarger Technique

Bridgman–Stockbarger technique
The Bridgman–Stockbarger technique is named after Harvard physicist Percy

Williams Bridgman (1882-1961) and MIT physicist Donald C. Stockbarger (1895–
Crystallization
1952). The technique includes two similar but distinct methods primarily used for
growing boules (single crystal ingots), but which can be used for solidifying
polycrystalline ingots as well.
The methods involve heating polycrystalline material above its melting point and Concepts
slowly cooling it from one end of its container, where a seed crystal is located. A
Crystallization · Crystal growth
single crystal of the same crystallographic orientation as the seed material is grown
Recrystallization · Seed crystal
on the seed and is progressively formed along the length of the container. The
Protocrystalline · Single crystal
process can be carried out in a horizontal or vertical orientation, and usually
[1] Methods and technology
involves a rotating crucible/ampoule to stir the melt.
Boules
The Bridgman method is a popular way of producing certain semiconductor crystals Bridgman–Stockbarger technique
such as gallium arsenide, for which the Czochralski process is more difficult. The Crystal bar process
process can reliably produce single crystal ingots, but does not necessarily result in Czochralski process
uniform properties through the crystal.[1] Epitaxy
Flux method
Fractional crystallization
Fractional freezing
Hydrothermal synthesis
Kyropoulos process
Laser-heated pedestal growth
Micro-pulling-down
Shaping processes in crystal
growth
Skull crucible
Verneuil process
Zone melting
Fundamentals
Nucleation · Crystal
The difference between the Bridgman[2] technique and Stockbarger[3] technique is
Crystal structure · Solid
subtle: While both methods utilize a temperature gradient and a moving crucible, the
Bridgman technique utilizes the relatively uncontrolled gradient produced at the exit
of the furnace; the Stockbarger technique introduces a baffle, or shelf, separating two coupled furnaces with temperatures above and
below the freezing point. Stockbarger's modification of the Bridgman technique allows for better control over the temperature
gradient at the melt/crystal interface.
When seed crystals are not employed as described above, polycrystalline ingots can be produced from a feedstock consisting of rods,
chunks, or any irregularly shaped pieces once they are melted and allowed to re-solidify. The resultant microstructure of the ingots so
obtained are characteristic of directionally solidified metals and alloys with their aligned grains.
A variant of the technique known as the horizontal directional solidification method or HDSM developed by Khachik Bagdasarov
starting in the 1960s in the Soviet Union uses a flat-bottomed crucible with short sidewalls rather than an enclosed ampoule, and has
been used to grow various large oxide crystals including Yb:YAG (a laser host crystal),[4] and sapphire crystals 45 cm wide and over
1 meter long.[5]
See also
Czochralski process
Float-zone silicon
Laser-heated pedestal growth
Micro-pulling-down
Zone melting
References
1. Hans J. Scheel; Peter Capper; Peter Rudolph (25 October 2010).Crystal Growth Technology: Semiconductorsand
Dielectrics (https://books.google.com/books?id=Jq9t9QE0LNwC&pg=P A177). John Wiley & Sons. pp. 177–178.
ISBN 978-3-527-32593-1.
2. Bridgman, Percy W. (1925). "Certain Physical Properties of Single Crystals of Tungsten, Antimony, Bismuth,
Tellurium, Cadmium, Zinc, and Tin". Proceedings of the American Academy of Arts and Sciences . 60 (6): 305–383.
doi:10.2307/25130058 (https://doi.org/10.2307%2F25130058). JSTOR . 25130058 . (https://www.jstor.org/stable/251
30058)
3. Stockbarger, Donald C. (1936). "The Production of Large Single Crystals of Lithium Fluoride"(https://dx.doi.org/10.1
063/1.1752094). Review of Scientific Instruments. 7 (3): 133–136. Bibcode:1936RScI....7..133S (http://adsabs.harvar
d.edu/abs/1936RScI....7..133S). doi:10.1063/1.1752094 (https://doi.org/10.1063%2F1.1752094).
4. Arzakantsyan, M.; Ananyan,, N.; Gevorgyan, V .; Chanteloup, J.-C. (2012). "Growth of large 90 mm diameter Yb:Y
AG
single crystals with Bagdasarov method".Optical Materials Express. 2 (9): 1219–1225.
5. Montgomery, Matthew; Blockburger, Clark. Zelinski, Brian J., ed. "18 x 36 x 1.5 inch sapph
ire panels for visible and
infrared windows". Proc. of SPIE. 10179 101790N-1 (Window and Dome T echnologies and Materials XV).
doi:10.1117/12.2269465 (https://doi.org/10.1117%2F12.2269465).
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Bridgman–Stockbarger technique

The Bridgman–Stockbarger technique is named after Harvard physicist Percy

Retrieved from "https://en.wikipedia.org/w/index.php?title=Bridgman–Stockbarger_technique&oldid=822974072

This page was last edited on 29 January 2018, at 16:00.

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