AP73T03GH/J-HF

Halogen-Free Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Low On-resistance D BVDSS 30V

▼ Simple Drive Requirement RDS(ON) 9mΩ
▼ Fast Switching Characteristic ID 55A
G
▼ RoHS Compliant & Halogen-Free
S

Description
Advanced Power MOSFETs from APEC provide the G
D
designer with the best combination of fast switching, □ S
TO-252(H)
ruggedized device design, low on-resistance and cost-effectiveness.

The TO-252 package is widely preferred for commercial-industrial

surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP73T03GJ) G
is available for low-profile applications. D
S TO-251(J)

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage +20 V
ID@TC=25℃ Continuous Drain Current, V GS @ 10V 55 A
ID@TC=100℃ Continuous Drain Current, V GS @ 10V 39 A
1
IDM Pulsed Drain Current 160 A
PD@TC=25℃ Total Power Dissipation 50 W
TSTG Storage Temperature Range -55 to 175 ℃
TJ Operating Junction Temperature Range -55 to 175 ℃

Thermal Data
Symbol Parameter Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 3 ℃/W
3
Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 62.5 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W

Data & specifications subject to change without notice 1

201003162
AP73T03GH/J-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V

2
VGS=10V, ID=30A - - 9 mΩ
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=20A - - 16 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=30A - 42 - S
IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
2
Qg Total Gate Charge ID=30A - 13 21 nC
Qgs Gate-Source Charge VDS=24V - 2.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 9.5 - nC
2
td(on) Turn-on Delay Time VDS=15V - 8 - ns
tr Rise Time ID=30A - 85 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 20.5 - ns
tf Fall Time RD=0.5Ω - 10 - ns
Ciss Input Capacitance VGS=0V - 700 1120 pF
Coss Output Capacitance VDS=25V - 215 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 155 - pF
Rg Gate Resistance f=1.0MHz - 1.9 - Ω

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=30A, VGS=0V - - 1.2 V
2
trr Reverse Recovery Time IS=10A, VGS=0V, - 23 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 14 - nC

Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
3.Surface mounted on 1 in 2 copper pad of FR4 board

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

2
 AP73T03GH/J-HF

160 100

10V T C =175 C
o
10V
T C =25 o C
7.0V 7.0V
6.0V 80 6.0V

ID , Drain Current (A)

ID , Drain Current (A)

120
5.0V
5.0V
60
V G =4.0V
80

V G = 4.0V 40

40

20

0 0
0 2 4 6 8 10 12 0.0 2.0 4.0 6.0 8.0

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

12 2.0

I D =20A I D =30A
11 T C =25 o C V G =10V

1.6
Normalized RDS(ON)
RDS(ON) (mΩ)

10

9 1.2
+20

0.8

6 0.4
2 4 6 8 10 -50 0 50 100 150 200

V GS , Gate-to-Source Voltage (V) o

T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
30 1.6

1.2
Normalized VGS(th) (V)

20
IS(A)

o
T j =175 C T j =25 o C
0.8

10

0.4

0 0.0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 200

V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3
AP73T03GH/J-HF

10
f=1.0MHz
1000

I D =30A
VGS , Gate to Source Voltage (V)

8 800
V DS =15V
C iss
V DS =18V
V DS =24V

C (pF)
6 600

4 400

2 200
C oss
C rss

0 0
0 4 8 12 16 20 24 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

1000 1

Duty factor = 0.5

Normalized Thermal Response (Rthjc)

100 0.2
Operation in this area
limited by RDS(ON)
ID (A)

100us 0.1

0.1
+20
0.05

PDM
10 t
1ms 0.02
T

0.01

T C =25 o C 10ms Duty Factor = t/T

Peak Tj = PDM x Rthjc + T C
Single Pulse
Single Pulse 100ms
DC
1 0.01
0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10

V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%

QG
4.5V
QGS QGD

10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform