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    2N5684 Silicon PNP Transistor High Power, High Current Switch TO 3 Type Package

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    Jalil
    The 2N5684 is a high power, high current PNP silicon transistor in a TO-3 package. It has a continuous collector current rating of 50A, with a gain of 15-60 at 25A and a saturation voltage below 1V. It is designed for use in high power amplifier and switching applications where it can handle currents up to 50A and voltages up to 80V.

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    © All Rights Reserved
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    2N5684 Silicon PNP Transistor High Power, High Current Switch TO 3 Type Package

    Uploaded by

    Jalil
    108 views2 pages
    The 2N5684 is a high power, high current PNP silicon transistor in a TO-3 package. It has a continuous collector current rating of 50A, with a gain of 15-60 at 25A and a saturation voltage below 1V. It is designed for use in high power amplifier and switching applications where it can handle currents up to 50A and voltages up to 80V.

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    2N5684 (1).pdf

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    The 2N5684 is a high power, high current PNP silicon transistor in a TO-3 package. It has a continuous collector current rating of 50A, with a gain of 15-60 at 25A and a saturation voltage below 1V. It is designed for use in high power amplifier and switching applications where it can handle currents up to 50A and voltages up to 80V.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    108 views2 pages

    2N5684 Silicon PNP Transistor High Power, High Current Switch TO 3 Type Package

    Uploaded by

    Jalil
    The 2N5684 is a high power, high current PNP silicon transistor in a TO-3 package. It has a continuous collector current rating of 50A, with a gain of 15-60 at 25A and a saturation voltage below 1V. It is designed for use in high power amplifier and switching applications where it can handle currents up to 50A and voltages up to 80V.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    2N5684

    Silicon PNP Transistor


    High Power, High Current Switch
    TO−3 Type Package

    Description:
    The 2N5684 is a PNP power transistor a TO−3 type case designed for use in high power amplifier and
    switching circuit applications.

    Features:
    D High Current Capability: IC = 50A (Continuous)
    D DC Current Gain: hFE= 15 to 60 @ IC = 25Adc
    D Low Collector−Emitter Saturation Voltage: VCE(sat) = 1V Max @ IC = 25Adc

    Absolute Maximum Ratings:


    Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
    Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
    Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
    Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A
    Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
    Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300W
    Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.715W/C
    Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
    Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
    Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.584C/W

    Electrical Characteristics: (TC = +25C unless otherwise specified)


    Parameter Symbol Test Conditions Min Typ Max Unit
    OFF Characteristics
    Collector−Emitter Sustaining Voltage VCEO(sus) IC = 0.2A, IB = 0, 80 − − V
    Collector Cutoff Current ICEO VCE = 40V, IB = 0 − − 1 mA
    ICEX VCE = 80V, VEB(off) = 1.5V − − 2 mA
    VCE = 80V, VEB(off) = 1.5V, TC = +150C − − 10 mA
    ICBO VCB = 80V, IE = 0 − − 2 mA
    Emitter Cutoff Current IEBO VBE = 5V, IC = 0 − − 5 mA
    Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)
    Parameter Symbol Test Conditions Min Typ Max Unit
    ON Characteristics
    DC Current Gain hFE IC = 25A, VCE = 2V, Note 1 15 − 60
    IC = 50A, VCE = 5V, Note 1 5 − −
    Collector−Emitter Saturation Voltage VCE(sat) IC = 25A, IB = 2.5A, Note 1 − − 1 V
    IC = 50A, IB = 10A, Note 1 − − 5 V
    Base−Emitter Saturation Voltage VBE(sat) IC = 25A, IB = 2.5A − − 2 V
    Base−Emitter ON Voltage VBE(on) IC = 25A, VCE = 2V − − 2 V
    Dynamic Characteristics
    Current Gain−Bandwidth Product fT IC = 5A, VCE = 10V, f = 1MHz 2 − − MHz
    Output Capacitance Cob VCB = 10V, IE = 0, f = 0.1MHz − − 2000 pF
    Small−Signal Current Gain hfe IC = 10A, VCE = 5V, f = 1kHz 15 − −

    Note 1. Pulse Test: Pulse Width  300s, Duty Cycle  2%.

    .135 (3.45) Max


    .350 (8.89) .875 (22.2)
    Dia Max
    Seating
    Plane

    .312 (7.93) Min .063 (1.6) Max

    Emitter 1.187 (30.16)

    .215 (5.45) .665


    (16.9)
    .156 (3.96) Dia
    (2 Holes)
    .430
    (10.92)
    .188 (4.8) R Max

    .525 (13.35) R Max


    Base Collector/Case

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