PD - 94428

AUTOMOTIVE MOSFET
IRF2805
HEXFET® Power MOSFET
Typical Applications
D
l Climate Control, ABS, Electronic Braking,
VDSS = 55V
Windshield Wipers
Features RDS(on) = 4.7mΩ
l Advanced Process Technology G
l Ultra Low On-Resistance
l 175°C Operating Temperature ID = 75A
S
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax

Description
Specifically designed for Automotive applications, this HEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of this design are
a 175°C junction operating temperature, fast switching speed and im-
proved repetitive avalanche rating . These features combine to make this
design an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications. TO-220AB

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon limited) 175
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig.9) 120 A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package limited) 75
IDM Pulsed Drain Current  700
PD @TC = 25°C Power Dissipation 330 W
Linear Derating Factor 2.2 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy‚ 450 mJ
EAS (6 sigma) Single Pulse Avalanche Energy Tested Value‡ 1220
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy† mJ
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 1.1 (10) N•m (lbf•in)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.45
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62
HEXFET(R) is a registered trademark of International Rectifier.
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IRF2805
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.06 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 3.9 4.7 mΩ VGS = 10V, ID = 104A „
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = 10V, ID = 250µA
gfs Forward Transconductance 91 ––– ––– S VDS = 25V, ID = 104A
––– ––– 20 VDS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 55V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -20V
Qg Total Gate Charge ––– 150 230 ID = 104A
Qgs Gate-to-Source Charge ––– 38 57 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– 52 78 VGS = 10V„
td(on) Turn-On Delay Time ––– 14 ––– VDD = 28V
tr Rise Time ––– 120 ––– ID = 104A
ns
td(off) Turn-Off Delay Time ––– 68 ––– RG = 2.5Ω
tf Fall Time ––– 110 ––– VGS = 10V „
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 7.5 –––
and center of die contact S

Ciss Input Capacitance ––– 5110 ––– VGS = 0V

Coss Output Capacitance ––– 1190 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 210 ––– ƒ = 1.0MHz, See Fig. 5
Coss Output Capacitance ––– 6470 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 860 ––– VGS = 0V, VDS = 44V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance … ––– 1600 ––– VGS = 0V, VDS = 0V to 44V

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 175
(Body Diode) showing the
A
I SM Pulsed Source Current integral reverse G

––– ––– 700

(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 104A, VGS = 0V „
t rr Reverse Recovery Time ––– 80 120 ns TJ = 25°C, IF = 104A
Q rr Reverse Recovery Charge ––– 290 430 nC di/dt = 100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes: … Coss eff. is a fixed capacitance that gives the same charging time
 Repetitive rating; pulse width limited by as Coss while VDS is rising from 0 to 80% VDSS .
max. junction temperature. (See fig. 11).
† Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
‚ Starting TJ = 25°C, L = 0.08mH
RG = 25Ω, IAS = 104A. (See Figure 12). avalanche performance.
ƒ ISD ≤ 104A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS, ‡ This value determined from sample failure population. 100%
TJ ≤ 175°C tested to this value in production.
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.

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 IRF2805

1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
100 5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V

4.5V
100
4.5V

10

20µs PULSE WIDTH 20µs PULSE WIDTH

Tj = 25°C Tj = 175°C
1 10
0.1 1 10 100 0.1 1 10 100
VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 200
T J = 25°C
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current (A)

T J = 175°C 160
T J = 175°C

120
100
T J = 25°C
80

40
VDS = 25V VDS = 25V
20µs PULSE WIDTH 20µs PULSE WIDTH
10 0
4.0 5.0 6.0 7.0 8.0 9.0 10.0 0 40 80 120 160 200
VGS , Gate-to-Source Voltage (V) ID, Drain-to-Source Current (A)

Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance

Vs. Drain Current
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IRF2805

10000 20
VGS = 0V, f = 1 MHZ
ID= 104A VDS= 44V
C iss = C gs + C gd , C ds
VDS= 28V

VGS , Gate-to-Source Voltage (V)

SHORTED
8000 Crss = Cgd
16
Coss = Cds + Cgd
C, Capacitance (pF)

6000 12
Ciss

4000
8

4
2000
Coss

Crss 0
0
0 40 80 120 160 200 240
1 10 100
Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000.0 10000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
ID, Drain-to-Source Current (A)

T J = 175°C
ISD, Reverse Drain Current (A)

100.0 1000

10.0 100
100µsec

TJ = 25°C 1msec
1.0 10
Tc = 25°C
10msec
Tj = 175°C
VGS = 0V Single Pulse
0.1 1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 10 100 1000
VSD, Source-toDrain Voltage (V) VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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 IRF2805

180 3.0
I D = 175A
LIMITED BY PACKAGE

150 2.5

RDS(on) , Drain-to-Source On Resistance

120 2.0
ID , Drain Current (A)

(Normalized)
90 1.5

60 1.0

30 0.5

V GS = 10V
0 0.0
25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

TC , Case Temperature ( °C) TJ , Junction Temperature ( ° C)

Fig 9. Maximum Drain Current Vs. Fig 10. Normalized On-Resistance

Case Temperature Vs. Temperature

1
(Z thJC )

D = 0.50

0.1 0.20

0.10
Thermal Response

0.05

0.02 SINGLE PULSE

0.01 (THERMAL RESPONSE)
P DM

0.01
t1

t2

Notes:
1. Duty factor D = t1/ t 2
2. Peak T J = P DM x Z thJC +T C
0.001
0.00001 0.0001 0.001 0.01 0.1

t 1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF2805

1000
15V ID
TOP 43A
87A
800 BOTTOM 104A
L DRIVER
VDS

EAS , Single Pulse Avalanche Energy (mJ)

RG D.U.T + 600
V
- DD
IAS A
20V
VGS
tp 0.01Ω
400

Fig 12a. Unclamped Inductive Test Circuit

V(BR)DSS
200
tp

0
25 50 75 100 125 150 175

Starting Tj, Junction Temperature ( ° C)

I AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
QG

10 V
QGS QGD 4.0
VGS(th) Gate threshold Voltage (V)

VG
ID = 250µA

3.0
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
2.0
50KΩ

12V .2µF
.3µF

+
V
D.U.T. - DS
1.0
VGS -75 -50 -25 0 25 50 75 100 125 150 175
3mA T J , Temperature ( °C )

IG ID
Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage Vs. Temperature
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 IRF2805

10000

Duty Cycle = Single Pulse

1000 Allowed avalanche Current vs
Avalanche Current (A)

avalanche pulsewidth, tav

assuming ∆ Tj = 25°C due to
avalanche losses. Note: In no
0.01
100 case should Tj be allowed to
exceed Tjmax
0.05
0.10
10

1
1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

500 Notes on Repetitive Avalanche Curves , Figures 15, 16:

T OP Single Pulse (For further info, see AN-1005 at www.irf.com)
BOTT OM 10% Duty Cycle 1. Avalanche failures assumption:
ID = 104A Purely a thermal phenomenon and failure occurs at a
EAR , Avalanche Energy (mJ)

400
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
300 not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
200 4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
100
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
T jmax (assumed as 25°C in Figure 15, 16).
0 tav = Average time in avalanche.
25 50 75 100 125 150 175 D = Duty cycle in avalanche = tav ·f
Starting TJ , Junction Temperature (°C) ZthJC(D, tav ) = Transient thermal resistance, see figure 11)

PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC

Fig 16. Maximum Avalanche Energy Iav = 2DT/ [1.3·BV·Zth]
Vs. Temperature EAS (AR) = PD (ave)·t av
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IRF2805

Driver Gate Drive

D.U.T P.W.
Period D=
P.W.
Period
+

ƒ
*
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚
-
„ +
Recovery
Current
Body Diode Forward
Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG • dv/dt controlled by RG V DD Re-Applied

• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
• I SD controlled by Duty Factor "D" - Inductor Curent
• D.U.T. - Device Under Test

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs

RD
V DS

VGS
D.U.T.
RG
+
-V DD

10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

VDS
90%

10%
VGS
td(on) tr t d(off) tf

Fig 18b. Switching Time Waveforms

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 IRF2805

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)
10.54 (.415) 3.78 (.149) -B-
2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)
2.62 (.103) 4.20 (.165)
-A- 1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045) LEAD ASSIGNMENTS
MIN 1 - GATE
1 2 3 2 - DRAIN
3 - SOURCE
4 - DRAIN
14.09 (.555)
13.47 (.530) 4.06 (.160)
3.55 (.140)

0.93 (.037) 0.55 (.022)

3X 3X
0.69 (.027) 0.46 (.018)
1.40 (.055)
3X
1.15 (.045) 0.36 (.014) M B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

TO-220AB Part Marking Information

EXAMPLE: T HIS IS AN IRF1010 PART NUMBER
LOT CODE 1789 INT ERNATIONAL
RECTIFIER
AS SEMBLED ON WW 19, 1997
LOGO
IN THE AS SEMBLY LINE "C"
DAT E CODE
YEAR 7 = 1997
AS SEMBLY
LOT CODE WEEK 19
LINE C

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 8/02
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/