Microwave Engineering Assignment 1 To 5

MICROWAVE ENGINEERING
III ECE A & B

ASSIGNMENT 1
Answer any two questions
1. Derive field expression for TM waves in rectangular waveguides.
2. Derive an expression for attenuation factor for TE 10.
3. Derive field expression for TE waves in circular waveguide.
4. Derive expression for phase constant, cut off frequency, cut off wavelength, phase velocity,
group velocity and wave impedance for rectangular waveguide.
5. Explain initial methods in rectangular waveguide.
6. Find the width for a 50 ohm copper strip line conductor, with b=0.32cm and ℇ r =2.20. if the
dielectric loss tangent is 0.001 and the operating frequency is 10 GHz. Calculate the
attenuation in dB/λ. Assume a conductor thickness of t=0.01 mm.
7. Calculate the width and the length of a microstrip line for a 50 ohm characteristics
impedance and a 90 degree phase shift at 2.5 GHz. Thus substrate thickness is d=0.127 cm
and with ℇ r =2.2.
8. A X-Band waveguide with dimensions 2.286 X 1.016 cm has a cut-off frequency of
6.56 GHz for the dominant mode. Calculate the phase and group velocities at signal
frequencies of 8, 10 and 12 GHz.
9. For an air-filled waveguide with a=2b=2.5 cm and operating at 20 GHz. Calculate the
phase velocity and guide wavelength for the TE11 and TE21 modes.
10. A rectangular waveguide is filled with polyethylene as dielectric with ℇr=2.25 and
operates at 24 GHz. If the cut-off frequency of a certain TE mode is 16 GHz, find the
group velocity and intrinsic wave impedance of the mode.
III ECE A & B
ASSIGNMENT 2
1. Obtain condition for lossless networks in Z parameters.
2. Obtain Z parameters for following circuit
3. Find S parameters for following circuits
Assume that the circuit is fed by a line with Z 0 of 50 Ohm

4. Obtain condition for reciprocity in terms of S parameters.
5. Obtain condition for loss lessness in terms of S parameters.
6. A two-port network is having following S matrix
0.15∠ 0o 0.85∠−45o
[
[ S ]=
0.85∠ 45o 0.2∠0 o ]
Determine if the network is reciprocal and lossless if port two is terminated with a method
load, what is the return loss sum at port 1? If port two is terminated with a short circuit,
what is the return loss sum at port 1?
7. Explain operation of E plane tee and derive S matrix.
8. Explain operation of H plane tee and derive S matrix.
9. Explain operation of magic tee and derive S matrix.
10. Explain operation of directional coupler and derive S matrix.
11. Explain circulators and ferrite isolators.
III ECE A & B
ASSIGNMENT 3
1. Explain insertion loss method of designing Chebyshev filter.
2. Explain insertion loss method of designing butter-worth filter.
3. Explain general procedure of designing and implementing microwave filters.
4. Explain transformation to low pass filter at microwave frequencies with example and
suitable expression.
5. Explain transformation to high pass filter at microwave frequencies with example and
6. Explain transformation to band pass filter at microwave frequencies with example and
7. Explain transformation to band stop filter at microwave frequencies with example and
8. Design an L network to match a 100 ohm source to a 1000 ohm load at 100 MHz. assume
that a dc voltage must also be transferred from the source to the load.
9. Explain L network matching with suitable example.
10. Use the absorption approach to match the source and load shown in figure below. (100
MHz)
11. Explain absorption method of the impedance matching with suitable example.
12. Explain Pi-network matching with suitable example.
13. Explain T network matching with a suitable example.
14. Explain resonance method of a matching with suitable example.
15. Explain wideband matching.
16. Design an impedance matching network that will block the flow of DC from the source to
the load in following figure.
17. Design four Pi networks to match a 100 ohm source to a 1000 ohm load. Each network must
have a loaded Q of 15.
18. Design four different T port networks to match a 10 ohm source to a 50 ohm load. Each
network must have a loaded Q of 10.
III ECE A & B
ASSIGNMENT 4
1.Explain the concept of velocity modulation in two cavity klystron, derive

an expression for bunching parameter.
2. Derive an expression for distance at which bunching takes place in a two
cavity klystron.
3. Draw and explain working of a reflex klystron.
4. Draw and explain working of the TWT.
5. Draw and explain working of a magnetron. Derive an expression for hull
cut-off.
6. What is mode jumping in magnetrons and explain remedial measures to
overcome it.
7. Write short notes on AvalancheTransitTimeDevices.
8. A helical TWT has diameter of 2 mm with 50 turns per cm. Calculate
axial phase
velocity and the anode voltage at which the TWT can operated for
useful gain.
9. Draw and explain the schematic and working of TRAPATT diode.
10. Draw and explain the schematic and working of IMPATT diode.
11. Explain the various modes of operation of GUNN diode.
12. Draw and explain the schematic and working of TUNNEL diode.
III ECE A & B
ASSIGNMENT 5
1. Explain a method of noise temperature measurement.
2. An X band amplifier has a gain of 20 dB and a 1 GHz bandwidth. Its equivalent noise
temperature is to be measured via the y factor method. The following data is
obtained.
For T1=290 K, N1=-62.0 dBm
For T2=77 K, N2 = -64.7 dBm
Determine the equivalent noise temperature of the amplifier. If the amplifier is used
with a source having an equivalent noise temperature of T3 = 450 K. what is the
output noise power in dBm.
3. Explain the concept of gain compression.
4. Explain intra modulation distortion.
5. Explain oscillator phase noise.
6. Derive manley-rowe relation.
7. Explain resistive diode multipliers.
8. Find the noise figure of Wilkinson Power Divider.
9. The IS-54 digital cellular telephone system uses a receive frequency band of 869–
894 MHz, with a first IF frequency of 87 MHz and a channel bandwidth of 30 KHz.
What are the two possible ranges for the LO frequency? If the upper LO frequency
range is used, determine the image frequency range. Does the image frequency fall
within the receive passband?
10. Explain single ended diode mixer.
11. Explained Balanced mixer.

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MICROWAVE ENGINEERING

III ECE A & B

2. Obtain Z parameters for following circuit

3. Find S parameters for following circuits

Assume that the circuit is fed by a line with Z 0 of 50 Ohm

1.Explain the concept of velocity modulation in two cavity klystron, derive

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