PD - 94381E

IRGB6B60KD
IRGS6B60KD
INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL6B60KD
ULTRAFAST SOFT RECOVERY DIODE
C
Features VCES = 600V
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF. IC = 7.0A, TC=100°C
• 10µs Short Circuit Capability.
• Square RBSOA.
G
• Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10µs, TJ=150°C
• Positive VCE (on) Temperature Coefficient.
E
n-channel VCE(on) typ. = 1.8V
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.

TO-220AB D2Pak TO-262

IRGB6B60KD IRGS6B60KD IRGSL6B60KD
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 13
IC @ TC = 100°C Continuous Collector Current 7.0
ICM Pulsed Collector Current 26
ILM Clamped Inductive Load Current„ 26 A
IF @ TC = 25°C Diode Continuous Forward Current 13
IF @ TC = 100°C Diode Continuous Forward Current 7.0
IFM Diode Maximum Forward Current 26
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 90
W
PD @ TC = 100°C Maximum Power Dissipation 36
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– ––– 1.4
RθJC Junction-to-Case - Diode ––– ––– 4.4
RθCS Case-to-Sink, flat, greased surface ––– 0.50 ––– °C/W
RθJA Junction-to-Ambient, typical socket mount ––– ––– 62
RθJA Junction-to-Ambient (PCB Mount, steady state)‚ ––– ––– 40
Wt Weight ––– 1.44 ––– g

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IRG/B/S/SL6B60KD

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Ref.Fig.
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 500µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.3 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-150°C)
VCE(on) Collector-to-Emitter Saturation Voltage 1.5 1.80 2.20 V IC = 5.0A, VGE = 15V 5, 6,7
––– 2.20 2.50 IC = 5.0A,VGE = 15V, TJ = 150°C 9,10,11
VGE(th) Gate Threshold Voltage 3.5 4.5 5.5 V VCE = VGE, IC = 250µA 9,10,11
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C) 12
gfe Forward Transconductance ––– 3.0 ––– S VCE = 50V, IC = 5.0A, PW=80µs
ICES Zero Gate Voltage Collector Current ––– 1.0 150 µA VGE = 0V, VCE = 600V
––– 200 500 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop ––– 1.25 1.45 IC = 5.0A
8
––– 1.20 1.40 V IC = 5.0A TJ = 150°C
IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ.
Max. Units Conditions Ref.Fig.

Qg Total Gate Charge (turn-on) ––– 18.2

––– IC = 5.0A
Qge Gate - Emitter Charge (turn-on) ––– 1.9
––– nC VCC = 400V CT1
Qgc Gate - Collector Charge (turn-on) ––– 9.2
––– VGE = 15V
Eon Turn-On Switching Loss ––– 110210 µJ IC = 5.0A, VCC = 400V CT4
Eoff Turn-Off Switching Loss ––– 135245 VGE = 15V,R G = 100Ω, L =1.4mH
Etot Total Switching Loss ––– 245455 Ls = 150nH TJ = 25°C ƒ
td(on) Turn-On Delay Time ––– 25 34 IC = 5.0A, VCC = 400V CT4
tr Rise Time ––– 17 26 VGE = 15V, RG = 100Ω L =1.4mH
td(off) Turn-Off Delay Time ––– 215230 ns Ls = 150nH, TJ = 25°C
tf Fall Time ––– 13.222
Eon Turn-On Switching Loss ––– 150260 IC = 5.0A, VCC = 400V CT4
Eoff Turn-Off Switching Loss ––– 190300 µJ VGE = 15V,R G = 100Ω, L =1.4mH 13,15
Etot Total Switching Loss ––– 340560 Ls = 150nH TJ = 150°C ƒ WF1WF2

td(on) Turn-On Delay Time ––– 28 37 IC = 5.0A, VCC = 400V 14, 16

tr Rise Time ––– 17 26 VGE = 15V, RG = 100Ω L =1.4mH CT4
td(off) Turn-Off Delay Time ––– 240255 ns Ls = 150nH, TJ = 150°C WF1
tf Fall Time ––– 18 27 WF2
Cies Input Capacitance ––– 290––– VGE = 0V
Coes Output Capacitance ––– 34––– pF VCC = 30V
Cres Reverse Transfer Capacitance ––– 10––– f = 1.0MHz
TJ = 150°C, IC = 26A, Vp =600V 4
RBSOA Reverse Bias Safe Operting Area FULL SQUARE
VCC = 500V, VGE = +15V to 0V,RG = 100Ω CT2
µs TJ = 150°C, Vp =600V, RG = 100Ω CT3
SCSOA Short Circuit Safe Operting Area 10 ––– –––
VCC = 360V, VGE = +15V to 0V WF4
17,18,19
Erec Reverse Recovery energy of the diode ––– 90 175 µJ TJ = 150°C
trr Diode Reverse Recovery time ––– 70 80 ns VCC = 400V, IF = 5.0A, L = 1.4mH 20, 21
Irr Diode Peak Reverse Recovery Current ––– 10 14 A VGE = 15V,RG = 100Ω, Ls = 150nH CT4,WF3

Note:  to „ are on page 15

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 IRG/B/S/SL6B60KD

15 100
90
80
70
10
60

Ptot (W)
IC (A)

50
40
5
30
20
10
0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
T C (°C) T C (°C)

Fig. 1 - Maximum DC Collector Current vs. Fig. 2 - Power Dissipation vs. Case
Case Temperature Temperature

100 100

10 10
10 µs
IC (A)

IC A)

1 1
100 µs
DC
1ms

0.1 0
1 10 100 1000 10000 10 100 1000
VCE (V) VCE (V)

Fig. 3 - Forward SOA Fig. 4 - Reverse Bias SOA

TC = 25°C; TJ ≤ 150°C TJ = 150°C; VGE =15V
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IRG/B/S/SL6B60KD
20 20
18 VGE = 18V 18 VGE = 18V
16 VGE = 15V 16 VGE = 15V
VGE = 12V VGE = 12V
14 VGE = 10V 14 VGE = 10V
VGE = 8.0V VGE = 8.0V
12 12
ICE (A)

ICE (A)
10 10
8 8
6 6
4 4
2 2
0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6
VCE (V) VCE (V)

Fig. 5 - Typ. IGBT Output Characteristics Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs TJ = 25°C; tp = 80µs

20 30
18 VGE = 18V
-40°C
16 VGE = 15V 25 25°C
VGE = 12V 150°C
14 VGE = 10V
VGE = 8.0V 20
12
ICE (A)

IF (A)

10 15
8
6 10

4
5
2
0 0
0 1 2 3 4 5 6 0.0 0.5 1.0 1.5 2.0
VCE (V) VF (V)

Fig. 7 - Typ. IGBT Output Characteristics Fig. 8 - Typ. Diode Forward Characteristics
TJ = 150°C; tp = 80µs tp = 80µs
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 IRG/B/S/SL6B60KD
20 20
18 18
16 16
14 14
12 ICE = 3.0A 12 ICE = 3.0A
VCE (V)

VCE (V)
10 ICE = 5.0A 10 ICE = 5.0A
ICE = 10A ICE = 10A
8 8
6 6
4 4
2 2
0 0
5 10 15 20 5 10 15 20
VGE (V) VGE (V)

Fig. 9 - Typical VCE vs. VGE Fig. 10 - Typical VCE vs. VGE
TJ = -40°C TJ = 25°C

20 40

18 35 T J = 25°C
16 T J = 150°C
30
14
12 25
ICE = 3.0A
VCE (V)

ICE (A)

10 ICE = 5.0A 20
ICE = 10A
8
15
6
10
4 T J = 150°C
2 5 T J = 25°C
0
0
5 10 15 20
0 5 10 15 20
VGE (V)
VGE (V)

Fig. 11 - Typical VCE vs. VGE Fig. 12 - Typ. Transfer Characteristics

TJ = 150°C VCE = 50V; tp = 10µs
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IRG/B/S/SL6B60KD
700 1000

600 tdOFF

500 EON

Swiching Time (ns)

100
Energy (µJ)

400
tF
300 EOFF tdON

10 tR
200

100

0
1
0 5 10 15 20
0 5 10 15 20
IC (A)
IC (A)

Fig. 13 - Typ. Energy Loss vs. IC Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L=1.4mH; VCE= 400V TJ = 150°C; L=1.4mH; VCE= 400V
RG= 100Ω; VGE= 15V RG= 100Ω; VGE= 15V

250 1000

tdOFF
EOFF
200
Swiching Time (ns)

100
Energy (µJ)

150

EON tdON
tR
100
tF
10

50

0 1
0 50 100 150 200 0 50 100 150 200

R G (Ω) RG (Ω)

Fig. 15 - Typ. Energy Loss vs. RG Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L=1.4mH; VCE= 400V TJ = 150°C; L=1.4mH; VCE= 400V
ICE= 5.0A; VGE= 15V ICE= 5.0A; VGE= 15V
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 IRG/B/S/SL6B60KD
25 20

RG = 22 Ω
20 16

RG = 47 Ω
15 12

IRR (A)
IRR (A)

RG = 100 Ω
10 8

RG = 150 Ω

5 4

0 0
0 5 10 15 20 0 50 100 150 200

IF (A) RG (Ω)

Fig. 17 - Typical Diode IRR vs. IF Fig. 18 - Typical Diode IRR vs. RG
TJ = 150°C TJ = 150°C; IF = 5.0A

20 1200

1000 22Ω
16
10A
800 47Ω
100 Ω
Q RR (µC)

12
IRR (A)

600 150Ω 5.0A

8
400 3.0A

4 200

0
0
0 200 400 600 800 1000
0 200 400 600 800 1000
diF /dt (A/µs)
diF /dt (A/µs)

Fig. 19- Typical Diode IRR vs. diF/dt Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V; VCC= 400V; VGE= 15V;TJ = 150°C
ICE= 5.0A; TJ = 150°C
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IRG/B/S/SL6B60KD
300
22Ω

250
Energy (µJ)

200

47Ω
150

100 Ω
100

150 Ω
50
0 5 10 15

IF (A)

Fig. 21 - Typical Diode ERR vs. IF

TJ = 150°C

1000 16

Cies 14
300V
12
400V
Capacitance (pF)

100 10
VGE (V)

Coes
8

Cres 6
10
4

0
1
0 5 10 15 20
1 10 100
Q G , Total Gate Charge (nC)
VCE (V)

Fig. 22- Typ. Capacitance vs. VCE Fig. 23 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz ICE = 5.0A; L = 600µH
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 IRG/B/S/SL6B60KD
10
Thermal Response ( Z thJC )

1
D = 0.50

0.20
Ri (°C/W) τi (sec)
R1 R2 R3
R1 R2 R3
0.10 τJ τC 0.708 0.00022
0.1 τJ τ
0.05
τ1 τ2 τ3
τ1 τ2 τ3 0.447 0.00089
0.01
0.02 Ci= τi/Ri 0.219 0.01037
Ci= i/Ri
0.01
SINGLE PULSE Notes:
( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-6 1E-5 1E-4 1E-3 1E-2 1E-1

t1 , Rectangular Pulse Duration (sec)

Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10

D = 0.50
Thermal Response ( Z thJC )

1 0.20
0.10
0.05 R1 R2 R3
Ri (°C/W) τi (sec)
R1 R2 R3
τJ τC
0.1 0.01 τJ 1.194 0.000172
τ
0.02 τ1 τ2 τ3
τ1 τ2 τ3 2.424 0.001517
Ci= τi/Ri 0.753 0.080325
Ci= i/Ri
0.01 SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0

t1 , Rectangular Pulse Duration (sec)

Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

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IRG/B/S/SL6B60KD
L

L
VCC 80 V +
DUT DUT
0 - 480V
Rg
1K

Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

diode clamp /
DUT
Driver L

- 5V
DC 360V DUT /
DRIVER VCC
DUT Rg

Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit

VCC
R=
ICM

DUT VCC
Rg

Fig.C.T.5 - Resistive Load Circuit

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 IRG/B/S/SL6B60KD
450 9 500 25

400 8
400 20
350 7
90% ICE
300 6
300 15
TEST CURRENT
250 5
VCE (V)

tf

VCE (V)
I CE (A)

ICE (A)
200 4 200 10
90% test current
150 3
5% V CE
100 5
100 2 10% test current
5% ICE tr 5% V CE
50 1
0 0
0 0
Eon Loss
Eof f Loss
-50 -1 -100 -5
-0.20 0.30 0.80 16.00 16.10 16.20 16.30 16.40
time(µs) time (µs)
Fig. WF1- Typ. Turn-off Loss Waveform Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4 @ TJ = 150°C using Fig. CT.4

50 8 500 50

0 6
QR R
-50 4 400 40
t RR
-100 2 VC E

300 IC E 30
-150 0
VCE (V)

ICE (A)
V F (V)

IF (A)

-200 -2
Peak 10% 200 20
-250 -4
IRR Peak
IRR
-300 -6

-350 -8 100 10

-400 -10

-450 -12 0 0
-0.06 0.04 0.14 0.24 -5.00 0.00 5.00 10.00 15.00

time (µS) time (µS)

Fig. WF3- Typ. Diode Recovery Waveform Fig. WF4- Typ. S.C Waveform
@ TJ = 150°C using Fig. CT.4 @ TJ = 150°C using Fig. CT.3
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IRG/B/S/SL6B60KD

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

10.54 (.415) 3.78 (.149) -B-

2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)
2.62 (.103) 4.20 (.165)
-A- 1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045) LEAD ASSIGNMENTS
MIN HEXFET
1 - GATE
IGBTs, CoPACK
1 2 3 2 - DRAIN
1- GATE 1- GATE
3 - SOURCE
2- DRAIN 2- COLLECTOR
3- SOURCE
4 - DRAIN 3- EMITTER
4- DRAIN 4- COLLECTOR
14.09 (.555)
13.47 (.530) 4.06 (.160)
3.55 (.140)

0.93 (.037) 0.55 (.022)

3X 3X
0.69 (.027) 0.46 (.018)
1.40 (.055)
3X
1.15 (.045) 0.36 (.014) M B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

TO-220AB Part Marking Information

E XAMP L E : T HIS IS AN IR F 1010

L OT CODE 1789
AS S E MB L E D ON WW 19, 1997 INT E R NAT IONAL PAR T NU MB E R
IN T H E AS S E MB L Y L INE "C" R E CT IF IE R
L OGO
Note: "P" in assembly line
position indicates "Lead-Free" DAT E CODE
YE AR 7 = 1997
AS S E MB L Y
L OT CODE WE E K 19
L INE C

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 IRG/B/S/SL6B60KD
D2Pak Package Outline
Dimensions are shown in millimeters (inches)

D2Pak Part Marking Information

THIS IS AN IRF530S WIT H PART NUMBER
LOT CODE 8024 INT ERNAT IONAL
AS S EMBLE D ON WW 02, 2000 R ECTIFIER F530S
IN T HE AS S EMBL Y LINE "L" LOGO
DAT E CODE
Note: "P" in as sembly line YEAR 0 = 2000
pos ition indicates "L ead-F ree" AS S EMBLY
L OT CODE WE EK 02
LINE L

OR
PART NUMBE R
INT E RNAT IONAL
RE CT IF IER F 530S
LOGO
DAT E CODE
P = DE SIGNAT ES LE AD-F RE E
AS S EMBLY PRODUCT (OPT IONAL)
LOT CODE YEAR 0 = 2000
WE EK 02
A = AS SE MBLY SIT E CODE

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IRG/B/S/SL6B60KD
TO-262 Package Outline
Dimensions are shown in millimeters (inches)

TO-262 Part Marking Information

E XAMPLE : T HIS IS AN IRL 3103L
L OT CODE 1789 PART NUMBE R
INT E RNAT IONAL
AS S EMB L ED ON WW 19, 1997
RE CT IF IER
IN TH E AS S E MBL Y L INE "C" LOGO
Note: "P" in ass embly line DAT E CODE
pos ition indicates "Lead-Free" YE AR 7 = 1997
AS S E MB LY
L OT CODE WE E K 19
LINE C

OR
PART NUMBE R
INT E RNAT IONAL
RE CT IF IER
L OGO
DAT E CODE
P = DES IGNAT E S LE AD-F REE
AS S E MB LY PRODUCT (OPTIONAL)
LOT CODE YE AR 7 = 1997
WEE K 19
A = AS S EMB L Y S ITE CODE

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 IRG/B/S/SL6B60KD
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR

1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161) 1.50 (.059)
3.90 (.153) 0.368 (.0145)
0.342 (.0135)

FEED DIRECTION 1.85 (.073) 11.60 (.457)

1.65 (.065) 11.40 (.449) 24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)

FEED DIRECTION

13.50 (.532) 27.40 (1.079)

12.80 (.504) 23.90 (.941)

330.00 60.00 (2.362)

(14.173) MIN.
MAX.

30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

Notes:
 This is only applied to TO-220AB package
‚ This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ƒ Energy losses include "tail" and diode reverse recovery.
„ VCC = 80% (VCES), VGE = 20V, L = 100 µH, RG = 100Ω.

TO-220 package is not recommended for Surface Mount Application

Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 08/04
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/