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    2SB817C/2SD1047C: 140V / 12A, AF 80W Output Applications

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    Elec Thaihoa
    This document provides specifications for the 2SB817C/2SD1047C PNP Epitaxial Planar Silicon Transistor and NPN Triple Diffused Planar Silicon Transistor. It lists the features, package dimensions, absolute maximum ratings, electrical characteristics, and switching time test circuit details for these transistors that are suitable for 140V/12A AF 80W output applications. Key specifications include a current capacity of 12A continuous or 20A pulse, a breakdown voltage of 160V collector-base and 140V collector-emitter, and switching times below 1 microsecond.

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    2SB817C/2SD1047C: 140V / 12A, AF 80W Output Applications

    Uploaded by

    Elec Thaihoa
    44 views2 pages
    This document provides specifications for the 2SB817C/2SD1047C PNP Epitaxial Planar Silicon Transistor and NPN Triple Diffused Planar Silicon Transistor. It lists the features, package dimensions, absolute maximum ratings, electrical characteristics, and switching time test circuit details for these transistors that are suitable for 140V/12A AF 80W output applications. Key specifications include a current capacity of 12A continuous or 20A pulse, a breakdown voltage of 160V collector-base and 140V collector-emitter, and switching times below 1 microsecond.

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    2SD1047C.pdf

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    This document provides specifications for the 2SB817C/2SD1047C PNP Epitaxial Planar Silicon Transistor and NPN Triple Diffused Planar Silicon Transistor. It lists the features, package dimensions, absolute maximum ratings, electrical characteristics, and switching time test circuit details for these transistors that are suitable for 140V/12A AF 80W output applications. Key specifications include a current capacity of 12A continuous or 20A pulse, a breakdown voltage of 160V collector-base and 140V collector-emitter, and switching times below 1 microsecond.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    44 views2 pages

    2SB817C/2SD1047C: 140V / 12A, AF 80W Output Applications

    Uploaded by

    Elec Thaihoa
    This document provides specifications for the 2SB817C/2SD1047C PNP Epitaxial Planar Silicon Transistor and NPN Triple Diffused Planar Silicon Transistor. It lists the features, package dimensions, absolute maximum ratings, electrical characteristics, and switching time test circuit details for these transistors that are suitable for 140V/12A AF 80W output applications. Key specifications include a current capacity of 12A continuous or 20A pulse, a breakdown voltage of 160V collector-base and 140V collector-emitter, and switching times below 1 microsecond.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    Ordering number : ENN6987

    2SB817C/2SD1047C PNP Epitaxial Planar Silicon Transistor


    NPN Triple Diffused Planar Silicon Transistor

    2SB817C/2SD1047C

    140V / 12A, AF 80W Output Applications

    Features Package Dimensions


    • Large current capacitance. unit : mm
    • Wide ASO and high durability against breakdown. 2022A
    • Adoption of MBIT process.
    [2SB817C/2SD1047C]
    15.6 3.2 4.8
    14.0 2.0

    3.5
    2.6

    20.0
    1.2
    15.0
    1.3
    1.6
    2.0

    20.0
    0.6
    1.0

    1 2 3 1 : Base
    0.6
    2 : Collector

    1.4
    3 : Emitter
    Specifications
    5.45 5.45 SANYO : TO-3PB
    ( ) : 2SB817C
    Absolute Maximum Ratings at Ta=25°C
    Parameter Symbol Conditions Ratings Unit
    Collector-to-Base Voltage VCBO (--)160 V
    Collector-to-Emitter Voltage VCEO (--)140 V
    Emitter-to-Base Voltage VEBO (--)6 V
    Collector Current IC (--)12 A
    Collector Current (Pulse) ICP (--)20 A
    2.5 W
    Collector Dissipation PC
    Tc=25°C 120 W
    Junction Temperature Tj 150 °C
    Storage Temperature Tstg --55 to +150 °C

    Electrical Characteristics at Ta=25°C


    Ratings
    Parameter Symbol Conditions Unit
    min typ max
    Collector Cutoff Current ICBO VCB=(--)160V, IE=0 (--)0.1 mA
    Emitter Cutoff Current IEBO VEB=(--)4V, IC=0 (--)0.1 mA
    hFE1 VCE=(--)5V, IC=(--)1A 100 200
    DC Current Gain
    hFE2 VCE=(--)5V, IC=(--)5A 35
    Continued on next page.

    Any and all SANYO products described or contained herein do not have specifications that can handle
    applications that require extremely high levels of reliability, such as life-support systems, aircraft's
    control systems, or other applications whose failure can be reasonably expected to result in serious
    physical and/or material damage. Consult with your SANYO representative nearest you before using
    any SANYO products described or contained herein in such applications.
    SANYO assumes no responsibility for equipment failures that result from using products at values that
    exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
    parameters) listed in products specifications of any and all SANYO products described or contained
    herein.

    SANYO Electric Co.,Ltd. Semiconductor Company


    TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
    HD 030710DA SAWADA No.0000-1/2
    2SB817C/2SD1047C

    Continued from preceding page.


    Ratings
    Parameter Symbol Conditions Unit
    min typ max
    Gain-Bandwidth Product fT VCE=(--)5V, IC=(--)1A (10)15 MHz
    Output Capacitance Cob VCB=(--)10V, f=1MHz (280)140 pF
    Base-to-Emitter Voltage VBE VCE=(--)5A, IC=(--)5A 1.5 V
    Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)5A, IB=(--)0.5A (-- 0.3)0.2 (--)2.0 V
    Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)5mA, IE=0 (--)160 V
    Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)50mA, RBE=∞ (--)140 V
    Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)5mA, IC=0 (--)6 V
    Turn-On Time ton See specified Test Circuit. (0.45)0.56 µs
    Storage Time tstg See specified Test Circuit. (1.75)3.3 µs
    Fall Time tf See specified Test Circuit. (0.25)0.4 µs

    Switching Time Test Circuit

    IB1
    PW=20µs
    OUTPUT
    D.C.≤1% IB2

    INPUT RB
    VR RL=
    10Ω
    50Ω + +

    100µF 470µF

    VBE= --2V VCC=50V

    IC=10IB1= --10IB2=5A
    For PNP, the polarity is reversed.

    Specifications of any and all SANYO products described or contained herein stipulate the performance,
    characteristics, and functions of the described products in the independent state, and are not guarantees
    of the performance, characteristics, and functions of the described products as mounted in the customer's
    products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
    the customer should always evaluate and test devices mounted in the customer's products or equipment.
    SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
    semiconductor products fail with some probability. It is possible that these probabilistic failures could
    give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
    or that could cause damage to other property. When designing equipment, adopt safety measures so
    that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
    circuits and error prevention circuits for safe design, redundant design, and structural design.
    In the event that any or all SANYO products(including technical data,services) described or
    contained herein are controlled under any of applicable local export control laws and regulations,
    such products must not be expor ted without obtaining the expor t license from the authorities
    concerned in accordance with the above law.
    No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
    mechanical, including photocopying and recording, or any information storage or retrieval system,
    or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
    Any and all information described or contained herein are subject to change without notice due to
    product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
    for the SANYO product that you intend to use.
    Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
    guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
    no guarantees are made or implied regarding its use or any infringements of intellectual property rights
    or other rights of third parties.

    This catalog provides information as of June, 2001. Specifications and information herein are subject
    to change without notice.

    PS No.0000-2/2

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