DC DC Converter, Relay Drive and Motor Drive Applications: Maximum Ratings

2SK2611
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2611
DC−DC Converter, Relay Drive and Motor Drive
Applications Unit: mm
Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.)

High forward transfer admittance : |Yfs| = 7.0 S (typ.)
Low leakage current : IDSS = 100 µA (max) (VDS = 720 V)
Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain−source voltage VDSS 900 V

Drain−gate voltage (RGS = 20 kΩ) VDGR 900 V
Gate−source voltage VGSS ±30 V
DC (Note 1) ID 9 A
Drain current
Pulse (Note 1) IDP 27 A 1. GATE
Drain power dissipation (Tc = 25°C) PD 150 W 2. DRAIN (HEAT SINK)
3. SOURCE
Single pulse avalanche energy
EAS 663 mJ
(Note 2)
JEDEC ―
Avalanche current IAR 9 A
Repetitive avalanche energy (Note 3) EAR 15 mJ JEITA SC-65
Channel temperature Tch 150 °C TOSHIBA 2-16C1B

Storage temperature range Tstg −55~150 °C Weight: 4.6 g (typ.)
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case Rth (ch−c) 0.833 °C / W

Thermal resistance, channel to
Rth (ch−a) 50 °C / W
ambient
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 15 mH, RG = 25 Ω, IAR = 9 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.

Please handle with caution.
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2SK2611
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS VGS = ±30 V, VDS = 0 V — — ±10 µA

Gate−source breakdown voltage V (BR) GSS IG = ±10 µA, VDS = 0 V ±30 — — V
Drain cut−off current IDSS VDS = 720 V, VGS = 0 V — — 100 µA
Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 900 — — V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 — 4.0 V
Drain−source ON resistance RDS (ON) VGS = 10 V, ID = 4 A — 1.1 1.4 Ω
Forward transfer admittance |Yfs| VDS = 15 V, ID = 4 A 3.0 7.0 — S
Input capacitance Ciss — 2040 —
Reverse transfer capacitance Crss VDS = 25 V, VGS = 0 V, f = 1 MHz — 45 — pF
Output capacitance Coss — 190 —
Rise time tr — 25 —
Turn−on time ton — 60 —

Switching time ns
Fall time tf — 20 —
Turn−off time toff — 95 —
Total gate charge (gate−source

Qg — 58 —
plus gate−drain)
VDD ≈ 400 V, VGS = 10 V, ID = 9 A nC
Gate−source charge Qgs — 32 —
Gate−drain (“miller”) Charge Qgd — 26 —
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current

IDR — — — 9 A
(Note 1)
Pulse drain reverse current
IDRP — — — 27 A
(Note 1)
Forward voltage (diode) VDSF IDR = 9 A, VGS = 0 V — — −1.9 V
Reverse recovery time trr — 1.6 — µs
IDR = 9 A, VGS = 0 V, dIDR / dt = 100 A / µs
Reverse recovery charge Qrr — 20 — µC
Marking
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2SK2611
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2SK2611
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2SK2611
RG = 25 Ω 1  B VDSS 
VDD = 90 V, L = 15 mH E AS = ⋅ L ⋅ I2 ⋅  
2 B
 VDSS − VDD 
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2SK2611
RESTRICTIONS ON PRODUCT USE 000707EAA
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
6 2002-06-27

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2SK2611

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)

Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.)

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain−source voltage VDSS 900 V

Channel temperature Tch 150 °C TOSHIBA 2-16C1B

Characteristics Symbol Max Unit

Thermal resistance, channel to case Rth (ch−c) 0.833 °C / W

Note 2: VDD = 90 V, Tch = 25°C (initial), L = 15 mH, RG = 25 Ω, IAR = 9 A

Note 3: Repetitive rating: Pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device.

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±30 V, VDS = 0 V — — ±10 µA

Output capacitance Coss — 190 —

Turn−on time ton — 60 —

Turn−off time toff — 95 —

Total gate charge (gate−source

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current

RESTRICTIONS ON PRODUCT USE 000707EAA

• The information contained herein is subject to change without notice.

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