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    PNP Transistor 8550 - 1.5A

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    tushar contractor
    This document provides specifications for a PNP transistor with part number 8550. Key specifications include: - Maximum power dissipation of 1.0W - Collector current rating of -1.5A - Collector-base voltage rating of -45V - Minimum DC current gain of 85 at a collector current of -50mA and collector-emitter voltage of -1V.

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    PNP Transistor 8550 - 1.5A

    Uploaded by

    tushar contractor
    36 views1 page
    This document provides specifications for a PNP transistor with part number 8550. Key specifications include: - Maximum power dissipation of 1.0W - Collector current rating of -1.5A - Collector-base voltage rating of -45V - Minimum DC current gain of 85 at a collector current of -50mA and collector-emitter voltage of -1V.

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    8550

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    8550

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    This document provides specifications for a PNP transistor with part number 8550. Key specifications include: - Maximum power dissipation of 1.0W - Collector current rating of -1.5A - Collector-base voltage rating of -45V - Minimum DC current gain of 85 at a collector current of -50mA and collector-emitter voltage of -1V.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    36 views1 page

    PNP Transistor 8550 - 1.5A

    Uploaded by

    tushar contractor
    This document provides specifications for a PNP transistor with part number 8550. Key specifications include: - Maximum power dissipation of 1.0W - Collector current rating of -1.5A - Collector-base voltage rating of -45V - Minimum DC current gain of 85 at a collector current of -50mA and collector-emitter voltage of -1V.

    Copyright:

    © All Rights Reserved
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    PNP TRANSISTOR 8550

    -1.5A

    Power Dissipation: 1.0W

    Collector Current: -1.5A

    Collector-Base Voltage: -45V

    TO-92

    MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃）

    PARAMETERS SYMBOL MIN TYP MAX UNIT CONDITION


    Collector-Emitter Breakdown Voltage BVceo -25 V Ic=-0.1mA
    Collector-Base Breakdown Voltage BVcbo -45 V Ic=-100uA
    Emitter-Base Breakdown Voltage BVebo -5 V Ie=-100μA
    Collector-Base Leakage Icbo -0.1 uA Vcb=-40V
    Collector-Emitter Leakage Iceo -0.1 uA Vce=-20V
    Emitter-Base Leakage Iebo -0.1 uA Veb=-5V
    Collector-Emitter Saturation Voltage Vce(sat) -0.6 V Ic=-1500mA, Ib=-50mA
    Base-Emiiter Saturation Voltage Vbe(sat) -1.2 V Ic=-1500mA, Ib=-50mA
    DC Current Gain Hfe1 85 300 Vce=-1V,Ic=-50mA
    Hfe2 50 Vce=-1V,Ic=-500mA
    Collector Current Ic -0.5 A
    Peak Collector Current Icp -8 A(Pulse)
    Current Gain Bandwidth fT 150 MHz Vcb=-6V, Ic=-20mA
    Output Capacitance Cob 32 pF Vcb=-20V,Ie=0,f=1MHz
    Power Dissipation Pc 1.0 W
    Junction Temperature Tj 150 ℃
    Storage Temperature Tstg -55 150 ℃

    Hfe1 Classification
    Rank B C D
    Range 85-160 120-200 160-300

    STANSON TECHNOLOGY
    120 Bentley Square, Mountain View, Ca 94040 USA
    TEL: (650) 9389294 FAX: (650) 9389295

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