MCP1700

Low Quiescent Current LDO

Features: General Description:
• 1.6 µA Typical Quiescent Current The MCP1700 is a family of CMOS low dropout (LDO)
• Input Operating Voltage Range: 2.3V to 6.0V voltage regulators that can deliver up to 250 mA of
• Output Voltage Range: 1.2V to 5.0V current while consuming only 1.6 µA of quiescent
current (typical). The input operating range is specified
• 250 mA Output Current for Output
from 2.3V to 6.0V, making it an ideal choice for two and
Voltages  2.5V
three primary cell battery-powered applications, as well
• 200 mA Output Current for Output as single cell Li-Ion-powered applications.
Voltages < 2.5V
The MCP1700 is capable of delivering 250 mA with
• Low Dropout (LDO) Voltage
only 178 mV of input to output voltage differential
- 178 mV Typical @ 250 mA for VOUT = 2.8V (VOUT = 2.8V). The output voltage tolerance of the
• 0.4% Typical Output Voltage Tolerance MCP1700 is typically ±0.4% at +25°C and ±3%
• Standard Output Voltage Options: maximum over the operating junction temperature
- 1.2V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 5.0V range of -40°C to +125°C.
• Stable with 1.0 µF Ceramic Output Capacitor Output voltages available for the MCP1700 range from
• Short Circuit Protection 1.2V to 5.0V. The LDO output is stable when using only
1 µF output capacitance. Ceramic, tantalum or
• Overtemperature Protection
aluminum electrolytic capacitors can all be used for
input and output. Overcurrent limit and overtemperature
Applications: shutdown provide a robust solution for any application.
• Battery-Powered Devices Package options include SOT-23, SOT-89, TO-92 and
• Battery-Powered Alarm Circuits 2x2 DFN-6.
• Smoke Detectors
• CO2 Detectors Package Types
• Pagers and Cellular Phones 3-Pin SOT-23 3-Pin SOT-89
• Smart Battery Packs VIN VIN
• Low Quiescent Current Voltage Reference
3
• PDAs
MCP1700
• Digital Cameras MCP1700
• Microcontroller Power 1 2 3
1 2
GND VOUT GND VIN VOUT
Related Literature:
• AN765, “Using Microchip’s Micropower LDOs” 3-Pin TO-92 2x2 DFN-6*
(DS00765), Microchip Technology Inc., 2002 VIN 1 6 VOUT
• AN766, “Pin-Compatible CMOS Upgrades to MCP1700
BiPolar LDOs” (DS00766), NC 2 EP 5 NC
1 2 3 7
Microchip Technology Inc., 2002 GND 3 4 NC
• AN792, “A Method to Determine How Much
Power a SOT23 Can Dissipate in an Application”
(DS00792), Microchip Technology Inc., 2001 GND VIN VOUT
* Includes Exposed Thermal Pad (EP); see Table 3-1.

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MCP1700
Functional Block Diagrams

MCP1700

VIN VOUT

Error Amplifier
+VIN
Voltage
-
Reference
+

Overcurrent
Overtemperature

GND

Typical Application Circuits

MCP1700

GND VIN
(2.3V to 3.2V)
VOUT VIN
1.8V
VOUT CIN
1 µF Ceramic
IOUT
150 mA COUT
1 µF Ceramic

DS20001826D-page 2  2005-2016 Microchip Technology Inc.

 MCP1700
1.0 ELECTRICAL † Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
CHARACTERISTICS a stress rating only, and functional operation of the device at
those or any other conditions above those indicated in the
Absolute Maximum Ratings † operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
VDD ............................................................................................+6.5V may affect device reliability.
All inputs and outputs w.r.t. ......... (VSS - 0.3V) to (VIN + 0.3V)
Peak Output Current .................................... Internally Limited
Storage Temperature ....................................-65°C to +150°C
Maximum Junction Temperature ................................... 150°C
Operating Junction Temperature...................-40°C to +125°C
ESD protection on all pins (HBM;MM)  4 kV;  400V

DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise specified, all limits are established for VIN = VR + 1V, ILOAD = 100 µA,
COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.
Boldface type applies for junction temperatures, TJ (Note 6) of -40°C to +125°C.
Parameters Sym. Min. Typ. Max. Units Conditions
Input/Output Characteristics
Input Operating VIN 2.3 — 6.0 V Note 1
Voltage
Input Quiescent Iq — 1.6 4 µA IL = 0 mA, VIN = VR + 1V
Current
Maximum Output IOUT_mA 250 — — mA For VR  2.5V
Current 200 — — For VR  2.5V
Output Short IOUT_SC — 408 — mA VIN = VR + 1V, VOUT = GND
Circuit Current Current (peak current) measured 10 ms
after short is applied.
Output Voltage VOUT VR - 2.0% VR ± 0.4% VR + 2.0% V Note 2
Regulation VR - 3.0% VR + 3.0%
VOUT Temperature TCVOUT — 50 — ppm/°C Note 3
Coefficient
Line Regulation VOUT/ -1.0 ±0.75 +1.0 %/V (VR + 1)V  VIN  6V
(VOUTXVIN)
Load Regulation VOUT/VOUT -1.5 ±1.0 +1.5 % IL = 0.1 mA to 250 mA for VR  2.5V
IL = 0.1 mA to 200 mA for VR  2.5V
Note 4
Dropout Voltage VIN - VOUT — 178 350 mV IL = 250 mA, (Note 1, Note 5)
VR  2.5V
Dropout Voltage VIN - VOUT — 150 350 mV IL = 200 mA, (Note 1, Note 5)
VR  2.5V
Output Rise Time TR — 500 — µs 10% VR to 90% VR VIN = 0V to 6V,
RL = 50 resistive
Note 1: The minimum VIN must meet two conditions: VIN  2.3V and VIN  VR + 3.0%  VDROPOUT.
2: VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The
input voltage VIN = VR + 1.0V; IOUT = 100 µA.
3: TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * Temperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with a VR + 1V differential applied.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.

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MCP1700
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise specified, all limits are established for VIN = VR + 1V, ILOAD = 100 µA,
COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.
Boldface type applies for junction temperatures, TJ (Note 6) of -40°C to +125°C.
Parameters Sym. Min. Typ. Max. Units Conditions
Output Noise eN — 3 — µV/(Hz)1/2 IL = 100 mA, f = 1 kHz, COUT = 1 µF
Power Supply PSRR — 44 — dB f = 100 Hz, COUT = 1 µF, IL = 50 mA,
Ripple Rejection VINAC = 100 mV pk-pk, CIN = 0 µF,
Ratio VR = 1.2V
Thermal TSD — 140 — °C VIN = VR + 1V, IL = 100 µA
Shutdown
Protection
Note 1: The minimum VIN must meet two conditions: VIN  2.3V and VIN  VR + 3.0%  VDROPOUT.
2: VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The
input voltage VIN = VR + 1.0V; IOUT = 100 µA.
3: TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * Temperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with a VR + 1V differential applied.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise specified, all limits are established for VIN = VR + 1V, ILOAD = 100 µA,
COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.
Boldface type applies for junction temperatures, TJ (Note 1) of -40°C to +125°C.
Parameters Sym. Min. Typ. Max. Units Conditions
Temperature Ranges
Specified Temperature Range TA -40 +125 °C
Operating Temperature Range TJ -40 +125 °C
Storage Temperature Range TA -65 +150 °C
Thermal Package Resistance
Thermal Resistance, 2x2 DFN JA — 91 — °C/W EIA/JEDEC® JESD51-7
JC — 19 — °C/W FR-4 0.063 4-Layer Board
Thermal Resistance, SOT-23 JA — 336 — °C/W EIA/JEDEC JESD51-7
JC — 110 — °C/W FR-4 0.063 4-Layer Board
Thermal Resistance, SOT-89 JA — 180 — °C/W EIA/JEDEC JESD51-7
JC — 52 — °C/W FR-4 0.063 4-Layer Board
Thermal Resistance, TO-92 JA — 160 — °C/W
JC — 66.3 — °C/W
Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.

DS20001826D-page 4  2005-2016 Microchip Technology Inc.

 MCP1700
2.0 TYPICAL PERFORMANCE CURVES
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VR + 1V.
Note: Junction Temperature (TJ) is approximated by soaking the device under test to an ambient temperature equal to the desired junction
temperature. The test time is small enough such that the rise in Junction temperature over the Ambient temperature is not significant.

3.0 1.208
VR = 1.2V VR = 1.2V
2.8 IOUT = 0 µA 1.206 IOUT = 0.1 mA
scent Current (µA)

TJ = +125°C TJ = +125°C

utput Voltage (V)

2.6 1.204
2.4 1.202
2.2 TJ = - 40°C
1.200
2.0 TJ = +25°C
1.198
1.8 TJ = +25°C
1.196

Ou
Quies

1.6
1.194
1.4 TJ = - 40°C
1.192
1.2
1.0 1.190
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Input Voltage (V) Input Voltage (V)

FIGURE 2-1: Input Quiescent Current vs. FIGURE 2-4: Output Voltage vs. Input
Input Voltage. Voltage (VR = 1.2V).

50
1.800
45 VR = 2.8V VR = 1.8V
TJ = +125°C
IOUT = 0.1 mA
und Current (µA)

40 1.795
put Voltage (V)

TJ = +25°C
35
1.790
30
TJ = - 40°C TJ = - 40°C TJ = +125°C
25 1.785
20
Outp
Grou

15 1 780
1.780
10 1.775 TJ = +25°C
5
0 1.770
0 25 50 75 100 125 150 175 200 225 250 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Load Current (mA) Input Voltage (V)

FIGURE 2-2: Ground Current vs. Load FIGURE 2-5: Output Voltage vs. Input
Current. Voltage (VR = 1.8V).

2.50 2.800
VIN = VR + 1V VR = 2.8V
2.798
IOUT = 0 µA IOUT = 0.1 mA
cent Current (µA)

TJ = +25°C
2.796
utput Voltage (V)

2.25
VR = 5.0V
2.794
2.792
2.00
2.790 TJ = - 40°C
VR = 1.2V 2.788
1.75
2.786
Quiesc

Ou

2.784 TJ = +125°C
1.50 VR = 2.8V
2.782
2.780
1.25 2.778
-40 -25 -10 5 20 35 50 65 80 95 110 125 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0
Junction Temperature (°C) Input Voltage (V)

FIGURE 2-3: Quiescent Current vs. FIGURE 2-6: Output Voltage vs. Input
Junction Temperature. Voltage (VR = 2.8V).

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MCP1700
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VR + 1V.

5.000 2.798 TJ = +25°C

VR = 5.0V TJ = +25°C
4.995 IOUT = 0.1 mA 2.796

utput Voltage (V)

2.794 VR = 2.8V
Output Voltage (V)

4.990 VIN = VR + 1V
4.985 TJ = - 40°C 2.792
2.790
4.980 TJ = - 40°C
2.788
4.975
2.786
4.970

Ou
2 784
2.784 TJ = +125°C
4.965 TJ = +125°C 2.782
4.960 2.780
4.955 2.778
5.0 5.2 5.4 5.6 5.8 6.0 0 50 100 150 200 250
Input Voltage (V) Load Current (mA)

FIGURE 2-7: Output Voltage vs. Input FIGURE 2-10: Output Voltage vs. Load
Voltage (VR = 5.0V). Current (VR = 2.8V).

1.21 5.000
TJ = - 40°C VR = 1.2V
VIN = VR + 1V 4.995 TJ = +25°C
1.20

Output Voltage (V)

Output Voltage (V)

4.990
1.19 TJ = +25°C 4.985 TJ = - 40°C
4.980
1.18 VR = 5.0V
4.975 VIN = VR + 1V
1.17 TJ = +125
+125°C
C 4 970
4.970
4.965 TJ = +125°C
1.16
4.960
1.15 4.955
0 25 50 75 100 125 150 175 200 0 50 100 150 200 250
Load Current (mA) Load Current (mA)

FIGURE 2-8: Output Voltage vs. Load FIGURE 2-11: Output Voltage vs. Load
Current (VR = 1.2V). Current (VR = 5.0V).

1.792 0.25
VR = 2.8V
1.790
0.20
utput Voltage (V)

TJ = +125°C
pout Votage (V)

1.788 TJ = +25°C

0.15 TJ = +25°C
1.786 TJ = - 40°C

TJ = +125°C
1.784 0.10
TJ = - 40°C
Ou

Drop

1.782
VR = 1.8V 0.05
1.780 VIN = VR + 1V

1.778 0.00
0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200 225 250
Load Current (mA) Load Current (mA)

FIGURE 2-9: Output Voltage vs. Load FIGURE 2-12: Dropout Voltage vs. Load
Current (VR = 1.8V). Current (VR = 2.8V).

DS20001826D-page 6  2005-2016 Microchip Technology Inc.

 MCP1700
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VR + 1V.

0.16 10.00
VR = 5.0V VIN = 3.8V
0.14 VR = 2.8V
IOUT = 50 mA
0.12 TJ = +125°C
out Voltage (V)

Noise (µV/√Hz)
VIN = 2.5V VIN = 2.8V
0.10 1.00
TJ = +25°C VR = 1.2V VR = 1.8V
IOUT = 50 mA IOUT = 50 mA
0.08
0.06
Dropo

0 10
0.10

N
TJ = - 40°C
0.04
0.02
0.00 0.01
0 25 50 75 100 125 150 175 200 225 250 0.01 0.1 1 10 100 1000
Load Current (mA) Frequency (kHz)

FIGURE 2-13: Dropout Voltage vs. Load FIGURE 2-16: Noise vs. Frequency.
Current (VR = 5.0V).

+20
VIN = 2.2V
+10
CIN = 1µF Ceramic
0 COUT = 1µF Ceramic
PSRR (dB/decade)

-10
-20 VR = 1.2V
-30
-40
-50
I = 100 mA
-60
Load
-70 Step

0.01 0.10 1.00 10.0 100 1000

Frequency (KHz)

FIGURE 2-14: Power Supply Ripple FIGURE 2-17: Dynamic Load Step
Rejection vs. Frequency (VR = 1.2V). (VR = 1.2V).

+20
VIN = 2.8V
+10
0 CIN = 1µF Ceramic
PSRR (dB/Decade)

-10
COUT = 1µF Ceramic
-20 VR = 1.8V
-30
-40 I = 100 mA
-50 Load
-60 Step

0.01 0.01 1 10.00 100 1000

Frequency (KHz)

FIGURE 2-15: Power Supply Ripple FIGURE 2-18: Dynamic Load Step
Rejection vs. Frequency (VR = 2.8V). (VR = 1.8V).

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MCP1700
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VR + 1V.

VIN = 6V
CIN = 1 µF Ceramic
VIN = 3.8V COUT = 22 µF (1 ESR)
VR = 5V
CIN = 1µF Ceramic
COUT = 1µF Ceramic
VR = 2.8V

I = 100 mA IOUT= 200 mA

Load Load Step
Step

FIGURE 2-19: Dynamic Load Step FIGURE 2-22: Dynamic Load Step
(VR = 2.8V). (VR = 5.0V).

VIN = 2.8V VIN = 3.8V to

CIN = 1 µF Ceramic 4.8V COUT = 1 µF Ceramic
COUT = 22 µF (1 ESR)
VR = 1.8V

VR = 2.8V

IOUT= 200 mA
Load Step IOUT
100 mA

FIGURE 2-20: Dynamic Load Step FIGURE 2-23: Dynamic Line Step
(VR = 1.8V). (VR = 2.8V).

VIN = 3.8V VIN = 0V to

2.2V COUT = 1 µF Ceramic
CIN = 1 µF Ceramic
RLOAD = 25
COUT = 22 µF (1 ESR)
VR = 2.8V

IOUT= 200 mA VR = 1.2V

Load Step

FIGURE 2-21: Dynamic Load Step FIGURE 2-24: Start-up from VIN
(VR = 2.8V). (VR = 1.2V).

DS20001826D-page 8  2005-2016 Microchip Technology Inc.

 MCP1700
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VR + 1V.

VIN = 0V to
2.8V COUT = 1 µF Ceramic 0.0
VR = 2.8V
RLOAD = 25 IOUT = 0 to 250 mA
-0.1 VIN = 5.0V

ad Regulation (%)
VIN = 4.3V
-0.2

-0.3

-0.4
VIN = 3.3V

Loa
-0.5
VR = 1.8V
-0.6

-0.7
-40 -25 -10 5 20 35 50 65 80 95 110 125
Junction Temperature (°C)

FIGURE 2-25: Start-up from VIN FIGURE 2-28: Load Regulation vs.
(VR = 1.8V). Junction Temperature (VR = 2.8V).

VIN = 0V to
COUT = 1 µF Ceramic 0.10
3.8V VR = 5.0V
RLOAD = 25
IOUT = 0 to 250 mA
0.05

d Regulation (%)
VIN = 6.0V
0.00

-0.05

VIN = 5
5.5V
5
Load

-0.10
0 10
VR = 2.8V
-0.15

-0.20
-40 -25 -10 5 20 35 50 65 80 95 110 125
Junction Temperature (°C)

FIGURE 2-26: Start-up from VIN FIGURE 2-29: Load Regulation vs.
(VR = 2.8V). Junction Temperature (VR = 5.0V).

0.3
VR = 1.8V 0.10
0.2 VIN = 5.0V IOUT = 0 to 200 mA
0.05
Line Regulation (%/V)
ad Regulation (%)

0.1 0.00
VIN = 3.5V VR = 2.8V
0.0 -0.05

-0.1 -0.10 VR = 1.8V

-0.15
02
-0.2
Loa

VIN = 2.2V -0.20

-0.3 VR = 1.2V
-0.25
-0.4 -0.30
-40 -25 -10 5 20 35 50 65 80 95 110 125 -40 -25 -10 5 20 35 50 65 80 95 110 125
Junction Temperature (°C) Junction Temperature (°C)

FIGURE 2-27: Load Regulation vs. FIGURE 2-30: Line Regulation vs.
Junction Temperature (VR = 1.8V). Temperature (VR = 1.2V, 1.8V, 2.8V).

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MCP1700
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.

TABLE 3-1: PIN FUNCTION TABLE

Pin No. Pin No. Pin No. Pin No.
Name Function
SOT-23 SOT-89 TO-92 2x2 DFN-6
1 1 1 3 GND Ground Terminal
2 3 3 6 VOUT Regulated Voltage Output
3 2 2 1 VIN Unregulated Supply Voltage
— — — 2, 4, 5 NC No Connect
— — — 7 EP Exposed Thermal Pad

3.1 Ground Terminal (GND) 3.4 No Connect (NC)

Regulator ground. Tie GND to the negative side of the No internal connection. The pins marked NC are true
output and the negative side of the input capacitor. “No Connect” pins.
Only the LDO bias current (1.6 µA typical) flows out of
this pin; there is no high current. The LDO output 3.5 Exposed Thermal Pad (EP)
regulation is referenced to this pin. Minimize voltage
drops between this pin and the negative side of the There is an internal electrical connection between the
load. Exposed Thermal Pad (EP) and the GND pin; they
must be connected to the same potential on the Printed
3.2 Regulated Output Voltage (VOUT) Circuit Board (PCB).

Connect VOUT to the positive side of the load and the

positive terminal of the output capacitor. The positive
side of the output capacitor should be physically
located as close to the LDO VOUT pin as is practical.
The current flowing out of this pin is equal to the DC
load current.

3.3 Unregulated Input Voltage Pin

(VIN)
Connect VIN to the input unregulated source voltage.
As with all low dropout linear regulators, low source
impedance is necessary for the stable operation of the
LDO. The amount of capacitance required to ensure
low source impedance will depend on the proximity of
the input source capacitors or battery type. For most
applications, 1 µF of capacitance will ensure stable
operation of the LDO circuit. For applications that have
load currents below 100 mA, the input capacitance
requirement can be lowered. The type of capacitor
used can be ceramic, tantalum or aluminum
electrolytic. The low ESR characteristics of the ceramic
will yield better noise and PSRR performance at high
frequency.

DS20001826D-page 10  2005-2016 Microchip Technology Inc.

 MCP1700
4.0 DETAILED DESCRIPTION

4.1 Output Regulation 4.3 Overtemperature

A portion of the LDO output voltage is fed back to the The internal power dissipation within the LDO is a
internal error amplifier and compared with the precision function of input-to-output voltage differential and load
internal bandgap reference. The error amplifier output current. If the power dissipation within the LDO is
will adjust the amount of current that flows through the excessive, the internal junction temperature will rise
P-Channel pass transistor, thus regulating the output above the typical shutdown threshold of 140°C. At that
voltage to the desired value. Any changes in input point, the LDO will shut down and begin to cool to the
voltage or output current will cause the error amplifier typical turn-on junction temperature of 130°C. If the
to respond and adjust the output voltage to the target power dissipation is low enough, the device will
voltage (refer to Figure 4-1). continue to cool and operate normally. If the power
dissipation remains high, the thermal shutdown
4.2 Overcurrent protection circuitry will again turn off the LDO,
protecting it from catastrophic failure.
The MCP1700 internal circuitry monitors the amount of
current flowing through the P-Channel pass transistor.
In the event of a short circuit or excessive output
current, the MCP1700 will turn off the P-Channel
device for a short period, after which the LDO will
attempt to restart. If the excessive current remains, the
cycle will repeat itself.

MCP1700

VIN VOUT

Error Amplifier
+VIN
Voltage
-
Reference
+

Overcurrent
Overtemperature

GND

FIGURE 4-1: Block Diagram.

 2005-2016 Microchip Technology Inc. DS20001826D-page 11

MCP1700
5.0 FUNCTIONAL DESCRIPTION
The MCP1700 CMOS low dropout linear regulator is
intended for applications that need the lowest current
consumption while maintaining output voltage
regulation. The operating continuous load of the
MCP1700 ranges from 0 mA to 250 mA (VR  2.5V).
The input operating voltage ranges from 2.3V to 6.0V,
making it capable of operating from two, three or four
alkaline cells or a single Li-Ion cell battery input.

5.1 Input
The input of the MCP1700 is connected to the source
of the P-Channel PMOS pass transistor. As with all
LDO circuits, a relatively low source impedance (10)
is needed to prevent the input impedance from causing
the LDO to become unstable. The size and type of the
required capacitor depend heavily on the input source
type (battery, power supply) and the output current
range of the application. For most applications (up to
100 mA), a 1 µF ceramic capacitor will be sufficient to
ensure circuit stability. Larger values can be used to
improve circuit AC performance.

5.2 Output
The maximum rated continuous output current for the
MCP1700 is 250 mA (VR  2.5V). For applications
where VR < 2.5V, the maximum output current is
200 mA.
A minimum output capacitance of 1.0 µF is required for
small signal stability in applications that have up to
250 mA output current capability. The capacitor type
can be ceramic, tantalum or aluminum electrolytic. The
ESR range on the output capacitor can range from 0
to 2.0.

5.3 Output Rise time

When powering up the internal reference output, the
typical output rise time of 500 µs is controlled to
prevent overshoot of the output voltage.

DS20001826D-page 12  2005-2016 Microchip Technology Inc.

 MCP1700
6.0 APPLICATION CIRCUITS AND The maximum continuous operating junction
temperature specified for the MCP1700 is +125°C. To
ISSUES estimate the internal junction temperature of the
MCP1700, the total internal power dissipation is
6.1 Typical Application multiplied by the thermal resistance from junction to
The MCP1700 is most commonly used as a voltage ambient (RJA). The thermal resistance from junction to
regulator. Its low quiescent current and low dropout ambient for the SOT-23 pin package is estimated at
voltage make it ideal for many battery-powered 230°C/W.
applications.
EQUATION 6-2:
MCP1700 T J  MAX  = P TOTAL  R JA + T A  MAX 
VIN
VOUT GND (2.3V to 3.2V)
VIN TJ(MAX) = Maximum continuous junction
1.8V CIN temperature
VOUT
IOUT 1 µF Ceramic PTOTAL = Total power dissipation of the device
COUT
150 mA RJA = Thermal resistance from junction to
1 µF Ceramic
ambient
FIGURE 6-1: Typical Application Circuit. TA(MAX) = Maximum ambient temperature

6.1.1 APPLICATION INPUT CONDITIONS The maximum power dissipation capability for a
package can be calculated given the junction-to-
Package Type = SOT-23 ambient thermal resistance and the maximum ambient
Input Voltage Range = 2.3V to 3.2V temperature for the application. The following equation
VIN maximum = 3.2V can be used to determine the maximum internal power
dissipation of the package.
VOUT typical = 1.8V
IOUT = 150 mA maximum
EQUATION 6-3:

6.2 Power Calculations  T J  MAX  – T A  MAX  

P D  MAX  = ---------------------------------------------------
R JA
6.2.1 POWER DISSIPATION
The internal power dissipation of the MCP1700 is a PD(MAX) = Maximum power dissipation of the
function of input voltage, output voltage and output device
current. The power dissipation resulting from the TJ(MAX) = Maximum continuous junction
quiescent current draw is so low it is insignificant temperature
(1.6 µA x VIN). The following equation can be used to TA(MAX) = Maximum ambient temperature
calculate the internal power dissipation of the LDO.
RJA = Thermal resistance from junction to
ambient
EQUATION 6-1:
P LDO =  V IN  MAX  – V OUT  MIN    I OUT  MAX  EQUATION 6-4:
T J  RISE  = P D  MAX   R JA
PLDO = Internal power dissipation of the
LDO Pass device
TJ(RISE) = Rise in the device’s junction
VIN(MAX) = Maximum input voltage
temperature over the ambient
VOUT(MIN) = Minimum output voltage of the temperature
LDO
PTOTAL = Maximum power dissipation of the
device
RJA = Thermal resistance from junction to
ambient

 2005-2016 Microchip Technology Inc. DS20001826D-page 13

MCP1700
EQUATION 6-5:
TJ(RISE) = PTOTAL x RJA
T J = T J  RISE  + T A
TJ(RISE) = 218.1 milli-Watts x 230.0°C/Watt

TJ = Junction Temperature TJ(RISE) = 50.2°C

TJ(RISE) = Rise in the device’s junction Junction Temperature Estimate

temperature over the ambient To estimate the internal junction temperature, the
temperature calculated temperature rise is added to the ambient or
TA = Ambient temperature offset temperature. For this example, the worst-case
junction temperature is estimated below.

6.3 Voltage Regulator TJ = TJ(RISE) + TA(MAX)

Internal power dissipation, junction temperature rise, TJ = 90.2°C
junction temperature and maximum power dissipation Maximum Package Power Dissipation at +40°C
are calculated in the following example. The power Ambient Temperature
dissipation resulting from ground current is small
enough to be neglected. 2x2 DFN-6 (91°C/Watt = RJA)
PD(MAX) = (125°C - 40°C) / 91°C/W
6.3.1 POWER DISSIPATION EXAMPLE PD(MAX) = 934 milli-Watts
Package SOT-23 (230.0°C/Watt = RJA)
Package Type = SOT-23 PD(MAX) = (125°C - 40°C) / 230°C/W
Input Voltage PD(MAX) = 369.6 milli-Watts
VIN = 2.3V to 3.2V SOT-89 (52°C/Watt = RJA)
LDO Output Voltages and Currents PD(MAX) = (125°C - 40°C) / 52°C/W
VOUT = 1.8V PD(MAX) = 1.635 Watts
IOUT = 150 mA TO-92 (131.9°C/Watt = RJA)
Maximum Ambient Temperature PD(MAX) = (125°C - 40°C) / 131.9°C/W
TA(MAX) = +40°C PD(MAX) = 644 milli-Watts
Internal Power Dissipation
Internal Power dissipation is the product of the LDO
output current times the voltage across the LDO
(VIN to VOUT).
PLDO(MAX) = (VIN(MAX) - VOUT(MIN)) x IOUT(MAX)
PLDO = (3.2V - (0.97 x 1.8V)) x 150 mA
PLDO = 218.1 milli-Watts

Device Junction Temperature Rise

The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction to ambient for the application. The thermal
resistance from junction to ambient (RJA) is derived
from an EIA/JEDEC® standard for measuring thermal
resistance for small surface mount packages. The EIA/
JEDEC specification is JESD51-7, “High Effective
Thermal Conductivity Test Board for Leaded Surface
Mount Packages”. The standard describes the test
method and board specifications for measuring the
thermal resistance from junction to ambient. The actual
thermal resistance for a particular application can vary
depending on many factors, such as copper area and
thickness. Refer to AN792, “A Method to Determine
How Much Power a SOT-23 Can Dissipate in an
Application” (DS00792), for more information regarding
this subject.

DS20001826D-page 14  2005-2016 Microchip Technology Inc.

 MCP1700
6.4 Voltage Reference
The MCP1700 can be used not only as a regulator, but
also as a low quiescent current voltage reference. In
many microcontroller applications, the initial accuracy
of the reference can be calibrated using production test
equipment or by using a ratio measurement. When the
initial accuracy is calibrated, the thermal stability and
line regulation tolerance are the only errors introduced
by the MCP1700 LDO. The low cost, low quiescent
current and small ceramic output capacitor are all
advantages when using the MCP1700 as a voltage
reference.

Ratio Metric Reference

1 µA Bias PIC®
MCP1700 Microcontroller
VIN
CIN VOUT VREF
1 µF COUT
GND 1 µF
AD0
AD1

Bridge Sensor

FIGURE 6-2: Using the MCP1700 as a

voltage reference.

6.5 Pulsed Load Applications

For some applications, there are pulsed load current
events that may exceed the specified 250 mA
maximum specification of the MCP1700. The internal
current limit of the MCP1700 will prevent high peak
load demands from causing non-recoverable damage.
The 250 mA rating is a maximum average continuous
rating. As long as the average current does not exceed
250 mA, pulsed higher load currents can be applied to
the MCP1700. The typical current limit for the
MCP1700 is 550 mA (TA + 25°C).

 2005-2016 Microchip Technology Inc. DS20001826D-page 15

MCP1700
7.0 PACKAGING INFORMATION

7.1 Package Marking Information

3-Pin SOT-23
Standard
Extended Temp
Symbol Voltage *
CKNN CK 1.2
CM 1.8
CP 2.5
CQ 2.8
3-Pin SOT-89 CR 3.0
CS 3.3
CU 5.0
CUYYWW
* Custom output voltages available upon request.
NNN
Contact your local Microchip sales office for more
information.

3-Pin TO-92 Example

XXXXXX 1700
XXXXXX 1202E
XXXXXX e3
TO^^
YWWNNN 322256

6-Lead DFN (2x2x0.9 mm) Example

Part Number Code

MCP1700T-1202E/MAY ABB ABB
ABC
256
MCP1700T-1802E/MAY
MCP1700T-2502E/MAY ABD
MCP1700T-2802E/MAY ABF
MCP1700T-3002E/MAY ABE
MCP1700T-3302E/MAY AAZ
MCP1700T-5002E/MAY ABA

Legend: XX...X Customer-specific information

Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
e3 Pb-free JEDEC® designator for Matte Tin (Sn)
* This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.

Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.

DS20001826D-page 16  2005-2016 Microchip Technology Inc.

 MCP1700

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 2005-2016 Microchip Technology Inc. DS20001826D-page 17

MCP1700

Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging

DS20001826D-page 18  2005-2016 Microchip Technology Inc.

 MCP1700

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 2005-2016 Microchip Technology Inc. DS20001826D-page 19

MCP1700

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DS20001826D-page 20  2005-2016 Microchip Technology Inc.

 MCP1700

3-Lead Plastic Small Outline Transistor (MB) - [SOT-89]

Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging

X1
X2

Y1

Y3 Y4

Y2 Y

G
X
SILK SCREEN
C

RECOMMENDED LAND PATTERN

Units MILLIMETERS
Dimension Limits MIN NOM MAX
C 1.50 (BSC)
X (3 PLACES) 0.900
X1 1.733
X2 (2 PLACES) 0.416
G (2 PLACES) 0.600
Y (2 PLACES) 1.300
Y1 3.125
Y2 1.475
Y3 0.825
Y4 1.000
Notes:
1. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.

Microchip Technology Drawing C04-2029C

 2005-2016 Microchip Technology Inc. DS20001826D-page 21

MCP1700

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DS20001826D-page 22  2005-2016 Microchip Technology Inc.

 MCP1700

 2005-2016 Microchip Technology Inc. DS20001826D-page 23

MCP1700

DS20001826D-page 24  2005-2016 Microchip Technology Inc.

 MCP1700
NOTES:

 2005-2016 Microchip Technology Inc. DS20001826D-page 25

MCP1700
APPENDIX A: REVISION HISTORY

Revision D (September 2016)

The following is the list of modifications:
• Updated DC Characteristics.
• Updated Product Identification System.
• Minor typographical changes.

Revision C (October 2013)

The following is the list of modifications:
• Added new package to the family (2x2 DFN-6)
and related information throughout the document.
• Updated thermal package resistance information
in Temperature Specifications.
• Updated Section 3.0 “Pin Descriptions”.
• Added package markings and drawings for the
2x2 DFN-6 package.
• Added information related to the 2.8V option
throughout the document.
• Updated Product Identification System.
• Minor typographical changes.

Revision B (February 2007)

• Updated Packaging Information.
• Corrected Product Identification System.
• Changed X5R to X7R in Notes to DC
Characteristics, Temperature Specifications, and
Section 2.0 “Typical Performance Curves”.

Revision A (November 2005)

• Original release of this document.

DS20001826D-page 26  2005-2016 Microchip Technology Inc.

 MCP1700
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

PART NO. X- XXX X X /XX Examples:

MCP1700 Tape & Voltage Tolerance Temp. Package 2x2 DFN-6 Package:
Reel Output Range a) MCP1700T-1202E/MAY: 1.2V VOUT
b) MCP1700T-1802E/MAY: 1.8V VOUT
c) MCP1700T-2502E/MAY: 2.5V VOUT
d) MCP1700T-2802E/MAY: 2.8V VOUT
Device: MCP1700: Low Quiescent Current LDO e) MCP1700T-3002E/MAY: 3.0V VOUT
f) MCP1700T-3302E/MAY: 3.3V VOUT
g) MCP1700T-5002E/MAY: 5.0V VOUT
Tape and Reel: T: Tape and Reel only applies to SOT-23 and SOT-89 SOT-89 Package:
devices
a) MCP1700T-1202E/MB: 1.2V VOUT
b) MCP1700T-1802E/MB: 1.8V VOUT
Standard Output 120 = 1.2V c) MCP1700T-2502E/MB: 2.5V VOUT
Voltage: * 180 = 1.8V d) MCP1700T-2802E/MB: 2.8V VOUT
250 = 2.5V e) MCP1700T-3002E/MB: 3.0V VOUT
280 = 2.8V f) MCP1700T-3302E/MB: 3.3V VOUT
300 = 3.0V g) MCP1700T-5002E/MB: 5.0V VOUT
330 = 3.3V TO-92 Package:
500 = 5.0V
a) MCP1700-1202E/TO: 1.2V VOUT
* Custom output voltages available upon request. Contact b) MCP1700-1802E/TO: 1.8V VOUT
your local Microchip sales office for more information c) MCP1700-2502E/TO: 2.5V VOUT
d) MCP1700-2802E/TO: 2.8V VOUT
e) MCP1700-3002E/TO: 3.0V VOUT
Tolerance: 2 = 2% (Standard) f) MCP1700-3302E/TO: 3.3V VOUT
g) MCP1700-5002E/TO: 5.0V VOUT
Temperature Range: E = -40°C to +125°C (Extended) SOT-23 Package:
a) MCP1700T-1202E/TT: 1.2V VOUT
b) MCP1700T-1802E/TT: 1.8V VOUT
Package: MAY = Plastic Small Outline Transistor (DFN), 6-lead c) MCP1700T-2502E/TT: 2.5V VOUT
MB = Plastic Small Outline Transistor (SOT-89), 3-lead d) MCP1700T-2802E/TT: 2.8V VOUT
TO = Plastic Small Outline Transistor (TO-92), 3-lead e) MCP1700T-3002E/TT: 3.0V VOUT
TT = Plastic Small Outline Transistor (SOT-23), 3-lead f) MCP1700T-3302E/TT: 3.3V VOUT
g) MCP1700T-5002E/TT: 5.0V VOUT

 2005-2016 Microchip Technology Inc. DS20001826D-page 27

MCP1700

DS20001826D-page 28  2005-2016 Microchip Technology Inc.

Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.

• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.

• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

• Microchip is willing to work with the customer who is concerned about the integrity of their code.

• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Information contained in this publication regarding device Trademarks

applications and the like is provided only for your convenience
The Microchip name and logo, the Microchip logo, AnyRate,
and may be superseded by updates. It is your responsibility to dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KeeLoq,
ensure that your application meets with your specifications.
KeeLoq logo, Kleer, LANCheck, LINK MD, MediaLB, MOST,
MICROCHIP MAKES NO REPRESENTATIONS OR
MOST logo, MPLAB, OptoLyzer, PIC, PICSTART, PIC32 logo,
WARRANTIES OF ANY KIND WHETHER EXPRESS OR RightTouch, SpyNIC, SST, SST Logo, SuperFlash and UNI/O
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
are registered trademarks of Microchip Technology
OTHERWISE, RELATED TO THE INFORMATION,
Incorporated in the U.S.A. and other countries.
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR ClockWorks, The Embedded Control Solutions Company,
FITNESS FOR PURPOSE. Microchip disclaims all liability ETHERSYNCH, Hyper Speed Control, HyperLight Load,
arising from this information and its use. Use of Microchip IntelliMOS, mTouch, Precision Edge, and QUIET-WIRE are
devices in life support and/or safety applications is entirely at registered trademarks of Microchip Technology Incorporated
the buyer’s risk, and the buyer agrees to defend, indemnify and in the U.S.A.
hold harmless Microchip from any and all damages, claims, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut,
suits, or expenses resulting from such use. No licenses are BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
conveyed, implicitly or otherwise, under any Microchip dsPICDEM.net, Dynamic Average Matching, DAM, ECAN,
intellectual property rights unless otherwise stated. EtherGREEN, In-Circuit Serial Programming, ICSP, Inter-Chip
Connectivity, JitterBlocker, KleerNet, KleerNet logo, MiWi,
motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB,
MPLINK, MultiTRAK, NetDetach, Omniscient Code
Generation, PICDEM, PICDEM.net, PICkit, PICtail,
PureSilicon, RightTouch logo, REAL ICE, Ripple Blocker,
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Endurance, TSHARC, USBCheck, VariSense, ViewSpan,
WiperLock, Wireless DNA, and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
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SQTP is a service mark of Microchip Technology Incorporated
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Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and Silicon Storage Technology is a registered trademark of
Tempe, Arizona; Gresham, Oregon and design centers in California Microchip Technology Inc. in other countries.
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping GestIC is a registered trademarks of Microchip Technology
devices, Serial EEPROMs, microperipherals, nonvolatile memory and Germany II GmbH & Co. KG, a subsidiary of Microchip
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All other trademarks mentioned herein are property of their
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QUALITY MANAGEMENT SYSTEM © 2005-2016, Microchip Technology Incorporated, Printed in
CERTIFIED BY DNV the U.S.A., All Rights Reserved.
ISBN: 978-1-5224-0928-1
== ISO/TS 16949 ==

 2005-2016 Microchip Technology Inc. DS20001826D-page 29

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Tel: 678-957-9614
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Fax: 678-957-1455
China - Chengdu Tel: 91-20-3019-1500 Germany - Munich
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Fax: 86-28-8665-7889 Tel: 81-6-6152-7160 Fax: 49-89-627-144-44
Boston Fax: 81-6-6152-9310
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Tel: 86-23-8980-9588 Japan - Tokyo Tel: 39-0331-742611
Tel: 774-760-0087 Fax: 86-23-8980-9500
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Chicago Tel: 86-769-8702-9880 Korea - Daegu Tel: 39-049-7625286
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China - Guangzhou Tel: 82-53-744-4301 Netherlands - Drunen
Tel: 630-285-0071
Fax: 630-285-0075 Tel: 86-20-8755-8029 Fax: 82-53-744-4302 Tel: 31-416-690399
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Fax: 86-571-8792-8116 Fax: 82-2-558-5932 or Tel: 48-22-3325737
Tel: 216-447-0464
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Spain - Madrid
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Fax: 86-25-8473-2470 Tel: 60-4-227-8870
Detroit UK - Wokingham
China - Qingdao Fax: 60-4-227-4068
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Tel: 248-848-4000 Tel: 86-532-8502-7355 Philippines - Manila Fax: 44-118-921-5820
Fax: 86-532-8502-7205 Tel: 63-2-634-9065
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Tel: 86-21-5407-5533 Singapore
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China - Shenyang Fax: 65-6334-8850
Tel: 317-773-8323
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Fax: 86-24-2334-2393 Tel: 886-3-5778-366
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Tel: 949-462-9523 Tel: 86-755-8864-2200 Taiwan - Kaohsiung
Fax: 949-462-9608 Fax: 86-755-8203-1760 Tel: 886-7-213-7828
New York, NY China - Wuhan Taiwan - Taipei
Tel: 631-435-6000 Tel: 86-27-5980-5300 Tel: 886-2-2508-8600
Fax: 86-27-5980-5118 Fax: 886-2-2508-0102
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Tel: 408-735-9110 China - Xian Thailand - Bangkok
Tel: 86-29-8833-7252 Tel: 66-2-694-1351
Canada - Toronto
Fax: 86-29-8833-7256 Fax: 66-2-694-1350
Tel: 905-695-1980
Fax: 905-695-2078
06/23/16

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