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    Hiperrf Power Mosfets: Ixfh 12N50F Ixft 12N50F

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    dtramir
    This document provides technical specifications and performance ratings for IXYS Corporation's HiPerRFTM power MOSFET products. It includes maximum ratings, characteristic values at different test conditions, electrical and thermal characteristics, and package outlines. The MOSFETs are suitable for applications requiring high switching speeds such as DC-DC converters and resonant power supplies.

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    Hiperrf Power Mosfets: Ixfh 12N50F Ixft 12N50F

    Uploaded by

    dtramir
    37 views2 pages
    This document provides technical specifications and performance ratings for IXYS Corporation's HiPerRFTM power MOSFET products. It includes maximum ratings, characteristic values at different test conditions, electrical and thermal characteristics, and package outlines. The MOSFETs are suitable for applications requiring high switching speeds such as DC-DC converters and resonant power supplies.

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    IXFH12N50F

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    This document provides technical specifications and performance ratings for IXYS Corporation's HiPerRFTM power MOSFET products. It includes maximum ratings, characteristic values at different test conditions, electrical and thermal characteristics, and package outlines. The MOSFETs are suitable for applications requiring high switching speeds such as DC-DC converters and resonant power supplies.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    37 views2 pages

    Hiperrf Power Mosfets: Ixfh 12N50F Ixft 12N50F

    Uploaded by

    dtramir
    This document provides technical specifications and performance ratings for IXYS Corporation's HiPerRFTM power MOSFET products. It includes maximum ratings, characteristic values at different test conditions, electrical and thermal characteristics, and package outlines. The MOSFETs are suitable for applications requiring high switching speeds such as DC-DC converters and resonant power supplies.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    of 2

    Advanced Technical Information

    HiPerRFTM IXFH 12N50F VDSS = 500 V


    IXFT 12N50F ID25 = 12 A
    Power MOSFETs
    RDS(on) = 0.4 W
    F-Class: MegaHertz Switching
    trr £ 250 ns
    N-Channel Enhancement Mode
    Avalanche Rated, Low Qg, Low Intrinsic Rg
    High dV/dt, Low trr

    TO-247 AD (IXFH)

    Symbol Test Conditions Maximum Ratings


    (TAB)
    VDSS TJ = 25°C to 150°C 500 V
    VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V

    VGS Continuous ±20 V


    VGSM Transient ±30 V TO-268 (IXFT) Case Style
    ID25 TC = 25°C 12 A
    IDM TC = 25°C, pulse width limited by TJM 48 A
    IAR TC = 25°C 12 A
    G (TAB)
    EAR TC = 25°C 20 mJ
    S
    EAS TC = 25°C 300 mJ
    dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS 5 V/ns G = Gate, D = Drain,
    TJ £ 150°C, RG = 2 W S = Source, TAB = Drain

    PD TC = 25°C 180 W
    Features
    TJ -55 ... +150 °C l
    RF capable MOSFETs
    l
    TJM 150 °C Double metal process for low gate
    Tstg -55 ... +150 °C resistance
    l
    Low RDS (on) HDMOSTM process
    TL 1.6 mm (0.063 in.) from case for 10 s 300 °C l
    Rugged polysilicon gate cell structure
    Md Mounting torque TO-264 0.4/6 Nm/lb.in. l
    Unclamped Inductive Switching (UIS)
    Weight TO-247 6 g rated
    l
    TO-264 4 g Low package inductance
    - easy to drive and to protect
    l
    Fast intrinsic rectifier

    Symbol Test Conditions Characteristic Values Applications


    l
    (TJ = 25°C, unless otherwise specified) DC-DC converters
    l
    min. typ. max. Switched-mode and resonant-mode
    power supplies, >500kHz switching
    VDSS VGS = 0 V, ID = 250uA 500 V l
    DC choppers
    l
    VGS(th) VDS = VGS, ID = 2.5 mA 3.0 5.0 V 13.5 MHz industrial applications
    l
    IGSS VGS = ±20 V, VDS = 0 ±100 nA Pulse generation
    l
    Laser drivers
    l
    IDSS VDS = 0.8 • VDSS 50 mA RF amplifiers
    VGS = 0 V TJ = 125°C 1 mA
    Advantages
    RDS(on) VGS = 10 V, ID = 0.5 • ID25 0.4 W l
    Space savings
    Note 1 l
    High power density

    © 2000 IXYS All rights reserved 98737 (07/00)

    This datasheet has been downloaded from http://www.digchip.com at this page


    IXFH 12N50F
    IXFT 12N50F
    Symbol Test Conditions Characteristic Values
    (TJ = 25°C, unless otherwise specified)
    min. typ. max. TO-247 AD Outline

    gfs VDS = 10 V; ID = 0.5 • ID25 Note 1 6 10 S

    Ciss 1870 pF
    1 2 3 Terminals:
    Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 290 pF 1 - Gate
    2 - Drain
    Crss 90 pF 3 - Source
    Tab - Drain
    td(on) 11 ns
    tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 14 ns
    td(off) RG = 4.7 W (External), 28 ns
    tf 8 ns Dim. Millimeter Inches
    Min. Max. Min. Max.
    Qg(on) 54 nC A 4.7 5.3 .185 .209
    A1 2.2 2.54 .087 .102
    Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 18 nC A2 2.2 2.6 .059 .098
    Qgd 25 nC b 1.0 1.4 .040 .055
    b1 1.65 2.13 .065 .084
    b2 2.87 3.12 .113 .123
    RthJC 0.65 K/W C .4 .8 .016 .031
    RthCK (TO-247) 0.25 K/W D 20.80 21.46 .819 .845
    E 15.75 16.26 .610 .640
    e 5.20 5.72 0.205 0.225
    L 19.81 20.32 .780 .800
    L1 4.50 .177
    Source-Drain Diode Characteristic Values ÆP 3.55 3.65 .140 .144
    (TJ = 25°C, unless otherwise specified) Q 5.89 6.40 0.232 0.252
    Symbol Test Conditions min. typ. max. R 4.32 5.49 .170 .216
    S 6.15 BSC 242 BSC

    IS VGS = 0 V 12 A

    ISM Repetitive; 48 A TO-268 Outline


    pulse width limited by TJM

    VSD IF = IS, VGS = 0 V, Note 1 1.5 V

    trr 250 ns

    QRM IF = IS,-di/dt = 100 A/ms, VR = 100 V 0.8 mC

    IRM 6.5 A

    Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 %


    Dim. Millimeter Inches
    Min. Max. Min. Max.
    Min Recommended Footprint A 4.9 5.1 .193 .201
    A1 2.7 2.9 .106 .114
    A2 .02 .25 .001 .010
    b 1.15 1.45 .045 .057
    b2 1.9 2.1 .75 .83
    C .4 .65 .016 .026
    D 13.80 14.00 .543 .551
    E 15.85 16.05 .624 .632
    E1 13.3 13.6 .524 .535
    e 5.45 BSC .215 BSC
    H 18.70 19.10 .736 .752
    L 2.40 2.70 .094 .106
    L1 1.20 1.40 .047 .055

    L2 1.00 1.15 .039 .045


    L3 0.25 BSC .010 BSC
    L4 3.80 4.10 .150 .161

    IXYS reserves the right to change limits, test conditions, and dimensions.
    IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
    4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

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