Location via proxy:   [ UP ]  
[Report a bug]   [Manage cookies]                
Scribd Logo
Upload

Welcome to Scribd!

  • 155 views

    C4977 - ETCf GD

    Uploaded by

    Carlos
    This document provides specifications for the ISC 2SC4977 silicon NPN power transistor. It can withstand collector-emitter voltages up to 400V, has fast switching speeds, and a typical saturation voltage of 0.8V or less at 4A collector current. It is designed for high-voltage, high-speed power switching applications like power supplies, inverters, and DC-DC converters operating at 115V and 220V. Absolute maximum ratings and electrical characteristics are provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    C4977 - ETCf GD

    Uploaded by

    Carlos
    155 views2 pages
    This document provides specifications for the ISC 2SC4977 silicon NPN power transistor. It can withstand collector-emitter voltages up to 400V, has fast switching speeds, and a typical saturation voltage of 0.8V or less at 4A collector current. It is designed for high-voltage, high-speed power switching applications like power supplies, inverters, and DC-DC converters operating at 115V and 220V. Absolute maximum ratings and electrical characteristics are provided.

    Original Description:

    f fgd

    Original Title

    C4977_ETCf gd

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document provides specifications for the ISC 2SC4977 silicon NPN power transistor. It can withstand collector-emitter voltages up to 400V, has fast switching speeds, and a typical saturation voltage of 0.8V or less at 4A collector current. It is designed for high-voltage, high-speed power switching applications like power supplies, inverters, and DC-DC converters operating at 115V and 220V. Absolute maximum ratings and electrical characteristics are provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    155 views2 pages

    C4977 - ETCf GD

    Uploaded by

    Carlos
    This document provides specifications for the ISC 2SC4977 silicon NPN power transistor. It can withstand collector-emitter voltages up to 400V, has fast switching speeds, and a typical saturation voltage of 0.8V or less at 4A collector current. It is designed for high-voltage, high-speed power switching applications like power supplies, inverters, and DC-DC converters operating at 115V and 220V. Absolute maximum ratings and electrical characteristics are provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    INCHANGE Semiconductor isc Product Specification

    isc Silicon NPN Power Transistor 2SC4977

    DESCRIPTION
    ·Collector-Emitter Sustaining Voltage-
    : VCEO(SUS)= 400V(Min)
    ·Fast Switching Speed
    ·Collector-Emitter Saturation Voltage-
    : VCE(sat)= 0.8V(Max.)@ IC= 4.0A

    APPLICATIONS
    ·Designed for use in high-voltage, high-speed , power
    switching in inductive circuit , they are particularly suited
    for 115 and 220V switchmode applications such as swit-
    ching regulator’s, inverters, DC-DC converter.

    ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


    SYMBOL PARAMETER VALUE UNIT

    VCBO Collector-Base Voltage 450 V

    VCEO Collector-Emitter Voltage 400 V

    VEBO Emitter-Base Voltage 8 V

    IC Collector Current-Continuous 7 A

    ICM Collector Current-Peak 14 A

    IB Base Current-Continuous 2 A

    Collector Power Dissipation


    PC 40 W
    @ TC=25℃

    TJ Junction Temperature 150 ℃

    Tstg Storage Temperature Range -55~150 ℃

    THERMAL CHARACTERISTICS
    SYMBOL PARAMETER MAX UNIT

    Rth j-c Thermal Resistance,Junction to Case 3.125 ℃/W

    isc Website：www.iscsemi.cn

    Free Datasheet http://www.datasheet4u.com/


    INCHANGE Semiconductor isc Product Specification

    isc Silicon NPN Power Transistor 2SC4977

    ELECTRICAL CHARACTERISTICS
    TC=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 400 V

    V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 450 V

    V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 8 V

    VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A 0.8 V

    VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A 1.2 V

    ICBO Collector Cutoff Current VCB= 450V; IE= 0 100 μA

    IEBO Emitter Cutoff Current VEB= 8V; IC= 0 100 μA

    hFE DC Current Gain IC= 4A ; VCE= 5V 10

    Switching times

    ton Turn-on Time 1.0 μs

    IC= 5A , IB1= -IB2=1A


    tstg Storage Time 2.5 μs
    RL= 30Ω; VCC= 150V

    tf Fall Time 0.5 μs

    isc Website：www.iscsemi.cn 2

    You might also like