KSA1015

KSA1015

LOW FREQUENCY AMPLIFIER

• Collector-Base Voltage : VCBO= -50V
• Complement to KSC1815

1 TO-92
1. Emitter 2. Collector 3. Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -150 mA
IB Base Current -50 mA
PC Collector Power Dissipation 400 mW
TJ Junction Temperature 125 °C
TST9 Storage Temperature -65 ~ 150 °C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC= -100µA, IE=0 -50 V
BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -50 V
BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 V
ICBO Collector Cut-off Current VCB= -50V, IE=0 -0.1 µA
IEBO Emitter Cut-off Current VEB= -5V, IC=0 -0.1 µA
hFE1 DC Current Gain VCE= -6V, IC= -2mA 70 400
hFE2 VCE= -6V, IC= -150mA 25
VCE (sat) Collector-Emitter Saturation Voltage IC= -100mA, IB= -10mA -0.1 -0.3 V
VBE (sat) Base-Emitter Saturation Voltage IC= -100mA, IB= -10mA -1.1 V
fT Current Gain Bandwidth Product VCE= -10V, IC=-1mA 80 MHz
Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 4 7 pF
NF Noise Figure VCE= -6V, IC= -0.1mA 0.5 6 dB
f=100Hz, RG=10kΩ

hFE Classification
Classification O Y GR
hFE1 70 ~ 140 120 ~ 240 200 ~ 400

©2002 Fairchild Semiconductor Corporation Rev. A3, September 2002

 KSA1015
Typical Characteristics

-50 1000

-45 VCE = -6V

IB = -400µ A
IC[mA], COLLECTOR CURRENT

-40 IB = -350µ A

hFE, DC CURRENT GAIN

-35 IB = -300µ A
100
IB = -250µ A
-30

-25 IB = -200µ A

-20 IB = -150µ A
10
-15
IB = -100µ A
-10
IB = -50µ A
-5

0 1
0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -0.1 -1 -10 -100

VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

VBE(sat)[V], VCE(sat)[V], SATURATION VOLTAGE

-10 -100
IC=10IB
VCE =-6V
IC[mA], COLLECTOR CURRENT

-1 -10
VBE(sat)

V CE(sat)
-0.1 -1

-0.01 -0.1
-0.1 -1 -10 -100 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2

IC[mA], COLLECTOR CURRENT VBE (sat)[V], BASE-EMITTER VOLTAGE

Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage

Collector-Emitter Saturation Voltage

1000

f=1MHz VCE=-6V
IE =0
10
Cob[pF], CAPACITANCE

hFE, DC CURRENT GAIN

100

1
-1 -10 -100 10
-1 -10

VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product

©2002 Fairchild Semiconductor Corporation Rev. A3, September 2002

 KSA1015
Package Dimensions

TO-92
+0.25
4.58 –0.15

4.58 ±0.20

0.46 ±0.10
14.47 ±0.40

+0.10
1.27TYP 1.27TYP 0.38 –0.05
[1.27 ±0.20] [1.27 ±0.20]

3.60 ±0.20
3.86MAX

(0.25)
+0.10
0.38 –0.05
1.02 ±0.10

(R2.29)

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. A3, September 2002

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2002 Fairchild Semiconductor Corporation Rev. I1

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