Location via proxy:   [ UP ]  
[Report a bug]   [Manage cookies]                
Scribd Logo
Upload

Welcome to Scribd!

  • 594 views

    Transistor (PNP) : 1. Base 2. Emitter 3. Collector Z Z

    Uploaded by

    Raj Choudhary
    This document summarizes the specifications and characteristics of a SOT-23 packaged PNP transistor, the S8550. Key details include: 1. It has a maximum collector current of 0.5A and is complementary to transistor S8050. 2. Electrical characteristics are provided, including a DC current gain of 120-350 and collector-emitter saturation voltage of -0.6V at -500mA collector current. 3. Maximum ratings specify the transistor can withstand voltages up to -40V collector-base and -25V collector-emitter, as well as a junction temperature of 150°C.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Transistor (PNP) : 1. Base 2. Emitter 3. Collector Z Z

    Uploaded by

    Raj Choudhary
    594 views2 pages
    This document summarizes the specifications and characteristics of a SOT-23 packaged PNP transistor, the S8550. Key details include: 1. It has a maximum collector current of 0.5A and is complementary to transistor S8050. 2. Electrical characteristics are provided, including a DC current gain of 120-350 and collector-emitter saturation voltage of -0.6V at -500mA collector current. 3. Maximum ratings specify the transistor can withstand voltages up to -40V collector-base and -25V collector-emitter, as well as a junction temperature of 150°C.

    Original Description:

    Original Title

    s8550-2ty-datasheet

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document summarizes the specifications and characteristics of a SOT-23 packaged PNP transistor, the S8550. Key details include: 1. It has a maximum collector current of 0.5A and is complementary to transistor S8050. 2. Electrical characteristics are provided, including a DC current gain of 120-350 and collector-emitter saturation voltage of -0.6V at -500mA collector current. 3. Maximum ratings specify the transistor can withstand voltages up to -40V collector-base and -25V collector-emitter, as well as a junction temperature of 150°C.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    594 views2 pages

    Transistor (PNP) : 1. Base 2. Emitter 3. Collector Z Z

    Uploaded by

    Raj Choudhary
    This document summarizes the specifications and characteristics of a SOT-23 packaged PNP transistor, the S8550. Key details include: 1. It has a maximum collector current of 0.5A and is complementary to transistor S8050. 2. Electrical characteristics are provided, including a DC current gain of 120-350 and collector-emitter saturation voltage of -0.6V at -500mA collector current. 3. Maximum ratings specify the transistor can withstand voltages up to -40V collector-base and -25V collector-emitter, as well as a junction temperature of 150°C.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    SOT-23

    S8550 TRANSISTOR (PNP)

    FEATURES 1. BASE

    z Complimentary to S8050 2. EMITTER


    3. COLLECTOR
    z Collector current: IC=0.5A

    MARKING : 2TY

    MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

    Symbol Parameter Value Units


    VCBO Collector-Base Voltage -40 V
    VCEO Collector-Emitter Voltage -25 V
    VEBO Emitter-Base Voltage -5 V
    IC Collector Current -Continuous -0.5 A
    PC Collector Power Dissipation 0.3 W
    Tj Junction Temperature 150 ℃
    Tstg Storage Temperature -55-150 ℃

    ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

    Parameter Symbol Test conditions MIN MAX UNIT

    Collector-base breakdown voltage V(BR)CBO IC = -100μA, IE=0 -40 V

    Collector-emitter breakdown voltage V(BR)CEO IC =-1mA, IB=0 -25 V

    Emitter-base breakdown voltage V(BR)EBO IE= -100μA, IC=0 -5 V

    Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 μA

    Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 μA

    Emitter cut-off current IEBO VEB= -3V, IC=0 -0.1 μA

    hFE(1) VCE= -1V, IC= -50mA 120 350


    DC current gain
    hFE(2) VCE= -1V, IC= -500mA 50

    Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.6 V

    Base-emitter saturation voltage VBE(sat) IC=-500mA, IB= -50mA -1.2 V

    VCE= -6V, IC= -20mA


    Transition frequency fT 150 MHz
    f=30MHz
    CLASSIFICATION OF hFE(1)
    Rank L H
    Range 120-200 200-350
    Typical Characteristics S8550

    You might also like