LT1305

Micropower High Power

DC/DC Converter with
Low-Battery Detector

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FEATURES DESCRIPTIO
■ 5V at 400mA from 2V Input The LT ®1305 is a micropower step-up DC/DC converter
■ Supply Voltage As Low As 1.8V that uses Burst ModeTM operation. Similar to the LT1303,
■ 120µA Quiescent Current the LT1305 features a 2A internal low-loss switch and can
■ Low-Battery Detector deliver up to four times the output power of the LT1303.
■ Low VCESAT Switch: 310mV at 2A Typ Quiescent current is only 120µA and the Shutdown pin
■ Uses Inexpensive Surface Mount Inductors further reduces current to 10µA. A low-battery detector
■ 8-Lead SO Package
provides an open-collector output that goes low when the
input voltage drops below a preset level. The LT1305 is
UO available in an 8-pin SO, easing board space requirements.
APPLICATI S , LTC and LT are registered trademarks of Linear Technology Corporation.
Burst Mode is a trademark of Linear Technology Corporation
■ 2-Cell and 3-Cell to 5V Conversion
■ EL Panel Drivers
■ Portable Instruments

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TYPICAL APPLICATI

2-Cell and 3-Cell to 5V/400mA DC/DC Converter

with Low-Battery Detect Efficiency
L1 90
10µH D1

LOW BATTERY VIN = 4.00V

316k GOES LOW AT
1% VIN SW 100k VBAT = 2.2V VIN = 3.00V
80
EFFICIENCY (%)

LBI LBO
2 TO 3
+ C1 412k 301k
1% LT1305
CELLS 220µF 1% VOUT VIN = 2.00V
SHUTDOWN SHDN FB 5V VIN = 2.50V
GND PGND 100k C2
+ 400mA
70
1% 220µF

C1, C2: AVX TPSE227010R0100 LT1305 • TA03

D1: MOTOROLA MBRS130LT3
L1: COILCRAFT D03316-103 60
1 10 100 1000
LOAD CURRENT (mA)
LT1305 • TA02

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LT1305
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ABSOLUTE AXI U RATI GS PACKAGE/ORDER I FOR ATIO
VIN Voltage .............................................................. 10V
ORDER PART
SW1 Voltage ............................................................ 25V TOP VIEW
NUMBER
FB Voltage ............................................................... 10V GND 1 8 PGND

Shutdown Voltage ................................................... 10V LBO 2 7 SW LT1305CS8

LBO Voltage ............................................................. 10V SHDN 3 6 VIN

LBI Voltage .............................................................. 10V FB 4 5 LBI

Maximum Power Dissipation ............................. 500mW S8 PACKAGE

S8 PART MARKING
Operating Temperature Range ..................... 0°C to 70°C 8-LEAD PLASTIC SO

Storage Temperature Range ................. – 65°C to 150°C TJMAX = 100°C, θJA = 80°C/ W
1305
Lead Temperature (Soldering, 10 sec).................. 300°C
Consult factory for Industrial and Military grade parts.

ELECTRICAL CHARACTERISTICS TA = 25°C, VIN = 2.0V, unless otherwise noted.

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
IQ Quiescent Current VSHDN = 0.5V, VFB = 2V ● 120 200 µA
VSHDN = 1.8V ● 7 15 µA
VIN Input Voltage Range 1.8 1.55 V
● 2.0 V
Feedback Voltage ● 1.22 1.24 1.26 V
Comparator Hysteresis ● 6 12.5 mV
Feedback Pin Bias Current VFB = 1V ● 7 20 nA
Oscillator Frequency Current Limit Not Asserted 120 155 185 kHz
Oscillator TC 0.2 %/°C
DC Maximum Duty Cycle ● 75 86 95 %
tON Switch On Time Current Limit Not Asserted 5.6 µs
Output Line Regulation 1.8V < VIN < 6V ● 0.06 0.15 %/V
VCESAT Switch Saturation Voltage ISW = 1A ● 140 280 mV
Switch Leakage Current VSW = 5V, Switch Off ● 0.1 10 µA
Peak Switch Current VIN = 2V 1.35 2 2.35 A
● 1.20 2.50 A
VIN = 5V 1.15 2.15 A
LBI Trip Voltage (Note 2) ● 1.21 1.24 1.27 V
LBI Input Bias Current VLBI = 1V ● 7 20 nA
LBO Output Low ILOAD = 100µA ● 0.11 0.4 V
LBO Leakage Current VLBI = 1.3V, VLBO = 5V ● 0.1 5 µA
VSHDNH Shutdown Pin High ● 1.8 V
VSHDNL Shutdown Pin Low 0.5 V
ISHDN Shutdown Pin Bias Current VSHDN = 5V ● 8.0 20 µA
VSHDN = 2V ● 3.0 µA
VSHDN = 0V ● 0.1 1 µA

The ● denotes specifications which apply over the 0°C to 70°C operating Note 2: Low-battery detector comparator is inoperative when device is in
temperature range. shutdown.
Note 1: Hysteresis specified is DC. Output ripple may be higher if output
capacitance is insufficient or capacitor ESR is excessive.

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 LT1305
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TYPICAL PERFORMANCE CHARACTERISTICS
Switch On Time Oscillator Frequency Maximum Duty Cycle
8 200 100
190 95
7
180 90
170 85

FREQUENCY (kHz)
6

DUTY CYCLE (%)

ON TIME (µs)

160 80
5 150 75
140 70
4
130 65

3 120 60
110 55
2 100 50
–50 – 25 0 25 50 75 100 –50 –25 0 25 50 75 100 –50 –25 0 25 50 75 100
TEMPERATURE (°C) TEMPERATURE (°C) TEMPERATURE (°C)
LT1305 • G01 LT1305 • G02 LT1305 • G03

Quiescent Current Quiescent Current Current Limit

200 500 2.4
SWITCH OFF TA = 25°C
190 VIN = 2V SWITCH OFF
2.2
400

PEAK SWITCH CURRENT (A)

180
QUIESCENT CURRENT (µA)
QUIESCENT CURRENT (µA)

170 2.0

160 300
1.8
150
200 1.6
140
130 1.4
120 100
1.2
110
100 0 1.0
–50 –25 0 25 50 75 100 0 2 4 6 8 10 – 50 –25 0 25 50 75 100
TEMPERATURE (°C) INPUT VOLTAGE (V) TEMPERATURE (˚C)
LT1305 • G04 LT1305 • G05 LT1305 • G06

LBI Pin Bias Current FB Pin Bias Current FB Voltage

20 20 1.250
18 18 1.245
16 16 1.240
FEEDBACK VOLTAGE (V)
BIAS CURRENT (nA)
BIAS CURRENT (nA)

14 14 1.235
12 12 1.230
10 10 1.225
8 8 1.220
6 6 1.215
4 4 1.210
2 2 1.205
0 0 1.200
–50 –25 0 25 50 75 100 –50 –25 0 25 50 75 100 –50 –25 0 25 50 75 100
TEMPERATURE (°C) TEMPERATURE (°C) TEMPERATURE (°C)
LT1305 • G07 LT1305 • G08 LT1305 • G09

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 LT1305
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TYPICAL PERFORMANCE CHARACTERISTICS
Low-Battery Detect Trip Point Switch Saturation Voltage Switch Saturation Voltage
1.250 400 300
TA = 25°C ISW = 1A

SWITCH SATURATION VOLTAGE (mV)

1.245

SWITCH SATURATION VOLTAGE (mV)

350
250
1.240
300
1.235 200
LBI VOLTAGE (V)

250
1.230
1.225 200 150
1.220 150
100
1.215
100
1.210 50
50
1.205
1.200 0 0
–50 –25 0 25 50 75 100 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 – 50 – 25 0 25 50 75 100
TEMPERATURE (°C) SWITCH CURRENT (A) TEMPERATURE (°C)
LT1305 • G10 LT1305 • F12 LT1305 • G13

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PI FU CTIO S
GND (Pin 1): Signal Ground. Tie to PGND under the LBI (Pin 5): Low-Battery Comparator Input. When voltage
package. on this pin is below 1.24V, LBO is low.
LBO (Pin 2): Open-Collector Output of Comparator C3. VIN (Pin 6): Supply Pin. Must be bypassed with a large
Can sink 100µA. High impedance when device is in shut- value capacitor to gound. Keep bypass within 0.2" of the
down. device.
SHDN (Pin 3): Shutdown. Pull high to shut down the SW (Pin 7): Switch Pin. Connect inductor and diode here.
LT1305. Ground for normal operation. Keep layout short and direct to minimize radio frequency
interference.
FB (Pin 4): Feedback Input. Connects to main comparator
C1 input. PGND (Pin 8): Power Ground. Tie to signal ground (pin 1)
under the package. Bypass capacitor from VIN should be
tied directly to PGND within 0.2" of the device.

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 LT1305
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BLOCK DIAGRAM
L1 D1
VIN
+ VIN SW
+
C5 6 7 C4

CURRENT 36mV
COMPARATOR
+
R1
C2
3Ω
R1 HYSTERETIC –
COMPARATOR
FB OFF
4 – Q2
A3 1× Q1
C1 OSCILLATOR
DRIVER 160×
REFERENCE
R2
1.24V
+

–
C3
+
GND LBI LBO SHUTDOWN
PGND
1 5 2 3 8

LT1305 • F01

Figure 1. LT1305 Block Diagram

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OPERATION
Operation of the LT1305 is best understood by referring to until VOUT decreases enough to force C1’s output high, and
the Block Diagram in Figure 1. When C1’s negative input, the entire cycle repeats. Figure 2 details relevant wave-
related to the output voltage by the appropriate resistor- forms. C1’s cycling causes low-to-mid-frequency ripple
divider ratio, is higher than the 1.24V reference voltage, voltage on the output. Ripple can be reduced by making the
C1’s output is low. C2, A3 and the oscillator are turned off, output capacitor large. The 220µF unit specified results in
drawing no current. Only the reference and C1 consume ripple of 50mV to 100mV on the 5V output. Paralleling two
current, typically 120µA. When C1’s negative input drops capacitors will decrease ripple by approximately 50%.
below 1.24V and overcomes C1’s 6mV hysteresis, C1’s
output goes high, enabling the oscillator, current compara- VOUT
100mV/DIV
tor C2 and driver A3. Quiescent current increases to 2mA AC COUPLED
as the device goes into active switching mode. Q1 then
turns on in controlled saturation for nominally 6µs or until VSW
5V/DIV
current comparator C2 trips, whichever comes first. The
switch then turns off for approximately 1.5µs, then turns on
IL
again. The LT1305’s switching causes current to alter- 1A/DIV
nately build up in L1 and dump into output capacitor C4 via
D1, increasing the output voltage. When the output is high LT1305 • F02
50µs/DIV
enough to cause C1’s output to go high, switching action
ceases. Capacitor C4 is left to supply current to the load Figure 2. Burst Mode Operation

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LT1305
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OPERATION
If switch current reaches 2A, causing C2 to trip, switch on Inductor Selection
time is reduced and off time increases slightly. This allows
Inductors used with the LT1305 must fulfill two require-
continuous operation during bursts. C2 monitors the ments. First, the inductor must be able to handle current
voltage across 3Ω resistor R1 which is directly related to of 2A to 2.5A without runaway saturation. Rod or drum
the switch current. Q2’s collector current is set by the
core units usually saturate gradually and it is acceptable to
emitter-area ratio to 0.6% of Q1’s collector current. When exceed manufacturer’s published saturation current by
R1’s voltage drop exceeds 36mV, corresponding to 2A 20% or so. Second, the unit must have low DCR, under
switch current, C2’s output goes high, truncating the on
0.05Ω so that copper loss is kept low and excess heating
time portion of the oscillator cycle and increasing off time is avoided. Inductance value is not critical. Generally, for
to about 2µs. Response time of C2, which determines low voltage inputs below 3V a 10µH inductor is recom-
minimum on time, is approximately 300ns. mended (such as Coilcraft DO3316-103). For inputs above
4V to 5V use a 22µH unit (such as Coilcraft DO3316-223).
Low-Battery Detector
Switching frequency can reach up to 300kHz so the core
The low-battery detector is enabled when SHDN is low and material should be able to operate at high frequency
disabled when SHDN is high. The comparator has no without excessive core loss. Ferrite or molypermalloy
hysteresis built in, but hysteresis can be added by cores are a better choice than powdered iron. If EMI is a
connecting a high-value resistor from LBI to LBO as concern, a toroidal inductor is suggested, such as
shown in Figure 3. The internal reference can be accessed Coiltronics CTX20-4.
via the comparator as shown in Figure 4.
Capacitor Selection
VBAT 5V
LT1305 Output and input capacitors should have low ESR for best
R4 performance. Inexpensive aluminum electrolytics some-
47k
R1 1.24V – times have ESR above 1Ω, even for relatively large values
LBO
LBI such as 100µF, 16V units. Since the LT1305 has a 2A
+
current limit, 2V of ripple voltage would result with such a
R2
49.9k capacitor at the output. Keep ESR below 0.05Ω to 0.1Ω for
1% R3
2M reasonable ripple voltage. Tantalum capacitors such as
R1 = (VTRIP –1.24V) (43.5k)
AVX TPS series or Sprague 593D have low ESR and are
HYSTERESIS ≈ 30mV LT1305 • F03 surface mount components. For lowest ESR, use Sanyo
OS-CON units (OS-CON is also available from Vishay).
Figure 3. R3 Adds Hysteresis to Low-Battery Detector These capacitors have superior ESR, small size and per-
form well at cold temperatures.
VIN

100k VIN
Diode Selection
2N3906 LBO A 2A Schottky diode such as Motorola MBRS130LT3 is a
LT1305 good choice for the rectifier diode. A 1N5821 or
VREF R2
OUTPUT LBI MBRS130T3 are suitable as well. Do not use “general
+ GND purpose” diodes such as 1N4001. They are much too slow
2.2µF R1
for use in switching regulator applications.

( )
VREF = 1.24V 1 + R2
R1
VIN ≥ VREF + 200mV
R1 + R2 ≈ 33k LT1305 • F04

Figure 4. Accessing Internal Reference

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 LT1305
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TYPICAL APPLICATIONS N
Setting Output Voltage 4-Cell-to-5V Converter
L1*
L1
1N5817
3.5V to 6.5V 22µH +100µF** MBRS130LT3
VIN

VIN SW VIN SW
VOUT + 5V
100µF 400mA
+ R2 LT1305
100µF LT1305 309k
+ 4 CELLS
+
FB 220µF SHDN FB 22µH* 150µF**
GND PGND GND PGND
R1 100k
SHUTDOWN

( )
VOUT = 1.24V 1 + R2
R1
LT1305 • TA03 * COILCRAFT DO3316-223 OR
SUMIDA CD105-220
** SANYO OS-CON
LT1305 • TA05

5V Step-Up Converter with Reference Output

10µH* MBRS130LT3
1.8V TO 4.5V
INPUT
100k
VIN SW
5V
2N3906 LBO
+ 400mA
100µF LT1305 309k
VREF
OUTPUT LBI FB +
220µF
1.24V + GND PGND
2.2µF 33k 100k

*COILCRAFT DO3316-103 LT1305 • TA06

EL Panel Driver

T1** MUR160
VIN 1:15
1.5V TO 8V 4, 5 •6
C1*
50pF
10Ω • 10
1, 2
1N5818
4.7µF

3.3M +160V
VIN SW EL PANEL
+ 3.3M 1k
47µF ††
1/2W
0.1µF LT1305 3.3M 1N4148
CERAMIC 10k
ZETEX
SHDN FB
FZT658 CPANEL ≤ 100nF
GND PGND
51k
SHUTDOWN
R1†
25k

LT1305 • TA04

100Hz TO 1000Hz
SQUARE WAVE
DRIVE
*ADD C1 FOR OPEN-PANEL PROTECTION
**DALE LPE5047-A132 1:15 TURNS RATIO
10µH PRIMARY INDUCTANCE (605) 666-9301
†
R1 ADJUSTS VOUT 83VRMS TO 115VRMS
††
AVX TPS OR SANYO OS-CON MUST HAVE ESR ≤ 0.15Ω

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Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
LT1305
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PACKAGE DESCRIPTION Dimensions in inches (millimeters) unless otherwise noted.

S8 Package
8-Lead Plastic SOIC

0.189 – 0.197*
(4.801 – 5.004)
8 7 6 5

0.228 – 0.244 0.150 – 0.157*

(5.791 – 6.197) (3.810 – 3.988)

1 2 3 4

0.010 – 0.020
× 45° 0.053 – 0.069
(0.254 – 0.508)
(1.346 – 1.752)
0.004 – 0.010
0.008 – 0.010
0°– 8° TYP (0.101 – 0.254)
(0.203 – 0.254)

0.016 – 0.050
0.014 – 0.019 0.050
0.406 – 1.270
(0.355 – 0.483) (1.270)
BSC SO8 0294

*THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.

MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.006 INCH (0.15mm).

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LT/GP 0595 10K • PRINTED IN USA

Linear Technology Corporation
8 1630 McCarthy Blvd., Milpitas, CA 95035-7487
(408) 432-1900 ● FAX: (408) 434-0507 ● TELEX: 499-3977  LINEAR TECHNOLOGY CORPORATION 1995