4A/2A Dual Channel Synchronous Step-Down Switcher With Integrated FET
4A/2A Dual Channel Synchronous Step-Down Switcher With Integrated FET
4A/2A Dual Channel Synchronous Step-Down Switcher With Integrated FET
1FEATURES APPLICATIONS
2• D-CAP2™ Control Mode • Point-of-Load Regulation in Low Power
– Fast Transient Response Systems for Wide Range of Applications
– No External Parts Required For Loop – Digital TV Power Supply
Compensation – Networking Home Terminal
– Compatible with Ceramic Output – Digital Set Top Box (STB)
Capacitors – DVD Player/Recorder
• Wide Input Voltage Range : 4.5 V to 18 V – Gaming Consoles and Other
• Output Voltage Range : 0.76V to 7V
• Highly Efficient Integrated FETs Optimized for DESCRIPTION
Low Duty Cycle Applications The TPS54494 is a dual, adaptive on-time D-CAP2™
– 90 mΩ (High Side) and 60 mΩ (Low Side) mode synchronous buck converter. The TPS54494
enables system designers to complete the suite of
• High Initial Reference Accuracy various end equipment’s power bus regulators with a
• 4A CH1 / 2A CH2 Continuous Load Current cost effective, low component count, and low standby
• Low-Side rDS(on) Loss-Less Current Sensing current solution. The main control loops of the
TPS54494 use the D-CAP2™ mode control which
• Fixed Soft Start : 1 ms provides a very fast transient response with no
• Non-Sinking Pre-Biased Soft Start external compensation components. The adaptive on-
• Powergood time control supports seamless transition between
PWM mode at higher load conditions and Eco-
• 700 kHz Switching Frequency mode™ operation at light loads. Eco-mode™ allows
• Cycle-by-Cycle Over-Current Limit Control the TPS54494 to maintain high efficiency during
• OCL/UVLO/TSD Protections lighter load conditions. The TPS54494 is able to
adapt to both low equivalent series resistance (ESR)
• Hiccup Timer for Overload Protection
output capacitors such as POSCAP or SP-CAP, and
• Adaptive Gate Drivers with Integrated Boost ultra-low ESR, ceramic capacitors. The device
PMOS Switch provides convenient and efficient operation with input
• OCP Constant Due To Thermally Compensated voltages from 4.5V to 18V.
rDS(on) with 4000ppm/℃℃ The TPS54494 is available in a 4.4 mm × 5 mm 16-
• 16-Pin HTSSOP, 16-Pin VQFN pin TSSOP (PWP) and 4 mm x 4 mm 16-pin VQFN
• Auto-Skip Eco-mode™ for High Efficiency at (RSA) package, and is specified for an ambient
temperature range from –40°C to 85°C.
Light Load
Input Voltage
6 PG1 PG2 11
R11 (PowerPAD)
R12
7 VFB1 VFB2 10
R21
C4 R22
8 GND VREG5 9 t - Time - 100 ms/div
PGND
SGND SGND
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2 D-CAP2, Eco-mode, Eco-Mode are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date. Copyright © 2012–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
TPS54494
SLVSBH1B – JUNE 2012 – REVISED AUGUST 2013 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com
(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
(3) All packaging options have Cu NIPDAU lead/ball finish.
VALUE UNIT
VIN1, VIN2, EN1, EN2 –0.3 to 20
VBST1, VBST2 –0.3 to 26
VBST1, VBST2 (10ns transient) –0.3 to 28
Input voltage range VBST1–SW1 , VBST2–SW2 –0.3 to 6.5 V
VFB1, VFB2 –0.3 to 6.5
SW1, SW2 –2 to 20
SW1, SW2 (10ns transient) –3 to 22
VREG5, PG1, PG2 –0.3 to 6.5
Output voltage range V
PGND1, PGND2 –0.3 to 0.3
Human Body Model (HBM) 2 kV
Electrostatic discharge
Charged Device Model (CDM) 500 V
TA Operating ambient temperature range –40 to 85 °C
TSTG Storage temperature range –55 to 150 °C
TJ Junction temperature range –40 to 150 °C
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" are not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to IC GND terminal.
THERMAL INFORMATION
TPS54494
THERMAL METRIC (1) UNITS
PWP (16) PINS RSA (16) PINS
θJA Junction-to-ambient thermal resistance 41.4 32.8
θJCtop Junction-to-case (top) thermal resistance 27.8 35.4
θJB Junction-to-board thermal resistance 23.2 9.9
°C/W
ψJT Junction-to-top characterization parameter 0.9 0.4
ψJB Junction-to-board characterization parameter 23.0 10.0
θJCbot Junction-to-case (bottom) thermal resistance 3.5 1.6
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
DEVICE INFORMATION
PGND2
SW2
PG2
EN2
1 VIN1 VIN2 16
16 15 14 13
2 VBST1 VBST2 15
VBST2 1 12 VFB2
3 SW1 SW 2 14
VIN2 2 11 VREG5
4 PGND1 TPS54494 PGND 2 13
PowerPAD
6 PG1 PG2 11
VBST1 4 9 VFB1
(PowerPAD)
7 VFB1 VFB2 10
5 6 7 8
SW1
PGND1
PG1
EN1
8 GND VREG5 9
VBST1, 2 4 I Supply input for high-side NFET gate drive circuit. Connect 0.1µF ceramic
capacitor between VBSTx and SWx pins. An internal diode is connected
VBST2 15 1 I
between VREG5 and VBSTx
SW1 3 5 I/O Switch node connections for both the high-side NFETs and low–side NFETs.
SW2 14 16 I/O Input of current comparator.
PGND1 4 6 I/O
Ground returns for low-side MOSFETs. Input of current comparator.
PGND2 13 15 I/O
EN1 5 7 I
Enable. Pull High to enable according converter.
EN2 12 14 I
PG1 6 8 O Open drain power good outputs. Low indicates the corresponding output
PG2 11 13 O voltage is out of regulation.
VFB1 7 9 I
D-CAP2 feedback inputs. Connect to output voltage with resistor divider.
VFB2 10 12 I
GND 8 10 I/O Signal GND. Connect sensitive SSx and VFBx returns to GND at a single
point.
Output of 5.5V linear regulator. Bypass to GND with a high-quality ceramic
VREG5 9 11 O
capacitor of at least 1 µF. VREG5 is active when ENx is high.
Exposed Thermal Back side Back side I/O Thermal pad of the package. Must be soldered to achieve appropriate
Pad dissipation. Must be connected to GND.
- 16%
PG VIN1
Comp
+16% VIN1
PG1
VBST1
- 32 UV1 Control logic
0.1 µF
VO1
SW1
Ref1
Ref_OCL PGND1
SW1
SW1
EN1 OCP1 ZC1
EN
EN2
Logic EN Logic
VIN1
GND VREG5
CH1 Min-off timer 5VREG
1.0 µF
- 32 UV2 VBST2
Control logic
0.1 µF
VO2
SW2
VFB2 Comp
Ref_OCL PGND2
SW2 SW2
- 16%
PG ZC2
Comp
+16%
PG2 OCP2
OVERVIEW
The TPS54494 is a 4A/2A dual synchronous step-down (buck) converter with two integrated N-channel
MOSFETs for each channel. It operates using D-CAP2™ control mode. The fast transient response of D-CAP2™
control reduces the required output capacitance to meet a specific level of performance. Proprietary internal
circuitry allows the use of low ESR output capacitors including ceramic and special polymer types.
DETAILED DESCRIPTION
PWM Operation
The main control loop of the TPS54494 is an adaptive on-time pulse width modulation (PWM) controller that
supports a proprietary D-CAP2™ control mode. D-CAP2™ control combines constant on-time control with an
internal compensation circuit for pseudo-fixed frequency and low external component count configuration with
both low ESR and ceramic output capacitors. It is stable even with virtually no ripple at the output.
At the beginning of each cycle, the high-side MOSFET is turned on. This MOSFET is turned off when the internal
timer expires. This timer is set by the converter’s input voltage, VINx, and the output voltage, VOx, to maintain a
pseudo-fixed frequency over the input voltage range hence it is called adaptive on-time control. The timer is reset
and the high-side MOSFET is turned on again when the feedback voltage falls below the nominal output voltage.
An internal ramp is added to the reference voltage to simulate output voltage ripple, eliminating the need for ESR
induced output ripple from D-CAP™ control.
POWERGOOD
The TPS54494 has power-good outputs that are measured on VFBx. The power-good function is activated after
the soft-start has finished. If the output voltage is within 16% of the target voltage, the internal comparator
detects the power good state and the power good signal becomes high after 1.5ms delay. During start-up, this
internal delay starts after 1.5ms of the UVP Enable delay time to avoid a glitch of the power-good signal. If the
feedback voltage goes outside of ±16% of the target value, the power-good signal becomes low after 2µs.
UVLO Protection
Under-voltage lock out protection (UVLO) monitors the voltage of the VREG5 pin. When the VREG5 voltage is lower
than the UVLO threshold, the TPS54494 shuts down. As soon as the voltage increases above the UVLO
threshold, the converter starts again.
Thermal Shutdown
TPS54494 monitors its temperature. If the temperature exceeds the threshold value (typically 155°C), the device
shuts down. When the temperature falls below the threshold, the IC starts again.
When VIN1 starts up and VREG5 output voltage is below its nominal value, the thermal shutdown threshold is
lower than 155°C. As long as VIN1 rises, TJ must be kept below 110°C.
TYPICAL CHARACTERISTICS
One output is enabled unless otherwise noted. VIN = VIN1 or VIN2. VIN = 12 V, TA = 25°C (unless otherwise noted).
2000 20
1400 14
1200 12
1000 10
800 8
600 6
400 4
200 2
VIN1, VIN2 = 12 V VIN1, VIN2 = 12 V
0 0
−50 0 50 100 150 −50 0 50 100 150
Junction Temperature (°C) G001
Junction Temperature (°C) G002
Figure 1. Input Current vs Junction Temperature Figure 2. Input Shutdown Current vs Junction Temperature
50 3.40
VOUT = 3.3 V
45 3.38
40 3.36
EN Input Current (µA)
Figure 3. EN Current vs EN Voltage (VEN=12V) Figure 4. VO1=3.3V Output Voltage vs Output Current
1.55 3.40
VOUT = 1.5 V
1.54 3.38
1.53 3.36
Output Voltage (V)
1.52 3.34
1.51 3.32
1.50 3.30
1.49 3.28
1.48 3.26
1.47 VIN = 5 V 3.24
VIN = 12 V IOUT = 10 mA
1.46 3.22
VIN = 18 V IOUT = 1 A
1.45 3.20
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0 2 4 6 8 10 12 14 16 18 20
Output Current (A) G005
Input Voltage (V) G006
Figure 5. VO2=1.5V Output Voltage vs Output Current Figure 6. VO1=3.3V Output Voltage vs Input Voltage
1.52
1.51
1.50
1.49
Iout(2A/div)
1.48
1.47
IOUT = 10 mA
1.46
IOUT = 1 A
1.45
0 2 4 6 8 10 12 14 16 18 20
Input Voltage (V) G007 100 ms/div
Figure 7. VO2=1.5V Output Voltage vs Input Voltage Figure 8. VO1=3.3V, 0 A to 4 A Load Transient Response
EN1(10V/div)
Vout(50mV/div)
Vout(1V/div)
Iout(1A/div)
PG1(5V/div)
100
EN2(10V/div) 90
80
70
Efficiency (%)
Vout2(0.5V/div) 60
50
40
30
20 VIN = 6 V
VIN = 12 V
PG2(5V/div) 10
VIN = 18 V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
400 ms/div Output Current (A) G012
Figure 11. VO2=1.5V, PG2 Figure 12. VO1=3.3V, Efficiency vs Output Current
Efficiency (%)
60 60
50 50
40 40
30 30
20 VIN = 6 V 20 VIN = 5 V
VIN = 12 V VIN = 12 V
10 10
VIN = 18 V VIN = 18 V
0 0
0.001 0.01 0.1 1 10 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
Output Current (A) G013
Output Current (A) G014
Figure 13. VO1=1.5V, Efficiency vs Output Current Figure 14. VO1=3.3V, Efficiency vs Output Current
100 800
90 750
60 650
50 600
40 550
30
500
20 VIN = 5 V
VIN = 12 V 450
10
VIN = 18 V IOUT1 = 1 A VOUT1 = 3.3 V
0 400
0.001 0.01 0.1 1 10 0 5 10 15 20
Output Current (A) G015
Input Voltage (V) G016
Figure 15. VO2=1.5V, Efficiency vs Output Current Figure 16. VO1=3.3V, SW-frequency vs Input Voltage
800 900
VIN1, VIN2 = 12 V
750 800
Switching Frequency (kHz)
700 700
600
650
500
600
400
550
300
500 200
450 100
IOUT2 = 1 A VOUT2 = 1.5 V VOUT1 = 3.3 V
400 0
0 5 10 15 20 0.01 0.1 1 10
Input Voltage (V) G017
Output Current (A) G018
Figure 17. VO2=1.5V, SW-frequency vs Input Voltage Figure 18. VO1=3.3V, SW-frequency vs Output Current
700
600
500
400
SW1(5V/div)
300
200
100
VOUT2 = 1.5 V
0
0.01 0.1 1 10
Output Current (A) G019
400 nsec/div)
Figure 19. VO2=1.5V, SW-frequency vs Output Current Figure 20. VO1=3.3V, VO1 Ripple Voltage (IO1= 4 A)
VO = 3.3 V VIN1(50mV/div)
VO = 1.5 V VO2(10mV/div)
SW2(5V/div) SW1(5V/div)
Figure 21. VO2=1.5V, Ripple Voltage (IO2= 2 A) Figure 22. VIN1 Input Voltage Ripple (IO1= 4 A)
VO = 1.5 V VIN2(50mV/div)
SW2(5V/div)
400 nsec/div)
DESIGN GUIDE
VINx
12V ± 10%
1 VIN1 VIN2 16
6 PG1 PG2 11
R11
R12
73.2 kW
7 VFB1 VFB2 10
21.5 kW
R21 C4 1uF R22
22.1 kW
22.1 kW
8 GND VREG5 9
PGND
SGND SGND
At low frequencies, the overall loop gain is set by the output set-point resistor divider network and the internal
gain of the TPS545494. The low frequency phase is 180 degrees. At the output filter pole frequency, the gain
rolls off at a –40 dB per decade rate and the phase drops rapidly. D-CAP2™ introduces a high frequency zero
that reduces the gain roll off to –20 dB per decade and increases the phase to 90 degrees one decade above the
zero frequency. The inductor and capacitor selected for the output filter must be selected so that the double pole
of Equation 3 is located below the high frequency zero but close enough that the phase boost provided by the
high frequency zero provides adequate phase margin for a stable circuit. To meet this requirement use the
values recommended in Table 1.
(1) Optional
For higher output voltages at or above 1.8 V, additional phase boost can be achieved by adding a feed forward
capacitor (Cff) in parallel with R1.
The inductor peak-to-peak ripple current, peak current and RMS current are calculated using Equation 4,
Equation 5 and Equation 6. The inductor saturation current rating must be greater than the calculated peak
current and the RMS or heating current rating must be greater than the calculated RMS current.
For the calculations, use 700 kHz as the switching frequency, fSW. Make sure the chosen inductor is rated for the
peak current of Equation 5 and the RMS current of Equation 6.
VOx VINx(MAX) - VOx
ΔIL1x = ´
VINx(MAX) L1x ´ fSW
(4)
ΔIL
ILpe akx = IOx +
2 (5)
1
IL Ox(RMS) = IOx 2 + ΔIL2
12 (6)
For the above design example, the calculated peak current is 4.46 A and the calculated RMS current is 4.01 A
for VO1. The inductor used is a TDK CLF7045-2R2N with a rated current of 5.5 A based on the inductance
change and of 4.3 A based on the temperature rise.
The capacitor value and ESR determines the amount of output voltage ripple. The TPS54494 is intended for use
with ceramic or other low ESR capacitors. The recommended value range is from 20µF to 68µF. Use Equation 7
to determine the required RMS current rating for the output capacitor(s).
VOx ´ (VINx - VOx )
ICOx(RMS ) =
12 ´ VINx ´ L Ox ´ f SW (7)
For this design two TDK C3216X5R0J226M 22µF output capacitors are used. The typical ESR is 2 mΩ each.
The calculated RMS current is 0.19A and each output capacitor is rated for 4A.
Thermal Information
This 16-pin PWP package incorporates an exposed thermal pad. The thermal pad must be soldered directly to
the printed circuit board (PCB). After soldering, the PCB is used as a heatsink. In addition, through the use of
thermal vias, the thermal pad can be attached directly to the appropriate copper plane shown in the electrical
schematic for the device, or alternatively, can be attached to a special heatsink structure designed into the PCB.
This design optimizes the heat transfer from the integrated circuit (IC).
For additional information on the exposed thermal pad and how to use the advantage of its heat dissipating
abilities, refer to the Technical Brief, PowerPAD™ Thermally Enhanced Package, Texas Instruments Literature
No. SLMA002 and Application Brief, PowerPAD™ Made Easy, Texas Instruments Literature No. SLMA004.
The exposed thermal pad dimensions for this package are shown in the following illustration.
Layout Considerations
1. Keep the input current loop as small as possible. And avoid the input switching current through the thermal
pad.
2. Keep the SW node as physically small and short as possible to minimize parasitic capacitance and
inductance and to minimize radiated emissions.
3. Keep analog and non-switching components away from switching components.
4. Make a single point connection from the signal ground to power ground.
5. Do not allow switching currents to flow under the device.
6. Keep the pattern lines for VINx and PGNDx broad.
Copyright © 2012–2013, Texas Instruments Incorporated Submit Documentation Feedback 15
Product Folder Links: TPS54494
TPS54494
SLVSBH1B – JUNE 2012 – REVISED AUGUST 2013 www.ti.com
VIN2
VIN HIGH
FREQUENCY VIN INPUT
BYPASS BYPASS
CAPACITOR CAPACITOR
~0.1µF 10µF x2
Switching noise
VIN1 1 16 VIN2 flows through IC
and CIN . It avoids
the thermal Pad.
OUTPUT
VBST 1 2 15 VBST2 FILTER
CAPACITOR VO2
SW 1 3 14
OUTPUT
SW2
INDUCTOR
Recommend to keep
PGND 1 4 13 PGND 2 distance more than 3-4mm.
(to avoid noise scattering,
TO ENABLE especially GND plane.)
EN1 5 12 EN2
CONTROL
Keep
PG1 6 11 PG2 distance more
than 1 inch
VFB1 7 10 VFB2
POWER GND
8 VREG 5
To feedback
GND 9
Feedback resisters
BIAS resisters
CAP
Symmetrical Layout
for CH1 and CH2
GND
PLANE
2,3 or bottom
layer
VOUT2 KEEP
VIAS > 3-4 mm
FROM OUTPUT
OUTPUT2 CAPACITORS
FILTER
CAPACITORS
POWER
GROUND
OUTPUT2 KEEP OUTPUT
INDUCTOR VIAS > 25 mm
FROM INPUT VIAS
TO ENABLE
VIN INPUT CONTROL
BYPASS
CAPACITORS
KEEP
VIAS > 3-4 mm
FROM INPUT
CAPACITORS
VIN HIGH
PGND2
FREQUENCY
BYPASS TO POWER
SW2
PG2
EN2
CAPACITOR GOOD PULL
UP 2
BOOST 16 15 14 13
CAPACITOR FEEDBACK
RESISTORS
EXPOSED THERMAL
VBST2 1 PAD AREA 12 VFB2
VIN2 2 11 VREG5
VIN BIAS ANALOG
CAP GROUND
VIN1 3 10 GND
TRACE
VBST1 4 9 VFB1
BOOST
CAPACITOR FEEDBACK
5 6 7 8 RESISTORS
SW1
PGND1
EN 1
PG1
TO POWER
VIN HIGH GOOD PULL
FREQUENCY
BYPASS
UP 1
CAPACITOR
KEEP
VIAS > 3-4 mm
FROM INPUT
CAPACITORS
VIN INPUT
VIA to Internal or
BYPASS
Bottom Layer Ground Plane TO ENABLE
CAPACITORS
VIA to internal or CONTROL
Bottom Layer Etch KEEP OUTPUT
OUTPUT1 VIAS > 25 mm
Etch or Copper Fill INDUCTOR FROM INPUT VIAS
on Top Layer
Internal or Bottom POWER
Layer Ground Plane GROUND
Etch on Bottom Layer, OUTPUT1
Internal Layer or FILTER
CAPACITORS KEEP
Under Component VIAS > 3-4 mm
FROM OUTPUT
NOTE: IT IS POSSIBLE TO PLACE
SOME COMPONENTS SUCH AS
VOUT1 CAPACITORS INTERNAL OR
BOTTOM LAYER
BOOST CAPACITOR AND FEEDBACK GROUND PLANE
RESISTORS ON BOTTOM LAYER
REVISION HISTORY
• Change text in the Auto-Skip Eco-Mode™ Control section From: "The on-time is kept almost half as it was in the
continuous..." To: "The on-time is kept almost the same as it was in the continuous..." ..................................................... 7
www.ti.com 10-Dec-2020
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)
TPS54494PWP ACTIVE HTSSOP PWP 16 90 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 PS54494
TPS54494PWPR ACTIVE HTSSOP PWP 16 2000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 PS54494
TPS54494RSAR ACTIVE QFN RSA 16 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 TPS
54494
TPS54494RSAT ACTIVE QFN RSA 16 250 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 TPS
54494
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com 10-Dec-2020
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 12-Feb-2019
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 12-Feb-2019
Pack Materials-Page 2
PACKAGE OUTLINE
PWP0016J SCALE 2.500
TM
PowerPAD TSSOP - 1.2 mm max height
SMALL OUTLINE PACKAGE
6.6 C SEATING
TYP PLANE
6.2
A 0.1 C
PIN 1 INDEX
AREA
14X 0.65
16
1
2X
5.1
4.55
4.9
NOTE 3
8
9
4.5 0.30
B 16X
4.3 0.19
0.1 C A B
(0.15) TYP
SEE DETAIL A
8 9
0.25
3.55 GAGE PLANE 1.2 MAX
2.68
0.75 0.15
0 -8 0.50 0.05
1 16 DETAIL A
A 20
TYPICAL
2.46 THERMAL
1.75 PAD
4223595/A 03/2017
PowerPAD is a trademark of Texas Instruments.
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
4. Reference JEDEC registration MO-153.
www.ti.com
EXAMPLE BOARD LAYOUT
PWP0016J TM
PowerPAD TSSOP - 1.2 mm max height
SMALL OUTLINE PACKAGE
(3.4)
NOTE 8 METAL COVERED
(2.46) BY SOLDER MASK
16X (1.5)
SYMM SEE DETAILS
16X (0.45) 1 16
(1.3) TYP
(R0.05) TYP
SYMM (0.65)
(3.55) (5)
NOTE 8
14X (0.65)
( 0.2) TYP
VIA 8 9
4223595/A 03/2017
NOTES: (continued)
www.ti.com
EXAMPLE STENCIL DESIGN
PWP0016J TM
PowerPAD TSSOP - 1.2 mm max height
SMALL OUTLINE PACKAGE
(2.46)
16X (1.5) BASED ON METAL COVERED
0.125 THICK BY SOLDER MASK
STENCIL
16X (0.45) 1 16
(R0.05) TYP
SYMM (3.55)
BASED ON
0.125 THICK
STENCIL
14X (0.65)
8 9
4223595/A 03/2017
NOTES: (continued)
10. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
11. Board assembly site may have different recommendations for stencil design.
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