BJT Characteristics: Objective
BJT Characteristics: Objective
BJT Characteristics: Objective
BJT CHARACTERISTICS
Abhishek Mourya
RA1911004010350
ECE-F
OBJECTIVE
To study the input and output characteristics of a bipolar junction transistor in Common
Emitter configuration and to measure h-parameters
APPRATUS REQUIRED
INPUT CHARACTERISTICS
I.) Vce = 0
Vbe(mV) Ib(uA)
200 0
400 0
582 18.4
638 162
657 343
669 531
677 723
683 917
688 1011
692 1311
696 1500
II.) Vce=5V
Vbe(mV) Ib(uA)
200 0
400 0
599 0
676 124
683 317
688 512
692 708
696 904
699 1100
702 1300
704 1500
OUTPUT CHARACTERISTICS
I.) Ib=18.4 uA
Vce Ic
0.0284 0
0.712 288
1.71 288
2.71 288
3.71 288
4.71 288
5.71 288
6.71 288
7.71 288
8.71 288
9.71 288
II.) Ib=162 uA
Vce Ic
3.27 0
18.9 0.981
30.1 1.97
38.9 2.96
46.2 3.95
52.5 4.95
58.2 5.94
63.4 6.94
68.2 7.93
72.8 8.93
77.1 9.92
GRAPHS
MODEL GRAPHS
OBSERVATION GRAPH
INPUT CHARACTERISTICS
OUTPUT CHARACTERISTICS
RESULT:
The input and output characteristics of BJT in CE configuration was verified and the graph was plotted