8A, 500V, 0.850 Ohm, N-Channel Power Mosfet Features: Data Sheet January 2002
8A, 500V, 0.850 Ohm, N-Channel Power Mosfet Features: Data Sheet January 2002
8A, 500V, 0.850 Ohm, N-Channel Power Mosfet Features: Data Sheet January 2002
Packaging
JEDEC TO-220AB
TOP VIEW
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Thermal Resistance Junction to Ambient RθJA Free Air Operation - - 62.5 oC/W
IRF840 Rev. B
IRF840
Source to Drain Diode Voltage (Note 2) VSD TJ = 25oC, ISD = 8.0A, VGS = 100A/µs (Figure 13) - - 2.0 V
Reverse Recovery Time trr TJ = 25oC, ISD = 8.0A, dISD/dt = 100A/µs 210 475 970 ns
Reverse Recovered Charge QRR TJ = 25oC, ISD = 8.0A, dISD/dt = 100A/µs 2.0 4.6 8.2 µC
NOTES:
2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 14mH, RG = 25Ω, peak IAS = 8A.
1.2 10
POWER DISSIPATION MULTIPLIER
1.0
8
ID , DRAIN CURRENT (A)
0.8
6
0.6
4
0.4
2
0.2
0 0
0 50 100 150 25 50 75 100 125 150
TC , CASE TEMPERATURE (oC) TC , CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE CASE TEMPERATURE
1
ZθJC , NORMALIZED TRANSIENT
0.5
THERMAL IMPEDANCE
0.2
0.1 0.1
0.05
0.02 PDM
0.01
SINGLE PULSE
10-2 t1
t2 t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-3 -5
10 10-4 10-3 10-2 0.1 1 10
t1 , RECTANGULAR PULSE DURATION (s)
102 15
VGS = 10V PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
10µs
12 VGS = 6.0V
ID, DRAIN CURRENT (A)
1ms
VGS = 5.5V
6
OPERATION IN THIS
1 REGION IS LIMITED 10ms
BY rDS(ON)
3 VGS = 5.0V
TC = 25oC DC
TJ = MAX RATED VGS = 4.5V VGS = 4.0V
SINGLE PULSE
0.1 0
1 10 102 103 0 50 100 150 200 250
VDS , DRAIN TO SOURCE VOLTAGE (V) VDS , DRAIN TO SOURCE VOLTAGE (V)
15 100
PULSE DURATION = 80µs VGS = 10V PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX
ISD(ON), DRAIN TO SOURCE VDS ≥ 50V
12
ID , DRAIN CURRENT (A)
CURRENT (A) 10
VGS = 6.0V
9
1
VGS = 5.5V
6 TJ = 150oC TJ = 25oC
10 3.0
PULSE DURATION = 80µs PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX
NORMALIZED DRAIN TO SOURCE
2.4
ON RESISTANCE VOLTAGE
8
ON RESISTANCE (Ω)
6 1.8
VGS = 10V
4 1.2
2 0.6
VGS = 20V
0 0
0 8 16 24 32 40 -60 -40 -20 0 20 40 60 80 100 120 140 160
TC , CASE TEMPERATURE (oC) TJ , JUNCTION TEMPERATURE (oC)
IRF840 Rev. B
IRF840
1.25 3000
ID = 250µA VGS = 0V, f = 1MHz
NORMALIZED DRAIN TO SOURCE
C, CAPACITANCE (pF)
1.05 1800
CISS
0.95 1200
COSS
0.75 0
-60 -40 -20 0 20 40 60 80 100 120 140 160 1 2 5 10 2 5 102
TJ , JUNCTION TEMPERATURE (oC) VDS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
VOLTAGE vs JUNCTION TEMPERATURE
15 100
PULSE DURATION = 80µs
10
9 TJ = 25oC
TJ = 150oC
TJ = 150oC
6 TJ = 25oC
1.0
0 0.1
0 3 6 9 12 15 0 0.3 0.6 0.9 1.2 1.5
ID , DRAIN CURRENT (A) VSD , SOURCE TO DRAIN VOLTAGE (V)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 8A
VGS , GATE TO SOURCE VOLTAGE (V)
16
VDS = 100V
12
VDS = 250V
VDS = 400V
8
0
0 12 24 36 48 60
Qg, GATE CHARGE (nC)
VDS
BVDSS
L tP
VDS
tP
0V IAS
0
0.01Ω
tAV
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
tON tOFF
td(ON) td(OFF)
tr tf
RL VDS
90% 90%
+
VDD 10% 10%
RG
- 0
DUT 90%
FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
VDS
CURRENT (ISOLATED
REGULATOR SUPPLY)
VDD
D
VDS
G DUT
0
Ig(REF) S
0
VDS Ig(REF)
IG CURRENT ID CURRENT
SAMPLING SAMPLING
RESISTOR RESISTOR 0
FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS
IRF840 Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™ FAST OPTOLOGIC™ SMART START™ VCX™
Bottomless™ FASTr™ OPTOPLANAR™ STAR*POWER™
CoolFET™ FRFET™ PACMAN™ Stealth™
CROSSVOLT™ GlobalOptoisolator™ POP™ SuperSOT™-3
DenseTrench™ GTO™ Power247™ SuperSOT™-6
DOME™ HiSeC™ PowerTrench SuperSOT™-8
EcoSPARK™ ISOPLANAR™ QFET™ SyncFET™
E2CMOSTM LittleFET™ QS™ TinyLogic™
EnSignaTM MicroFET™ QT Optoelectronics™ TruTranslation™
FACT™ MicroPak™ Quiet Series™ UHC™
FACT Quiet Series™ MICROWIRE™ SILENT SWITCHER UltraFET
STAR*POWER is used under license
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Rev. H4
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