Alfa-MOS AFT3904

Technology NPN General Purpose Amplifier

Features

• This device is designed as a general purpose amplifier and switch.

• The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

Pin Description ( SOT-23 )

Ordering Information
Part Ordering No. Part Marking Package Unit Quantity
AFT3904T1S23RG 1AM SOT-23 Tape & Reel 3000 EA

Absolute Maximum Ratings (TA=25
Unless otherwise noted)

Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 6.0 V
IC Collector Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
Notes :
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics (TA=25
Unless otherwise noted)

Symbol Parameter Max. Unit
Total Device Dissipation FR– 5 Board, (1) TA = 25°C 225 mW
PD
Derate above 25°C 1.8 mW/°C
RθJA Thermal Resistance, Junction to Ambient 556 °C/W
Total Device Dissipation Alumina Substrate, (2) TA = 25°C 300 mW
PD
Derate above 25°C 2.4 mW/°C
RθJA Thermal Resistance, Junction to Ambient 417 °C/W
Notes :
1) FR–5 = 1.0 x 0.75 x 0.062 in.
2) Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

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Rev.A Jan. 2013 Page 1
 Alfa-MOS AFT3904
Technology NPN General Purpose Amplifier

Electrical Characteristics (TA=25
Unless otherwise noted)

Symbol Parameter Test Condition Min. Max. Unit
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 1.0mA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 60 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 6.0 V
IBL Base Cutoff Current VCE = 30V, VEB = 3V 50 nA
ICEX Collector Cutoff Current VCE = 30V, VEB = 3V 50 nA
On Characteristics *
IC = 0.1mA, VCE = 1.0V 40
IC = 1.0mA, VCE = 1.0V 70
hFE DC Current Gain IC = 10mA, VCE = 1.0V 100 300
IC = 50mA, VCE = 1.0V 60
IC = 100mA, VCE = 1.0V 30
IC = 10mA, IB = 1.0mA 0.2
VCE(sat) Collector-Emitter Saturation Voltage V
IC = 50mA, IB = 5.0mA 0.3
IC = 10mA, IB = 1.0mA 0.65 0.85
VBE(sat) Base-Emitter Saturation Voltage V
IC = 50mA, IB = 5.0mA 0.95
Small Signal Characteristics
IC = 10mA, VCE = 20V,
fT Current Gain - Bandwidth Product 300 MHz
f = 100MHz
Cobo Output Capacitance VCB = 5.0V, IE = 0, f = 1.0MHz 4.0 pF
Cibo Input Capacitance VEB = 0.5V, IC = 0, f = 1.0MHz 8.0 pF
IC = 100µA, VCE = 5.0V,
NF Noise Figure 5.0 dB
RS = 1.0kΩ, f = 1.0kHz
hie Input Impedance VCE =10V, IC =1.0mA, f = 1.0 kHz 1.0 10 kΩ
hre Voltage Feedback Ratio VCE =10V, IC =1.0mA, f =1.0 kHz 0.5 8.0 X10 –4
hfe Small–Signal Current Gain VCE =10V, IC =1.0mA, f =1.0 kHz 100 400
hoe Output Admittance VCE =10V, IC =1.0mA, f =1.0 kHz 1.0 40 umhos
Switching Characteristics
td Delay Time VCC = 3.0V, VBE = 0.5V 35 ns
tr Rise Time IC = 10mA, IB1 = 1.0mA 35 ns
ts Storage Time VCC = 3.0V, IC = 10mA, 200 ns
tf Fall Time IB1 = IB2 = 1.0mA 50 ns
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%

Test Circuits

Figure 1: Delay and Rise Time Equivalent Test Circuit Figure 2: Storage and Fall Time Equivalent Test Circuit

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Rev.A Jan. 2013 Page 2
 Alfa-MOS AFT3904
Technology NPN General Purpose Amplifier

Typical Characteristics (TRANSIENT)

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 Alfa-MOS AFT3904
Technology NPN General Purpose Amplifier

Typical Characteristics (AUDIO SMALL–SIGNAL)

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 Alfa-MOS AFT3904
Technology NPN General Purpose Amplifier

Typical Characteristics (STATIC)

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 Alfa-MOS AFT3904
Technology NPN General Purpose Amplifier

Package Information ( SOT-23 )

©2010 Alfa-MOS Technology Corp.

2F, No.80, Sec.1, Cheng Kung Rd., Nan Kang Dist., Taipei City 115, Taiwan (R.O.C.)
Tel : 886 2) 2651 3928
Fax : 886 2) 2786 8483
©http://www.alfa-mos.com

©Alfa-MOS Technology Corp. www.alfa-mos.com

Rev.A Jan. 2013 Page 6