2STX2360

Low voltage fast-switching PNP power transistor

Features
■ Very low collector-emitter saturation voltage
■ High current gain characteristic
■ Fast-switching speed

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Applications
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■ Emergency lighting
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■

■
LED
Voltage regulation P r
TO-92
■ Relay drive
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Description
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Figure 1. Internal schematic diagram
The device is a PNP transistor manufactured
using new “PB-HDC” (power bipolar high density
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current) technology. The resulting transistor
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shows exceptional high gain performances
coupled with very low saturation voltage.

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The complementary NPN type is the 2STX1360.

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Table 1. Device summary

Order code Marking Package Packaging

2STX2360 X2360 TO-92 BAG

March 2010 Doc ID 17226 Rev 1 1/9

www.st.com 9
 Absolute maximum ratings 2STX2360

1 Absolute maximum ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VCBO Collector-base voltage (IE = 0) -60 V

VCEO Collector-emitter voltage (IB = 0) -60 V
VEBO Emitter-base voltage (IC = 0) -6 V
IC Collector current -3 A

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ICM Collector peak current (tP < 5 ms) -5 A

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IB Base current -0.2 A

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IBM Base peak current (tP < 5 ms) -0.4 A

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PTOT Total dissipation at Tamb = 25 °C 1 W
TSTG
TJ
Storage temperature
Max. operating junction temperature
e P -65 to 150 °C

t
150 °C

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Table 3. Thermal data
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Symbol

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Parameter Value Unit

RthJA

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Thermal resistance junction-ambient ___ _Max 125 °C/W

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 2STX2360 Electrical characteristics

2 Electrical characteristics

TCASE = 25 °C; unless otherwise specified.

Table 4. Electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Collector cut-off current

ICBO VCB = - 60 V -100 nA
(IE = 0)
Emitter cut-off current
IEBO VEB = - 6 V -100 nA

VBE(on)
(IC = 0)
Base-emitter on voltage VCE = - 2 V IC = - 100 mA -630 -650
(
-730
s )mV

VCE(sat)(1)
Collector-emitter
saturation voltage
IC = - 2 A IB = - 100 mA -200
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-320 mV
IC = - 3 A _ IB = - 150 mA

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Pr
Base-emitter saturation
VBE(sat) (1) IC = - 2 A _ IB = -100 mA -0.9 -1.2 V
voltage

hFE(1) DC current gain

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IC = - 100 mA_ VCE = - 2 V 80
IC = - 1 A

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_ VCE = - 2 V 160 400

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Resistive load
Delay time
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IC = - 3 A VCC = - 10 V 10 15 ns

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tr Rise time IB(on) = - IB(off) = - 300 mA 75 100 ns
ts Storage time VBE(off) = 5 V
)
250 350 ns
tf Fall time
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fT

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Transition frequency IC = - 0.1 A __ VCE = - 10 V 130 MHz

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1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %

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Typical characteristics (curves)

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Figure 2. DC current gain (VCE = - 2 V) Figure 3. DC current gain (VCE = - 5 V)

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Doc ID 17226 Rev 1 3/9

 Electrical characteristics 2STX2360

Figure 4. Collector emitter saturation voltage Figure 5. Base emitter saturation voltage

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Figure 6. Resistive load switching on Figure 7.
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Resistive load switching off
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Figure 8.
P
Capacitances
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 2STX2360 Electrical characteristics

2.2 Test circuits

Figure 9. Resistive load switching

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1. Fast electronic switch
2. Non-inductive resistor
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 Package mechanical data 2STX2360

3 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

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 2STX2360 Package mechanical data

TO-92 bulk shipment mechanical data

mm.
Dim.
Min. Typ. Max.

A 4.32 4.95

b 0.36 0.51

D 4.45 4.95
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E 3.30

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3.94

e 2.41

o d 2.67

Pr
e1 1.14 1.40

L 12.70

e t e 15.49

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R 2.16 2.41

S1

W
0.92

0.41
b s 1.52

0.56

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)-
V 5o

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0102782 D

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 Revision history 2STX2360

4 Revision history

Table 5. Document revision history

Date Revision Changes

04-Mar-2010 1 Initial release.

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 2STX2360

Please Read Carefully:

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Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the

time, without notice.

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e
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