OBJECTIVE QUESTIONS (MCQs) ON UNIT1 KEC 101T/201T

Diode operation and Applications

(Q.1-Q.4) For the given circuits and input waveform determine the output waveform

1.

Ans: d
2.

Ans: c
3.

Ans: d
4.

Ans: d

5. The maximum load current that can be drawn with Zener ON is

a) 1.4 mA
b) 2.3 mA
c) 1.8 mA
d) 2.5 mA
Ans: a
6. The Q-point of the zener diode (Current and Voltage) and voltage in the circuit shown
below is
a) (0.34 mA, 4 V)
b) (0.34 mA, 4.93 V)
c) (0.94 mA, 4 V)
d) (0.94 mA, 4.93 V)
Answer: a
8. The diode in a half wave rectifier has a forward resistance RF. The voltage is V msinωt and
the load resistance is RL. The DC current is given by _________
a) Vm/√2RL
b) Vm/(RF+RL)π
c) 2Vm/√π
d) Vm/RL

Answer: b
9. In a half wave rectifier, the sine wave input is 50sin50t. If the load resistance is of 1K, then
average DC power output will be?
a) 0.99W
b) 0.25W
c) 0.5W
d) 0.77W
Answer: b
10. In a half wave rectifier, the sine wave input is 200sin300t. The average value of output
voltage is?
a) 57.876V
b) 67.453V
c) 63.694V
d) 76.98
Answer: c

11. Efficiency of a half wave rectifier is

a) 50%
b) 60%
c) 40.6%
d) 46%
Answer: 40.6%

12. If peak voltage for a half wave rectifier circuit is 5V and diode cut in voltage is 0.7, then
peak inverse voltage on diode will be?
a) 5V
b) 4.9V
c) 4.3V
d) 6.7V
Answer: a
Explanation: For a rectifier, PIV=V m

13. Ripple factor of a half wave rectifier is_________(I m is the peak current and RL is load
resistance)
a) 1.414
b) 1.21
c) 1.4
d) 0.48
Answer: b
14. Efficiency of a centre tapped full wave rectifier is _________
a) 50%
b) 46%
c) 70%
d) 81.2%
Answer: d

15. Average DC current of a bridge full wave rectifier (where Im is the maximum peak current
of input).
a) 2Im /
b) Im/
c) Im/2
d) 1.414Im
Answer: a

16. Average DC power output of bridge full wave rectifier is equal to (I m is the peak current
and RL is the load resistance).
a) 2 Im2RL/2
b) 4 I m2RL/2
c) Im2RL/2
d) Im2 RL/22
Answer: b

17. Ripple factor of bridge full wave rectifier is?

a) 1.414
b) 1.212
c) 0.482
d) 1.321
Answer: c

18. If peak voltage on a bridge full wave rectifier circuit is 5V and diode knee voltage is 0.7V,
then the peak inverse voltage on diode will be_________
a) 4.3V
b) 9.3V
c) 8.6V
d) 3.6V
Answer: d For bridge rectifier PIV is Vm-VD = 5-0.7= 4.3V.

19. Efficiency of bridge full wave rectifier is_________

a) 81.2%
b) 50%
c) 40.6%
d) 45.33%
Answer:a

20. In a bridge full wave rectifier, the input sine wave is 40sin100t. The average output
voltage is_________
a) 22.73V
b) 16.93V
c) 25.47V
d) 33.23V
Answer: c

21. If peak voltage on a centre tapped full wave rectifier circuit is 5V and diode knee voltage
is 0.7V, then the peak inverse voltage on diode will be_________
a) 4.3V
b) 9.3V
c) 8.6V
d) 3.6V
Answer: b. For bridge rectifier PIV is 2Vm-VD = 10-0.7=9.3V.

22. Number of diodes used in a full wave bridge rectifier is_________

a) 1
b) 2
c) 3
d) 4
Answer: d

23. A crystal diode has forward resistance of the order of ……………

a) kΩ
b) Ω
c) MΩ
d) none of the above
Answer : b

24. A crystal diode has ………

a) one pn junction
b) two pn junctions
c) three pn junctions
d) none of the above
Answer : a

25. The reverse current in a diode is of the order of ……………….

a) kA
b) mA
c) μA
d) A
Answer : c

26. The forward voltage drop across a silicon diode is about …………………
a) 2.5 V
b) 3 V
c) 10 V
d) 0.7 V
Answer : d

27. A crystal diode is used as ……………

a) an amplifier
b) a rectifier
c) an oscillator
d) a voltage regulator
Answer : d

28. The d.c. resistance of a crystal diode is ………….. its a.c. resistance
a) the same as
b) more than
c) less than
d) none of the above
Answer : c

29. An ideal crystal diode is one which behaves as a perfect ……….. when forward biased.
a) conductor
b) insulator
c) resistance material
d) none of the above
Answer : a

30. The leakage current in a crystal diode is due to …………….

a) minority carriers
b) majority carriers
c) junction capacitance
d) none of the above
Answer :a

31. If the temperature of a crystal diode increases, then leakage current ………..
a) remains the same
b) decreases
 c) increases
d) becomes zero
Answer :c

32. If the doping level of a crystal diode is increased, the breakdown voltage………….
a) remains the same
b) is increased
c) is decreased
d) none of the above
Answer : c

33. The knee voltage of a crystal diode is approximately equal to ………….

a) applied voltage
b) breakdown voltage
c) forward voltage
d) barrier potential
Answer : d

34. When the graph between current through and voltage across a device is a straight
line, the device is referred to as ……………….
a) linear
b) active
c) nonlinear
d) passive
Answer :a

35. When the crystal current diode current is large, the bias is …………
a) forward
b) inverse
c) poor
d) reverse
Answer :a

36. A crystal diode is a …………… device

a) non-linear
b) bilateral
c) linear
d) none of the above
Answer :a

37. If the doping level in a crystal diode is increased, the width of depletion layer………..
a) remains the same
b) is decreased
c) is increased
d) none of the above
Answer :c
38. A zener diode has ………..
a) one pn junction
b) two pn junctions
c) three pn junctions
d) none of the above
Answer :a
39. A zener diode is used as …………….
a) an amplifier
b) a voltage regulator
c) a rectifier
d) a multivibrator
Answer :b

40. The doping level in a zener diode is …………… that of a crystal diode
a) the same as
b) less than
c) more than
d) none of the above
Answer :c

41. A zener diode is always ………… connected.

a) reverse
b) forward
c) either reverse or forward
d) none of the above
Answer :a

42. A zener diode utilizes ……….. characteristics for its operation.

a) forward
b) reverse
c) both forward and reverse
d) none of the above
Answer :b

43. In the breakdown region, a zener didoe behaves like a …………… source.
a) constant voltage
b) constant current
c) constant resistance
d) none of the above
Answer :a

44. A zener diode is destroyed if it…………..

a) is forward biased
b) is reverse biased
c) carrier more than rated current
d) none of the above
Answer :c
45. A series resistance is connected in the zener circuit to………..
a) properly reverse bias the zener
b) protect the zener
c) properly forward bias the zener
d) none of the above
Answer : b

46. A zener diode is …………………. device

a) a non-linear
b) a linear
c) an amplifying
d) none of the above
Answer :a

47. A zener diode has ………….. breakdown voltage

a) undefined
b) sharp
c) zero
d) none of the above
Answer :b

48. For the same secondary voltage, the output voltage from a centre-tap rectifier is
………… than that of bridge rectifier
a) twice
b) thrice
c) four time
d) one-half
Answer :d

49. For the given circuit, what is the minimum peak value of the output waveform if the
input waveform is 10V square wave with switching time of 1 second? Assume that the input
switches between +10V and -10V DC levels.

a) 0 V
b) -5 V
c) -20 V
d) -10 V
Answer :c
50. For the given circuit and input waveform, the +ve peak value of the output is +30V.

a) True
b) False
Answer:a

51. Which of the following models of a semiconductor diode is the most widely used for the
purpose of calculation?
a) Approximate Equivalent Model
b) Ideal Diode Model
c) Piecewise Linear Model
d) Hybrid model
Answer: a

52. From the given circuit diagram, considering the diode to be a silicon semiconductor
diode, what is the magnitude of diode current? (Use an appropriate model of the diode)

a) 43 mA
b) 0 mA
c) 4.3 mA
d) 5 mA
Answer: c

53. From the given circuit diagram, what is the value of diode current?
a) 8 mA
b) 7.3 mA
c) 0 mA
d) 7 mA
Answer: c

54. From the given circuit diagram, what is the value of diode current?

a) 8 mA
b) 0 mA
c) 7.3 mA
d) 7 mA
Answer:b

55. From the given circuit diagram, what is the value of diode current? Use an appropriate
diode model.

a) 8 mA
b) 0 mA
c) 7.3 mA
d) 7 mA
Answer: d

56. From the given circuit diagram, what is the value of diode current and voltage across the
resistor?
a) 2mA, 2 V
b) 1.3mA, 1.3 V
c) 1mA, 1 V
d) 0 mA, 0 V

Answer : d Hint:The diodes in forward bias, have drops of 0.3V for Ge and 0.7V for Si, and
the total drops cancel out the source voltage, and hence the voltage drop across resistance
is zero and diode current is zero.

57. From the given circuit diagram, what is the value of diode current and voltage across R2?

a) 2.425 mA, 9.324 V

b) 5.2 mA, 5.8125 V
c) 2.325 mA, 5.8125 V
d) 0 mA, 10V
Answer:c

58. What is A, B, C and D to design a voltage doubler in the given circuit?

a) A=B=Resistors, C=D=Diodes
b) A=D=Capacitors, B=C=Diodes
c) A=Capacitor, B=D=Diodes, C=Resistor
d) A=C=Diodes, B=D=Capacitors
Answer:b
59. Given input for the circuit is f = 1 KHz. Diode cut-in voltage = 0.7 V

Output waveform:

For the given output, find V1?

a) 4.3V
b) 4V
c) 5V
d) 5.7V

Answer:a

60. If input diode is an ideal diode. Which output waveform across R is valid for values of V1
from +2 to + 4 volts?

a) b)
c) d)

Answer: b, Hint: v0=vi +(5-V1). Since V1 varies from +2V to +4V, therefore output voltage
shift will be of +1V minimum to +3V maximum. The positive peak of input signal is at +5V,
hence positive peak after shift can reach to maximum 8V. Also, the frequency and peak
to peak swing of the signal will not change. Hence ‘b’ is the correct option. In option ‘a’
peak to peak swing is more than the input signal, in option ‘c’ shift is of +5V and in option
‘d’ the frequency of the signal has changed.

61. Choose the correct option for the relation between the two circuits.

a) Circuit (a) is a voltage doubler circuit, while Circuit (b) does not double the voltage
b) Both are similar and double the voltage to 2V m
c) Circuit (a) is a doubler circuit with output +2Vm and Circuit (b) is a doubler with
output -2Vm
d) Circuit (a) is a doubler circuit, while Circuit (b) is a clipper.
Answer: c
Explanation: Both circuits are half-wave voltage doublers, in which capacitor C2 charges
up to twice the positive (or negative for Circuit (b)) peak for one half of the wave.

62. Consider the circuit shown. The input is a square wave ± 15 V, for a silicon diode and an
output voltage swing of 30 V. Choose the validity of the statement. If the value of resistance
R = 10KΩ and capacitance C = 1MF.
a) True
b) False
Answer: a
63. For a sinusoidal input of 20 Vpeak to the given circuit, what is the peak value of the
output waveform?

a) 20 V
b) 25 V
c) 0 V
d) -25 V
Answer: b

64. For the given circuit for a 20 Vpeak sinusoidal input vi, what is the value of vi at which the
clipping begins?

a) 5 V
b) 0 V
c) -5 V
d) Clipping doesn’t occur
Answer: c

65. For a sinusoidal input of 20 Vpeak to the given circuit, what is the minimum value of the
output waveform?
a) 20 V
b) 25 V
c) -25 V
d) 0 V
Answer: d
66. For the given input waveform to the given circuit, what is the peak value of the output
waveform?

a) 0 V
b) 16 V
c) 12 V
d) 0 V
Answer: b

67. For the given input waveform to the given circuit, what is the minimum value of the
output waveform?

a) 4 V
b) 16 V
c) 12 V
d) 0 V
Answer: a

68. Which of the following is not a necessary component in a clamper circuit?

a) Diode
b) Capacitor
c) Resistor
d) Independent DC Supply
Answer: d

69. Determine the value of RL that will establish maximum power conditions for the Zener
diode in the given circuit

a) 1 Kilo ohm
b) 2 Kilo ohm
c) 3 Kilo ohm
d) 4 Kilo ohm
Answer: b

70. Determine the minimum value of RL to ensure that the Zener diode is in the “on” state.

a) 400 ohm
b) 220 ohm
c) 440 ohm
d) 180 ohm
e) Answer: b

71. For the network of Fig. determine the minimum value of Vi that will maintain VL at 8 V

a) 10.5 V
b) 11.3 V
c) 15.9 V
d) 16.5V
Answer: b
72. For the network of Fig. determine the maximum value of Vi that will maintain VL at 8 V
and not exceed the maximum power rating of the Zener diode

a) 10.5 V
b) 11.3 V
c) 15.9 V
d) 16.5V
Answer:c

73. For the given circuit, the voltage across 2 Kilo-ohm resistance in +ve half cycle is
(assuming ideal diode)

a) 4 Sin314t
b) 2 Sin314t
c) 8 Sin314t
d) 3 Sin314t
Answer:b

74. V0 for the network of Figure is given by

a) c)
 b) d)

Answer: c

LED, Photodiode, Solar cell, Tunnel diode, Varactor Diode

LED
1. A light emitting diode is _________
a) Heavily doped
b) Moderately doped
c) Intrinsic semiconductor
d) Zener diode
Answer: b
2. Which of the following materials can be used to produce infrared LED?
a) Si
b) GaAs
c) CdS
d) PbS
Answer: b. Eg=hc/ . GaAs has a band gap of 1.14eV.  = 0.85 m.

3. What should be the biasing of the LED?

a) Forward bias
b) Reverse bias
c) Forward bias than Reverse bias
d) No biasing required
Answer: a

4. Which process of the Electron-hole pair is responsible for emitting of light?

a) Generation
b) Movement
c) Recombination
d) Diffusion
Answer: c

Photodiode
Q1: Photodiode is used in the detection of

a. Visible light
b. Invisible light
c. No light
d. Both visible and invisible light
Answer: (d) Both visible and invisible light
Q2: In using a photodiode as a photodetector, it is invariably reverse biased

a. The power consumption is much reduced compared to reverse biased condition

b. Only when the photodiode is reverse biased the incident photons produce electron-
hole pairs
c. Only if the diode is reverse biased light variations can be converted into current
variations
d. When photons are incident on the diode, the fractional change in the reverse
current is much greater than the fractional change in the forward current

Answer: (d) When photons are incident on the diode, the fractional change in the reverse
current is much greater than the fractional change in the forward current.
Q3: The maximum wavelength of photons that can be detected by a photodiode made by
a semiconductor of bandgap 2eV is about
a. 620 nm
b. 700 nm
c. 740 nm
d. 1240 nm
Answer: (a) 620 nm
Q4: The presence of dark current decreases the sensitivity of the photodiode to light
a. True
b. False
Answer: (a) True
Q5: In a photodiode, when there is no incident light, the reverse current is almost negligible and is
called
a. Zener current
b. Dark current
c. Photocurrent
d. PIN current
Answer: (b) Dark current
Q6: When a diode is forward biased, the recombination of free electron and holes produce
a. Heat
b. Light
c. Radiation
d. All the above
Answer: (d) All the above

Q7: The width of the depletion region is

a. Directly proportional to the doping
b. inversely proportional to the doping
c. Independent of doping
d. None of the above
Answer: (b) inversely proportional to the doping

Q8. The phenomenon leading to avalanche breakdown in reverse-biased diodes is known as

_______
a) Auger recombination
b) Mode hopping
c) Impact ionization
d) Extract ionization
Answer: c
Q9. Electron-hole pairs in a photodiode are generated in ___________
a) N-type region
b) Diffusion region
c) Depletion region
d) P-type region
Answer: c
Q10. The diffusion process is _____________ as compared with drift.
a) Very fast
b) Very slow
c) Negligible
d) Better
Answer: b

Tunnel Diode
1. The range of tunnel diode voltage VD, for which slope of its V-I characteristics is negative
would be? (The VP is the peak voltage and VV is the valley voltage).
a) VD > 0
b) 0<VD < VP
c) VV > VD > VP
d) VD > VV</v
Answer: c

2. Tunnel diode has a very fast operation in__________

a) gamma frequency region
b) ultraviolet frequency region
c) microwave frequency region
d) radio frequency region
Answer: c

3. Which of the following are true about a tunnel diode?

1) it uses negative conductance property
2) it operates at high frequency
3) valence band of p-side always faces the conduction band of n-side in reverse bias
a) 1 and 3
b) 1 and 2
c) 1, 2 and 3
d) 2 and 3
Answer: c

4. The depletion layer of tunnel diode is very small because______

a) it has high dopants
b) uses positive conductance property
 c) it is used for high frequency ranges
d) tunnelling effect
Answer: a

5. With interments of reverse bias, the tunnel current also increases because________
a) electrons move from valence band of p-side to conduction band of n-side
b) fermi level of p-side becomes higher than that of n-side
c) junction current decreases
d) un-equality of n and p band edge
Answer: a

6. Tunnel diodes are made up of________

a) Germanium and silicon materials
b) AlGaAs
c) AlGaInP
d) ZnTe
Answer: a

7. What happens to a tunnel diode when the reverse bias effect goes beyond the valley
point?
a) it behaves as a normal diode
b) it attains increased negative slope effects
c) reverse saturation current increases
d) becomes independent of temperature
Answer: a

8. The tunnel diode is mainly used

a) For very high speed of switching
b) To control the power
c) For rectification
d) For fast chopping
Answer: a

Varactor diode

1. Varactor diode is a semiconductor diode in which the _________ can be varied as a

function of reverse voltage of the diode.
a) Junction resistance
b) Junction capacitance
c) Junction impedance
d) None of the mentioned
Answer: b

2. The width of depletion region of a varactor diode ________with increase in reverse

bias voltage.
a) Increases
b) Decreases
 c) Remains constant
d) None of the mentioned
Answer: a
3. Varactors made of ______ have higher frequency range of operation compared to
silicon fabricated varactor diodes.
a) Germanium
b) GaAs
c) GaN
d) None of the mentioned
Answer: b

4. Varactor diodes are operated in _________ region to achieve maximum efficiency

possible.
a) Forward region
b) Saturation region
c) Reverse saturation region
d) Active region
Answer: b