16.

SEMICONDUCTORS
PHYSICS

CONCEPTUAL BULLETS 6. The diffusion current in a p – n junction is

1) from the n – side to the p – side
1. In case of a semi conductor, which one of the
2) from the p – side to the n – side
following statements is wrong ?
3) from the n – side to the p – side if the
1) Resistivity is in between that of a conductor
function is forward–biased and in the
and insulator
opposite direction if it is reverse– biased
2) Temperature coefficient of resistance is
4) from the p– side to the n – side if the junction
negative
is forward – biased and in the opposite
3) Doping increases conductivity direction if it is reverse – biased.
4) At absolute zero it behaves as a conductor 7. Diffusion current in a p – n junction is greater
2. Electric conduction in a semiconductor takes than the drift current in magnitude
place due to 1) if the junction is forward – biased
1) electrons only 2) if the junction is reverse – biased
2) holes only 3) if the junction is unbiased
3) both electrons and holes 4) in no case
4) neither electrons nor holes 8. In an intrinsic semiconductor, the fermi energy
level lies
3. An electric field is applied to a semiconductor.
1) nearer to valence band
Let the number of charge carriers be n and the
2) nearer to conduction band
average drift speed be v. If the temperature is
3) exactly at the middle of the forbidden energy gap
increased, 4) Cant’ say
1) both n and v will increase
9. Which of the following statements is not true?
2) n will increase but v will decrease
3) v will increase but n will decrease 1) the resistance of intrinsic semiconductors
decreases with increase of temperature
4) both n and v will decrease
2) doping pure Si with trivalent impurities give
4. When an impurity is depend into an intrinsic p-type semiconductors
semiconductor, the conductivity of the semi- 3) the majority charge carries in n-type
conductor semiconductors are holes
1) increases
4) a p-n junction can act as a semiconductor
2) decreases diode
3) remains the same
10. The mobility of electrons is greater than that of
4) becomes zero
holes. Because they
5. The drift current in a p – n junction is 1) are lighter
1) from the n - side to the p – side 2) have negative charge
2) from the p – side to the n – side 3) need less additional energy to move
3) from the n–side to the p – side if the junction 4) experience collisions less frequently
is forward – biased and in the opposite 11. A doped semiconductor is
direction if it is reverse – biased 1) Positively charged
4) from the p – side to the n – side if the junction 2) Negatively charged
is forward – biased and in the opposite 3) electrically neutral
direction if it is reverse – biased 4) may be positive or negative

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 PHYSICS
12. A n-type and P-type silicon can be obtained by 18. The correct curve between potential and
doping pure silicon with distance near P–N junction is
1) Arsenic and Phosphorous
V V
2) Indium and Aluminium
3) Phosphorous and Indium P N P N
1) d 2) d
4) Aluminium and Boron
13. The band diagrams of three semiconductors are
given in the figure. From left to right they are V V
respectively. P N
3) d 4) d
C C C
Ef
Ef
Ef 19. In a semi conductor diode, the barrier potential
V V V
opposes diffusion of
1) n–intrinsic–p 2) p–intrinsic–n 1) free electrons from n-region
3) intrinsic–p–n 4) intrinsic-n–p 2) holes from P-region
14. A semiconducting device is connected in a series 3) majority carriers from both the regions
circuit with a battery and a resistances. A current 4) minority carriers from both regions
is found to pass through the circuit. If the
20. A P-n junction diode is said to be forward
polarity of the battery is reversed, the current
biased, when
drops to almost zero. The device may be
1) an intrinsic semiconductor 1) No potential difference is applied across p
2) a p – type semiconductor and n regions
3) an n – type semiconductor 2) A potential difference is applied across p
4) a p–n junction and n regions making p region positive and
n-region negative
15. The potential in the depletion layer is due to
1) Electrons 2) Holes 3) A potential difference is applied across ‘P’
and ‘n’ regions making P region negative
3) Ions 4) Forbidden Band
and n-region positive
16. In an unbiased p-n junction. holes diffuse from 4) A magnetic field is applied in the region of
the p-region to n-region because
junction
1) free electrons in the n-region attract them.
21. When p-n junction diode is forward biased
2) they move across the junction by the
potential difference. 1) the depletion region is reduced and barrier
3) hole concentration in p-region is more as height is increased
compared to n-region 2) the depletion region is widened and barrier
4) all the above height is reduced.
17. In a PN junction 3) both the depletion region and barrier height
1) high potential at N side and low potential at are reduced
P side 4) both the depletion region and barrier height
2) high potential at P side and low potential at are increased.
N side 22. The resistance of an ideal diode in forward
3) P and N both are at same potential biased condition is
4) undetermined 1) zero 2) infinity 3) finite 4) negative

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23. The resistance of an ideal diode in reverse biased 29. Three photodiodes D 1 , D 2 , D 3 are made of
condition is
semiconductors having band gaps of 2.5ev, 2ev
1) Zero 2) Infinity
and 3ev which can detect light of wave length
3) Finite 4) Negative 6000A o
24. When a P-n junction diode is reverse biased, 1) D1 2) D2 3) D3 4) All
the flow of current across the junction is mainly
due to 30. The I - V characterisic of an LED is
1) Diffusion of charges I
2) Drift of charges B
G I
3) Both drift and diffusion of charges Y
4) Neither diffusion nor drift of charges 1) R 2)
25. In figure V0 is the potential barrier across a p-n O V O V
junction, when no battery is connected across
the junction, then
V R YG B
1
2 R I
3 I
v0 Y
3) 4)
G
B O V

31. A n-p-n transistor is said to be in active region

1) (1) and (3) both correspond to forward bias
of operation, when
of junction
1) both emitter and collector junctions are
2) (3) correspond to forward bias of junction
forward biased.
and (1) corresponds to reverse bias of
junction 2) both emitter and collector junctions are
reverse biased.
3) (1) corresponds to forward bias and (3)
corresponds to reverse bias of junction 3) emitter junction is forward biased and
collector junction is reverse biased.
4) (3) and (1) both correspond to reverse bias
of junction 4) emitter junction is reverse biased and
collector junction is reverse biased.
26. Maximum efficiency of a full-wave rectifier is
1) 40.6% 2) 81.2% 3) 25% 4) 50% 32. When n-P-n transistor is used as an amplifier
27. Zener diode can be used 1) Electrons move from emitter to collector
1) As voltage regulator 2) As amplifier 2) Holes move from emitter to base
3) As oscillator 4) All the above 3) Electrons move from collector to base
28. Elementary semiconductors are not used to 4) Holes move from base to collector.
make visible LED because
33. The relation between B and C with usual
1) They have low conductivity
notation is
2) They have low melting point
B C
3) They have low boiling point 1) C 2) B 
(1  B ) 1 C
4) They have band gap such that emissions
are in IR regim 3) BC  C  B 4) All the above

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34. An n-p-n transistor power amplifier in C.E 42. An AND gate can be prepared by repetitive use of
configuration gives 1) NOT gate 2) OR gate
1) voltage amplification only
3) NAND gate 4) AND gate
2) current amplification only
3) both current and voltage amplification 43. If A=1, B=0, then in terms of Boolean algebra
4) only power gain of unity A  B equals
1 1) A 2) B 3) A 4) A  B
x
1
y
35. For a transistor
B
and
C where B and 44. An AND gate can be prepared by repetitive use
C are current gains in common base and of
common emitter configuration. Then a) NOT gate b) OR gate
1) x + y = 1 2) x – y = 1 c) NAND gate d) NOR gate
3) 2x = 1 – y 4) x + y = 0 1) Only a and b are correct
36. The output of two input OR gate is 1 2) Only c and d are correct
1) if both inputs are zero 3) Only a, b and c are correct
2) if either or both the inputs are 1 4) All are correct
3) only if both inputs are 1 45. The minimum no of NOR gates require to get
4) if either input is zero AND gate
37. An AND gate 1) 2 2) 5 3) 3 4) 4
1) implements logic addition
BULL’S EYE EXERCISE
2) is a universal gate
3) implements logic multiplication 1. Pure Si at 300K has equal electron (ne) and hole
4) implements logic subtraction (nn) concentrations of 1.5 s 1016 m 3 . Dopping
38. NAND and NOR gates are called universal gates by indium n n increases to 3 s 10 22 m 3 .
primarily, because they Calculate ne in the dopped Si.
2) 1.5 s 10
6
1) are available universally 1) 7.5 s 109 m 3
6 3
2) can be combined to produce OR, AND and 3) 4.5 s 1038 m 3 4) 2 s 10 m
NOT gates 2. For given semiconductor contribution of current
3) are widely used in integrated circuits due to electron and hole is in ratio
4) are easiest to manufacture 3 : 1 and ratio of drift velocity for electron and
hole is 5 : 2, then the ratio of electron to hole
39. Digital circuits can be made by repetitive use of
concentration
1) OR gates 2) NOT gates
1) 5 : 6 2) 15 : 2 3) 6 : 5 4) 2 :15
3) AND gates 4) NAND gates
3. A Photodetector is made from a semiconductor
40. The minimum number of NAND gates are used
to form AND gate is with E g  0.75ev . Calculate the maximum
1) 1 2) 2 3) 3 4) 4 wavelength which it can detect
0
0
41. Two inputs of NAND gate are shortened. This 1) 16553A 2) 26484 A
gate is equivalent to 0 0
1) OR 2) AND 3) NOT 4) NOR 3) 12414 A 4) 8671A

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4. Find the value of current in given circuit 8. What is the value of current I in given curcuit

Si 0.2v I 500 8
Ge 0.3y
1k8
V
I
18v 6v

2.7v 1 k8

1) 2.4 mA 2) 2 mA 1) 8 mA 2) 12 mA 3) 24 mA 4) 6 mA
3) 1.7 mA 4) 2.7 mA
9. The circuit is equvivalent to
5. In the given circuit, If P- N junction is ideal
then current flowing through it is NOR NAND NOT

200 8
1y 3V
1) NOR gate 2) OR gate
3) AND gate 4) NAND gate

1) 0 A 2) 0.02 A 3) 0.015 A 4) 0.01 A 10. A zener diode is specified having a breakdown

Voltage of 9.1v with a maximum power
6. Two Amplifiers are connected in series
dissipation of 364mw. What is the maximum
(Cascaded). The first has a voltage gain of 10
current that diode can handle ?
and the second has a voltage gain of 20. If the
1) 4 mA 2) 40 mA
input voltage is 0.01V, calculate the output
3) 400 mA 4) 20 mA
signal.
1) 20V 2) 200 V 3) 2 mv 4) 2V 11. In a tramistor, the value of C is 50, calculate

7. If in a P-n junction diode a square input signal

the value of B
1) 0.98 2) 01 3) 1.02 4) 0.02
of 10v is applied as shown. Then, the output
signal across RL will be: 12. Calculate the emitter current for which
I B  20 NA, C  100
5v 1) 1.98mA 2) 2.02mA
0v RL 3) 2 mA 4) 5mA
-5v 13. The base current is 100 NA and collector current
is 3 mA. What is the value of B
5v 10v
1) 30 2) 1.03 3) 0.91 4) 0.97
1) 2)
0v 0v 14. In a transistor connected in common emmitter
mode R 0  4K8, R i  1K8,
0v 0v I C  1mA and I B  20 NA . Find the voltage gain
3) 4) 1) 200 2) 800
10v 5v
3) 125 4) 150

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15. For given CE biasing circuit , If voltage across 18. Given electrical Analogue represents which
collector-emmitter is 12Vand current gain is 100 logic Gate
and base current is 0.04mA, then determine the B
value of collector resistance RC.

Y
RC

RB 20 V
C
A
1) OR gate 2) AND gate
B
E
3) NOR gate 4) NAND gate

19. For the given circuit, what is the output X ?

1) 5K8 2) 3K8 3) 2 K8 4) 1K8 A

B X
16. In the following figures , the diodes which are
reverse biased are 1) A 2) B 3) O 4) A.B

20. What is the output Y in the following circuit,

+ 5v +10v when all three inputs A,BC are first 0 and then
a) R
l?
R A
10 v B Y
b) C

5v 1) 1,0 2) 1,1 3) 0,1 4) 0,0

c) 12v R
A
21. B X

R The output (X) of the logic circuit shown in

d)
+ 5v figure

1) (a) , (b) and (d) 1) X  A  B 2) X  A.B

2) (c) only 3) A.B 4) A+B
3) (a), and (c)
22. Which logic gate is represented by following
4) (b) and (d)
combination of logic gates
17. A common emitter amplifier has a voltage gain
of 50 ,an input impendance of 200 8 and an A
output impendance of 400 8 . What is the power Y
gain of amplifier B
1) 1000 2) 25 3) 100 4) 1250 1) NAND 2) AND 3) NOR 4) OR

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23. To get the output 1 for the following circuit, 5. To get an output Y=1 in given circuit which of
the correct choice for the input is the following input will be correct
A
A B
B Y C Y
C
1) A=0, B=1,C=0 A B C A B C
2) A=1, B=0, C=0 1) 1 1 0 2) 0 1 0
3) A=1, B=1, C=0 3) 1 0 0 4) 1 0 1
4) A=1, B=0, C=1 6. Transfer characterstics (out put voltage (vo) VS
input volateg (Vi) for a base biased transistor
CHALLENGER’S EXERCISE in cE configration is as shown in fig. For using
1. A transistor -oscillator using a resonant circuit transistor as a switch, It is used
with an inductor L and a capacitor C in series v0 I
II
produce oscillation of frequency f. If L is III
doubled and C is changed to 4C, the frequency
will be :-
f f vi
1) 2) 8f 3) 4) 2 2 f
4 2 2 1) In region II 2) In region I
3) In region III
2. An amplifier has a voltage gian A V  1000 The
4) Both in region I and III
voltage gain in dB is
1) 30 dB 2) 60 dB 7. The given graph represents V-I chracterstic for
a semi conductor device. Which of the
3) 3 dB 4) 20 dB
follwoing is correct
3. The circuit is equvivalent to
I
NOR NAND NOT A
V

B
1) NOR gate S
2) OR gate 1) It is V-I characterstic for solar cell where,
3) AND gate point A represents open circuit voltage and
4) NAND gate B short circuit current
2) It is for a solar cell and point A and B
4. A P-N photodoide is fabricated from a semi-
represent open circuit voltage and current
conductor with a band gap of 2.5eV. It can respecctively
detect a signal of wavelength 3) It is for a photodiode and point A and B
1) 4000 0 A represent open circuit voltage and currents
2) 6000 0 A respectively
4) It is for LED and points A and B represent
3) 4000 nm
open circuit voltage and short circuit current,
4) 6000 nm respectively

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 PHYSICS
8. The input signal given to a CE amplifier having 12. For given n-p-n transistor R B  100K8 . The
¥ Q´ potential drop across the base -emitter junction
a voltage gain of 150V is Vi  2 cos ¦§ 15t  µ¶ .
3 is 0.6V, then find VBB. If Ic = 1mA and C  100
The corresponding output signal will be
¥ 4Q ´ C
1) 2 cos ¦§ 15t  µ
3¶ RB RC
B
¥ Q´
2) 300 cos ¦§ 15t  µ
3¶
E VC C
¥ Q´ VB
3) 75cos ¦ 15t  µ B
§ 3¶
¥ 4Q ´ 1) 2.6 V 2) 1.6V 3) 10.6V 4) 1.4V
4) 300 cos ¦§ 15t  µ
3¶
13 The resistivity of a pure semiconductor is
0.5 8m . If the electron and hole mobility be
9. A zener diode connected across a source
voltage of 12V such that 6V drops across it.
0.39m 2 / vs and 0.19m 2 / vs respectively the
The power drawn by zener diode is 2.4mw, then
calculate the intrinsic carrier concentration
what is the maximum value of series resistance
1) 2.16 s 1019 / m 3
connected i the circuit
2) 4.32 s 1019 / m 3
1) 5K8 2) 15K8 3) 12K8 4) 6K8
3) 10 20 / m 3
10. A n-p-n transistor is connected in CE
4) None of these
configration in a given amplifier . A load
resistance of 800 8
is connected in collector 14. A p-n-p transistor working in a common base
circuit and voltage drop across it is 0.8 V. If the configration sends 2mA current as the output
current amplification factor is 0.96 and input with B  0.98 . If the device has a leakage
8
resistance is 192 , the voltage gian and power current of 5NA , then the base current is
gain of amplifier will be 1) 280 NA 2) 140 NA
1) 4,3.84 2) 3.69, 3.84 3) 40 NA 4) 35 NA
3) 4,4 4) 4,3.69
15. Which of the following gate will have output
11. Findout the value of Y of 1
A 1 0
B a) b)
Y 1 1

C 0 0
c) d)
1) (A  B).(B  C) 1 0
1) (a) and (b)
2) (A  B).(B  C)
2) (b) and (c)
3) (A  B).(B  C)
3) (c) and (d)
4) (A  B).(B  C) 4) (a) and (d)

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16. In the following circuit, the output Y for all 18. To get output ‘1’ at R, for the given logic gate
possible inputs A and B is expressed by truth circuit the input values must be :
table diagram
A
B Y

A B Y
O O O
O ? ?
1)
? O ? 1) X = 0, Y = 1
? ? ? 2) X =1 , Y = 1
3) X = 0, Y = 0
A B Y 4) X = 1, Y = 0
O O O
O ? O 19. The output of the given logic circuit is :
2)
? O O
? ? ?

A B Y
O O ?
O ? ? 1) AB 2) AB
3)
? O ?
? ? O
3) AB + AB 4) AB + AB

20. The circuit shown below contains two ideal

A B Y diodes, each with a forward resistance of 50Ω .
O O ? If the battery voltage is 6V, the current through
O ? O the 100Ω resistance (in Amperes) is :-
4)
? O O
? ? O

17. For the circuit shown below, the current through

the Zener diode is :

1) 0.027
2) 0.020
1) 5mA 2) zero 3) 14mA 4) 9mA 3) 0.030
4) 0.036

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KEY SHEET BULL’S EYE EXERCISE

CONCEPTUAL BULLETS 1) 1 2) 3 3) 1 4) 2 5) 4
1) 4 2) 3 3) 2 4) 1 5) 1 6) 1 7) 1 8) 3 9) 1 10) 2
6) 2 7) 1 8) 3 9) 3 10) 3 11) 1 12) 2 13) 4 14) 1 15) 3
11) 3 12) 3 13) 1 14) 4 15) 3 16) 3 17) 4 18) 1 19) 3 20) 1

16) 3 17) 1 18) 1 19) 3 20) 2 21) 2 22) 2 23) 4

21) 3 22) 1 23) 2 24) 2 25) 2 CHALLENGER’S EXERCISE

26) 2 27) 1 28) 4 29) 2 30) 4 1) 3 2) 2 3) 1 4) 1 5) 4

31) 3 32) 1 33) 4 34) 3 35) 2 6) 4 7) 1 8) 4 9) 2 10) 1

36) 2 37) 3 38) 2 39) 4 40) 2 11) 2 12) 2 13) 1 14) 4 15) 3

41) 3 42) 3 43) 1 44) 2 45) 3 16) 1 17) 4 18) 4 19) 2 20) 2

fff

130 NEET Master Capsule for Sri Chaitanya Students