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    Silicon PNP Power Transistor: Description

    Uploaded by

    Rigoberto Martinez Lopez
    This document provides specifications for the 2SA940 silicon PNP power transistor. Key specifications include a collector-emitter breakdown voltage of -150V minimum, a DC current gain of 40-140 at -0.5A collector current, and applications in general purpose power amplifiers and vertical output circuits. The transistor has a TO-220C package and a maximum junction temperature of 150°C.

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    © All Rights Reserved
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    Silicon PNP Power Transistor: Description

    Uploaded by

    Rigoberto Martinez Lopez
    13 views3 pages
    This document provides specifications for the 2SA940 silicon PNP power transistor. Key specifications include a collector-emitter breakdown voltage of -150V minimum, a DC current gain of 40-140 at -0.5A collector current, and applications in general purpose power amplifiers and vertical output circuits. The transistor has a TO-220C package and a maximum junction temperature of 150°C.

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    Original Title

    2SA940

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    This document provides specifications for the 2SA940 silicon PNP power transistor. Key specifications include a collector-emitter breakdown voltage of -150V minimum, a DC current gain of 40-140 at -0.5A collector current, and applications in general purpose power amplifiers and vertical output circuits. The transistor has a TO-220C package and a maximum junction temperature of 150°C.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    13 views3 pages

    Silicon PNP Power Transistor: Description

    Uploaded by

    Rigoberto Martinez Lopez
    This document provides specifications for the 2SA940 silicon PNP power transistor. Key specifications include a collector-emitter breakdown voltage of -150V minimum, a DC current gain of 40-140 at -0.5A collector current, and applications in general purpose power amplifiers and vertical output circuits. The transistor has a TO-220C package and a maximum junction temperature of 150°C.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    20 STERN AVE.

    TELEPHONE: (973) 376-2922


    SPRINGFIELD, NEW JERSEY 07081 (212)227-6005
    U.S.A. FAX: (973) 376-8960

    Silicon PNP Power Transistor 2SA940

    DESCRIPTION
    /"*'!•,

    • Collector-Emitter Breakdown Voltage


    :V(BR)CEo=-150V(Min)
    • DC Current Gain
    : h FE =40-140@l c =-0.5A
    • Complement to Type 2SC2073
    ft PIN 1.BASE
    2.COLLECTOR
    3. EMITTER

    APPLICATIONS TO-220C package

    • Designed for use in general purpose power amplifier,


    vertical output applications.
    . - B M
    •* V H lx~
    »
    ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
    U k
    SYMBOL PARAMETER VALUE UNIT !

    A
    ,.'
    .

    VCBO Collector-Base Voltage -150 V


    T JL '^TT^^
    iT-H.
    VCEO Collector-Emitter Voltage -150 V
    K

    VEBO Emitter-Base Voltage -5 V


    " -t rir» *r* j
    -~» R(*
    Ic Collector Current-Continuous -1.5 A
    c
    Total Power Dissipation 4
    PC 25 W
    @ TC=25'C mm
    DIN MIN MAX
    Tj Junction Temperature 150 °c A 15.50 15.90
    B 9.90 10.20
    C 4.20 4.50
    Tstg Storage Temperature Range -55~150 r D 0.70 0.90
    F 3.40 3.70
    G 4.98 5.18
    THERMAL CHARACTERISTICS H 2.68 2.90
    J 0.44 0.60
    SYMBOL PARAMETER MAX UNIT K 13.00 13.40
    L 1.20 1.45
    a 2.70 2.90
    Rth j-c Thermal Resistance, Junction to Case 5.0 •c/w R 2.30 2.70
    s 1.29 1.35
    U 6.45 6.65
    V 8.66 8.86

    NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
    notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
    to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
    NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

    Quality Semi-Conductors
    Downloaded from: http://www.datasheetcatalog.com/
    Silicon PNP Power Transistor 2SA940

    ELECTRICAL CHARACTERISTICS
    TC=25'C unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-Emitter Breakdown Voltage l c =-10mA; IB= 0 -150 V

    V(BR)CBO Collector-Base Breakdown Voltage lc=-1mA; I E =0 -150 V

    V(BR)EBO Emitter-Base Breakdown Voltage ! E =-1mA; l c =0 -5 V

    VcE(sat) Collector-Emitter Saturation Voltage lc= -0.5A; IB= -50mA -1.5 V

    VBE(on) Base-Emitter On Voltage lc= -0.5A ; VCE= -5V -0.85 V

    ICBO Collector Cutoff Current V C B=-120V; le=0 -10 u A

    IEBO Emitter Cutoff Current VEB= -5V; lc= 0 -10 U A

    hFE DC Current Gain lc=-0.5A;V C E=-10V 40 140

    fj Current-Gain — Bandwidth Product lc= -0.5A;VCE= -10V;ftest= 1MHz 4 MHz

    Downloaded from: http://www.datasheetcatalog.com/


    This datasheet has been downloaded from:

    www.DatasheetCatalog.com

    Datasheets for electronic components.

    Downloaded from: http://www.datasheetcatalog.com/

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