N2 Amps 600volts N-Channel MOSFET: Description
N2 Amps 600volts N-Channel MOSFET: Description
N2 Amps 600volts N-Channel MOSFET: Description
N2 Amps,600Volts
N-Channel MOSFET
■ Description
The ET2N60 N-Ceannel enhancement mode silicon gate power MOSFET is
designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
■ Features
RDS(ON) = 5.00Ω@VGS = 10 V
Low gate charge ( typical 9nC)
High ruggedness
Fast switching capability
Avalanche energy specified
Improved dv/dt capability
■ Symbol
■ Thermal Characteristics
Ratings Units
Parameter Symbol
TO-220 TO-220F TO-251 TO-252
*
Thermal Resistance Junction-Ambient RthJA 62.5 50 (110)
Dynamic Characteristics
Input Capacitance CISS -- 200 -- pF
VDS=25V,VGS=0V,
Output Capacitance COSS f=1MHZ -- 20 -- pF
Reverse Transfer Capacitance CRSS -- 4 -- pF
Switching Characteristics
Turn-On Delay Time tD(ON) -- 10 -- ns
Rise Time tR VDD=300V,ID=2.0A, -- 25 -- ns
RG=25Ω
Turn-Off Delay Time tD(OFF) (Note 4, 5) -- 25 -- ns
Fall Time tF -- 30 -- ns
Total Gate Charge QG -- 9 -- nC
VDS=480V, ID=2.0A
Gate-Source Charge QGS VGS=10V -- 1.5 -- nC
(Note 4, 5)
Gate-Drain Charge QGD -- 4.0 -- nC
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage VSD VGS=0V,
ISD=2.0A(TO220,TO220F) -- -- 1.4 V
ISD=0.95A(TO251,TO252)
TO-220,TO-220F -- -- 2.0
Continuous Drain-Source Current ISD A
TO-251, TO-252 -- -- 1.9
TO-220,TO-220F -- -- 8.0
Pulsed Drain-Source Current ISM A
TO-251, TO-252 -- -- 7.6
Reverse Recovery Time tRR ISD=2.0A, -- 230 -- ns
dISD/dt=100A/µs
Reverse Recovery Charge Q RR (Note 4) -- 1.0 -- µC
■ Typical Characteristics
Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area
for TO220 for TO220F
TO220,TO220F
TO251,TO252
Figure 9-3. Maximum Safe Operating Area Figure 10. Maximum Drain Current
for TO251, TO252 vs Case Temperature