DISCRETE SEMICONDUCTORS

DATA SHEET

dbook, halfpage

M3D252

BGY888
860 MHz, 34 dB gain push-pull
amplifier
Product specification 2001 Oct 25
Supersedes data of 1999 Mar 30
NXP Semiconductors Product specification

860 MHz, 34 dB gain push-pull amplifier BGY888

FEATURES PINNING SOT115J

 Excellent linearity PIN DESCRIPTION
 Extremely low noise 1 input
 High gain 2, 3 common
 Excellent return loss properties. 5 +VB
7, 8 common
APPLICATIONS 9 output
 Single module line extender in CATV systems operating
over a frequency range of 40 to 860 MHz.
handbook, halfpage
2 8
1 3 5 7 9
DESCRIPTION
Hybrid high dynamic range amplifier module operating
with a voltage supply of 24 V in a SOT115J package. The
Side view MSA319
high gain module consists of two cascaded stages both in
cascode configuration.
Fig.1 Simplified outline.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Gp power gain f = 50 MHz 33.5 34.5 dB
f = 860 MHz 34  dB
Itot total current consumption (DC) VB = 24 V  340 mA

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
Vi RF input voltage  55 dBmV
Tstg storage temperature 40 +100 C
Tmb operating mounting base temperature 20 +100 C

2001 Oct 25 2
NXP Semiconductors Product specification

860 MHz, 34 dB gain push-pull amplifier BGY888

CHARACTERISTICS
Table 1 Bandwidth 40 to 860 MHz; VB = 24 V; Tcase = 30 C; ZS = ZL = 75 

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Gp power gain f = 50 MHz 33.5 34 34.5 dB
f = 860 MHz 34 35  dB
SL slope cable equivalent f = 40 to 860 MHz 0.5 1.1 2.5 dB
FL flatness of frequency response f = 40 to 860 MHz  0.2 0.5 dB
S11 input return losses f = 40 to 80 MHz 20 25  dB
f = 80 to 160 MHz 18.5 28  dB
f = 160 to 320 MHz 17 28  dB
f = 320 to 640 MHz 15.5 21  dB
f = 640 to 860 MHz 14 18.5  dB
S22 output return losses f = 40 to 80 MHz 20 25.5  dB
f = 80 to 160 MHz 18.5 28.5  dB
f = 160 to 320 MHz 17 26.5  dB
f = 320 to 640 MHz 15.5 20.5  dB
f = 640 to 860 MHz 14 21  dB
S21 phase response f = 50 MHz 135  225 deg
CTB composite triple beat 49 channels flat; Vo = 44 dBmV;  63.5 60 dB
measured at 859.25 MHz
Xmod cross modulation 49 channels flat; Vo = 44 dBmV;  63 59 dB
measured at 55.25 MHz
CSO composite second order 49 channels flat; Vo = 44 dBmV;  64 55 dB
distortion measured at 860.5 MHz
d2 second order distortion note 1  74 65 dB
Vo output voltage dim = 60 dB; note 2 58 60  dBmV
F noise figure f = 50 MHz  4 4.5 dB
f = 550 MHz   5 dB
f = 600 MHz   5 dB
f = 650 MHz   5.5 dB
f = 750 MHz   6 dB
f = 860 MHz  5.5 7 dB
Itot total current consumption (DC) note 3  325 340 mA

Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 805.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 860.5 MHz.
2. Measured according to DIN45004B:
fp = 851.25 MHz; Vp = Vo;
fq = 858.25 MHz; Vq = Vo6 dB;
fr = 860.25 MHz; Vr = Vo 6 dB;
measured at fp + fq  fr = 849.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.

2001 Oct 25 3
NXP Semiconductors Product specification

860 MHz, 34 dB gain push-pull amplifier BGY888

Table 2 Bandwidth 40 to 860 MHz; VB = 24 V; Tcase = 30 C; ZS = ZL = 75 

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Gp power gain f = 50 MHz 33.5 34 34.5 dB
f = 860 MHz 34 35  dB
SL slope cable equivalent f = 40 to 860 MHz 0.5 1.1 2.5 dB
FL flatness of frequency response f = 40 to 860 MHz  0.2 0.5 dB
S11 input return losses f = 40 to 80 MHz 20 25  dB
f = 80 to 160 MHz 18.5 28  dB
f = 160 to 320 MHz 17 28  dB
f = 320 to 640 MHz 15.5 21  dB
f = 640 to 860 MHz 14 18.5  dB
S22 output return losses f = 40 to 80 MHz 20 25.5  dB
f = 80 to 160 MHz 18.5 28.5  dB
f = 160 to 320 MHz 17 26.5  dB
f = 320 to 640 MHz 15.5 20.5  dB
f = 640 to 860 MHz 14 21  dB
S21 phase response f = 50 MHz 135  225 deg
CTB composite triple beat 129 channels flat; Vo = 44 dBmV;  47.5 46 dB
measured at 859.25 MHz
Xmod cross modulation 129 channels flat; Vo = 44 dBmV;  53.5 50 dB
measured at 55.25 MHz
CSO composite second order 129 channels flat; Vo = 44 dBmV;  56 48 dB
distortion measured at 860.5 MHz
d2 second order distortion note 1  74 65 dB
Vo output voltage dim = 60 dB; note 2 58 60  dBmV
F noise figure see Table 1    dB
Itot total current consumption (DC) note 3  325 340 mA

Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 805.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 860.5 MHz.
2. Measured according to DIN45004B:
fp = 851.25 MHz; Vp = Vo;
fq = 858.25 MHz; Vq = Vo 6 dB;
fr = 860.25 MHz; Vr = Vo 6 dB;
measured at fp + fq  fr = 849.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.

2001 Oct 25 4
NXP Semiconductors Product specification

860 MHz, 34 dB gain push-pull amplifier BGY888

Table 3 Bandwidth 40 to 750 MHz; VB = 24 V; Tcase = 30 C; ZS = ZL = 75 

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Gp power gain f = 50 MHz 33.5 34 34.5 dB
f = 750 MHz 34   dB
SL slope cable equivalent f = 40 to 750 MHz 0.2  2.2 dB
FL flatness of frequency response f = 40 to 750 MHz   0.45 dB
S11 input return losses f = 40 to 80 MHz 20 25  dB
f = 80 to 160 MHz 18.5 28  dB
f = 160 to 320 MHz 17 28  dB
f = 320 to 640 MHz 15.5 21  dB
f = 640 to 750 MHz 14 18.5  dB
S22 output return losses f = 40 to 80 MHz 20 25.5  dB
f = 80 to 160 MHz 18.5 28.5  dB
f = 160 to 320 MHz 17 26.5  dB
f = 320 to 640 MHz 15.5 20.5  dB
f = 640 to 750 MHz 14 21  dB
S21 phase response f = 50 MHz 135  225 deg
CTB composite triple beat 110 channels flat; Vo = 44 dBmV;  52.5 50 dB
measured at 745.25 MHz
Xmod cross modulation 110 channels flat; Vo = 44 dBmV;  55.5 51 dB
measured at 55.25 MHz
CSO composite second order 110 channels flat; Vo = 44 dBmV;  61.5 53 dB
distortion measured at 746.5 MHz
d2 second order distortion note 1   65 dB
Vo output voltage dim = 60 dB; note 2 59   dBmV
F noise figure see Table 1    dB
Itot total current consumption (DC) note 3  325 340 mA

Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 691.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 746.5 MHz.
2. Measured according to DIN45004B:
fp = 740.25 MHz; Vp = Vo;
fq = 747.25 MHz; Vq = Vo6 dB;
fr = 749.25 MHz; Vr = Vo 6 dB;
measured at fp + fq  fr = 738.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.

2001 Oct 25 5
NXP Semiconductors Product specification

860 MHz, 34 dB gain push-pull amplifier BGY888

Table 4 Bandwidth 40 to 600 MHz; VB = 24 V; Tcase = 30 C; ZS = ZL = 75 

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Gp power gain f = 50 MHz 33.5 34 34.5 dB
f = 600 MHz 34   dB
SL slope cable equivalent f = 40 to 600 MHz 0  2 dB
FL flatness of frequency response f = 40 to 600 MHz   0.35 dB
S11 input return losses f = 40 to 80 MHz 20 25  dB
f = 80 to 160 MHz 18.5 28  dB
f = 160 to 320 MHz 17 28  dB
f = 320 to 600 MHz 16 21  dB
S22 output return losses f = 40 to 80 MHz 20 25.5  dB
f = 80 to 160 MHz 18.5 28.5  dB
f = 160 to 320 MHz 17 26.5  dB
f = 320 to 600 MHz 16 20.5  dB
S21 phase response f = 50MHz 135  225 deg
CTB composite triple beat 85 channels flat; Vo = 44 dBmV;  56.5 55 dB
measured at 595.25 MHz
Xmod cross modulation 85 channels flat; Vo = 44 dBmV;  58 54 dB
measured at 55.25 MHz
CSO composite second order 85 channels flat; Vo = 44 dBmV;  69.5 56 dB
distortion measured at 596.5 MHz
d2 second order distortion note 1   68 dB
Vo output voltage dim = 60 dB; note 2 61   dBmV
F noise figure (DC) see Table 1    dB
Itot total current consumption note 3  325 340 mA

Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 541.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 596.5 MHz.
2. Measured according to DIN45004B:
fp = 590.25 MHz; Vp = Vo;
fq = 597.25 MHz; Vq = Vo 6 dB;
fr = 599.25 MHz; Vr = Vo 6 dB;
measured at fp + fq  fr = 588.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.

2001 Oct 25 6
NXP Semiconductors Product specification

860 MHz, 34 dB gain push-pull amplifier BGY888

PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J

D
E Z p

A2

1 2 3 5 7 8 9
A
L
F

W e b w M
c
e1
d
U2 Q q2 y M B
B q1 x M B

y M B
p

U1 q

0 5 10 mm
scale

DIMENSIONS (mm are the original dimensions)

A A2 D E L Q Z
UNIT b c d e e1 F p q q1 q2 S U1 U2 W w x y
max. max. max. max. min. max. max.
0.51 2.04 4.15
mm 20.8 9.5 0.25 27.2 13.75 2.54 5.08 12.7 8.8 2.4 38.1 25.4 10.2 4.2 44.75 8.2 6-32 0.25 0.7 0.1 3.8
0.38 2.54 3.85 44.25 7.8 UNC

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC JEITA PROJECTION

04-02-04
SOT115J
10-06-18

2001 Oct 25 7
NXP Semiconductors Product specification

860 MHz, 34 dB gain push-pull amplifier BGY888

DATA SHEET STATUS

DOCUMENT PRODUCT
DEFINITION
STATUS(1) STATUS(2)
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.

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2001 Oct 25 8
NXP Semiconductors Product specification

860 MHz, 34 dB gain push-pull amplifier BGY888

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Quick reference data  The Quick reference data is an
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2001 Oct 25 9
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Printed in The Netherlands R77/05/pp10 Date of release: 2001 Oct 25