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Unisonic Technologies Co., LTD: High Voltage Fast Switching NPN Power Applications

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UNISONIC TECHNOLOGIES CO.

, LTD
UBV45 NPN SILICON TRANSISTOR

HIGH VOLTAGE FAST


SWITCHING NPN POWER
APPLICATIONS

„ DESCRIPTION
The device is manufactured using High Voltage Multi Epitaxial
Planar technology for high switching speeds and high voltage
capability.
The UTC UBV45 is designed for use in Compact Fluorescent
Lamps.

„ FEATURES

* High Voltage Capability


* Low Spread of Dynamic Parameters
* Very High Switching Speed

„ ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Plating Halogen Free 1 2 3
UBV45L-T92-B UBV45G-T92-B TO-92 E C B Tape Box
UBV45L-T92-K UBV45G-T92-K TO-92 E C B Bulk

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Copyright © 2010 Unisonic Technologies Co., Ltd QW-R201-081,D
UBV45 NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
PARAMETER SYMBOL RATINGS UNIT
Collector Emitter Voltage (VBE = 0) VCES 700 V
Collector Emitter Voltage (IB = 0) VCEO 400 V
Emitter Base Voltage (IC = 0) VEBO 9 V
Collector Current IC 0.75 A
Collector Peak Current (tp < 5 ms) ICM 1.5 A
Base Current IB 0.4 A
Base Peak Current (tp < 5 ms) IBM 0.75 A
Total Dissipation at Ta = 25°C PD 0.95 W
Junction Temperature TJ +150 °C
Storage Temperature TSTG -40 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ THERAMAL DATA
PARAMETER SYMBOL RATINGS UNIT
Thermal Resistance Junction-ambient θJA 130 °C /W

„ ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified)


PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Emitter Sustaining Voltage (IB = 0)
VCEO(SUS) IC = 1 mA 400 V
(Note)
IC = 0.2 A , IB = 40 mA 0.2 0.5
Collector Emitter Saturation Voltage (Note) VCE(SAT) IC = 0.3 A , IB = 75 mA 0.3 1 V
IC = 0.4 A , IB = 135 mA 0.4 1.5
IC = 0.2 A , IB = 40 mA 1
Base Emitter Saturation Voltage (Note) VBE(SAT) V
IC = 0.3 A , IB = 75 mA 1.2
Emitter Cut off Current (IC = 0) IEBO VEB = 9 V 1 mA
Collector Cut off Current (VBE = -1.5V) ICEV VCE = 700 V 250 μA
IC = 0.2 A, VCE = 5 V 12 27
DC Current Gain hFE*
IC = 0.4 A, VCE = 5 V 7 20
IC = 0.2 A , VCLAMP = 300 V
Inductive Load Fall Time tF 0.3 μs
IB1 = -IB2 = 40 mA , L = 3 mH
Note: Pulsed: Pulse duration = 300μs, duty cycle = 1.5 %
„ INDUCTIVE LOAD SWITCHING TEST CIRCUIT

(1) Fast electronic switch LC


(2) Non-inductive Resistor
(3) Fast recovery rectifier
(3)

IB1 IC

(1)

VCE
IB

VCLAMP Vcc
RBB(2)
-
VBB
+

UNISONIC TECHNOLOGIES CO., LTD 2 of 4


www.unisonic.com.tw QW-R201-081,D
UBV45 NPN SILICON TRANSISTOR
„ TYPICAL CHARACTERICS

Safe Operating Area Derating Curve


101 140
4

2
120
0 80μs
10 8
6 100
4

2 80
10-1 8 300μs
6
4 60

2
Continuous 40
10-2 8
6
4
20
2
10-3
2 4 6 8 2 4 6 8 2 4 6 0 25 50 75 100 125 150 175
100 101 102 103
VCE (V) TCASE (℃)

UNISONIC TECHNOLOGIES CO., LTD 3 of 4


www.unisonic.com.tw QW-R201-081,D
UBV45 NPN SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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www.unisonic.com.tw QW-R201-081,D

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