Investigation of Zero Voltage Switching Capability For Bidirectional Series Resonant Converter Using Phase-Shift Modulation

8842 IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 34, NO.
9, SEPTEMBER 2019
Investigation of Zero Voltage Switching Capability

for Bidirectional Series Resonant Converter
Using Phase-Shift Modulation
Hwa-Pyeong Park , Student Member, IEEE, Mina Kim , Student Member, IEEE,
and Jee-Hoon Jung , Senior Member, IEEE
Abstract—A series resonant converter (SRC) using a phase-shift bidirectional operation [9]–[13]. In aspect of modulation meth-
modulation (PSM) was invented to implement the bidirectional ods, a single phase-shift modulation (SPSM) is widely adopted
power flow. However, it has a narrow zero voltage switching (ZVS) to operate the DAB converter, because it can easily obtain the
range, which reduces the power conversion efficiency for the light
load condition. In this paper, the ZVS condition of the SRC is soft-switching capability. However, when the transformer turn
analyzed according to the power flow directions. From this analysis, ratio is not 1:1, the DAB converter using the SPSM cannot
the SRC using an extended PSM and single PSM is proposed to obtain the ZVS capability for entire load range [14], [15]. It in-
obtain the soft switching for the entire load range. The analysis of duces poor power conversion efficiency at light load condition.
ZVS condition and performance of proposed control algorithm are In addition, large input and output voltage difference makes
verified using simulation and experimental results with a 500-W
prototype converter. high peak current, which increases switching and conduction
losses [16]–[18]. Other modulation methods, such as extended
Index Terms—Bidirectional operation, phase-shift modulation phase-shift modulation (EPSM), triple phase-shift modulation
(PSM), series resonant converter (SRC), zero voltage switching
(ZVS).
(TPSM), and dual phase-shift modulation (DPSM), have been
proposed to overcome those issues [19]–[26]; however, they re-
I. INTRODUCTION quire higher complexity of circuit implementation than that of
the conventional SPSM.
OWADAYS, sustainable energy sources, such as solar,
N wind, and tide, receive attention as an eco-friendly solu-
tion to reduce the enormous consumption of conventional fossil
The resonant converters have been used to achieve the bidi-
rectional power flow. As previous research, the series and LLC
resonant converters should use both the PWM control and the
fuels. These energy sources are expected to account for much of
phase-shift control to accomplish the bidirectional operation
the electrical energy in the future [1]. The renewable sources can
[27], [28]. In [27], the auxiliary circuit is required to achieve the
be combined with the dc microgrid to be connected to various
bidirectional operation and to obtain the ZVS capability. In [28],
applications. The bidirectional dc/dc converter provides bidirec-
the LLC resonant converter carries out the bidirectional opera-
tional power interface between dc bus and various loads, such
tion using the PWM modulation, which requires an additional
as battery, dc motor, electrical vehicle, grid-connected inverter,
inductor that increases the product cost. The CLLC resonant
and other industrial electric systems [2]–[8]. Therefore, the per-
converter can accomplish the bidirectional operation using the
formance enhancement of the bidirectional dc/dc converter is
pulse frequency modulation (PFM). It can obtain the ZVS capa-
required to obtain high power conversion efficiency with high
bility for the entire load range. However, this converter requires
reliability.
small magnetizing inductance, which induces high circulating
A dual active bridge (DAB) converter has been used for the
current at the high input voltage condition. In addition, it cannot
bidirectional power conversion, which provides galvanic iso-
achieve the seamless power transmission [29], [30].
lation, small number of magnetic components, and seamless
The dual active bridge series resonant converter (DAB-SRC)
has been proposed to regulate the bidirectional power flow [31]–
Manuscript received August 29, 2018; revised October 14, 2018 and Novem- [33]. It can obtain a seamless control capability for the change
ber 17, 2018; accepted December 14, 2018. Date of publication December 18,
2018; date of current version June 10, 2019. This work was supported by the Na-
of the power flow directions, which is similar to the conven-
tional Research Foundation of Korea under Grant NRF-2016R1A2B4011934. tional DAB converter. The DAB-SRC has smaller rms current
Recommended for publication by Associate Editor E. Babaei. (Corresponding than that of the conventional DAB converter for the wide volt-
author: Jee-Hoon Jung.)
The authors are with the School of Electrical and Computer Engineer-
age gain variation, because the DAB converter has triangular
ing, Ulsan National Institute of Science and Technology (UNIST), Ulsan waveforms of the primary and secondary current for non-unity
44919, South Korea (e-mail:, darkrla6@unist.ac.kr; kmaop44@unist.ac.kr; voltage gain conditions. In addition, the series resonant tank
jung.jeehoon@gmail.com).
Color versions of one or more of the figures in this paper are available online
has simple structure compared with the CLLC, CLC, and LCL
at http://ieeexplore.ieee.org. resonant tanks [34]–[36]. However, the DAB-SRC using the
Digital Object Identifier 10.1109/TPEL.2018.2888537 SPSM has a limited ZVS capability according to the voltage
0885-8993 © 2018 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.
See http://www.ieee.org/publications standards/publications/rights/index.html for more information.
Authorized licensed use limited to: Cornell University Library. Downloaded on September 03,2020 at 23:44:07 UTC from IEEE Xplore. Restrictions apply.
PARK et al.: INVESTIGATION OF ZERO VOLTAGE SWITCHING CAPABILITY FOR BIDIRECTIONAL SRC USING PSM 8843
TABLE I
ZVS CAPABILITY COMPARISON OF CONTROL METHODS IN DAB-SRCS
gain, which reduces the power conversion efficiency of the

power converter [31], [33]. The DAB-SRC using the TPSM
has been proposed to obtain small rms current and extended
soft-switching capability. However, this modulation has high
complexity in a practical manner, because it has various control
strategies according to voltage gains and power flow directions
[34]. In addition, it requires a full-bridge structure on both the
primary and secondary sides for the control algorithm. In [37],
the gain scheduled control has been proposed to implement the Fig. 1. Schematic of the bidirectional series resonant converter.
TPSM. It uses a field programmable gate array to speed up its
computation time. In [38], the non-isolated half-bridge struc- side and a full-bridge structure on the secondary side. This
ture was proposed to implement the wide ZVS capability and section shows the operational principles and its mathematical
the bidirectional operation. The duty control can also obtain analysis according to the power flow directions.
the ZVS capability; however, it has the non-isolated structure,
which does not consider the effect of the magnetizing induc-
A. Operational Principles
tance in the bidirectional SRC. In addition, it cannot regulate
the output voltage under the large input voltage variation using Forward and backward power flows are controlled using the
the transformer. Table I shows the ZVS capability comparison EPSM and SPSM at the fixed switching frequency, respectively.
of the control methods for the ZVS in the DAB-SRCs. Fig. 2 shows the control schemes and the operational waveforms
In this paper, a bidirectional SRC using a hybrid phase-shift according to power flow directions, where S1 –S6 are the PWM
modulation (HPSM) is proposed to obtain the soft-switching signals for each power switch, and V1 and V2 are the primary-
capability for entire load range. The soft-switching condition is and the secondary-bridge voltage, respectively. The SPSM con-
analyzed with the phase-shifted voltages and resonant current trols the phase shift between the primary- and the secondary-side
according to the power flow directions. The magnetizing induc- voltage sources when the power flow direction is backward. The
tance is included in this analysis since it is important to design phase-shift angle (φ) using the SPSM is limited to either 90◦
the ZVS condition for the backward power flow. From this anal- or −90◦ according to the power flow direction. On the other
ysis, the proposed control algorithm employs the EPSM and the side, the EPSM has an additional control freedom (α) that con-
SPSM for the forward power flow direction according to the trols the width of the secondary-bridge voltage, which can be
voltage gain and power rating. The proposed control algorithm controlled by the α from 180◦ to 0◦ .
uses the SPSM for the backward power flow direction. The per-
formance of the proposed HPSM is presented and verified using B. Mathematical Analysis
the simulation and experimental results with a 500-W prototype
Fig. 3 shows the equivalent circuits of the bidirectional SRC
SRC.
according to the power flow directions. The magnetizing induc-
tance is considered in the circuit analysis to obtain the precise
II. ANALYSIS
primary and secondary currents. Fig. 3(a) shows the equiva-
Fig. 1 shows the proposed bidirectional series resonant con- lent circuit for the forward power flow. The primary current of
verter (SRC), which has a half-bridge structure on the primary (Ip,f ) and the secondary current of (Is,f ) determines the ZVS
8844 IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 34, NO. 9, SEPTEMBER 2019
condition of the primary side and the secondary side, respec-

tively. The secondary current can be calculated using the mag-
netizing current of im . Fig. 3(b) shows the equivalent circuit
for the backward power flow. The magnetizing inductance is
connected to the power source in parallel. The analysis of the
magnetizing current is significant to obtain the ZVS condition
of the primary and secondary switches. The resonant impedance
can be derived as follows:
1
Xr = jωs Lr + (1)
jωs Cr
where ωs is the angular switching frequency, Cr is the single
resonant capacitor (Cr 1 + Cr 2 ), Cr 1 and Cr 2 are the divided res-
onant capacitors, respectively, and Lr is the resonant inductor.
For the forward power flow, the EPSM regulates the output
voltage. The primary- and secondary-bridge voltages can also
be derived using the Fourier series as follows:
∞
2Vin 1
v1,f (ωs t) = cos (aωs t) (2)
π a=1,3...
a
4nVout ∞
1 aα
v2,f (ωs t) = cos (aωs t − φ) sin (3)
π a=1,3...
a 2
where Vin is the input voltage, Vout is the output voltage, and n is
the transformer turn ratio. The proposed resonant converter can
use the first harmonic approximation (FHA), because the power
is concentrated on the first harmonic [39]. All the operations are
analyzed using the FHA method. From (2) and (3), the phasor
rms voltages can be derived using the Eulers formula as follows:
2Vin
V1,f (aωs ) = √ (4)
Fig. 2. Control schemes according to power flow directions. (a) Forward case. aπ 2
(b) Backward case.
4nVout aα
V2,f (aωs ) = √ [cos (aφ) − j sin (aφ)] sin . (5)
aπ 2 2
Using (1), (4), and (5), the phasor current can be derived as
follows:
V1,f (aωs ) − V2,f (aωs )
Ip,f (aωs ) = . (6)
Xr
From (4)–(6), the transferred real power of the forward power
flow can be derived as follows:
4nVin Vout α f 1
n
Pf = sin (φ) sin (7)
π 2 2 1 − fn 2 Zo
where fn is the normalized switching frequency (fr /fs ) and Zo

is the Lr /Cr . Fig. 4 shows the transferred power according to
the φ and α of the EPSM, where φ is the phase shift between the
primary side and the secondary side, α is the secondary phase
shift, the input voltage of Vin is 400 V, the output voltage of Vout
is 50 V, the turn ratio of n is 4, and the normalized frequency of
fn is 0.9. It shows two degrees of the control freedom to regulate
the output voltage. The switching frequency and the resonant
Fig. 3. Equivalent circuits of the bidirectional SRC according to power flow impedance is significant to transfer the rated power, which is
directions. (a) Forward power flow. (b) Backward power flow. designed in Section III-B.
Fig. 4. Power transmission according to the φ and α.
In the backward power flow case, the primary- and the

secondary-bridge voltage can be derived as follows:
∞
2Vin 1
v1,b (ωs t) = cos (aωs t + φ) (8)
π a=1,3...
a
∞
4nVout 1
v2,b (ωs t) = cos (aωs t). (9)
π a=1,3...
a
It shows that the backward power flow is regulated using

only phase shift between primary- and secondary-bridge volt-
age. From (8) and (9), v1 and v2 can be represented by the Fig. 5. ZVS conditions for the forward power flow. (a) SPSM for the primary
MOSFET. (b) EPSM for the primary MOSFET.
phasor rms voltage as follows:
2Vin
V1,b (aωs ) = √ [cos (aφ) + j sin (aφ)] (10) before turning ON the MOSFETs. From (1) to (3), the inductor
aπ 2 current can be derived as
4nVout
V2,b (aωs ) = √ . (11) 4 Vin
aπ 2 ip,f (ωs t) = sin (ωs t)
π 1 − fn 2 Zo 2
From (1), (10), and (11), the phasor current can be derived as α
follows: −nVout sin (ωs t − φ) sin . (14)
2
V2,b (aωs ) − V1,b (aωs )
Ip,b (aωs ) = . (12)
Xr In the EPSM and SPSM, the inductor current at ωs t = −π/2◦
From (10)–(12), the transferred power to the backward direction shows ZVS capability as follows:
can be derived as follows: ip,f (−90◦ ) = − 1 + M cos (φ) sin (α/2) (15)
4nVin Vout fn 1 ◦
Pb = 2
sin (φ) 2 . (13) ip,f (−90 ) = − 1 + M cos (φ) (16)
π 1 − fn Zo
The backward power flow has a fixed secondary side α value to where M is the input to output voltage gain (nVout /Vin ). While
implement the SPSM. the SPSM has only 1° of the control freedom, the EPSM has 2◦
of the control freedom for designing the ZVS range. Fig. 5(a)
III. DESIGN METHODOLOGY and (b) shows ZVS range according to the modulation methods.
They show that the SPSM induces non-ZVS in the light load
In this sections, soft-switching capability is analyzed us- condition. However, the EPSM can obtain ZVS in the entire
ing the mathematical analysis introduced in previous section. load range by the designed α value.
From the analysis, the resonant tank is analyzed to obtain The phase shift α can be designed by considering the desired
proper operating conditions for transferring the rated power and voltage gain. The maximum voltage gain can be derived using
soft-switching capability. the voltage drop of the parasitic resistances as follows:
A. Soft-Switching Capability n · Vout,m ax + Vdrop,m ax

Mm ax = (17)
Vin,m in
The ZVS capability on the power MOSFETs is important to
achieve high power conversion efficiency in the power converter. where Vout,max is the maximum output voltage, Vdrop,max is the
For the forward power flow, the primary MOSFETs have the same maximum voltage drop of parasitic resistance, and Vin,min is the
current with the inductor current. When the high-side switch minimum input voltage. From (15) and (17), α according to
turns ON, the negative inductor current is required for ZVS the required voltage gain with ZVS condition can be derived as
where θzvs is the ZVS condition which is 90◦ . Using (19), the
phasor of resonant current is lagging compared to the primary
voltage. Fig. 6(b) shows the desired α trajectory to achieve the
ZVS according to the input–output voltage gain.
The ZVS condition for the secondary side MOSFETs is also
significant to obtain high power conversion efficiency. In the
terms of the EPSM, the secondary side current can be derived
using (14) as follows:
is,f (ωs t) = sin (ωs t)

π 1 − fn 2 Zo
α α
M sin (ωs t − φ) sin 2
−M sin (ωs t − φ) sin −
2 ωs Lm
(20)
where Lm is the magnetizing inductance of the transformer.

Using (20), the secondary side current to obtain ZVS can be
derived as
is,f (−90◦ − φ) = − cos (φ)

π 1 − fn 2 Zo
α M cos (2φ) sin α
2
+ M cos (2φ) sin + . (21)
2 ωs Lm
The above-mentioned equation should be negative for ZVS ca-

pability in the high-side switch. It can be rearranged to obtain
ZVS condition as
0≥ 2
− cos (φ)
π 1 − fn Zo
α α
M cos (2φ) sin 2
+ M cos (2φ) sin + . (22)
2 ωs Lm
Fig. 6(c) shows the ZVS capability of the secondary MOSFETs,

Fig. 6. ZVS conditions for the forward power flow. (a) Range of α according
to the voltage gain. (b) α trajectory according to the φ. (c) ZVS condition for which have the extended ZVS range using the EPSM. It shows
the secondary MOSFET. that the secondary MOSFETs have the enlarged ZVS range in the
forward power flow. In addition, they operate under the non-
follows: ZVS condition with the voltage gain below 0.5. As a result, the
proposed EPSM grantees the wide ZVS range on the primary-
Vin,m in and the secondary-side MOSFETs.
α = 2 arcsin . (18)
(n · Vout,m ax + Vdrop,m ax ) · cos (φ) The proposed hybrid control algorithm combining the EPSM
and the SPSM can regulates the output voltage or the output cur-
Fig. 6(a) shows the range of α according to the increment of the
rent with the phase shift of φ between the primary and secondary
voltage gain. The red line shows the desired α according to the
sides. For the forward power control, the EPSM is used for the
input–output voltage gain variation. In the buck mode, α has
light load condition, which has the phase shift of α with the
π/2 to achieve the ZVS. In the boost mode, α is modulated to
control trajectory of (19). The DAB-SRC has the SPSM from
achieve the ZVS for the entire load range as shown in Fig. 5(a).
the middle load to the full load condition. For the backward
The EPSM can achieve the ZVS for the light load condition.
power control, the DAB-SRC only has the SPSM from the light
However, the small α induces large rms current. The desired α
load to the full load condition.
trajectory can be derived using the phasor of the primary current
For the forward power flow, the resonant current is only con-
as follows:
sidered to determine the ZVS condition for the primary MOSFET.
tan (θzvs ) In the backward power flow, the secondary side MOSFETs are de-
α = 2arc sin (19)
M tan (θzvs ) cos (φ) + M sin (φ) cided their ZVS capability by the sum of the inductor current
TABLE II
ZVS CONDITIONS ACCORDING TO THE POWER FLOW DIRECTIONS AND VOLTAGE GAINS
and the magnetizing current, which can be derived as follows:

4
is,b (ωs t) = [sin (ωs t) − M sin (ωs t + φ)]
π 1 − fn 2 Zo
sin (ωs t)
+ (23)
ωs Lm
where M is the input–output voltage gain of the backward
power flow. From (23), the secondary side current to obtain the
ZVS capability can be derived as follows:

◦ π 1 − fn 2 Lr
is,b (−90 ) = −1 + M cos (φ) − . (24)
4fn Lm
Using (24), the ZVS condition for the high-side switch can be
derived as

π 1 − fn 2 Lr
0 ≥ −1 + M cos (φ) − . (25)
4fn Lm
The proposed ZVS condition for the backward power flow
can be extended
with the switching frequency, the resonant
impedance ( Lr /Cr ), and the magnetizing inductance. The
conventional ZVS condition is the same as (16), which does
not consider the magnetizing inductance. It induces the model
error on the ZVS condition for the backward power flow com- Fig. 7. ZVS boundary for the backward power flow. (a) For secondary
pared with (25). Fig. 7(a) shows a secondary side ZVS bound- MOSFET. (b) For primary MOSFET.
ary for the backward power flow. It shows the ZVS conditions
for the buck and boost output voltage transmission. The high The negative value of (26) guarantees ZVS capability to the
resonant impedance, high switching frequency, and small mag- high-side switch. The ZVS condition can be derived using (26)
netizing inductance can extend the ZVS range. The high res- as follows:
onant impedance and switching frequency limits the available
maximum power. The small magnetizing inductance induces 0 ≥ − cos (φ) + M cos (2φ) . (27)
circulating current on the transformer. In this paper, the res-
onant impedance and magnetizing inductance are designed to Fig. 7(b) shows ZVS boundary for the backward power flow
implement the ZVS capability for the backward power flow, using the SPSM. It shows that the boost mode operation induces
which is explained in Section III-B. non-ZVS capability at the light load condition. Therefore, the
For ZVS condition of the primary MOSFETs, the primary cur- buck mode operation makes higher power conversion efficiency
rent can be obtained during the backward power flow as follows: for the backward power flow.
Table II shows the ZVS conditions according to the voltage
4 gain and the power flow directions. For the forward power flow,
ip,b (−90◦ + φ) = [− cos (φ) + M cos (2φ)] .
π 1 − fn 2 Zo the voltage gains of step down and unity cases are obtained using
(26) the SPSM to regulate the output voltage. For the boost voltage
Fig. 8. Design constraint of the proposed control algorithm.
gain, the EPSM should be used to obtain the ZVS capability and
to regulate the output voltage at the light load condition. For the
backward power flow, the DAB-SRC can use the SPSM to obtain
the ZVS capability at the light load condition regardless of its
voltage gain. The resonant structure is not symmetric according
to the forward and backward power directions because of the
magnetizing inductance. For the forward power flow, the load
and the magnetizing inductance are connected in parallel. The
primary current can be derived by (14). The ZVS condition can
be obtained by (15) and (16). The ZVS condition for the forward
power flow is determined by not the magnetizing inductance Fig. 9. Design flowchart of resonant tank and control variables.
but the series resonant impedance and the phase-shift ratio.
For the backward power flow, the source and the magnetizing
inductance are connected in parallel. The secondary current can
be derived by (23). The ZVS condition can be obtained by (25). where Cp is the parallel capacitance of power switch, Vds is the
The magnetizing inductance can extend the ZVS capability in drain–source voltage of the MOSFET, and tdt is the dead time
the backward power flow case. duration. The ZVS current derived in (14), (21), (24), and (26)
The proposed control algorithm using the secondary phase is smaller than (29) and (30), which induces large and small
shift of α has a constraint affected by the voltage gain variations. magnetizing inductance to obtain the ZVS capability. The in-
The large voltage gain variation induces the increment of α to crement of and the decrement of the magnetizing inductance
obtain the ZVS capability. Considering the dead time of the induce higher rms current to the resonant tank and the mag-
PWM signals, the minimum α can be described as shown in netizing inductance to transfer the same power than the rms
Fig. 8. The maximum voltage gain of Mm ax can be derived as current without the parallel capacitor. Therefore, it can reduce
follow: the turn-OFF switching loss; however, it can increase the rms
current of the switch.
tan (θzvs )
Mm ax = (28)
sin α m2 i n [tan (θzvs ) cos (φ) + sin (φ)]
B. Resonant Tank Design
where αm in is the minimum α determined by the minimum dead
time. The available transferred power is changed by the switching
The parallel capacitors or the snubber circuit of the power frequency as shown in (7). When the resonant impedance is
switch can reduce the turn-OFF switching loss [40]. However, fixed, the switching frequency near the resonant frequency can
it reduces the ZVS range according to the increment of ca- transfer the larger power than the switching frequency far from
pacitance. The ZVS capability for the switches turn-ON state the resonant frequency. However, if the switching frequency
requires switch current enough to discharge the parallel ca- is same as the resonant frequency, the power converter can-
pacitor. The amount of the current to obtain the ZVS capa- not regulate the transferred power using the PSM. The switch-
bility for the primary and secondary sides can be derived as ing frequency should be higher than the resonant frequency to
follows: regulate the output power (fs > fr ).
2Cp Vds From (7), the resonant impedance can be selected to transfer
IZVS,pri = − (29) the rated maximum power as follows:
tdt
α f
4Cp Vds Lr 4nMm in Vin Vout
IZVS,sec = − (30) ≤ sin (φ) sin
n
(31)
tdt Cr π 2 Pf ,m ax 2 fn 2 − 1
Fig. 11. Simulation waveforms for forward power flow using EPSM. (a) Unity
voltage gain condition. (b) Maximum voltage gain condition.
the desired maximum power for both the forward and backward
power flow conditions.
As shown in (25), the resonant inductance and the magnetiz-
ing inductance should be designed to obtain the ZVS capability
for the backward power flow. Using (25), the ZVS condition of
the secondary MOSFETs can be derived as follows:

Lm π 1 − fn 2
≤ . (33)
Fig. 10. Simulation waveforms for forward power flow using SPSM. (a) Min- Lr 4fn [−1 + M cos (φ)]
imum voltage gain condition. (b) Unity voltage gain condition. (c) Maximum
voltage gain condition. The maximum voltage gain and the zero degree phase shift are
the worst case to obtain the soft-switching capability. Using
(33), the worst case can be rearranged as
where Pf ,max is the maximum power and Mmin is the mini-
Lm π 1 − fn 2
mum voltage gain. The resonant impedance can be designed ≤ . (34)
with the input–output voltage gain, the maximum power, the Lr 4fn (−1 + M m ax )
switching frequency, and the control variable. For the back- The maximum Lm /Lr ratio can be determined by (34), which
ward power flow, the resonant impedance can be calculated guarantees the soft-switching capability of the power switches.
as For the backward power flow, the transformer turn ratio can

Lr 4nM Vin Vout fn be designed to obtain the ZVS for the primary MOSFETs. In the
≤ sin (φ) 2 . (32) buck mode operation, the ZVS on the primary MOSFETs can be
Cr π 2 Pb,m ax fn − 1
guaranteed as shown in (27). The transformer turn ratio to obtain
From (32), the backward power flow requires higher resonant the soft-switching capability can be derived as follows:
impedance than that of the forward power flow, because the
backward power flow is controlled by the SPSM. Therefore, Vin
n≥ . (35)
the resonant impedance can be determined by (31) to transfer Vout,m in
TABLE III
DESIGN SPECIFICATIONS OF 500-W PROTOTYPE CONVERTER
Fig. 13. Photograph of the prototype SRC.
pacitance can be designed to 290 μH and 10 nF, respectively.

Using (34) and the maximum voltage gain, the inductance ratio
is lower than 0.829 to achieve the ZVS operation. The maximum
magnetizing inductance is 240 μH to achieve the ZVS operation
for the backward power flow.
Fig. 12. Simulation waveforms for backward power flow using SPSM.
IV. EXPERIMENTAL RESULTS
(a) Minimum voltage gain condition. (b) Unity voltage gain condition. (c) Figs. 10–12 show simulation results at the light load condi-
Maximum voltage gain condition.
tion of 50 W (10% of rated power), where V1 is the primary
side bridge voltage, V2 is the secondary side bridge voltage, the
resonant current is same as the resonant inductor current, and
From the derived resonant tank design, Fig. 9 shows the PWM1 and PWM3 are the PWM signals on the switch 1 and
design flowchart of the proposed converter. First, the design the switch 3. Fig. 10 shows the simulation waveforms of the for-
specifications, such as the input and output voltages, the rated ward power flow using the SPSM according to the voltage gain.
power, the switching frequency, and the resonant frequency, are Fig. 10(a) shows the converters operation under the minimum
required. The resonant impedance can be designed to transfer the voltage gain condition, which has the ZVS capability on the
rated power and to obtain the ZVS condition for the backward primary and secondary switches. Fig. 10(b) and (c) shows the
power flow. For example, the input and output voltage is given converters operation under the unity and maximum voltage gain
by 400 V and 40–60 V, respectively. The switching and resonant condition, respectively, which shows non-ZVS operation on the
frequency is 100 and 93.4 kHz, respectively. The rated power is primary switch and the ZVS operation on the secondary switch.
500 W. The maximum and minimum voltage gain is 1.2 and 0.8, Fig. 11 shows the simulation waveforms of the forward
respectively. From (31), the resonant impedance is lower than power flow using the EPSM according to the voltage gain. The
170 to transfer the rated power. From the resonant frequency proposed EPSM extends the ZVS capability at the unity and
and the resonant impedance, the resonant inductance and ca- maximum voltage gain conditions. The power converter can
Fig. 14. Experimental waveforms of forward power flow using the SPSM at the light load. (a) Primary side with the minimum voltage gain. (b) Secondary side
with the minimum voltage gain. (c) Primary side with the unity voltage gain. (d) Secondary side with the unity voltage gain. (e) Primary side with the maximum
voltage gain. (f) Secondary side with the maximum voltage gain.
obtain higher power conversion efficiency using the proposed TABLE IV

SPECIFICATION OF DESIGNED POWER CONVERTER
control algorithm, which can lead the extended ZVS capability.
Fig. 12 shows the simulation waveforms of the backward power
flow using the SPSM according to the voltage gain. Fig. 12(a)
shows the non-ZVS operation on the primary switch and the
ZVS operation on the secondary switch, as shown in Fig. 7.
Fig. 12(b) and (c) shows the ZVS capability on the primary and
secondary switches. The simulation results verify the theoretical
ZVS operation, which is analyzed in Section III.
Table III shows the design specifications of a 500-W prototype
converter. The designed specification can verify the theoretical
analysis. Table IV shows the specification of the designed power
converter. Fig. 13 shows the prototype power converter that in-
cludes all the passive and active components, and the controller. Figs. 14 and 15 show the experimental waveforms of the for-
The resonant tank and magnetizing inductance are designed us- ward power flow direction according to the voltage gain at the
ing (31) and (34). The simulation and experiment are achieved light load condition of 50 W, which is 10% of the rated power,
by the prototype converter, the same specifications to implement where Vds,p and Vds,s are the drain–source voltage on switch 1
the SRC using proposed control algorithm. and switch 3, respectively, Ipri is the primary inductor current,
Fig. 15. Experimental waveforms of forward power flow using the EPSM at the light load condition. (a) Primary side with the unity voltage gain. (b) Secondary
side with the unity voltage gain. (c) Primary side with the maximum voltage gain. (d) Secondary side with the maximum voltage gain.
Fig. 16. Experimental waveforms of the backward power flow using the SPSM at the light load condition. (a) Secondary side with the minimum voltage gain.
(b) Secondary side with the unity voltage gain. (c) Secondary side with the maximum voltage gain.
and Isec is the secondary side current. In Fig. 14, the conven- show the non-ZVS operation on the primary switch and the
tional SPSM is applied to the converter. Fig. 14(a) shows the ZVS operation on the secondary switch. Fig. 15 verifies the
converters operation under the minimum voltage gain condi- extended ZVS capability under the unity and maximum volt-
tion. It shows the ZVS operation on the primary and secondary age gain conditions using the proposed EPSM. All the switches
switches. Fig. 14(b) and (c) shows the converters operations can implement the ZVS operation using the proposed control
under the unity and maximum voltage gain conditions. They algorithm.
Fig. 17. Experimental waveforms with steady-state operation at the rated power. (a) Forward power flow with the minimum voltage gain. (b) Backward power
flow with the minimum voltage gain. (c) Forward power flow with the unity voltage gain. (d) Backward power flow with the unity voltage gain. (e) Forward power
flow with the maximum voltage gain. (f) Backward power flow with the maximum voltage gain.
Fig. 16 shows experimental waveforms of the backward power flow at the no load and maximum M condition. For
power flow direction using the SPSM according to the volt- both the power flows, the ZVS capability is verified with the
age gains at the light load condition of 50 W. The secondary PWM signals, the drain–source voltage, and the resonant cur-
switch can achieve the ZVS for the entire voltage gain range. rent. From the results mentioned above, the proposed control
From Figs. 14–16, the experimental results verify the theoretical algorithm guarantees the ZVS capability for the entire voltage
ZVS condition shown in Section III. Fig. 17 shows experimental and load conditions.
waveforms in the steady-state operation according to the power Fig. 19 shows the step load responses under the power flow
flow directions and the voltage gains. It shows that the proposed transition, which indirectly shows the stability of the SRC using
EPSM can extend the ZVS region compared with the SPSM. In proposed control algorithm at the extreme operating condition.
Fig. 17, all the switches show the ZVS operation at the rated In the forward-to-backward power transition, the SRC using
power condition, which leads high power conversion efficiency proposed control algorithm shows 3.8 V (7.6%) output voltage
in the converter. In addition, the ZVS capability for the entire fluctuation. In the backward-to-forward power transition, the
voltage gain and load conditions can be verified at the no load output voltage fluctuation is 3.6 V (7.2%), which performance
and maximum voltage gain condition, which is the worst ZVS is similar to the forward-to-backward case. The forward-to-
condition. Fig. 18(a) and (b) shows the ZVS operation in the backward case has fast dynamic performance compared with
forward power flow at the no load and maximum M condition. the backward-to-forward case, which makes large output voltage
Fig. 18(c) and (d) shows the ZVS operation in the backward variation.
Fig. 18. ZVS capability at the maximum voltage gain and no-load condition. (a) Simulation waveforms in forward power flow. (b) Experimental waveforms in
forward power flow. (c) Simulation waveforms in backward power flow. (d) Experimental waveforms in backward power flow.
In terms of the power conversion efficiency, the conduction rms current for the secondary switches can be described as
loss of the power switches and the resonant components can be follows:
described as follows:
Is,rms
Pcon,loss = Is,rms 2 R. (36) Iss,rms = (38)
2
The rms current of the primary switches can be described as
where Is,rms is the secondary rms current, which can be derived
follows:
from (21) and (23) according to the power flow direction. The
Ip,rms conduction loss of the resonant capacitor can be derived as
Isp,rms = (37)
2 follows:
where Ip,rms is the primary rms current, which can be derived
from (14) and (26) according to the power flow direction. The Pcap,loss = Ip,rms 2 Resr (39)
ward power flow. The forward power flow has higher power
conversion efficiency than that of the backward power flow, be-
cause the forward power flow has smaller input rms current than
that of the backward power flow. The forward power flow with
the unity voltage gain has the highest power conversion effi-
ciency, which has the smallest rms current. In addition, all the
switches can obtain the ZVS capability. The backward power
flow with the minimum voltage gain shows the worst power con-
version efficiency since it has the highest rms current. Fig. 20(d)
shows power losses at the 50 V and 50 W light load condition.
At this condition, the conduction loss is smaller than that of
the rated load condition. However, the converter shows poor
power conversion efficiency caused by high turn-OFF switching
losses.
V. DISCUSSION
The ZVS capability is significant to the power converter,
because it can reduce electro-magnetic interference noises as
well as enhance the power conversion efficiency. This pa-
per analyzes the ZVS condition of the SRC using the PSM.
In the previous research, the resonant inductor and capacitor
are only considered to obtain the ZVS capability. However, the
Fig. 19. Step load responses of the SRC using proposed control algorithm: magnetizing inductance design is also important to obtain the
(a) Forward-to-backward power transition. (b) Backward-to-forward power
transition. ZVS capability for the backward power flow. In this paper, the
operational principles of the SRC is analyzed with the phase-
shift voltage and the resonant current to obtain the precise ZVS
where Pcap,loss is the conduction loss of the resonant capacitor, condition, which is explained in Sections II-B and III-A. The
Ip,rms is the rms current on the primary side, and Resr is the HPSM is proposed to obtain the soft-switching capability for
equivalent series resistance of the resonant capacitor. both the power flow directions. For the forward power flow,
The turn-ON and turn-OFF switching losses can be described the ZVS condition can be obtained by the EPSM using the
as follows: secondary-side phase shift. For the backward power flow, the
ZVS condition can be obtained by the magnetizing inductance
Pon,loss =∼ 1 Vsw Ion ton fsw (40) and the resonant impedance design.
2
In the power stage design, the resonant impedance is selected
1
Poff,loss ∼
= Vsw Ioff toff fsw (41) to transfer the rated power. The ratio of the magnetizing and
2 resonant inductance is selected to obtain the ZVS capability for
where Vsw is the drain–source voltage of the power switch, Ion the backward power flow. The EPSM is used to obtain the ZVS
is the turn-ON current, ton is the turn-ON time, Ioff is the turn- capability for the forward power flow. The design flowchart and
OFF current, and toff is the turn-OFF current. The turn-ON and the example are explained in Section III-B. From the power con-
turn-OFF currents for the primary and secondary switches can verter, the proposed HPSM has 6.3% higher power conversion
be calculated by using (14) and (20) for the forward power efficiency than that of the conventional SPSM at the light load
flow, and (26) and (23) for the backward power flow, re- condition.
spectively. Under the ZVS operation, the turn-ON loss can be In terms of the controller implementation, the SPSM only
negligible. requires the output voltage sensor. However, the TPSM for the
Fig. 20(a) and (b) shows the power conversion efficiency minimum current operation requires the voltage and current
according to the voltage gains and the power flow directions, sensors. In addition, it has lookup table and high performance
respectively. Fig. 20(c) shows the power loss analysis graphs controller for the converter implementation because of high
at the rated power according to the voltage gains. The for- complexity. The proposed HPSM only requires the output volt-
ward power transmission using the EPSM has 6.3% higher age sensor in the converter. The PI compensated output voltage
power conversion efficiency than that of the SPSM, because error can determine the amount of power and the power flow
the EPSM has the extended ZVS capability at the light load direction. In addition, the proposed SRC can achieve the seam-
condition. The backward power flow has the same power con- less operation without the complex computation. Therefore, the
version efficiency comparing with the HPSM and the SPSM, control complexity of the proposed HPSM is similar to the
because the HPSM has a SPSM operating mode in the back- conventional SPSM.
Fig. 20. Power conversion efficiency curves and loss analysis graphs. (a) Efficiency comparison between the proposed EPSM and the conventional SPSM.
(b) Efficiency comparison according to voltage gains. (c) Power loss graphs at rated power and unity voltage gain. (d) Power losses at 50-W light load condition.
VI. CONCLUSION [2] Z. Zhang, O. C. Thomsen, M. A. E. Andersen, J. D. Schmidt, and H.

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[27] Y. Du, X. Bian, S. Lukic, B. S. Jacobson, and A. Q. Huang, “A novel Hwa-Pyeong Park (M’15) was born in Kimcheon,
wide voltage range bi-directional series resonant converter with clamped South Korea, in 1991. He received the B.S. degree
capacitor voltage,” in Proc. Conf. IEEE Ind. Electron., 2009, vol. 1, in electrical engineering from the Korea Univer-
pp. 82–87. sity of Technology and Education (KOREATECH),
[28] T. Jiang, J. Zhang, X. Wu, K. Sheng, and Y. Wang, “A bidirectional LLC Cheonan, South Korea, in 2014, and the M.S. de-
resonant converter with automatic forward and backward mode transition,” gree in electronic and electrical engineering from the
IEEE Trans. Power Electron., vol. 30, no. 2, pp. 757–770, Feb. 2015. Ulsan National Institute of Science and Technology
[29] J. H. Jung, H. S. Kim, M. H. Ryu, and J. W. Baek, “Design methodology (UNIST), Ulsan, South Korea, in 2016. He has been
of bidirectional CLLC resonant converter for high-frequency isolation of working toward the Ph.D. degree in electronic and
dc distribution systems,” IEEE Trans. Power Electron., vol. 28, no. 4, electrical engineering since 2016.
pp. 1741–1755, Apr. 2013. His main research interests include high-power-
[30] Z. U. Zahid, Z. M. Dalala, R. Chen, B. Chen, and J. S. Lai, “Design of density dc–dc converters, power control algorithm for power converters, and
bidirectional DC-DC resonant converter for vehicle-to-grid (V2G) appli- battery management systems.
cations,” IEEE Trans. Transp. Electrific., vol. 1, no. 3, pp. 232–244, Oct. Mr. Park is a member of the IEEE Power Electronics Society and the Korean
2015. Institute of Power Electronics.
Mina Kim (M’15) was born in Ulsan, South Korea, Jee-Hoon Jung (M’07–SM’14) was born in Suwon,
in 1992. She received the B.S. degree in electronic South Korea, in 1977. He received the B.S. degree
and electrical engineering from the Ulsan National in electronic and electrical engineering, and the M.S.
Institute of Science and Technology (UNIST), Ulsan, and Ph.D. degrees in electrical and computer engi-
South Korea, in 2015, where she is currently working neering from the Pohang University of Science and
toward the Ph.D. degree in electrical and computer Technology (POSTECH), Pohang, South Korea, in
engineering. 2000, 2002, and 2006, respectively.
Her main research interests include dc–dc reso- From 2006 to 2009, he had been a Senior Re-
nant converters, wireless power transfer (WPT) tech- search Engineer with the Digital Printing Division,
nology, and power hardware in-the-loop simulation Samsung Electronics Company Ltd., Suwon. From
(PHILS). 2009 to 2010, he had been a Postdoctoral Research
Ms. Kim is a member of the IEEE Power Electronics Society and the Korean Associate with the Department of Electrical and Computer Engineering, Texas
Institute of Power Electronics. A&M University at Qatar (TAMUQ), Doha, Qatar. From 2011 to 2012, he
had been a Senior Researcher in the Power Conversion and Control Research
Center, HVdc Research Division, Korea Electrotechnology Research Institute
(KERI), Changwon, South Korea. From 2013 to 2016, he had been an Assis-
tant Professor with the School of Electrical and Computer Engineering, Ulsan
National Institute of Science and Technology (UNIST), Ulsan, South Korea,
where he is currently an Associate Professor. His research interests include
dc–dc and ac–dc converters, switched-mode power supplies, motor diagnosis
systems, digital control and signal processing algorithms, power conversion for
renewable energy, and real-time and power hardware-in-the-loop (HIL) simula-
tions of renewable energy and power grids. Recently, he has been researching
high-frequency power converters using wide bandgap devices, smart power
transformers for smart grids, power control algorithms and power line commu-
nications for dc microgrids, and wireless power transfer techniques for home
appliances.
Dr. Jung is a Senior Member of the IEEE Industrial Electronics Society, the
IEEE Power Electronics Society, the IEEE Industry Applications Society, and
the IEEE Power and Energy Society. He had served as a Member of the Editorial
Committee of the Korea Institute of Power Electronics (KIPE) and now serves
as a member of Board of Directors of the KIPE. In addition, he is a Guest Editor
of Energies in MDPI.

Investigation of Zero Voltage Switching Capability For Bidirectional Series Resonant Converter Using Phase-Shift Modulation

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8842 IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 34, NO.

Investigation of Zero Voltage Switching Capability

gain, which reduces the power conversion efficiency of the

condition of the primary side and the secondary side, respec-

where fn is the normalized switching frequency (fr /fs ) and Zo

Fig. 4. Power transmission according to the φ and α.

In the backward power flow case, the primary- and the

It shows that the backward power flow is regulated using

A. Soft-Switching Capability n · Vout,m ax + Vdrop,m ax

is,f (ωs t) =   sin (ωs t)

where Lm is the magnetizing inductance of the transformer.

is,f (−90◦ − φ) =   − cos (φ)

The above-mentioned equation should be negative for ZVS ca-

Fig. 6(c) shows the ZVS capability of the secondary MOSFETs,

and the magnetizing current, which can be derived as follows:

Fig. 8. Design constraint of the proposed control algorithm.

Fig. 13. Photograph of the prototype SRC.

pacitance can be designed to 290 μH and 10 nF, respectively.

obtain higher power conversion efficiency using the proposed TABLE IV

VI. CONCLUSION [2] Z. Zhang, O. C. Thomsen, M. A. E. Andersen, J. D. Schmidt, and H.

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where fn is the normalized switching frequency (fr /fs ) and Zo

is,f (ωs t) = sin (ωs t)

is,f (−90◦ − φ) = − cos (φ)