AOD4184A

40V N-Channel MOSFET

General Description Product Summary

The AOD4184A combines advanced trench MOSFET VDS 40V

technology with a low resistance package to provide ID (at VGS=10V) 50A
extremely low RDS(ON). This device is well suited for high RDS(ON) (at VGS=10V) < 7mΩ
current load applications. RDS(ON) (at VGS = 4.5V) < 9.5mΩ

100% UIS Tested

100% Rg Tested

TO252
DPAK D
Top View Bottom View

D
D

G
S G
S
G S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 50
ID
Current G TC=100°C 40 A
C
Pulsed Drain Current IDM 120
Continuous Drain TA=25°C 13
IDSM A
Current TA=70°C 10
Avalanche Current C IAS, IAR 35 A
C
Avalanche energy L=0.1mH EAS, EAR 61 mJ
TC=25°C 50
B PD W
Power Dissipation TC=100°C 25
TA=25°C 2.3
PDSM W
Power Dissipation A TA=70°C 1.5
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 18 22 °C/W
AD RθJA
Maximum Junction-to-Ambient Steady-State 44 55 °C/W
Maximum Junction-to-Case Steady-State RθJC 2.4 3 °C/W

Rev0 : Sep 2009 www.aosmd.com Page 1 of 6

 AOD4189
P-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AOD4189 uses advanced trench technology and VDS (V) = -40V
design to provide excellent RDS(ON) with low gate ID = -40A (V GS = -10V)
charge. With the excellent thermal resistance of the RDS(ON) < 22mΩ (VGS = -10V)
DPAK package, this device is well suited for high RDS(ON) < 29mΩ (VGS = -4.5V)
current load applications.
100% UIS Tested!
-RoHS Compliant
100% Rg Tested!
-Halogen Free*

TO-252
D-PAK Bottom View
Top View D
D

S G
S
G S

Absolute Maximum Ratings TC=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -40 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C -40
Current B,H TC=100°C ID -28
C A
Pulsed Drain Current IDM -50
C
Avalanche Current IAR -35
C
Repetitive avalanche energy L=0.1mH EAR 61 mJ
TC=25°C 62.5
PD
Power Dissipation B TC=100°C 31
W
TA=25°C 2.5
A
PDSM
Power Dissipation TA=70°C 1.6
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
A,G
Maximum Junction-to-Ambient t ≤ 10s 15 20 °C/W
A,G RθJA
Maximum Junction-to-Ambient Steady-State 41 50 °C/W
Maximum Junction-to-Case D,F Steady-State RθJC 2 2.4 °C/W

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOD4189

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -40 V
VDS=-40V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.7 -1.9 -3 V
ID(ON) On state drain current VGS=-10V, VDS=-5V -50 A
VGS=-10V, ID=-12A 18 22
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 27 33 mΩ
VGS=-4.5V, ID=-8A 23 29
gFS Forward Transconductance VDS=-5V, ID=-12A 35 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.74 -1 V
IS Maximum Body-Diode Continuous Current -20 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1870 pF
Coss Output Capacitance VGS=0V, VDS=-20V, f=1MHz 185 pF
Crss Reverse Transfer Capacitance 155 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 2.5 4.5 6.5 Ω
SWITCHING PARAMETERS
Qg (-10V) Total Gate Charge 31.4 41 nC
Qg (-4.5V) Total Gate Charge VGS=-10V, VDS=-20V, 7.9 10
Qgs Gate Source Charge ID=-12A 7.6 nC
Qgd Gate Drain Charge 6.2 nC
tD(on) Turn-On DelayTime 10 ns
tr Turn-On Rise Time VGS=-10V, VDS=-20V, RL=1.6Ω, 18 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 38 ns
tf Turn-Off Fall Time 24 ns
trr Body Diode Reverse Recovery Time IF=-12A, dI/dt=100A/µs 32 42 ns
Qrr Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs 30 nC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating IDSM are
based on T J(MAX)=150°C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using t ≤300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device TBD mounted to a large heatsink, assuming
a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating. TBD
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
H. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1 ST 2008).
Rev1: Oct 2008
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOD4189

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

50 50
-10V -4.5V VDS=-5V
-4.0V 40
40
-6.0V
30 30
-ID (A)

-ID(A)
VGS=-3.5V

20 20

10 10 125°C
25°C
0 0
0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 4.5
-VDS (Volts) -VGS(Volts)
Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics

30 2

28
Normalized On-Resistance

1.8 VGS=-10V
VGS=-4.5V ID=-12A
26
1.6
RDS(ON) (mΩ )

24 VGS=-4.5V
1.4 ID=-8A
22
1.2
20
VGS=-10V
18 1

16 0.8
0 10 20 30 40 -50 -25 0 25 50 75 100 125 150 175 200
-ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

55 100
ID=-12A 150
50 10

45 1 mJ
40
RDS(ON) (mΩ )

0.1
-IS (A)

35 125°C
125°C 0.01
30 25°C
0.001
25
25°C
0.0001
20

15 0.00001
3 4 5 6 7 8 9 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2

-VGS (Volts) -VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOD4189

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 2800
VDS=-20V
ID=-12A 2400
8 Ciss
2000

Capacitance (pF)
-VGS (Volts)

6 1600

1200
4
800
2 Crss
400 Coss

0 0
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35 40
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 10000
TJ(Max)=175°C
TC=25°C
10µs

1000
100µs
Power (W)
-ID (Amps)

10
RDS(ON)
limited
100
1ms
TJ(Max)=175°C 10ms
TC=25°C DC
1 10
1 10 100 0.00001 0.0001 0.001 0.01 0.1 1
-VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Figure 10: Single Pulse Power Rating Junction-to-
Safe Operating Area (Note F) Case (Note F)

10 150
D=Ton/T In descending order
TJ,PK=Tc+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ Jc Normalized Transient

RθJC=2.4°C/W mJ
Thermal Resistance

0.1 PD

Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOD4189

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 70
-IA, Peak Avalanche Current (A)

60

Power Dissipation (W)

50

40
10
30

20

10

1
0.01 0.1 1 10 100 1000 0
0 25 50 75 100 125 150 175
Time in Avalache, t A (s) TCASE (°C)
Figure 12: Single Pulse Avalanche Capability Figure 13: Power De-rating (Note B)

50 10000
TJ(Max)=150°C
TA=25°C
40
Current rating -ID (A)

1000

30
Power (W)

100
20

10 10

0
1
0 25 50 75 100 125 150 175
1E-04 0.001 0.01 0.1 1 10 100 1000
TCASE (°C) Pulse Width (s)
Figure 14: Current De-rating (Note B) Figure 15: Single Pulse Power Rating Junction-
to-Ambient (Note G)

10
D=Ton/T In descending order 150
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

RθJA=50°C/W
Thermal Resistance

0.1

PD
0.01
Ton
Single Pulse T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOD4189

Gate Charge Test Circuit & Waveform

Vgs
Qg
- -10V
VDC
-
+ Vds Qgs Qgd
VDC
+
DUT
Vgs

Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds ton toff

td(on) tr td(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+

Vgs 10%
Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

2
L EAR= 1/2 LIAR
Vds

Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

 AOD4184A

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 40 V
VDS=40V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.7 2.1 2.6 V
ID(ON) On state drain current VGS=10V, VDS=5V 120 A
VGS=10V, ID=20A 5.8 7
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 9.6 12
VGS=4.5V, ID=15A 7.6 9.5 mΩ
gFS Forward Transconductance VDS=5V, ID=5A 37 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous Current 20 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1200 1500 1800 pF
Coss Output Capacitance VGS=0V, VDS=20V, f=1MHz 150 215 280 pF
Crss Reverse Transfer Capacitance 80 135 190 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 2 3.5 5 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 21 27 33 nC
Qg(4.5V) Total Gate Charge 10 14 17 nC
VGS=10V, VDS=20V, ID=20A
Qgs Gate Source Charge 3 5 6 nC
Qgd Gate Drain Charge 3 6 9 nC
tD(on) Turn-On DelayTime 6 ns
tr Turn-On Rise Time VGS=10V, VDS=20V, RL=1Ω, 17 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 30 ns
tf Turn-Off Fall Time 17 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 20 29 38 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 18 26 34 nC
A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev0 : Sep 2009 www.aosmd.com Page 2 of 6

 AOD4184A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 100
10V
VDS=5V
5V 4V
80 80

60 4.5V 60
ID (A)

ID(A)
40 40
125°C
VGS=3.5V
20 20
25°C

0 0
0 1 2 3 4 5 2 2.5 3 3.5 4 4.5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

9 2.2

Normalized On-Resistance 2
8 VGS=4.5V
VGS=10V
1.8 ID=20A
RDS(ON) (mΩ)

7
1.6 17
1.4
5
6
2
VGS=10V
1.2 VGS=4.5V10
5 ID=15A
1

4 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 200
ID (A)
Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E) 18
Figure 4: On-Resistance vs. Junction Temperature
(Note E)

25 1.0E+02
ID=20A
1.0E+01
20
40
1.0E+00
RDS(ON) (mΩ)

15 1.0E-01 125°C
IS (A)

125°C
1.0E-02
10 25°C
1.0E-03
5 25°C 1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

Rev 0: Sep 2009 www.aosmd.com Page 3 of 6

 AOD4184A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 2500
VDS=20V
ID=20A
8 2000
Ciss

Capacitance (pF)
VGS (Volts)

6 1500

4 1000

Coss
2 500

Crss
0 0
0 5 10 15 20 25 30 0 10 20 30 40
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 900

100.0 10µs 10µs TJ(Max)=175°C

RDS(ON) TC=25°C
600
limited
Power (W)
ID (Amps)

10.0 100µs 17
DC 1ms 5
1.0 10ms 2
300 10
TJ(Max)=175°C
0.1
TC=25°C

0.0 0
0.01 0.1 1 10 100 1E-05 0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe 18
Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC
Thermal Resistance

RθJC=3°C/W 40
1

0.1 PD

Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 0: Sep 2009 www.aosmd.com Page 4 of 6

 AOD4184A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 60
TA=25°C
IAR (A) Peak Avalanche Current

TA=100°C 50

Power Dissipation (W)

40

TA=125°C 30
TA=150°C

20

10

10 0
1 10 100 1000 0 25 50 75 100 125 150 175
Time in avalanche, tA (µs) TCASE (°C)
Figure 12: Single Pulse Avalanche capability (Note Figure 13: Power De-rating (Note F)
C)

60 10000

50 TA=25°C
1000
Current rating ID(A)

40
17
Power (W)

30 100 5
2
20 10
10
10

0 1
0 25 50 75 100 125 150 175 0.00001 0.001 0.1 10 0 1000
TCASE (°C) Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA
Thermal Resistance

1 RθJA=55°C/W 40

0.1

PD
0.01

Ton
Single Pulse T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Rev 0: Sep 2009 www.aosmd.com Page 5 of 6

 AOD4184A

Gate Charge Test Circuit & W aveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & W aveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

ton toff

Unclamped Inductive Switching (UIS) Test Circuit & W aveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev 0: Sep 2009 www.aosmd.com Page 6 of 6