Si4435BDY

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY FEATURES

VDS (V) RDS(on) (Ω) ID (A)
• Halogen-free According to IEC 61249-2-21
Definition
0.020 at VGS = - 10 V - 9.1 • TrenchFET® Power MOSFET
- 30
0.035 at VGS = - 4.5 V - 6.9 • Advanced High Cell Density Process
• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS
• Load Switches
• Battery Switch

SO-8

S
S 1 8 D
S 2 7 D

S 3 6 D G
G 4 5 D

Top View
D
Ordering Information: Si4435BDY-T1-E3 (Lead (Pb)-free)
Si4435BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage VDS - 30
V
Gate-Source Voltage VGS ± 20
TA = 25 °C - 9.1 -7
Continuous Drain Current (TJ = 150 °C)a ID
TA = 70 °C - 7.3 - 5.6
A
Pulsed Drain Current IDM - 50
Continuous Diode Current (Diode Conduction)a IS - 2.1 - 1.25
TA = 25 °C 2.5 1.5
Maximum Power Dissipationa PD W
TA = 70 °C 1.6 0.9
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
t ≤ 10 s 40 50
Maximum Junction-to-Ambienta RthJA
Steady State 70 85 °C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 18 22
Notes:
a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 72123 www.vishay.com

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SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA -1 -3 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
VDS = - 30 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS µA
VDS = - 30 V, VGS = 0 V, TJ = 55 °C -5
On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 10 V - 40 A
VGS = - 10 V, ID = - 9.1 A 0.015 0.020
Drain-Source On-State Resistancea RDS(on) Ω
VGS = - 4.5 V, ID = - 6.9 A 0.025 0.035
Forward Transconductancea gfs VDS = - 10 V, ID = - 9.1 A 24 S
a VSD IS = - 2.1 A, VGS = 0 V - 0.8 - 1.2 V
Diode Forward Voltage
Dynamicb
Total Gate Charge Qg 33 70
Gate-Source Charge Qgs VDS = - 15 V, VGS = - 10 V, ID = - 9.1 A 5.8 nC
Gate-Drain Charge Qgd 8.6
Turn-On Delay Time td(on) 10 15
Rise Time tr VDD = - 15 V, RL = 15 Ω 15 25
Turn-Off Delay Time td(off) ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω 110 170 ns
Fall Time tf 70 110
Source-Drain Reverse Recovery Time trr IF = - 2.1 A, dI/dt = 100 A/µs 60 90
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

50 50
VGS = 10 V thru 6 V
TC = - 55 °C
5V 25 °C
40 40
4V
I D - Drain Current (A)

I D - Drain Current (A)

30 30 125 °C

20 20

10 3V 10

0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.040 2400

0.035
R DS(on) - On-Resistance (Ω)

0.030 1800
VGS = 4.5 V Ciss

C - Capacitance (pF)
0.025

0.020 1200
VGS = 10 V
0.015

0.010 600
Coss
Crss
0.005

0.000 0
0 10 20 30 40 50 0 5 10 15 20 25 30

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

10 1.6
VDS = 15 V VGS = 10 V
ID = 9.1 A ID = 9.1 A
VGS - Gate-to-Source Voltage (V)

8 1.4
R DS(on) - On-Resistance
(Normalized)

6 1.2

4 1.0

2 0.8

0 0.6
0 10 20 30 40 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature

50 0.10

0.08
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)

TJ = 150 °C
10 0.06
ID = 9.1 A

TJ = 25 °C 0.04

0.02

1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

Document Number: 72123 www.vishay.com

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.6 30

0.4 24
ID = 250 µA
VGS(th) Variance (V)

0.2 18

Power (W)
0.0 12

- 0.2 6

- 0.4 0
- 50 - 25 0 25 50 75 100 125 150 10-2 10-1 1 10 100 600
TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power

100
Limited by R(DS)on* IDM Limited

P(t) = 0.0001

10
I D - Drain Current (A)

P(t) = 0.001
ID(on)
1 Limited P(t) = 0.01

P(t) = 0.1

P(t) = 1
TA = 25 °C
0.1 Single Pulse P(t) = 10
DC

BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2
Notes:
0.1
0.1 PDM

0.05
t1
t2
t1
1. Duty Cycle, D =
0.02 t2
2. Per Unit Base = R thJA = 70 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse

0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72123.

Document Number: 72123 www.vishay.com

S09-0767-Rev. D, 04-May-09 5
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Revision: 08-Feb-17 1 Document Number: 91000