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    11DF4 UltraFastRecoveriDiode 1A 400V Datasheet

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    marte129
    This document summarizes the specifications of an 11DF4 ultra-fast recovery diode. It has the following key features: - Miniature size, ultra-fast recovery time, low forward voltage drop, and high efficiency. It is available from 200-400V and can handle currents up to 1.57A and surge currents up to 30A. - Electrical characteristics include a maximum peak reverse voltage of 400V, peak forward voltage below 1.25V at 1A, and reverse recovery time below 30ns. - Thermal characteristics depend on mounting but the junction to ambient thermal resistance is below 115°C/W without additional cooling.

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    11DF4 UltraFastRecoveriDiode 1A 400V Datasheet

    Uploaded by

    marte129
    33 views5 pages
    This document summarizes the specifications of an 11DF4 ultra-fast recovery diode. It has the following key features: - Miniature size, ultra-fast recovery time, low forward voltage drop, and high efficiency. It is available from 200-400V and can handle currents up to 1.57A and surge currents up to 30A. - Electrical characteristics include a maximum peak reverse voltage of 400V, peak forward voltage below 1.25V at 1A, and reverse recovery time below 30ns. - Thermal characteristics depend on mounting but the junction to ambient thermal resistance is below 115°C/W without additional cooling.

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    This document summarizes the specifications of an 11DF4 ultra-fast recovery diode. It has the following key features: - Miniature size, ultra-fast recovery time, low forward voltage drop, and high efficiency. It is available from 200-400V and can handle currents up to 1.57A and surge currents up to 30A. - Electrical characteristics include a maximum peak reverse voltage of 400V, peak forward voltage below 1.25V at 1A, and reverse recovery time below 30ns. - Thermal characteristics depend on mounting but the junction to ambient thermal resistance is below 115°C/W without additional cooling.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    33 views5 pages

    11DF4 UltraFastRecoveriDiode 1A 400V Datasheet

    Uploaded by

    marte129
    This document summarizes the specifications of an 11DF4 ultra-fast recovery diode. It has the following key features: - Miniature size, ultra-fast recovery time, low forward voltage drop, and high efficiency. It is available from 200-400V and can handle currents up to 1.57A and surge currents up to 30A. - Electrical characteristics include a maximum peak reverse voltage of 400V, peak forward voltage below 1.25V at 1A, and reverse recovery time below 30ns. - Thermal characteristics depend on mounting but the junction to ambient thermal resistance is below 115°C/W without additional cooling.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 5

    FRD Type :11DF4

    OUTLINE DRAWING
    FEATURES
    * Miniature Size
    * Ultra - Fast Recovery
    * Low Forward Voltage drop
    * Low Power Loss, High Efficiency
    * High Surge Capability
    * 200 Volts thru 400 Volts Types Available
    * 52mm Inside Tape Spacing Package Available

    Maximum Ratings Approx Net Weight:0.33g

    Rating Symbol 11DF4 Unit


    Repetitive Peak Reverse Voltage VRRM 400 V
    Non-repetitive Peak Reverse Voltage VRSM 440 V
    Ta=18°C ∗1 50Hz Half Sine
    Average Rectified Output Current IO 1.0 A
    Ta=57°C ∗2 Wave Resistive Load
    RMS Forward Current IF(RMS) 1.57 A
    50Hz Half Sine Wave,1cycle,
    Surge Forward Current IFSM 30 A
    Non-repetitive
    Operating JunctionTemperature Range Tjw - 40 to + 150 °C
    Storage Temperature Range Tstg - 40 to + 150 °C

    Electrical • Thermal Characteristics


    Characteristics Symbol Conditions Min. Typ. Max. Unit
    Peak Reverse Current IRM Tj= 25°C, VRM= VRRM - - 20 µA
    Peak Forward Voltage VFM Tj= 25°C, IFM= 1.0A - - 1.25 V
    Reverse Recovery Time trr -di/dt=50A/µs, IFM=1A, Ta=25 - - 30 ns
    Junction to ∗1 : Without Fin 115
    Thermal Resistance Rth(j-a) - - °C/W
    Ambient ∗2 : P.C. Board mounted 81
    ∗1 : Without Fin or P.C. Board
    ∗2 : P.C. Board mounted(L=8mm,Print Lands =10x10mm,Both Sides)
    11DF_ OUTLINE DRAWING (Dimensions in mm)
    FORWARD CURRENT VS. VOLTAGE

    11DF4
    INSTANTANEOUS FORWARD CURRENT (A) 10

    2
    Tj=25°C
    Tj=150°C
    1

    0.5

    0.2

    0.1
    0 0.4 0.8 1.2 1.6 2.0
    INSTANTANEOUS FORWARD VOLTAGE (V)

    0° 180°
    θ
    CONDUCTION ANGLE AVERAGE FORWARD POWER DISSIPATION

    11DF4
    1.6
    D.C.
    AVERAGE FORWARD POWER DISSIPATION (W)

    1.4

    RECT 180°
    1.2
    HALF SINE WAVE
    RECT 120°
    1.0

    RECT 60°
    0.8

    0.6

    0.4

    0.2

    0
    0 0.4 0.8 1.2 1.6
    AVERAGE FORWARD CURRENT (A)
    0° 180°
    θ
    CONDUCTION ANGLE AVERAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE
    Without Fin or P.C. Board
    11DF4
    1.6

    1.4
    D.C.
    AVERAGE FORWARD CURRENT (A)

    1.2
    RECT 180°
    HALF SINE WAVE
    1.0
    RECT 120°

    0.8
    RECT 60°
    0.6

    0.4

    0.2

    0
    0 25 50 75 100 125 150
    AMBIENT TEMPERATURE (°C)

    0° 180°
    θ
    CONDUCTION ANGLE AVERAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE
    P.C. Board mounted (L=8mm,Print Land=10×10mm,Both Sides)
    11DF4

    1.6 D.C.
    AVERAGE FORWARD CURRENT (A)

    1.2
    RECT 180°
    HALF SINE WAVE
    RECT 120°

    0.8
    RECT 60°

    0.4

    0
    0 25 50 75 100 125 150
    AMBIENT TEMPERATURE (°C)
    SURGE CURRENT RATINGS
    f=50Hz,Half Sine Wave,Non-Repetitive,No Load
    11DF4
    35

    30
    SURGE FORWARD CURRENT (A)

    25

    20

    15

    10

    5 I FSM

    0.02s
    0
    0.02 0.05 0.1 0.2 0.5 1 2
    TIME (s)

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