6MBP15XSF060-50 IGBT Modules

IGBT MODULE (X series)

600V / 15A / IPM
Features
Low-side IGBTs are separate emitter type
Short circuit protection
Temperature sensor output function
Overheating protection
Under voltage protection
Fault signal output function
Input interface : TTL (3.3V/5V) Active high logic

Applications
AC 100 ~ 240V three phase inverter drive for small power
AC motor drives (such as compressor motor drive for
air conditioner, compressor motor drive for heat pump
applications, fan motor drive, ventilator motor drive)

Terminal assign and Internal circuit

VB(U) Pin No. Pin Name Pin Description
3 NC 36
VB(V) 3 VB (U) High-side bias voltage for U-phase IGBT driving
5

7
VB(W) P
32
5 VB (V) High-side bias voltage for V-phase IGBT driving
7 VB (W) High-side bias voltage for W-phase IGBT driving
9
IN(HU)
IN VB 9 IN (HU) Signal input for high side U-phase
10 IN (HV) Signal input for high side V-phase
Vcc OUT
11 IN (HW) Signal input for high side W-phase
U
GND Vs 30 12 VCCH High-side control supply
IN(HV) 13 COM Common supply ground
10 IN VB
14 IN (LU) Signal input for low side U-phase
Vcc OUT
15 IN (LV) Signal input for low side V-phase
V
GND Vs 28 16 IN (LW) Signal input for low side W-phase
IN(HW) 17 VCCL Low-side control supply
11 IN VB
18 VFO Fault output
VCCH
12 Vcc OUT 19 IS Over current sensing voltage input
13
COM
GND Vs
W
26 20 COM Common supply ground
21 TEMP Temperature sensor output
IN(LU)
14 UIN 22 N (W) Negative bus voltage input for W-phase
UOUT
IN(LV) 23 N (V) Negative bus voltage input for V-phase
15 VIN
N(U)
24
16
IN(LW)
WIN
24 N (U) Negative bus voltage input for U-phase
VCCL VOUT
26 W Motor W-phase output
17 Vcc
28 V Motor V-phase output
VFO N(V)
18 Fo 23 30 U Motor U-phase output
19
IS
IS 32 P Positive bus voltage input
COM
WOUT 36 NC No Connection
20 GND
N(W)
TEMP 22
21 TEMP

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Absolute Maximum Ratings at Tj=25°C, VCC=15V (unless otherwise specified)

Items Symbol Characteristics Unit Remarks
DC Bus Voltage VDC 450 V Note *1
Bus Voltage (Surge) VDC(Surge) 500 V Note *1
Collector-Emitter Voltage VCES 600 V
Collector Current IC@25 15 A Note *2
VCC≧15V, VB (*)≧15V
30 A
Inverter block

Note *2, *3, *4

Peak Collector Current ICP@25
VCC≧13V, VB (*)≧13V
20 A
Note *2, *3, *4
Diode Forward current IF@25 15 A Note *2
Peak Diode Forward current IFP@25 30 A Note *2
Collector Power Dissipation PD_IGBT 32.5 W per single IGBT TC =25°C
FWD Power Dissipation PD_FWD 25.5 W per single FWD TC =25°C
Junction Temperature Tj 150 °C
Operating Junction Temperature TjOP -40 ~ +150 °C
High-side Supply Voltage VCCH -0.5 ~ 20 V Applied between VCCH -COM
Low-side Supply Voltage VCCL -0.5 ~ 20 V Applied between VCCL-COM
VVB(U)-COM Applied between
High-side Bias Absolute Voltage VVB(V)-COM -0.5 ~ 620 V VB(U)-COM, VB(V)-COM,
VVB(W)-COM VB(W)-COM
VB(U)
Control circuit block

High-side Bias Voltage for

VB(V) -0.5 ~ 20 V Note *4
IGBT gate driving
VB(W)
VU Applied between
High-side Bias offset Voltage VV -5 ~ 600 V U-COM, V-COM, W-COM
VW Note *5
-0.5 ~ VCCH+0.5
Input Signal Voltage VIN V Note *6
-0.5 ~ VCCL+0.5
Input Signal Current IIN 3 mA sink current
Fault Signal Voltage VFO -0.5 ~ VCCL+0.5 V Applied between VFO-COM
Fault Signal Current IFO 1 mA sink current
Over Current sensing Input Voltage VIS -0.5 ~ VCCL+0.5 V Applied between IS-COM
Junction Temperature Tj 150 °C
Operating Case Temperature TC -40 ~ +125 °C See Fig.1-1
Storage Temperature Tstg -40 ~ +125 °C
Isolation Voltage Viso AC 1500 Vrms Sine wave, 60Hz t=1min, Note *7
Note *1 : Applied between P-N(U), P-N(V), P-N(W)
Note *2 : Pulse width and duty were limited by Tjmax.
Note *3 : VCC is applied between VCCH -COM, VCCL-COM.
Note *4 : VB (*) is applied between VB(U)-U, VB(V)-V, VB(W)-W.
Note *5 : ‌Over 13.0V applied between VB(U)-U, VB(V)-V, VB(W)-W. This IPM module might make incorrect response if the high-side bias offset voltage is less than
-5V.
Note *6 : Applied between IN(HU)-COM, IN(HV)-COM, IN(HW)-COM, IN(LU)-COM, IN(LV)-COM, IN(LW)-COM.
Note *7 : Applied between shorted all terminal and IMS (Insulated Metal Substrate).

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Electrical Characteristics
Inverter block (Tj=25°C unless otherwise specified)
Description Symbol Conditions min. typ. max. Unit
Zero gate Voltage VCE=600V Tj =25°C - - 1 mA
ICES
Collector current VIN =0V Tj =125°C - - 10 mA
IC =1.5A
- 0.90 1.10
VCC =+15V Tj =25°C
Collector-Emitter VB (*)=+15V IC =15A
VCE(sat) - 1.60 1.90 V
saturation Voltage VIN =5V Tj =125°C
Note *4 IC =15A
- 1.75 2.10
Tj =125°C
IF=15A Tj =25°C - 1.60 1.90
FWD Forward voltage drop VF V
VIN =0V Tj =125°C - 1.50 -
Turn-on time ton 0.55 0.90 1.30
Turn-on delay td(on) - 0.75 -
VDC =300V
Turn-on rise time tr IC =15A - 0.15 -
VCE-IC Cross time of turn-on tc(on) VCC =15V - 0.35 0.60
VB (*)=15V
Turn-off time toff - 0.90 1.30 µs
Tj =125°C
Turn-off delay td(off) VIN =0V <-> 5V - 0.80 -
Turn-off fall time tf See Fig.2-1 - 0.10 -
Note *4
VCE-IC Cross time of turn-on tc(off) - 0.15 0.30
FWD Reverse Recovery time trr - 0.20 -

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Control circuit block (Tj=25°C unless otherwise specified)

Description Symbol Conditions min. typ. max. Unit
VCCL=15V VIN =5V - 0.6 0.9
Circuit current of Low-side ICCL mA
VCCL=15V VIN =0V - 0.6 0.9
VCCH =15V VIN =5V - 1.25 1.9
Circuit current of High-side ICCH mA
VCCH =15V VIN =0V - 1.25 1.9
VB (U)=15V, VIN =5V - - 0.20
Circuit current of Bootstrap circuit (per one uint) ICCHB VB (V)=15V, mA
VB (W)=15V VIN =0V - - 0.20
Vth(on) - 2.1 2.6 V
Input Signal threshold voltage Note *8
Vth(off) 0.8 1.3 - V
Pw≥0.9µs
Input Signal threshold hysteresis voltage Vth(hys) 0.35 0.80 - V
VIN =0V to 5V rise up,
Operational input pulse width of turn-on tIN(ON) 0.5 - - µs
Note *6, Note *8
VIN =5V to 0V fall down
Operational input pulse width of turn-off tIN(OFF) 0.7 - - µs
Note *6, Note *8
Input current IIN VIN =5V, Note *6 0.7 1.0 1.5 mA
Input pull-down resistance RIN Note *6 3.3 5.0 7.2 kΩ
VIS =0V, VFO terminal pull up to 5V by
VFO(H) 4.9 - - V
Fault Output Voltage 10kΩ
VFO(L) VIS =1V, IFO =1mA - - 0.95 V
Fault Output pulse width tFO Note *9, See Fig.2-2, 2-3 20 - - µs
Over Current Protection Voltage Level VIS(ref) VCC =15V 0.455 0.48 0.505 V
Note *3, *10
Over Current Protection Delay time td(IS) See Fig.2-2 0.3 0.8 1.3 µs
TC =90°C 2.63 2.77 2.91 V
Output Voltage of temperature sensor V(temp) Note *11
TC =25°C 0.88 1.13 1.39 V
LVIC Overheating protection TOH 136 143 150 °C
See Fig.2-6
TOH Hysteresis TOH(hys) 4 10 20 °C
Vcc Under Voltage Trip Level of Low-side VCCL(OFF) 10.3 - 12.5 V
Tj<150°C
Vcc Under Voltage Reset Level of Low-side VCCL(ON) 10.8 - 13.0 V
See Fig.2-3
Vcc Under Voltage hysteresis VCCL(hys) - 0.5 - V
Vcc Under Voltage Trip Level of High-side VCCH(OFF) 8.3 - 10.3 V
Tj<150°C
Vcc Under Voltage Reset Level of High-side VCCH(ON) 8.8 - 10.8 V
See Fig.2-4
Vcc Under Voltage hysteresis VCCH(hys) - 0.5 - V
VB Under Voltage Trip Level VB(OFF) 10.0 - 12.0 V
Tj<150°C
VB Under Voltage Reset Level VB(ON) 10.5 - 12.5 V
See Fig.2-5
VB Under Voltage hysteresis VB(hys) - 0.5 - V
Tj =25°C
VF(BSD) 0.90 1.4 1.90
IF(BSD)=10mA
Forward voltage of Bootstrap diode V
Tj =25°C
VF(BSD) 2.3 4.3 6.3
IF(BSD)=100mA
Note *8 : This IPM module might make incorrect response if the input signal pulse width is less than t IN(on) and t IN(off) .
Note *9: ‌Fault signal is asserted corresponding to an “Over-current protection”, an “Under-voltage protection” at low-side, and an “Over-heat protection”.
Under the condition of “Over-current protection” or “Under-voltage protection” or “Over-heat protection“, the fault signal is asserted continuously while
these conditions are continuing. However, the minimum fault output pulse width is minimum 20µsec even if very short failure condition (which is less than
20µs) is triggered.
Note *10 : Over current protection is functioning only for the low-side arms.
Note *11 : Fig.1-1 shows the measurement position of temperature sensor.

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Thermal Characteristics
Description Symbol min. typ. max. Unit
Junction to Case Thermal Resistance
(per single IGBT) Rth(j-c)_IGBT - - 3.85 °C/W
Note *12
Junction to Case Thermal Resistance
(per single FWD) Rth(j-c)_FWD - - 4.95 °C/W
Note *12
Note *12: ‌Thermal compound with good thermal conductivity should be applied evenly with about +100µm~+200µm on the contacting surface of this device and heat-
sink.

Mechanical Characteristics
Description Symbol Conditions min. typ. max. Unit
Tighten torque - Mounting screw: M3 0.59 0.69 0.98 Nm
Heat-sink side flatness - Note. *13 0 - 100 µm
Weight - - - 9.3 - g
Note *13: ‌Fig.1-2 shows the measurement position of heat sink flatness

Recommended Operation Conditions

All voltages are absolute voltages referenced to Vcc –potential unless otherwise specified.
Description Conditions min. typ. max. Unit
DC Bus Voltage VDC 0 300 400 V
High-side Bias Voltage for IGBT gate driving VB (*) 13.0 15.0 18.5 V
High-side Supply Voltage VCCH 13.5 15.0 16.5 V
Low-side Supply Voltage VCCL 13.5 15.0 16.5 V
ΔVB -1 - 1
Control Supply variation V/µs
ΔVCC -1 - 1
Input signal voltage VIN 0 - 5 V
Voltage for current sensing VISC 0 - 5 V
Potential difference of between COM to N (including surge) VCOM_N -5 - 5 V
Dead time for preventing arm-short (Tc≤125°C) tDEAD 1.0 - - µs
Allowable output current (Note *14) IO - - 15.0 A rms
Allowable minimum input pulse width PWIN(on) 0.5 - - µs
(Note *15, Note *16) PWIN(off) 0.7 - - µs
PWM Input frequency fPWM - - 20 kHz
Operating Junction Temperature Tj (ope) -30 - 150 °C
Note *14 : VDC=300V, VCCH =VCCL=VB (*)=15V, PF=0.8, Sinusoidal PWM, 3phase modulation, Tj ≤150°C ,Tc≤100°C , fPWM =5kHz, fo=200Hz, Ks=0.9
Note *15 : In
‌ the pulse width of 0.5us, the loss of IGBT increases for the saturation operation.
To reduce the loss of IGBT, please enlarge the pulse width more than the switching time of IGBT.
Note *16 : This IPM module might response according to input signal pulse even when the input signal pulse width is less than PWIN(on) and PWIN(off) .

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Package outline dimensions

0.40±0.1
10.6 ±0.1
2.6 ±0.1
26.0 ±0.5

3.2 ±0.1

29.4 ±0.5
14.7 ±0.5
14.0 ±0.5

0.40 ±0.1
13.0

3.83 ±0.25

(0.6)
14.13 ±0.5

5.63 ±0.5

0.13 ±0.13
※ Note.1
8.96 ±0.3
13.0 ±0.3

4.76 ±0.3

Note ※1: ‌The IMS(Insulated Metal Substrate) deliberately protruded from back surface of case.
It is improved of thermal conductivity between IMS and heat-sink.

Pin No. Pin Name Pin No. Pin Name Pin No. Pin Name
3 VB(U) 14 IN(LU) 22 N(W)
5 VB(V) 15 IN(LV) 23 N(V)
7 VB(W) 16 IN(LW) 24 N(U)
9 IN(HU) 17 VCCL 26 W
10 IN(HV) 18 VFO 28 V
11 IN(HW) 19 IS 30 U
12 VCCH 20 COM 32 P
13 COM 21 TEMP 36 NC

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Marking

6MBP15XSF

Note : ‌Product code A1 means current ratings , and “L” is marked.

Product code A2 means variations , and “F” is marked.

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An example of application circuit.

Fig. shows an example of an application circuit.

Bootstrap negative electrodes

should be connected to U,V,W
terminals directly and separated
from the main output wires

ZD1 ZD1 ZD1

C4 C4 C4

VB(U)
C3 C3 C3 3 NC 36 Bus voltage
VB(V)
5 (positive)
VB(W) P
7 32

IN(HU) 3×HVIC
9 IN VB
3×BSD
Vcc OUT
U
GND Vs 30

IN(HV)
10 IN VB 6×IGBT 6×FWD

Vcc +5V Vcc OUT Bulk

GND Vs
V
28 M capacitor
C6
IN(HW)
11 IN VB
VCCH
12 Vcc OUT
C1 COM W
13 GND Vs 26
MPU 10kΩ LVIC
IN(LU)
14 UIN
UOUT
15
IN(LV)
VIN
N(U)
<C> R1
24
IN(LW) Ns
16 WIN

17
VCCL
Vcc
VOUT Bus voltage
R1
C1
18
VFO
Fo
N(V)
23
<C> (negative)
C5 ZD2
15V IS
19 IS
WOUT
R1
<C>
COM
GND 20 GND
N(W)
TEMP 22
21 TEMP

<A>
COMP R2
<B> Long wiring here might
C2 D1
OR cause short circuit failure
Long GND wiring here COMP R2
<B> *Wiring Inductance should
might generate noise to C2 D1 be less than 10nH.
input and cause IGBT COMP <B>
R2
malfunction. C2 D1
Long wiring here might cause
Vref=VIS(ref) OC level fluctuation and
malfunction.

Note *1: ‌Input signal for drive is High-Active. There is a pull-down resistor built in the IC input circuit. To prevent malfunction, the wiring of each input should be as short
as possible. When using R-C coupling circuit, make sure the input signal level meet the turn-on and turn-off threshold voltage.
Note *2: ‌By the function of the HVIC, it is possible of the direct coupling to microprocessor (MPU) without any photo-coupler or pulse-transformer isolation.
Note *3: ‌VFO output is open drain type. It should be pulled up to the positive side of a 5V power supply by a resistor of about 10kW.
Note *4: ‌To prevent erroneous protection, the wiring of (A), (B), (C) should be as short as possible.
Note *5: ‌The time constant R2-C2 of the protection circuit should be selected approximately 1.5µs.
Over current (OC) shutdown time might vary due to the wiring pattern. Tight tolerance, temp-compensated type is recommended for R2, C2.
Note *6: ‌Please set the threshold voltage of the comparator reference input to be same as the IPM OC trip reference voltage VIS(ref) .
Note *7: Please
‌ use high speed type comparator and logic IC to detect OC condition quickly.
Note *8: If
‌ negative voltage of R1 at the switching timing is applied, the schottky barrier diode D1 is recommended to be inserted parallel to R1.
Note *9: ‌All capacitors should be mounted as close to the terminals of the IPM as possible. (C1, C4 : narrow temperature drift, higher frequency and DC bias
characteristic ceramic type are recommended, and C3, C5: narrow temperature drift, higher frequency and electrolytic type.)
Note *10: ‌To prevent surge destruction, the wiring between the snubber capacitor and the P terminal ,Ns node should be as short as possible. Generally a 0.1µ to 0.22µF
snubber capacitor (C6) between the P terminal and Ns node is recommended.
Note *11: ‌Two COM terminals (13 & 20 pin) are connected inside the IPM, it must be connected either one to the signal GND outside and leave another one open.
Note *12: ‌It is recommended to insert a zener-diode (22V) between each pair of control supply terminals to prevent surge destruction.
Note *13: ‌If signal GND is connected to power GND by broad pattern, it may cause malfunction by power GND fluctuation. It is recommended to connect signal GND and
power GND at only a point.

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Fig.1-1: ‌The measurement position of temperature sensor. Fig.1-2: ‌The measurement position of heat sink flatness

Temperature sensor position

Approx. 7.0

Approx.4.5
Measurement position
- +
Approx.0.7

Approx. 6.3 +
-
Heat sink side
Tc measurement position
SIDE VIEW TOP VIEW

Fig.2-1: Switching
‌ waveforms

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Fig.2-2: Operation
‌ sequence of Over current protection

OC detected

Operation sequence of Over Current protection

t1: ‌IS input voltage does not exceed VIS (ref), while the collector current of the lower side IGBT is under the normal operation.
t2: ‌When IS input voltage exceeds VIS (ref), the OC is detected.
t3: ‌The fault output VFO is activated and all lower side IGBT shut down simultaneously after the over current protection delay time td(IS) . Inherently there is
dead time of LVIC in td(IS) .
t4: ‌After the fault output pulse width tFO, the OC is reset. Then next input signal is activated.

Fig.2-3: Operation
‌ sequence of VCCL Under voltage trip (lower side arm)

Input signal

VCCL supply voltage

VCCL(ON) VCCL(ON) VCCL(ON)

VCCL(OFF) VCCL(OFF)

UV detected
UV detected UV detected

Lower side IGBT

Collector Current

VFO output voltage

tFO
tFO
20µs(min.)

<1> <2> <3> <4> <3>

Operation sequence of VCCL Under Voltage protection (lower side arm)

When VCCL is under 4V, UV and fault output are not activated.
<1> ‌When VCCL is under VCCL(ON), all lower side IGBTs are OFF state.
After VCCL rises VCCL(ON), the fault output V FO is released (high level).
And the LVI C starts to operate, then next input is activated.
<2> ‌The fault output V FO is activated when VCCL falls below VCCL(OFF), and all lower side IGBT remains OFF state.
When the voltage drop time is less than 20µs, the fault output  pulse width is generated minimum 20µs and all lower side IGBTs are OFF state in spite
of input signal condition during that time.
<3> ‌UV is reset after t FO when VCCL exceeds VCCL(ON) and the fault output V FO is reset simultaneously.
And the LVI C starts to operate, then next input is activated.
<4> When
‌ the voltage drop time is more than t FO, the fault output  pulse width is generated and all lower side IGBTs are OFF state in spite of input signal
condition during the same time.

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Fig.2-4: Operation
‌ sequence of VCCH Under voltage trip (upper side arm)

Input signal

VCCH supply voltage

VCCH(ON) VCCH(ON)
VCCH(OFF)

UV detected
UV detected

Upper side IGBT

Collector Current

VFO output voltage

High-level
(no fault output)

<1> <2> <3>

Operation sequence of VCCH Under Voltage protection (upper side arm)

<1> ‌When VCCH is under VCCH(ON), the upper side IGBT is OFF state.
After VCCH exceeds VCCH(ON), the HVI C starts to operate. Then next input is activated.
The fault output V FO is constant (high level) not to depend on VCCH .
<2> ‌After VCCH falls below VCCH(OFF), the upper side IGBT remains OFF state.
But the fault output V FO keeps high level.
<3> ‌The HVI C starts to operate after UV is reset, then next input is activated.

Fig.2-5: Operation
‌ sequence of VB Under voltage trip (upper side arm)

Input signal

VB(*) supply voltage

VB(ON) VB(ON)
VB(OFF)

UV detected
UV detected

Upper side IGBT

Collector Current

UV detected
VFO output voltage

High-level
(no fault output)

<1> <2> <3>

Operation sequence of VB(*)(Note.*4) Under voltage protection (upper side arm)

<1> ‌When VB(*) is under VB(ON), the upper side IGBT is OFF state.
After VB(*) exceeds VB(ON), the HVIC starts to operate. Then next input is activated.
The fault output VFO is constant (high level) not to depend on VB(*). (Note*14)
<2> ‌After VB(*) falls below VB(OFF), the upper side IGBT remains OFF state.
But the fault output VFO keeps high level.
<3> ‌The HVIC starts to operate after UV is reset, then next input is activated.

Note *14: ‌The fault output is not given HVIC bias conditions.

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Fig.2-6: Overheat
‌ protection

Lower side arm

Input signal

Lower side IGBT

collector current

TOH
TOH(hys)
LVIC TOH -TOH(hys)
temperature

VFO
>tFO(min.)
output voltage

Voltage of
TEMP terminal

<1> <2> <3> <4>

Operation sequence of the Overheat operation

This function is applied to “6MBP**VXF060-50”.

The IPM has the over-heating protection (OH) function by monitoring the LVIC temperature.
The TOH sensor position is shown in Fig.1-1.
<1> The collector current of the lower side IGBT is under the normal operation while the LVIC temperature does not exceed TOH .
<2> The IPM shutdown all lower side IGBTs while the LVIC temperature exceeds TOH .
<3> The TEMP terminal continue to output the voltage which correspond to temperature of LVIC even if IPM is in OH condition.
<4> The fault status is reset when the LVIC temperature drops below (TOH -TOH (hys)). The all lower side IGBTs restarted to normal operation.

WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2016.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to
obtain the latest specifications.

2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied,
under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji
Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's
intellectual property rights which may arise from the use of the applications described herein.

3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When
using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment
from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame
retardant, and free of malfunction.

4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.
• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.

5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is
imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such
as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty.
• Transportation equipment (mounted on cars and ships) • Trunk communications equipment
• Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
• Medical equipment

6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without
limitation).
• Space equipment • Aeronautic equipment • Nuclear control equipment
• Submarine repeater equipment

7. Copyright ©1996-2016 by Fuji Electric Co., Ltd. All rights reserved.

No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.

8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set
forth herein.

12
Technical Information IGBT Modules

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Global www.fujielectric.com/products/semiconductor/
中国 www.fujielectric.com.cn/products/semiconductor/
Europe www.fujielectric-europe.com/components/semiconductors/
North America www.americas.fujielectric.com/components/semiconductors/

Information
日本
1 半導体総合カタログ www.fujielectric.co.jp/products/semiconductor/catalog/
2 製品情報 www.fujielectric.co.jp/products/semiconductor/model/
3 アプリケーションマニュアル www.fujielectric.co.jp/products/semiconductor/model/igbt/application/
4 技術資料 www.fujielectric.co.jp/products/semiconductor/model/igbt/technical/
5 マウンティングインストラクション www.fujielectric.co.jp/products/semiconductor/model/igbt/mounting/
6 IGBT 損失シミュレーションソフト www.fujielectric.co.jp/products/semiconductor/model/igbt/simulation/
7 AT-NPC 3-Level 損失シュミレーションソフト www.fujielectric.co.jp/products/semiconductor/model/igbt/simulation_3level/
8 富士電機技報 www.fujielectric.co.jp/products/semiconductor/journal/
9 製品のお問い合わせ www.fujielectric.co.jp/products/semiconductor/contact/
10 改廃のお知らせ www.fujielectric.co.jp/products/semiconductor/discontinued/

Global
1 Semiconductors General Catalog www.fujielectric.com/products/semiconductor/catalog/
2 Product Information www.fujielectric.com/products/semiconductor/model/
3 Application Manuals www.fujielectric.com/products/semiconductor/model/igbt/application/
4 Technical Documents www.fujielectric.com/products/semiconductor/model/igbt/technical/
5 Mounting Instructions www.fujielectric.com/products/semiconductor/model/igbt/mounting/
6 IGBT Loss Simulation Software www.fujielectric.com/products/semiconductor/model/igbt/simulation/
7 AT-NPC 3-Level Loss Simulation Software www.fujielectric.com/products/semiconductor/model/igbt/simulation_3level/
8 Fuji Electric Journal www.fujielectric.com/products/semiconductor/journal/
9 Contact www.fujielectric.com/products/semiconductor/contact/
10 Revised and discontinued product information www.fujielectric.com/products/semiconductor/discontinued/

中国
1 半导体综合目录 www.fujielectric.com.cn/products/semiconductor/catalog/
2 产品信息 www.fujielectric.com.cn/products/semiconductor/model/
3 应用手册 www.fujielectric.com.cn/products/semiconductor/model/igbt/application/
4 技术资料 www.fujielectric.com.cn/products/semiconductor/model/igbt/technical/
5 安装说明书 www.fujielectric.com.cn/products/semiconductor/model/igbt/mounting/
6 IGBT 损耗模拟软件 www.fujielectric.com.cn/products/semiconductor/model/igbt/simulation/
7 AT-NPC 3-Level 损耗模拟软件 www.fujielectric.com.cn/products/semiconductor/model/igbt/simulation_3level/
8 富士电机技报 www.fujielectric.com.cn/products/semiconductor/journal/
9 产品咨询 www.fujielectric.com.cn/products/semiconductor/contact/
10 产品更改和停产信息 www.fujielectric.com.cn/products/semiconductor/discontinued/
2015-10