IRFZ34, SiHFZ34

Power MOSFET

FEATURES
PRODUCT SUMMARY
• Dynamic dV/dt Rating
VDS (V) 60
Available
RDS(on) (Ω) VGS = 10 V 0.050 • 175 °C Operating Temperature
• Fast Switching RoHS*
Qg (Max.) (nC) 46 COMPLIANT
Qgs (nC) 11 • Ease of Paralleling
Qgd (nC) 22 • Simple Drive Requirements
Configuration Single • Lead (Pb)-free Available
D
DESCRIPTION
TO-220
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
G
cost-effectiveness.
The TO-220 package is universally preferred for all
S commercial-industrial applications at power dissipation
D levels to approximately 50 W. The low thermal resistance
G S
and low package cost of the TO-220 contribute to its wide
N-Channel MOSFET
acceptance throughout the industry.

ORDERING INFORMATION
Package TO-220
IRFZ34PbF
Lead (Pb)-free
SiHFZ34-E3
IRFZ34
SnPb
SiHFZ34

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 60
V
Gate-Source Voltage VGS ± 20
TC = 25 °C 30
Continuous Drain Current VGS at 10 V ID
TC = 100 °C 21 A
Pulsed Drain Currenta IDM 120
Linear Derating Factor 0.59 W/°C
Single Pulse Avalanche Energyb EAS 200 mJ
Maximum Power Dissipation TC = 25 °C PD 88 W
Peak Diode Recovery dV/dtc dV/dt 4.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175
°C
Soldering Recommendations (Peak Temperature) for 10 s 300d
10 lbf · in
Mounting Torque 6-32 or M3 screw
1.1 N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 259 µH, RG = 25 Ω, IAS = 30 A (see fig. 12).
c. ISD ≤ 30 A, dI/dt ≤ 200 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.

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IRFZ34, SiHFZ34

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 62
Case-to-Sink, Flat, Greased Surface RthCS 0.50 - °C/W
Maximum Junction-to-Case (Drain) RthJC - 1.7

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 60 - - V
VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.065 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V
Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA
VDS = 60 V, VGS = 0 V - - 25
Zero Gate Voltage Drain Current IDSS µA
VDS = 48 V, VGS = 0 V, TJ = 150 °C - - 250
Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 18 Ab - - 0.050 Ω
Forward Transconductance gfs VDS = 25 V, ID = 18 A 9.3 - - S
Dynamic
Input Capacitance Ciss - 1200 -
VGS = 0 V,
Output Capacitance Coss VDS = 25 V, - 600 - pF
f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance Crss - 100 -
Total Gate Charge Qg - - 46
ID = 30 A, VDS = 48 V,
Gate-Source Charge Qgs VGS = 10 V - - 11 nC
see fig. 6 and 13b
Gate-Drain Charge Qgd - - 22
Turn-On Delay Time td(on) - 13 -
Rise Time tr VDD = 30 V, ID = 30 A, - 100 -
ns
Turn-Off Delay Time td(off) RG = 12 Ω, RD = 1.0 Ω, see fig. 10b - 29 -
Fall Time tf - 52 -
Between lead, D
Internal Drain Inductance LD - 4.5 -
6 mm (0.25") from
package and center of G
nH
Internal Source Inductance LS die contact - 7.5 -
S

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current IS MOSFET symbol D

- - 30
showing the
A
integral reverse G

Pulsed Diode Forward Currenta ISM p - n junction diode S - - 120

Body Diode Voltage VSD TJ = 25 °C, IS = 30 A, VGS = 0 Vb - - 1.6 V

Body Diode Reverse Recovery Time trr - 120 230 ns
TJ = 25 °C, IF = 30 A, dI/dt = 100 A/μs
Body Diode Reverse Recovery Charge Qrr - 0.7 1.4 nC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

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 IRFZ34, SiHFZ34

Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics, TC = 175 °C Fig. 4 - Normalized On-Resistance vs. Temperature

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IRFZ34, SiHFZ34

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area

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 IRFZ34, SiHFZ34

RD
VDS

VGS
D.U.T.
RG
+
- VDD

10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

VDS
90 %

10 %
VGS
td(on) tr td(off) tf
Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

L
VDS
VDS
Vary tp to obtain tp
required IAS VDD
RG D.U.T.A +
V DD VDS
-
I AS
10 V
tp 0.01 Ω IAS

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

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IRFZ34, SiHFZ34

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.

QG 50 kΩ
10 V 12 V 0.2 µF
0.3 µF

QGS QGD +
VDS
D.U.T. -

VG
VGS

3 mA

Charge
IG ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test

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 IRFZ34, SiHFZ34

Peak Diode Recovery dV/dt Test Circuit

+ Circuit layout considerations

D.U.T.
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-

- +
-

RG • dV/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by duty factor "D"
• D.U.T. - device under test

Driver gate drive

P.W.
Period D=
P.W. Period

VGS = 10 V*

D.U.T. ISD waveform

Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD

Re-applied
voltage Body diode forward drop
Inductor current

Ripple ≤ 5 % ISD

* VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

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