IGBT Manual

<IGBT MODULES>
7th Generation IGBT Module NX type / std type Application Note
7th Generation IGBT Module T-Series

Application Note
NX Type & std Type
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7 Generation T Series NX type / std type Application Note
Table of Contents
1. Features of the 7th Generation T-Series Module ................................................................................................. 3
1.1. FEATURES OF THE 7TH GENERATION IGBT AND DIODE CHIP .................................................................................... 4
1.2. PACKAGING TECHNOLOGY ................................................................................................................................... 6
1.3. STRUCTURE (PARTS AND MATERIALS) ................................................................................................................... 8
2. Glossary ............................................................................................................................................................... 10
2.1. COMMON .......................................................................................................................................................... 10
2.2. MAXIMUM RATINGS ............................................................................................................................................ 11
2.3. TEMPERATURE RATINGS .................................................................................................................................... 11
2.4. THERMAL RATINGS AND CHARACTERISTICS ......................................................................................................... 11
2.5. ELECTRICAL CHARACTERISTICS ......................................................................................................................... 12
3. Product label information ................................................................................................................................... 13

3.1. CONFIGURATION OF THE PART NUMBER .............................................................................................................. 13
3.2. LABELING ......................................................................................................................................................... 14
3.3. TWO-DIMENSIONAL BARCODE CONFIGURATION.................................................................................................... 15
4. Line up (List of available parts) ......................................................................................................................... 16

5. Application ........................................................................................................................................................... 18
5.1. EXAMPLE OF APPLICATION TO A GENERAL-PURPOSE INVERTER ............................................................................. 18
5.2. EXAMPLE OF APPLICATION TO A GENERAL-PURPOSE SERVO AMPLIFIER ................................................................. 19
5.3. EXAMPLE OF APPLICATION TO PV/UPS ................................................................................................................. 20
6. Safety standard (UL Standard) ........................................................................................................................... 21

7. Handling Precautions .......................................................................................................................................... 24
7.1. HANDLING PRECAUTIONS................................................................................................................................... 24
7.2. FLAME RETARDANCE ......................................................................................................................................... 25
8. Precautions on Actual use.................................................................................................................................. 26

8.1. METHOD OF ATTACHING THE MODULE TO THE HEAT SINK ...................................................................................... 26
8.2. POWER MODULE IMPLEMENTATION ..................................................................................................................... 28
8.3. STAND-OFF RECOMMENDED USE (NX TYPE)......................................................................................................... 30
8.4. THERMALLY CONDUCTIVE (HEAT DISSIPATING) GREASE APPLICATION EXAMPLE ...................................................... 31
8.5. CONCEPT OF THERMAL RESISTANCE ................................................................................................................... 32
8.6. EXAMPLE OF THERMOCOUPLE ATTACHMENT ....................................................................................................... 33
8.7. SNUBBER CIRCUIT ............................................................................................................................................. 35
8.8. OTHER ............................................................................................................................................................. 37
9. How to use the IGBT module.............................................................................................................................. 38

9.1. IGBT MODULE SELECTION .................................................................................................................................. 38
9.2. RECOMMENDED DRIVING CONDITIONS AND DRIVING CIRCUIT ................................................................................ 38
9.3. GATE DRIVE POWER SUPPLY .............................................................................................................................. 40
9.4. DEAD TIME SETTING .......................................................................................................................................... 42
9.5. SHORT CIRCUIT PROTECTION ............................................................................................................................. 43
9.6. PARALLEL CONNECTION OF IGBT MODULES ......................................................................................................... 45
10. Power loss and heat dissipation design ....................................................................................................... 48

10.1. HOW TO CALCULATE THE POWER LOSS ............................................................................................................... 48
10.2. CALCULATION OF TEMPERATURE RISE ................................................................................................................ 51
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1. Features of the 7th Generation T-Series Module
NX Type std Type
In recent years, demand for industrial equipment such as general purpose inverters, elevators, uninterruptible power
supply units (UPS), wind power / photovoltaic power generation, servo amplifiers and similar has been increasing more
and more as the demand for more efficient energy use and longer life of equipment is increasing. In order to realize
power consumption and high reliability, we developed "IGBT module T series (NX type, std type)" with the 7th generation
IGBT and diode mounted and improved internal structure of the package. The T series realizes reduction of power loss,
compact and lightweight package, rich lineup, simplification of assembly process of applied products.
1) Reduced power loss of the applied products

The 7th Generation chipset features new thinner IGBT chips and RFC diode chips (1200 V products, 1700V product). By
adopting the 7th Generation chipset, it is possible to reduce the power loss of the applied products.
2) Compact and lightweight package with new package structure, rich lineup
In the 7th generation IGBT module, a new structure is adopted for NX and std type respectively. In the NX type, a resin-
insulated copper baseplate with an insulating part and a base part integrated is adopted, and the solder between the
insulating part and the base part which was necessary in the conventional product is not used. DP (Direct Potting) resin
is used as an internal filler. In the std type, the internal structure of the main electrode is laminated and a thick copper-
ceramic-copper base plate is adopted. Both NX and std types have low inductance that reduces by 30% compared to
conventional models by optimizing the internal layout of the module. Both NX and std type offer an extensive line-up of
650V, 1200V and 1700V breakdown voltage.
3) Simplification of the assembly process of the applied products

Optional pre-applied phase change thermal interface material (PC-TIM) makes it possible to eliminate the grease coating
process. In addition, the NX type offers optional press-fit pins to eliminate the soldering process to the control board.
Thus, it is possible to simplify the assembly process of the applied products.
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1.1. Features of the 7th Generation IGBT an d Diode Chip
In order to realize the reduction of the on-state loss and the switching loss leading to the improvement of the energy
saving performance of the product, the 7th generation charge storage type IGBT (CSTBT ™) and MOS (Metal Oxide
Semiconductor) chip structure has been optimized using thinner wafers. The 7th generation diode chip has been made
with thinner wafer and has applied the RFC (Relaxed Field of Cathode) structure using backside diffusion layer formation
technology.
※ CSTBT™: Our proprietary IGBT utilizing carrier accumulation effect

※ RFC diode: P layer is partially added on the cathode side, holes are injected at the time of recovery, and by making
the recovery waveform soft the diode can suppress the rise of steep voltage
Reduction of on-voltage (VCEsat) and turn-off loss (Eoff)
Figure 1-1 shows the trade-off characteristic comparison (1200 V withstand voltage) between the 7th generation IGBT
and the conventional 6th generation with on-voltage (VCEsat) and turn-off loss (Eoff). The 7th generation IGBT reduces the
ON voltage by about 0.2 V and the turn-off loss by about 7% compared with the 6th generation IGBT.
The IGBT chip improves the trade-off characteristic of this on-voltage and turn-off loss with every generation.
In the 7th generation IGBT chip, this trade-off has been improved by making thinner wafers and optimizing the surface
structure.
120
Tvj=150℃, VCC=600V, VGE=15V, dv/dt=10kV/μs
115
Turn off energy: Eoff (μJ/A)
110 6th generation
105
7th generation ~7% Reduction
100
~0.2V Reduction
95
90
1.6 1.7 1.8 1.9 2 2.1 2.2
ON state voltage VCEsat (V)
Tvj=150℃, VGE=15V, IC=450A, chip
Figure 1-1. Tradeoff Comparison
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Improved controllability of turn off loss (Eoff) and dv/dt (off) by RG
The IGBT module can control the switching speed by changing the external gate resistance RG.
The 7th generation IGBT module improves the controllability of turn off loss (Eoff) and dv/dt (off) by this RG.
12
Tvj=25℃, Vcc=600V, Ic=450A, VGE=15V
10
dv/dt off (kV/μs) max-dv/dt
CM450DX-24T
RG=2Ω
8
6
RG=10Ω
4
35 40 45 50 55
Turn off energy :Eoff (mJ)

Tvj=125℃, Vcc=600V, Ic=450A, VGE=15V
Figure 1-2. dv/dt off - Turn-off loss
RG = 2Ω 200ns / div RG = 10Ω 200ns / div
Ic: 200A / div Ic: 200A / div
VCE: 200V / div VCE: 200V / div

GND level
Figure 1-3. Turn-off waveforms (CM450DX-24T)
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1.2. Packaging Technolog y
Package structure and features (NX type)
6th Generation Internal structure 7th Generation Internal Structure

Multiple Substrates Encapsulation: gel Single substrate Encapsulation: DP resin
Insulator Solder Baseplate Common substrate: Insulated Metal Baseplate
Item 6th Generation NX 7th Generation NX Advantage
Internal inductance
1 0.7 (Ls 30% Reduction)
(ratio)
Package size
152 × 62 × 17 mm 152 × 62 × 17 mm (Compatible package)
(W * D * H)
Weight※ 350 g 300 g (15% lighter)
Soldering pins
Terminal shape Soldering pins (Assembly simplification)
Press-fit pins
※ Comparison between CM600DX-24T and CM600DX-24S1
・ Internal structure of the 7th generation module (NX type)

A resin insulated copper base board with an insulating part and a base part integrated is adopted, and the solder between the
insulation part and the base part which was necessary in the conventional product is not used. In addition, DP resin is used
instead of general gel for filler.
・ Compatible and light weight package

We adopted a conventional NX type compatible package and reduced the weight by 15% by a new internal structure. In addition,
by increasing the thickness and width of the copper circuit pattern inside the module and by using an optimized single substrate
structure instead of multiple conventional insulating substrates, the chip mounting area is expanded to improve the rated current
in the same package.
・ Press-fit pin compatible

By applying press-fit terminals on the top of the module into the through holes of the control board, it is possible to
connect all at once. This eliminates the need for soldering the module terminals to the control board through holes, thus
simplifying the assembly process. For details, please refer to the application note for press-fit pins.
・ PC-TIM (option)
It is possible to eliminate grease application step by pre-application of PC-TIM (Phase Change Thermal Interface Material) to
the back side of the product. For details, refer to the application note of PC-TIM.
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Package structure and characteristics (std type)
6th Generation Internal Structure 7th Generation Internal Structure

Multiple substrates Encapsulation: gel Single substrate Encapsulation: gel
Insulator Solder Baseplate Common substrate: Thick Metal Substrate
6th Generation Main Terminal Structure 7th Generation Main Terminal Structure
Wire connection Ultrasonic connection Parallel plate structure
Item 6th Generation std 7th Generation std Advantage
Internal inductance
1 0.7 (Ls 30% Reduction)
(ratio)
Package size ※ (20% Footprint
110 × 80 × 29 mm 108 × 62× 30mm
(W * D * H) Reduction)
Weight※ 580 g 260 g (55% lighter)

※ Comparison with CM600DY-24S and CM600DY-24T
・ Internal structure of the 7th generation module (std type)

The 7th generation module adopted a thick copper-ceramic-copper baseplate without using solder between insulation part and
baseplate which was necessary in conventional products. In addition, the ultrasonically (US) bonded terminal electrode is used
as the main electrode instead of the conventional aluminum wire connection, and in some packages, the parallel plate structure
is adopted.
・ Compact, lightweight package

By adopting a single substrate structure and a US bonding technology, we have expanded the chip mounting area and improved
the rated current in the same package. The 600A/1200V product, is replaced with a 20% smaller package size and the weight
is reduced by 55% compared to the 6th generation.
・ PC-TIM applicable (option)

It is possible to eliminate grease application step by pre-application of PC-TIM (Phase Change Thermal Interface Material) to
the back side of the product. For details, refer to the application note of PC-TIM.
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1.3. Structure (Parts and M aterials )
NX type
The structure diagram of CM150RX-13T is shown as a representative example.
⑧Main terminal ④Wire ⑥Encapsulation ⑨Control terminal

①IGBT chip ②Diode chip
⑤Case ③Common substrate ⑦Adhesive
※ This figure shows the structural diagram of a typical example for the material explanation. It does not indicate the exact
package size and chip size layout. There are also parts that are not in use in some packages.
Flame
Parts Material
Retardance
1 IGBT chip Silicon
2 Diode chip Silicon
3 Common substrate Insulating part: Resin UL 94V-0
(Insulating Metal Baseplate) Baseplate: Copper
4 Wire Aluminum
5 Case PPS UL 94V-0
6 Encapsulation Epoxy resin UL 94V-0
7 Adhesive Epoxy resin
Main material: Copper (Cu)
8 Main terminal
Plating: Nickel (Ni)
9 Control terminal
Plating: Tin (Sn), Base Plating: Nickel(Ni)
- Bushing (Heatsink mounting part) Steel
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std type
The structure diagram of CM 300DY-13T is shown as a representative example.
⑨ Main terminal ⑥Lid ⑩Control terminal

⑫Tapping screw ①IGBT chip ②Diode chip ⑦Encapsulation
④Wire
⑤Case
⑧Adhesive ⑪Bushing
③Common substrate
※ This figure shows the structure diagram of a representative for the material description. It does not indicate the exact package
size and chip size layout. There is also parts that are not in use in some packages.
Parts Material Flame Retardance

1 IGBT chip Silicon
2 Diode chip Silicon
3 Common substrate Insulating part: Si3N4
(Thick Metal Substrate) Base: Copper
4 Wire Aluminum
5 Case PPS UL 94V-0
6 Lid PPS UL 94V-0
7 Encapsulation Silicone gel
8 Adhesive Silicone
9 Main terminal
Plating: Nickel(Ni)
10 Control terminal
Plating: Nickel(Ni)
11 Bushing Steel
12 Self-tapping screws Steel
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2. Glossary
2.1. Common
Item Description
IGBT Insulated Gate Bipolar Transistor Insulated gate bipolar transistor
FWD Free Wheeling Diode Free wheel (flywheel) diode
IPM Intelligent Power Module Intelligent power module
Pause (no signal) time provided in the ON signal between
tdead Dead time
the upper and lower arm transistors
PC Optocoupler Optocoupler
The maximum rise rate of the input-to-output common-mode
CMR Common Mode Rejection
voltage of the optocoupler
The maximum rise rate of common-mode voltage between
CMH
input and output that the preset high level can be maintained
The maximum rise rate of common-mode voltage between
CML
input and output that the preset low level can be maintained
The ratio of output current to input LED current of the
CTR Current Transfer Ratio
optocoupler
One of the safety standards in the United States. American
Insurer Safety Test Laboratory certified.
UL Underwriters Laboratories
UL certified products of Mitsubishi power module conform to
UL 1557.
Regulations prohibiting the use of four heavy metals and two

Restriction of Hazardous Substances
types of brominated flame retardants in electrical products.
(Original) DIRECTIVE 2002/95 / EC OF THE
RoHS "The basic concept is to make the use of heavy metals of
EUROPEAN PARLIAMENT AND OF THE
Directive lead, mercury, cadmium, hexavalent chromium and new
COUNCIL of 27 January 2003 on the restriction
bromide flame retardants PBB and PBDE to new products of
of the use of certain hazardous substances in
electrical equipment as a rule not to contain by July 1, 2006."
electrical and electronic equipment.
WEEE: waste electrical and electronic equipment
High thermal conductivity grease. Solid phase at normal

PC-TIM Phase Change - Thermal Interface Material
temperature and softening with temperature rise
A specially prepared resin material with enhanced coefficient
DP resin Direct Potting Resin
of thermal expansion and adhesion
US bonding Ultrasonic Bonding Ultrasonic bonding
A system that completes assembly by inserting the press-fit
PressFit terminal into the through hole of the printed circuit board and
eliminates the need for soldering
A P layer is partially added on the cathode side, a hole is
injected at the time of recovery, and the recovery waveform
RFC Diode Relaxed Field of Cathode Diode
is made soft so that the transient voltage rise can be
suppressed by the diode
CSTBT™ Our proprietary IGBT utilizing carrier accumulation effect
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2.2. Maximum ratings
Symbol Item Definition or description
Collector-emitter Maximum voltage that can be applied for a short time between the collector and the emitter
VCES
voltage with the gate and emitter short circuited.
Maximum voltage that can be applied for a short time between the gate and emitter with the
VGES Gate-emitter voltage
collector-emitter short circuited.
Maximum repetitive
reverse voltage Maximum voltage that can be applied for a short time between the anode and cathode of the
VRRM
(Between anode and clamping diode.
cathode)
VCC Power-supply voltage DC supply voltage that can be applied between the collector and the emitter.
Maximum current that can flow continuously from the collector to the emitter within the rated
IC Collector current
junction temperature range.
Collector current Maximum current that can be repeatedly flowed from the collector to the emitter in a short
ICRM
(Maximum) time within the rated junction temperature range. Normally it is twice the IC.
Maximum current that can flow continuously from emitter to the collector (freewheel diode)
IE Emitter current
within the rated junction temperature range.
Emitter current Maximum current that can be repeatedly flowed from the emitter to the collector (freewheel
IERM
(Maximum) diode) in a short time within the rated junction temperature range. Normally it is twice the IE.
Maximum current that can flow continuously from the anode of the clamp diode to the cathode
IF Forward current
within the rated junction temperature range.
(Maximum) forward Maximum current that can be repeatedly flowed from the anode of the clamp diode to the
IFRM
current cathode in a short time within the rated junction temperature range. Normally it is twice the IF.
Ptot Collector loss The maximum allowable power loss of the IGBT at the specified case temperature.
Maximum allowable temperature and minimum allowable temperature in the ambient
Tstg Storage temperature
temperature range when storing without applying power.
The maximum voltage that can be applied between the terminal and the base plate in a state
Insulation withstand
Visol where the main terminal and the control terminal are collectively short-circuited. It is usually
voltage
expressed as an effective value.
Mt Tightening torque Tightening torque range of terminal screws.
Ms Tightening torque Tightening torque range of the mounting screws.
Continuous operating
Tvjop Allowable temperature range of chip in continuous operation.
junction temperature
Maximum junction The maximum temperature that the chip can tolerate in instantaneous operation such as
Tvjmax
temperature overload.
2.3. Temperature ra tings

When self-cooling or air cooling, the air temperature of a point which is not influenced by
Ta Ambient temperature
the heating element.
Tc Case temperature Temperature at a defined point on the enclosure (base plate) of the device.
Ts Heat sink temperature Temperature at a defined point on the heat sink.
2.4. Thermal ratings and characte ris tics

A value that indicates how many degrees K per unit electric power the junction temperature will
Rth Thermal resistance rise over the externally specified point when the heat flow due to the power consumption of the
junction is in equilibrium.
Rth(j-c) Thermal resistance Thermal resistance from junction (chip) to the case (base plate) surface.
Contact thermal Thermal resistance from the surface of the case (base plate) to the surface of the heat sink.
Rth(c-s)
resistance Normally, it is the value when thermal conductive grease is applied.
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2.5. Electrica l charac teristics
The leakage current which flows upon application of a specified voltage between the
ICES Collector-emitter cutoff current
collector and emitter while short-circuiting the gate and emitter.
The leakage current which flows upon application of a specified voltage between the
IGES Gate-emitter leakage current
gate and emitter while short-circuiting the collector and emitter.
Under specified conditions, the gate-emitter voltage required to supply the specified
VGE(th) Gate – emitter threshold voltage
collector current.
Collector – emitter Collector-emitter voltage when specified collector current is supplied under specified
VCEsat
saturation voltage conditions.
Capacitance inside the device as seen from between the gate and emitter terminals,
Cies Input capacitance under the prescribed conditions, in a state where the collector and the emitter are
short-circuited in an AC manner.
Capacitance inside the device as seen from the collector-emitter terminal, under the
Coes Output capacitance prescribed conditions, in a state where the gate and the emitter are short-circuited
in an AC manner.
Capacitance inside the device as seen from between the collector and gate
Cres Feedback capacitance terminals, under the specified conditions, in a state where the collector and the
emitter are short-circuited in an AC manner.
During turn-on, the time from 0% of the gate voltage until the collector current rises
td(on) Turn-on delay time
to 10% of the final value.
During turn-on, the time until the collector current rises from 10% of the final value
tr Rise time
to 90%.
During turn-off, the time from 90% of the gate voltage until the collector current falls
td(off) Turn-off delay time
to 90% of the initial value.
At turn-off, the time from when the initial collector current drops to 90% until the time
tf Fall time
when it drops to 10%.
Time during which the reverse recovery current flows, at specified conditions, when
trr Reverse recovery time the current of the built-in freewheeling diode is switched from the forward direction
to the reverse direction.
The charge accumulated in the internal elements, at specified conditions, when the
current of the built-in freewheeling diode is switched from the forward direction to
Qrr Reverse recovery charge
the reverse direction. Time integral of the reverse recovery current that flows in the
reverse direction.
Voltage drop when a specified current is passed through the built-in free wheel
VEC Emitter to collector voltage
diode.
The allowable range of the gate resistance connected between the element and the
RG External gate resistance
drive circuit.
The time integral value of the product of the collector current and the collector-
Turn-on energy
Eon emitter voltage from the moment the collector current rises to 10% of the final value
(Turn-on loss)
at the turn-on until the collector-emitter voltage drops to 10% of the initial value.
The time integral value of the product of the collector current and the collector-
Turn-off energy
Eoff emitter voltage from the moment when the collector-emitter voltage rises to 10% of
(Turn-off loss)
the final value at the turn-off until the collector current drops to 2% of the initial value.
The time integral value of the reverse recovery current and the emitter-collector
Reverse recovery energy voltage, at turn-on, from the point when the forward current of the diode reaches 0A
Err
(Reverse recovery loss) until the point where the reverse recovery current reaches the peak current until 0A
is reached.
※ The symbols and definitions are subject to change due to
revision of the reference standard (IEC, JEC).
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3. Product label information
3.1. Configuration of the part number
Module type
CM: IGBT module
Collector current rating

Example: 300: Ic = 300A
Connection Refer to the table below.

Example: C1, D, T, R
Package Outline and other changes

Example: A, B, L, U, Y
Withstand voltage class (See table below)

13, 24, 34
Series name
T
CM 300 DY -24 T
S6DAA1G
Lot number
Withstand voltage class (50 times the number rated VCES)

Withstand
VCES (V)
voltage class
13 650
24 1200
34 1700
Connection (There is no display on the label)

D: 2 elements T: 6 elements R: 7 elements C1: 2 elements
(collector common)
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3.2. Labeling
1 Label printing example
- This product complies with the RoHS Directive (2011/65/EU).

- Restriction of the use of certain hazordous substance in electrical and eltronic equipment.
2 Lot number configuration
S 6 D A A 1 G
| | | | └── RoHS directive compliant identification mark
| | | └────── Production management number
| | └────────── Production month: 1 to 9; January to September
| | O;October, N; 11 months, D; 12 months
| └──────────── Production year: Single-digit of the year end
└────────────── Factory symbol (UL factory identification mark)
3 Module Nomenclature (example for 2 elements)
Main
terminal
Case
Gate / emitter
Auxiliary (signal) terminal
Label (nameplate)
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3.3. Two-dimensional ba rcode configura tion
Two-dimensional code specifications
specification
Item Specification
Code type Data Matrix (ECC200)
Data type Alphanumeric characters
Error correction 20 to 35%
bilit
Symbol size 6.0 mm × 6.0 mm
Code size 24 cell × 24 cell
Cell size 0.25 mm
Data capacity 32/35-digit
Data Example 1
Item Characters
t
Model 1-20
space 21-22
Lot number 23-30
space 31-32
- -
- -
total 32
Data Example 1
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
CM4 5 0 D X - 2 4 T SP SP SP SP SP SP SP SP SP SP SP N 1 2 H A 1 G SP SP SP
"SP" represents a space (blank = equivalent to ASCII code number 32).
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4. Line up (List of available parts)
7th -generation T Series NX type

Type name Number
VCES PKG size Dual Module, CM300DX-24T, 152x62mm
of
(V) Solder pin PressFIT (Unit: mm)
elements
CM300DX-13T CM300DXP-13T
CM450DX-13T CM450DXP-13T 2 152 × 62
CM100TX-13T CM100TXP-13T
650
CM150TX-13T CM150TXP-13T 6 122 × 62
CM150RX-13T CM150RXP-13T
7 137 × 77.1
CM225DX-24T CM225DXP-24T Dual Module, CM1000DX-24T, 137x110mm
152 × 62
CM450DX-24T CM450DXP-24T 2
CM1000DX-24T CM1000DXP-24T 137 × 110
1200
CM150TX-24T CM150TXP-24T 6 122 × 62
7 137 × 77.1
6-pack, CM100TX-24T, 122x62mm
7-pack, CM100RX-24T, 137x77.1mm
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7th -generation T series std type
Number Dual Module, CM100DY-24T, 94x34mm
PKG size
VCES (V) Type name of
(Unit: mm)
elements
CM100DY-13T
CM150DY-13T 94 × 34
CM200DY-13T
650
CM300DY-13T
94 × 48
CM400DY-13T
CM600DY-13T 108 × 62
CM100DY-24T
2 94 × 34
CM150DY-24T
CM200DY-24T
94 × 48
CM300DY-24T Dual Module, CM200DY-24T, 94x48mm
1200
CM450DY-24T
CM600DY-24T
108 × 62
CM450C1Y-24T
CM600C1Y-24T
Dual Module, CM450DY-24T, 108x62mm
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5. Application
5.1. Example of application to a general-purp ose in verter
System Block Diagram
a.AC220V power
Applicable Inverter
Motor Rating IGBT Module
(kW) NX Type std Type
11 CM100TX-13T CM100DY-13T x3
15 CM150TX-13T CM150DY-13T x3
18.5 CM150TX-13T CM150DY-13T x3
22 CM200TX-13T CM200DY-13T x3
30 CM200TX-13T CM200DY-13T x3
37 CM300DX-13T x3 CM300DY-13T x3
45 CM450DX-13T x3 CM400DY-13T x3
55 CM450DX-13T x3 CM400DY-13T x3
75 CM600DX-13T x3 CM600DY-13T x3
※The NX type, 7in1 type (RX) with a built-in Brake element is also available in some current ratings.
※The NX type, press-fit pin type (-P) is also available in all of the current ratings.
b.AC440V power
Applicable Inverter
15 CM100TX-24T CM100DY-24T x3
18.5 CM100TX-24T CM100DY-24T x3
22 CM100TX-24T CM100DY-24T x3
30 CM150TX-24T CM150DY-24T x3
37 CM200TX-24T
CM200DY-24T x3
CM225DX-24T x3
45 CM200TX-24T
CM200DY-24T x3
CM225DX-24T x3
55 CM300DX-24T x3 CM300DY-24T x3
75 CM300DX-24T x3 CM300DY-24T x3
90 CM450DX-24T x3 CM450DY-24T x3
110 CM450DX-24T x3 CM450DY-24T x3
132 CM600DX-24T x3 CM600DY-24T x3
160 CM1000DX-24T x3 -
※The NX type, 7in1 type (RX) with a built-in Brake element is also available in some current ratings.
※※The NX type, press-fit pin type (-P) is also available in all of the current ratings.
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5.2. Example of application to a general-purp ose servo amp lifier
a. AC220V power
Applicable Inverter
3 CM100TX-13T CM100DY-13T x3
5 CM150TX-13T CM150DY-13T x3
7.5 CM200TX-13T CM200DY-13T x3
11 CM300DX-13T x3 CM300DY-13T x3
15 CM450DX-13T x3 CM400DY-13T x3
22 CM600DX-13T x3 CM600DY-13T x3
※For NX type, 7in1 type (RX) with a built-in Brake element is also available in some current ratings.
※※For NX type, press-fit pin type (-P) is also available in all of the current ratings.
b. AC440V power
Applicable Inverter
5 CM100TX-24T CM100DY-24T x3
7.5 CM100TX-24T CM100DY-24T x3
11 CM150TX-24T CM150DY-24T x3
15 CM200TX-24T
CM200DY-24T x3
CM225DX-24T x3
22 CM300DX-24T x3 CM300DY-24T x3
30 CM450DX-24T x3 CM450DY-24T x3
37 CM450DX-24T x3 CM450DY-24T x3
45 CM600DX-24T x3 CM600DY-24T x3
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5.3. Example of application to PV / UPS
a.650V elements
Applicable Inverter
Capacity IGBT Module
3.3 CM100TX-13T CM100DY-13T x3
5.5 CM100TX-13T CM100DY-13T x3
10 CM150TX-13T CM150DY-13T x3
20 CM200TX-13T CM200DY-13T x3
30 CM300DX-13T x3 CM300DY-13T x3
50 CM450DX-13T x3 CM400DY-13T x3
100 CM600DX-13T x3 CM600DY-13T x3
b.1200V elements
Applicable Inverter
Capacity IGBT Module
5.5 CM100TX-24T CM100DY-24T x3
10 CM100TX-24T CM100DY-24T x3
20 CM100TX-24T CM100DY-24T x3
30 CM150TX-24T CM150DY-24T x3
50 CM300DX-24T x3 CM300DY-24T x3
100 CM600DX-24T x3 CM600DY-24T x3
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6. Safety standard (UL Standard)
Mitsubishi Power Modules are UL certified (Recognized) for UL Standard 1557 and Category Code QQQX2.
(Except for some special items, File No. E 323585)
Power modules are not certified for other safety standards (TUV, VDE, CSA etc).
(Reinforcement of CE marking is not made considering correspondence to insulation.)
Regarding European CE and China CCC, as of October 2016, the target regulation as a power module has not been
confirmed. The authentication by part number can be checked on UL's website. Please refer to the following procedure.
1. Visit the UL website (https://www.ul.com) and click on “Online Certifications Directory” or type the following address
into your browser:
http://database.ul.com/cgi-bin/XYV/template/LISEXT/1FRAME/index.htm
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2. Enter the file number "E323585" in the UL File Number field displayed on the search screen and click the SEARCH
button.
Enter "E323585" in this column.
After input, click the SEARCH button.
3. The following search results screen will be displayed, click "QQQX2.E323585" in the Link to File field to see a list of certified
items. (See next page).
Click this link.
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4. Example of certified part numbers (part of the search results)
※ There may be no result of the part number even if the product is certified due to the procedure used to list the part
numbers. If you cannot find the part number, please contact the semiconductor sales department of your local Mitsubishi
Electric branch.
※ Currently, we do not offer it as a yellow card.
※ When using Internet Explorer as the browser, please set the encoding to Western Europe (ISO).
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7. Handling Precautions
Elements of a power module may be damaged depending on usage conditions (electrical / mechanical stress, handling,
etc.). In order to use our power module safely, observe the following precautions and use correctly.
7.1. Handling Precautions
Caution
Transportation • During transportation, please keep the shipping box in the correct orientation. If it is inverted or excessive
method force is applied, the terminals may be deformed or the resin case may be broken.
• Throwing or dropping may cause the device to break.
• Care should be taken when transporting during rainfall or snowfall to not expose the device to water. Do
not use the device if it is exposed to water as it may malfunction at the time of use.
Storage method • The temperature and humidity of the storage location is desirably within the normal temperature and
humidity range of 5 - 35°C and 45 - 75%. If stored in a more extreme environment than this temperature
and humidity, the performance and reliability of the device may decrease.
Long-term • When storing the product for a long term (over 1 year), please take measures for dehumidification. In
storage addition, please confirm that there is no scratch, dirt, rust etc. on the device when using after long term
storage.
Usage • Use in environments where high humidity (including condensation), organic solvents directly adhere, where
environment corrosive gas is generated, or in places where explosive gas, dust, salt, etc. are present may cause
serious accidents. Please avoid usages in these environments.
Flame retardance • For the epoxy filled resin and case material, UL standard 94V-0 certified products are used. It is not
incombustible, so please use caution.
Countermeasure · Please observe the following items in order to prevent damage due to static electricity.
against static (1) Precautions to prevent static electricity destruction
electricity If static electricity charged on the human body and packing materials becomes an excessive voltage
(±20V or more) and is applied between the gate and the emitter, the device may be damaged. The
basic principle of static electricity countermeasure is to minimize the generation of static electricity and
to avoid application of the voltage to the device.
* Do not use containers that are susceptible to static electricity for transportation and storage.
* It is recommended to short-circuit the gate and emitter with carbon cloth/foam etc. until just before
using the module. Also, please wear gloves so as not to touch the terminals with bare hands.
Avoid gloves and work clothes that are easy to charge, such as nylon.
* During assembly, ground the equipment to be used and the person performing work. It is also
recommended to ground a conductive mat on the surface of the work table and the floor around
the work table. Assembly refers to the point in time when the product is removed from the packing
box.
* Please note that when the gate-emitter is open on the printed circuit board on which the element is
mounted, it may be destroyed by the static electricity charged on the printed circuit board.
* When using a soldering iron, use a low voltage (12 V to 24 V) soldering iron for semiconductors,
Ground the tip.
(2) Open Gate-emitter Guidelines

* Do not apply voltage between the collector and the emitter while the gate and emitter are open.
* When removing the element, short the gate and emitter and remove it.
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Caution
Countermeasure (3) Interior shipping container
against static Conductive plastic is used for the interior box, so the
electricity
conductive foam used for short circuiting between gate
and emitter is not necessary. As with the conventional
conductive foam, this conductive plastic tray is not an
electrostatic component that completely shorts the gate
and emitter or clamps the overvoltage.
Please take adequate measures against static electricity
during the process of taking out the module out of the
packing box to mounting in the equipment, by using a
conductive mat grounded to earth with a band to the
operator. If you take out the module out of the interior box
and store it in another container etc, please implement
electrostatic measures such as using a conductive
container for the storage container. Built-in tray packing example (with lid open)
Also, since the module main body is not fixed to the
interior tray, please be careful about handling so as not to drop the module while taking out or unpacking
the interior tray.
Antistatic • When performing an acceptance test (saturation voltage test etc.) such as applying a voltage between the
measures gate and the emitter, Discharge between the gate and the emitter before returning to the packing tray or
storage (conductive) container after the test is completed. Please discharge the electric charge with a
high resistance (about 10 kΩ).
Connection · When mounting the module in the product, do not apply excessive stress to the screw terminal (structure).
Method The terminal structure itself and the joint of the terminal structure case may be damaged.
· When connecting to the module pins by using printed circuit board etc, please be careful not to deform with
excessive stress.
· When fixing the printed circuit board to the module case with tapping screws, please pay attention to the
size of the screws and mounting method. If you mistake the screw size and installation method, the case
of the module may be damaged.
7.2. Flame Reta rdance
NX type
The case/encapsulation material PPS/resin and insulating substrate material used in the IGBT module have a flame
retardance complying with UL 94 V-0 and have self-extinguishing properties. If the module is cut off from the combustion
source, there is no danger of spreading fire. Other components such as the silicon chip, copper baseplate, etc. do not
have applicable UL flame retardance standards.
std type
Since the PPS used for the case and lid of the IGBT module has flame retardance conforming to UL 94 V-0 and has
self-extinguishing properties, there is no danger of spreading fire if the combustion source is cut off. Silicone gel is
flammable and does not comply with UL 94 V-0. Products with characteristics with a flash point of 340°C, an ignition
point of 450°C, and dielectric breakdown strength after curing of 10 kV/mm or more are used. Also, there is no self-
extinguishing property, so in case of fire, it is necessary to extinguish by using powder fire extinguisher, carbon dioxide
extinguishing agent, foam extinguishing agent etc.
Other components such a silicon chip, copper baseplate, etc. do not have applicable UL flame retardance standard.
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8. Precautions on Actual use
8.1. Method of attaching the module to the heat s ink
Caution
Mounting method When attaching the module to a heat sink or similar, if extreme tightening is performed, stress will be
applied to the insulating ceramic substrate or silicon chip inside the module, causing destruction or
deterioration of the element. An example of tightening sequence is shown in Figure 8-1.
2
1
2-point tightening module

Temporary tightening ① → ②, final tightening ② → ①
3
3
2
2
1 1
4
4
4-point tightening module

Temporary tightening ① → ② → ③ → ④, final tightening ④ → ③ → ② → ①
Figure 8-1. Mounting screw tightening order
* Temporary tightening torque should be set to 20 to 30% of maximum rating as a guideline

* Please use spring washer and flat washer.
We recommend installing screws with the spring washer + flat washer built-in.
Spring washer Flat washer
Figure 8-2. Example of Washer embedded screw (spring and flat washers)
・ In order to maximize heat dissipation, it is necessary to minimize the contact thermal resistance
by maximizing the contact area as much as possible.
・ The flatness of the heat sink should be -50 μm ~ +50 μm (for a length of 100 mm) on the module
mounting surface (see Fig. 8-3). Also, the surface roughness should be within 10 μm for a length
of 100 mm. Sufficient flatness must be provided on the surface of the heat sink. Excessive minus
(concave) warp will increase the contact thermal resistance Rth(c-s) and affect the heat dissipation
of the module. Excessive plus (convex) warpage may cause stress to be applied to the inside of
the module during installation, which may cause damage to the module.
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・ 7th generation IGBT modules are offered to optionally be pre-coated with PC-TIM (Phase Change
- Thermal Interface Material) on the baseplate. Since PC-TIM has high thermal conductivity (3.4
W/(m·K)) and it can be uniformly applied by printing, contact thermal resistance decreases
compared to grease and temperature rise can be reduced. For details on handling, please refer to
the "PC-TIM Application Note".
・ It is also possible to apply heat conductive grease (herein referred to as grease) to the contact
surface between the module and the heat sink. In this case, please apply so that it becomes
uniform with thickness of 50μm to 100μm.
・ If PC-TIM or grease is applied to the contact surface with the heat sink, it will also help prevent
corrosion of the contact parts. However, please use grease that does not deteriorate within the
operating temperature range and does not change over time.
・ Use a torque wrench for tightening and tighten to the required torque. If the tightening torque is
too large, there is a danger of breakage or deterioration of the element as well as the tightening
components.
Grease coated surface Power Module
＋
Baseplate edge
－
Flatness specified area of heat sink
Figure 8-3. Flatness of the heat sink
Required shape of the module mounting heatsink hole

The outermost diameter dimension of the threaded hole in Figure 8-4 (ΦA) as shown in Table 8-1 is recommended for securing the
axial force of the mounting screw (to prevent screw looseness) and preventing stress concentration on the case resin material.
Spring
Washer screw
Washer
Case
Bush
C0.5 heatsink
Enlargement
φA
Figure 8-4.Schimatic of module mounting heatsink hole
Table 8-1. Recommended maximum outer diameter dimension of heat sink side threaded hole φA
Mounting The recommended
PKG type
screw maximum φA [mm]
NX type M5 6
std type M6 7
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8.2. Pow er module imple mentation
Capacitor Connection
During switching, high voltage is induced in power circuit stray inductance by the high di/dt of the main current when the
stray inductance is large. This voltage can appear on the IGBT module and cause IGBT or diode destruction. In order to
avoid this problem, guidelines that should be followed in designing the circuit layout are:
① Reduce the L1 inductance by bringing the connection of the smoothing capacitor close to that of the module
and arranging the return connection in a laminated plate structure to cancel the magnetic field.
② Connect the snubber capacitor close to the module terminal in order to bypass the high frequency current and
absorb the surge voltage.
③ The smoothing capacitor itself should be of low impedance type.
④ Decrease the di/dt by slowing the switching speed of the element (increase the gate resistance, etc.).
It is a general measure to suppress the wiring inductance (L1) of the main circuit as much as possible by ① or ③, and
still suppress surge voltage using ② or ④ when the surge voltage is large. Regarding ②, if the wiring inductance (L1)
is large, the voltage oscillation may increase due to the resonance between C and L1. At that time, oscillation can be
suppressed by changing the value of C.
Figure 8-5. Power Module application circuit
L1: Inductance of the wiring connecting the smoothing capacitor and the IGBT module. Since it is a round-trip line, it is
necessary to use laminated conductors made of parallel flat metal plates sandwiching an insulator so that mutual
magnetic fields are canceled.
L2: Inductance of the snubber capacitor lead wire. If this inductance is large, it will not be an effective bypass.
L3: Inductance of the wiring connecting the load.
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Precautions for mounting/installation
Please install using hand tightening method when possible. When tightening with an electric screwdriver or similar, the
excess thermally conductive grease should be squeezed out by pushing the module against the heat sink, etc. before
tightening. Also, it is necessary to sufficiently lower the tightening speed or to apply a low viscosity grease. If tightening at high
speed with a high viscosity thermally conductive grease, the module may deform and be damaged.
Note)
In case of PC-TIM, softening starts at 45°C or higher after mounting on heat sink.
Please use mounting screws and washers that match the module mounting hole size. If screws with a size smaller than the
recommended screw size (with flat washer) are used, there is a possibility that a misalignment of the center line of the screw
occurs, a shearing force is applied to the flat washer, and the clamping force is not evenly applied to the module mounting
hole. This will cause loosening of the mounting screws. An attaching method that makes axial force uniform and that the head
end face of the screw can be held within the center line deviation so as to cover the whole mounting hole is ideal.
When using iron screws for module installation and screw terminal connection, the tightening torque is limited by the strength
of the resin case etc. of the module body. Please note that tightening with the standard tightening torque of the iron screw
specified in JIS etc. may cause damage to the case.
Note)
Please note the screw length. If screws longer than necessary are used, it may cause resin breakage at the terminal.
Please refer to the following dimensions and use the screw of the optimum length.
Terminal
Top of Resin
Nut Area
A
Terminal screw hole depth (Unit: mm, resin portion tolerance: ±0.3 mm)
VCES Terminal
Screw and size Model A B
(V) thickness
CM100DY-13T, CM150DY-13T, CM200DY-13T 0.8
650
Main CM300DY-13T, CM400DY-13T 1.0
M5 13.5 5.2
terminal CM100DY-24T, CM150DY-24T 0.8
1200
CM200DY-24T, CM300DY-24T 1.0
CM600DY-13T 14.8 6.3 1.0
650 CM300DX-13T, CM450DX-13T, CM600DX-13T
14.4 7 1.5
CM150RX-13T, CM200RX-13T
Main
M6 CM450DY-24T, CM600DY-24T
terminal 14.8 6.3 1.0
CM450C1Y-24T, CM600C1Y-24T
1200
CM225DX-24T, CM300DX-24T, CM450DX-24T
14.4 7 1.5
CM600DX-24T, CM100RX-24T, CM150RX-24T
※Dimensions A and B do not include floating of the terminal.
Effective depth calculation formula: The effective depth calculation formula is as follows.
Main terminal A - Tolerance = 13.5 - 0.3 = 13.2 mm
There are products with 2 terminals and 3 terminals as power terminals. Each external terminal is internally connected, but
be sure to use all terminals for external connection. With only 1 of the terminals connected, the current capacity will be
insufficient as the main terminal, and the temperature rise of the terminal may exceed the acceptable level of the product.
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8.3. Stand-off recommen ded use (NX type )
Recommended use conditions

Recommended conditions for tightening the standoff screws to attach the printed circuit board are described below.
7th generation recommended screws

Thread type Screw size Tightening torque Tightening Method
B1 tapping screw φ2.6x10 1. Manual method by hand (equivalent to
0.75N·m±10% electric driver 30 rpm)
B1 tapping screw φ2.6x12
○
R
PT Screw K25x8 0.55N·m±10%
2. Electric screwdriver 600 rpm or less
PT○
R Screw K25x10 0.75N·m±10%
DELTA PT○
R Screw K25x8 0.55N·m±10%
DELTA PT○
R Screw K25x10 0.75N·m±10%
※ PT® · DELTA PT® is a registered trademark of EJOT.
*1 The above conditions are tightening conditions when printed circuit board thickness t=1.6mm.
*2 When considering other screws or when changing tightening conditions, please separately evaluate and check the
acceptability.
*3 When using a high-speed tightening tool such as electric screwdriver, ensure it has performance that meets the
recommended conditions and is regularly calibrated for both rotation speed and torque.
*4 The standoff may only be used 1 time and is not recommended to be reused.
*5 The above conditions may differ depending on usage environment etc. Please be sure to determine the conditions after
actual evaluation.
Pin terminal
・7th generation terminal specification • Recommended soldering conditions

Item Specifications Soldering by solder immersion (flow soldering)
Terminal
Copper(Cu) Solder temperature Immersion time
Material
Tin(Sn) 260°C±5°C 10 seconds±1 second
Plating type
Base: Nickel(Ni)
Plating Sn 4~10μm
thickness Soldering with a soldering iron (manual soldering)
Ni 1~6μm
Tip temperature Heating time
360°C±10°C 5 seconds±1 second
Press-fit
In addition to the conventional solder pin type, the NX type has a lineup of press-fit pin type that eliminates the need for
soldering to the printed circuit board. (Model name: CM ** XP - ** T)
By inserting into the through hole at the prescribed pressure and speed, a metallic bond with the plating of the through hole part
is made, and soldering becomes unnecessary. Care must be taken of suitable printed circuit boards, installation equipment / jigs,
installation methods, etc.. For handling details please refer to the separate "Press Fit Application Note".
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8.4. Thermally conductive (heat diss ipating) grease application example
Method of applying the thermally conductive grease to the power module:
① Materials Required: Power module, thermally conductive grease, screen, electronic mass meter, gloves
What is called a thermal compound basically performs the same function as the thermally conductive grease. When using
a highly viscous compound, thoroughly stir before spreading so that it spreads over the entire baseplate.
② The relationship between the amount and the thickness of the thermally conductive grease to be applied is as follows:
amount of grease [g]
Thickness of thermally conductive grease= g
baseplate area of module �cm2 � × density of grease [ � 3 ]
cm
Our recommended thermal conductivity grease thickness is 50µm to 100µm.
Note, this thickness is the initial value at the time of coating, it changes depending on the flatness of the base plate
and heat sink after installation.
Calculate the amount of thermal conductive grease required for the power module. Calculation example:
Mounting area 97 mm × 58 mm, for case of G-747 made by Shin-Etsu Chemical Co., Ltd. for heat conductive grease
amount of grease [g]
50µm = g
56.26 �cm2 � × 2.65 [ � 3 ]
cm
∴ Thermally conductive grease amount ≒ 0.75 [g].
③ Measure the mass of the power module without grease applied.
④ Add the amount of thermally conductive grease calculated in ① to the base plate of the power module using an
electronic mass meter. There is no specific/required method for applying the grease.
⑤ Apply the added thermal conductive grease to the entire surface of the base plate so as to be uniform. There is no
particular limitation on the application method as long as the target thickness is nearly uniform over the entire surface
of the baseplate of the power module.
※ Please note that foreign matter or air bubbles are not mixed at the time of application.
When applying such as a roller, please note so that air bubbles are not mixed into the grease.
If you are using a metal spatula, please be careful not to scratch the base plate surface.
After the heat sink mounting, by not taking any thermally conductive grease protruding wipe, it may effect of
suppressing the aging of the thermally conductive grease of the contact surface is increased.
Please be careful not to contaminate with foreign matter and bubbles when applying the grease. When coating with a
roller etc., please be careful that bubbles do not get mixed in the grease. When using metal spatula, please be
careful not to scratch the baseplate surface. It is possible to reduce the aging effect of the thermally conductive
grease on the baseplate by not wiping off the excess grease after installing to the heatsink.
Example of using a squeegee and mesh screen (mask)

(Application example: Shin-Etsu Chemical Co., Ltd.)
Grease for aluminum conductor connections is mainly aimed at improving the contact properties of the aluminum
surface and lowering electrical contact resistance by preventing corrosion. Although there seems to be a long-term use
record, it is not intended to improve the heat conduction of the contact part, so it cannot be expected to make much
reduction in contact thermal resistance. If this grease is adopted, sufficient heat dissipation design/study is required.
The optimum thermal conductivity grease varies depending on the application and usage, so please contact directly to
the grease maker at the time of selection / specification.
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8.5. Concept of the rmal resistance
The module datasheet defines the thermal resistance Rth(j-c) between the chip junction and case (baseplate) and the
contact thermal resistance Rth(c-s) between case (baseplate) and heat sink. The reference point of thermal resistance
(case temperature) is just under the chip. Chip placement of each product is described in the data sheet. An example
of that is described below.
Tr** indicates the center position of the IGBT chip, Di** indicates the center position of the FWD chip. For 2 elements,
Tr1/Di1 indicates the upper arm and Tr2/Di2 indicates the lower arm.
Figure 8-6 Chip location (CM225DX-24T dual module) Figure 8-7 Chip location (CM200TX-24T 6-pack module)
Measure the base plate and heat sink temperature by attaching a thermocouple to the position (directly under the chip)
shown in the figure.
Notes
・ The thermal resistance of the heat sink will change depending on the material, area, and thickness used. Generally, with
heat sinks of the same material, the smaller the area and the thinner the heatsink, the higher the thermal resistance.
・ The contact thermal resistance Rth(c-s) shown in the data sheet is the typical value under noted application conditions of
thermal conductive grease. The thermal conductivity conditions of the grease for the Rth(c-s) values are 0.9W/(m・K) for
NX type and 3.0W/(m・K) for std type respectively. Actual contact thermal resistance varies depending on the type of
grease, the applied amount and the heat generation conditions, so confirm (measure) with the grease and heat sink
actually used and in actual operation conditions.
・ Water-cooled heat sink:

The general industrial power module is assumed to be used in a cooling system using a natural convection
heatsink or air cooling heat sink. If you using a water-cooled heat sink, thermal resistance Rth(j-c) and contact thermal
resistance Rth(c-s) may change significantly due to the nature of heat spreading. Further, if condensation occurs,
discharge may occur between the main electrodes. Destruction due to dew condensation is possible due to
overvoltage breakdown due to the surge voltage generated by the discharge. Since there is no dew condensation
countermeasure as part of the module, it is necessary to take dew condensation measures in the unit using the
module when it is used with water cooling. The sealing material (DP resin) filled in the module has moisture
permeability.
・ Package for general industrial power module is not airtight structure, so liquid can be absorbed by module. Both the
package materials and semiconductor chips are not designed assuming long-term contact with anything other than
the DP resin. Therefore, characteristics and reliability cannot be guaranteed when the module is immersed in
silicone oil or similar.
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8.6. Example of thermocouple attachment
Example of thermocouple attachment for case temperature measurement just under the chip are shown below.
●Case temperature measurement

Case temperature just under chip is used for estimation of junction temperature.
(Please see “10. Power loss and heat dissipation design” for the detail estimation procedure.)
Thermocouple attachment examples for NX type and std type are shown below.
NX type Chip Case

<Step 1>
Drill into the IGBT module as shown in Figure 8-8. Drilled groove
(The depth of the groove is 1mm, the width is 1mm as a guideline when （redline）
a thermocouple with a wire diameter of 0.3mm (recommended value) is 2mm
used.) 1mm
Please be careful that the base of the thermocouple tip (blue line) comes Baseplate Thermocouple
to the point you want to measure (just under the chip). Filler
Thermocouple tip
<Step 2> Heatsink
Insert a thermocouple into the groove drilled in Step 1, place it on the
module baseplate, and seal with a high thermal conductivity filler from
the top so that the thermocouple does not move Figure8-8. Thermocouple attachment on NX type baseplate
Figure 8-9 shows an example of groove drilling on the back of the

module. Please be careful not to impact the flatness of the module by
burrs and filling materials after the groove processing.
Measurement point
1mm
Thermocouple
Figure 8-9: Drilling Example (NX type module back)

std type
<Step 1>
Chip Case
Drill into the module as shown in Figure 8-8 (the depth of the groove is
0.4mm, the width is 0.3mm as a guideline when a thermocouple with a Drilled groove
wire diameter of 0.1mm (recommended value) is used. At this time, (red line)
please be careful that the base of the thermocouple tip comes to the 0.7mm
point you want to measure (just under the chip). 0.4mm
Baseplate Thermocouple
<Step 2> Filler
Insert a thermocouple into the groove drilled in Step 1, place it on the Thermocouple tip
module baseplate, and seal with a high thermal conductivity filler from Heatsink
the top so that the thermocouple does not move
Figure8-10. Thermocouple attachment on std type baseplate
Figure 8-11 shows an example of groove drilling on the back of the Measurement
module. Please be careful not to impact the flatness of the module by point
burrs and filling materials after the groove processing.
0.3mm
Thermocouple
Figure 8-11: Drilling Example (std type module back)
Note) For the junction temperature estimation, it is recommended to measure the case temperature with a cooling system actually
employed to your application. If heatsink temperature needed to be obtained, please refer the following example.
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●Heatsink temperature measurement (NX type and std type common)
<Step 1>
Drill into the heat sink as shown in Figure 8-12. Base of thermocouple tip
(The depth of the groove is 1mm, the width is 1mm as a guideline when a (just under the chip) Drilled groove
thermocouple with a wire diameter of 0.3mm (recommended value) is (red line)
used. Filler
Please be careful that the base of the thermocouple tip (blue line) comes
to the point you want to measure (just under the chip). 1mm
Thermocouple
<Step 2> Thermocouple
Insert a thermocouple into the groove drilled in Step 1, place it on the heat tip
Heatsink
sink, and seal it with a high thermal conductivity filler from the top so that
the thermocouple does not move. It is no problem even if the
thermocouple is caulked to the heat sink.
Figure8-12 Example of heatsink thermocouple mounting
Heatsink
Figure 8-13 shows an example of groove processing on a heat sink.
Be careful not to impact the flatness of the heat sink by burrs and filling
materials after the groove processing.
Measurement point
1mm
Thermocouple
Figure 8-13: Drilling Example (heatsink)
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8.7. Snubber circuit
Snubber circuit application example
A snubber circuit application example is shown in Figure 8-15. The following is reference design values of the snubber inductance
(L2) and the snubber capacitor (Cs) in the application circuit. A waveform example of collector-emitter voltage VCE in turn-off is shown
in Figure 8-16. Here the total inductance L is defined as 2xL1+2xL2.
VCE
Smoothing Snubber
Load
ΔV1
capacitance capacitance
ΔV2
Figure 8-15. Snubber circuit application example Figure 8-16. Waveform example of VCE in turn-off
In the circuit of Figure 8-15, at first, a surge voltage (ΔV1 = 2·L2 ·di/dt) is generated by di/dt due to turning off the IGBT and
wiring inductance (L2) of the snubber capacitor (Cs). In order to suppress ΔV1, it is necessary to reduce the snubber wiring
inductance L2. Reference design values for snubber inductance are shown in Figure 8-17. As for di/dt, a tangent line is drawn on
the current waveform of actual measured turn-off as a typical value. Since it may vary somewhat depending on the
characteristics, snubber circuit wiring inductance (2·L2) should be considered as a guideline and checked thoroughly by actual
evaluation.
Next, when L1 is sufficiently large, resonance occurs between L1 + L2 and the snubber capacitor (Cs), and its peak voltage ΔV2
appears. In order to suppress ΔV2, it is necessary to increase the value of snubber capacitor Cs. Reference design values for
snubber capacitance are shown in Figure 8-18. Cs is calculated by using the formula in the figure. IOFF assumes the current
flowing during short-circuit, and it is calculated as 5 times rated current.
100 120.00
Snubber wiring inductance 2xL2 (nH)
Snubber capacitance CS (uF)
90 Calculation condition: Calculation condition: L=100nH

80 ΔV1=150V 100.00 ΔV2=150V
70
60 80.00
50 L=50nH
60.00
40
30 L=30nH
40.00
20
L=20nH
10 20.00
0 L=10nH
0 200 400 600 800 1000 1200 0.00
Rated Collector current (A) 0 200 400 600 800 1000 1200
Rated collector current (A)
Figure 8-17. Snubber capacitance - Collector current dependence Figure 8-18. Snubber inductance - Collector current dependence
Calculation example of the snubber inductance (L2) Calculation example of Snubber Capacitance (Cs)
Rated collector Snubber inductance Rated collector Total inductance Snubber capacitance
current 2xL2 (nH) current L (nH) Cs (μF)
100A ＜ 89 nH 100A ＜ 100 nH ＞1.1
200 A ＜ 54 nH 200 A ＜ 50 nH ＞2.2
300 A ＜ 39 nH 300 A ＜ 30 nH ＞3.0
450 A ＜ 28 nH 450 A ＜ 20 nH ＞4.5
600A ＜ 22 nH 600A ＜ 15 nH ＞6.0
1000A ＜ 15 nH 1000A ＜ 10 nH ＞11.1
Conditions: ΔV1=150V Conditions: ΔV2=150V
Assumed di/dt in turn-off at rated collector current Assumed 5 times rated collector current
(Ic=rated, typ; @Tvj=25℃)
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In the case of module parallel connection, it is recommended to attach a snubber circuit to each module individually. In the
case of increasing snubber capacitance by paralleling snubbers, it is recommended to divide snubber circuit and attach
those circuits to multiple modules. It is considered better for the snubber wiring inductance (L2) reduction and the current
capacity of the snubber.
Measures to reduce surge voltage
① Reduction of circuit inductance (L1, L2)
●Reduction A (6 and 7 packs): printed circuit board with lamination
● 100 A to 1000A (dual modules): Parallel flat (laminated) bus plates
② Snubber circuits
● 50 to 200A (6 and 7 packs): snubber circuit (a) or (b)
●(a)0 to 600A (dual module): snubber circuit (a) for each phase or (b) for each
phase
● f00A or more: snubber circuit (a) and (c) for each phase
Table 8-2. Applicable snubber circuits
Module Applicable Snubber Circuit
NX type a, b, or a + b, Figure 8-19. Various snubber circuit examples

std type a, b, or c
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7th Generation T Series NX type / std type Application Note
Wiring example of the power module
Iｔ is suggested to layout by using two DC bus conductor plates (P layer, N layer) which are sandwiching an insulating layer.
The stacking order has no effect on wiring inductance. An example of how to connect this multilayer bus to the module is
shown below.
Layout example when a three-phase full-bridge is used as one unit
N layer
N layer
Insulating
Insulating layer
layer
P layer
P layer
Figure 8-20. Example of NX type (dual module) Figure 8-21. Example of std type (dual module)
Low inductance laminated bus bar Manufacturer example: Ryoden Kasei Co., Ltd.: "Laminated bus bar"
http://www.ryoka.co.jp/
For details, please contact directly to the manufacturer.
8.8. Other
In the IGBT module, the insulation distance is designed to UL 840 as a reference standard, but there is a risk that the
clearance might become insufficient at high altitude. Due to decreased air pressure, the withstand voltage for the same spatial
distance decreases and the insulation capability decreases in general.
Also, as the altitude increases, the cosmic radiation will increase rapidly. It is known that as more cosmic radiation hits a
semiconductor, the possibility of random failure increases. Please refer to application notes "About Isolation Voltage and LTDS".
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9. How to use the IGBT module
9.1. IGBT M odule Selection
(1) Voltage rating

The voltage rating of the IGBT module is determined by the input supply voltage of the applicable device or the bus voltage
applied between P and N of the module. Generally, Table 9-1 shows the input power supply voltage, bus voltage, and rating of
module.
Table 9-1. Application example of input power supply voltage and device rating
Voltage rating of the IGBT module
650V 1200V 1700V
Input supply voltage (AC) ~ 240Vrms ~ 480Vrms ~ 690Vrms
P-N bus voltage (DC) ~ 450V ~ 850V ~ 1200V
(2) Current rating

It is a current value that can flow as a DC current. For switching operation (pulse), up to twice the rated current can be
tolerated. However, in actual use, it is necessary to consider junction temperature, case temperature, life (lifetime of power
cycle, thermal cycle etc) etc.
9.2. Recommended driving conditions and d riving c ircuit
(1) Recommended driving conditions

The positive recommended gate voltage is +VGE = 15V±10%. If it is used under conditions above this recommended range,
short circuit energy will increase by increasing the short circuit current, so it is necessary to shorten the time to shut off. Also, if it
is lower than the recommended range, it is assumed that the operation will be in the active area, as shown in the output
characteristics of the 7th generation IGBT (CM600DX-24T example) in Figure 9-1. When used in this active area, caution is
necessary as there is a possibility of thermal destruction in a short time due to rapid temperature rise.
Conditions: Tvj= 25℃
1200
20V 13.5V
12V
15V
1000
Saturation region
800 11V
Active region
I C （A）
600
10V
400
9V
200
VGE=8V
0
0 1 2 3 4 5 6 7 8 9 10
VCE (V)
Figure 9-1. Output characteristics of the CM600DX-24T

Negative gate voltage is recommended -VGE=-15V due to dependence of reverse bias voltage and switching loss.
Apply a reverse bias voltage that does not allow false turn-on by external noise or dv/dt.
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(2) Drive circuit
Key points of gate drive circuit design of IGBT module are gate voltage, gate resistance and wiring.
The basic form of the gate circuit is shown in Figure 9-2.
Optocoupler + VG
RG
AMP
Electrical Isolation
-VG
Optocoupler
(High-speed, high CMR)

Pre-amp. + and - Gate
Bias applied Resistance
Figure 9-2. Basic form of the gate circuit

 Electrically isolate the IGBT module and the input signal by using an optocoupler. The optocoupler must be high speed with
high noise immunity (high CMR).
 Be sure to design the buffer circuit to apply the positive and negative bias so that the gate current can flow sufficiently.
 Reduce the wiring between the gate drive circuit and the IGBT module as much as possible. Avoid noise induced from main
circuit etc. by e.g. twisting a pair of the gate wiring and the emitter wiring. Do not bind up the gate wiring with the one for the
other phases.
 When the load is short-circuited, the gate-emitter voltage VGE rises and may break down due to the larger current flowing.
Therefore, it is recommended to suppress surges of the gate-emitter voltage. An example is shown below in Figure 9-3.
 If a voltage is applied to the main circuit before the control voltage supply becomes stable, the IGBT module may be
destroyed.
 In case a voltage is applied to the main circuit before the control voltage supply becomes stable, it is recommended to insert
a resistor between the gate and the emitter. (Resistance value example: several kΩ to several tens of kΩ)
 Some optocoupler is available in market which can drive IGBT directly. Please contact the optocoupler or drive circuit
manufacturer for the information.
Gate-emitter
voltage clamp
Figure 9-3. Gate-emitter voltage surge clamp example
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(3) Selection of gate resistance
As for the gate resistance RG, upper and lower limit values are listed as recommended values in the data sheet. The
recommended lower limit value is the gate resistance condition that regulates the electrical characteristic switching time of the
IGBT module, and is the minimum resistance value assuming actual use conditions. The recommended upper limit value is set
to approximately 10 times the recommended lower limit value. The gate resistance RG greatly affects switching time and
switching loss. Below is a graph of switching time vs. RG and switching loss vs. RG of CM600DX-24T.
Conditions: VCC=600V, VGE=±15V, IC=600A Conditions: VCC=600V, VGE=±15V, IC=600A

Tjv = 150℃, ----- Tjv = 125℃ Tjv = 150℃, ----- Tjv = 125℃
)
)
Switching loss(mJ)
Switching time (ns)
ns
t d (off)
mJ
t d (on)
tr
Switc hing ti me (
tf
Gate resistance RG (te Gate resistance RG (te

)
Figure 9-4. Switching time -RG Figure 9-5. Switching losses -RG
For RG, it is necessary to select the optimum value from characteristics such as switching time, switching loss, surge voltage
and so on. Since the surge voltage will change depending on the wiring inductance of the equipment and the snubber circuit etc.,
the optimum value varies depending on the user. In order to maximize performance, it is recommended to individually set the gate
resistance on turn-on side and turn-off side.
9.3. Gate drive pow er supply
A gate drive power supply that can supply sufficient gate current and drive power is necessary. Once the gate voltage and
gate resistance RG are determined, the gate current of the drive circuit and the required drive power are calculated as follows.
(1) Average current (When driven with VGE = ±15V, excluding consumption by drive circuit)
Average drive current (Typ) = QG (-15V (-15= Qdrivc
QG: gate charge amount (-15V = Qby
fc: Switching carrier frequency
Figure 9-6 shows the characteristics of the gate charge of the CM600DX-24T.
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20
15
10
VGE（V）
5
VOLTAGE
0
GATE-EMITTER
-5
-10
-15
Conditions：VCC=600V、IC=600A、Tvj=25℃
-20
-6000 -4000 -2000 0 2000 4000 6000 8000
GATE CHAGE QG （nC）
Figure 9-6. Gate voltage and Gate Charge
(2) Peak output current

(+𝑉𝑉𝐺𝐺𝐺𝐺 ) − (−𝑉𝑉𝐺𝐺𝐺𝐺 )
𝐼𝐼𝐺𝐺𝐺𝐺𝐺𝐺𝐺𝐺𝐺𝐺 =
𝑅𝑅𝐺𝐺 (𝑒𝑒𝑒𝑒𝑒𝑒𝑒𝑒𝑒𝑒𝑒𝑒𝑒𝑒𝑒𝑒) + 𝑟𝑟𝑔𝑔 (𝑚𝑚𝑚𝑚𝑚𝑚𝑚𝑚𝑚𝑚𝑚𝑚 𝑖𝑖𝑖𝑖𝑖𝑖𝑖𝑖𝑖𝑖𝑖𝑖𝑖𝑖𝑖𝑖)
Note) In actual practice, the peak current value may be smaller than the calculated value due to the delay of the drive circuit, the
inductance of the drive wiring, etc.
(3) Average drive power
1
=
T ∫ V • idt
1 1
= ( + VGE )
T1 ∫
idt + ( − VGE )
T2
idt ∫
= ( + VGE ) • QG • fc + ( − VGE ) • QG • fc
= (( + VGE ) + ( − VGE )) • QG • fc
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9.4. Dead time setting
In the inverter circuit etc., it is necessary to set the upper and lower arm dead time in the sequence of the drive signals in order to
prevent upper and lower arm short circuit.
Figure 9-7. Upper and lower arm dead time
The required dead time depends on the switching time when the upper and lower arms turn on and turn off. Therefore, the
required dead time will change depending on the gate resistance value. If the dead time is too short, upper and lower arms are
short-circuited in the same phase and short-circuit current flows, so there is a possibility of thermal destruction. After testing with
the actual unit, please set the dead time appropriately.
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9.5. Short Circu it Protec tion
The short-circuit SOA (safe operation area) is defined in the data sheet.
(1) Conditions for short-circuit SOA (Please refer to data sheet for safe operation area)
·650V withstand voltage devices

VCC≦400V, VGE=±15V, Tvj = 25 - 150℃, RG=recommended gate resistance value, short time tw≦8µs, non-repetitive
·1200V withstand voltage devices

VCC≦800V, VGE=E0V, VTvj = 25 - 150℃, RG=recommended gate resistance value, short time tw≦8µs, non-repetitive
The definition of short-circuit time tw is shown in Figures 9-8 and 9-9.

VGE ─+VGE
0V t
+VGE RG
0V VGE
VCE, ISC ─VCES
-VGE
VCC
VCC
+VGE RG
VCE
0V VGE
ISC
-VGE 0V
0A t
tw
Figure 9-8. Definition of the short-circuit time tw in the case of arm short circuit
VGE ─+VGE
0V t
－VGE L lead
VCE,ISC ─VCE
ISC(peak)─
VCC
+VGE RG
VCE
0V VGE
ISC
-VGE 0V
0A t
tw
Figure 9-9. Definition of the short-circuit time in the case of load short-circuit tw
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(2) Short-circuit protection method
As a method of simply detecting the occurrence of a short circuit without detecting the collector current, a method of detecting
the on-voltage (V) when the IGBT is on is often used. IGBT drivers etc. with built-in short circuit protection function are also on
the market. The short-circuit protection circuit built in the IGBT driver judges the short circuit condition when the gate output is on
and the collector potential of the IGBT is high, then shuts off the gate voltage. Since surge voltage (C-E) becomes high when
cutting off a large current quickly, we recommend a method to suppress the gate voltage softly to suppress the surge voltage (C-
E).
Figure 9-10. Example of short-circuit protection of IGBT driver
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9.6. Paralle l connection of IGBT modules
(1) Parallel Operation

The following sub-sections outline the basic requirements and considerations for parallel operation of 7th generation IGBT
module of dual switch configuration with ratings of 200A or more. 7th generation IGBT module lineups paralleling-specification
type which is specially designated for parallel use.
VCEsat-IC characteristics of the 7th generation IGBT modules signify a positive with temperature coefficient. This feature (positive
temperature coefficient) facilitates the reduction in the imbalance of the collector current between paralleled devices. When the
junction temperature of IGBT rises, the VCEsat increases and the collector current reduces accordingly.
VGE=15V
2.5
SATURATION VOLTAGE VCEsat (V)
COLLECTOR-EMITTER
1.5
0.5
Tvj=25°C
Tvj=125°C
0
0 100 200 300 400 500 600
COLLECTOR CURRENT IC (A)
Figure 9-11. VCEsat characteristics of CM300DX-24T
When two 7th generation IGBT modules with parallel specification are paralleled, the ratio of the maximum static current
imbalance will be restricted to ±15% for both 650V and 1200V class. Using modules from the same lot number in parallel is
recommended since a smaller deviation in the VCEsat results in a smaller ratio of the static current imbalance between two modules.
(Please inquire of your sales contact the detail of the parallel specification)
As the number of modules connected in parallel increases, there is a possibility for any one single module to experience a high
collector current. When modules are paralleled, calculate the derating current with formula shown below:
1−x
(n − 1) × +1 Where n: number of paralleled modules
�1 − 1+x � × 100%
n x: ratio of static current imbalance
Matching VCEsat is effective for maintaining good static steady state current balance. Gate drive conditions and power circuit
layout have the greatest impact on dynamic current balance between paralleled devices. The IGBT modules should be
connected with a short and symmetric connection with low impedance to the application circuit in order to minimize the current
imbalance.
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Layout of main circuit
● Circuit connections should be low inductance and laid out symmetrically for balanced inductance.
Difference in the circuit inductance between each device may result in current imbalance.
Asymmetrically high power loss may occur on one particular device and cause thermal destruction. (Figure 9-12)
● Use snubber circuit for each module individually and reduce circuit inductance in order to minimize surge voltage.
<Example of Imbalanced current> <Example of balanced current>

Collector current through each device has a large Collector current flows symmetrically due to balanced
deviation due to an imbalance in the circuit inductance circuit inductance between devices
between devices.
IC1=IC2 C
IC1<IC2
IC1 IC2 IC1 Ls IC2
Ls
C
Ls1 Ls1
Ls1 Ls1
RG RG RG RG
G G
Es Es
Ls1 Ls1
Ls1 Ls1
Ls
E
Ls
E
Figure 9-12. Current imbalance caused by an asymmetric main circuit inductance
Gate Drive Circuit

● Uniform impedance of each gate drive circuit. In case the difference in the impedance consisting of gate resistance and
stray inductance is high, current imbalance may occur.
● Use short and tightly-twisted wires of equal length.
● Gate resistance should not be too high.
● Avoid running the wiring of drive circuit in parallel to main circuit.
● Use gate resistor for each device individually to prevent gate oscillation. (Figure 9-13)
● Insert a low value resistance (e.g. 0.1Ω) or ferrite core in the emitter wiring of the gate drivers in case an inductive current
flows in the loop of the main emitter wiring and the gate driver wiring. This loop current may cause a difference in the switching
speeds between paralleled devices by influencing the instantaneous gate voltage. (Figure 9-14)
<CMH-11733> 46
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<IGBT module>
<Example of Imbalanced current> <Example of Current balance>

Only a single gate resistor is employed to connect the Use gate resistors for each device individually to
gates of the paralleled devices. prevent gate oscillations
C C C C
RG RG RG
G G
Es Es
E E E E
Figure 9-13. Measures to limit gate oscillation
<Example of Imbalanced current> <Example of Current balance>

Inductive current flows through the drive circuit via Insert resistors (Rs =0.1ohm) or ferrite core in emitter
emitter connection due to a difference in the value of wiring of the gate drive circuit to limit the inductive
the inductances Ls1 and Ls2. current flow.
C C C C
RG RG RG RG
G G
Es Es RS
Ls1 RS Ls Ls
Ls2
E E
Figure 9-14. Measures to limit inductive current in emitter wiring
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10. Power loss and heat dissipation design
10.1. How to calcula te the pow er loss
Loss calculation of the power module
In order to use the power module safely, it is necessary to calculate the power loss and the junction temperature under the
conditions to be used, and to use the module within the absolute ratings. When selecting a power module, you can download
and use simulation software from our website.
Download site: http://www.mitsubishielectric.com/semiconductors/simulator/index.html
Please click "Register" on the page, and after entering the necessary information, the download page will be displayed.
*: Supported OS is Windows® 98SE or later only.
For the usage of the software, please download the manual “POWER LOSS SIMULATION Ver. * User’s Manual”
Power loss and junction temperature

It is very important to understand the junction temperature when using the IGBT module. How to obtain the junction
temperature is explained by taking the waveform of Figure 10-1 as an example. The calculation of the IGBT part is shown below
as an example, but the calculation method of the diode part is basically the same. Regarding the temperature rise, please be
careful not only to the maximum rating, but also to the power cycle lifetime due to temperature swing.
Figure 10-1. Determination of the junction temperature
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<IGBT module>
Power loss
To determine the junction temperature, the user will need to know the losses of the IGBT module. The loss per pulse should
be first determined. The loss of one pulse is considered divided into steady-state and switching losses.
(1) Steady-state loss
Using a graph of VCEsat vs. IC characteristics, calculate the energy (J).

IC1 × VCEsat1 + IC 2 × VCEsat 2
E ( sat ) = × tw1
2
Note) The above expression is simplified. Originally described as:
tw '
E ( sat ) = ∫ IC (t ) • VCE (t )dt
0
In this case, data of Tvj = 150℃ is used for the graph of VCEsat vs. IC.
(2) Switching losses Figure 10-2. Steady-state Loss and Switching Loss
The switching loss is obtained from the actual waveform by the piecewise quadrature.
tb
1 n
Eon / Eoff = ∫ IC (t ) • VCE (t )dt = ∑ Pn × (tb − ta)
n n −1
n: number of divisions (Equally divide the section of ta - tb, averaging
ta the power loss for each point)
by summing (1) and (2), the loss of the IGBT E1 per pulse is:
E1 = Esat + Eon + Eoff
Also, the loss of the FWD section is calculated similarly to the IGBT section.
tb
1 n
Err = ∫ IE (t ) • VEC (t )dt = ∑ Pn × (tb − ta)
n n −1
ta
Refer to the integration range of switching loss as follows
IE
vEC
vCE IC IC VCC
VCE
VCC VCC
0A t
0.1×IC 0.1×VCC 0.1×VCC 0.02×IC

0 t 0 t 0V t
ta tb ta tb ta tb
Turn-on Turn-off Recovery
Figure 10-3. Integration range of switching loss
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(3) Calculate the average power loss.
The average power loss in one pulse is
E1
P1 = （W）
tw1
If the waveform in Figure 10-1 is approximated as a rectangular wave with respect to power, it is represented as shown in
Figure 10-4.
Figure 10-4. Concept of Average Power Loss 1
Calculate the average power loss in the period tw2. (See Figure 10-5)
E1
Pav = × N (W) N: number of pulses within the tw2 period
tw 2
Calculate the overall average power loss. (See Figure 10-6)
tw 2
PAV = Pav × (W)
T2
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10.2. Calculation of temp erature rise
Calculate the junction temperature using P1, Pav, PAV obtained above.
(1) tw1 << 1ms
In the approximation in Figure 10-5, the junction temperature is highest when the case temperature (or heat sink temperature)
reaches steady state and the time when tw2 expires. (See Figure. 10-7)
Maximum rise point of Tvj
Figure 10-7. Concept of the junction temperature 1
Maximum rise point of Tvj
Figure 10-8. Concept of junction temperature 2
Assuming that the temperature difference between the junction and case is ΔT(j-c)
Δ T ( j - c ) ＝R t h ( j - c ) ×jAV－Z t h ( j - c ) @t w 2 ×2AV＋Z t h ( j - c ) @t w 2 ×Pav＝R t h ( j - c ) ×jAV＋（Pav－PAV）×Z t h ( j - c ) @t w 2
Rth( j- c) ……chermal resistance between junction and case
Z t h ( j - c ) @t w 2 ……Transient thermal impedance at the time of tw2 between junction and case
Using the above calculated ΔT(j-c), the junction temperature can be calculated as
T v j ＝Tc＋ΔT ( j - c ) (Here Tc is measurement value at the position of just under chip by e.g. thermocouple)
Also, in order to keep the Tvj lower than the maximum rating Tvjmax= 175ºC, the allowable case temperature rise can be
calculated as:
TC(max) = 175 -Δ T ( j - c ) .
Please also note that the case temperature TC should not exceed its maximum rating TCmax.
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(2) Overload from steady-state operation
In this case, ripple due to POL must also be taken into consideration. As in the case of (1), perform a square wave
approximation as shown in Fig. 10-9.
Overload Maximum rise point

Steady state operation of Tvj
operation
Figure 10-9. Concept of the junction temperature 3
ΔT ( j - c ) ＝R t h ( j - c ) ×jAV－Z t h ( j - c ) @t w 2 ×2AV＋Z t h ( j - c ) @t w 2 ×Pav－Z t h ( j - c ) @t w 3 ×Pav＋Z t h ( j - c ) @t w 3 ×3OL
＝R t h ( j - c ) ×jAV＋（Pav－PAV）×Z t h ( j - c ) @t w 2 ＋（POL－Pav）×Z t h ( j - c ) @t w 3
Rth( j- c) j-chermal resistance between junction and case
Z t h ( j - c ) @t w 2 2-Transient thermal impedance at the time of tw2 between junction and case
Z t h ( j - c ) @t w 3 -cTransient thermal impedance at the time of tw3 between junction and case
Using the above calculated Δ T ( j - c ) , the junction temperature can be calculated as
Tvj＝Tc＋ΔT ( j - c ) （Here Tc is measurement value at the position of just under chip by e.g. thermocouple）
Please also note that the case temperature TC should not exceed its maximum rating TCmax.
<CMH-11733> 52
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<IGBT module>
Heat sink selection
Figure 10-10 shows the thermal equivalent circuit when multiple modules are mounted on one heat sink.
In this equivalent circuit, the temperature of the heat sink is Ts＝Ta＋（PQ(AV)＋PD(AV)）×N×Rth(s-a)
Rth(j-c)D
T a：Ambient temperature
Rth(c-s)
PD(AV)
PQ(AV)：average power loss of transistor part（W）
Rth(j-c)Q
PD(AV)：average power loss of diode part （W）
PQ(AV) Rth(s-a)
N：number of modules
Rth(j-c)D
Rth(s-a)：thermal resistance from heatsink to ambient（K/W）
Ts
Rth(c-s) Ts
Rth(j-c)Q
Rth(j-c)D
Rth(c-s)
Rth(j-c)Q
Figure 10-10. Thermal equivalent circuit
In this equivalent circuit, case temperature TC is calculated as:
TC＝Ts＋（PQ(AV)＋PD(AV)）×Rth(c-s)
＝Ta＋（PQ(AV)＋PD(AV)）×N×Rth(s-a)＋（PQ(AV)＋PD(AV)）×Rth(c-s)
Rth(c-s)： Contact thermal resistance between case and heat sink
Heat sink should be selected so that the calculated Tc above not exceed the value TC(max) which is obtained in 10.2.(1).
Therefore, the required thermal resistance of heat sink is calculated as:
TC＝Ta＋（PQ(AV)＋PD(AV)）×N×Rth(s-a)＋（PQ(AV)＋PD(AV)）×Rth(c-s) ＜TC(max)
𝑇𝑇𝐶𝐶(𝑚𝑚𝑚𝑚𝑚𝑚) − 𝑇𝑇𝑎𝑎 − (𝑃𝑃𝑄𝑄(𝐴𝐴𝐴𝐴) + 𝑃𝑃𝐷𝐷(𝐴𝐴𝐴𝐴) ) × 𝑅𝑅𝑡𝑡ℎ(𝑐𝑐−𝑠𝑠) )

∴ 𝑅𝑅𝑡𝑡ℎ(𝑠𝑠−𝑎𝑎) <
(𝑃𝑃𝑄𝑄(𝐴𝐴𝐴𝐴) + 𝑃𝑃𝐷𝐷(𝐴𝐴𝐴𝐴) ) × 𝑁𝑁
The TC(max) value obtained from the power loss of the IGBT part should be compared with the value obtained from the power
loss of the diode part, and the lower TC(max) value should be applied.
(However, please also note that the case temperature TC should not exceed its maximum rating TCmax)
<CMH-11733> 53
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<IGBT module>
General precautions when applying to inverters
The above calculation method is a simplified calculation method. Please pay attention to the following when conducting
detailed calculations.
① One period of output current should be divided into multiple pulses and it is necessary to calculate the the power loss and
the temperature based on actual "PWM duty", "Output current" and "VCEsat, VEC, Eon, Eoff, Err at the output current" ,and to
accumulate the results.
② PWM duty depends on the signal generation method (modulation method).
③ The relationship between the output current waveform (or output current) and the PWM duty depends on various factors
such as signal generation method (modulation method), load, etc. Therefore the output current should be based on actual
measured waveforms.
④ For VCEsat and VEC, use the value of Tvj = 150℃.
⑤ For Eon, Eoff, and Err, the value at Tvj = 150℃ under half bridge operation is used.
General precautions for thermal design
① It is necessary to consider the operating conditions that make the worst case losses.
② Temperature change due to output current frequency/period should be taken into account.
(Approximately +30% at 60 Hz. When the output current fundamental frequency is low (several Hz) and lasts several
seconds, it will be similar as the temperature when DC continuous switching operation at its peak current.
③ In addition to Tvjmax, the influence of power cycles and thermal cycles must also be taken into consideration.
<CMH-11733> 54
Ver.1.1
<IGBT module>
Keep safety first in your design

This product is a product for general industrial use. The performance, quality and support of the product is guaranteed in
the “Customer’s Std. Spec.”.
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always a possibility that trouble may occur with them by power cycle lifetime, thermal cycle lifetime, or other and
when used under special circumstances (e.g. high humidity, high dust, high salinity, high elevation, environments with
excessive organic matter / corrosive gas / explosive gas, or a situation where the product receives high mechanical stress).
During customer research and development, please evaluate it not only with a single semiconductor but also in the entire
system, and judge whether it is appropriate. Furthermore, trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (i) placement of substitutive/redundant, auxiliary circuits (e.g. appropriate fuse or circuit breaker between the power
supply and semiconductor products) (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Please pay attention to the safety of the design.
Notes regarding use of this material

· These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor
product best suited to the customer's application; they do not convey any license under any intellectual property rights, or
any other rights, belonging to Mitsubishi Electric Corporation or a third party.
· Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party's rights,
originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained
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· All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents
information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric
Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product
information before purchasing a product listed herein. The information described here may contain technical inaccuracies or
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various means, including the Mitsubishi Semiconductor home page (www.MitsubishiElectric.com/semiconductors/)
· The information described in this document was produced carefully for the sake of accuracy, but Mitsubishi Electric
assumes no responsibility for any damage to the customer that may be caused by written errors in this document.
· W hen using any or all of the information contained in these materials, including product data, diagrams, charts, programs,
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· Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is
used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an
authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any
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· The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these
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· Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further
details on these materials or the products contained therein
Company names and product names mentioned are generally trademarks or registered trademarks of each company.
<CMH-11733> 55
Ver.1.1

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<IGBT MODULES>

7th Generation IGBT Module NX type / std type Application Note

7th Generation IGBT Module T-Series

NX Type & std Type

3. Product label information ................................................................................................................................... 13

4. Line up (List of available parts) ......................................................................................................................... 16

6. Safety standard (UL Standard) ........................................................................................................................... 21

8. Precautions on Actual use.................................................................................................................................. 26

9. How to use the IGBT module.............................................................................................................................. 38

10. Power loss and heat dissipation design ....................................................................................................... 48

NX Type std Type

1) Reduced power loss of the applied products

3) Simplification of the assembly process of the applied products

※ CSTBT™: Our proprietary IGBT utilizing carrier accumulation effect

Reduction of on-voltage (VCEsat) and turn-off loss (Eoff)

110 6th generation

Figure 1-1. Tradeoff Comparison

Turn off energy :Eoff (mJ)

RG = 2Ω 200ns / div RG = 10Ω 200ns / div

Ic: 200A / div Ic: 200A / div

VCE: 200V / div VCE: 200V / div

Figure 1-3. Turn-off waveforms (CM450DX-24T)

Package structure and features (NX type)

6th Generation Internal structure 7th Generation Internal Structure

Insulator Solder Baseplate Common substrate: Insulated Metal Baseplate

Item 6th Generation NX 7th Generation NX Advantage

Weight※ 350 g 300 g (15% lighter)

・ Internal structure of the 7th generation module (NX type)

・ Compatible and light weight package

・ Press-fit pin compatible

6th Generation Internal Structure 7th Generation Internal Structure

Insulator Solder Baseplate Common substrate: Thick Metal Substrate

Wire connection Ultrasonic connection Parallel plate structure

Item 6th Generation std 7th Generation std Advantage

Weight※ 580 g 260 g (55% lighter)

・ Internal structure of the 7th generation module (std type)

・ Compact, lightweight package

・ PC-TIM applicable (option)

The structure diagram of CM150RX-13T is shown as a representative example.

⑧Main terminal ④Wire ⑥Encapsulation ⑨Control terminal

⑤Case ③Common substrate ⑦Adhesive

The structure diagram of CM 300DY-13T is shown as a representative example.

⑨ Main terminal ⑥Lid ⑩Control terminal

Parts Material Flame Retardance

Regulations prohibiting the use of four heavy metals and two

High thermal conductivity grease. Solid phase at normal

2.3. Temperature ra tings

2.4. Thermal ratings and characte ris tics

Collector current rating

Connection Refer to the table below.

Package Outline and other changes

Withstand voltage class (See table below)

Withstand voltage class (50 times the number rated VCES)

Connection (There is no display on the label)

- This product complies with the RoHS Directive (2011/65/EU).

2 Lot number configuration

3 Module Nomenclature (example for 2 elements)

"SP" represents a space (blank = equivalent to ASCII code number 32).

7th -generation T Series NX type