Name: Nischay

Roll Number: 19209

Experiment 4:
Hall Effect
Aim: To measure the Hall voltage as a function of sample current (𝐼 ), sample temperature
(𝑇 ) for n and p-doped germanium crystals.

Apparatus: Hall Effect control unit, sample holder with rigid base, Hall effect cartridge,
Digital Gauss meter, Gauss probe mount, electromagnet, electromagnet power supply,
electromagnet connecting cable, AC power code.

Theory:
When a current carrying conductor is placed in a transverse magnetic field, an electric field
E is induced in the conductor perpendicular to both I and B. This phenomenon is known as
Hall effect.
The charge carriers of the conductor normally travel in a straight line when subjected to a
potential difference. However, if placed in a transverse magnetic field, the net force on the
charge carrier is given as:
𝑭 = 𝑞(𝑬 + 𝒗 × 𝑩) (1)
Where 𝒗 = velocity of the charge carriers. The charge carriers travel in a curved path due to
this additional force. This results in a net accumulation of positive/negative charges in
either side of the conductor along the direction of the induced emf. This induced emf, also
known as the Hall voltage depends on the intensity of the passing current, the magnetic
field, density of charge carriers.
1 𝐵𝐼
𝑉 = (2)
𝑛𝑒 𝑑
Where n is the concentration of charges and d is the thickness of the sample (extrinsic
Germanium crystal, p-doped and n-doped).

The factor is called the Hall coefficient

𝑅 = (3)
From (2) & (3), we get
𝑉 𝑑
𝑅 = (4)
𝐼 𝐵
The Hall coefficient can be used to determine the mobility of the charge carriers:
μ =𝑅 ∙σ (5)
Where σ = conductivity of the material
By plotting a V-I graph, its slope can be used to determine the hall coefficient 𝑅 and the
carrier mobility μ.

Observations:
(1) We calibrate the magnetic flux density:

Current (A) Magnetic Field

(x 10 Gauss)
0.0 18
0.1 32
0.2 45
0.3 58
0.4 72
0.5 87
0.6 104
0.7 120
0.8 136
0.9 153
1 168
1.1 184
1.2 198
1.3 215
1.4 228
1.5 244
1.6 258
1.7 274
1.8 288
1.9 302
2.0 316
(2) Measured hall voltage vs Current at zero magnetic field:
Current (mA) P-type N-type
Hall voltage (mV) Hall voltage (mV)
0.0 0.5 0.4
0.5 2.0 4.6
1.0 2.6 6.4
1.5 3.5 9.0
2.0 5.0 12.5
2.5 6.4 15.3
3.0 7.4 15.6
3.5 8.3 15.6
4.0 9.1 15.8
4.5 9.9 15.8
5.0 10.9 15.7
5.5 12.2 15.7
6.0 13.3 15.6
6.5 14.5 15.6
7.0 14.6 15.5
7.5 14.7 15.5
8.0 14.6 15.3
(3) Measured hall voltage vs Current at B = 870 Gauss:
P-type N-type
Current (mA) Measured 𝑉 Corrected 𝑉 Measured 𝑉 Corrected 𝑉
(mV) (mV) (mV) (mV)
0.0 0.5 0.0 0.5 0.1
0.5 1.4 -0.6 7.0 2.4
1.0 1.8 -0.8 9.5 3.1
1.5 2.4 -1.1 13.5 4.5
2.0 3.3 -1.7 18.6 6.1
2.5 4.2 -2.2 22.6 7.3
3.0 4.9 -2.5 22.7 7.1
3.5 5.5 -2.8 22.7 7.1
4.0 6.1 -3.0 22.6 6.8
4.5 6.7 -3.2 22.5 6.7
5.0 7.4 -3.5 22.3 6.6
5.5 8.2 -4.0 22.2 6.5
6.0 8.8 -4.5 22.1 6.5
6.5 8.8 -5.7 22.0 6.4
7.0 8.8 -5.8 21.9 6.4
7.5 8.7 -6.0 21.7 6.2
8.0 8.7 -5.9 21.5 6.2

VH vs IH graph at B = 870 Gauss

8

P-type
4
N-type
Hall Voltage (mV)

0
0 1 2 3 4 5 6 7 8 9

-2

-4

-6

-8
Current (mA)
(4) Measured hall voltage vs Current at B = 1680 Gauss:
P-type N-type
Current (mA) Measured 𝑉 Corrected 𝑉 Measured 𝑉 Corrected 𝑉
(mV) (mV) (mV) (mV)
0.0 0.4 -0.1 0.6 0.2
0.5 0.9 -1.1 9.6 4.0
1.0 1.1 -1.5 11.9 5.5
1.5 1.4 -2.1 17.0 8.0
2.0 1.8 -3.2 23.9 11.4
2.5 2.2 -4.2 29.5 14.2
3.0 2.5 -4.9 29.7 14.1
3.5 2.7 -5.6 29.6 14.0
4.0 3.0 -6.1 29.6 13.8
4.5 3.3 -6.6 29.5 13.7
5.0 3.7 -7.2 29.4 13.5
5.5 4.2 -8.0 29.2 13.5
6.0 4.5 -8.8 28.9 13.3
6.5 4.5 -10.0 28.7 13.1
7.0 4.5 -10.1 28.6 13.1
7.5 4.4 -10.3 28.4 12.9
8.0 4.4 -10.2 28.1 12.8

VH vs IH graph at B = 1680 Gauss

20

15

10
P-type
Hall Voltage (mV)

N-type
5

0
0 1 2 3 4 5 6 7 8 9

-5

-10

-15
Current (mA)
(5) Measured hall voltage vs Current at B = 2440 Gauss:
P-type N-type
Current (mA) Measured 𝑉 Corrected 𝑉 Measured 𝑉 Corrected 𝑉
(mV) (mV) (mV) (mV)
0.0 0.3 0.2 0.6 0.2
0.5 0.4 -1.6 10.2 5.6
1.0 0.4 -2.2 15.2 8.8
1.5 0.4 -3.1 20.3 11.5
2.0 0.5 -4.5 29.0 16.4
2.5 0.5 -5.9 36.6 21.3
3.0 0.6 -6.8 37.4 21.8
3.5 0.7 -7.6 37.4 21.8
4.0 0.8 -8.3 37.3 21.5
4.5 0.9 -9.0 37.2 21.4
5.0 1.1 -9.8 37.1 21.4
5.5 1.3 -10.9 36.8 21.1
6.0 1.4 -11.9 36.6 21.0
6.5 1.5 -13.0 36.2 20.6
7.0 1.6 -13.0 36.0 20.5
7.5 1.6 -13.1 36.5 20.1
8.0 1.6 -13.0 35.4 20.1

VH vs IH graph at B = 2440 Gauss

25

20

15

P-type
Hall Voltage (mV)

10 N-type

0
0 1 2 3 4 5 6 7 8 9

-5

-10

-15
Current (mA)
(6) Hall voltage vs Temperature:
Temperature (oC) Hall Voltage (mV)
p-type n-type
30 3.6 4.7
35 2.6 4.6
40 2.4 4.5
45 2.1 4.2
50 1.6 3.6
55 1.3 2.8
60 1.2 2.5
65 1.1 1.9
70 1.1 1.5

VH vs Temperature

4.5

p-type
4 n-type

3.5
Hall Voltage (mV)

2.5

1.5

1
30 35 40 45 50 55 60 65 70
Temperature (Celsius)

(7) Physical constants:

𝑑 = 0.05 𝑐𝑚
𝜌 = 10 𝜔𝑐𝑚
𝜎 = 0.1𝜔 𝑐𝑚
Calculations:
(1) Hall coefficient:
𝑉 𝑑
𝑅 =
𝐼 𝐵
(2) Carrier density:
1
𝑛=
𝑅 𝑒
(3) Charge mobility:
μ =𝑅 ∙σ

Note: 1 Gauss = 10-8 kg.s/cm2.C

(A) For B = 870 Gauss:

(i) For p-type, 𝑠𝑙𝑜𝑝𝑒 = −0.7375 𝑉/𝐴
𝑉 𝑑
𝑅 = × 10 𝑐𝑚 /𝐶
𝐼 𝐵
𝑅 = −0.7375 × 0.05 × 10 /870 = −4.24 × 10 𝑐𝑚 /𝐶
1 1
𝑛= = = 1.47 × 10 𝑐𝑚
𝑅 𝑒 4.24 × 10 × 1.6 × 10
𝜇 = 𝑅 𝜎 = 4.24 × 10 × 0.1 𝑐𝑚 𝑣 𝑠
𝜇 = 4.24 × 10 𝑐𝑚 𝑣 𝑠

(ii) For n-type, 𝑠𝑙𝑜𝑝𝑒 = 2.88 𝑉/𝐴

𝑉 𝑑
𝑅 = × 10 𝑐𝑚 /𝐶
𝐼 𝐵
𝑅 = 2.88 × 0.05 × 10 /870 = 1.66 × 10 𝑐𝑚 /𝐶
1 1
𝑛= = = 3.77 × 10 𝑐𝑚
𝑅 𝑒 1.66 × 10 × 1.6 × 10
𝜇 = 𝑅 𝜎 = 1.66 × 10 × 0.1 𝑐𝑚 𝑣 𝑠
𝜇 = 1.66 × 10 𝑐𝑚 𝑣 𝑠
(B) For B = 1680 Gauss:
(i) For p-type, 𝑠𝑙𝑜𝑝𝑒 = −1.523 𝑉/𝐴
𝑉 𝑑
𝑅 = × 10 𝑐𝑚 /𝐶
𝐼 𝐵
𝑅 = −1.523 × 0.05 × 10 /1680 = −4.53 × 10 𝑐𝑚 /𝐶
 1 1
𝑛= = = 1.38 × 10 𝑐𝑚
𝑅 𝑒 4.53 × 10 × 1.6 × 10
𝜇 = 𝑅 𝜎 = 4.53 × 10 × 0.1 𝑐𝑚 𝑣 𝑠
𝜇 = 4.53 × 10 𝑐𝑚 𝑣 𝑠

(ii) For n-type, 𝑠𝑙𝑜𝑝𝑒 = 5.6 𝑉/𝐴

𝑉 𝑑
𝑅 = × 10 𝑐𝑚 /𝐶
𝐼 𝐵
𝑅 = 5.6 × 0.05 × 10 /1680 = 1.67 × 10 𝑐𝑚 /𝐶
1 1
𝑛= = = 3.74 × 10 𝑐𝑚
𝑅 𝑒 1.67 × 10 × 1.6 × 10
𝜇 = 𝑅 𝜎 = 1.67 × 10 × 0.1 𝑐𝑚 𝑣 𝑠
𝜇 = 1.67 × 10 𝑐𝑚 𝑣 𝑠
(C) For B = 2440 Gauss:
(i) For p-type, 𝑠𝑙𝑜𝑝𝑒 = −2.046 𝑉/𝐴
𝑉 𝑑
𝑅 = × 10 𝑐𝑚 /𝐶
𝐼 𝐵
𝑅 = −2.046 × 0.05 × 10 /2440 = −4.19 × 10 𝑐𝑚 /𝐶
1 1
𝑛= = = 1.49 × 10 𝑐𝑚
𝑅 𝑒 4.19 × 10 × 1.6 × 10
𝜇 = 𝑅 𝜎 = 4.19 × 10 × 0.1 𝑐𝑚 𝑣 𝑠
𝜇 = 4.19 × 10 𝑐𝑚 𝑣 𝑠

(ii) For n-type, 𝑠𝑙𝑜𝑝𝑒 = 8.44 𝑉/𝐴

𝑉 𝑑
𝑅 = × 10 𝑐𝑚 /𝐶
𝐼 𝐵
𝑅 = 8.44 × 0.05 × 10 /2440 = 1.73 × 10 𝑐𝑚 /𝐶
1 1
𝑛= = = 3.61 × 10 𝑐𝑚
𝑅 𝑒 1.73 × 10 × 1.6 × 10
𝜇 = 𝑅 𝜎 = 1.73 × 10 × 0.1 𝑐𝑚 𝑣 𝑠
𝜇 = 1.73 × 10 𝑐𝑚 𝑣 𝑠
Result:
(a) Hall coefficient:
(1) At B = 870 Gauss, I = 0.5 A
(i) P-type: −4.24 × 10 𝑐𝑚 /𝐶
(ii) N-type: 1.66 × 10 𝑐𝑚 /𝐶
(2) At B = 1680 Gauss, I = 1.0 A
(i) P-type: −4.53 × 10 𝑐𝑚 /𝐶
(ii) N-type: 1.67 × 10 𝑐𝑚 /𝐶
(3) At B = 2440 Gauss, I = 1.5 A
(i) P-type: −4.19 × 10 𝑐𝑚 /𝐶
(ii) N-type: 1.73 × 10 𝑐𝑚 /𝐶
(b) Charge carrier density:
(1) At B = 870 Gauss, I = 0.5 A
(i) P-type: 1.47 × 10 𝑐𝑚
(ii) N-type: 3.77 × 10 𝑐𝑚
(2) At B = 1680 Gauss, I = 1.0 A
(i) P-type: 1.38 × 10 𝑐𝑚
(ii) N-type: 3.74 × 10 𝑐𝑚
(3) At B = 2440 Gauss, I = 1.5 A
(i) P-type: 1.49 × 10 𝑐𝑚
(ii) N-type: 3.61 × 10 𝑐𝑚
(c) Mobility of charges:
(1) At B = 870 Gauss, I = 0.5 A
(i) P-type: 4.24 × 10 𝑐𝑚 𝑣 𝑠
(ii) N-type: 1.66 × 10 𝑐𝑚 𝑣 𝑠
(2) At B = 1680 Gauss, I = 1.0 A
(i) P-type: 4.53 × 10 𝑐𝑚 𝑣 𝑠
(ii) N-type: 1.67 × 10 𝑐𝑚 𝑣 𝑠
(3) At B = 2440 Gauss, I = 1.5 A
(i) P-type: 4.19 × 10 𝑐𝑚 𝑣 𝑠
(ii) N-type: 1.73 × 10 𝑐𝑚 𝑣 𝑠

Precautions:
(1) The cartridges should be handled with care as they are fragile.
(2) Power supply current should not exceed 2A.
(3) Current through cartridge should not exceed 8 mA.
(4) Four probe must be connected directly to the Germanium crystal.