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    ASSIGNMENT

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    Elias Negash
    The document outlines an individual assignment and group assignment for an Applied Electronics course. The individual assignment contains 10 questions about semiconductor band theory, diode characteristics, and breakdown mechanisms. The group assignment contains 15 questions about diode and transistor biasing, characteristics, and circuit analysis including load lines and stability factors. Students must understand semiconductor physics, diode and transistor operation, and basic circuit analysis to complete the assignments.

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    ASSIGNMENT

    Uploaded by

    Elias Negash
    23 views3 pages
    The document outlines an individual assignment and group assignment for an Applied Electronics course. The individual assignment contains 10 questions about semiconductor band theory, diode characteristics, and breakdown mechanisms. The group assignment contains 15 questions about diode and transistor biasing, characteristics, and circuit analysis including load lines and stability factors. Students must understand semiconductor physics, diode and transistor operation, and basic circuit analysis to complete the assignments.

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    For wallaga university

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    The document outlines an individual assignment and group assignment for an Applied Electronics course. The individual assignment contains 10 questions about semiconductor band theory, diode characteristics, and breakdown mechanisms. The group assignment contains 15 questions about diode and transistor biasing, characteristics, and circuit analysis including load lines and stability factors. Students must understand semiconductor physics, diode and transistor operation, and basic circuit analysis to complete the assignments.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    23 views3 pages

    ASSIGNMENT

    Uploaded by

    Elias Negash
    The document outlines an individual assignment and group assignment for an Applied Electronics course. The individual assignment contains 10 questions about semiconductor band theory, diode characteristics, and breakdown mechanisms. The group assignment contains 15 questions about diode and transistor biasing, characteristics, and circuit analysis including load lines and stability factors. Students must understand semiconductor physics, diode and transistor operation, and basic circuit analysis to complete the assignments.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
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    WALLAGA UNIVERSITY

    COLLEGE OF ENGINEERING AND TECHNOLOGY


    DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
    I) APPLIED ELECTRONICS INDIVIDUAL ASSIGNMENT (20%)
    1. How does the band gap indicate whether or not your substance is an insulator,
    semiconductor or conductor?
    2. What is cut-in voltage or knee voltage of a diode?
    3. Can a bias voltage or bias current remain constant?
    4. What is the purpose of a p-type and n-type semiconductor?
    5. What is the purpose of understanding band theory?
    6. Why does semiconductor have fewer free electrons than a conductor?
    7. Which electrons are responsible for current in a material?
    8. By what process are the minority and majority carriers produced?
    9. What is the typical value of barrier potential for a germanium diode?
    10. When does reverse breakdown occur in a diode?

    II) APPLIED ELECTRONICS GROUP ASSIGNMENT (30%)

    1. Which bias condition produces majority carrier current?


    2. What happens to the barrier potential when the temperature increases?
    3. Explain how to generate the forward bias portion of the characteristic curve.
    4. Write at least five diode types with their applications
    5. What bias conditions must exist for a transistor to operate as an amplifier?
    6. What is a load line for Common Emitter circuit?
    7. What is reverse saturation current (ICO)?
    8. Draw and compare V-I characteristics of typical Ge and Si diodes.
    9. calculate the forward resistance of the germanium diode, at IF=60mA10. At IF = 60 mA,
    VF = 0.33 V.
    10. The voltage across a silicon diode at room temperature of 30ok is 0.71 V when 2.5 mA
    current flows through it. if the voltage increases to 0.8V, calculate the new diode current.
    11. In a certain transistor the emitter current is 1.02 times as large as the collector current. If
    the emitter current is 12 mA, find the base current.
    12. For the dynamic characteristic shown in figure below, determine the dynamic resistance at
    40 mA.
    13. Design a voltge divider bias circuit for the specified conditions. Vcc=12V, VCE=6V,IC=1
    mA, S=20, 𝛽=100 and VE=1V
    14. Find the load resistance for this circuit in figure below, for IF = 20 mA
    a) Draw Load line
    b) plot Q-point
    c) What is R L from the load line?

    15. In the circuit shown in fig below Vcc=24V, Rc=10k and RE=0.27 K. The transistor used
    has 𝛽=45. If under quiescent conditions, VCE=5V and VBE= 0.6V, calculate the value of
    RB and the value of stability factor s.

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