6N135

6N136
FEATURES
• Isolation Test Voltage: 2500 VACRMS
HIGH-SPEED 2.5 kV TRIOS
• TTL Compatible OPTOCOUPLER
• High Bit Rates: 1 Mbit/s
• High Common-Mode Interference Immunity
• Bandwidth 2 MHz Dimensions in inches (mm)
• Open-Collector Output
4 3 2 1 Pin
• External Base Wiring Possible One
I.D. Cathode
NC 1 8
• Field-Effect Stable by TRIOS* (VCC)
2 7 Base
• Underwriters Lab File #E52744 .268 (6.81)
.255 (6.48)
Anode (VB)
3 6 Collector
DESCRIPTION Cathode (VO)
4 5 Emitter
NC (GND)
The 6N135 and 6N136 are optocouplers with a 5 6 7 8
GaAIAs infrared emitting diode, optically coupled .390 (9.91)
.379 (9.63)
with an integrated photodetector which consists of
a photodiode and a high-speed transistor in a DIP-
8 plastic package. .045 (1.14) .305 typ.
.030 (.76) (7.75) typ.
Signals can be transmitted between two electri-
cally separated circuits up to frequencies of 2 .150 (3.81)
.130 (3.30)
MHz. The potential difference between the circuits .135 (3.43)
.115 (2.92)
to be coupled is not allowed to exceed the maxi- 4°
Typ.
.040 (1.02) 10°
.030 (.76 ) Typ.
mum permissible reference voltages.
.022 (.56) 3°–9°
Maximum Ratings .018 (.46)
.012 (.30)
.100 (2.54) .008 (.20)
Emitter Typ.

Reverse Voltage .................................................5 V

Characteristics (TA=0 to 70°C unless otherwise specified, TA=25°C typ.)
Forward Current ............................................25 mA
Peak Forward Current Emitter Symbol Unit Condition
(t =1 ms, duty cycle 50%) ............................50 mA Forward Voltage VF 1.6 (≤1.9) V IF=16 mA
Maximum Surge Forward Current Breakdown Voltage VBR ≥5 V IR=10 µA
(t ≤1 µs, 300 pulses/s).......................................1 A
Reverse Current IR 0.5 (≤10) µA VR=5 V
Thermal Resistance................................... 700 K/W
Total Power Dissipation (TA≤70°C) ...............45 mW Capacitance CO 125 pF VR=0 V, f=1 MHz

Detector Temperature Coeffi-

cient, Forward Voltage ∆VF /∆TA -1.7 mV/°C IF=16 mA
Supply Voltage ..................................... –0.5 to 15 V
Output Voltage .................................... –0.5 to 15 V Detector
Emitter-Base Voltage ......................................... 5 V Supply Current IF=16 mA, VO open,
Output Current.................................................8 mA Logic Low ICCL 150 µA VCC=15 V
Maximum Output Current ..............................16 mA Supply Current IF=0 mA, VO open,
Base Current .................................................. 5 mA Logic High ICCH 0.01 (≤1) µA VCC=15 V
Thermal Resistance................................... 300 K/W Output Voltage, IF=16 mA,
Total Power Dissipation (TA≤70°C) .............100 mW Output Low VCC=4.5 V
6N135 VOL 0.1 (≤0.4) V IO=1.1 mA
Package 6N136 VOL 0.1 (≤0.4) V IO=2.4 mA
Isolation Test Voltage (between emitter and
Output Current,
detector climate per DIN 40046, Output High ICH 3 (≤500) nA IF=0 mA,
part 2, Nov. 74 (t=1min.) ............... 2500 VACRMS VO=VCC=5.5 V
Pollution Degree (DIN VDE 0109) ......................... 2 Output Current, IF=0 mA
Creepage ...........................................................≥7 mm Output High ICH 0.01 (≤1) µA VO=VCC=15 V
Clearance ...........................................................≥7 mm
Current Gain HFE 150 VO=5 V, IO=3 mA
Comparative Tracking Index per
DIN IEC112/VDE 0303 part 1, Package
Group IIIa per DIN VDE 6110 ........................ 175 Coupling Capacitance
Isolation Resistance Input-Output CIO 0.6 pF f=1 MHz
VIO=500 V, TA = 25°C ............................... ≥1012 Ω Current Transfer Ratio
VIO=500 V, TA = 100°C ............................. ≥1011 Ω
Storage Temperature Range ....... –55°C to +125°C 6N135 CTR 16 (≥7) % IF=16 mA, VO=0.4 V,
Ambient Temperature Range ...... –55°C to +100°C 6N136 CTR 35 (≥19) % VCC=4.5 V, TA=25°C
Soldering Temperature (max. ≤10 sec., 6N135 CTR ≥5 % IF=16 mA, VO=0.5 V,
dip soldering ≥0.5 mm from 6N136 CTR ≥15 VCC=4.5 V
case bottom).............................................. 260°C
5–1
*TRIOS—TRansparent IOn Shield

This document was created with FrameMaker 4.0.4

Figure 1. Switching times Delay Time (IF=16 mA, VCC=5 V, TA=25°C)
IF High - Low
6N135 (RL=4.1 kΩ) tPHL 0.3 (≤1.5) µs
6N136 (RL=1.9 kΩ) tPHL 0.2 (≤0.8) µs

t Low - High
6N135 (RL=4.1 kΩ) tPLH 0.3 (≤1.5) µs
VO 6N136 (RL=1.9 kΩ) tPLH 0.2 (≤0.8) µs
5V

1.5 V Common Mode Interference Immunity

VOL
t
(VCM=10 VP-P, VCC=5 V, TA=25°C)
tPHL tPLH High (IF=0 mA)
Pulse generator 6N135 (RL=4.1 kΩ) CMH 1000 V/µs
ZO=50 Ω 6N136 (RL=1.9 kΩ) CMH 1000 V/µs
tr,tf=5 ns
duty cycle 10% Low (IF=16 mA)
t≤100 µs
6N135 (RL=4.1 kΩ) CML 1000 V/µs
1 8 5V
6N136 (RL=1.9 kΩ) CML 1000 V/µs
IF
2 7 RL
IF Monitor
Figure 3. Output characteristics-6N135
3 6 VO Output current versus output voltage
5
(TA=25°C, VCC=5 V)
4
100 Ω CL
15 pF

Figure 2. Common-mode interference immunity

VCM

10 V 90% 10%

10% 90%
0V
t
tr tf
VO

5V

A: IF=0 mA
t
VO

B: IF=16 mA
VOL
t
Figure 4. Output characteristics-6N136
Output current versus output voltage
(TA=25°C, VCC=5 V)
IF 1 8 5V

2 7 RL
A
B
3 6 VO
VFF
4 5

+VCM Pulse generator

ZO=50 Ω
tr,tf=8 ns

6N135/136
5–2
Figure 5. Permissible forward current Figure 8. Small signal transfer ratio ver- Figure 11. Delay times versus ambi-
of emitting diode versus ambient sus forward current (VCC=5 V, TA=25°C) ent temperature (IF=16 mA, VCC=5 V,
temperature 6N135: RL=4.1 kΩ, 6N136: RL=1.9 kΩ)

Figure 6. Permissible total power dissi- Figure 9. Current transfer ratio (normal- Figure 12. Current transfer ratio (nor-
pation versus ambient temperature ized) versus ambient temperature (nor- malized) versus forward current
malized to IF=16 mA, VO=0.4 V, VCC=5 V, (IF=16 mA, VO=0.4 V, VCC=5 V,
TA=25°C) TA=25°C)

Figure 7. Forward current of emitting Figure 10. Output current (high)versus

diodeversus forward voltage (TA=25°C) ambient temperature
(VO=VCC=5 V, IF=0)

6N135/136
5–3