Freescale Semiconductor Document Number: AFT05MP075N

Technical Data Rev. 1, 8/2014

RF Power LDMOS Transistors

High Ruggedness N--Channel AFT05MP075NR1
Enhancement--Mode Lateral MOSFETs AFT05MP075GNR1
Designed for mobile two--way radio applications with frequencies from
136 to 520 MHz. The high gain, ruggedness and broadband performance of
these devices make them ideal for large--signal, common source amplifier 136–520 MHz, 70 W, 12.5 V
applications in mobile radio equipment. BROADBAND
Typical Performance: 12.5 V, TA = 25C, CW RF POWER LDMOS TRANSISTORS
Gps D Pout
Frequency (dB) (%) (W)

136 MHz 21.0 68.0 76

450--520 MHz (1) 14.6 65.8 75
520 MHz (2) 18.5 68.5 70

TO--270WB--4
Load Mismatch/Ruggedness
AFT05MP075NR1
Frequency Signal Pin Test
(MHz) Type VSWR (W) Voltage Result
520 (2) CW > 65:1 at all 2 17 No Device
Phase Angles (3 dB Overdrive) Degradation
1. Measured in 450--520 MHz UHF broadband reference circuit.
2. Measured in 520 MHz narrowband test circuit.
TO--270WBG--4
Features AFT05MP075GNR1
 Characterized for Operation from 136 to 520 MHz
 Unmatched Input and Output Allowing Wide Frequency Range Utilization
 Integrated ESD Protection
 Integrated Stability Enhancements
 Wideband — Full Power Across the Band Gate A Drain A
 Exceptional Thermal Performance
 Extreme Ruggedness
 High Linearity for: TETRA, SSB, LTE Drain B
Gate B
 In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel.
Typical Applications
 Output Stage VHF Band Mobile Radio (Top View)
 Output Stage UHF Band Mobile Radio Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Pin Connections

 Freescale Semiconductor, Inc., 2013–2014. All rights reserved. AFT05MP075NR1 AFT05MP075GNR1

RF Device Data
Freescale Semiconductor, Inc. 1
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +40 Vdc
Gate--Source Voltage VGS --6.0, +12 Vdc
Operating Voltage VDD 17, +0 Vdc
Storage Temperature Range Tstg --65 to +150 C
Case Operating Temperature Range TC –40 to +150 C
Operating Junction Temperature Range (1,2) TJ –40 to +225 C
Total Device Dissipation @ TC = 25C PD 690 W
Derate above 25C 3.45 W/C

Table 2. Thermal Characteristics

Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case RJC 0.29 C/W
Case Temperature 80C, 70 W CW, 12.5 Vdc, IDQ(A+B) = 400 mA, 520 MHz

Table 3. ESD Protection Characteristics

Test Methodology Class
Human Body Model (per JESD22--A114) 2, passes 2500 V
Machine Model (per EIA/JESD22--A115) A, passes 250 V
Charge Device Model (per JESD22--C101) IV, passes 2000 V

Table 4. Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 C

Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Off Characteristics
Zero Gate Voltage Drain Leakage Current IDSS — — 3 Adc
(VDS = 40 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current IDSS — — 2 Adc

(VDS = 12.5 Vdc, VGS = 0 Vdc)
Gate--Source Leakage Current IGSS — — 600 nAdc
(VGS = 5 Vdc, VDS = 0 Vdc)

On Characteristics
Gate Threshold Voltage VGS(th) 1.7 2.1 2.5 Vdc
(VDS = 10 Vdc, ID = 295 Adc)

Drain--Source On--Voltage VDS(on) — 0.14 — Vdc

(VGS = 10 Vdc, ID = 3.0 Adc)
Forward Transconductance (4) gfs — 7.3 — S
(VGS = 10 Vdc, ID = 8 Adc)

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
(continued)

AFT05MP075NR1 AFT05MP075GNR1
RF Device Data
2 Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Dynamic Characteristics (1)
Reverse Transfer Capacitance Crss — 2.3 — pF
(VDS = 12.5 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Output Capacitance Coss — 64 — pF

(VDS = 12.5 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Input Capacitance Ciss — 148 — pF
(VDS = 12.5 Vdc, VGS = 0 Vdc  30 mV(rms)ac @ 1 MHz)

Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 12.5 Vdc, IDQ(A+B) = 400 mA, Pin = 1 W, f = 520 MHz
Common--Source Amplifier Output Power Pout — 70 — W
Drain Efficiency D — 68.5 — %
Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ(A+B) = 400 mA
Frequency Signal Pin
(MHz) Type VSWR (W) Test Voltage, VDD Result

520 CW > 65:1 at all Phase Angles 2 17 No Device Degradation

(3 dB Overdrive)
1. Each side of device measured separately.
2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.

AFT05MP075NR1 AFT05MP075GNR1
RF Device Data
Freescale Semiconductor, Inc. 3
 TYPICAL CHARACTERISTICS

300 11
Ciss TA = 25C VGS = 3.75 Vdc
10
9

IDS, DRAIN CURRENT (AMPS)

100
8
C, CAPACITANCE (pF)

Coss 7 3.5 Vdc

6
5
10
4 3.25 Vdc
3
Crss 2 2.5 Vdc 3 Vdc
1
Measured with 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc
1 0
0 5 10 15 20 0 2 4 6 8 10 12 14 16 18 20
VDS, DRAIN--SOURCE VOLTAGE (VOLTS) VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Note: Each side of device measured separately. Note: Measured with both sides of the transistor tied together.
Figure 2. Capacitance versus Drain--Source Voltage Figure 3. Drain Current versus Drain--Source Voltage

108
VDD = 12.5 Vdc
ID = 6.3 Amps
107 7.8 Amps
MTTF (HOURS)

106

9.4 Amps

105

104
90 110 130 150 170 190 210 230 250
TJ, JUNCTION TEMPERATURE (C)

Note: MTTF value represents the total cumulative operating time

under indicated test conditions.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.

Figure 4. MTTF versus Junction Temperature -- CW

AFT05MP075NR1 AFT05MP075GNR1
RF Device Data
4 Freescale Semiconductor, Inc.
 520 MHz NARROWBAND PRODUCTION TEST FIXTURE

C1 C2 C3 C19 C20

AFT05MP075N
B1 Rev. 1 C17 C18
C4

C15 C16

COAX1 L1 L3 COAX3

C6
C21 C22

C9 C24
C7

CUT OUT AREA

C8* C10
C5 C23*

COAX2 L2 L4 COAX4

C25
C26

B2 C27 C28
C14

C11 C12 C13 C29 C30

*C8 and C23 are mounted vertically.

Figure 5. AFT05MP075NR1 Narrowband Test Circuit Component Layout — 520 MHz

Table 6. AFT05MP075NR1 Narrowband Test Circuit Component Designations and Values — 520 MHz
Part Description Part Number Manufacturer
B1, B2 Ferrite Beads 2743019447 Fair-Rite
C1, C11 22 F, 35 V, Tantalum Capacitors T491X226K035AT Kemet
C2, C12, C18, C28 0.1 F Chip Capacitors CDR33BX104AKWS AVX
C3, C13 220 nF Chip Capacitors C1812C224K5RAC-TU Kemet
C4, C14 2.2 F Chip Capacitors C1825C225J5RAC-TU Kemet
C5 5.1 pF Chip Capacitor ATC100B5R1CT500XT ATC
C6, C7 20 pF Chip Capacitors ATC100B200JT500XT ATC
C8 16 pF Chip Capacitor ATC100B160JT500XT ATC
C9 36 pF Chip Capacitor ATC100B360JT500XT ATC
C10 2.7 pF Chip Capacitor ATC100B2R7BT500XT ATC
C15, C25 240 pF Chip Capacitors ATC100B241JT200XT ATC
C16, C26 2.2 F Chip Capacitors G2225X7R225KT3AB ATC
C17, C27 0.1 F Chip Capacitors C1812F104K1RAC--TU Kemet
C19, C20, C29, C30 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26-RH Multicomp
C21 51 pF Chip Capacitor ATC100B510GT500XT ATC
C22, C24 100 pF Chip Capacitors ATC100B101JT500XT ATC
C23 24 pF Chip Capacitor ATC100B240JT500XT ATC
L1, L2 5.0 nH Inductors A02TKLC Coilcraft
L3, L4 17.5 nH Inductors GA3095--ALC Coilcraft
Coax1, 2, 3, 4 25  Semi Rigid Coax, 2.4 Shield Length UT-141C-25 Micro-Coax
PCB 0.030, r = 2.55 AD255A Arlon

AFT05MP075NR1 AFT05MP075GNR1
RF Device Data
Freescale Semiconductor, Inc. 5
6
+ + VSUPPLY
B1
VBIAS C15 C16 C17 C18 C19 C20
+
L3
C1 C2 C3 C4
COAX1 COAX3
L1 Z8

Z9 Z10 Z11 Z12

Z7
Z2 Z3 Z4 Z5 Z6 C22
RF RF
INPUT Z1 C6 Z13 Z14 OUTPUT

C5 C8 C9 DUT C21 C23

AFT05MP075NR1 AFT05MP075GNR1
Z15 Z16 Z17 Z18 Z19
C10

C7 Z22 Z23 Z24 Z25

Z20
C24
L2 Z21
COAX2 COAX4
B2
VBIAS L4
+
C11 C12 C13 C14
+ + VSUPPLY

C25 C26 C27 C28 C29 C30

Figure 6. AFT05MP075NR1 Narrowband Test Circuit Schematic — 520 MHz

Table 7. AFT05MP075NR1 Narrowband Test Circuit Microstrips — 520 MHz

Microstrip Description Microstrip Description
Z1 0.366  0.082 Microstrip Z8*, Z21* 0.672  0.150 Microstrip
Z2, Z15 0.010  0.125 Microstrip Z9, Z22 0.290  0.522 Microstrip
Z3, Z16 0.018  0.125 Microstrip Z10, Z23 0.590  0.230 Microstrip
Z4, Z17 0.135  0.125 Microstrip Z11, Z24 0.030  0.230 Microstrip
Z5, Z18 0.100  0.125 Microstrip Z12, Z25 0.010  0.230 Microstrip
Z6, Z19 0.430  0.740 Microstrip Z13 0.154  0.082 Microstrip
Z7*, Z20* 0.726  0.058 Microstrip Z14 0.100  0.082 Microstrip
* Line length includes microstrip bends

Freescale Semiconductor, Inc.

RF Device Data
 TYPICAL CHARACTERISTICS — 520 MHz

120
VDD = 13.6 Vdc, Pin = 1 W
100

Pout, OUTPUT POWER (WATTS)

VDD = 12.5 Vdc, Pin = 1 W
80
VDD = 13.6 Vdc, Pin = 0.5 W
60

40 VDD = 12.5 Vdc

Pin = 0.5 W

20

f = 520 MHz
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 7. Output Power versus Gate--Source Voltage

21 80

20 70

Pout, OUTPUT POWER (WATTS)

19 60
Gps

D, DRAIN EFFICIENCY (%)

Gps, POWER GAIN (dB)

18 50

17 40
D Pout 30
16

15 20

14 VDD = 12.5 Vdc, IDQ(A+B) = 400 mA 10

f = 520 MHz
13 0
0.1 1 3
Pin, INPUT POWER (WATTS)
Figure 8. Power Gain, Output Power and Drain
Efficiency versus Input Power

VDD = 12.5 Vdc, IDQ(A+B) = 400 mA, Pout = 70 W

f Zsource Zload
MHz  
520 0.91 + j2.37 2.56 + j0.27
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload = Test circuit impedance as measured from
drain to drain, balanced configuration.

Input Device Output

+ -- Matching
Matching Under
Network Test Network
50  50 

-- +

Zsource Zload

Figure 9. Narrowband Series Equivalent Source and Load Impedance — 520 MHz

AFT05MP075NR1 AFT05MP075GNR1
RF Device Data
Freescale Semiconductor, Inc. 7
 450--520 MHz UHF BROADBAND REFERENCE CIRCUIT

Table 8. 450--520 MHz UHF Broadband Performance (In Freescale Reference Circuit, 50 ohm system)
VDD = 12.5 Volts, IDQ(A+B) = 500 mA, TA = 25C, CW
Frequency Gps D Pout
(MHz) (dB) (%) (W)
450 15.9 65.8 75
485 14.6 72.9 75
520 15.1 71.1 75

Table 9. Load Mismatch/Ruggedness (In Freescale Reference Circuit)

Frequency Signal Pin
(MHz) Type VSWR (W) Test Voltage, VDD Result

485 CW > 65:1 at all 6 17 No Device

Phase Angles (3 dB Overdrive) Degradation

AFT05MP075NR1 AFT05MP075GNR1
RF Device Data
8 Freescale Semiconductor, Inc.
 450--520 MHz UHF BROADBAND REFERENCE CIRCUIT

C15 C19 C21

B1 C23
C16
C20 C22
C17
L3
C7
L1 C18 C9
C3 C5
C11
R1
R2 Q1 R3
C14*
C1 C2 C24 C13
L2 C12
C4 C8 C10
C6
AFT05MP075N Rev. 1

*C14 is mounted vertically.

Figure 10. AFT05MP075NR1 UHF Broadband Reference Circuit Component Layout — 450--520 MHz

Table 10. AFT05MP075NR1 UHF Broadband Reference Circuit Component Designations and Values — 450--520 MHz
Part Description Part Number Manufacturer
B1 Ferrite Bead 2661000101 Fair-Rite
C1, C3, C4 10 pF Chip Capacitors ATC600F100JT250XT ATC
C2 15 pF Chip Capacitor ATC600F150JT250XT ATC
C5, C6 56 pF Chip Capacitors ATC600F560JT250XT ATC
C7, C8 33 pF Chip Capacitors ATC800B330JT500XT ATC
C9, C10 30 pF Chip Capacitors ATC800B300JT500XT ATC
C11, C12 5.6 pF Chip Capacitors ATC800B5R6CT500XT ATC
C13 16 pF Chip Capacitor ATC800B160JT500XT ATC
C14 100 pF Chip Capacitor ATC800B101JT500XT ATC
C15 47 F, 16 V Tantalum Capacitor T491D476K016AT Kemet
C16, C21 1000 pF Chip Capacitors ATC100B102JT50XT ATC
C17, C20 200 pF Chip Capacitors ATC100B201JT300XT ATC
C18, C19 100 pF Chip Capacitors ATC100B101JT500XT ATC
C22 10 F Chip Capacitor GRM55DR61H106KA88L Murata
C23 330 F, 35 V Electrolytic Capacitor MCGPR35V337M10X16-RH Multicomp
C24 1.5 pF Chip Capacitor ATC800B1R5CT500XT ATC
L1 120 nH Chip Inductor 0805CS-121X-LB CoilCraft
L2 2.55 nH, 3 Turn Inductor 0906-3JLC CoilCraft
L3 6 Turns, #22 AWG, 0.125 ID 8075 Copper Magnetic Wire Beldon
Q1 RF Power LDMOS Transistor AFT05MP075NR1 Freescale
R1 180 , 1/10 W Chip Resistor RR1220P-181-B-T5 Vishay
R2, R3 10 , 3/4 W Chip Resistors CRCW201010R0FKEF Vishay
PCB 0.030, r = 4.8 S1000-2, FR4 Shengyi

AFT05MP075NR1 AFT05MP075GNR1
RF Device Data
Freescale Semiconductor, Inc. 9
10
VSUPPLY
+
VBIAS + C19 C20 C21 C22 C23
B1
C15 C16 C17 C18

C7 L3 C9 C11
L1

C3 C5 Z20 Z22 Z24 Z26 Z28 Z30 Z32 Z34

R1

AFT05MP075NR1 AFT05MP075GNR1
Z6 Z8 Z10 Z12 Z14 Z16 Z18
RF Z3 RF
INPUT Z1 Z2 Z4 L2 Z5 Z36 Z37 Z38 Z39 OUTPUT
R2 DUT R3
C1 C14
Z7 Z9 Z11 Z13 Z15 Z17 Z19
C2 C24 C13
Z21 Z23 Z25 Z27 Z29 Z31 Z33 Z35
C4 C6

C8 C10 C12

Figure 11. AFT05MP075NR1 UHF Broadband Reference Circuit Schematic — 450--520 MHz

Table 11. AFT05MP075NR1 UHF Broadband Reference Circuit Microstrips — 450--520 MHz
Microstrip Description Microstrip Description Microstrip Description
Z1 0.250  0.052 Microstrip Z12, Z13 0.015  0.083 Microstrip Z28, Z29 0.075  0.083 Microstrip
Z2 0.059  0.064 Microstrip Z14, Z15 0.065  0.093 Microstrip Z30, Z31 0.030  0.083 Microstrip
Z3 0.060  0.050 Microstrip Z16, Z17 0.050  0.093 Microstrip Z32*, Z33* 0.108  0.073 Microstrip
Z4 0.054  0.064 Microstrip Z18, Z19 0.110  0.170 Microstrip Z34*, Z35* 0.109  0.073 Microstrip
Z5 0.200  0.054 Microstrip Z20, Z21 0.110  0.170 Microstrip Z36 0.177  0.054 Microstrip
Z6*, Z7* 0.195  0.073 Microstrip Z22, Z23 0.050  0.093 Microstrip Z37 0.470  0.054 Microstrip
Z8, Z9 0.035  0.083 Microstrip Z24, Z25 0.017  0.093 Microstrip Z38 0.130  0.054 Microstrip
Z10, Z11 0.055  0.083 Microstrip Z26, Z27 0.048  0.093 Microstrip Z39 0.200  0.054 Microstrip

* Line length includes microstrip bends

Freescale Semiconductor, Inc.

RF Device Data
 TYPICAL CHARACTERISTICS — 450--520 MHz UHF BROADBAND
REFERENCE CIRCUIT

17 74

16.5 72

EFFICIENCY (%)
D

D, DRAIN
16 70

Gps, POWER GAIN (dB)

15.5 68
Gps
15 66

14.5 100

POWER (WATTS)
Pout, OUTPUT
14 90
Pout
13.5 VDD = 13.6 Vdc, Pin = 3 W 80
IDQ(A+B) = 500 mA
13 70
440 450 460 470 480 490 500 510 520 530
f, FREQUENCY (MHz)
Figure 12. Power Gain, Drain Efficiency and Output Power versus
Frequency at a Constant Input Power — 13.6 V

17 74

16.5 D 72

EFFICIENCY (%)
D, DRAIN
16 70
Gps, POWER GAIN (dB)

15.5 68
VDD = 12.5 Vdc, Pin = 3 W
15 IDQ(A+B) = 500 mA 66

14.5 Gps 100

POWER (WATTS)
Pout, OUTPUT
14 90
Pout
13.5 80
13 70
440 450 460 470 480 490 500 510 520 530
f, FREQUENCY (MHz)
Figure 13. Power Gain, Drain Efficiency and Output Power versus
Frequency at a Constant Input Power — 12.5 V

AFT05MP075NR1 AFT05MP075GNR1
RF Device Data
Freescale Semiconductor, Inc. 11
 TYPICAL CHARACTERISTICS — 450--520 MHz UHF BROADBAND
REFERENCE CIRCUIT

140
f = 485 MHz VDD = 13.6 Vdc, Pin = 3 W
90
120 VDD = 13.6 Vdc, Pin = 1.5 W f = 485 MHz VDD = 13.6 Vdc
80

Pout, OUTPUT POWER (WATTS)

Pin = 3 W
Pout, OUTPUT POWER (WATTS)

VDD = 12.5 Vdc, Pin = 3 W

100 70
VDD = 12.5 Vdc
60 Pin = 3 W
80 VDD = 12.5 Vdc 50
Pin = 1.5 W VDD = 13.6 Vdc
40
60 Pin = 1.5 W
Detail A 30
20 VDD = 12.5 Vdc
40
Pin = 1.5 W
10
20
0
0 0.5 1 1.5 2 2.5 3 3.5
0
0 1 2 3 4 5 VGS, GATE--SOURCE VOLTAGE (VOLTS)
VGS, GATE--SOURCE VOLTAGE (VOLTS) Detail A
Figure 14. Output Power versus Gate--Source Voltage

19 120
VDD = 12.5 Vdc, IDQ(A+B) = 500 mA
450 MHz
18 520 MHz 100
520 MHz

Pout, OUTPUT POWER (WATTS)

485 MHz

D, DRAIN EFFICIENCY (%)

Gps 485 MHz
Gps, POWER GAIN (dB)

17 80

485 MHz
16 60
450 MHz 450 MHz
520 MHz
15 40
D
14 20
Pout
13 0
0.05 0.1 1 5
Pin, INPUT POWER (WATTS)
Figure 15. Power Gain, Output Power and Drain
Efficiency versus Input Power and Frequency

AFT05MP075NR1 AFT05MP075GNR1
RF Device Data
12 Freescale Semiconductor, Inc.
 450--520 MHz UHF BROADBAND REFERENCE CIRCUIT

Zo = 2 

f = 530 MHz
Zsource

f = 450 MHz
f = 530 MHz

f = 450 MHz Zload

VDD = 12.5 Vdc, IDQ(A+B) = 500 mA, Pout = 75 W

f Zsource Zload
MHz  
450 0.55 + j0.59 0.75 + j0.30
460 0.72 + j0.81 0.82 + j0.39
470 0.79 + j0.93 0.90 + j0.42
480 0.71 + j0.86 0.92 + j0.44
490 0.62 + j0.78 0.93 + j0.41
500 0.60 + j0.74 0.89 + j0.39
510 0.64 + j0.72 0.85 + j0.39
520 0.69 + j0.78 0.79 + j0.39
530 0.70 + j1.03 0.74 + j0.43
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.

Input Device Output

Matching Under Matching
Network Test Network
50  50 

Zsource Zload

Figure 16. UHF Broadband Series Equivalent Source and Load Impedance — 450--520 MHz

AFT05MP075NR1 AFT05MP075GNR1
RF Device Data
Freescale Semiconductor, Inc. 13
 PACKAGE DIMENSIONS

AFT05MP075NR1 AFT05MP075GNR1
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14 Freescale Semiconductor, Inc.
 AFT05MP075NR1 AFT05MP075GNR1
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AFT05MP075NR1 AFT05MP075GNR1
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AFT05MP075NR1 AFT05MP075GNR1
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18 Freescale Semiconductor, Inc.
 AFT05MP075NR1 AFT05MP075GNR1
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Freescale Semiconductor, Inc. 19
 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS

Refer to the following resources to aid your design process.

Application Notes
 AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
 AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
 .s2p File
Development Tools
 Printed Circuit Boards

For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

0 Feb. 2013  Initial Release of Data Sheet

1 Aug. 2014  Tape and Reel information: corrected tape width information from 32--inch reel to 44--inch reel to reflect
actual reel size, p. 1
 Replaced case outline TO--270WB--4, Issue D with Issue E, pp. 14–16. Added notes 9 and 10, four
exposed source tabs, and a feature control frame to E and E5 on p. 14. Removed style and pin information
from notes section on p. 16.

AFT05MP075NR1 AFT05MP075GNR1
RF Device Data
20 Freescale Semiconductor, Inc.
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AFT05MP075NR1 AFT05MP075GNR1
RF Device
Document Data
Number: AFT05MP075N
Rev. 1,Freescale
8/2014 Semiconductor, Inc. 21