DISCRETE SEMICONDUCTORS

DATA SHEET

dbook, halfpage

M3D088

PMBT4401
NPN switching transistor
Product data sheet 2004 Jan 21
Supersedes data of 1999 Apr 15
NXP Semiconductors Product data sheet

NPN switching transistor PMBT4401

FEATURES PINNING
• High current (max. 600 mA) PIN DESCRIPTION
• Low voltage (max. 40 V). 1 base
2 emitter
APPLICATIONS 3 collector
• Industrial and consumer switching applications.

DESCRIPTION
handbook, halfpage
NPN switching transistor in a SOT23 plastic package. 3
3
PNP complement: PMBT4403.

1
MARKING

TYPE NUMBER MARKING CODE(1) 2

1 2
PMBT4401 *2X
Top view MAM255
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol.
* = W : Made in China.

ORDERING INFORMATION

TYPE PACKAGE
NUMBER NAME DESCRIPTION VERSION
PMBT4401 − plastic surface mounted package; 3 leads SOT23

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 60 V
VCEO collector-emitter voltage open base − 40 V
VEBO emitter-base voltage open collector − 6 V
IC collector current (DC) − 600 mA
ICM peak collector current − 800 mA
IBM peak base current − 200 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 250 mW
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C
Tamb operating ambient temperature −65 +150 °C

Note
1. Transistor mounted on an FR4 printed-circuit board.

2004 Jan 21 2
NXP Semiconductors Product data sheet

NPN switching transistor PMBT4401

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth (j-a) thermal resistance from junction to ambient note 1 500 K/W

Note
1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector-base cut-off current IE = 0; VCB = 60 V − 50 nA
IEBO emitter-base cut-off current IC = 0; VEB = 6 V − 50 nA
hFE DC current gain VCE = 1 V; (see Fig.2)
IC = 0.1 mA 20 −
IC = 1 mA 40 −
IC = 10 mA 80 −
IC = 150 mA; note 1 100 300
IC = 500 mA; VCE = 2 V; note 1 40 −
VCEsat collector-emitter saturation IC = 150 mA; IB = 15 mA; note 1 − 400 mV
voltage IC = 500 mA; IB = 50 mA; note 1 − 750 mV
VBEsat base-emitter saturation voltage IC = 150 mA; IB = 15 mA; note 1 − 950 mV
IC = 500 mA; IB = 50 mA; note 1 − 1.2 V
Cc collector capacitance IE = Ie = 0; VCB = 5 V; f = 1 MHz − 8 pF
Ce emitter capacitance IC = Ic = 0; VEB = 500 mV; f = 1 MHz − 30 pF
fT transition frequency IC = 20 mA; VCE = 10 V; f = 100 MHz 250 − MHz
Switching times (between 10% and 90% levels); (see Fig.3)
ton turn-on time ICon = 150 mA; IBon = 15 mA; − 35 ns
td delay time IBoff = −15 mA − 15 ns
tr rise time − 20 ns
toff turn-off time − 250 ns
ts storage time − 200 ns
tf fall time − 60 ns

Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

2004 Jan 21 3
NXP Semiconductors Product data sheet

NPN switching transistor PMBT4401

MGD811
300
handbook, full pagewidth

hFE

VCE = 1 V
200

100

0
10−1 1 10 102 103
IC mA

Fig.2 DC current gain; typical values.

handbook, full pagewidth VBB VCC

RB RC
(probe) Vo (probe)
oscilloscope oscilloscope
450 Ω 450 Ω
R2
Vi DUT

R1

MLB826

Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.

R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.
VBB = −3.5 V; VCC = 29.5 V.
Oscilloscope: input impedance Zi = 50 Ω.

Fig.3 Test circuit for switching times.

2004 Jan 21 4
NXP Semiconductors Product data sheet

NPN switching transistor PMBT4401

PACKAGE OUTLINE

Plastic surface-mounted package; 3 leads SOT23

D B E A X

HE v M A

A1

1 2 c

e1 bp w M B Lp

e
detail X

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A1
UNIT A bp c D E e e1 HE Lp Q v w
max.
1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55
mm 0.1 1.9 0.95 0.2 0.1
0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC JEITA PROJECTION

04-11-04
SOT23 TO-236AB
06-03-16

2004 Jan 21 5
NXP Semiconductors Product data sheet

NPN switching transistor PMBT4401

DATA SHEET STATUS

DOCUMENT PRODUCT
DEFINITION
STATUS(1) STATUS(2)
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.

Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.

DISCLAIMERS above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for
General ⎯ Information in this document is believed to be
extended periods may affect device reliability.
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Quick reference data ⎯ The Quick reference data is an
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extract of the product data given in the Limiting values and
Applications ⎯ Applications that are described herein for Characteristics sections of this document, and as such is
any of these products are for illustrative purposes only. not complete, exhaustive or legally binding.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions

2004 Jan 21 6
 NXP Semiconductors

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.

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Printed in The Netherlands R75/04/pp7 Date of release: 2004 Jan 21 Document order number: 9397 750 12462