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    BJT - Tutorial 1 - Page 1-2: (Ma) 8 90 A 80 A 70 A 60 A 50 A 40 A 30 A

    Uploaded by

    Christian Calma
    1. The document provides characteristics graphs for a BJT transistor and asks the reader to analyze the graphs and calculate various transistor parameters and operating points. It asks the reader to determine values like collector current, base-emitter voltage, collector-emitter voltage, DC current gain, and maximum power dissipation from the provided graphs and specifications.

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    BJT - Tutorial 1 - Page 1-2: (Ma) 8 90 A 80 A 70 A 60 A 50 A 40 A 30 A

    Uploaded by

    Christian Calma
    21 views2 pages
    1. The document provides characteristics graphs for a BJT transistor and asks the reader to analyze the graphs and calculate various transistor parameters and operating points. It asks the reader to determine values like collector current, base-emitter voltage, collector-emitter voltage, DC current gain, and maximum power dissipation from the provided graphs and specifications.

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    1. The document provides characteristics graphs for a BJT transistor and asks the reader to analyze the graphs and calculate various transistor parameters and operating points. It asks the reader to determine values like collector current, base-emitter voltage, collector-emitter voltage, DC current gain, and maximum power dissipation from the provided graphs and specifications.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    21 views2 pages

    BJT - Tutorial 1 - Page 1-2: (Ma) 8 90 A 80 A 70 A 60 A 50 A 40 A 30 A

    Uploaded by

    Christian Calma
    1. The document provides characteristics graphs for a BJT transistor and asks the reader to analyze the graphs and calculate various transistor parameters and operating points. It asks the reader to determine values like collector current, base-emitter voltage, collector-emitter voltage, DC current gain, and maximum power dissipation from the provided graphs and specifications.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    BJT - TUTORIAL 1 - PAGE 1-2

    IC (mA)
    8

    90 µA
    7 80 µA
    70 µA I B (µA)
    6 VCE = 1 V
    60 µA VCE = 10 V
    100
    (Saturation region) 5 50 µA VCE = 20 V
    90
    40 µA 80
    4 70
    30 µA
    60
    3
    (Active region) 50
    20 µA
    2 40
    30
    10 µA
    1 20

    I B = 0 µA 10

    0 5 10 15 20 VCE (V) 0 0.2 0.4 0.6 0.8 1.0 VBE (V)


    VCEsat
    (Cutoff region)
    ~ β I CBO
    I CEO =

    (a) (b)
    Figure 3.14 Characteristics of a silicon transistor in the common-emitter config-
    uration: (a) collector characteristics; (b) base characteristics.

    1. Using the characteristics of Fig. 3.14:


    (a) Find the value of IC corresponding to VBE   750 mV and VCE   5
    V . (b) Find the value of VCE and VBE corresponding to IC  3 mA and IB  30
    A.
    2. (a) For the common-emitter characteristics of Fig. 3.14, find the dc beta at an operating
    pointof VCE  8 V and IC  2 mA.
    (b) Find the value of  corresponding to this operating point.
    (c) At VCE  8 V, find the corresponding value of ICEO.
    (d) Calculate the approximate value of ICBO using the dc beta value obtained in part (a).
    3. (a) Using the characteristics of Fig. 3.14a, determine ICEO at VCE  10
    V.(b) Determine dc at IB  10 A and VCE  10 V.
    (c) Using the dc determined in part (b), calculate ICBO.
    4. (a) Using the characteristics of Fig. 3.14a, determine dc at IB  80 A and VCE  5 V.
    (b) Repeat part (a) at IB  5 A and VCE  15 V.
    (c) Repeat part (a) at IB  30 A and VCE  10 V.
    (d) Reviewing the results of parts (a) through (c), does the value of dc change from point
    to point on the characteristics? Where were the higher values found? Can you develop any
    general conclusions about the value of
    dc on a set of characteristics such as those pro-
    vided in Fig. 3.14a?
    BJT-TUTORIAL 1 - PAGE 2-2

    * 5. (a) Using the characteristics of Fig. 3.14a, determine ac at IB  80 A and VCE  5 V.


    (b) Repeat part (a) at IB  5 A and VCE  15 V.
    (c) Repeat part (a) at IB  30 A and VCE  10 V.
    (d) Reviewing the results of parts (a) through (c), does the value of ac change from
    point to point on the characteristics? Where are the high values located? Can you develop any gen-
    eral conclusions about the value of
    ac on a set of collector characteristics?

    6. Using the characteristics of Fig. 3.14a, determine dc at IB  25 A and VCE  10 V. Then cal-
    culate dc and the resulting level of IE. (Use the level of IC determined by IC  dcIB.)

    7. (a) Given that dc  0.987, determine the corresponding value of dc.
    (b) Given dc  120, determine the corresponding value of .
    (c) Given that dc  180 and IC  2.0 mA, find IE and IB.

    8. If the emitter current of a transistor is 8 mA and IB is 1/100 of IC, determine the levels
    of IC and IB.

    9. Determine the region of operation for a transistor having the characteristics of Fig. 3.14 if
    ICmax  7 mA, VCEmax  17 V, and PCmax  40 mW.

    10. (a) Given an dc of 0.998, determine IC if IE  4 mA.

    (b) Determine dc if IE  2.8 mA and IB  20 A.


    (c) Find IE if IB  40 A and dc is 0.98.

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