School of Information Technology, Engineering,

Mathematics and Physics

EE212: Analog Electronics I

Lab Title: DC Biasing and Operation of a BJT

Amplifier

Lab #: 5

Group Members:

Luke Naisuludriu (S11197854)

Anesh Aman Dewan – S11184100

Semesa Nawasoni – S11199422

AIM:

The objective of this experiment is to;

 Determine and compare the respective measured and calculated voltage and current
parameters of a common-emitter amplifier with voltage divider bias.

 Obtain the current and voltage of a common-emitter amplifier.

 Determine the phase shift of the wave.

 Calculate the power gain, current and voltage of a common-emitter amplifier.

 Study BJT when utilized as a switch.

 INTRODUCTION

A bipolar junction transistor (BJT) is made up of semiconductors of n type and p type that are
joined together forming a junction that enables magnification and amplification and is a
current controlled electrical device [1]. To function as an amplifier, the input signal or the
amplitude of the bjt is linearly proportional and this is a significant property of transistors. A
BJT exhibits current gain denoted by β, beta. This amplification process works when it is
biased in the active region. This results in the Base and Emitter junction to have very little
resistance allowing an amplified output. This is due to the forward biasing of the BC junction
and reverse biasing in the BE junction [2].

Figure 1 Forward biasing and reverse biasing of a NPN and PNP transistor

Figure 1 reveals the forward biasing and reverse biasing of a npn and pnp circuit setup.
Most common amplifier is the common emitter amplifier which the input and output signals
share a common connection to the emitter. The amplified signal is due to the current that
flows through the load[3].

Figure 2 BJT Amplifier Circuit.

This output can be seen as AC waves in an oscilloscope. The input signal is determined to be
capacitively coupled to the terminal of the base wherein the output signal is coupled from the
collector to the load. Coupling the wave formed will result in the wave being 180 o out of
phase from each other due to the input signal is applied to the base and the output is obtained
from the collector and the emitter being used by both the input and output signal.

INSTRUMENTS:

 Power Supply

 Oscilloscope

 Multimeter

 Signal Generator

 Resistors of values: 1×68kΩ, 1×18kΩ, 1×3.9kΩ, and 1×1kΩ

 2×Resistors with values that was calculated in Part III.

 Capacitors of values: 2×10μF and 1×0.001μF

 1× Red LED

 1× BC548 NPN BJT

 METHOD

The purpose of the experiment in Part 1 was to examine the voltage divider bias
characteristics of a BJT that was linked in a circuit with one NPN, two resistors, and a
common emitter bias. (BC548). First, using the provided apparatus, the equipment was
examined, and then the circuit was constructed. After the circuit was constructed, the
voltmeter was used to measure the current at the base, collector, and emitter as well as the DC
voltages at these locations. After measuring the voltages, formulas were used to determine the
voltage and current values, which were then compared in tabulated form.

In the second part of the experiment, a small signal operation of a bjt common-emitter
amplifier was carried out. After the circuit was configured, the signal generator was used to
supply voltages to the circuit. The voltage was then modified using the CRO and set to 50
mV peak to peak, at 10 kHz. The twisted sin wave was transformed into a regular sin graph
using the CRO. The peak to peak voltage was recorded and presented on the oscilloscope
after the undistorted wave was set. Since the peak to peak voltage was set, the out voltage and
voltage in were also measured. After calculating the measured values, the voltage gain at the
amplifier were calculated and the phase shift value was determined.

Part 3 of the experiment requires us to build a bjt transistor to function as a switch. After the
setup were configured respectively, appropriate formulas were utilized to determine, the
values of the base resistor, collector resistor, and emitter resistor, and the corresponding
values of resistor were then added to the circuit. Then 10 volts peak to peak was applied to
the circuit's input terminal, and the frequency was used to determine the voltage at which the
LED shines the strongest.
 RESULTS
Part 1: Voltage Divider Bias of a common-Emitter Amplifier

( )
R2 V E V E−V BE V C =V CC−I C R C
V B= V I E= =
R1 + R2 CC RE RE
¿ 9 V −(1.18 mA )(3.9 k )
1.88V −0.7 V
¿ ( 18 k
68 k +18 k )
×9 ¿
1k
V C =4.398 V

I E =I C =1.18 mA
V B=1.88 V
V E=V B−V BE I C 1.18
I B= =
β DC 110 Table 1
¿ 1.88 V −0.7 V
Measured
V E=1.18 V I B=10.73 μA
and Calculated
Values

DC Parameters Measured Value Calculated Values

Ib 9.56 μA 10.74 μA
Ic 1.1742mA 1.18mA
Ie 1.1785mA 1.18mA
Vb 1.7985V 1.88V
Vc 4.3678V 4.398V
Ve 1.1798V 1.18V
Part II: Small Signal Operation of a BJT Common-Emitter Amplifier

Figure 3 Waveform as seen through the oscilloscope.

Figure 1 above shows the wave that is formed in the oscillator, whereby voltage in the system
(Vin) is represented by the blue waveform and the voltage output (Vout) being represented by
the yellow waveform. The peak yo peak voltage Vpp (Vin) was measured to be 84mV at
10kHz whereby the output was measured to be 3.6V, which in this case is the amplified
output.
Vpp(IN) : 84mV
Vpp(OUT) : 3.5V
IIN = 55.53μA
I(OUT) = 97.34μA
Phase shift 179.3o

V PP (OUT ) I (OUT ) A p =A v × Ai IC
AV = Ai = β DC =
V PP (¿) I (¿) ¿( 42)( 1.75) IB
3.5 V 97.34 μA A p =73.5
¿ ¿ 1.18 mA
84 mV 55.53 μA ¿
AV =42 Ai=1.75 10.7 4 μA
β DC =109.9 8
PART III: Application of BJT as a switch

Figure 4 Circuit Setup

Figure 2 shows the circuit setup of a switch from the applications of BJT. The circuit was
made to determine at which frequency the LED is triggered to turn on. In this setup the LED
light up when the frequency reads 0.1Hz.

DISCUSSION

In the first part of the experiment the respective parameter of a common emitter amplifier
was determined. This involves utilizing a multimeter for measuring the terminals of the
transistor with the respective components to determine the base voltage Vb, collector voltage
Vc and emitter voltage VE, and it’s respective current. These measured values were
comparable to that of the calculated values. For example, the measured collector current was
determined to be 1.1742mA and the calculated values were determined to be 1.18mA.

In the second part of the experiment, using the CRO the input signal and the output signal
was generated and analyzed. The output signal is found to be coupled from the collector to
the load while the input signal is found to be capacitively coupled to the base's end. Due to
the input signal being applied to the base, the output signal being acquired from the collector,
and both the input and output signal being used by the emitter, coupling the wave will result
in the wave being 179.3o out of phase from each other. The current gain was determined to be
1,75, whereas the voltage and power gain was determined to be 42 and 73.5 respectively.

Part 3 of the experiment requires us to determine the frequency at which the LED shines the
brightest. It was determined that 0.1Hz the LED shines the brightest in which indicates a
maximum current in the circuit which is known as saturation.
 CONCLUSION
In conclusion, the objective of the experiment was obtained. The respective parameters of a
BJT amplifier was measured and when compared to the calculated values it was comparable
to each other. Then when the amplifier circuit was displayed on the CRO, further analysis
were carried out respectively such as the current gain, voltage gain and power gain. It was
evident that biasing of the transistor was an essential operation in obtained the amplified
output. It was also proven that bjt transistors can be utilized as switches, which was possible
only when saturation occurs.
References
[1] M. V. Sai, “Bipolar Junction Transistor: Definition, Construction, Types, Function, Application,
and FAQs,” BYJUS, Jul. 18, 2021. https://byjus.com/physics/bipolar-junction-transistor/ (accessed Apr.
02, 2023).

[2] T. L. Floyd, Electronic devices: electron flow version, 9th ed. Boston: Prentice Hall, 2012.

[3] “The Common-emitter Amplifier | Bipolar Junction Transistors | Electronics Textbook.”

https://www.allaboutcircuits.com/textbook/semiconductors/chpt-4/common-emitter-amplifier/
(accessed Apr. 02, 2023).