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2018 ECE Annex V - Sample Course Specification For Electronic Devices and Circuit Lecture

The course syllabus describes an Electronics Engineering course on Electronic Devices and Circuits. The 3 unit course introduces concepts of quantum mechanics, semiconductor characteristics, diode and transistor models and applications. Key topics include diode and transistor biasing, small and large signal analysis, and Boolean logic. The course outcomes involve explaining semiconductor and device concepts, analyzing circuits using diodes and transistors, and discussing applications of diodes, BJT and FET transistors. The course outline covers semiconductor theory, diode circuits, transistor biasing and analysis for BJT and FET devices.

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Janice Puspos
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0% found this document useful (0 votes)
20 views

2018 ECE Annex V - Sample Course Specification For Electronic Devices and Circuit Lecture

The course syllabus describes an Electronics Engineering course on Electronic Devices and Circuits. The 3 unit course introduces concepts of quantum mechanics, semiconductor characteristics, diode and transistor models and applications. Key topics include diode and transistor biasing, small and large signal analysis, and Boolean logic. The course outcomes involve explaining semiconductor and device concepts, analyzing circuits using diodes and transistors, and discussing applications of diodes, BJT and FET transistors. The course outline covers semiconductor theory, diode circuits, transistor biasing and analysis for BJT and FET devices.

Uploaded by

Janice Puspos
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Annex V – SAMPLE COURSE SYLLABUS

BS ELECTRONICS ENGINEERING

Course Name: ELECTRONIC DEVICES AND CIRCUITS (LECTURE)


Introduction to quantum mechanics of solid state electronics; diode
and transistor characteristics and models (BJT and FET); diode
Course circuit analysis and applications; transistor biasing; small signal
Description analysis; large signal analysis; transistor amplifiers; Boolean logic;
transistor switch.

Number of Units 3 units


Number of Contact
Hours per week 3 hours

Prerequisite Physics 2; Integral Calculus


Upon completion of the course, the student must be able to:
1. Explain the basic concept of atomic theory and relate it to the
characteristics of materials (POa, POe, POi)
2. Discuss the construction, basic operation, characteristics and
configurations of semiconductor diodes (POa, POb, POe, POi)
3. Analyze the function of semiconductor diode in some practical
applications (POa, POb, POe, POi)
Course Outcomes 4. Discuss the basic structure, operation and characteristics of Bipolar
Junction Transistors (BJT) (POa, POb, POe, POi)
5. Discuss the different configurations, DC Biasing and some practical
applications of BJT (POa, POb, POe, POi)
6. Discuss the basic structure, operation and characteristics of Field
Effect Transistors (FET) (POa, POb, POe, POi)
7. Discuss the different configurations, DC Biasing and some practical
applications of FET (POa, POb, POe, POi)
1. Introduction of Semiconductors
 Discuss the concept of atomic theory, and the subatomic particles of the
atom. (CO1)
 Identify and differentiate conductors, semiconductors and insulators. (CO1)
 Discuss the crystal structure of the common semiconductor materials and
ions formed from covalent bonding. (CO1)
 Explain the general characteristics of three important semiconductor
materials: Ge, Si and GaAs. (CO2)
 Explain the concept of conduction in semiconductors using electron and
hole theory. (CO2)
 Differentiate the difference between n – type and p – type materials. (CO2)

2. Diode Equivalent Circuits


 Explain what happens in a diode during no bias, forward bias, and reverse
bias conditions. (CO2)
 Identify the three equivalent model of the diode and plot its corresponding
characteristic curves. (CO2)
 Calculate current and voltage for circuits with diode connected in series,
parallel or series–parallel using the different equivalent diode models.
(CO2)
 Explain the diagram of a basic power supply and determine the waveform
produced by each block. (CO3)

3. Wave Shaping Circuits


Course  Explain the process of rectification using diodes to establish a pulsating dc
Outline from a sinusoid ac input. (CO3)
 Calculate and determine the output waveform of half-wave and full-wave
rectified signal. (CO3)
 Calculate and determine the resulting output waveform of a bridge type,
transformer-coupled and center-tapped transformer rectifier. (CO3)
 Design a clipper circuit given an output and an input. (CO3)
 Analyze the output response of a clipper circuit. (CO3)
 Design a clamper circuit given an output and an input. (CO3)
 Analyze the output response of a clamper circuit. (CO3)
4. Special Diode Application
 Interpret the characteristic curves of a zener diode. (CO2)
 Draw the equivalent circuit of a zener diode. (CO2)
 Explain how a zener diode produces a constant level of dc voltage during
reverse bias condition. (CO2)
 Solve circuits with zener diodes. (CO2)
 Discuss the basic characteristics and operation of LED’s, photodiodes,
Schottky, varactor, pin, step recovery, tunnel, and laser diodes. (CO2)
5. Power Supply And Voltage Regulation
 Discuss how a voltage input is amplified with the use of capacitors and
diodes. (CO3)
 Compute the ripple voltage produced by filtering a rectified output with the
use of a capacitor. (CO3)
 Discuss how a ripple is produced. (CO3)
6. Bipolar Junction Transistor
 Describe the basic structure of the BJT.
 Explain how a BJT is biased and discuss the transistor currents and their
relationships. (CO4)
 Discuss transistor parameters and characteristics and use this to analyze a
transistor circuit. (CO4)
 Identify and differentiate the schematic symbol and construction of an npn
and pnp transistor. (CO4)
 Discuss how a transistor amplifies an input voltage/ current. (CO5)
 Discuss the operation of a transistor in cut-off and saturation region. (CO4)
 Discuss the operation of a transistor in common configuration: common
base, common collector, and common emitter. (CO5)
 Measure the important voltage levels of a BJT configuration and use them
to determine whether the network is operating properly. (CO4)
 Analyze the saturation and cut-off conditions of a BJT network and the
expected voltage and current levels established by each condition. (CO4)
 Apply proper biasing of a transistor to ensure proper operation in the active
region. (CO5)
 Perform dc analysis of BJT using different biasing configurations. (CO5)

7. Small- Signal Analysis (BJT)


 Use BJT in an application where its amplification and switching
capabilities are used. (CO5)

8. Field Effect Transistor


 Describe the basic structure of the JFET. (CO6)
 Explain how a JFET is biased and discuss the transistor currents and
their relationships. (CO6)
 Discuss transistor parameters and characteristics and use this to analyze
a transistor circuit. (CO6)
 Identify and differentiate the schematic symbol and construction of a p –
channel and an n- channel JFET. (CO6)
 Sketch the transfer characteristics from drain characteristics of a JFET.
(CO6)
 Discuss the characteristics and operation of a D-MOSFET. (CO6)
 Discuss the characteristics and operation of an E-MOSFET. (CO6)
 Discuss the differences between the dc analyses of the various types of
FET’s. (CO7)
 Apply proper biasing of a FET to ensure proper operation in the desired
region. (CO7)
 Perform dc analysis of JFET, MOSFET, and MESFET using different
biasing configurations. (CO7)
9. Small-Signal and Large Analysis (FET)
 Solve combination of FET’s in a single network (CO7)
 Use JFET in an application where its transfer characteristics are used.
(CO7)

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