Electronics

Condura®.prime
Active Metal Brazed (AMB) Si3N4 Substrates DPIS(1)

AMB-Si3N4 Substrate facts

■ Silicon nitride ceramic TSN-90-F
Thicknesses: 0.25 mm/ 0.32 mm

■ Active Metal Brazed Cu-OFC (99.96 %)

Thicknesses(2): 0.30 mm/ 0.40mm/ 0.50 mm/   0.80 mm

■ Asymmetric brazing is possible up to 0.60 mm Cu

thickness and a max. thickness difference of 0.10 mm

■ Single unit or master card

■ Surface finish: Ag optimized for silver sintering,

Ni or NiAu, bare Cu
selective (partial) plating possible

Key features Main properties of Si3N4 TSN-90-F

■ Best in class reliability

Rating Unit
■ Enables thick Cu layers (e.g. 0.8 mm)
■ Thinner ceramics vs. AIN possible for equal thermal Bending strength σ0 > 650 MPa
resistance
1/2
■ Thermal conductivity > 80 W/m.K of Si3N4 ceramic Fracture toughness 6-7 MPa∙m

Thermal conductivity (@ 20 °C) ≥ 80 W/m∙K

Special features Coefficient of thermal expansion

2.6 10-6/K
(20 °C - 500 °C)
■ Best quality functional surfaces, e.g. Ag finish
Young’s modulus (@ 20 °C) > 280 GPa
optimized for silver sintering technology
■ Pre-applied sinter(3) / solder Dielectric strength (@ 50 Hz) 15 kV/mm
■ Rimless Ag plating for more efficient and reliable
surface area for bonding Volume resistivity (@ 20 °C) > 1012 Ω∙m
■ Special surface treatment to increase die shear
strength

(1) Development Product Information Sheet, preliminary values 1

(2) Different material combinations on request
(3) Under development
 Condura®.prime
Design Rules AMB-Si3N4 DPIS(1)
Metal free distance

Thickness Cu Min. metal free distance

metal free distance
Cu free area d [mm] [mm]
0.30 +/- 0.30
0.40 +/- 0.40
d
0.50 +/- 0.40
0.80 +/- 0.40

Structuring

Thickness Cu Min. metal free Min. line Min. pitch

pitch
d [mm] distance [mm] [mm]
metal free distance [mm]
space
d 0.30 0.50 0.50 1.00
0.40 0.70 0.70 1.40

line 0.50 0.70 0.70 1.40

0.80 1.00 1.00 2.00

Structuring tolerance

Thickness Cu Tolerance of structuring

d [mm] dimensions
x, y [mm]
0.30 ± 0.20
0.40 ± 0.30
0.50 ± 0.30
0.80 ± 0.40

Sidewall of structured pattern + protruding length

Thickness Cu D = sidewall of structured pattern (s)

d [mm] + protruding length (p*) [mm]
0.30 - 0.80 ≤ ½ ∙ d

(1) Development Product Information Sheet, preliminary values

*Typical protruding length p < 50 µm on each flank 2

2
 Condura®.prime

Design Rules AMB-Si3N4 DPIS(1)

Mastercard / Single unit dimension & tolerances

Mastercard usable area 167mm ∙ 127 mm

Single unit dimension* ≥ 15 mm ∙ 15 mm
Tolerances +0.2 / -0.05 mm
*Smaller dimensions on request

Thickness tolerances

Copper thickness (per each Cu-layer) 0.3 mm 0.4 mm 0.8 mm

Copper thickness tolerance (per each Cu-layer) +10 / -30 μm +10 / -30 μm +55 / -55 μm

Ceramic thickness tolerance ± 50 μm

Total thickness (Cu+Si3N4+Cu) tolerance ± 10 %

Warpage behavior depends on specific layout, single unit size and material combination and can only be specified after initial sample preparation.

Thickness combinations

Si3N4 Cu Thickness* (mm)

Thickness (mm)
0.3 0.4 0.5 0.8
0.32 √ √ √ √
0.25 √ √ √
*Others on request

Surface plating

Plating Thickness (µm)

Ag (immersion silver) typically 0.3
Electroless Ni 3 - 7 (9% ± 2% P)
Immersion Au (ENIG, Au Class 1) 0.01 - 0.05
Immersion Au (ENIG, Au Class 2) 0.03 - 0.13

(1) Development Product Information Sheet, preliminary values

3

3
Condura®.prime
Design Rules AMB-Si3N4 DPIS(1)
Metal properties

HET Academy
Surface roughness* Copper peeling strength
R&D Application Center
Ra < 1.5 μm, Rz < 16 μm > 9.8 N/mm

*Lower roughness on request

Besides offering Assembly Materials,
Bonding Wires and Metal Ceramic
Substrates, Heraeus Electronics
Solder stop design
Customized surfaces for assembly process provides matching material solutions
and R&D oriented partnerships to
create individual solutions.
Optimization of surface and assembly process parameters available or in
development cooperation for:
Silver sintering
Solder wetting
Heavy wire bondability

12.2021, Layout: TU
Heraeus Electronics offers:
Reliable IATF 16949 certified supply of:  Condura®.prime AMB-Si3N4 (active metal brazed Si3N4)
 Condura®.extra DCB-ZTA (zirconia-toughened alumina)
 Condura®.classic  DCB-Al2O3 (direct copper bonded Al2O3)
Condura® + for example:  Engineering Services (Simulation, Prototype Design & Assembly,
Testing and Qualification, Material Analysis)
 Pre-applied sinter / solder
To be your competent one-stop materials solutions partner!

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Phone +1 610 825 6050 Phone +65 6571 7649 Phone +86 53 5815 9601 Phone +49 6181 35 4370
electronics.americas@heraeus.com electronics.apac@heraeus.com electronics.china@heraeus.com electronics.emea@heraeus.com

The descriptions and engineering data shown here have been compiled by Heraeus using commonly-accepted procedures, in conjunction with modern testing equipment, and have been compiled as according to the latest factual
knowledge in our possession. The information was up-to date on the date this document was printed (latest versions can always be supplied upon request). Although the data is considered accurate, we cannot guarantee accuracy, the
results obtained from its use, or any patent infringement resulting from its use (unless this is contractually and explicitly agreed in writing, in advance). The data is supplied on the condition that the user shall conduct tests to determine
materials suitability for a particular application. The Heraeus logo, Heraeus and Condura® are trademarks or registered trademarks of Heraeus Holding GmbH or its affiliates. All rights reserved.

(1) Development Product Information Sheet, preliminary values