Semiconductor Devices

EE 305
Chapter 3 and Chapter 4
Exercises
 Exercise 1
For silicon at T=300K, find the following:

a. The density of states in the conduction band, 𝑔𝑐 (𝐸), at an energy 26 𝑚𝑒𝑉 above 𝐸𝑐 .

b. The density of states in the valence band, 𝑔𝑉 (𝐸), at an energy 26 𝑚𝑒𝑉 below 𝐸𝑉 .

Solution:

a. The density of states in the conduction band, 𝑔𝑐 (𝐸), at an energy 26 𝑚𝑒𝑉 above 𝐸𝑐 .

𝑚𝑛∗ × 2𝑚𝑛∗ (𝐸 − 𝐸𝐶 ) =26 mev To convert

To convert from
𝑔𝐶 𝐸 = meV to eV
2 ħ3 eV to Joule

1.18 × 9.11 × 10−31 × 2 × 1.18 × 9.11 × 10−31 × 26 × 10−3 × 1.6 × 10−19

𝑔𝐶 𝐸 =
2 × 1.055 × 10−34 3
1
𝑔𝐶 𝐸 = 2.8 × 1046
𝐽. 𝑚3
Slide 1
 Exercise 1
Solution:

b. The density of states in the valence band, 𝑔𝑉 (𝐸), at an energy 26 𝑚𝑒𝑉 below 𝐸𝑉 .

𝑚𝑝∗ × 2𝑚𝑝∗ (𝐸𝑉 − 𝐸)

𝑔𝑉 𝐸 =
2 ħ3

0.8 × 9.11 × 10−31 × 2 × 0.8 × 9.11 × 10−31 × 26 × 10−3 × 1.6 × 10−19

𝑔𝑉 𝐸 =
2 × 1.055 × 10−34 3
1
𝑔𝑉 𝐸 = 1.985 × 1046
𝐽. 𝑚3

Slide 2
 Exercise 2
a. If 𝐸𝐹 = 𝐸𝑐 , find the probability of a state being occupied at 𝐸 = 𝐸𝑐 + 𝐾𝑇.

b. If 𝐸𝐹 = 𝐸𝑉 , find the probability of a state being empty at 𝐸 = 𝐸𝑉 − 𝐾𝑇.

Solution:

a. If 𝐸𝐹 = 𝐸𝑐 , find the probability of a state being occupied at 𝐸 = 𝐸𝑐 + 𝐾𝑇.

1 If you notice:
𝐸𝐹 = 𝐸𝑐
𝐹(𝐸) = 𝐸−𝐸𝐹
The type of material is
1+ 𝑒 𝐾𝑇 𝐸 = 𝐸𝑐 + 𝐾𝑇 not mentioned and it
𝐸 − 𝐸𝐹 = 𝐸𝑐 + 𝐾𝑇 − 𝐸𝐶 = 𝐾𝑇 does not affect the
solution

1 1
𝐹 𝐸 = 𝐾𝑇 = = 0.269
1 + 𝑒1
1+ 𝑒 𝐾𝑇

Slide 3
 Exercise 2
Solution:

b. If 𝐸𝐹 = 𝐸𝑉 , find the probability of a state being empty at 𝐸 = 𝐸𝑉 − 𝐾𝑇.

1 𝐸𝐹 = 𝐸𝑉
1−𝐹 𝐸 =1− 𝐸−𝐸𝐹
1+ 𝑒 𝐾𝑇 𝐸 = 𝐸𝑉 − 𝐾𝑇
𝐸 − 𝐸𝐹 = 𝐸𝑉 − 𝐾𝑇 − 𝐸𝑉 = −𝐾𝑇

1 1
1−𝐹 𝐸 =1− −𝐾𝑇 =1− = 1 − 0.731 = 0.269
1 + 𝑒 −1
1+ 𝑒 𝐾𝑇

Please take care of signs

Slide 4
 Exercise 3
a. Determine the probability that an energy sate is occupied by an electron if the state is above the Fermi level

by 𝐾𝑇.

b. Determine the probability that an energy sate is occupied by an electron if the state is above the Fermi level

by 3𝐾𝑇.
Solution:

a. The probability that an energy sate is occupied by an electron if the state is above the Fermi level by 𝐾𝑇.

1
𝐹(𝐸) = 𝐸−𝐸𝐹
1+ 𝑒 𝐾𝑇
𝐸 = 𝐸𝐹 + 𝐾𝑇

𝐸 − 𝐸𝐹 = 𝐸𝐹 + 𝐾𝑇 − 𝐸𝐹 = 𝐾𝑇
1 1
𝐹 𝐸 = 𝐾𝑇 = = 0.269
1 + 𝑒1
Slide 5
1+ 𝑒 𝐾𝑇
 Exercise 3
Solution:

b. The probability that an energy sate is occupied by an electron if the state is above the Fermi level by 3𝐾𝑇:

1 𝐸 = 𝐸𝐹 + 3𝐾𝑇
𝐹(𝐸) = 𝐸−𝐸𝐹
1+ 𝑒 𝐾𝑇

𝐸 − 𝐸𝐹 = 𝐸𝐹 + 3𝐾𝑇 − 𝐸𝐹 = 3𝐾𝑇
1 1
𝐹 𝐸 = 3𝐾𝑇 = = 0.0474
1 + 𝑒3
1+ 𝑒 𝐾𝑇

Slide 6
 Exercise 4
Consider a silicon semiconductor at room temperature, the Fermi level is exactly located in the middle of the

bandgap

a. What is the probability that a state located at the bottom of the conduction band is filled?

b. What is the probability that a state located at the top of the valence band is empty?
Solution:

a. a state located at the bottom of the conduction band is filled: 𝐸 = 𝐸𝐶 𝐸𝑔

= 0.55 𝑒𝑉
1 𝐸𝐹 2
𝐸𝑔
Filled  𝐹(𝐸) = 𝐸−𝐸𝐹
1+𝑒 𝐾𝑇
𝐸𝑉
At the bottom of the conduction band  𝐸 = 𝐸𝐶
𝐸𝑔
Fermi level is exactly located in the middle of the bandgap 𝐸 − 𝐸𝐹 = 𝐸𝐶 − 𝐸𝐹 = 2
silicon semiconductor at room temperature 𝐸𝑔 = 1.1 𝑒𝑉  from the curve in the formula sheet

Slide 7
 Exercise 4
1.38×10−23 ×300
Energies are in 𝑒𝑉 so 𝐾𝑇 should be in in 𝑒𝑉 as well  𝐾𝑇 = = 0.0258 𝑒𝑉
1.6×10−19

1
𝐹 𝐸 = 0.55 = 5.52 × 10−10
1+ 𝑒 0.0258

b. that a state located at the top of the valence band is empty :

𝐸𝐶
1 𝐸𝐹 𝐸𝑔
Empty  1 − 𝐹 𝐸 = 1 − 𝐸−𝐸𝐹 𝐸𝑔
1+𝑒 𝐾𝑇 = 0.55 𝑒𝑉
2
𝐸 = 𝐸𝑉
At the top of the valence band  𝐸 = 𝐸𝑉
𝐸𝑔
Fermi level is exactly located in the middle of the bandgap 𝐸 − 𝐸𝐹 = 𝐸𝑉 − 𝐸𝐹 = − = −0.55
2

Why is it –ve?
1
1−𝐹 𝐸 =1− −0.55 = 5.52 × 10−10
1+ 𝑒 0.0258

Slide 8
 Exercise 5
Silicon semiconductor at T = 200 k. Given that the value of 𝑁𝐶 and 𝑁𝑉 for silicon at T = 300 k are 2.8 ×

1019 𝑐𝑚−3 and 1.4 × 1019 𝑐𝑚−3, respectively.

a. Calculate the effective density of valence band states at T = 200 k ?

b. Calculate the effective density of conduction band states at T = 200 k ?

c. Calculate the intrinsic carrier concentration in silicon at T = 200 k ?

Solution:

a. Effective density of valence band states at T = 200 k:

3 3
∗
𝑚𝑝 𝑘𝑇 2 0.8 × 9.11 × 10−31
× 1.38 × 10−23 × 200 2
𝑁𝑉 = 2 =2 = 9.76 × 1024 𝑚−3
2𝜋ħ2 2𝜋 × (1.055 × 10−34 )2

𝑁𝑉 = 9.76 × 1024 × 10−6 = 9.76 × 1018 𝑐𝑚−3

Slide 9
 Exercise 5
Solution:

b. effective density of conduction band states at T = 200 k:

3 3
∗ −31 −23
𝑚𝑛 𝑘𝑇 2 1.18 × 9.11 × 10 × 1.34 × 10 × 200 2
𝑁𝐶 = 2 =2 = 1.75 × 1025 𝑚−3
2𝜋ħ2 2𝜋 × (1.055 × 10−34 )2

𝑁𝐶 = 1.75 × 1025 × 10−6 = 1.75 × 1019 𝑐𝑚−3

c. intrinsic carrier concentration in silicon at T = 200 k :

1.15
𝐸𝑔 −
−2𝐾𝑇 2× 1.38×10−23 ×200 ൗ
𝑛𝑖 = 𝑁𝐶 𝑁𝑉 × 𝑒 = 1.75 × 1019 × 9.76 × 1018 × 𝑒 1.6×10−19

𝑛𝑖 = 4.36 × 104 𝑐𝑚−3

Slide
10
 Exercise 6
A p-type doped silicon sample is in equilibrium at 𝑁𝐴 = 1016 cm−3 and 𝑁𝐷 = 0. At 𝑇 = 700𝑘, the bandgap of

silicon is 0.99 eV.

a. Calculate the conduction and valence band effective densities of state?

b. What is the electron concentration 𝑛0 (in units of cm−3 )?

c. Calculate the Fermi level position with respect to the intrinsic level, defined as 𝐸𝐹 − 𝐸𝐹𝑖 ?

Solution:

a. Conduction and Valence band effective densities of state :

3 3
∗
𝑚𝑝 𝑘𝑇 2 0.8 × 9.11 × 10−31 × 1.38 × 10−23 × 700 2
𝑁𝑉 = 2 =2 = 6.39 × 1025 𝑚−3
2𝜋ħ2 2𝜋 × (1.055 × 10−34 )2

𝑁𝑉 = 6.39 × 1025 × 10−6 = 6.39 × 1019 𝑐𝑚−3

Slide
11
 Exercise 6
3 3
∗ −31 −23
𝑚𝑛 𝑘𝑇 2 1.18 × 9.11 × 10 × 1.38 × 10 × 700 2
𝑁𝐶 = 2 =2 = 1.15 × 1026 𝑚−3
2𝜋ħ2 2𝜋 × (1.055 × 10−34 )2

𝑁𝐶 = 1.15 × 1026 × 10−6 = 1.15 × 1020 𝑐𝑚−3

b. electron concentration 𝑛0 (in units of cm−3 ) :

2
𝑁𝐷 − 𝑁𝐴 𝑁𝐷 − 𝑁𝐴
𝑛𝑜 = + + 𝑛𝑖2
2 2
0.99
𝐸𝑔 −
− 2× 1.38×10−23 ×700 ൗ
𝑛𝑖 = 𝑁𝐶 𝑁𝑉 × 𝑒 2𝐾𝑇 = 1.15 × 1020 × 6.39 × 1019 × 𝑒 1.6×10−19 = 2.36 × 1016 𝑐𝑚−3
𝑁𝐷 = 0 and 𝑁𝐴 = 1016
2
0 − 1016 0 − 1016
𝑛𝑜 = + + 2.36 × 1016 2
2 2

𝑛𝑜 = 1.91 × 1016 𝑐𝑚−3

Slide
12
 Exercise 6
c. The Fermi level position with respect to the intrinsic level, defined as 𝐸𝐹 − 𝐸𝐹𝑖 ?

𝑛𝑜 𝑛𝑜
𝐸𝐹 = 𝐸𝑖 + 𝐾𝑇𝑙𝑛  𝐸𝐹 − 𝐸𝑖 = 𝐾𝑇𝑙𝑛
𝑛𝑖 𝑛𝑖

−23
1.91 × 1016
𝐸𝐹 − 𝐸𝑖 = 1.38 × 10 × 700 × 𝑙𝑛 16 = −2.04 × 10−21 𝐽
2.36 × 10

Notes:
𝐸𝐶
1- The result is –ve, do you why? 𝐸𝑔
Because the semiconductor is p-type, so the Fermi-level is located below the 2
𝐸𝑖 𝑜𝑟 𝐸𝐹𝑖 𝐸𝑔
intrinsic Fermi-Level. Thus, 𝐸𝐹 − 𝐸𝑖 should be –ve.
𝐸𝐹
𝐸𝑉

−2.04 × 10−21
2- How can we find 𝐸𝐹 − 𝐸𝑖 in eV? 𝐸𝐹 − 𝐸𝑖 = = −0.0128 𝑒𝑉
1.6 × 10−19
Slide
13
 Exercise 7
A n-type doped silicon sample is in equilibrium at 𝑇 = 700𝑘. At this temperature, it has an electron

concentration of 𝑛0 = 7.1 × 1016 cm−3 and an intrinsic carrier concentration of 𝑛𝑖 = 2.36 × 1016 cm−3.

a. What is the concentration of holes?

b. What is the concentration of donors,𝑁𝐷 ? (You may assume that 𝑁𝐴 = 0 and that the donors are fully

ionized.)

c. Where is the Fermi level located with respect to the intrinsic level? (A numerical answer is required)

Solution:

a. concentration of holes:
𝑛𝑖2 2.36 × 1016 2
If you think a little, you can find:
𝑝𝑜 = = = 7.84 × 1015 𝑐𝑚−3
𝑛𝑜 7.1 × 1016 𝑝𝑜 < 𝑛𝑜
Slide
14
 Exercise 7
b. The concentration of donors,𝑁𝐷 ? (You may assume that 𝑁𝐴 = 0 and that the donors are fully ionized.)

𝑝0 − 𝑛0 + 𝑁𝑑 − 𝑁𝑎 = 0

7.84 × 1015 − 7.1 × 1016 + 𝑁𝑑 − 0 = 0  𝑁𝑑 = 6.32 × 1016 𝑐𝑚−3

c. The Fermi level located with respect to the intrinsic level? (A numerical answer is required)

𝑛𝑜 𝑛𝑜
𝐸𝐹 = 𝐸𝑖 + 𝐾𝑇𝑙𝑛  𝐸𝐹 − 𝐸𝑖 = 𝐾𝑇𝑙𝑛
𝑛𝑖 𝑛𝑖

16
7.1 × 10
𝐸𝐹 − 𝐸𝑖 = 1.38 × 10−23 × 700 × 𝑙𝑛 16 = 1.064 × 10−20 𝐽
2.36 × 10

It is enough to find it in Joule 1.064 × 10−20

But, we show you here how to convert 𝐸𝐹 − 𝐸𝑖 = = 0.0665 𝑒𝑉
1.6 × 10−19
from Joule to eV in case it is required
Slide
15
 Exercise 8
The energy band diagram of silicon shows the location of a particular energy level 𝐸1 at room temperature. The

energy level 𝐸1 is located 15 𝑚𝑒𝑉 below the highest level of the valance band.

a. What is the probability that a state with energy, 𝐸 = 𝐸1 , is empty?

b. What is the type of semiconductor represented in the energy diagram?

c. Calculate the density of state at energy level 𝐸1 .

d. Calculate the number of carrier concentration at energy level 𝐸1 .

𝐸𝐶

1.05𝑒𝑉 𝐸𝑔 = 1.12𝑒𝑉
𝐸𝑖 𝑜𝑟 𝐸𝐹𝑖

𝐸𝐹
𝐸𝑉
𝐸1 0.015𝑒𝑉

Slide
16
 Exercise 8
a. The probability that a state with energy, 𝐸 = 𝐸1 , is empty:

1 𝐸𝐶
1−𝐹 𝐸 =1− 𝐸−𝐸𝐹
1+𝑒 𝐾𝑇
1.05𝑒𝑉 𝐸𝑔 = 1.12𝑒𝑉
𝐸𝑖 𝑜𝑟 𝐸𝐹𝑖
𝐸 = 𝐸1
𝐸𝐹
𝐸 − 𝐸𝐹 = 𝐸1 − 𝐸𝐹 = −0.085𝑒𝑉 1.12 − 1.05 = 0.07𝑒𝑉 𝐸𝐹 − 𝐸1 =
𝐸𝑉 0.07 + 0.015 = 0.085
0.015𝑒𝑉
𝐸1
1.38× 10−23 × 300
𝐾𝑇 = = 0.0258𝑒𝑉
1.6 × 10−19
1
1 − 𝐹 𝐸1 = 1 − −0.085 = 0.036
1+ 𝑒 0.0258

Slide
17
 Exercise 8
b. The type of semiconductor represented in the energy diagram: 𝐸𝐶

It is P-Type semiconductor. 1.05𝑒𝑉 𝐸𝑔 = 1.12𝑒𝑉

𝐸𝑖 𝑜𝑟 𝐸𝐹𝑖
Because: 𝐸𝐹 is located below 𝐸𝐹𝑖 . 𝐸𝐹
𝐸𝑉
𝐸1 0.015𝑒𝑉

c. The density of state at energy level 𝐸1 :

𝑚𝑝∗ × 2𝑚𝑝∗ (𝐸𝑉 − 𝐸1 ൯

𝑔𝑉 𝐸1 =
2 ħ3
0.8 × 9.11 × 10−31 × 2 × 0.8 × 9.11 × 10−31 × 0.015 × 1.6 × 10−19
=
2 (1.055 × 10−34 )3
45
1
𝑔𝑉 𝐸1 = 3.72 × 10
𝐽. 𝑚3
c. The number of carrier concentration at energy level 𝐸1 :
1
𝑝(𝐸1 ) = 𝑔𝑉 𝐸 × 1 − 𝐹 𝐸1 = 3.72 × 1045 × 0.036 = 1.34 × 1044
Slide
𝐽. 𝑚3
18
 Exercise 9
A substrate of silicon is doped with boron atoms (acceptor) having a concentration of 1 × 1016 cm−3 at 𝑇 =

475 K and with arsenic atoms (donors) having a concentration of 8 × 1014 cm−3 at 𝑇 = 475 K.

a. Is the material n- or p- type semiconductor?

b. Using the graph, determine the value of the intrinsic concentration 𝑛𝑖 at 𝑇 = 475 K.

c. Calculate the electron and hole concentrations.

d. Calculate the Fermi energy (𝐸𝐹 ) with respect to the intrinsic Fermi energy (𝐸𝐹𝑖 ).

The graph of 𝑛𝑖 for silicon is given in the next slide

Slide
19
 Exercise 9
The graph of 𝑛𝑖 for silicon is given in the next slide

Slide
20
 Exercise 9
Solution:

a. The material n- or p- type semiconductor:

is P-Type semiconductor because 𝑁𝐴 > 𝑁𝐷 .

b. Using the graph, determine the value of the intrinsic concentration 𝑛𝑖 at 𝑇 = 475 K:

𝑛𝑖 = 1014 𝑐𝑚−3

c. The electron and hole concentrations:

𝑁𝐴 > 𝑁𝐷  so it is P-Type semiconductor  majority carriers are holes p

𝑝 ≅ 𝑁𝐴 − 𝑁𝐷 = 1016 − 8 × 1014 = 9.2 × 1015 𝑐𝑚−3

𝑛𝑖2 1014 2
𝑛= = 15
= 1.087 × 1012 𝑐𝑚−3
Slide
𝑝 9.2 × 10
21
 Exercise 9
d. The Fermi energy (𝐸𝐹 ) with respect to the intrinsic Fermi energy (𝐸𝐹𝑖 ):

𝑛𝑜 𝑛𝑜
𝐸𝐹 = 𝐸𝑖 + 𝐾𝑇𝑙𝑛  𝐸𝐹 − 𝐸𝑖 = 𝐾𝑇𝑙𝑛
𝑛𝑖 𝑛𝑖

−23
1.087 × 1012 −20
𝐸𝐹 − 𝐸𝑖 = 1.38 × 10 × 475 × 𝑙𝑛 = −2.96 × 10 𝐽
1014

Slide
22