Mil STD 883 1

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measures necessary to comply with
this change shall be completed by 16 MIL-STD-883-1
March 2020. 16 September 2019
SUPERSEDING
MIL-STD-883K
w/CHANGE 3
3 May 2018
DEPARTMENT OF DEFENSE
TEST METHOD STANDARD
ENVIRONMENTAL TEST METHODS FOR MICROCIRCUITS
PART 1: TEST METHODS 1000-1999
AMSC N/A FSC 5962
DISTRIBUTION STATEMENT A. Approved for public release. Distribution is unlimited.

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MIL-STD-883-1
FOREWORD
1. This standard is approved for use by all Departments and Agencies of the Department of Defense.
2. This entire standard has been revised. This revision has resulted in many changes to the format, but the most
significant one is the splitting the document into parts. See MIL–STD–883 for the change summary.
3. Comment, suggestions, or questions on this document should be addressed to: Commander, Defense Logistics
Agency, ATTN: DLA Land and Maritime - VA, P.O. Box 3990, Columbus, OH 43218-3990, or by email to
STD883@dla.mil. Since contact information can change, you may want to verify the currency of this address
information using the ASSIST Online database at: https://assist.dla.mil.
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MIL-STD-883-1
CONTENTS
PARAGRAPH Page
1. SCOPE ............................................................................................................................... 1
1.1 Purpose ............................................................................................................................ 1
1.2 Numbering system ........................................................................................................... 1
2. APPLICABLE DOCUMENTS ............................................................................................. 1

2.1 General............................................................................................................................. 1
2.2 Government documents ................................................................................................... 1
2.3 Non-Government publications .......................................................................................... 3
2.4 Order of precedence ........................................................................................................ 5
3. DEFINITIONS..................................................................................................................... 5
3.1 Abbreviations, symbols, and definitions............................................................................ 5
4. GENERAL REQUIREMENTS ............................................................................................ 8

4.1 General............................................................................................................................. 8
4.2 Test circuits ...................................................................................................................... 8
4.3 Destructive tests ............................................................................................................... 8
4.4 Non-destructive tests ........................................................................................................ 9
4.5 Laboratory suitability ........................................................................................................ 9
4.6 Method of reference ......................................................................................................... 9
5. DETAIL REQUIREMENTS ................................................................................................. 9
6. NOTES ............................................................................................................................... 9
6.1 Intended use..................................................................................................................... 9
6.2 International standardization agreement .......................................................................... 9
6.3 Subject term (key word) listing ......................................................................................... 10
6.4 Supersession data ............................................................................................................ 10
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MIL-STD-883-1
TEST METHODS
METHOD NO. ENVIRONMENTAL TESTS
1001 Barometric pressure, reduced (altitude operation)

1002 Immersion
1003 Insulation resistance
1004.7 Moisture resistance
1005.11 Steady state life
1006 Intermittent life
1007.1 Agree life
1008.2 Stabilization bake
1009.8 Salt atmosphere (corrosion)
1010.9 Temperature cycling
1011.9 Thermal shock
1012.1 Thermal characteristics
1013 Dew point
1014.17 Seal
1015.12 Burn-in test
1016.2 Life/reliability characterization tests
1017.3 Neutron irradiation
1018.10 Internal gas analysis
1019.9 Ionizing radiation (total dose) test procedure
1020.1 Dose rate induced latchup test procedure
1021.3 Dose rate upset testing of digital microcircuits
1022 Mosfet threshold voltage
1023.3 Dose rate response of linear microcircuits
1030.2 Preseal burn-in
1031 Thin film corrosion test
1032.1 Package induced soft error test procedure (due to alpha particles)
1033 Endurance life test
1034.2 Die penetrant test (for plastic devices)
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MIL-STD-883-1
1. SCOPE
1.1 Purpose. Part 1 of this test method standard establishes uniform test methods for the basic environmental
testing of microelectronic devices to determine resistance to deleterious effects of natural elements and conditions
surrounding military operations. For the purpose of this standard, the term "devices" includes such items as
monolithic, multichip, film and hybrid microcircuits, microcircuit arrays, and the elements from which the circuits and
arrays are formed. This standard is intended to apply only to microelectronic devices.
1.2 Numbering system. The test methods are designated by numbers assigned in accordance with the following
system:
1.2.1 Classification of tests. The environmental test methods included in this part of a multipart test method
standard are numbered 1001 to 1034 inclusive.
1.2.2 Test method revisions. Revisions are numbered consecutively using a period to separate the test method
number and the revision number. For example, 1001.2 designates the second revision of test method 1001.
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, and 5 of this standard. This
section does not include documents cited in other sections of this standard or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3, 4, and 5 of this
standard, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-680 - Degreasing Solvent, Performance Specification For.

MIL-PRF-19500 - Semiconductor Devices, General Specification For.
MIL-PRF-38534 - Hybrid Microcircuits, General Specification For.
MIL-PRF-38535 - Integrated Circuits (Microcircuits) Manufacturing, General Specification For.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-202 - Electronic and Electrical Component Parts.

MIL-STD-750 - Test Methods for Semiconductor Devices.
MIL-STD-1686 - Electrostatic Discharge Control Program for Protection of Electrical and Electronic
Parts, Assemblies and Equipment (Excluding Electrically Initiated Explosive
Devices).
MIL-STD-1835 - Electronic Component Case Outlines.
MIL-STD-1916 - DOD Preferred Methods for Acceptance of Product.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-217 - Reliability Prediction of Electronic Equipment.

MIL-HDBK-505 - Definitions of Item Levels, Item Exchangeability, Models, and Related Terms.
MIL-HDBK-781 - Reliability Test Methods, Plans, and Environments for Engineering, Development
Qualification, and Production .
MIL-HDBK-1331 - Parameters to be Controlled for the Specification of Microcircuits.
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MIL-STD-883-1
FEDERAL STANDARDS
SAE AMS-STD-595 - Colors Used in Government Procurement

SAE AMS-STD-595/15102 - Blue, Gloss
SAE AMS-STD-595/25102 - Blue, Semi-gloss
OTHER GOVERNMENT DOCUMENTS, DRAWINGS, AND PUBLICATIONS
QML-38534 - Hybrid Microcircuits, General Specification For.

QML-38535 - Integrated Circuits (Microcircuits) Manufacturing, General Specification For.
COMMERCIAL ITEM DESCRIPTIONS
A-A-58092 - Tape, Antiseize, Polytetrafluorethylene.
(Copies of these documents are available online at https://quicksearch.dla.mil.)
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MIL-STD-883-1
2.3 Non-Government publications. The following documents form a part of this document to the extent specified
herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract.
INTERNATIONAL ORGANIZATION FOR STANDARDIZATION (ISO) STANDARDS
ISO 14644-1 - Cleanrooms and Associated Controlled Environments – Part 1: Classification of Air
Cleanliness.
ISO 14644-2 - Cleanrooms and Associated Controlled Environments – Part 2: Specifications for
Testing and Monitoring to Prove Continued Compliance with ISO 14644-1.
ISO /ASTM 51275 - Standard Practice for Use of a Radiochromic Film Dosimetry System.
(Copies of these documents are available online at https://www.iso.org)
AMERICAN NATIONAL STANDARDS INSTITUTE (ANSI)
ANSI/NCSL Z540.3 - Requirements for the Calibration of Measuring and Test Equipment,
General Requirements.
(Copies of these documents are available online at https://ansi.org)
IPC - ASSOCIATION CONNECTING ELECTRONICS INDUSTRIES (IPC)
IPC J-STD-004 - Requirements for Soldering Fluxes.

IPC J-STD-005 - Requirements for Soldering Pastes.
IPC J-STD-006 - Requirements for Electronic Grade Solder Alloys and Fluxed and Non-fluxed Solid
Solders for Electronic Soldering Applications.
IPC J-STD-033 - Handling, Packing, Shipping and Use of Moisture/Reflow Sensitive Surface Mount
Devices.
IPC-T-50 - Terms and Definitions for Interconnecting and Packaging Electronic Circuits.
(Copies of these documents are available online at https://www.ipc.org)
JEDEC SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC).
JEDEC JESD22-B116 - Wire Bond Shear Test

JEDEC JESD78 - IC Latch-up Test.
JEDEC JESD213 - Common Test Method for Detection Component Surface Finish Material.
JEDEC Standard 12 - Standard for Gate Array Benchmark Set
JEDEC Standard 12-1 - Terms and Definitions for Gate Array Benchmark Set.
JEDEC Standard 12-2 - Standard for Cell-Based Integrated Circuit Benchmark Set.
JEDEC Standard 12-3 - CMOS Gate Array Macrocell Standard.
(Copies of these documents are available online at https://www.jedec.org)
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MIL-STD-883-1
NATIONAL COUNCIL ON RADIAATION PROTECTION AND MEASUREMENT
Report Number 40 - Protection Against Radiation from Brachytherapy Sources

Report Number 102 - Medical X-ray, Electron Beam and Gamma Ray Protection
(Copies of these documents are available online at http://www.NCRPPublications.org)

TECHSTREET THOMPSON REUTERS
TechAmerica EIA-557 - Statistical Process Control Systems.
(Copies of these documents are available online at https://www.techstreet.com)
AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM)
ASTM C 177 - Standard Test Method for Steady-State Heat Flux Measurements and Thermal
Transmission Properties by Means of the Guarded Hot-Plate Apparatus.
ASTM C 518 - Standard Test Method for Steady-State Heat Flux Measurements and Thermal
Transmission Properties by Means of the Heat Flow Meter Apparatus.
ASTM D 150 - Standard Test Methods for A-C Loss Characteristics and Permittivity (Dielectric
Constant) of Solid Electrical Insulating Materials.
ASTM D 257 - Standard Test Methods for D-C Resistance or Conductance of Insulating Materials.
ASTM D 877 - Standard Test Methods for Dielectric Breakdown Voltage of Insulating Liquids
Using Disk Electrodes.
ASTM D 971 - Interfacial Tension of Oil Against Water by the Ring Method.
ASTM D 1002 - Standard Test Method for Strength Properties of Adhesives in Shear by Tension
Loading (Metal-to-Metal).
ASTM D 1120 - Engine Coolant, Boiling Point of.
ASTM D 1331 - Standard Test Methods for Surface and Interfacial Tension of Solutions of Surface-
Active Agents.
ASTM D 2109 - Standard Test Methods for Nonvolatile Matter in Halogenated Organic Solvents and
their Admixtures.
ASTM D 3574 - Materials, Flexible Cellular-Slab, Bonded, and Molded Uretane Foam.
ASTM D 3850 - Rapid Thermal Degradation of Solid Electrical Insulating Materials by
Thermogravimetric Method, Test Method for.
ASTM E 263 - Standard Test Method for Measuring Fast-Neutron Reaction Rates by
Radioactivation of Iron.
ASTM E 264 - Standard Test Method for Measuring Fast-Neutron Reaction Rates by
Radioactivation of Nickel.
ASTM E 265 - Standard Test Method for Measuring Reaction Rates and Fast-Neutron Fluences by
Radioactivation of Sulfur-32.
ASTM E 666 - Standard Practice for Calculating Absorbed Dose from Gamma or X-Radiation.
ASTM E 668 - Standard Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems
for Determining Absorbed Dose on Radiation Hardness Testing of Electronic
Devices.
ASTM E 720 - Standard Guide for Selection and Use of Neutron Sensors for Determining Neutron
Spectra Employed in Radiation-Hardness Testing of Electronics.
ASTM E 721 - Standard Method for Determining Neutron Energy Spectra with Neutron-Activation
Foils for Radiation-Hardness Testing of Electronics.
ASTM E 722 - Standard Practice for Characterizing Neutron Energy Fluence Spectra in Terms of
an equivalent Monoenergetic Neutron Fluence for Radiation-Hardness Testing of
Electronics.
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MIL-STD-883-1
AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) (CONTINUED)
ASTM E 801 - Standard Practice for Controlling Quality of Radiological Examination of Electronic
Devices.
ASTM E 831 - Standard Test Method for Linear Thermal Expansion of Solid Materials by
Thermomechanical Analysis
ASTM E 1249 - Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic
Devices.
ASTM E 1250 - Standard Method for Application of Ionization Chambers to Assess the Low Energy
Gamma Component of Cobalt 60 Irradiators Used in Radiation Hardness Testing of
Silicon Electronic Devices.
ASTM E 2450 - Standard Practice for Application of CaF2(Mn) Thermoluminescence Dosimeters in
Mixed Neutron-Photon Environments.
ASTM F 458 - Standard Practice for Nondestructive Pull Testing of Wire Bonds.
ASTM F 459 - Standard Test Methods for Measuring Pull Strength of Microelectronic Wire Bonds.
ASTM F 526 - Standard Test Method for Measuring Dose for Use in Linear Accelerator Pulsed
Radiation Effects Tests.
ASTM F 1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP).
ASTM F 1892 - Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor
Devices.
(Copies of these documents are available online at https://www.astm.org/)
2.4 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
3. DEFINITIONS
3.1 Abbreviations, symbols, and definitions. For the purpose of this standard, the abbreviations, symbols, and
definitions specified in MIL-PRF-19500, MIL-PRF-38535, or MIL-HDBK-505 apply. The following definitions also
apply:
3.1.1 Microelectronic device. A microcircuit, microcircuit module, or an element of a microcircuit as defined in

appendix A of MIL-PRF-38535. For the purposes of this document, each type of microelectronic device will be
identified by a unique type, or drawing number.
3.1.2 Mode of failure. The cause for rejection of any failed device or microcircuit as defined in terms of the specific
electrical or physical requirement which it failed to meet (i.e., no failure analysis is required to identify the mode of
failure, which should be obvious from the rejection criteria of the test method).
3.1.3 Mechanism of failure. The original defect which initiated the microcircuit or device failure or the physical
process by which the degradation proceeded to the point of failure, identifying quality defects, internal, structural, or
electrical weakness and, where applicable, the nature of externally applied stresses which led to failure.
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MIL-STD-883-1
3.1.4 Absolute maximum ratings. The values specified for ratings, maximum ratings, or absolute maximum ratings
are based on the "absolute system" and are not to be exceeded under any measurable or known service or
conditions. In testing microelectronic devices, limits may be exceeded in determining device performance or lot
quality, provided the test has been determined to be nondestructive and precautions are taken to limit device
breakdown and avoid conditions that could cause permanent degradation. These ratings are limiting values beyond
which the serviceability of any individual microelectronic integrated circuit may be impaired. It follows that a
combination of all the absolute maximum ratings cannot normally be attained simultaneously. Combinations of
certain ratings are permissible only if no single maximum rating is exceeded under any service condition. Unless
otherwise specified, the voltage, current, and power ratings are based on continuous dc power conditions at free air
ambient temperature of 25C ±3C. For pulsed or other conditions of operation of a similar nature, the current,
voltage, and power dissipation ratings are a function of time and duty cycle. In order not to exceed absolute ratings,
the equipment designer has the responsibility of determining an average design value, for each rating, below the
absolute value of that rating by a safety factor, so that the absolute values will never be exceeded under any usual
conditions of supply-voltage variations, load variations, or manufacturing variations in the equipment itself.
The values specified for "Testing Ratings" (methods 1005, 1008, 1015, 5004, and 5005) are intended to apply only to
short-term, stress-accelerated storage, burn-in, and life tests and should not be used as basis for equipment design.
3.1.5 Worst case condition. Worst case condition(s) consists of the simultaneous application of the most adverse
(in terms of required function of the device) values (within the stated operating ranges) of bias(es), signal input(s),
loading and environment to the device under test. Worst cases for different parameters may be different. If all the
applied test conditions are not established at the most adverse values, the term "partial worst case condition" should
be used to differentiate and should be accompanied by identification of the departure from worst case. For example,
the lowest values of supply voltages, signal input levels, and ambient temperature and the highest value of loading
may constitute "worst case conditions" for measurement of the output voltage of a gate. Use of the most adverse
values of applied electrical conditions, at room temperature, would then constitute "partial worst case conditions" and
should be so identified using a postscript "at room temperature."
3.1.5.1 Accelerated test condition. Accelerated test conditions are defined as test conditions using one or more
applied stress levels which exceed the maximum rated operating or storage stress levels but are less than or equal to
the "Testing Rating" values.
3.1.6 Static parameters. Static parameters are defined as dc voltages, dc currents, or ratios of dc voltages or dc
currents, or both.
3.1.7 Dynamic parameters. Dynamic parameters are defined as those which are rms or time-varying values of
voltages or currents, or ratios of rms or time-varying values of voltages or currents, or both.
3.1.8 Switching parameters. Switching parameters are defined as those which are associated with the transition of
the output from one level to another or the response to a step input.
3.1.9 Functional tests. Functional tests are defined as those go, no-go tests which sequentially exercise a function
(truth) table or in which the device is operated as part of an external circuit and total circuit operation is tested.
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MIL-STD-883-1
3.1.10 Acquiring activity. The acquiring activity is the organizational element of the Government which contracts
for articles, supplies, or services; or it may be a contractor or subcontractor when the organizational element of the
Government has given specific written authorization to such contractor or subcontractor to serve as agent of the
acquiring activity. A contractor or subcontractor serving as agent of the acquiring activity does not have the authority
to grant waivers, deviations, or exceptions unless specific written authorization to do so has also been given by the
Government organization.
3.1.11 Accuracy. The quality of freedom from error. Accuracy is determined or assured by calibration, or reliance
upon calibrated items.
3.1.12 Calibration. Comparison of measurement standard or instrument of known accuracy with another standard,
instrument or device to detect, correlate, report or eliminate by adjustment, any variation in the accuracy of the item
being compared. Use of calibrated items provide the basis for value traceability of product technical specifications to
national standard values. Calibration is an activity related to measurement and test equipment performed in
accordance with ANSI/NCSL Z540.3 or equivalent.
3.1.13 Precision. The degree to which an instrument, device, assemblage, test, measurement or process exhibits
repeatability. Expressed statistically or through various techniques of Statistical Process Control (SPC). Term is
used interchangeably with "repeatability".
3.1.14 Resolution. The smallest unit of readability or indication of known value in an instrument, device or
assemblage thereof.
3.1.15 Standard reference material (SRM). A device or artifact recognized and listed by the National Institute of
Standards and Technology (NIST) as having known stability and characterization. SRM's used in product testing
provide traceability for technical specifications. SRM's do not require calibration when used and stored in accordance
with NIST accompanying instructions. They are used as "certified materials".
3.1.16 Tolerance. A documented range over which a specified value may vary.
3.1.17 Test accuracy ratio (TAR). A ratio of the tolerance of the device under test to the accuracy of the related
measuring or test instrument or to the accuracy of the correlation device/SRM.
3.1.18 Uncertainty. An expression of the combined errors in a test measurement process. Stated as a range
within which the subject quantity is expected to lie. Comprised of many components including: estimates of
statistical distribution and results of measurement or engineering analysis. Uncertainty established with a suitable
degree of confidence, may be used in assuring or determining product conformance and technical specifications.
3.1.19 Susceptibility. The point at which a device fails to meet the postirradiation end-point electrical parameter
limits or fails functionally during radiation exposure (e.g., neutron irradiation).
3.1.20 Class M. Class M is defined as 1.2.1 of MIL-STD-883 basic compliant product or product built in
compliance to Appendix A of MIL-PRF-38535 documented on a Standard Microcircuit Drawing where configuration
control is provided by the Government preparing activity. Class M devices are required to use the conditions
specified in the test methods herein for class level B product.
3.1.21 Class level B and class level S. 2 class levels are used in this document to define requirements for high
reliability military applications (Class level B) and space applications (Class level S). Class level B requirements
contained in this document are intended for use for Class Q, Class H, and Class M products, as well as Class B
M38510 JAN slash sheet product. Class level B requirements are also intended for use for product claimed as 883
compliant or 1.2.1 compliant for high reliability military applications. Class level S requirements contained in this
document are intended for use for Class V, Class K, as well as M38510 Class S JAN slash sheet product. Class
level S requirements are also intended for use for product claimed as 883 compliant or 1.2.1 of MIL-STD-883 basic
compliant for space level applications.
3.1.22 Acquisition documents. Acquisition documents consist of the acquisition order or contract, device
specification (e.g. SMD’s, SCD’s) or specifications as applicable.
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MIL-STD-883-1
4. GENERAL REQUIREMENTS
4.1 General. Unless otherwise specified in the individual test method, the general requirements of MIL-STD-883
shall apply.
4.2 Test circuits. The test circuits shown in the test methods of this test method standard are given as examples
which may be used for the measurements. They are not necessarily the only test circuits which can be used;
however the manufacturer shall demonstrate to the Government that other test circuits which they may desire to use
will give results within the desired accuracy of measurement.
4.3 Destructive tests. Unless otherwise demonstrated, the test methods listed in table I shall be classified as
destructive. MIL-STD-883 covers the necessary actions needed to reclassify a test method as non-destructive.
TABLE I. Destructive tests.
Test method number Test

1002 Immersion
1004 Moisture resistance
1005 Steady state life
1009 Salt atmosphere
1017 Neutron irradiation
1018 Internal gas analysis
1019 Ionizing radiation test procedure
Dose rate upset testing of digital
1021
microcircuits
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MIL-STD-883-1
4.4 Non–destructive tests. Unless otherwise demonstrated, the test methods listed in table II shall be classified as
nondestructive.
TABLE II. Non-destructive tests.
Test method number Test

1001 Barometric pressure
1005 Steady-state life
1006 Intermittent life
1014 Seal
1015 Burn-in test
4.5 Laboratory suitability. Prior to processing any microcircuit intended for use in any military system or sub-
system, the facility performing the test(s) shall be audited by the DLA Land and Maritime, Sourcing and Qualification
Division and be granted written laboratory suitability status for each test method to be employed. Processing of any
devices by any facility without laboratory suitability status for the test methods used shall render the processed
devices nonconforming.
4.6 Method of reference. When applicable, test methods contained herein shall be referenced in the individual
specification or specification sheet by specifying the test method number and, the details required in the summary of
the applicable test method shall be listed. To avoid the necessity for changing documents that refer to test methods
of this standard, the revision number should not be used when referencing test methods. (For example: Use 1001
versus 1001.2.)
5. DETAILED REQUIREMENTS
This section is not applicable to this standard.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Intended use. The intended use of this test method standard is to establish appropriate conditions for testing
semiconductor devices to give test results that simulate the actual service conditions existing in the field. This test
method standard has been prepared to provide uniform test methods, controls, and procedures for determining with
predictability the suitability of such devices within military, aerospace and special application equipment.
6.2 International standardization agreement. Certain provisions of this test method standard are the subject of
international standardization agreement. When amendment, revision, or cancellation of this test method standard is
proposed which will affect or violate the international agreement concerned, the preparing activity will take
appropriate reconciliation action through international standardization channels, including departmental
standardization offices, if required.
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MIL-STD-883-1
6.3 Subject term (key word) listing
Destructive tests
Environmental tests
Laboratory suitability
Non–destructive tests
6.4 Supersession data The main body and five parts (–1 through –5) of this revision of MIL-STD-883 replace
superseded MIL–STD–883K
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MIL-STD-883-1
METHOD 1001
BAROMETRIC PRESSURE, REDUCED (ALTITUDE OPERATION)
1. PURPOSE. The barometric-pressure test is performed under conditions simulating the low atmospheric
pressure encountered in the nonpressurized portions of aircraft and other vehicles in high-altitude flight. This test is
intended primarily to determine the ability of component parts and materials to avoid voltage breakdown failures due
to the reduced dielectric strength of air and other insulating materials at reduced pressures. Even when low
pressures do not produce complete electrical breakdown, corona and its undesirable effects, including losses and
ionization are intensified. The simulated high-altitude conditions of this test can also be employed to investigate the
influence on components' operating characteristics, of other effects of reduced pressure, including changes in
dielectric constants of materials, and decreased ability of thinner air to transfer heat away from heat-producing
components.
2. APPARATUS. The apparatus used for the barometric-pressure test shall consist of a vacuum pump and a
suitable sealed chamber having means for visual observation of the specimen under test when necessary, a suitable
pressure indicator to measure the simulated altitude in feet in the sealed chamber, and a microammeter or
oscilloscope capable of detecting current over the range from dc to 30 megahertz.
3. PROCEDURE. The specimens shall be mounted in the test chamber as specified and the pressure reduced to
the value indicated in one of the following test conditions, as specified. While the specimens are maintained at the
specified pressure, the specimens shall be subjected to the specified tests. During this test and for a period of 20
minutes before, the test temperature shall be 25°C ±10°C. The device shall have the specified voltage applied and
shall be monitored over the range from atmospheric pressure to the specified minimum pressure and return for any
device malfunctions. A device which exhibits arc-overs, harmful coronas, or any other defect or deterioration which
may interfere with the operation of the device shall be considered a failure.
Test condition Pressure, maximum Altitude

Inches of mercury mm of mercury Feet Meters
A 17.3 439.00 15,000 4,572
B 8.88 226.00 30,000 9,144
C 3.44 87.00 50,000 15,240
D 1.31 33.00 70,000 21,336
E 0.315 8.00 100,000 30,480
F 0.043 1.09 150,000 45,720
G 9.436 x 10-8 2.40 x 10-6 656,000 200,000
3.1 Measurement. The device shall be connected for measurement and have the specified voltages applied
during the entire pump-down cycle. The terminals to which the maximum voltage (see 4c.) is applied shall be
monitored with a microammeter or oscilloscope for corona currents in the range from dc to 30 megahertz. Provision
shall be made for calibrating the current flow in the test circuit minus the device under the applicable test condition to
insure that test readings are characteristic of the device under test.
METHOD 1001
1 May 1968
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MIL-STD-883-1
4. SUMMARY. The following details must be specified in the applicable acquisition document:
a. Method of mounting (see 3).
b. Test condition letter (see 3). Unless otherwise specified, condition E shall be used.
c. Tests during subjection to reduced pressure (see 3). Unless otherwise specified, the device shall be
subjected to the maximum voltage it would be subjected to under rated operating conditions.
d. Tests after subjection to reduced pressure, if applicable (see 3). Unless otherwise specified, the device
shall be subjected to full electrical tests of specified device characteristics or parameters.
e. Exposure time prior to measurement, if applicable (see 3)
METHOD 1001
1 May 1968
2
MIL-STD-883-1
METHOD 1002
IMMERSION
1. PURPOSE. This test is performed to determine the effectiveness of the seal of microelectronic devices. The
immersion of the part under evaluation into liquid at widely different temperatures subjects it to thermal and
mechanical stresses which will readily detect a defective terminal assembly, or a partially closed seam or molded
enclosure. Defects of these types can result from faulty construction or from mechanical damage such as might be
produced during physical or environmental tests. The immersion test is generally performed immediately following
such tests because it will tend to aggravate any incipient defects in seals, seams, and bushings which might
otherwise escape notice. This test is essentially a laboratory test condition, and the procedure is intended only as a
measurement of the effectiveness of the seal following this test. The choice of fresh or salt water as a test liquid is
dependent on the nature of the component part under test. When electrical measurements are made after immersion
cycling to obtain evidence of leakage through seals, the use of a salt solution instead of fresh water will facilitate
detection of moisture penetration. This test provides a simple and ready means of detection of the migration of
liquids. Effects noted can include lowered insulation resistance, corrosion of internal parts, and appearance of salt
crystals. The test described is not intended as a thermal- shock or corrosion test, although it may incidentally reveal
inadequacies in these respects. This is a destructive test and shall not be used as a 100 percent test or screen.
2. APPARATUS. The apparatus used for the immersion test shall consist of controlled temperature baths capable
of maintaining the temperatures indicated for the hot bath and the cold bath test condition selected. A suitable
temperature indicator shall be used to measure bath temperature.
3. PROCEDURE. This test consists of successive cycles of immersions, each cycle consisting of immersion in a
hot bath of fresh (tap) water at a temperature of 65°C +5°C, -0°C followed by immersion in a cold bath. The number
of cycles, duration of each immersion, and the nature and temperature of the cold bath shall be as indicated in the
applicable test condition listed below, as specified. The transfer of specimens from one bath to another shall be
accomplished as rapidly as practicable and in no case shall transfer time exceed 15 seconds. After completion of the
final cycle, specimens shall be thoroughly and quickly washed in fresh (tap) water or distilled water and all surfaces
wiped or air-blasted clean and dry. Unless otherwise specified, measurements shall be made at least 4 hours, but
not more than 48 hours, after completion of the final cycle. When specified in the applicable acquisition document,
upon completion of the electrical measurements and external visual examination, the device shall be delidded or
dissected and examined in accordance with method 2013 for evidence of corrosion of internal elements or the
appearance of salt crystals. Where this test is performed as part of a group or subgroup of tests, the post-test
measurements or inspections need not be performed specifically at the conclusion of this test, but may be performed
once at the conclusion of the group or subgroup.
METHOD 1002
1 May 1968
1
MIL-STD-883-1
Test Number of Duration of Immersion bath Temperature

condition cycles each immersion (cold) of cold bath
(minutes) °C
A 2 15 Fresh (tap) water 25 +10

-5
B 2 15 Saturated solution 25 +10

of sodium chloride -5
and water
C 5 60 Saturated solution 0 3
of sodium chloride
and water
D 5 60 (Parts by volume) 0 3
Water -48 parts
Methanol 1/ -50
parts
Morpholine -1
part
3.5-dimethyl-1-
hexyn-3-o1-1 part
Stannous
chloride -
5 grams
1/ Synonyms are tetrahydro-1, 4-oxazine and diethylenimide oxide.
a. Test condition letter (see 3). Unless otherwise specified, condition C shall be used.
b. Time after final cycle allowed for measurements, if other than that specified (see 3).
c. Measurements after final cycle (see 3). Unless otherwise specified, measurements shall include pin-to-pin
resistance, pin-to-case resistance and full electrical test of all device characteristics or parameters listed in
the applicable acquisition document. Final evaluation shall include external visual examination for legibility
of device markings and for evidence of discoloration or corrosion of package and leads.
d. Dissection and internal examination, where applicable (see 3)
METHOD 1002
1 May 1968
2
MIL-STD-883-1
METHOD 1003
INSULATION RESISTANCE
1. PURPOSE. This test is to measure the resistance offered by the insulating members of a component part to an
impressed direct voltage tending to produce a leakage of current through or on the surface of these members.
Insulation- resistance measurements should not be considered the equivalent of dielectric withstanding voltage or
electric breakdown tests. A clean, dry insulation may have a high insulation resistance, and yet possess a
mechanical fault that would cause failure in the dielectric withstanding voltage test. Since insulating members
composed of different materials or combinations of materials may have inherently different insulation resistances, the
numerical value of measured insulation resistance cannot properly be taken as a direct measure of the degree of
cleanliness or absence of deterioration.
1.1 Factors affecting use. Factors affecting insulation-resistance measurements include temperature, humidity,
residual charges, charging currents or time constant of instrument and measured circuit, test voltage, previous
conditioning, and duration of uninterrupted test voltage application (electrification time). In connection with this
last-named factor, it is characteristic of certain components (for example, capacitors and cables) for the current to
usually fall from an instantaneous high value to a steady lower value at a rate of decay which depends on such
factors as test voltage, temperature, insulating materials, capacitance, and external circuit resistance. Consequently,
the measured insulation resistance will increase for an appreciable time as test voltage is applied uninterruptedly.
Because of this phenomenon, it may take many minutes to approach maximum insulation-resistance readings, but
specifications usually require that readings be made after a specified time. This shortens the testing time
considerably while still permitting significant test results, provided the insulation resistance is reasonably close to
steady-state value, the current versus time curve is known, or suitable correction factors are applied to these
measurements. For certain components, a steady instrument reading may be obtained in a matter of seconds.
When insulation-resistance measurements are made before and after a test, both measurements should be made
under the same conditions.
2. APPARATUS. Insulation-resistance measurements shall be made on an apparatus suitable for the

characteristics of the component to be measured such as a megohm bridge, megohmmeter, insulation-resistance test
set, or other suitable apparatus.
METHOD 1003
1 May 1968
1
MIL-STD-883-1
3. PROCEDURE. When special preparations or conditions such as special test fixtures, reconnections,
grounding, isolation, low atmospheric pressure, humidity, or immersion in water are required, they shall be specified.
Insulation- resistance measurements shall be made between the mutually insulated points or between insulated
points and ground, as specified. When electrification time is a factor, the insulation-resistance measurements shall
be made immediately after the specified time (see 4) of uninterrupted test voltage application, unless otherwise
specified. However, if the instrument-reading indicates that an insulation resistance meets the specified limit, and is
steady or increasing, the test may be terminated before the end of the specified period. When more than one
measurement is specified, subsequent measurements of insulation resistance shall be made using the same polarity
as the initial measurements. Unless otherwise specified, the direct potential applied to the specimen shall be that
indicated by one of the test condition letters, as specified below, and insulation resistance measurements shall be
made with both polarities of the applied voltage:
Test condition Test potential
A 10 volts ±10%
B 25 volts ±10%
C 50 volts ±10%
D 100 volts ±10%
E 500 volts ±10%
F 1,000 volts ±10%
For inplant quality conformance testing, any voltage may be used provided it is equal to or greater than the minimum
potential allowed by the applicable test condition. Unless otherwise specified, the measurement error at the
insulation-resistance value shall not exceed 10 percent. Proper guarding techniques shall be used to prevent
erroneous readings due to leakage along undesired paths.
METHOD 1003
1 May 1968
2
MIL-STD-883-1
a. Test condition letter, or other test potential, if specified (see 3).
b. Special preparations or conditions, if required (see 3).
c. Points of measurement (see 3). Unless otherwise specified, insulation resistance shall be measured
between the device leads (all leads electrically connected to each other or to a common point) and the
device case, and the measured resistance shall be no less than 15 megohms.
d. Electrification time, if critical (see 1.1).
e. Insulation resistance in terms of maximum leakage current at a specified test voltage. Unless otherwise
specified, the maximum leakage between any adjacent disconnected leads shall not exceed 100
nanoampere at 100 volts dc.
METHOD 1003
1 May 1968
3
MIL-STD-883-1
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METHOD 1003
1 May 1968
4
MIL-STD-883-1
METHOD 1004.7
MOISTURE RESISTANCE
1. PURPOSE. The moisture resistance test is performed for the purpose of evaluating, in an accelerated manner,
the resistance of component parts and constituent materials to the deteriorative effects of the high-humidity and heat
conditions typical of tropical environments. Most tropical degradation results directly or indirectly from absorption of
moisture vapor and films by vulnerable insulating materials, and from surface wetting of metals and insulation. These
phenomena produce many types of deterioration, including corrosion of metals; constituents of materials; and
detrimental changes in electrical properties. This test differs from the steady-state humidity test and derives its added
effectiveness in its employment of temperature cycling, which provides alternate periods of condensation and drying
essential to the development of the corrosion processes and, in addition, produces a "breathing" action of moisture
into partially sealed containers. Increased effectiveness is also obtained by use of a higher temperature, which
intensifies the effects of humidity. The test includes a low-temperature subcycle that acts as an accelerant to reveal
otherwise indiscernible evidences of deterioration since stresses caused by freezing moisture tend to widen cracks
and fissures. As a result, the deterioration can be detected by the measurement of electrical characteristics
(including such tests as voltage breakdown and insulation resistance) or by performance of a test for sealing.
Provision is made for the application of a polarizing voltage across insulation to investigate the possibility of
electrolysis, which can promote eventual dielectric breakdown. This test also provides for electrical loading of certain
components, if desired, in order to determine the resistance of current-carrying components, especially fine wires and
contacts, to electrochemical corrosion. Results obtained with this test are reproducible and have been confirmed by
investigations of field failures. This test has proved reliable for indicating those parts which are unsuited for tropical
field use.
2. APPARATUS. The apparatus used for the moisture resistance test shall include temperature-humidity
chambers capable of maintaining the cycles and tolerance described on figure 1004-1 and electrical test equipment
capable of performing the measurements in 3.6 and 4.
3. PROCEDURE. Specimens shall be tested in accordance with 3.2 through 3.7 inclusive, and figure 1004-1.
Specimens shall be mounted in a manner that will expose them to the test environment.
3.1 Initial conditioning. Unless otherwise specified, prior to mounting specimens for the moisture resistance test,
the device leads shall be subjected to a bending stress, initial conditioning in accordance with test condition B1 of
method 2004. Where the specific sample devices being subjected to the moisture resistance test have already been
subjected to the required initial conditioning, as part of another test employing the same sample devices, the lead
bend need not be repeated.
3.2 Initial measurements. Prior to step 1 of the first cycle, the specified initial measurements shall be made at
room ambient conditions, or as specified. When specified, the initial conditioning in a dry oven (see figure 1004-1)
shall precede initial measurements and the initial measurements shall be completed within 8 hours after removal from
the drying oven.
3.3 Number of cycles. Specimens shall be subjected to 10 continuous cycles, each as shown on figure 1004-1. In
the event of no more than one unintentional test interruption (power interruption or equipment failure) prior to the
completion of the specified number of cycles (except for the last cycle) the cycle shall be repeated and the test may
continue. Unintentional interruptions occurring during the last cycle require a repeat of the cycle plus an additional
uninterrupted cycle. Any intentional interruption, or any unintentional interruption of greater than 24 hours requires a
complete retest.
METHOD 1004.7
17 August 1987
1
MIL-STD-883-1
3.4 Subcycle of step 7. During at least 5 of the 10 cycles a low temperature subcycle shall be performed. At least
1 hour but not more than 4 hours after step 7 begins, the specimens shall be either removed from the humidity
chamber, or the temperature of the chamber shall be reduced, for performance of the subcycle. Specimens during
the subcycle shall be conditioned at -10°C +2°C, -5°C, with humidity not controlled, for 3 hours minimum as indicated
on figure 1004-1. When a separate cold chamber is not used, care should be taken to assure that the specimens are
held at -10°C +2°C, -5°C, for the full period. After the subcycle, the specimens shall be returned to 25°C at 80
percent relative humidity (RH) minimum and kept there until the next cycle begins.
3.5 Applied voltage. During the moisture resistance test as specified on figure 1004-1, when specified (see 4), the
device shall be biased in accordance with the specified bias configuration which should be chosen to maximize the
voltage differential between chip metallization runs or external terminals, minimize power dissipation and to utilize as
many terminals as possible to enhance test results.
3.6 Conditions (see figure 1004-1). The rate of change of temperature in the chamber is unspecified; however,
specimens shall not be subject to the radiant heat from the chamber conditioning processes. The circulation of air in
the chamber shall be at a minimum cubic rate per minute equivalent to five times the volume of the chamber unless
otherwise specified. The steady-state temperature tolerance is ±2°C of the specified temperature at all points within
the immediate vicinity of the specimens and at the chamber surfaces. Specimens weighing 25 pounds or less shall
be transferred between temperature chambers in less than 2 minutes.
3.7 Final measurements. Following step 6 of the final cycle (or step 7 if the subcycle of 3.3 is performed during the
tenth cycle), devices shall be conditioned for 24 hours at room ambient conditions after which either an insulation
resistance test in accordance with method 1003, test condition A, or the specified 25°C electrical end-point
measurements shall be performed. Electrical measurements may be made during the 24 hour conditioning period.
However, any failures resulting from this testing shall be counted, and any retesting of these failures later in the 24
hour period for the purpose of obtaining an acceptable result is prohibited. No other test (e.g., seal) shall be
performed during the 24 hour conditioning period. The insulation resistance test or the alternative 25°C electrical
end-point measurements shall be completed within 48 hours after removing the devices from the chamber. When the
insulation resistance test is performed, the measured resistance shall be no less than 10 megohms and the test shall
be recorded and data submitted as part of the end-point data. If the package case is electrically connected to the die
substrate by design, the insulation resistance test shall be omitted and the specified 25°C electrical end-point
measurements shall be completed within 48 hours after removal of the device from the chamber. A visual
examination and any other specified end-point electrical parameter measurements (see 4.c) shall also be performed.
3.8 Failure criteria. No device shall be acceptable that exhibits:
a. Specified markings which are missing in whole or in part, faded, smeared, blurred, shifted, or dislodged to
the extent that they are not legible. This examination shall be conducted with normal room lighting and with
a magnification of 1X to 3X.
b. Evidence of corrosion over more than 5 percent of the area of the finish or base metal of any package
element (i.e., lid, lead, or cap) or any corrosion that completely crosses the element when viewed with a
magnification of 10X to 20X.
c. Leads missing, broken, or partially separated.
d. Corrosion formations which bridge between leads or between leads and metal case.
e. Electrical end-point or insulation resistance test failures.
NOTE: The finish shall include the package and entire exposed lead area from meniscus to the lead tip
(excluding the sheared off tip itself) and all other exposed metal surfaces.
METHOD 1004.7
17 August 1987
2
MIL-STD-883-1
4. SUMMARY. The following details shall be specified in the applicable acquisition document:
a. Initial measurements and conditions, if other than room ambient (see 3.1 and 3.2).
b. Applied voltage, when applicable (see 3.5), and bias configuration, when required. This bias configuration
shall be chosen in accordance with the following guidelines:
(1) Only one supply voltage (V) either positive or negative is required, and an electrical ground (GND) or
common terminal. The magnitude of V will be the maximum such that the specified absolute
maximum ratings are not exceeded and test conditions are optimized.
(2) All normally specified voltage terminals and ground leads shall be connected to GND, unless
otherwise specified.
(3) All data inputs, unless otherwise specified, shall be connected to V. The polarity and magnitude of V
is chosen to minimize internal power dissipation and current flow into the device. All extender inputs
shall be connected to GND, unless otherwise specified.
(4) All additional leads, e.g., clock, set, reset, outputs, etc., considered individually, shall be connected to
V or GND whichever minimizes current flow.
(5) Leads with no internal connection shall be biased to V or GND whichever is opposite to an adjacent
lead.
c. Final measurements (see 3.7). Final measurements shall include all electrical characteristics and
parameters which are specified as end-point electrical parameters.
d. Number of cycles, if other than 10 (see 3.3).
e. Conditioning in dry oven before initial measurements, if required (see 3.2).
METHOD 1004.7
17 August 1987
3
MIL-STD-883-1
FIGURE 1004-1. Graphical representation of moisture-resistance test.
METHOD 1004.7
17 August 1987
4
MIL-STD-883-1
METHOD 1005.11
STEADY-STATE LIFE
1. PURPOSE. The steady-state life test is performed for the purpose of demonstrating the quality or reliability of
devices subjected to the specified conditions over an extended time period. Life tests conducted within rated
operating conditions should be conducted for a sufficiently long test period to assure that results are not characteristic
of early failures or "infant mortality," and periodic observations of results should be made prior to the end of the life
test to provide an indication of any significant variation of failure rate with time. Valid results at shorter intervals or at
lower stresses require accelerated test conditions or a sufficiently large sample size to provide a reasonable
probability of detection of failures in the sample corresponding to the distribution of potential failures in the lot(s) from
which the sample was drawn. The test conditions provided in 3 below are intended to reflect these considerations.
When this test is employed for the purpose of assessing the general capability of a device or for device qualification
tests in support of future device applications requiring high reliability, the test conditions should be selected so as to
represent the maximum operating or testing (see test condition F) ratings of the device in terms of electrical input(s),
load and bias and the corresponding maximum operating or testing temperature or other specified environment.
2. APPARATUS. Suitable sockets or other mounting means shall be provided to make firm electrical contact to
the terminals of devices under test in the specified circuit configuration. Except as authorized by the acquiring or
qualifying activity, the mounting means shall be so designated that they will not remove internally-dissipated heat
from the device by conduction, other than that removed through the device terminals, the necessary electrical
contacts and the gas or liquid chamber medium. The apparatus shall provide for maintaining the specified biases at
the terminals of the device under test and, when specified, monitoring of the input excitation or output response.
Power supplies and current-setting resistors shall be capable of maintaining the specified operating conditions as
minimal throughout the testing period, despite normal variations in source voltages, ambient temperatures, etc.
When test conditions result in significant power dissipation, the test apparatus shall be arranged so as to result in the
approximate average power dissipation for each device whether devices are tested individually or in a group. The
test circuits need not compensate for normal variations in individual device characteristics, but shall be so arranged
that the existence of failed or abnormal (i.e., open, short, etc.) devices in a group does not negate the effect of the
test for other devices in the group.
3. PROCEDURE. The microelectronic devices shall be subjected to the specified test condition (see 3.5) for the
specified duration at the specified test temperature, and the required measurements shall be made at the specified
intermediate points and end points. QML manufactures who are certified and qualified to MIL-PRF-38535 may
modify the time or the condition independently from the regression conditions contained in table I or the test
condition/circuit specified in the device specification or standard microcircuit drawing provided the modification is
contained in the manufacturer's QM plan and the "Q" certification identifier is marked on the devices. Lead-, stud-, or
case-mounted devices shall be mounted by the leads, stud, or case in their normal mounting configuration, and the
point of connection shall be maintained at a temperature not less than the specified ambient temperature. The test
condition, duration, sample size, and temperature selected prior to test shall be recorded and shall govern for the
entire test. Test boards shall not employ load resistors which are common to more than one device, or to more than
one output pin on the same device.
3.1 Test duration.
3.1.1 Test duration - standard life. The life test duration shall be 1,000 hours minimum at 125°C , unless otherwise
specified or allowed (see 3.2.1). After the specified duration of the test, the device shall be removed from the test
conditions and allowed to reach standard test conditions. Where the purpose of this test is to demonstrate
compliance with a specified lambda (8), the test may be terminated at the specified duration or at the point of
rejection if this occurs prior to the specified test duration.
METHOD 1005.11
22 February 2017
1
MIL-STD-883-1
3.1.2 Accelerated life test duration. For class level B, the life test duration, when accelerated, shall be the time
equivalent to 1,000 hours at 125°C for the ambient temperature selected or specified (see table I). Within 72 hours
after the specified duration of the test, the device shall be removed from the specified test conditions and allowed to
reach standard test conditions without removal of bias. The interruption of bias for up to one minute for the purpose
of moving the devices to cool-down positions separate from the chamber within which life testing was performed shall
not be considered removal of bias.
3.2 Test temperature. The specified test temperature is the minimum ambient temperature to which all devices in
the working area of the chamber shall be exposed. This shall be assured by making whatever adjustments are
necessary in the chamber profile, loading, location of control or monitoring instruments, and the flow of air or other
suitable gas or liquid chamber medium. Therefore, calibration shall be accomplished in the chamber in a fully loaded,
(boards need not be loaded with devices) unpowered configuration, and the indicator sensor located at, or adjusted to
reflect, the coldest point in the working area.
3.2.1 Test temperature - standard life. Unless otherwise specified, the ambient life test temperature shall be
125°C minimum for test conditions A through E (see 3.5), except that for hybrid microcircuits, the conditions may be
modified in accordance with table I. At the supplier's option, the ambient temperature for conditions A through E may
be increased and the test duration reduced in accordance with table I using the specified test circuit and bias
conditions. Since case and junction temperature will, under normal circumstances, be significantly higher than
ambient temperature, the circuit should be so structured that maximum rated case or junction temperatures for test or
operation shall not exceed 200°C for class level B or 175°C for class level S (see 3.2.1.1).
3.2.1.1 Test temperature for high power devices. Regardless of power level, devices shall be able to be life-tested
at their maximum rated operating temperature.
a. For devices whose maximum operating temperature is stated in terms of ambient temperature, TA, table I
applies.
b. For devices whose maximum operating temperature is stated in terms of case temperature, TC, and where
the ambient temperature would cause TJ to exceed +200°C (+175°C for class level S), the ambient
operating temperature may be reduced during test from +125°C TA to a value that will demonstrate a TJ
between +175°C and +200°C and TC equal to or greater than +125°C without changing the test
duration. Data supporting this reduction shall be available to the acquiring and qualifying activities upon
request.
c. For devices whose maximum operating temperature is stated in terms of case TC , or junction TJ, and
whose operation cannot exceed the maximum allowable junction temperature then the ambient life test
operating temperature may be reduced. The ambient temperature may be reduced from +125°C TA or Tc,
provided TJ is maintained within 10% of its maximum specified value. The life test duration shall be
increased to match the corresponding times in table I. The test conditions and data supporting this
alternate method shall be approved by the qualifying activity.
3.2.1.2 Test temperature for hybrid devices. The ambient or case life test temperature shall be as specified in
table I, except case temperature life test shall be performed, as a minimum, at the maximum operating case
temperature (TC) specified for the device. Life test shall be for 1,000 hours minimum for class level S hybrid
(class K). The device should be life tested at the maximum specified operating temperature, voltage, and loading
conditions as specified in the detail specification. Since case and junction temperature will, under normal
circumstances, be significantly higher than ambient temperature, the circuit should be so structured that the
maximum rated junction temperature as specified in the device specification or drawing and the cure temperature of
polymeric materials as specified in the baseline documentation shall not be exceeded. If no maximum junction
temperature is specified, a maximum of 175°C is assumed. Accelerated life test (condition F) shall not be permitted.
The specified test temperature shall be the minimum actual ambient or case temperature that must be maintained for
all devices in the chamber. This shall be assured by making whatever adjustments are necessary in the chamber
profile, loading, location of control or monitoring instruments and the flow of air or other suitable gas or liquid chamber
medium.
METHOD 1005.11
22 February 2017
2
MIL-STD-883-1
3.2.2 Test temperature - accelerated life. When condition F is specified or is utilized as an option (when allowed
by the applicable acquisition documents), the minimum ambient test temperature shall be +175°C , unless otherwise
specified. Since accelerated testing will normally be performed at temperatures higher than the maximum rated
operating junction temperature of the device(s) tested, care shall be taken to ensure that the device(s) does not go
into thermal runaway.
3.2.3 Special considerations for devices with internal thermal limitation using test conditions A through E. For
devices with internal thermal shutdown, extended exposure at a temperature in excess of the shut-down temperature
will not provide a realistic indicator of long-term operating reliability. For devices equipped with thermal shutdown,
operating life test shall be performed at an ambient temperature where the worst case junction temperature is at least
5°C below the worst case thermal shutdown threshold. Data supporting the defined thermal shutdown threshold
shall be available to the preparing or acquiring activity upon request.
3.3 Measurements.
3.3.1 Measurements for test temperatures less than or equal to 150°C . Unless otherwise specified, all specified
intermediate and end-point measurements shall be completed within 96 hours after removal of the device from the
specified test conditions (i.e., either removal of temperature or bias). If these measurements cannot be completed
within 96 hours, the devices shall be subjected to the same test condition (see 3.5) and temperature previously used
for a minimum of 24 additional hours before intermediate or end-point measurements are made. When specified (or
at the manufacturer's discretion, if not specified), intermediate measurements shall be made at 168 (+72, -0) hours
and at 504 (+168, -0) hours. For tests in excess of 1,000 hours duration, additional intermediate measurement
points, when specified, shall be 1000 (+168, -24) hours, 2,000 (+168, -24) hours, and each succeeding 1,000
(+168, -24) hour interval. These intermediate measurements shall consist of the parameters and conditions
specified, including major functional characteristics of the device under test, sufficient to reveal both catastrophic and
degradation failures to specified limits. Devices shall be cooled to less than 10°C of their power stable condition at
room temperature prior to the removal of bias.
The interruption of bias for up to one minute for the purpose of moving the devices to cool-down positions separate
from the chamber within which life testing was performed shall not be considered removal of bias. Alternatively,
except for linear, or MOS (CMOS, NMOS, PMOS, etc.) devices and hybrid devices which containing linear or MOS
devices components, or unless otherwise specified, the bias may be removed during cooling provided the case
temperature of devices under test is reduced to a maximum of 35°C within 30 minutes after the removal of the test
conditions and provided the devices under test are removed from the heated chamber within 5 minutes following
removal of bias. All specified 25°C electrical measurements shall be completed prior to any reheating of the
device(s).
3.3.2 Measurements for test temperatures greater than or equal to 175°C . Unless otherwise specified, all
specified intermediate and end-point measurements shall be completed within 24 hours after removal of the device
from the specified test conditions (i.e., either removal of temperature or bias). If these measurements cannot be
completed within 24 hours, the steady-state life test shall be repeated using the same test condition, temperature and
time. Devices shall be cooled to less than 10°C of their power stable condition at room temperature prior to the
removal of bias, except that the interruption of bias for up to one minute for the purpose of moving the devices to
cool-down positions shall not be considered removal of bias. All specified 25°C electrical measurements shall be
completed prior to any reheating of the device(s).
METHOD 1005.11
22 February 2017
3
MIL-STD-883-1
3.3.3 Test setup monitoring. The test setup shall be monitored at the test temperature initially and at the
conclusion of the test to establish that all devices are being stressed to the specified requirements. The following is
the minimum acceptable monitoring procedure:
a. Device sockets. Initially and at least each 6 months thereafter, (once every 6 months or just prior to use if
not used during the 6 month period) each test board or tray shall be checked to verify continuity to
connector points to assure that bias supplies and signal information will be applied to each socket. Board
capacitance or resistance required to ensure stability of devices under test shall be checked during these
initial and periodic verification tests to ensure they will perform their proper function (i.e., that they are not
open or shorted). Except for this initial and periodic verification, each device or device socket does not
have to be checked; however, random sampling techniques shall be applied prior to each time a board is
used and shall be adequate to assure that there are correct and continuous electrical connections to the
devices under test.
b. Connectors to test boards or trays. After the test boards are loaded with devices, inserted into the oven,
and brought up to at least 125°C or the specified test temperature, whichever is less, each required test
voltage and signal condition shall be verified in at least one location on each test board or tray so as to
assure electrical continuity and the correct application of specified electrical stresses for each connection
or contact pair used in the applicable test configuration. This may be performed by opening the oven for a
maximum of 10 minutes. When the test conditions are checked at a test socket, contact points on the
instrument used to make this continuity check shall be equal to or smaller dimensions than the leads
(contacts) of the devices to be tested and shall be constructed such that the socket contacts are not
disfigured or damaged.
c. At the conclusion of the test period, prior to removal of devices from temperature and test conditions, the
voltage and signal condition verification of b. above shall be repeated.
d. For class level S devices, each test board or tray and each test socket shall be verified prior to test to
assure that the specified test conditions are applied to each device. This may be accomplished by
verifying the device functional response at each device output(s). An approved alternate procedure may
be used.
Where failures or open contacts occur which result in removal of the required test stresses for any period of the
required test duration (see 3.1), the test time shall be extended to assure actual exposure for the total minimum
specified test duration. Any loss(es) or interruption(s) of bias in excess of 10 minutes total duration whether or not
the chamber is at temperature during the final 24 hours of life test shall require extension of the test duration for an
uninterrupted 24 hours minimum, after the last bias interruption.
METHOD 1005.11
22 February 2017
4
MIL-STD-883-1
3.4 Test sample. The test sample shall be as specified (see 4). When this test method is employed as an add-on
life test for a series or family of device types, lesser quantities of any single device type may be introduced in any
single addition to the total sample quantity, but the results shall not be considered valid until the minimum sample
size for each device has been accumulated. Where all or part of the samples previously under test are extracted
upon addition of new samples, the minimum sample size for each type shall be maintained once that level is initially
reached and no sample shall be extracted until it has accumulated the specified minimum test hours (see 3.1).
3.5 Test conditions.
3.5.1 Test condition A, steady-state, reverse bias. This condition is illustrated on figure 1005-1 and is suitable for
use on all types of circuits, both linear and digital. In this test, as many junctions as possible will be reverse biased to
the specified voltage.
3.5.2 Test condition B, steady-state, forward bias. This test condition is illustrated on figure 1005-1 and can be
used on all digital type circuits and some linear types. In this test, as many junctions as possible will be forward
biased as specified.
3.5.3 Test condition C, steady-state, power and reverse bias. This condition is illustrated on figure 1005-1 and can
be used on all digital type circuits and some linear types where the inputs can be reverse biased and the output can
be biased for maximum power dissipation or vice versa.
3.5.4 Test condition D, parallel excitation. This test condition is typically illustrated on figure 1005-2 and is suitable
for use on all circuit types. All circuits must be driven with an appropriate signal to simulate, as closely as possible,
circuit application and all circuits shall have maximum load applied. The excitation frequency shall not be less than
60 Hz.
3.5.5 Test condition E, ring oscillator. This test condition is illustrated on figure 1005-3, with the output of the last
circuit normally connected to the input of the first circuit. The series will be free running at a frequency established by
the propagation delay of each circuit and associated wiring and the frequency shall not be less than 60 Hz. In the
case of circuits which cause phase inversion, an odd number of circuits shall be used. Each circuit in the ring shall
be loaded to its rated maximum. While this condition affords the opportunity to continuously monitor the test for
catastrophic failures (i.e., ring stoppage), this shall not be considered acceptable as a substitute for the intermediate
measurements (see 3.3).
METHOD 1005.11
22 February 2017
5
MIL-STD-883-1
3.5.6 Test condition F, (class level B only) temperature-accelerated test. In this test condition, microcircuits are
subjected to bias(es) at an ambient test temperature (175°C to 300°C ) which considerably exceeds their maximum
rated temperature. At higher temperatures, it is generally found that microcircuits will not operate normally, and it is
therefore necessary that special attention be given to the choice of bias circuits and conditions to assure that
important circuit areas are adequately biased without damaging overstresses to other areas of the circuit. To
properly select the actual biasing conditions to be used, it is recommended that an adequate sample of devices be
exposed to the intended high temperature while measuring voltage(s) and current(s) at each device terminal to
assure that the specified circuit and the applied electrical stresses do not induce damaging overstresses.
At the manufacturer's option, alternate time and temperature values may be established from table I. Any
time-temperature combination which is contained in table I within the time limit of 30 to 1,000 hours may be used.
The life test ground rules of 3.5 of method 1016 shall apply to life tests conducted using test condition F. The applied
voltage at any or all terminals shall be equal to the voltage specified for the 125°C operating life in the applicable
acquisition document, unless otherwise specified.
If necessary, with the specific approval of the qualifying activity, the applied voltage at any or all terminal(s) may be
reduced to not less than 50 percent of the specified value(s) when it is demonstrated that excessive current flow or
power dissipation would result from operation at the specified voltage(s). If the voltage(s) is so reduced, the life test
duration shall be determined by the following formula:
to (100%)
Ta =
100% - V%
Where Ta is the adjusted total test duration in hours, to is the original test duration in hours, and V percent is the
largest percentage of voltage reduction made in any specified voltage.
3.5.6.1 Special considerations for devices with internal thermal limitation. For devices with internal thermal
shutdown, extended exposure at a temperature in excess of the shut-down temperature will not provide a realistic
indicator of long-term operating reliability. For such devices, measurement of the case temperature should be made
at the specified bias voltages at several different ambient temperatures. From these measurements, junction
temperatures should be computed, and the operating life shall be performed at that ambient temperature which, with
the voltage biases specified, will result in a worst case junction temperature at least 5°C but no more than 10°C
below the minimum junction temperature at which the device would go into thermal shutdown, and the test time shall
be determined from table I for the applicable device class level.
METHOD 1005.11
22 February 2017
6
MIL-STD-883-1
a. Special preconditioning, when applicable.
b. Test temperature, and whether ambient, junction, or case, if other than as specified in 3.2.
c. Test duration, if other than as specified in 3.1.
d. Test mounting, if other than normal (see 3).
e. Test condition letter.
f. End-point measurements and intermediate measurements (see 3.3).
g. Criteria for device failure for intermediate and end-point measurements (see 3.3), if other than device
specification limits, and criteria for lot acceptance.
h. Test sample (see 3.4).
i. Time to complete end-point measurements, if other than as specified (see 3.3).
j. Authorization for use of condition F and special maximum test rating for condition F, when applicable (see
4.b).
k. Time temperature conditions for condition F, if other than as specified in 3.5.6.
METHOD 1005.11
22 February 2017
7
MIL-STD-883-1
TABLE I. Steady-state time temperature regression. 1/ 2/ 3/ 4/
Minimum Minimum time (hours) Test

temperature condition
TA (°C ) (see 3.5)
Class level Class level Class level S
S B hybrids
(Class K)
100 7500 7500 Hybrid only
105 4500 4500 "
110 3000 3000 "
115 2000 2000 "
120 1500 1500 "
125 1000 1000 1000 A -E
130 900 704 --- "
135 800 496 --- "
140 700 352 --- "
145 600 256 --- "
150 500 184 --- "
175 40 --- F
180 32 --- "
185 31 --- "
190 30 --- "
1/ The higher temperatures indicated may only be used with the approval of the part
manufacturer. Manufacturers shall provide the qualifying activity with data to show
that the higher temperatures indicated do not damage the part being tested by
compromising the package integrity, e.g. lid seal, feedthroughs, etc.
2/ For condition F the maximum junction temperature is unlimited and care shall be
taken to ensure the device(s) does not go into thermal runaway.
3/ The only allowed conditions are as stated in the table above except for high power
devices (see 3.2.1.1).
4/ Test temperatures below 125°C may be used for hybrid circuits only.
METHOD 1005.11
22 February 2017
8
MIL-STD-883-1
FIGURE 1005-1. Steady-state.
FIGURE 1005-2. Typical parallel, series excitation.
NOTE: For free running counter, N is an odd number and the output of N is connected to the input of 1.
FIGURE 1005-3. Ring oscillator.
METHOD 1005.11
22 February 2017
9
MIL-STD-883-1
METHOD 1005.11
22 February 2017
10
MIL-STD-883-1
METHOD 1006
INTERMITTENT LIFE
1. PURPOSE. The intermittent life test is performed for the purpose of determining a representative failure rate for
microelectronic devices or demonstrating quality or reliability of devices subjected to the specified conditions. It is
intended for applications where the devices are exposed to cyclic variations in electrical stresses between the "on"
and "off" condition and resultant cyclic variations in device and case temperatures.
2. APPARATUS. See method 1005 of this standard.
3. PROCEDURE. The device shall be tested in accordance with all the requirements of method 1005 except that
all electrical stresses shall be alternately applied and removed. The "on" and "off" periods shall be initiated by
sudden, not gradual, application or removal of the specified electrical inputs (including signal and bias).
4. SUMMARY. In addition to the requirements of method 1005 of this standard, the following detail shall be
specified in the applicable acquisition document:
Frequency and duration of "on" and "off" cycles
METHOD 1006
1 May 1968
1
MIL-STD-883-1
METHOD 1006
1 May 1968
2
MIL-STD-883-1
METHOD 1007.1
AGREE LIFE
1. PURPOSE. The purpose of this test is to determine a representative failure rate for microelectronic devices or
to demonstrate quality or reliability of devices subjected to the specified conditions where test conditions include a
combination of temperature cycling, on-off electrical stressing and vibration to simulate as closely as possible actual
system applications and environments.
2. APPARATUS. The apparatus required shall be described in method 1005 of this standard except that the
temperature chambers shall be capable of following the specified test profile of figures 1 or 2 of MIL-HDBK-781 and
suitable equipment shall be provided to satisfy the requirements for vibration as specified.
3. PROCEDURE. This test shall be conducted in accordance with all the requirements of method 1005 of this
standard with the exceptions that temperature shall be cycled, periodic vibration shall be applied, and electrical
stresses shall be applied in on-off cycles where and as required in the specified test level of MIL-HDBK-781. Only
test levels E, F, G, H and J of MIL-HDBK-781 shall be considered acceptable as test conditions. Selection of the
temperature range should take into account the temperature rise associated with the devices under test.
Test conditions Test level Temperature range

for method 1007 in accordance with °C
MIL-HDBK-781
A E -54 to +55
B F -54 to +71
C G -54 to +95
D H -65 to +71
E J -54 to +125
F Test level F with 0 to +70
modified low
temperature
4. SUMMARY. In addition to the requirements of method 1005 of this standard, the following details shall be
specified in the applicable acquisition document:
a. Test condition (see 3).
b. Test profile, specify figure 1 or 2 MIL-HDBK-781 and specify on-time and transfer-times, as applicable.
c. Total on-time
METHOD 1007.1
7 June 2013
1
MIL-STD-883-1
METHOD 1007.1
7 June 2015
2
MIL-STD-883-1
METHOD 1008.2
STABILIZATION BAKE
1. PURPOSE. The purpose of this test is to determine the effect on microelectronic devices of storage at elevated
temperatures without electrical stress applied. This method may also be used in a screening sequence or as a
preconditioning treatment prior to the conduct of other tests. This test shall not be used to determine device failure
rates for other than storage conditions. It may be desirable to make end point and, where applicable, intermediate
measurements on a serialized device basis or on the basis of a histogram distribution by total sample in order to
increase the sensitivity of the test to parameter degradation or the progression of specific failure mechanisms with
time and temperature.
2. APPARATUS. The apparatus required for this test shall consist of a controlled temperature chamber capable of
maintaining the specified temperature and suitable electrical equipment to make the specified end point
measurements.
3. PROCEDURE. The device shall be stored at the specified ambient conditions for the specified time. The time
at high temperature shall be sufficient to allow the total mass of each device under test to reach the specified
temperature before the specified time duration begins. Within the time interval of 24 hours before (0 hours before test
durations less than 250 hours) to 72 hours after the specified duration of the test, the device shall be removed from
the specified ambient test condition and allowed to reach standard test conditions. When specified, end-point
measurements shall be completed within 96 hours after removal of device from the specified ambient test condition.
When specified (or at the manufacturer's discretion, if not specified) intermediate measurements shall be made at
intermediate points.
3.1 Test condition. The ambient test temperature shall be indicated by specifying a test condition letter from the
following table. The specified test temperature is the minimum actual ambient temperature to which all devices in the
working area of the chamber are exposed. This shall be assured by making whatever adjustments are necessary in
the chamber profile, loading, location of control or monitoring instruments, and the flow of air or other chamber
atmosphere. Therefore, calibration, shall be accomplished on the chamber in a fully, loaded, unpowered
configuration, and the indicator sensor located at, or adjusted to reflect, the coldest point in the working area. Unless
otherwise specified, test condition C minimum, with a minimum time duration and temperature as specified in table I,
shall apply. Unless otherwise specified, the test duration for all other test conditions shall be 24 hours minimum.
Test condition Temperature (minimum)
A 75°C
B 125°C
C See table I
D 200°C
E 250°C
F 300°C
G 350°C
H 400°C
METHOD 1008.2
25 August 1993
1
MIL-STD-883-1
TABLE I. Stabilization bake time temperature regression.
Minimum temperature Minimum time (hours)
°C Equivalent test condition C duration 1/
100 2/ 1,000
125 2/ 168
150 24
155 20
160 16
165 12
170 8
175 6
200 6
1/ The only allowed conditions are as stated above.

2/ These time-temperature combinations may be used for
hybrid microcircuits only.
a. Test condition letter if other than test condition C (see 3.1).
b. Test duration if other than 24 hours (see 3.1).
c. End point measurements, if applicable (see 3).
d. Intermediate measurements, if applicable (see 3).
e. Maximum test temperature rating, if applicable.
METHOD 1008.2
25 August 1993
2
MIL-STD-883-1
METHOD 1009.8
SALT ATMOSPHERE (CORROSION)
1. PURPOSE. This test is proposed as an accelerated laboratory corrosion test simulating the effects of seacoast
atmosphere on devices and package elements.
1.1 Terms and definitions.
1.1.1 Corrosion. Corrosion is the deterioration of coating or base metal or both by chemical or electrochemical
action.
1.1.2 Corrosion site. A corrosion site is the site at which the coating or base metal or both is corroded. The
location of corrosion.
1.1.3 Corrosion product (deposit). The effect of corrosion (i.e., rust or iron oxide, nickel oxide, tin oxide, etc.). The
product of corrosion may be at the corrosion site, or may flow or run (due to action of liquid carrier of salt) so as to
cover noncorroded areas.
1.1.4 Corrosion stain. Corrosion stain is a semitransparent deposit due to corrosion products.
1.1.5 Blister. A blister is a localized swelling and separation between the coating(s) and base metal.
1.1.6 Pinhole. A pinhole is a small hole occurring in the coating as an imperfection which penetrates entirely
through the coating.
1.1.7 Pitting. Pitting is the localized corrosion of coating or base metal or both, confined to a point or small area,
that takes the form of cavities.
1.1.8 Flaking. Flaking is the separation of small pieces of coating that exposes the base metal.
2. APPARATUS. Apparatus used in the salt-atmosphere test shall include the following:
a. Exposure chamber with fixtures for supporting devices. The chamber and all accessories shall be made of
material (glass, plastic, etc.) which will not affect the corrosiveness of the salt atmosphere. All parts within
the test chamber which come in contact with test specimens shall be of materials that will not cause
electrolytic corrosion. The chamber shall be properly vented to prevent pressure build-up and allow uniform
distribution of salt fog.
b. Salt solution reservoir adequately protected from the surrounding ambient. If necessary, auxiliary
reservoirs may be used for long duration tests in accordance with test conditions C and D (see 3.2).
c. Means for atomizing the salt solution, including suitable nozzles and compressed air or a 20 percent
oxygen, 80 percent nitrogen mixture (the gas entering the atomizers shall be free from all impurities such as
oil and dirt).
d. Chamber-heating means and controls.
e. Means for humidifying the air at temperature above the chamber temperature.
f. Air or inert gas dryer.
g. Magnifier(s) 1X to 3X, 10X to 20X and 30X to 60X.
METHOD 1009.8
22 March 1989
1
MIL-STD-883-1
3. PROCEDURE.
3.1 Maintenance and conditioning of test chamber. The purpose of the cleaning cycle is to assure that all
materials which could adversely affect the results of the subsequent tests are removed from the chamber. The
chamber shall be cleaned by operating it at 95°F ±5°F (35°C ±3°C) with deionized or distilled water as long as
necessary. The chamber shall be cleaned each time the salt solution in the reservoir has been used up. Several test
runs therefore could be run before cleaning, depending on the size of the reservoir and the specified test condition
(see 3.2). When long duration conditions (test conditions C and D, see 3.2) are required, the reservoir may be refilled
via auxiliary reservoirs so that the test cycle shall not be interrupted. After the cleaning cycle, on restarting the
chamber, the reservoir shall be filled with salt solution and the chamber shall be stabilized by operating it until the
temperature comes to equilibrium, see 3.1.4. If operation of the chamber is discontinued for more than one week, the
remaining salt solution, if any, shall be discarded. Cleaning shall then be performed prior to restarting the test
chamber. Intermittent operation of the chamber is acceptable provided the pH and concentration of the salt solution
are kept within limits defined in 3.1.1.
3.1.1 Salt solution. The salt concentration shall be 0.5 to 3.0 percent by weight in deionized or distilled water as
required to achieve the deposition rates required by 3.1.4. The salt used shall be sodium chloride containing on the
dry basis not more than 0.1 percent by weight of sodium iodide and not more than 0.3 percent by weight total
impurities. The pH of the salt solution shall be maintained between 6.5 and 7.2 when measured at 95°F ±5°F (35°C
±3°C). Only CP grade (dilute solution) hydrochloric acid or sodium hydroxide shall be used to adjust the pH.
3.1.2 Preconditioning of leads. Unless otherwise specified, the test specimens shall not be preconditioned. If
required (see 4.c.), prior to mounting specimens for the salt atmosphere test, the device leads shall be subjected to
the bending stress initial conditioning in accordance with test condition B1 of method 2004. Where the specific
sample devices being subjected to the salt atmosphere test have already been subjected to the required initial
conditioning, as part of another test employing the same sample devices, the lead bend need not be repeated.
3.1.3 Mounting of test specimens. The test specimens shall be mounted on the holding fixtures (plexiglass rods,
nylon or fiberglass screens, nylon cords, etc.) in accordance with the applicable orientation(s) below. Specimens
shall also be positioned so that they do not contact each other, so that they do not shield each other from the freely
settling fog, and so that corrosion products and condensate from one specimen does not fall on another.
a. Dual-in-line packages with leads attached to, or exiting from, package sides (such as side-brazed packages
and ceramic dual-in-line packages): Lid upward 15° to 45° from vertical. One of the package sides on
which the leads are located shall be oriented upward at an angle greater than or equal to 15° from vertical
(see figure 1009-1a).
b. Packages with leads attached to, or exiting from the opposite side of the lid (such as TO cans, solid
sidewall packages, and metal platform packages): Lid 15° to 45° from vertical. One-half of the samples
shall be tested with the lid upward; the remaining samples shall be tested with the leads upward (see figure
1009-1b). For packages with leads attached to, or exiting from the same side as the lid, only one
orientation (lid and leads upward) is required.
c. Packages with leads attached to, or exiting from package sides, parallel to the lid (such as flatpacks): Lid
15° to 45° from vertical. One of the package sides on which the leads are located shall be oriented upward
at an angle greater than or equal to 15° from vertical. For packages with a metal case, one-half of the
samples shall be tested with the lid upward; the remaining samples shall be tested with the case upward.
All other packages shall be tested with the lid upward (see figure 1009-1c).
d. Leadless and leaded chip carriers: Lid 15° to 45° from vertical. One-half of the samples shall be tested with
the lid upward; the remaining samples shall be tested with the lid downward (see figure 1009-1d).
e. Flat specimens (e.g., lids only and lead frames only): 15° to 45° from vertical.
METHOD 1009.8
22 March 1989
2
MIL-STD-883-1
NOTE: In cases where two orientations are required for testing, the specified sample size shall be divided in half
(or as close to one-half as possible). In all cases, inspections following the test in accordance with 3.4 shall
be performed on all package surfaces.
NOTE: Precautions may be used to prevent light induced photovoltaic electrolytic effects when testing windowed
UV erasable devices.
3.1.4 Chamber operation. After conditioning of test chamber in accordance with 3, a salt fog having a temperature
of 95°F minimum (35°C minimum) shall be passed through the chamber for the specified test duration (see 3.2). The
exposure zone of the chamber shall be maintained at a temperature of 95°F ±5°F (35°C ±3°C). The fog
concentration and velocity shall be so adjusted that the rate of salt deposit in the test area is between 20,000 and
50,000 mg/m2/24 hours. Rate of salt deposit may be determined by either volumetric, gravimetric, or other
techniques at the user's option. The salt solution collecting at the bottom of the chamber shall be discarded.
3.2 Length of test. The minimum duration of exposure of the salt atmosphere test shall be specified by indicating a
test condition letter from the following table. Unless otherwise specified, test condition A shall apply:
Test condition Length of test
A 24 hours
B 48 hours
C 96 hours
D 240 hours
3.3 Preparation of specimens for examination. Upon completion of the salt exposure test, the test specimens shall
be immediately washed with free flowing deionized water (not warmer than 100°F (38°C) for at least 5 minutes to
remove salt deposits from their surface after which they shall be dried with air or inert gas, and subjected to the
inspections below.
3.4 Failure criteria. All inspections shall be performed at a magnification of 10X to 20X, unless otherwise specified
in this procedure (see 3.4.1b and 3.4.1c).
NOTES:
1. Corrosion stains shall not be considered as part of the defective area of 3.4.1a.
2. Corrosion products resulting from lead corrosion that deposit onto areas other than the lead shall not be
considered as part of the defective area of 3.4.1a.
3. Corrosion at the tips of the leads and corrosion products resulting from such corrosion shall be disregarded.
4. Portions of leads which cannot be further tested in accordance with 3.4.1b, due to geometry or design (such
as standoffs on pin grid arrays or the brazed portion of leads on side-brazed packages), shall be subject to
the failure criteria of 3.4.1a.
3.4.1 Finished product. No device is acceptable that exhibits:
a. Corrosion defects over more than 5 percent of the area of the finish or base metal of any package element
other than leads such as lid, cap, or case. Corrosion defects to be included in this measurement are:
Pitting, blistering, flaking, and corrosion products. The defective area may be determined by: Comparison
with charts or photographs of known defective areas (see figure 1009-2), direct measurement using a grid
or similar measuring device, or image analysis.
METHOD 1009.8
22 March 1989
3
MIL-STD-883-1
b. Leads missing, broken, or partially separated. In addition, any lead which exhibits pinholes, pitting,
blistering, flaking, corrosion product that completely crosses the lead, or any evidence of pinholes, pitting,
blistering, flaking, corrosion product, or corrosion stain at the glass seal shall be further tested as follows:
Bend the lead through 90° at the point of degradation in such a manner that tensile stress is applied to
the defect region. Any lead which breaks or shows fracture of the base metal through greater than 50
percent of the cross-sectional area of the lead shall be considered a reject. In the case of multiple
defects the bend shall be made at the site exhibiting the worst case corrosion. On packages
exhibiting defects on more than ten leads, bends shall be made on a maximum of ten leads exhibiting
the worst case corrosion. The examination of the fracture shall be performed with a magnification of
30X to 60X.
c. Specified markings, which are missing in whole or in part, faded, smeared, blurred, shifted, or dislodged to
the extent that they are not legible. This examination shall be conducted with normal room lighting and with
a magnification of 1X to 3X.
3.4.2 Package elements. When this test is performed on package elements or partially assembled packages
during incoming inspection or any time prior to completion of package assembly as an optional quality control gate or
as a required test (see 4.d), no part is acceptable that exhibits:
a. Corrosion defects over more than 1.0 percent of the area of the finish or base metal of lids or over more
than 2.5 percent of the area of the finish or base metal of any other package element other than leads (such
as case). Corrosion on areas of the finish or base metal that will not be exposed to surrounding ambient
after device fabrication shall be disregarded. This inspection shall be performed according to the procedure
in 3.4.1a.
b. Leads with final lead finish that are rejectable in accordance with 3.4.1b.
a. Test duration, if other than test condition A (see 3.2).
b. Measurements and examinations after test, when applicable for other than visual (see 3.4).
c. Requirement for preconditioning, if applicable, and procedure if other than in 3.1.2.
d. Requirement for incoming inspection of package elements or partially assembled packages (see 3.4.2),
when applicable.
METHOD 1009.8
22 March 1989
4
MIL-STD-883-1
FIGURE 1009-1a. Dual-in-line packages with leads attached to, or exiting from
package sides (such as side-brazed packages and ceramic dual-
in-line packages):
FIGURE 1009-1b. Packages with leads attached to, or exiting from opposite
sides of lids (such as TO cans, solid sidewall packages,
metal platform packages, and pin grid arrays):
1. TO cans:
a. Expose one-half of samples with caps upward:
b. Expose other one-half of samples with leads upward:
FIGURE 1009-1. Example sample orientations.

METHOD 1009.8
22 March 1989
5
MIL-STD-883-1
2. Solid sidewall packages, metal platform packages, and pin grid arrays:
a. Expose one-half of samples with lids upward:
b. Expose other one-half of samples with leads upward:
FIGURE 1009-1c. Packages with leads attached to, or exiting from

package sides, parallel to lid (such as flatpacks):
NOTE: If the case is metal, one-half of the samples shall be tested with the lids
exposed upward, the other one-half with the cases exposed upward.
FIGURE 1009-1. Example sample orientations - Continued.
METHOD 1009.8
22 March 1989
6
MIL-STD-883-1
FIGURE 1d. Leadless or leaded chip carriers:
1. Expose one-half of samples with lids upward:
2. Expose other one-half of samples with lids downward:
FIGURE 1009-1. Example sample orientations - Continued.
METHOD 1009.8
22 March 1989
7
MIL-STD-883-1
FIGURE 1009.2. Corrosion area charts.
METHOD 1009.8
22 March 1989
8
MIL-STD-883-1
METHOD 1010.9
TEMPERATURE CYCLING
1. PURPOSE. This test is conducted to determine the resistance of a part to extremes of high and low
temperatures, and to the effect of alternate exposures to these extremes.
1.1.1 Load. The specimens under test and the fixtures holding those specimens during the test. Maximum load
shall be determined by using the worst case load temperature with specific specimen loading. Monolithic (single
block) loads used to simulate loading may not be appropriate when air circulation is reduced by load configuration.
The maximum loading must meet the specified conditions.
1.1.2 Monitoring sensor. The temperature sensor that is located within the oven’s working zone and is used, in
conjunction with the Profile Data, to ensure testing is performed in accordance with temperature requirements.
1.1.3 Worst case load temperature. The temperature of specific specimens or equivalent mass as indicated by
thermocouples imbedded in their bodies. These indictor specimens shall be located at the center and at each corner
of the load. The worst case load temperature (point which reaches temperature last) is determined at periodic
intervals.
1.1.4 Working zone. The volume in the chamber(s) in which the temperature of the load is controlled within the
limits specified in table I.
1.1.5 Specimen. The device or individual piece being tested.
1.1.6 Transfer time. The elapsed time between initiation of load transition (for a single chamber or specimen
removal for multiple chambers) from one temperature extreme and introduction into the other temperature.
1.1.7 Maximum load. The largest load for which the worst case load temperature meets the timing requirements.
1.1.8 Dwell time. The time from introduction of the load to one extreme environment temperature until the initiation
of the transfer to the other extreme temperature environment.
1. APPARATUS. The chamber(s) used shall be capable of providing and controlling the specified temperatures in
the working zone(s) when the chamber is loaded with a maximum load. The thermal capacity and air
circulation must enable the working zone and loads to meet the specified conditions and timing (see 3.1).
Worst case load temperature shall be continually monitored during test by indicators or recorders. Direct heat
conduction to specimens shall be minimized.
2.1 Temperature Monitoring Sensor. For systems that meet the worst case load temperature periodic profiling /
characterization, it is acceptable to locate the monitoring sensor in any location within the profile area.
3. PROCEDURE. Specimens shall be placed in such a position with respect to the airstream that there is
substantially no obstruction to the flow of air across and around the specimen. When special mounting is required, it
shall be specified. The specimen shall then be subjected to the specified condition for the specified number of
cycles performed continuously. This test shall be conducted for a minimum of 10 cycles using test condition C (see
Figure 1010-1). One cycle consists of steps 1 and 2 or the applicable test condition and must be completed without
interruption to be counted as a cycle. Completion of the total number of cycles specified for the test may be
interrupted for the purpose of test chamber loading or unloading of device lots or as the result of power or equipment
failure. However, if the number of interruptions for any reason exceeds 10 percent of the total number of cycles
specified, the test must be restarted from the beginning.
METHOD 1010.9
25 April 2016
1
MIL-STD-883-1
3.1 Timing. The total transfer time from hot to cold or from cold to hot shall not exceed one minute (for multiple
chambers). The load may be transferred when the worst case load temperature is within the limits specified in table I.
However, the dwell time shall not be less than 10 minutes and the load shall reach the specified temperature within
15 minutes (16 minutes for single chamber).
TABLE I. Temperature-cycling test conditions.
Test condition temperature (°C)
Step Minutes A B C D E F
1 >10 -55 +0 -55 +0 -65 +0 -65 +0 -65 +0 -65 +0

Cold -10 -10 -10 -10 -10 -10
2 >10 85 +10 125 +15 150 +15 200 +15 300 +15 175 +15
Hot -0 -0 -0 -0 -0 -0
NOTE: Steps 1 and 2 may be interchanged. The load temperature may exceed the
+ or - zero (0) tolerance during the recovery time. Other tolerances shall
not be exceeded.
3.2 Examination. After completion of the final cycle, an external visual examination of the marking shall be
performed without magnification or with a viewer having a magnification no greater than 3X. A visual examination of
the case, leads, or seals shall be performed at a magnification between 10X and 20X (except the magnification for
examination shall be 1.5X minimum when this method is used for 100 percent screening). This examination and any
additional specified measurements and examination shall be made after completion of the final cycle or upon
completion of a group, sequence, or subgroup of tests which include this test.
3.3 Failure criteria. After subjection to the test, failure of one or more specified end-point measurements or
examinations (see 4.d.), evidence of defects or damage to the case, leads, or seals or illegible markings shall be
considered a failure. Damage to the marking caused by fixturing or handling during tests shall not be cause for
device rejection.
a. Special mounting, if applicable (see 3).
b. Test condition letter, if other than test condition C (see 3).
c. Number of test cycles, if other than 10 cycles (see 3).
d. End-point measurements and examinations (see 3.1) (e.g., end-point electrical measurements, seal test
(method 1014), or other acceptance criteria).
METHOD 1010. 9
25 April 2016
2
MIL-STD-883-1
Figure 1010-1 An example of Temperature Cycling Test Condition C.
METHOD 1010.9
25 April 2016
3
MIL-STD-883-1
METHOD 1010. 9
25 April 2016
4
MIL-STD-883-1
METHOD 1011.9
THERMAL SHOCK
1. PURPOSE. The purpose of this test is to determine the resistance of the part to sudden exposure to extreme
changes in temperature and the effect of alternate exposures to these extremes.
1.1.1 Cycle. A cycle consists of starting at ambient room temperature, proceeding to step 1, then to step 2, or
alternately proceeding to step 2, then to step 1, and then back to ambient room temperature without interruption.
1.1.2 Dwell time. The total time the load is immersed in the bath.
1.1.3 Load. The devices under test and the fixture holding these devices.
1.1.4 Maximum load. The maximum mass of devices and fixtures that can be placed in the bath while maintaining
specified temperatures and times.
1.1.5 Specimen. The device or individual piece being tested.
1.1.6 Transfer time. The elapsed time measured from removal of the load from one bath until insertion in the other
bath.
1.1.7 Worst case load temperature. The body temperature of a specific device located at the center of the load.
1.1.8 Monitoring sensor. The temperature sensor that is located and calibrated so as to indicate the same
temperature as at the worst case indicator specimen location. The worst case indicator specimen location is
identified during the periodic characterization of the worst case load temperature.
2. APPARATUS. The baths used shall be capable of providing and controlling the specified temperatures in the
working zone(s) when the bath is loaded with a maximum load. The thermal capacity and liquid circulation must
enable the working zone and loads to meet the specified conditions and timing (see 3.1). Worst case load
temperature shall be continually monitored during test by indicators or recorders reading the monitoring sensor(s).
The worst case load temperature under maximum load conditions and configuration shall be verified as needed to
validate bath performance. Perfluorocarbons that meet the physical property requirements of table II shall be used
for conditions B and C.
3. PROCEDURE. Specimens shall be placed in the bath in a position so that the flow of liquid across and around
them is substantially unobstructed. The load shall then be subjected to condition B or as otherwise specified (see 4b)
of table I for a duration of 15 cycles. Completion of the total number of cycles specified for the test may be
interrupted for the purpose of loading or unloading of device lots or as the result of power or equipment failure.
However, if the number of interruptions for any given test exceeds 10 percent of the total number of cycles specified,
the test must be restarted from the beginning.
3.1 Timing. The total transfer time from hot to cold or from cold to hot shall not exceed 10 seconds. The load may
be transferred when the worst case load temperature is within the limits specified in table I. However, the dwell time
shall be not less than 2 minutes and the load shall reach the specified temperature within 5 minutes.
METHOD 1011.9
27 July 1990
1
MIL-STD-883-1
3.2 Examination. After completion of the final cycle, an external visual examination of the marking shall be
performed without magnification or with a viewer having a magnification no greater than 3X and a visual examination
of the case, leads, or seals shall be performed at a magnification between 10X and 20X except the magnification for
examination shall be 1.5X minimum when this method is used for 100 percent screening. This examination and any
additional specified measurements and examination shall be made after completion of the final cycle or upon
completion of group, sequence, or subgroup of tests which include this test.
3.3 Failure criteria. After subjection to the test, failure of any specified end-point measurements or examinations
(see 4d), evidence of defects or damage to the case, leads, or seals, or illegible markings shall be considered a
failure. Damage to marking caused by fixturing or handling during tests shall not be cause for device rejection.
TABLE I. Thermal shock temperature tolerances and suggested fluids. 1/
Test A B C
conditions
Temperature Temperature Temperature
Step 1 Temperature 100 +10 125 +10 150 +10

tolerance, °C -2 -0 -0
Recommended Water 2/ Perfluorocarbon Perfluorocarbon
fluid 3/ 3/
Step 2 Temperature -0 +2 -55 +0 -65 +0
tolerance, °C -10 -10 -10
Recommended Water 2/ Perfluorocarbon Perfluorocarbon
fluid 3/ 3/
1/ Ethylene glycol shall- not be used as a thermal shock test fluid.

2/ Water is indicated as an acceptable fluid for this temperature
range. Its suitability chemically shall be established prior
to use. When water is used as the fluid for condition A and the
specified temperature tolerances are insufficient due to
altitude considerations, the following alternate test conditions
may be used:
a. Temperature: 100°C -6°C, 0°C +6°C.
b. Cycles shall be increased to 20.
3/ Perfluorocarbons contain no chlorine or hydrogen.
METHOD 1011.9
27 July 1990
2
MIL-STD-883-1
TABLE II. Physical property requirements of perfluorocarbon fluids. 1/
Test condition B C ASTM

test
method
Step 1 Boiling point, °C >125 >150 D1120
Density at 25°C gm/ml >1.6

Dielectric strength >300 D877
volts/mil
Residue, microgram/gram <50 D2109
Appearance Clear, colorless liquid Not applicable
Step 2 Density at 25°C gm/ml >1.6
Dielectric strength >300 D877
volts/mil
Residue, micrograms/gram <50 D2109
Appearance Clear, colorless liquid Not applicable
1/ The perfluorocarbon used shall have a viscosity less than or equal to

the thermal shock equipment manufacturer's recommended viscosity at the
minimum temperature.
a. Special mounting, if applicable.
b. Test condition, if other than test condition B (see 3).
c. Number of test cycles, if other than 15 cycles (see 3).
d. End-point measurements and examinations (e.g., end-point electrical measurements, seal test (method
1014), or other acceptance criteria).
METHOD 1011.9
27 July 1990
3
MIL-STD-883-1
METHOD 1011.9
27 July 1990
4
MIL-STD-883-1
METHOD 1012.1
THERMAL CHARACTERISTICS
1. PURPOSE. The purpose of this test is to determine the thermal characteristics of microelectronic devices. This
includes junction temperature, thermal resistance, case and mounting temperature and thermal response time of the
microelectronic devices.
1.1 Definitions. The following definitions and symbols shall apply for the purpose of this test:
a. Case temperature, TC, in °C. The case temperature is the temperature at a specified accessible reference
point on the package in which the microelectronic chip is mounted.
b. Mounting surface temperature, TM, in °C. The mounting surface temperature is the temperature of a
specified point at the device-heat sink mounting interface (or primary heat removal surface).
c. Junction temperature, TJ, in °C. The term is used to denote the temperature of the semiconductor junction
in the microcircuit in which the major part of the heat is generated. With respect to junction temperature
measurements, TJ(Peak) is the peak temperature of an operating junction element in which the current
distribution is nonuniform, TJ(Avg) is the average temperature of an operating junction element in which the
current distribution is nonuniform, and TJ(Region) is the temperature in the immediate vicinity within six
equivalent radii (an equivalent radius is the radius of a circle having the same area as contained in a
junction interface area) of an operating junction. In general TJ(Region) <TJ(Avg) <TJ(Peak). If the current
distribution in an operating junction element is uniform then TJ(Avg) < TJ(Peak).
d. Thermal resistance, junction to specified reference point, RJR, in °C/W. The thermal resistance of the
microcircuit is the temperature difference from the junction to some reference point on the package divided
by the power dissipation PD.
e. Power dissipation, PD, in watts, is the power dissipated in a single semiconductor test junction or in the total
package, PD(Package).
f. Thermal response time, tJR, in seconds, is the time required to reach 90 percent of the final value of junction
temperature change caused by the application of a step function in power dissipation when the device
reference point temperature is held constant. The thermal response time is specified as tJR(Peak), tJR(Avg), or
tJR(Region) to conform to the particular approach used to measure the junction temperature.
g. Temperature sensitive parameter, TSP, is the temperature dependent electrical characteristic of the
junction-under test which can be calibrated with respect to temperature and subsequently used to detect
the junction temperature of interest.
2. APPARATUS. The apparatus required for these tests shall include the following as applicable to the specified
test procedures.
a. Thermocouple material shall be copper-constantan (type T) or equivalent, for the temperature range -180°C
to +370°C. The wire size shall be no larger than AWG size 30. The junction of the thermocouple shall be
welded to form a bead rather than soldered or twisted. The accuracy of the thermocouple and associated
measuring system shall be ±0.5°C.
b. Controlled temperature chamber or heat sink capable of maintaining the specified reference point
temperature to within ±0.5°C of the preset (measured) value.
METHOD 1012.1
4 November 1980
1
MIL-STD-883-1
c. Suitable electrical equipment as required to provide controlled levels of conditioning power and to make the
specified measurements. The instrument used to electrically measure the temperature-sensitive parameter
shall be capable of resolving a voltage change of 0.5 mV. An appropriate sample-and-hold unit or a
cathode ray oscilloscope shall be used for this purpose.
d. Infrared microradiometer capable of measuring radiation in the 1 to 6 micrometer range and having the
ability to detect radiation emitted from an area having a spatial resolution of less than 40 micrometers (1.6
mils) diameter at its half power points and a temperature resolution (detectable temperature change) of
0.5°C at 60°C.
NOTE: May be a scanning IR microradiometer.
e. A typical heat sink assembly for mounting the microelectronic device-under test is shown on figure 1012-1.
The primary heat sink is water cooled and has a thermocouple sensor for inlet and outlet water temperature
as shown in Figure 1012-1.
An adapter heat sink, as shown on Figure 1012-1 is fastened to the top surface of the primary heat sink, and has a
special geometry to handle specific size packages, e.g., flat packs, dual-in-line packages (small and large size) and
TO-5 cans. This adapter provides a fairly repeatable and efficient interface between the package and the heat sink;
the heat sink temperature is determined from a thermocouple peened into the underside of the adapter-near the
package.
The adapter also contains the socket or other electrical interconnection scheme. In the case of the flat pack adapter
heat sink, the package is dropped into a special slotted printed circuit board (PCB) to register the leads with runs on
the PCB; toggle clamps then provide a pressure contact between the package leads and the PCB runs. Dual-in-line
and axial lead packages plug into a regular socket.
The thermal probe assembly is shown on Figure 1012-1. In practice, the pressure adjustment cap is adjusted so the
disk at the probe tip contacts the bottom surface of the package (chip carrier) with a predetermined force. A silicone
grease (about 25-50 mm thick) is used at this interface to provide a reliable thermal contact.
3. PROCEDURE.
3.1 Direct measurement of reference point temperature, TC or TM. For the purpose of measuring a microelectronic
device thermal resistance or thermal response time, the reference point temperature shall be measured at the
package location of highest temperature which is accessible from outside the package. In general, that temperature
shall be measured on the surface of the chip carrier directly below the chip. The location selected shall be as near
the chip as possible and representative of a temperature in the major path of heat flow from the chip to the heat sink.
The surface may be altered to facilitate this measurement provided that such alteration does not affect the original
heat transfer paths and, hence, the thermal resistance, within the package by more than a few percent.
3.1.1 Case temperature, TC. The microelectronic device under test shall be mounted on a temperature controlled
heat sink so that the case temperature can be held at the specified value. A thermocouple shall be attached as near
as possible to the center of the bottom of the device case directly under the chip or substrate. A conducting epoxy
may be used for this purpose. In general, for ambient cooled devices, the case temperature should be measured at
the spot with the highest temperature. The thermocouple leads should be electrically insulated up to the welded
thermocouple bead. The thermocouple bead should be in direct mechanical contact with the case of the
microelectronic device under test.
3.1.2 Mounting surface temperature, TM. The mounting surface temperature is measured directly below the
primary heat removal surface of the case. It is measured with a thermocouple at or near the mounting surface of the
heat sink. A typical mounting arrangement is shown on figure 1012-2. The surface of the copper mounting base
shall be nickel plated and free of oxides.
METHOD 1012.1
4 November 1980
2
MIL-STD-883-1
The thermocouple hole shall be drilled into the mounting base such that the thermocouple lead is directly below the
area on the case of interest. It is recommended that the thermocouple be secured into the mounting base with a
thermal conducting adhesive (or solder) and that particular attention be paid to minimizing air voids around the ball of
the thermocouple. A thermal conducting compound (or adhesive) should be used at the interface of the mounting
base and the device under test.
3.2 Thermal resistance, junction to specified reference point, RJR.
3.2.1 General considerations. The thermal resistance of a semiconductor device is a measure of the ability of its
carrier or package and mounting technique to provide for heat removal from the semiconductor junction.
The thermal resistance of a microelectronic device can be calculated when the case temperature and power
dissipation in the device, and a measurement of the junction temperature are known. The junction with the greatest
power dissipation density (watts/mm2) shall be selected for measurement since that junction will generally have the
highest temperature on the chip. If the leads to that junction are not accessible and another junction is measured
then it cannot be assured that the highest temperature on the chip will be measured. Direct measurement should be
used in this case.
When making the test measurements indicated below, the package shall be considered to have achieved thermal
equilibrium when the measured temperature difference, junction to case, reaches approximately 99 percent of its final
value. The temperature difference at that time will change at a rate less than
d(TJ - TC) < 0.03 (TJ - TC)

dt t
where t is the time after application of a power dissipation increment. The total time required for stabilization will
typically be less than a minute.
METHOD 1012.1
4 November 1980
3
MIL-STD-883-1
3.2.2 Direct measurement of junction temperature for determination of RJR. The junction temperature of the
thermally limiting element within the semiconductor chip can be measured directly using an infrared microradiometer.
The cap or lid shall first be removed from the package to expose the active chip or device. The cavity shall not be
covered with any IR transparent material unless the chip is extremely large and has an extremely poor heat
conduction path to the chip carrier. The location of the junction to be measured should be referenced to a coordinate
system on the chip so it can be relocated after coating the chip. The active area of the chip shall be coated uniformly
with a thin layer (25-50 m thick) of a known high emissivity ( > 0.8), low thermal conductivity material such as black
pigmented lacquer. The package shall then be placed on a temperature controlled heat sink and the case or
mounting surface temperature stabilized at the specified value. The microelectronic device under test shall then be
operated at its rated power dissipation, the infrared microscope crosshairs focused on the junction and scanned back
and forth slightly at that location to maximize the radiance measurement. That radiance measurement and the chip
carrier temperature shall then be recorded. The power to the test package shall then be turned off and the chip
carrier allowed to return to the specified case or mounting surface temperature. The emissivity of the coating over
the junction region shall then be measured and the radiance from the operating junction region shall be converted to
temperature using this emissivity value. (Note that this method assumes the emissivity of the coating material does
not change appreciably with temperature. This assumption shall be valid if the results are to be accurate and
repeatable.)
If the junction to be measured is not specified then the test shall proceed as above except that the IR microscope
crosshairs shall be scanned over the whole active area of the chip to find and maximize the radiance measurement at
the highest temperature junction region.
The minimum width or length of the junction area shall be greater than 5 times the half power diameter of the
objective lens and greater than 5 times the thickness of the coating on the chip surface if this method is used to
measure TJ(Peak). For junction element diameters between 5 and 1 times the half power diameter of the IR
microscope objective lens, some average junction temperature TJ(Avg), where TJ(Region) < TJ(Avg) < TJ(Peak), will be
measured.
METHOD 1012.1
4 November 1980
4
MIL-STD-883-1
The following data shall be recorded for this test condition:
a. Peak or average junction temperature, TJ(Peak) or TJ(Avg).
b. Case or mounting surface temperature (usually 60°C ±0.5°C TC, TM).
c. Power dissipation, PD(Package), in the package.
d. Reference temperature measuring point.
e. Mounting arrangement.
f. Half power "spot" size of the IR microscope.
g. Thickness of the emissivity control coating (for TJ(Avg) measurements only).
h. Minimum width or length of the junction measured (for TJ(Avg) measurements only).
3.2.3 Indirect measurements of junction temperature for the determination of RJR. The purpose of the test is to
measure the thermal resistance of integrated circuits by using particular semiconductor elements on the chip to
indicate the device junction temperature.
In order to obtain a realistic estimate of the operating average junction temperature, TJ(Avg), the whole chip or chips in
the package should be powered in order to provide the proper internal temperature distribution. For other purposes
though (see section 3.2.1), the junction element being sensed need only be powered. During measurement of the
junction temperature the chip heating current shall be switched off while the junction calibration current remains
stable. It is assumed that the calibration current will not affect the circuit operation; if so, then the calibration current
must be switched on as the power is switched off.
The temperature sensitive device parameter is used as an indicator of an average junction temperature of the
semiconductor element for calculations of thermal resistance. The measured junction temperature is indicative of the
temperature only in the immediate vicinity of the element used to sense the temperature. Thus, if the junction
element being sensed is also dissipating power with a uniform heating current distribution, then TJ(Avg)  TJ(Peak) for
that particular junction element. If the current distribution is not uniform then TJ(Avg ) is measured. If the junction
element being sensed is in the immediate vicinity of the element dissipating power then TJ(Region) will be measured.
The heating power does not have to be switched off when TJ(Region) is measured.
The temperature sensitive electrical parameters generally used to indirectly measure the junction temperature are the
forward voltage of diodes, and the emitter-base and the collector-base voltages of bipolar transistors. Other
appropriate temperature sensitive parameters may be used for indirectly measuring junction temperature for
fabrication technologies that do not lend themselves to sensing the active junction voltages. For example, the
substrate diode(s) in junction-isolated monolithic integrated circuits can be used as the temperature sensitive
parameter for measurements of TJ(Region). In this particular case though, the heating power has to be switched off at
the same time that the substrate diode is forward biased.
METHOD 1012.1
4 November 1980
5
MIL-STD-883-1
3.2.3.1 Switching techniques for measuring TJ(Avg). The following symbols shall apply for the purpose of these
measurements:
IM - - - - - - - - - - - - - - - - Measuring current in milliamperes.
VMD - - - - - - - - - - - - - - - Value of temperature-sensitive parameter in millivolts, measured at IM, and

corresponding to the temperature of the junction heated by PD.
TMC - - - - - - - - - - - - - - - Calibration temperature in °C, measured at the reference point.
VMC - - - - - - - - - - - - - - - Value of temperature-sensitive parameter in millivolts, measured at IM and

specific value of TMC.
The measurement of TJ(Avg) using junction forward voltage as the TSP is made in the following manner:
Step 1 - Measurement of the temperature coefficient of the TSP (calibration).
The coefficient of the temperature sensitive parameter is generated by measuring the TSP as a function of the
reference point temperature, for a specified constant measuring current, IM, and collector voltage, by externally
heating the device under test in an oven or on a temperature controlled heat sink. The reference point temperature
range used during calibration shall encompass the temperature range encountered in the power application test (see
step 2). The measuring current is generally chosen such that the TSP decreases linearly with increasing temperature
over the range of interest and that negligible internal heating occurs during the measuring interval. A measuring
current ranging from 0.05 to 5 mA is generally used, depending on the rating and operating conditions of the device
under test, for measuring the TSP. The value of the TSP temperature coefficient, V MC/TMC, for the particular
measuring current and collector voltage used in the test, is calculated from the calibration curve, VMC versus TMC.
Step 2 - Power application test.
The power application test is performed in two parts. For both portions of the test, the reference point temperature is
held constant at a preset value. The first measurement to be made is that of the temperature sensitive parameter,
i.e., V MC, under operating conditions with the measuring current, IM, and the collector voltage used during the
calibration procedure. The microelectronic device under test shall then be operated with heating power (PD)
intermittently applied at greater than or equal to 99 percent duty factor. The temperature- sensitive parameter VMD
shall be measured during the interval between heating pulses (<100 s) with constant measuring current, IM, and the
collector voltage that was applied during the calibration procedure (see step 1).
Because some semiconductor element cooling occurs between the time that the heating power is removed and the
time that the temperature-sensitive parameter is measured, VMD may have to be extrapolated back to the time where
the heating power was terminated by using the following mathematical expression which is valid for the first 100 s of
cooling:
VMD (t = 0) = VMD1 + VMD2 - VMD1

t11/2
1/2 1/2
t1 - t2
Where:
VMD(t = 0) = TSP, in millivolts, extrapolated to the time at which

the heating power is terminated,
t = Delay time, in microseconds, after heating power is terminated,
VMD1 = TSP, in millivolts, at time t = t1, and
VMD2 = TSP, in millivolts, at time t = t2 < t1.
METHOD 1012.1
4 November 1980
6
MIL-STD-883-1
If VMD(t) versus t1/2 is plotted on linear graph paper for the first 100 s of cooling, the generated curve will be a
straight line except during the initial portion where nonthermal switching transients dominate. The time t2 is the
minimum time at which the TSP can be measured as determined from the linear portion of the V MD(t) versus t1/2
cooling curve. Time t1 should be at least equal to t2 + 25 s but less than 100 s. The delay time before the TSP can
be measured ranges from 1 to 50 s for most microelectronic devices. This extrapolation procedure is valid for
semiconductor (junction) sensing elements >0.2 mm (8 mils) in diameter over the delay time range of interest (1 to 50
s).
When the error in the calculated thermal resistance caused by using VMD2 instead of the extrapolated value VMD(t = 0)
exceeds 5 percent, the extrapolated value of VMD shall be used for calculating the average junction temperature.
The heating power, PD, shall be chosen such that the calculated junction-to- reference point temperature difference
as measured at VMD2 is greater than or equal to 20°C. The values of VMD, VMC, and PD are recorded during the power
application test.
The following data shall be recorded for these test conditions:
a. Temperature sensitive electrical parameters (VF, VEB (emitter-only switching), VEB (emitter and collector
switching), VCB, VF(subst), or other appropriate TSP).
b. Average junction temperature, TJ(Avg), is calculated from the equation:
VMC -1
TJ(AVG) = TR + (VMD - VMC),

TMC
where: TR = TC or TM
c. Case or mounting surface temperature, TC or TM, (usually 60° ±0.5°C).
d. Power dissipation, PD where PD = PD(Package) or PD(Element).
e. Mounting arrangement.
METHOD 1012.1
4 November 1980
7
MIL-STD-883-1
3.2.3.2 Typical test circuits for indirect measurements of TJ(Avg). The circuit on figure 1012-3 can be used to sense
VF, VEB(emitter-only switches), VEB(emitter and collector switching), and VCB. The circuit is configured for heating
power to be applied only to the junction element being sensed PD(Element) for illustration purposes only.
The circuit on figure 1012-3 is controlled by a clock pulse with a pulse width less than or equal to 100 s and
repetition rate less than or equal to 66.7 Hz. When the voltage level of the clock pulse is zero, the transistor Q1 is off
and transistor Q2 is on, and the emitter current through the device under test (DUT) is the sum of the constant
heating current and the constant measuring current. Biasing transistor Q1 on, shunts the heating current to ground
and effectively reverse biases the diode D1. The sample-and-hold unit is triggered when the heating current is
removed and is used to monitor the TSP of the device under test. During calibration, switch S4 is open.
The circuit on figure 1012-4 can be used to sense the forward voltage of the substrate diode of a junction isolated
integrated circuit. In this test circuit the microelectronic device under test is represented by a single transistor
operated in a common-emitter configuration. The substrate diode DSUBST is shown connected between the collector
(most positive terminal) and the emitter (most negative terminal) of the integrated circuit under test. The type of
circuitry needed to interrupt the heating power will depend on the complexity of the integrated circuit being tested.
The circuit on figure 1012-4 is controlled by a clock pulse with a pulse width less than or equal to 100 s and
repetition rate less than or equal to 66.7 Hz. When the voltage level of the clock pulse is zero, transistor Q1 being off
and transistor Q2 on, the device under test is dissipating heating power. Biasing transistor Q1 on and Q2 off,
interrupts the heating power and forward biases the substrate diode. The sample-and-hold unit is triggered when the
heating current is removed and is used to monitor the substrate diode forward voltage. During calibration, switch S1
is open.
3.3 Thermal response time, junction to specified reference point, tJR.
3.3.1 General considerations. When a step function of power dissipation is applied to a semiconductor device, the
junction temperature does not rise as a step function, but rather as a complex exponential curve. An infrared
microradiometer or the electrical technique, in which a precalibrated temperature sensitive device parameter is used
to sense the junction temperature, shall be used to generate the microelectronic device thermal response time.
When using electrical techniques, in which the device heating power is removed before the TSP is sensed for
measuring the thermal response time, the cooling curve technique shall be used. The measurement of the cooling
curve is performed by heating the device to steady state, switching the power off, and monitoring the junction
temperature as the device cools. The cooling curve technique is based upon the assumption that the cooling
response of a device is the conjugate of the heating response.
METHOD 1012.1
4 November 1980
8
MIL-STD-883-1
3.3.2 Measurement of junction temperature as a function of time for the determination of tJR. The change in
junction temperature as a function of time resulting from the application or removal of a step function of heating power
dissipation in the junction(s) shall be observed using an infrared microradiometer with a response time of less than
100 s, or electrical equipment with a response time of less than 100 s and sufficient sensitivity to read a
precalibrated temperature sensitive electrical parameter of the junction. During this test the device reference point
temperature, as specified, shall be held constant, the step function of power dissipation shall be applied or removed,
and the waveform of the junction temperature response versus time shall be recorded from the time of power
application or removal to the time when the junction temperature reaches a stable value.
The following data shall be recorded for this test condition:
a. Temperature sensitive electrical parameter (see section 3.2.3).
b. Infrared microscope spatial resolution (see section 3.2.2).
c. Peak, average, or region junction temperature as a function of time (see section 3.2.2 or 3.2.3 for details).
d. Case or mounting surface temperature TC or TM (usually 60°C ±0.5°C).
e. Power dissipation, PD(Package) or PD(Element)m in the package.
f. Reference temperature measuring point.
g. Mounting arrangement.
3.3.3 Typical test circuits for measurement of junction temperature as a function of time. The circuits depicted in
section 3.2.3 are also used for the measurement of junction temperature as a function of time. The clock pulse is
varied to give the required step of heating power and the TSP is monitored on a cathode ray oscilloscope. When an
infrared microradiometer is used, the measuring current and TSP sensing circuitry is disconnected.
3.4 Calculations of RJR and tJR.
METHOD 1012.1
4 November 1980
9
MIL-STD-883-1
3.4.1 Calculations of package thermal resistance. The thermal resistance of a microelectronic device can be
calculated when the peak junction, average junction, or region junction temperature, TJ(Peak), TJ(Avg), or TJ(Region),
respectively, has been measured in accordance with procedures outlined in sections 3.1 and 3.2. If the total package
capability is to be assessed, then rated power PD(Packages) should be applied to the device under test. For quality
control purposes the power dissipation in the single test junction PH(Element) can be used in the calculation of thermal
resistance.
With the data recorded from each test, the thermal resistance shall be determined from:
RJC(PEAK) = TJ(PEAK) - TC, junction peak-to-case;

PD(Package)
RJC(Avg) = TJ(Avg) - TC, junction average-to-case; or

PD(Package)
RJC(Region) = TJ(Region) - TC, junction region-to-case;

PD(Package)
For calculations of the junction element thermal resistance, PD(Element) should be used in the previous equations. Note
that these thermal resistance values are independent of the heat sinking technique for the package. This is possible
because the case or chip carrier (reference) temperature is measured on the package itself in an accessible location
which provides a representative temperature in the major path of heat flow from the chip to the heat sink via the
package.
3.4.2 Calculation of package thermal response time. The thermal response time of a microelectronic device can
be calculated when the peak junction, average junction, or region junction temperature, TJ(Peak), TJ(Avg), or TJ(Region),
respectively, has been measured as a function of time in accordance with procedures outlined in section 3.3. If the
total package capability is to be assessed, then rated power PD(Package) should be applied to the device under test.
For quality control purposes the power dissipation in the single test junction PD(Element) can be used in the calculation
of thermal response time.
With the data recorded from each test, the thermal response time shall be determined from a curve of junction
temperature versus time from the time of application or removal of the heating power to the time when the junction
temperature reaches a stable value. The thermal response time is 0.9 of this difference.
a. Description of package; including number of chips, location of case or chip carrier temperature
measurement(s), and heat sinking arrangement.
b. Test condition(s), as applicable (see section 3).
c. Test voltage(s), current(s) and power dissipation of each chip.
d. Recorded data for each test condition, as applicable.
e. Symbol(s) with subscript designation(s) of the thermal characteristics determined to verify specified values
of these characteristics, as applicable.
f. Accept or reject criteria.
METHOD 1012.1
4 November 1980
10
MIL-STD-883-1
FIGURE 1012-1. Temperature controlled heat sink.
METHOD 1012.1
4 November 1980
11
MIL-STD-883-1
FIGURE 1012-1. Temperature controlled heat sink - Continued.
METHOD 1012.1
4 November 1980
12
MIL-STD-883-1
FIGURE 1012-2. Temperature arrangement for mounting surface temperature measurements.
METHOD 1012.1
4 November 1980
13
MIL-STD-883-1
TSP: Diode VF - Switch S1 in position 2

Switch S2 in position 1
Transistor VEB (Emitter-only switching) - Switch S1 in position 2

Transistor VEB (Emitter and collector switching) - Switch S1 in position 2

Transistor VCB - Switch S1 in position 1

FIGURE 1012-3. Typical test circuit for indirect measurement of TJ(Avg) using
p-n junction voltages of active devices.
METHOD 1012.1
4 November 1980
14
MIL-STD-883-1
FIGURE 1012-4. Typical test circuit for indirect measurement of TJ(Region) using
the substrate diode of junction isolated integrated circuit.
METHOD 1012.1
4 November 1980
15
MIL-STD-883-1
METHOD 1012.1
4 November 1980
16
MIL-STD-883-1
METHOD 1013
DEW POINT
1. PURPOSE. The purpose of this test is to detect the presence of moisture trapped inside the microelectronic
device package in sufficient quantity to adversely affect device parameters. The most sensitive indicator of moisture
is device leakage current. This test specifies a lower temperature of -65°C for the normal dew point test. It may be
desirable in some cases, where the presence of moisture in concentrations lower than that would be revealed at this
lower temperature, to extend the lower temperature downward.
2. APPARATUS. The apparatus used in this test shall be capable of varying the temperature from the specified
high temperature to -65°C while the parameter is being measured.
3. PROCEDURE. The voltage and current specified in the applicable acquisition document shall be applied to the
terminals and the device leakage current or other specified parameter(s) continuously monitored from the specified
high temperature to -65°C and back to the high temperature. The dew point temperature is indicated by a sharp
discontinuity in the parameter being measured with respect to temperature. If no discontinuity is observed, it shall be
assumed that the dew point is at a temperature lower than -65°C and the device being tested is acceptable. Devices
which demonstrate instability of the measured parameter at any point during this test shall be rejected even though a
true dew point is not identified. If a high temperature is not specified in the applicable acquisition document, the
device shall be taken to a temperature at least 10°C above ambient temperature to initiate this test and enable
detection of dew point in devices which may already be at saturation. The rate of change of temperature for this test
shall be no greater than 10°C per minute. The test voltage shall be at least equal to the rated breakdown voltage of
the device since it is necessary to apply sufficient voltage to achieve ionization.
4. SUMMARY. The following details shall be specified on the applicable acquisition document:
a. Test temperature, high (see 3) and low if other than -65°C (see 1).
b. Test voltage and current (see 3).
c. Test parameter (see 1 and 3).
METHOD 1013
1 May 1968
1
MIL-STD-883-1
METHOD 1013
1 May 1968
2
MIL-STD-883-1
METHOD 1014.17
SEAL
1. PURPOSE. The purpose of this test is to determine the effectiveness (hermeticity) of the seal of microelectronic
devices with designed internal cavities.
1.1 Definitions.
a. Standard leak rate. That quantity of dry air at 25C in atmosphere cubic centimeters flowing through a leak or
multiple leak paths per second when the high-pressure side is at 1 atmosphere (760 mm Hg absolute) and the
low-pressure side is at near total vacuum (see 1.1f below). Standard leak rate shall be expressed in units of
atmosphere cubic centimeters per second of air (atm cm3/s air).
b. Measured leak rate. The implied leak rate that is measured on the detector for a given package using the specified
conditions and employing a specified test medium (tracer gas) specific to that detector. Measured leak rate is
expressed in units of atmosphere cubic centimeters per second (atm cm3/s) for the medium used.
c. Leak-rate conversion factors for various test media.

atm cm3/s (Kr85) X 1.71 = atm cm3/s (air)
atm cm3/s (Kr85) X 4.61 = atm cm3/s (He)
atm cm3/s (He) X 0.37 = atm cm3/s (air) 1/, 2/
atm cm3/s (OLhe) X 0.37 = atm cm3/s (air)
atm cm3/s (OLN2) X 0.98 = atm cm3/s (air)
atm cm3/s (OLaIr) X 1.00 = atm cm3/s (air)
1/ To use this conversion, the free internal volume must be filled with 100% helium at 1 atm.
2/ For test conditions A1, A2, A5, CH1 and CH2, to convert an atm cm3/s (He) value to an atm cm3/s (Air)
value, the atm cm3/s (He) value must be inserted into the Howl-Mann equation (2.1.2.3 Eq 1) to back calculate
the corresponding Air leak rate.
d. Equivalent standard leak rate. The leak rate that a given package would have under the standard conditions of
1.1a. The equivalent standard leak rate is determined by converting the implied leakage measured (La, R, Q or OL)
to those conditions of 1.1c using appropriate calculations. For the purpose of comparison with rates determined by
various media, the equivalent standard leak rate (for the medium used in the test) must be converted to the
equivalent standard leak rate for the comparative medium (generally converted to air equivalents). The equivalent
standard air leak rate shall be expressed in units of atmosphere cubic centimeters per second of air (atm cm3/s air).
(1) La is the equivalent standard leak rate a package has expressed in term for air, or after converting to air from
another medium.
(2) L is the maximum allowed equivalent standard leak rate La permitted for a package based on Table VII limits.
For pass/fail criteria, L is compared to La.
(3) R is the implied leak rate of the medium (such as helium) as measured (such as on a mass spectrometer).
(4) R1 is the maximum allowed leak rate for the medium used. It is based on L using calculations to adjust for
the specific test conditions used in the measurement (see paragraph 2.1.2.3). For pass/fail criteria, R is
compared to R1.
(5) Q is the implied leak rate of the medium (such as Krypton 85 (Kr85)) as measured on a radioisotope detector
(see paragraph 2.2.6.c).
(6) Qs is the maximum allowed leak rate for the medium used. It is based on L using calculations to adjust for
the specific test conditions used in the measurement (see paragraph 2.2.5.1). For pass/fail criteria, Q is
compared to Qs.
(7) OL is the implied leak rate as measured on an optical leak detector. The test gas is denoted as OLair, OLN2, or
OLHe.
METHOD 1014.17
3 May 2018
1
MIL-STD-883-1
e. Internal free-volume. The volume of the gas (or air) within a device package that could escape should the package
leak. It is the volume of the internal package minus the circuitry, elements, or other physical displacements within
the package.
f. Near total vacuum. The reduction of atmospheric pressure to 2 mm Hg or less, absolute.
g. Pounds per square inch absolute (psia) gas. The sum of gauge pressure in the tank and barometric pressure. A
tank showing zero gauge pressure is balancing the atmospheric conditions, hence has one atmosphere pressure (1
atm) inside. Absolute pressure takes this into consideration and is a measure of true content including this initial
content. Thus, psia is the sum of the gauge pressure plus the barometric pressure.
1.2 Test Conditions. The following procedures are covered by this method:
1.2.1 Trace Gas (He). 1/

A1 Fixed Fine Leak
A2 Flexible Fine Leak
A4 Fine Leak, applicable to the unsealed package.
A5 Combined He/O2 dry gross leak, and, He fine leak (per A1 or A2) by mass spectrometry
1.2.2 Radioisotope (Kr85).

B1 Fine Leak
B2 Gross Leak
B3 Wet Gross Leak
1.2.3 Perfluorocarbon Gross Leak.

C1 Fixed Method that uses a liquid bath.
C2 has been replaced by C1.
C3 Fixed Method that uses a vapor detection system instead of an indicator bath.
1.2.4 Optical.
C4 Gross Leak
C4 and C5 Combined Gross and Fine Leak
1.2.5 Penetrant Dye Gross Leak.

D Penetrant dye gross leak
1.2.6 Weight Gain Gross Leak.

E Weight gain gross leak
.
1.2.7 Radioisotope (Kr85).

G1 Thermal Leak Test for the evaluation of package hermetic integrity at elevated temperature.
1.2.8 Cumulative Helium Leak Detection (CHLD).

CH1 Fixed Leak Detection for both Fine and Gross leak using the CHLD System.
CH2 Flexible Leak Detection for both Fine and Gross leak using the CHLD System.
Z He Gross Leak Detection combined with one of several other tracer gases for Fine Leak Detection using the
CHLD System.
1/ A3 was intentionally omitted.
METHOD 1014.17
3 May 2018
2
MIL-STD-883-1
1.3 Test Structure. Fine and gross leak tests shall be conducted in accordance with the requirements and procedures of
the specified test condition. Testing order shall be fine leak (condition A or B1) followed by gross leak (condition B2, C1, C3,
D, or E) except when B2 is used together with A, B1. . C4 and C5 may be performed together. Condition A5 is a combination
dry gross and fine leak test and therefore gross leak may be used prior to fine leak tests. Condition B2 is a dry gas gross
leak test and may be used prior to fine leak tests. When using the radioisotope tests, it is recommended practice to use B2
first to remove gross leakers prior to the fine leak test B1, which minimizes the Kr85 entrapped in rejected devices. When
specified (see 4), measurements after test shall be conducted following the leak test procedures. Devices to be tested for
thermal leakage shall first be subjected to a radioisotope gross leak test (B2), a radioisotope fine leak test (B1), or a
gross/fine combination leak test, (B2/B1). Where bomb pressure specified exceeds the microcircuit package capability,
alternate pressure, exposure time, and dwell time conditions may be used provided they satisfy the leak rate, pressure, time
relationships which apply, and provided a minimum of 30 psia (2 atmospheres absolute) bomb pressure is applied in any
case or for condition C4, a minimum of 10 psi differential test pressure is applied in any case. When test condition B2 is
used to test large surface devices, a bomb pressure of 20 psia minimum may be used with the appropriate increase in bomb
time (see paragraph 2.2.5.1). When test condition A4 is used, gross leak testing is not required. However A4 shall not be
used in lieu of the required seal testing of lidded packages. When batch testing (more than one device in the leak detector
at one time) is used in performing test condition A or B and a reject condition occurs it shall be noted as a batch failure.
Each device may then be tested individually one time for acceptance if all devices in the batch are retested within one hour
after removal from the tracer gas pressurization chamber. For condition B1, B2 only, devices may be batch tested and/or
individually remeasured for acceptance providing all measuring is completed within one-half hour for B1 and within 10
minutes for B2 or combination B2/B1, after removal from the tracer gas pressurization chamber. For condition C3 only,
devices that are batch tested, and indicate a reject condition, may be retested individually one time using the procedure of
2.3.4.1 herein, except that re-pressurization is not required if the devices are immersed in detector fluid within 20 seconds
after completion of the first test, and they remain in the bath until retest. For conditions C4 and C5 only, the package must
meet construction requirements defined in 2.4.1. This includes devices that are conformal coated such as circuit board
assemblies.
1.3.1 Retest. Devices which fail gross leak may be retested destructively. If the retest shows a device to pass, that was
originally thought to be a failure, then the device need not be counted as a failure in the accept number of sample size
number calculations. Devices which fail fine leak shall not be retested for acceptance unless specifically permitted by the
applicable acquisition document. The applicable acquisition document must also state that a failed device that passes
retest needs not be counted as a failure in the sample size accept number calculations, otherwise if will count. Where fine
leak retest is permitted, the entire leak test procedure for the specified test condition shall be repeated. That is, retest
consisting of a second observation on leak detection without a re-exposure to the tracer fluid or gas under the specified test
condition shall not be permissible under any circumstances. Preliminary measurement to detect residual tracer gas is
advisable before any retest.
1.3.2 Failure criteria. The failure criteria for Fine Leak is provided in Table VII of paragraph 3. Failure criteria for other
conditions; i.e., Gross Leak and Thermal Leak, is provided following the procedure for each individual test.
1.4 Apparatus. The apparatus required for the seal test shall be as indicated in the procedure for the applicable test
condition being performed.
METHOD 1014.17
3 May 2018
3
MIL-STD-883-1
2. TEST CONDITIONS.
2.1 Test Conditions A1, A2, A4 and A5 fine leak tracer gas (He). 1/
2.1.1 Apparatus. Apparatus required shall consist of suitable pressure and vacuum chambers and a mass
spectrometer-type leak detector preset and properly calibrated for a helium leak rate sensitivity sufficient to read measured
helium leak rates of 10-9 atm cm3/s and greater. The volume of the chamber used for leak rate measurement should be
held to the minimum practical, since this chamber volume has an adverse effect on sensitivity limits. The leak detector
indicator shall be calibrated using a diffusion-type calibrated standard leak at least once during every working shift. In
addition for test condition A4, the following apparatus is required:
a. Fixture and fittings to mate the package to be tested to the leak detector.
b. Surgical rubber gasket.
c. Apiezon grease (type M or N), perfluorocarbon fluid 2/, or equivalent, if required to obtain seal.
d. In addition for test condition A5, the following apparatus shall be required:
1. A mass spectrometer system capable of measuring the gas pressure in the sample test chamber and mass
spectrometer chamber during the entire test process, and, qualitative measurement of helium and oxygen as a
gross leak measurement during the evacuation process prior to quantitative measurement of the helium fine leak
rate per condition A2.
2. A computer data system capable of permanently recording the entire test process.
3. Metal filler blocks to reduce empty space in the sample test chamber, as needed, to achieve the required helium
detection levels.
4. Two (2) calibrated NIST traceable helium leak rate standards, one having a calibrated leak rate equal to or below
the measured helium leak rate acceptance level (R1) and the other having a calibrated helium leak rate at least
one (1) decade but not greater than three (3) decades above the measured helium leak rate acceptance level
(R1).
5. A nitrogen or argon (99.9%) flow to flush room air from the sample test chamber before starting a test.
2.1.2 Procedures. Test condition A1 is a "fixed" method with specified conditions in accordance with Table I that will
ensure the test sensitivity necessary to detect the reject limit (R1). Test condition A2 is a "flexible" method that allows the
variance of test conditions in accordance with the formula of 2.1.2.3 to detect the specified equivalent standard leak rate (L)
at a predetermined reject limit (R1). Test condition A4 is a method that measures the leak rate (R) of an unsealed package.
2.1.2.1 Test conditions A1 and A2, and A5 procedures applicable to "fixed" and "flexible" methods. Insert the completed
device(s) into the sealed pressure chamber. The air inside the chamber shall then be evacuated to near total vacuum and
then pressurized with 100 +0/-5 percent pure helium. Alternatively, a series of helium refills and vents may be performed
until the minimum helium content is obtained. Once the required helium concentration is obtained, the pressure chamber
can be set to the required pressure and time for the device(s). The pressure shall then be relieved and each specimen
transferred, within the specified dwell time, to another chamber or chambers which are connected to the evacuating system
and a mass-spectrometer-type leak detector. When the mass-spectrometer chamber(s) is evacuated, any tracer gas which
was previously forced into the specimen will thus be drawn out and indicated by the leak detector as a measured leak rate
(R). (The number of devices removed from pressurization for leak testing shall be limited such that the test of the last
device can be completed within the dwell times listed in Table 1 for test condition A1 or within the chosen value of dwell time
t2 for test condition A2.)
NOTE: The Flexible Method A2 shall be used unless otherwise specified in the acquisition document, purchase order, or
contract.
1/ A3 was intentionally omitted.

METHOD 1014.17
3 May 2018
4
MIL-STD-883-1
2.1.2.2 Test condition A1, fixed method. The devices(s) shall be tested using the appropriate conditions specified in
Table I for the internal free volume of the package under test. The time t1 is the time under pressure and time t2 is the
maximum time allowed after release of pressure before the device shall be read. The fixed method shall not be used if the
maximum equivalent standard leak rate limit given in the acquisition document is less than the limits specified herein for the
flexible method.
2.1.2.3 Test condition A2, flexible method. Values for bomb pressure exposure time, and dwell time shall be chosen such
that actual measured tracer gas leak rate (R) readings obtained for the devices under test (if defective) shall be one-half
order of magnitude greater than the minimum detectable leak rate of the mass spectrometer. (Example: For a measured
tracer gas leak rate of 1 xE-9, the sensitivity of the equipment shall be 5 xE-10. Example 2: For a measured tracer gas leak
rate of 2 xE-10, the sensitivity of the equipment shall be 6 xE-11. Example 3: For a measured tracer gas leak rate of 7 xE-
11, the sensitivity of the equipment shall be 2 xE-11.) The number of devices removed from pressurization for leak testing
shall be limited such that the test of the last device can be completed within the dwell time used in Eq (1). The devices
shall be subjected to a minimum of 2 atmospheres absolute of helium atmosphere. The chosen values, in conjunction with
the value of the internal free volume of the device package to be tested and the maximum equivalent standard leak rate limit
(L) (as shown below or as specified in the applicable acquisition document), shall be used to calculate the reject limit (R1)
using the following formula (see Eq (1)):
 1  1
 Lt 1  MA  2   Lt 2  MA  2  Eq (1)
       
1  VP 0 M 
  VP 0 M 

LPE  MA  2    
R1    1 e e
PO  M 
Where:
R = The actual leakage measurement of tracer gas (He) through the leak in atm cm3/s He.
R1 = The calculated reject limit maximum allowable leakage measurement.
L = The maximum allowable equivalent standard leak rate limit (see Table VII of paragraph 3) in atm cm3/s air.
PE = The pressure of exposure in atmospheres absolute.
PO = The atmospheric pressure in atmospheres absolute. (1 atm)
MA = The molecular weight of air in grams (28.96).
M = The molecular weight of the tracer gas (He) in grams. (4 amu’s)
t1 = The time of exposure to PE in seconds.
t2 = The dwell time between release of pressure and leak detection, in seconds.
V = The internal free volume of the device package cavity in cubic centimeters.
METHOD 1014.17
3 May 2018
5
MIL-STD-883-1
2.1.2.4 Test condition A5, Combined He/O2 dry gross leak and He fine leak (per A1 or A2) by mass spectrometry.
The mass spectrometer with the appropriate metal filler block, if needed, shall be calibrated daily prior to use, and
recalibrated after every eight (8) hours of use or upon changing the metal filler block or upon service to the equipment.
When calibrating the fine leak rate of the system, the leak rates of the NIST traceable helium leak rate standards shall be
corrected for use temperature and helium depletion rate per the calibration certificate of each standard. The helium signal
shall be measured from each of the two corrected helium leak rate standards and used to create a linear calibration function
that shall be used to convert the measured helium spectrometer signal to the quantitative measured helium leak rate. The
leak rate standards shall be recalibrated at least yearly.
The minimum internal volume that may be tested using the gross leak portion of this condition shall be the minimum internal
volume where a gross leak can be detected on a device having a hole in the lid that is 0.005 inches or greater in diameter.
A reference measurement shall be recorded immediately prior to testing a batch of devices and used as a qualitative
reference in determining gross leak rejects. The reference shall include the time dependent chamber pressures, and, the
helium and the oxygen baseline signals during the gross leak portion of the test procedure using a known good hermetic
sample or a metal block to simulate the test sample external volume.
Prior to testing, test samples shall be placed in a sealed helium pressurization chamber per paragraph 2.1.1 Based on the
specified L value required for the fine leak rate testing of the device, (see Equation 1), the values for bomb pressure and
exposure time shall be chosen using a maximum dwell time of 72 hours, such that the maximum allowed leak rate (R1) of
the tracer gas reading obtained for the device shall be one-half order of magnitude greater than the minimum detectable
leak rate of the mass spectrometer (background reading) during the measurement process. A difference less than one
order of magnitude may be used if there are documented procedures to control a rising background from interfering with
accurate results and that the mass spectrometer can measure an R1 signal that is no less than 3 times the standard
deviation of the background signal.
Upon removal of the batch of devices from the helium pressure chamber, an initial gross and fine leak measurement of the
batch shall be completed within one (1) hour unless it can be demonstrated that a longer time, not greater than the dwell
time used in the calculation of R1, is capable of discovering gross and mid-range fine leaks. Each device shall be inserted
into the test chamber, the test chamber purged with nitrogen or argon for an appropriate time to flush room air from the
chamber as was done in the reference acquisition, and the test chamber evacuated. Upon starting the evacuation, the
chamber pressure data and the helium and oxygen gross leak test data and helium fine leak rate data shall be acquired and
permanently saved. The sample test data shall be presented in a graph that compares the sample test data with the
reference data that was acquired. Differences between the test data and the references data shall determine acceptance
per the gross leak criteria.
From the initial measurement of the devices, following the helium pressure bomb, the devices shall be evaluated in the
following order:
 Gross leak failures shall be removed from the batch.
 Devices that pass the gross and the fine leak rate acceptance criteria shall be accepted.
 The remaining devices (devices not failing due to gross leak yet not passing due to sorption or possible mid-range
leaks) shall be set aside in room air and retested from time to time (without further helium re-pressurization) for fine
leak compliance. The maximum amount of time, defined as the Fine Leak Dwell Time (in hours), shall be
determined by calculation of the length of time that it will take for the helium inside the device to deplete 1% of its
helium contents if the measured leak rate was due to an actual leakage of helium through a leak path in the device
seal, rather than a sorption effect.
 The Fine Leak Dwell Time (FLDT) shall be calculated for each device using the equation below:
FLDT= K * P * V / LMLR, where

K = 2.8 x 10-4(hr/sec)
P = 0.01 (1% loss of He)
V = Internal volume of the test device (cc)
LMLR = Lowest Measured Leak Rate recorded immediately following the initial leak test.”.
FLDT shall not exceed 72 hours and shall not be greater than the dwell time used in the calculation of R1
METHOD 1014.17
3 May 2018
6
MIL-STD-883-1
Devices failing to achieve the fine leak acceptance criteria within the calculated FLDT time shall be rejected. Devices
demonstrating excessive fine leak rate maximum signal during the initial test, as compared to the typical good devices, and
passing the fine leak rate criteria during the allowed dwell time, shall be subjected to a detailed visual inspection to rule out
the potential to be a gross leaker and removed from the batch only if determined to be a gross leaker.
The remaining devices shall be set aside in room air for sorption evaluation and retested from time to time (without further
helium re-pressurization) for fine leak compliance. Devices with an internal volume>0.1cm3 may be placed in a vacuum
and/or baked at 100°C for no more than 20 minutes to assist with desorption of Helium from the surface only during this
time. The maximum amount of time, defined as the Fine Leak Dwell Time (in hours), shall be determined by calculation of
the length of time that it will take for the helium inside the device to deplete 1% of its helium contents if the measured leak
rate was due to an actual leakage of helium through a leak path in the device seal, rather than a sorption effect.
2.1.3 Failure Criteria.

Gross leak failure criteria shall be as follows:
1. Helium gross leak signal that is greater than 3 times the helium reference (excluding known helium sorption
effects), and/or,
2. Oxygen gross leak signal that is greater than 3 times the oxygen reference, and/or,
3. Pressure readings that are greater than 3 times the pressure reference in amplitude or extended time to
achieve adequate pressure levels to activate the spectrometer (unless shown to be a leak of the system rather
than the device).
The failure criteria for Fine Leak is provided in Table VII of section 3.
2.1.4 Test condition A4, procedure applicable to the unsealed package method. The fixture and fittings of 2.1.1.a. shall
be mounted to the evacuation port of the leak detector. Proof of fixturing integrity shall be verified by sealing a flat surfaced
metal plate utilizing the gasket of 2.1.1b (and grease or fluid of 2.1.1.c if required to obtain seal) and measuring the
response of the leak test system. Testing shall be performed by sealing the package(s) to the evacuation port and the
package cavity evacuated to 0.1 torr or less. Care shall be taken to prevent contact of grease with package (seal ring not
included) to avoid masking leaks. The external portion of the package shall be flooded with Helium gas either by the use of
an envelope or a spray gun, at a pressure of 10 psig.
2.1.4.1 Failure criteria. Unless otherwise specified, devices shall be rejected if the measured leak rate (R) exceeds 1 X
10-8 atm cm3/s He.
METHOD 1014.17
3 May 2018
7
MIL-STD-883-1
TABLE I. Fixed conditions for condition A1.

Bomb Condition
V Bomb Condition
Internal Hybrid Class H
Free Hybrid Class K
and Monolithic Classes B, Q, S and V
Volume of
package Psia t1 t2 R1 L Psia t1 t2 R1 L
(cm3) ±2 Minimum Max Reject Limit Equivalent ±2 Minimum Max Reject Limit Equivalent
exposure Dwell (atm-cm3/s) Leak rate exposure Dwell (atm- cm3/s) Leak rate
1/ time time He (atm-cm3/s) 1/ time time He (atm- cm3/s)
(hrs) (hrs) air (hrs) (hrs) air
2/ 2/
≤0.05 75 1.0 6.5 X 10-9 75 4.0 1.1 X 10-11
75 5.0 3.2 X 10-8 75 19.0 5.0 X 10-11
0.5 <5 X 10-8 0.5 <1 X 10-9
90 0.5 3.9 X 10-9 90 3.5 1.1 X 10-11
90 4.0 3.1 X 10-8 90 16.0 5.0 X 10-11
>0.05 ≤0.1 75 0.5 6.5 X 10-9 75 0.5 1.6 X 10-11
75 2.5 3.2 X 10-8 75 1.5 4.9 X 10-11
1 1
90 0.5 7.8 X 10-9 90 0.5 2.0 X 10-11
90 2.0 3.1 X 10-8 90 1.5 5.9 X 10-11
<1 X 10-7 <5 X 10-9
>0.1 ≤0.4 60 2.0 5.2 X 10-9 60 2.0 1.3 X 10-11
60 12.0 3.1 X 10-8 60 8.0 5.3 X 10-11
1 1
75 2.0 6.6 X 10-9 75 1.5 1.2 X 10-11
75 9.5 3.1 X 10-8 75 6.0 4.9 X 10-11
>0.4 ≤1.0 30 0.5 2.6 X 10-8 30 2.0 1.1 X 10-11
30 1.0 5.2 X 10-8 30 9.5 5.0 X 10-11
1 1
45 0.5 3.9 X 10-8 45 1.5 1.2 X 10-11
45 1.0 7.8 X 10-8 45 6.5 5.1 X 10-11
-9
>1.0 ≤5.0 30 0.5 5.3 X 10 30 9.5 1.0 X 10-11
30 3.0 3.1 X 10-8 30 47.5 5.0 X 10-11
1 1
45 0.5 7.9 X 10-9 45 6.5 1.0 X 10-11
-6
45 2.0 3.1 X 10-8 <1 X 10 45 32.0 5.1 X 10-11 <1 X 10-8
>5.0 ≤10 30 1.0 5.3 X 10-9 30 19.0 1.0 X 10-11

30 6.0 3.1 X 10-8 30 95.0 5.0 X 10-11
1 1
45 1.0 7.9 X 10-9 45 13.0 1.0 X 10-11
45 4.0 3.2 X 10-8 45 63.5 5.0 X 10-11
>10 ≤20 30 2.0 5.3 X 10-9 30 38.0 1.0 X 10-11
1 1
30 12.0 3.1 X 10-8 30 190.0 5.0 X 10-11
1/ The higher pressures indicated may only be used with the approval of the part manufacturer. Manufacturers shall
provide the qualifying activity with data to show that the higher pressures indicated do not damage the part being tested
by compromising the package integrity, e.g. lid seal, feedthroughs, etc.
2/ For packages with internal free volumes > 0.05 cm3, the maximum dwell time t2 may be increased up to a maximum of 4
hours. Prior to increasing dwell times, the manufacturer or test facility shall qualify a procedure for each package type to
ensure there are no gross leak escapes at the maximum dwell time proposed. If applicable, this procedure shall include
mitigation of surface sorption as stated in 2.8.3.3.
METHOD 1014.17
3 May 2018
8
MIL-STD-883-1
2.2 Test Condition B, Radioisotope.
2.2.1 Radioisotope leak test apparatus. Apparatus for this test shall consist of:
a. Radioactive tracer gas pressurization console containing a Kr85/air mixture.
b. Counting equipment consisting of a scintillation crystal, photomultiplier tube, preamplifier, ratemeter, and Kr85
reference standards. The counting station shall be of sufficient sensitivity to determine through the device wall the
radiation level of any Kr85 tracer gas present within the device.
(1) A “Flat Top Scintillation Crystal” counting station shall have a minimum sensitivity of 4,500 c/m/µCi Kr85 and
a minimum detectable count rate of 500 counts per minute above ambient background.
(2) A “Well Crystal” counting station shall have a minimum sensitivity of 10,000 c/m/µCi Kr85 and a minimum
detectable count rate of 500 counts per minute above ambient background.
(3) A “Tunnel Crystal” counting station shall have a minimum sensitivity of 4,500 c/m/µCi Kr85 and a minimum
detectable count rate of 500 counts per minute above ambient background.
The counting station operator shall perform a functional check at least once every shift using Kr85 reference standards
and following the equipment manufacturer's instruction. The actual calibration reading shall be recorded for each
scintillation crystal detection system (Well, Tunnel, and Flat top) prior to performing testing.
c. A tracer gas that consists of a mixture of Kr85 and air. The concentration of the Kr85 in the Kr85/air mixture shall be
no less than 100 micro-curies per atmospheric cubic centimeter. The determined values of each analytical sample
shall be recorded in accordance with the calibration requirements of this standard (see 4.5.1 of MIL-STD-883). The
specific activity may be measured automatically by the equipment during cycling of the equipment. If not, then an
analytical sample of the Kr85 shall be taken at least once each 30 days to determine when the concentration drops
by 5 percent in concentration and specific activity. If production use of the pressurization console averages 1000 or
fewer bombings during the month, analytical sampling may be annually. When the concentration drops by 5
percent, corrective action shall be taken to adjust the concentration.
d. ESD Protective Tubes shall be utilized to ensure the system is ESD safe when using the Well Counting Station.
e. All calibration records (e.g. daily, monthly, voltage crystal plateau graphs, and C of C for Kr85 reference standard,
specific activity etc.) shall be maintained and made available to the qualifying activity.
f. The crystal voltage plateau graph shall be performed and documented semiannually. Examples of good plateau
graphs and bad plateau graphs shall be included in the internal procedure.
2.2.2 Test condition B2 – radioisotope gross leak package qualification. This test shall be used to qualify all packages
with less than 0.1 cm3 internal free volume that will undergo screening tests per the B2 radioisotope gross leak, or the B2/B1
gross/fine leak combination test (see paragraph 2.2.6.b and c). The purpose is to assure that if such a packages has a
leak, then that leak will be detectable under test conditions B2 and B2/B1. Packages having 0.1 cm3 internal free volume or
larger do not require package qualification. Packages smaller than 0.1 cm3 internal free volume shall be subjected to the
following requirements:
a. A 5 mil diameter hole shall be made in a representative sample of the devices to be tested.
b. The device shall be subjected to this test condition and removed from the pressurization tank. The device shall be
measured in the counting station immediately after the tank is vented to atmosphere. A “net” reading indication of
500 counts per minute or greater is considered a reject. The device must remain a reject with a minimum of 500
counts per minute above ambient background for ten minutes after removal from the pressurization tank. If the
device does not fail, test conditions B2 and B2/B1 shall not be used.
METHOD 1014.17
3 May 2018
9
MIL-STD-883-1
2.2.3 Test condition B2 and B1 - radioisotope gross/fine combination leak. The apparatus for this test is that of paragraph
2.2. This test may be applied as a combination of conditions B2/B1 and is used in accordance with the requirements of
those conditions for specified packages, as qualified under paragraph 2.2.2, with an atmosphere of Kr85/air mixture. Actual
pressure and soak time for B1 shall be determined in accordance with paragraph 2.2.5.1. When the soak time is completed,
the Kr85/air mixture shall be evacuated until 2.0 torr pressure exists in the pressurization chamber. The evacuation shall be
completed within 3 minutes from either the end of the pressurization cycle or the point at which the chamber pressure
reaches 60 psia (if a higher pressure than 60 psia was used). The chamber shall then immediately be backfilled with air
and the test devices removed from the chamber. The devices shall be measured using a scintillation crystal equipped
counting station as specified in paragraphs 2.2.4.1, 2.2.4.2, or 2.2.5.2. Devices subjected to this gross/fine combination test
must be measured within 10 minutes after removal from the pressurization system. The R value shall not be less than 500
counts per minute above background. If all of the tested devices cannot be measured within 10 minutes after removal from
the pressurization cycle, the remaining devices at 10 minutes must be re-tested as above in this paragraph.
2.2.4 Determination of counting efficiency (k). The counting efficiency (k), or k-factor, is the efficiency of measurement of
radioactive Kr85 tracer gas within a device using a scintillation crystal as a detector. The k-factor must be determined for
the combination of both the scintillation crystal detection system that is to be used for the measurement and for the specific
geometry of the device to be tested (see 2.2.4.1, 2.2.4.2, 2.2.4.3, or 2.2.5.2). This is done using a device ‘sample’ of the
same geometric configuration as the device to be tested. The geometric center of the cavity, or its internal void, is the point
called the “center of mass” of the radioactive gas being measured. The location of the center of mass is the point referred
to for the k-factor of the device as it is positioned in each of the scintillation crystal detection systems described in 2.2.4.1,
2.2.4.2, 2.2.4.3, or 2.2.5.2. Once established, the k-factor for each package configuration shall be recorded. This record
shall list the methodology and procedure used to obtain the k-factor and shall be made available to the qualifying activity
upon request.
2.2.4.1 Scintillation “Well-Crystal”.
a. A representative sample, consisting of a device with the same geometric configuration as the test sample device(s),
shall be used to determine the counting efficiency (k). This representative sample shall have an accurately known
micro-curie content of Kr85 placed within its internal void.
b. The counts per minute from the representative sample shall be measured in the well of the shielded scintillation
crystal of the counting station. The sample device should be in the exact position as test devices will be tested. If
not, then the sample device shall be located at a height not to be exceeded by any device tested (see note below).
From this measured value the counting efficiency, in counts per micro-curie, shall be calculated for that
device/crystal system.
Note: The counting efficiency of the scintillation well crystal is reduced systematically at higher locations within the
crystal’s well. The k-factor for the sample at the bottom of the well will be the greatest. If a device is placed
on top of other devices such as in testing multiple devices simultaneously, then the top device will have the
least measured k-factor effect. Thus, the measured k-factor, determination using the sample device located
other than at the bottom of the crystal’s well, determines the maximum height to be allowed for the actual
test. This height shall be established and shall not be exceeded by any actual test device, including any one
of the multiple devices being simultaneously tested.
METHOD 1014.17
3 May 2018
10
MIL-STD-883-1
2.2.4.2 Scintillation “Flat-Top Crystal”.
a. A representative sample consisting of a device with the same geometric configuration as the test sample device(s)
b. The counts per minute from the representative sample shall be measured on the shielded scintillation crystal of the
counting station. The sample must be in the exact position as the actual test devices will be tested. The k-factor for
the sample shall be measured with the sample placed flat in a position centered to the main body of the crystal.
Some flat-top crystals are solid cylinders of approximately 3 inches diameter, and the device sample is placed on
the cylinder in the same manner, as mentioned. From this measured value, the counting efficiency, in counts per
minute per micro-curie shall be calculated for that device/crystal system.
2.2.4.3 Scintillation “Tunnel Crystal”.
a. A Tunnel Crystal is either a solid block scintillation crystal similar to a flat-top crystal with an open tunnel through the
body or can be a pair of solid scintillation crystals place one above the other in a parallel configuration. Devices
pass through the tunnel or between the parallel crystals, usually on a conveyer belt, allowing dynamic
measurements. This configuration is commonly used in high volume testing.
b. The k-factor must be determined for the Tunnel Crystal’s dynamic condition which is usually less than in a static
condition with the device standing at the center of the tunnel. See paragraph 2.2.5.2 to establish the k-factor for the
sample using such a configuration. Alternately, this k-factor determination is commonly determined by the
manufacturer upon request.
METHOD 1014.17
3 May 2018
11
MIL-STD-883-1
2.2.5 Test condition B1, radioisotope fine or B2/B1 gross/fine leak combination test.
2.2.5.1 Testing parameters. The bombing pressure and soak time shall be determined in accordance with the following
formula (see Eq (2)):
R
QS  Eq (2)
skTPt
Where:
QS = The calculated maximum leak rate allowable, in atm cm3/s Kr, for the devices to be tested.
R = Counts per minute above the ambient background after pressurization if the device leak rate were exactly
equal to QS. This is the reject count above the background of both the counting equipment and the
background reading of the microcircuit, if it has been through prior radioactive leak tests.
s = The specific activity, in micro-curies per atmosphere cubic centimeter of the Kr85 tracer gas in the
pressurization system.
k = The counting efficiency of the specific scintillation crystal used in the testing to measure Kr85 within the
internal cavity of the specific component being evaluated. This k-factor must be determined in accordance
with 2.2.4 for each device geometric configuration in combination with the specific scintillation crystal in
which it will be measured.
T = Soak time, in hours, that the devices are to be pressurized.
P = Pe2-Pi 2, where Pe is the bombing pressure in atmospheres absolute and Pi is the original internal pressure of
the devices in atmospheres absolute. The activation pressure (Pe) may be established by specification or if
a convenient soak time (T) has been established, the activation pressure (Pe) can be adjusted to satisfy
equation (1).
t = Conversion of hours to seconds and is equal to 3,600 seconds per hour.
NOTE: The complete version of equation (1) contains a factor (PO 2 - ( P)2) in the numerator which is a correction factor for
elevation above sea level. PO is sea level pressure in atmospheres absolute and P is the difference in pressure, in
atmospheres between the actual pressure at the test station and sea level pressure. For the purpose of this test
method, this factor has been dropped.
METHOD 1014.17
3 May 2018
12
MIL-STD-883-1
2.2.5.2 Dynamic Measurement of the k-factor with a Scintillation-Crystal.
a. A representative sample consisting of a device with the same geometric configuration as the test sample device(s)
b. A crystal, (or crystals), can be used for dynamic testing of devices passing over or through the crystal(s). This
configuration is commonly used in high volume testing. The k-factor must be determined in the ‘dynamic condition’,
which will establish a k-factor value, (usually less than in a static condition with the device standing at the center of
the tunnel.) The representative sample is measured dynamically, as it passes through the crystal. This establishes
the maximum reading achievable for the sample. From this measured value, the counting efficiency, in counts per
minute per micro-curie shall be calculated. This k-factor determination is most commonly determined by the
equipment manufacturer.
2.2.5.3 Geometric configurations. The k-factor for each geometric configuration is determined and used for testing. As a
convenience, the same k-factor may apply to similar geometric configurations. This allows the same k-factor to be used for
multiple devices, as long as the same test procedure and equipment is used, and the devices are measured using the same
measurement system, (2.2.4.1, 2.2.4.2, or 2.2.5.2).
Scintillation “well” crystals are capable of detecting (measuring) a maximum reading of 16,000 to 18,000 counts per
minute from the emission of one micro-curie of Kr85 contained within the cavity of a device. This maximum reading of Kr85
emission is achieved with the DUT placed deep into the well-crystal and with no shielding from other devices or fixtures.
The counting efficiency (k-factor) for most device configurations and crystal combinations may be available from the
equipment manufacturer by providing the equipment manufacturer with representative samples of the same geometric
configuration as the device to be tested. Suitable facilities shall retain record of how the k-factor was established for each
package configuration and made available to the qualifying activity.
2.2.5.4 Evaluation of surface sorption and wait time. All device encapsulations consisting of glass, metal, and ceramic or
combinations thereof, that also include external coatings and external sealants or labels, shall be evaluated for surface
sorption of Kr85 before establishing the leak test parameters. Devices susceptible to surface sorption must “wait” for the
surface sorption to dissipate before being tested. This time lapse shall be noted and shall determine the "wait time"
specified in 2.2.6.
Representative samples with the questionable surface material shall be subjected to the predetermined pressure and time
conditions established for the device configuration as specified by 2.2.5.1. The samples shall then be measured at the
counting station every 10 minutes, with count rates noted. The total time taken for the count rate to become asymptotic is
the “wait time”.
Devices which are determined to have surface absorption should first be subjected to the radioisotope gross leak test
procedure (B2), and then to the fine leak test (B1). The gross leak procedure will remove all leaking devices with leak rates
greater than 5 X 10-6 atm-cm3/sec.
2.2.5.4.1 Alternate β method. The surface sorption can also be determined by measuring the Beta (β) emission from any
Kr85 absorbed into surface materials. The β particles will not penetrate the walls of the device; therefore, β emission
detection means Kr85 is on the outer surfaces of a device. The β readings are monitored until they dissipate confirming the
surface is free of Kr85 gas. This time to dissipate is the “wait time”.
2.2.5.4.2 Removal of surface sorption. Devices with cavities > 0.1 cm3, with leak rates in the fine leak range, will not lose
their internal Kr85 gas in < 1 Hour. Therefore, such devices may be placed in a vacuum-oven at temperatures up to 100ºC
and near total vacuum for 15-20 minutes following pressurization for B1 without the concern of losing internal Kr85. This
vacuum-oven procedure is capable of removing surface absorbed Kr85 from paints and labels. The removal of that surface
Kr85 from the surface materials is accurately confirmed by verifying that there is no Beta radiation from the surface.
METHOD 1014.17
3 May 2018
13
MIL-STD-883-1
2.2.6 Test Procedure B1, Fine Leak; B2, Gross Leak; or B2/B1 Gross/Fine combination test. The devices shall be placed
in a radioactive tracer gas pressurization chamber. The pressurization chamber may be partially filled with inert material
(aluminum filler blocks), to reduce the cycle time and increase the efficiency of the system. It is the equipment
manufacturer’s recommendation that all ‘small-cavity’ devices be measured within 10 minutes after removal from the
pressurization tank.
a. B1 - Fine Leak: The tank shall be evacuated to 0.5 torr. The devices shall be subjected to a minimum of 2
atmospheres absolute pressure of Kr85/air mixture. Actual pressure and soak time for B1 shall be determined in
accordance with 2.2.5.1. When the ‘soak time’ is completed, the Kr85/air mixture shall be transferred to storage
until 0.5 torr pressure exists in the pressurization chamber. The storage cycle shall be completed in 3 minutes
maximum as measured from the end of the pressurization cycle or from the time the tank pressure reaches 60 psia
if a higher bombing pressure was used. The tank shall then immediately be backfilled with air and the devices
removed from the tank and measured within 1 hour after removal using a scintillation crystal equipped counting
station as in 2.2.4.1, 2.2.4.2, or 2.2.5.2. Device encapsulations that come under the requirements of 2.2.5.4 shall be
exposed to ambient air for a time not less than the ‘wait time’ determined by 2.2.5.4 (or following the bake cycle
described in 2.2.5.4.2). Device encapsulations that do not come under the requirements of 2.2.5.4 may be tested
without a ‘wait time’. The R value of 2.2.5.1 shall not be less than 500 counts per minute above background.
Note: If the devices are tested in the well crystal with the crystal wall shielded with a lead plug while measuring the
device, and a background of approximately 500 counts per minute is achievable when the Ratemeter is in the
“slow-time-constant” position, then reject values “R” of a minimum of 250 counts (net) above background may
be measured for rejection of devices in high sensitivity testing.
b. B2 - Gross Leak: Only product qualified under paragraph 2.2.2 shall be authorized to use this method. The devices
shall be placed in a pressure chamber. The chamber shall be filled with inert material (aluminum filler blocks) so
that the free volume is not greater than as qualified in 2.2.2. The tank shall be evacuated to 0.5 torr. The devices
shall be subjected to a minimum of 2 atmospheres absolute pressure of Kr85/air mixture and the bomb time no less
than 2 minutes. When the soak time is completed the Kr85/air mixture shall be transferred to storage until 2.0 torr
pressure exists in the pressurization tank. The storage cycle shall be completed in 3 minutes maximum as
measured from the end of the pressurization cycle. The tank shall then immediately be backfilled with air. The
devices shall be removed from the tank and measured within 10 minutes after removal using a scintillation crystal
equipped counting station as in 2.2.4.1, 2.2.4.2, 2.2.4.3 or 2.2.5.2. Any device indicating 500 counts per minute, or
greater, above the ambient background of the counting station shall be considered a gross leak failure. If the
devices are not all measured at the end of 10 minutes from removal from the pressurization chamber, the remaining
devices shall be returned to the pressurization chamber and re-pressurized to a minimum of 30 psia for a minimum
of 0.01 hrs, and then measured at the counting station within 10 minutes. The counting station shall be checked at
least once every shift using a Kr85 reference standard following manufacturer’s procedure, and a record of proper
function shall be maintained.
METHOD 1014.17
3 May 2018
14
MIL-STD-883-1
c. B2/B1 - Gross/fine combination: Only product qualified under paragraph 2.2.2 shall be authorized to use this method.
The devices shall be placed in a pressure chamber. The chamber shall be filled with inert material (aluminum filler
blocks) so that the free volume is not greater than as qualified in 2.2.2. The tank shall be evacuated to 0.5 torr.
Actual pressure and soak time shall be in accordance with B1 paragraph 2.2.5.1. The R value in counts per minute
shall not be less than 500 above background. When the soak time is completed the Kr85/air mixture shall be
transferred to storage until 2.0 torr pressure is in the pressurization chamber. The storage cycle shall be completed
in 3 minutes maximum as measured from the end of the pressurization cycle, or from the time the tank pressure
reaches 60 psia if a higher bombing pressure was used. The tank shall then immediately be backfilled with air. The
devices shall be removed from the tank and measured within 10 minutes after removal using a scintillation crystal
equipped counting station as in 2.2.4.1, 2.2.4.2, 2.2.4.3 or 2.2.5.2. Devices that require a “wait-time” per paragraph
2.2.5.4, which exceeds 10 minutes, cannot be subjected to this combination test. If all devices cannot be measured
within the 10 minute window, then the remaining devices shall be returned to the pressurization chamber and re-
pressurized to a minimum of 30 psia for a minimum of 0.01 hours, and then measured at the counting station within
10 minutes. The counting station shall be checked at least once every shift using a Kr85 reference standard
following manufacture’s procedure, and a record of proper function shall be maintained.
The actual Kr85 leak rate of the device tested using the radioisotope fine leak test shall be calculated with the following
formula (see Eq 3)):
(ACTUAL READOUT IN NET COUNTS PER MINUTE) X QS Eq (3)

Q =
R
Where:
Q = Actual Kr85 leak rate in atm cm3/s Kr85
QS and R are defined in 2.2.5.1.
METHOD 1014.17
3 May 2018
15
MIL-STD-883-1
2.2.7 Test condition B3, Radioisotope Wet Gross Leak Test.
2.2.7.1 Intended Use. This is designed for small packages with less than 0.1 cm3 internal free volume and packages that
have not qualified to 2.2.2. This test may be used for larger than 0.1 cm3 internal free volume packages. Packages up to
0.1 cm3 internal free volume suspected of very large leaks are commonly subjected to this test.
2.2.7.2 Apparatus. Apparatus for this test shall be as in 2.2.1 and as follows:
a. A container of sufficient volume to allow the devices to be covered with red dye penetrant solution, evacuated, and
subjected to air pressure in the same container.
b. Solutions:
(1) The red dye penetrant solution shall be kept clean and free of contaminants (including wash solvents). The
solutions shall be tested to verify the efficiency of the solution for both Kr85 gettering and visual detectability.
The most efficient red dye solution uses a mixture, by volume, of 95% light viscosity mineral oil and 5% oil-
based red dye indicator. The solution must be evaluated for Kr85 absorption and retention.
(2) The solvent for washing the devices after immersion shall be acetone.
2.2.7.3 Procedure. The following four steps shall be followed:
Step 1. The devices shall be immersed in the red dye penetrant solution and evacuated to a pressure of 100 torr (~ 24
inches Hg) or less for 10 minutes and then pressurized with air for 10 minutes minimum at 310 kPa (45 psia) minimum. The
devices shall be removed from the red dye penetrant solution and placed in a fine-screen basket and flushed with acetone
by applying a fine-spray of acetone to remove the surface film of the solution. It is recommended that the devices in the
fine-screen basket be held over funnel, with the funnel inserted into a large Erlenmeyer flask, (thus minimizing the acetone
vapors released into the room). Do not allow any acetone to contaminate the red dye penetrant solution. Immediately
following the wash, the devices shall be emptied onto a white surface and examined visually for red dye penetrant solution
exiting from any leaking devices. Look for evidence of red dye leakage that is apparent without using the aid of visual
magnification. Any devices with red dye penetrant solution leaking from them shall be rejected as gross leakers and
removed.
Step 2. The remaining devices shall then be placed in the radioisotope pressurization chamber. The chamber shall
be filled with inert material (aluminum filler blocks) so that the free volume is not greater than as qualified in 2.2.2. The
chamber is evacuated to a pressure of 0.5 torr. The devices shall then be pressurized to a minimum of 45 psia of Kr85/air
mixture for 0.2 hours minimum. The gas shall then be transferred to storage until a pressure of 2.0 torr maximum exists in
the tank. This transfer shall be completed in 2 minutes maximum. The chamber shall then be filled with air, and the devices
immediately removed from the tank and leak tested within 5 minutes after gas exposure, with a scintillation crystal equipped
counting station. It is recommended that batch sizes be kept small enough to allow all devices to be measured within 5
minutes. Any device indicating 500 c/m or greater above the ambient background of the counting station shall be
considered a gross leak. If all of the devices cannot be measured within 5 minutes, they shall be retested starting at the
beginning of step 2.
Step 3. Failing devices may cross contaminate compliant devices with red dye penetrant solution. Devices which
contain red dye penetrant solution may effervesce after being pressurized with Kr85 and may lose the Kr85 trapped within
them. The devices shall be emptied onto a white surface and examined carefully for any red dye penetrant solution exiting
from any leaking devices. Any devices with red dye penetrant solution leaking from them shall be rejected as gross leakers.
Gross leak failures with less than 0.1 cm3 internal free volume shall be visually inspected at 30X to confirm that the red dye
penetrant solution is actually leaking from the device.
Step 4. If any devices are rejected by Steps 1 – 3, the procedure (starting with Step 2) shall be performed again until
no more gross leakers are found.
METHOD 1014.17
3 May 2018
16
MIL-STD-883-1
2.3 Test condition C, Perfluorocarbon gross leak.
2.3.1 Apparatus. Apparatus for this test shall consist of:
a. A vacuum/pressure chamber for the evacuation and subsequent pressure bombing of devices up to 105 psia up to
23.5 hours.
b. A suitable observation container with provisions to maintain the indicator fluid at a temperature of 125C and a
filtration system capable of removing particles greater than 1 micrometer in size from the fluid (condition C1 only).
c. A magnifier with a magnification in the range between 1.5X to 30X for observation of bubbles emanating from
devices when immersed in the indicator fluid (condition C1 only).
d. Sources of type I detector fluids, and type II indicator fluids as specified in Table II.
e. A lighting source capable of producing at least 15 thousand foot candles in air at a distance equal to that which the
most distant device in the bath will be from the source. The lighting source shall not require calibration but the light
level at the point of observation (i.e., where the device under test is located during observation for bubbles), shall be
verified (condition C1 only).
f. Suitable calibrated instruments to indicate that test temperatures, pressures, and times are as specified.
g. Suitable fixtures to hold the device(s) in the indicator fluid (condition C1 only).
h. A perfluorocarbon vapor detection system capable of detecting vapor quantities equivalent to 0.167 or 1/6 microliter
of type I fluid (condition C3 only).
i. The vapor detector used for condition C3 shall be calibrated at least once each working shift using a type I fluid
calibration source, and following the manufacturer's instructions.
TABLE II. Physical property requirements of perfluorocarbon fluids. 1/
Property Type I Type II Type III ASTM

test method
Boiling point (C) 50-95 140-200 50-110 D-1120
Surface tension (Dynes/cm) < 20 D-971

at 25C D-1331
Density at 25C (gm/ml) > 1.6 > 1.6 > 1.6
Density at 125C (gm/ml) > 1.5
Dielectric strength > 300 > 300 > 300 877

(volts/mil)
Residue (µgm/gm) < 50 < 50 < 50 D-2109
Appearance Clear colorless NA
2.3.2 Test condition C1 or C3, perfluorocarbon gross leak. Test condition C1 is a fixed method with specified conditions
that will ensure the test sensitivity necessary. Test condition C2 has been replaced by C1. Test condition C3 is a fixed
method that uses a vapor detection system instead of an indicator bath.
METHOD 1014.17
3 May 2018
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MIL-STD-883-1
2.3.3 Procedure applicable to fixed (C1) method. The devices shall be placed in a vacuum/pressure chamber and the
pressure reduced to 5 torr or less and maintained for 30 minutes minimum. The vacuum cycle may be omitted for packages
with an internal volume > 0.1 cm3. A sufficient amount of type I detector fluid shall be admitted to cover the devices. When
the vacuum cycle is performed, the fluid will be admitted after the minimum 30 minute period but before breaking the
vacuum. The devices shall then be pressurized in accordance with Table III. When the pressurization period is complete
the pressure shall be released and the devices removed from the chamber without being removed from a bath of detector
fluid for greater than 20 seconds. A holding bath may be another vessel or storage tank. When the devices are removed
from the bath they shall be dried for 2 ±1 minutes in air prior to immersion in type II indicator fluid, which shall be maintained
at 125C ±5C. The devices shall be immersed with the uppermost portion at a minimum depth of 2 inches below the
surface of the indicator fluid, one at a time or in such a configuration that a single bubble from a single device out of a group
under observation may be clearly observed as to its occurrence and source. The device shall be observed against a dull,
nonreflective black background though the magnifier, while illuminated by the lighting source, from the instant of immersion
until, expiration of a 30-second minimum observation period, unless rejected earlier.
For packages greater than 5 grams, the effects of package thermal mass shall be determined by evaluating each
package family with known leakers and measuring the time for bubbles to be observed. If the evaluation time exceeds the
30 seconds required for the observation time, then the observation time shall be extended to take into account the package
thermal mass effect. Alternate methods may be used to meet this intent provided the method is documented and made
available to the preparing or acquiring activity upon request.
2.3.3.1 Test condition C1, fixed method. Allowable fixed method conditions shall be as shown in table III, herein.
TABLE III: Condition C pressurization conditions.
Pressure 1/ Minimum pressurization

psia (min) time (hour)
C1 C3
30 23.5 12
45 8 4
60 4 2
75 2 1
90 1 0.5
105 0.5 N/A
1/ Do not exceed the capability or degrade the integrity of the device.
2.3.3.2 Failure criteria. A definite stream of bubbles or two or more large bubbles originating from the same point shall
be cause for rejection.
CAUTION: When the leak is large, the operator may notice a stream of liquid exiting the package without the release of
bubbles. This condition shall result in the package being rejected.
METHOD 1014.17
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MIL-STD-883-1
2.3.4 Test condition C3, perfluorocarbon vapor detection.
2.3.4.1 Procedure. The devices shall be placed in a vacuum/pressure chamber and the pressure reduced to 5 torr or
less and maintained for 30 minutes minimum. A sufficient amount of type I detector fluid shall be admitted to the pressure
chamber to cover the devices. The fluid shall be admitted after the 30 minute minimum vacuum period but before breaking
the vacuum. The devices shall then be pressurized in accordance with Table III. Upon completion of the pressurization
period, the pressure shall be released, the devices removed from the pressure chamber without being removed from a bath
of detector fluid for more than 20 seconds and then retained in a bath of perfluorocarbon fluid. When the devices are
removed from the fluid they shall be air dried for a minimum of 20 seconds and a maximum of 5 minutes prior to the test
cycle. If the type I detector fluid has a boiling point of less than 80C, the maximum drying time shall be 3 minutes.
The devices shall then be tested with a perfluorocarbon vapor detector that is calibrated in accordance with 2.3.1h and
2.3.1i. "Purge" time shall be in accordance with Table IV. Test time shall be a minimum of 3.5 seconds (unless the device
is rejected earlier) with the perfluorocarbon vapor detector purge and test chambers at a temperature of 125 ±5C, or 2.5
seconds minimum with the purge and test chambers at a temperature of 150 ±5C.
NOTE: Air dry, purge and test limits for each device shall be complied with in all cases, including stick to stick handling.
NOTE: Test temperature shall be measured at the chamber surface that is in contact with the device(s) being tested.
Device orientation within the test cell should maximize heat transfer from the heated chamber surface to the cavity
of the device within the capability of the equipment.
2.3.4.2 Failure criteria. A device shall be rejected if the detector instrumentation indicates more than the equivalent of
0.167 or 1/6 microliter of type I detector fluid in accordance with Table II.
TABLE IV. Purge time for condition C3.
Package with internal Purge time

free volume
(CM3) (seconds)
<0.01 <5
>0.01 <0.10 <9
>0.10 < 13
NOTE: Maximum purge time can be determined by cycling a device with a 0.02 to 0.05 inch hole and measuring the
maximum purge time that can be used without permitting the device to escape detection during the test cycle.
METHOD 1014.17
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MIL-STD-883-1
2.3.5 Precautions. The following precautions shall be observed in conducting the perfluorocarbon gross leak test:
a. Perfluorocarbon fluids shall be filtered through a filter system capable of removing particles greater than 1
micrometer prior to use. Bulk filtering and storage is permissible. Liquid which has accumulated observable
quantities of particulate matter during use shall be discarded or reclaimed by filtration for re-use. Precaution should
be taken to prevent contamination.
b. Observation container shall be filled to assure coverage of the device to a minimum of 2 inches.
c. Devices to be tested should be free from foreign materials on the surface, including conformal coatings and any
markings which may contribute to erroneous test results.
d. A lighting source capable of producing at least 15 thousand foot candles in air at a distance equal to that which the
most distant device in the bath will be from the source. The lighting source shall not require calibration but the light
level at the point of observation (i.e., where the device under test is located during observation for bubbles) shall be
verified.
e. Precaution should be taken to prevent operator injury due to package rupture or violent evolution of bomb fluid when
testing large packages.
METHOD 1014.17
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MIL-STD-883-1
2.4 Test condition for optical leak test, (C4 , C4 and C5).
2.4.1 Application. Optical Leak Test (OLT) applies to individual devices and to devices mounted on printed circuit boards
or higher level assemblies. The operation for the OLT system is based on the ability to deflect the lid or package. The
candidate package shall have a lid stiffness to deflect at least 0.005 microns/psi minimum. These test conditions are valid
for lidded devices constructed of metallic, ceramic or other materials which result in measurable deflection of the lid over
time as a result of pressure being applied. Generally, Helium is used as the pressure medium. Apparatus required shall
consist of suitable pressure or vacuum/pressure chamber with an integral interferometry leak detector. The optical leak
detector shall be preset and properly calibrated for an equivalent standard leak rate sensitivity sufficient to detect leakage to
the required levels stated in Table VII of paragraph 3. Leak rate is determined by the change in internal pressure of the
package of a known internal free volume over a known period of time. When this is normalized to one atmosphere pressure
(He) then divided by the test duration and multiplied by the internal free volume, OL (atm-cm3/sec)is determined. The leak
rate would be denoted as OLair for air or CDA (clean dry air), OLN2 for Nitrogen, or OLHe for Helium. The conversion factors
for these gases are listed in 1.1.c. If the test gas is air then no conversion is necessary and the OLT output can be directly
compared to the test limits listed in Table VII.
Note: Prior to performing optical gross/fine leak testing, the test designer will need to know the structural limits of the
package. Extreme pressure/vacuum may cause damage to some devices. The test designer will need to design the
test conditions around such limitations.
2.4.2 Apparatus. The apparatus required for test conditions C4, C4 and C5 optical leak test shall be as follows:
a. A laser interferometer to measure submicron lid deflection of one or more devices in response to a pressure change.
b. A chamber to provide a controlled pressure of up to 90 psia.
c. A means of measuring and inducing a small controlled pressure change and electronically calibrating the induced
pressure change to lid deflection for each device simultaneously in order to determine the lid stiffness in microns per
psi or equivalent units for each device.
d. A means of tracking the lid movement of each device simultaneously over time.
e. Processing electronics capable of using the measured lid position at the beginning and end of the test and the
calibrated stiffness (c) to determine the change in internal pressure of the device. This change in internal pressure
along with internal free volume and test duration is used to obtain leak rates OL.
f. An absolute pressure sensor installed that automatically accounts for changes in barometric pressure.
g. A temperature sensor (thermocouple) that is used for temperature variations for the Temperature Compensation
Factor (TCF).
h. A heater that is used during the initial device profile set up only, for determining the Temperature Compensation
Factor (TCF).
METHOD 1014.17
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MIL-STD-883-1
2.4.3 Apparatus initial setup. The optical gross/fine leak test equipment requires unique test parameters for each device
type. . Package set up and calibration shall be performed using two or more devices with leak rates less than the test limits
in Table VII. These set up devices will be used prior to production testing to determine if the optical leak tester can be used
to test this specific package type and also to determine the specific parameters, Pa, T, and nominal lid stiffness for
production testing. Pa and T are fixed values such that the test sensitivity is less than the test limits. Pa shall be the same
pressure used during test and T is the minimum time required to achieve passing leak rates. The measured lid stiffness for
each device (unique serial number) will be used to calculate the leak rate. This initial step can be skipped if the test set up
information for this specific package type and geometry has already been previously determined, documented, and
maintained in the system.
Note: Do not test the packages within 30 minutes of seam sealing or baking. The packages should be at the same ambient
temperature as the leak tester.
1.4.4 Process monitoring. A group of “system check devices” shall be used for system operation verification at the
beginning and end of each work shift. There shall be at least one device that is a gross leaker exhibiting no lid deflection,
one fine leaker having a leak rate greater than the applicable test limit in Table VII, and at least one known good device
having a leak rate less than the applicable test limits in Table VII. A leak rate log of the system check devices must be
maintained for auditing and to demonstrate that the leak rates continue to meet the criteria specified above. The leak rate
log and system check devices shall be made available to the qualifying activity. Checked devices shall be stored in a dry
box or dry nitrogen purge cabinet and handled with gloves to prevent leak path obstruction.
2.4.5 Leak rate. The optical leak test shall be performed with a test pressure (Pa) and time (T), which will provide the
leak rate sensitivity required. The leak rate is provided by the following equation (see Eq (4)):
OL = (V / TPa ) X –ln (∆Pf/∆Pi) Eq (4)
Where:
OL = The implied leak rate of the test (atm-cm3/sec He).
V = The internal free volume of the package cavity (cm3).
T = The test duration time (seconds).
∆Pi = The chamber test pressure (psig). Since the internal package pressure is assumed to be 0 psig at the start of the
test, the pressure difference is the test pressure.
∆Pf = The chamber test pressure – leakage (psig). Leakage is the change in pressure inside the package during the
test.
Leakage = lid movement (um) / lid stiffness (um/psi).
Pa = The chamber test pressure, psig converted to atmosphere as a function of altitude, e.g. 1 atm = 14.7 psia at sea
level.
2.4.5.1 Controlling sensitivity by controlling test time, pressure, and temperature. As stated above, for a specific package
lid thickness, and volume V, the leak rate sensitivity OL is increased by increasing the test time T and chamber pressure Pa.
A temperature increase of 2 °C or more during a test can cause the internal pressure of the device to increase and raise the
lid up as if the device were leaking. Therefore, a means to compensate leak rate measurements for changes in room
temperature and fluctuations in barometric pressure over long test times (> 45 minutes) shall be implemented. The
Temperature Compensation Factor (TCF) will prevent a hermetic device from being falsely rejected. The TCF is determined
by running devices with leak rates less than the test limits in Table VII with the same test parameters used in production. To
set up the TCF for a new part type, a heater is used to raise the chamber temperature by 2 °C to 3 °C over the test time.
The ΔPD (change in internal pressure of the device, also called leakage) will be measured which is the result of the device
temperature changing and thermal mismatch between the lid and base. The heater is not used in production, only for the
one-time test profile set-up run. The units for TCF are psi / °C and allows the OLT system to adjust ΔPD (leakage) for
temperature prior to calculating the leak rate.
METHOD 1014.17
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MIL-STD-883-1
2.4.6 Procedure for optical leak test, C4 , C4 and C5. The completed device(s) shall be placed in the sealed test
chamber. An optical interferometer is set to observe the package lid(s). The sealed test chamber is then pressurized or
evacuated (vacuum) to a test pressure no higher than the maximum design pressure/vacuum as determined by the package
manufacturer or the design limit of the chamber. For the duration of the test, the chamber pressure/vacuum is modulated
sufficiently to obtain lid stiffness calibration for each device. The deflection of the lid(s) is measured with the optical
interferometer. The deflection of the lid(s), is measured for each package in the field of view simultaneously.
2.4.6.1 Failure criteria.
a. The failure criteria for Gross Leak, C4, is defined when one of the following two operational test characteristics is
observed.
1. One instance is when the optical interferometer does not detect deflection of the lid as the chamber pressure was
changed.
2. The second is when the lid initially deflects under pressure but quickly returns towards its unpressurized state due to
the equalization of the internal device pressure caused by a gross leak.
b. The failure criteria for combined Gross and Fine Leak, C4 & C5 , is if the optical interferometer did not detect deflection
of the lid as the chamber pressure was changed or that provided in Table VII of paragraph 3.
2.4.7 Test condition C4, C4 and C5 retest. The package may be retested due to equipment malfunction or operator error
causing the package to not be properly tested, or the test not being completed. If approved by the qualifying activity, retest
may be performed due to other conditions and shall be documented accordingly. The proper wait time before performing a
retest shall ensure the internal package pressure has equalized with the outside pressure. This proper wait time shall be
determined through repeated testing of a fine leaking package and the data shall be available to the acquiring or qualifying
activity upon request. The retesting shall be documented and records shall be retained for traceability.
2.4.7.1 Method for retest without error code (manual fringing test). If the system reports a device as “retest,” the
device is most likely a gross leaker. A “retest” response implies collective data is insufficient to distinguish a gross leaker
from a non leaking device. Therefore, the manual fringing method must be performed in accordance with the equipment
manufacturer’s defined procedures. This additional testing shall be documented and records shall be retained for
traceability.
2.4.7.2 Method for retest with error code. If the system reports a device as “retest” with an error code, a retest may be
performed in accordance with the equipment manufacturer’s defined procedure. This procedure must address the proper
wait time necessary to ensure the internal package pressure has equalized with the outside pressure before the test is
repeated. This proper wait time shall be determined through repeated testing of a fine leaking package, and the data shall
be available to the acquiring or qualifying activity upon request. This additional testing shall be documented and records
shall be retained for traceability.
2.5 Test condition D, penetrant dye gross leak.
Note: This is a destructive test for verification per the requirements of 1.3.1 Retest.
2.5.1 Apparatus. The following apparatus shall be used for this test:
a. Ultraviolet light source with peak radiation at approximately the frequency causing maximum reflection of the dye
(3650 Å for Zyglo; 4935 Å for Fluorescein; 5560 Å for Rhodamine B, etc.).
b. Pressure chamber capable of maintaining 105 psia.
c. Solution of fluorescent dye (such as Rhodamine B, Fluorescein, Dye-check, Zyglo, FL- 50, or equivalent) mixed in
accordance with the manufacturer's specification.
d. A magnifier with a magnification in the range between 1.5X to 30X for dye observation.
METHOD 1014.17
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MIL-STD-883-1
2.5.2 Test condition D, penetrant dye gross leak. The pressure chamber shall be filled with the dye solution to a depth
sufficient to completely cover all the devices. The devices shall be placed in the solution and the chamber pressurized at
105 psia minimum for 3 hours minimum. For device packages which will not withstand 105 psia, 60 psia minimum for 10
hours may be used. The devices shall then be removed and carefully washed, using a suitable solvent for the dye used,
followed by an air-jet dry. Remove the lid from the device. The devices shall then be immediately examined under the
magnifier using an ultraviolet light source of appropriate frequency.
2.5.2.1 Failure criteria. Any evidence of dye penetration into the device cavity shall constitute a failure.
2.6 Test condition E, weight gain gross leak.
2.6.1 Apparatus. Apparatus for this test shall consist of:
a. A vacuum/pressure chamber for the evacuation and subsequent pressure bombing of devices up to 90 psia up to 10
hours.
b. An analytical balance capable of weighing the devices accurately to 0.1 milligram.
c. A source of type III detector fluid as specified in Table II.
d. A filtration system capable of removing particles greater than 1 micrometer in size from the perfluorocarbon fluid.
e. Suitable calibrated instruments to measure test pressures and times.
2.6.2 Procedure. The devices shall be placed in an oven at 125C for 1 hour minimum, after which they shall be allowed
to cool to room ambient temperature. Each device shall be weighed and the initial weight recorded or the devices may be
categorized into cells as follows. Devices having a volume of <0.01 cm3 shall be categorized in cells of 0.5 milligram
increments and devices with volume >0.01 cm3 shall be categorized in cells of 1.0 milligram increments. The devices shall
be placed in a vacuum/pressure chamber and the pressure reduced to 5 torr and maintained for 1 hour except that for
devices with an internal free volume >0.1 cm3, this vacuum cycle may be omitted. A sufficient amount of type III detector
fluid shall be admitted to the pressure chamber to cover the devices. When the vacuum cycle is performed, the fluid shall be
admitted after the 1-hour period but before breaking the vacuum. The devices shall then be pressurized to 75 psia
minimum except that 90 minimum psia shall be used when the vacuum cycle has been omitted. The pressure shall be
maintained for 2 hours minimum. If the devices will not withstand the 75 psia test pressure, the pressure may be lowered to
45 psia minimum with the vacuum cycle and the pressure maintained for 10 hours minimum.
Upon completion of the pressurization period, the pressure shall be released and the devices removed from the pressure
chamber and retained in a bath of the perfluorocarbon fluid. When the devices are removed from the fluid they shall be air
dried for 2 ±1 minutes prior to weighing. Transfer the devices singly to the balance and determine the weight or weight
category of each device. All devices shall be tested within 4 minutes following removal from the fluid. The delta weight
shall be calculated from the record of the initial weight and the post weight of the device. Devices which were categorized
shall be separated into two groups, one group which shall be devices which shifted one cell or less and the other group
which shall be devices which shifted more than one cell.
2.6.3 Failure criteria. A device shall be rejected if it gains 1.0 milligram or more and has an internal volume of <0.01 cm3
or if it gains 2.0 milligrams or more and has an internal volume of > 0.01 cm3. If the devices are categorized, any device
which gains enough weight to cause it to shift by more than one cell shall be considered a reject. A device which loses
weight of an amount which if gained would cause the device to be rejected may be retested after it is baked at 125C for a
period of 8 hours.
METHOD 1014.17
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MIL-STD-883-1
2.7 Test condition G1, radioisotope thermal leak test.
2.7.1 Application. This test is for the evaluation of package hermetic integrity at elevated temperature. It is intended to
verify that the package structural design will maintain hermetic integrity at elevated temperatures. Devices to be evaluated in
this thermal leak test shall be packages that should not have been subjected to any prior liquid immersion testing (e.g. thermal
shock, bubble test). The devices to be tested for thermal leakage shall first be subjected to a fine and dry gross leak test, to
at least the sensitivity requirement for that package in the standard, and the hermeticity to that sensitivity, establishing the
package is hermetic at ambient temperature.
2.7.2 Apparatus. Apparatus for this test shall consist of the following:
a. Radioactive tracer gas pressurization console containing Kr85/air mixture. A Kr85 pressure/vacuum thermal test
chamber capable of evacuation and pressurization at temperatures, and thermal cycling from ambient temperature
to maximum temperature of the test desired while maintaining Kr85/air pressure.
b. Counting station as in paragraph 2.2.1b excluding Tunnel Scintillation Crystal.
c. A tracer gas as in paragraph 2.2.1c.
2.7.3 Testing parameters. Prior to the thermal-radioisotope test, the devices shall be pre-tested to the sensitivity
requirement for that package in the standard. The bombing pressure and soak time for the pre-test shall be established for
the package following 2.2.5.1.
2.7.3.1 Determination of counting efficiency (k). Shall be as in 2.2.4
2.7.3.2 Evaluation of surface sorption. Shall be as in 2.2.5.4
2.7.4 Procedures. The devices shall be placed in the radioactive tracer gas thermal-pressurization chamber. The tank
shall be evacuated to 0.5 torr. The devices shall be subjected to a pressure of Kr85/air mixture at a pressure of 60 psia,
(typical), or a minimum of 30 psia (dependent upon the structural compatibility of the package).
2.7.4.1 Thermal test. The devices are placed in the thermal/pressure chamber and pressurized with Kr85/air mixture to
the pressure established in 2.2.5. The chamber is then heated to a temperature in the range of 100ºC to 125ºC and
maintained at the elevated temperature for a minimum of 10 minutes. The heating rate should be 1ºC per minute minimum
or as specified. The temperature is then returned to ambient, at which time the Kr85 is returned to storage and the devices
are removed from the thermal/pressure chamber and measured at the scintillation crystal detection station for any Kr85 gas
trapped within the devices. Device encapsulations that come under the requirements of 2.2.6 shall be exposed to ambient
air for a time not less than the wait time determined by 2.2.5.4. In no case will the time between removal from the
pressurization chamber and measurement exceed 60 minutes. This test is frequently applied to devices that have indicated
leakage at ambient temperature in order to establish if they open to a larger leak rate at temperature.
2.7.5 Failure criteria. This test is a “Go-No-Go” test to detect packages that ‘open-up’, or become non-hermetic at
elevated temperature. The detection of a measurable amount of Kr85, (greater than 500 c/m above ambient background),
within the part after exposure to Kr85 pressure at temperature indicates a “thermal-reject”, (hermetic failure at elevated
temperature).
Note: A thermal reject may be placed in a vacuum oven and the temperature increased for 10 minutes minimum, at 10ºC
intervals, and the device removed to measure the Kr85 content after each 10ºC increase, until the temperature is
reached at which the Kr85 reading begins to decrease, indicating the temperature at which the device opened during
pressurization. This will indicate the approximate temperature at which the device is leaking, (or increasing its leak
rate).
METHOD 1014.17
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MIL-STD-883-1
2.8 Test condition CH, cumulative helium leak test.
2.8.1 CH1 and CH2 combined fine/gross leak. Test Conditions CH1 “fixed” method and CH2 “flexible” method expand the
range of He fine leak to include the gross leak range and require the same test conditions using the Cumulative Helium
Leak Detector (CHLD) System. Test condition Z utilizes Helium to measure gross leaks and a selection of tracer gasses in
addition to Helium for the fine leak measurement.
2.8.2 Apparatus. The apparatus of the CHLD System.
2.8.2.1 Calibration Leak Standard. The apparatus for this procedure uses a mass spectrometer as in test condition A1
except that the optimum Calibration Leak Standard is 5 x 10-10 atm cm3/sec and, since the slope of the accumulated Helium
is a linear function, measurements beyond 10-12 are achievable if the calibration slope ratio to the background slope is
greater than 100. A Helium Validation Standard of 5 x 10-12 shall be used to validate the sensitivity and linearity of the lower
leak rate range and a 1 x 10-8 Helium leak standard used for the higher range. The leak rate standards shall be recalibrated
at least once per year.
2.8.2.1.1 Pumping system. The leak detector indicator shall be calibrated using a diffusion-type calibrated standard leak
at least once every working shift. In addition, the test apparatus for CH1 and CH2 utilizes a specialized pumping system that
enables the volume of Helium released to be measured as well as the rate of change or “slope” of the Helium. The leak rate
is determined from the slope measurement for fine leaks and from the volume for gross leaks:
2.8.2.1.2 Chamber volume. The volume of the test chamber used for leak rate measurement should be held to the
minimum size practical, since a ratio of the chamber dead volume (Vc) to the device internal volume (Vd) of greater than 100
will reduce the sensitivity limits when detecting gross leaks. The maximum ratio of test chamber dead volume to device
internal volume Vc/Vd must be established for individual part testing and batch testing to insure a gross leak amplitude will
be detected with a signal to background ratio of at least 3 to one. This ratio is a function of the Helium content of the purge
gas as well as the internal volume and number of devices to be batch tested.
2.8.2.1.3 Purge pump. A purge gas with a Helium content less than 1 ppm.
2.8.3. Procedure applicable to CH1 "fixed" and CH2 "flexible" methods. The completed devices(s) shall be placed in a
sealed chamber per conditions A1 and A2 as specified in 2.1.2.1. (The evacuation pressure if used shall be documented).
The pressure shall then be relieved (an optional air wash may be applied or other technique to reduce the effects of surface
sorption as specified in 2.8.3.2 can be used) and each specimen transferred to another chamber or chambers which are
connected to the evacuating system and a mass-spectrometer-type leak detector. When the chamber is evacuated, any
tracer gas which was previously forced into the specimen will thus be drawn out and indicated by the leak detector as a
measured leak rate (R). The number of devices removed from pressurization for leak testing shall be limited such that the
test of the last device can be completed within the dwell times listed in Table 1).
Note: The flexible method CH2 shall be used unless otherwise specified in the acquisition document, purchase order, or
contract.
2.8.3.1 Dwell Time. Dwell time for the CH1 and CH2 methods shall be 0.5 hour for packages having internal free volumes
≤ 0.05 cm3 and 1 hour for packages having internal free volumes > 0.05 cm3. For packages with internal free volumes >
0.05 cm3, the maximum dwell time t2 may be increased up to a maximum of 4 hours. Prior to increasing dwell times, the
manufacturer or test facility shall qualify a procedure for each package type to ensure there are no gross leak escapes at
the maximum dwell time proposed. This procedure shall address any technique used to mitigate surface sorption as stated
in 2.8.3.3.
METHOD 1014.17
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MIL-STD-883-1
2.8.3.2. Evaluation of surface sorption and wait time. All device encapsulations consisting of glass, metal, and ceramic
or combinations thereof including coatings and external sealants, shall be evaluated for surface sorption of the leak test
tracer gas (such as Helium) before establishing the leak test procedures and parameters. Devices susceptible to surface
sorption cannot be tested until the surface sorption has dissipated to ≤0.5 R1. This is defined as the wait time.
The wait time is determined by testing lidded and, if possible, delidded representative samples at the proposed bombing
conditions. The R measurement and time duration for each lidded device shall be monitored until the R measurement falls
to ≤0.5 R1. Sorption may vary with pressure and time of exposure so that some trial may be required before satisfactory
exposure values are obtained. If the wait time does not yield adequate time to test parts within the required dwell time as
specified in 2.8.3.1, then one or more of the following can be implemented: (1) use the mitigation of surface sorption
strategy as described in 2.8.3.3; (2) use the procedure described in 2.8.3.1 to increase the dwell time; or (3) use the flexible
method CH2 to increase R1 and to shorten the wait time.
2.8.3.3 Mitigation of surface sorption. Three techniques (ventilation in ambient air, dry gas wash, and thermal bake out)
can be used to reduce the wait time as established in 2.8.3.2. The technique utilized depends on the tracer gas sorption
characteristics of the particular device to be leak tested and the sensitivity of the leak detector system. Typically, a shorter
Helium bomb time results in less Helium sorption and a shorter wait time; however; a shorter bomb time yields a much
smaller R1 value, which may exceed the sensitivity of the CHLD system. Prior to implementing a mitigation strategy, the
proposed strategy shall be qualified for each package type to establish the required sensitivity is not diminished.
2.8.3.3.1 Ventilation in ambient air. Many devices are leak tested without regard for surface effects, since the time it
takes to remove the devices from the Helium bomb and bring them to the leak detector is sufficient to reduce surface effects
to levels below the Helium (R1) test limit. In the past, devices were regularly allowed to sit in the open in a well ventilated
area for 15 to 30 minutes prior to conducting a leak test.
2.8.3.3.2 Dry gas wash. The practice of blowing a dry gas on the devices prior to leak testing to reduce the effects of
surface sorption is most effective on devices which are contaminated with surface moisture or other high vapor pressure
solvents such as IPA. Some ceramic devices with low porosity respond favorably to this blowing procedure. The CHLD test
method provides leak test measurements through the gross leak range. In the worst case, only atmospheric air is present in
the device. If dry Nitrogen is used to blow off surface adsorption, there is a potential to displace the room air in a gross
leaker with Nitrogen (Note: most commercial Nitrogen contains at least 1.0 ppm Helium where as room air contains at least
5.0 ppm Helium) which will reduce the sensitivity to a gross leak. If a dry gas is used, dry atmospheric air is preferred for the
CHLD test method.
2.8.3.3.3 Thermal bake out. Surface moisture, which is present from exposure to high humidity levels found in ESD work
areas, contributes strongly in each case to desorption rates. Heating works well for optical devices which have either plastic
or glass lenses attached to the outer surface of the device or include fiber optic interfaces. Devices with an internal
volume>0.1cm3 may be placed in a vacuum and/or baked at 100°C for no more than 20 minutes to assist with desorption of
Helium from the surface only during this time.
METHOD 1014.17
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MIL-STD-883-1
2.8.4 Test condition CH1. Fixed method shall be as in 2.1.2.2 utilizing Table V.
2.8.4.1 Test condition CH1 Table. The device(s) shall be tested using the appropriate conditions specified in Table V for
the internal free volume of the package under test. The t1 is the time under pressure and time t2 is the maximum time
allowed after the release of pressure before the device shall be tested. The fixed method shall not be used if the maximum
standard leak rate limit given in the performance specification is less than the limits specified herein for the flexible method.
TABLE V. Sample Table of Fixed Conditions for test condition CH1.
Sample Helium Bombing Conditions
V R1 Equivalent “L” Value

Volume of PE t1 t2 atm-cm3/sec Air equivalent leak
Package Pressure Minimum Maximum Helium leak rate in atm-cm3/sec
in [kPa+15] (psia+2) Exposure dwell time detector
(cm3) time in hours reading
(hrs +1-0) 1/
<0.05 [517] (75) 3.8 0.5 1 x 10-11 1 x 10-9

[620] (90) 1.58 0.5 5 x 10-12 1 x 10-9
>0.05<0.40 [517] (75) 1.22 1 1 x 10-11 5 x 10-9

[620] (90) .51 1 5 x 10-12 5 x 10-9
>0.40<0.50 [517] (75) 1.52 1 1 x 10-11 1 x 10-8

[620] (90) .63 1 5 x 10-12 1 x 10-8
>0.50<0.70 [517] (75) .53 1 1 x 10-11 1 x 10-8

[517] (75) .27 1 5 x 10-12 1 x 10-8
>0.70 <1.0 [413] (60) .95 1 1 x 10-11 1 x 10-8

[517] (75) .38 1 5 x 10-12 1 x 10-8
>1.0<1.5 [413] (60) 1.42 1 1 x 10-11 1 x 10-8

[517] (75) .57 1 5 x 10-12 1 x 10-8
>1.5<5.0 [413] (60) 4.75 1 1 x 10-11 1 x 10-8

[517] (75) 1.9 1 5 x 10-12 1 x 10-8
>5.0<10.0 [310] (45) 12.7 1 1 x 10-11 1 x 10-8

[413] (60) 4.75 1 5 x 10-12 1 x 10-8
>10.0<20.0 [310] (45) 25.3 1 1 x 10-11 1 x 10-8

[310] (45) 12.66 1 5 x 10-12 1 x 10-8
1/ For packages with internal free volumes > 0.05 cm3, the maximum dwell time t2 may be increased up to a
maximum of 4 hours as specified in 2.8.3.1.
METHOD 1014.17
3 May 2018
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MIL-STD-883-1
2.8.5 Test condition CH2.. Flexible method shall be as in 2.1.2.3.
2.8.5.1 Package volume and leak rate limits for CH1 and CH2. For test method CH1 and CH2, the minimum size package
is determined by the ability of the apparatus to effectively detect a gross leak within the dwell time after the device has been
removed from the tracer gas pressurization chamber with a signal to noise (background) ratio of at least 3 to one. It may be
necessary to use a shorter test interval if the test chamber has a high background level of Helium or the surface sorption,
(as determined in 2.8.3.2), of the device is high. The only limit on maximum size is the size of the test chamber to
accommodate the device under test. A gross leak for this test method is defined as a hole in the package at least 0.010
inches, (0.254), mm in diameter or smaller. With an appropriate setup and technique, as defined by the equipment
manufacturer, a device without a seal or completely missing a lid can be detected as a gross leak. Prior to using this gross
leak verification technique, the manufacturer or test facility shall qualify the procedure, and create a profile for every part, for
each package type/volume, and associated test method to ensure the system setup is optimized to detect a gross leak. In
the worst case, a device with a gross leak will only contain atmospheric air and the instrument shall demonstrate adequate
sensitivity, i.e., the ability to measure the 5.0 ppm Helium in ambient air contained in a device as a gross leak. The
demonstrated minimum detectable leak rate for this test method is < 4 x 10-14 atm-cm3/sec; however, the design of the
apparatus test chamber as well as the ambient laboratory environment can increase or decrease this limit.
2.8.6 Test condition Z. CHLD direct measurement of leak rates using either Hydrogen, Helium, Methane, Neon,
Nitrogen, Oxygen, Argon, Carbon Dioxide, Krypton, Xenon, or Fluorocarbons as a fill gas or bombing fluid.
2.8.6.1 CHLD direct measurement of Fill Gas fine/gross leak combination.
2.8.6.1.1 Apparatus. CHLD system as used in condition CH but with a mass spectrometer capable of measuring the Fill
gases such as Hydrogen, Helium, Methane, Neon, Nitrogen, Oxygen, Argon, Carbon Dioxide, Krypton, Xenon, or
Fluorocarbons, (as an example), and a calibration standard in addition to Helium for each of the other Fill gases to be
tested, in the same order of magnitude as the leak test limit for that respective gas. A signal to noise ratio of 5 to one or
greater must be maintained during calibration and testing. It is expected that in some cases a high tracer gas background
will be present and some means such as purging with a different gas should be employed to help remove the surface
adsorbed tracer gas from the device under test. An example would be to use Carbon Dioxide as a purge gas for a tracer
gas of Argon on a device filled with a percentage of Argon or bombed with Argon. Both fine and gross leak determinations
are made with Helium as well as a fine leak determination using the alternate fill gas. For example, a device filled with a
25% Helium 75% Argon mix would have a gross leak amplitude measurement of Helium to test for a gross leak and two fine
leak measurements conducted simultaneously for both Helium and Argon. If the device was only filled with Argon, the same
measurements are taken where the Helium information would represent gross or large fine leaks and the tracer gas
measurement would represent the fine leak rate.
METHOD 1014.17
3 May 2018
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MIL-STD-883-1
2.8.6.1.2 Procedure. The device under test shall be placed in a test chamber (no sooner than 60 minutes from the time
the device is removed from its sealing environment and placed in ambient air) with a corresponding dead volume no greater
than 10 times the internal volume of the test device. Procedures and requirements for operation are the same as procedure
CH. Gross leak testing requires the pump down of the test chamber be characterized and in the worst case, the Helium
level from atmospheric air contained in the device should be at least 3 times the background to be able to positively identify
a gross leak. Fine leaks are determined by measuring the amplitude of the leak test tracer gas and ratioing this value to the
amplitude of the calibration leak standard (except for Helium where the slope is measured), If the device is filled with 100%
Helium, (as an example), the measured leak rate divided by its ratio from the table below shall be considered the air
equivalent leak rate. If only 10% Helium is contained in the fill gas, then the previous value would be multiplied by 10 for the
air equivalent leak rate. The following formula would be used for the general case (see Eq (5)):
L = (R1/r)/C Eq (5)
Where:
L = Equivalent standard leak rate limit of table VII in atm-cm3/sec
R1 = Calculated leak rate of the tracer gas in atm-cm3/sec
r = Ratio of the square root of the mass numbers for the tracer gas from Table VI
C = Concentration of the tracer gas in the device under test normalized to 1, i.e. 50% = 0.5
Solving the above equation (5) for R1 yields:

Eq (6)
R1 = rLC
The following example is provided for a 0.01 cm3 device filled with 10% Helium:
Eq (7)
R1 = 2.68 x 1.0E-09 x 0.1 = 2.68 X 10-10 atm-cm3/sec
The following Table VI provides the relationship between Air Equivalent Leak Rate and the leak rate of various fill gasses:
TABLE VI. Ratio of Square Roots of Mass Numbers to Air.
Hydrogen Helium Neon Nitrogen Air Oxygen Argon Krypton Xenon Fluorocarbon
Mass 2 4 20 28 28.7 32 40 84 136 269
% in air 50ppb 5ppm 18ppm 78% 100% 21% 1% 1ppm 90ppb trace
Sq root 1.41 2 4.47 5.29 5.36 5.66 6.32 9.16 11.7 16.4
ratio 3.80 2.68 1.19 1.01 1.00 .947 .848 .585 .458 .327
Since the Helium in ambient air is used to detect gross leaks and the Helium ingress from ambient air can be used to
measure large fine leaks, devices may be subjected to multiple leak tests during the first 60 days after seal without a
requirement for re-bombing the device with the fill gas. This time interval can be extended for particular devices where it can
be demonstrated that the fill gas used for the leak test measurement will not change its concentration by more than 10%
during this interval at the leak rate given in paragraph 3 for the respective device volume.
2.8.6.2 CHLD bombing with gasses other than Helium fine/gross leak combination.
2.8.6.2.1 Apparatus. CHLD system as in 2.8.2.
METHOD 1014.17
3 May 2018
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MIL-STD-883-1
2.8.6.2.2. Procedure. As in CH2, 2.8.5 except that when using the Howl-Mann equation (2.1.2.3), the fixed value 2.69
(MA/M which is the ratio of the square roots for Helium) should be replaced with the appropriate ratio from Table VI for the
tracer gas being used to bomb the devices. The gross leak rate is determined by sensing the ingress of Helium from
ambient air into the device and therefore leak tests should not be conducted in less than 60 minutes from the time a device
is removed from the bombing chamber. This time interval is necessary to allow a sufficient gas exchange to occur within the
device between the tracer gas (in this case not Helium) and ambient air so that gross leaks can be detected. In some cases,
surface desorption effects of the tracer gas will have to be characterized and mitigated as in 2.8.3.1.1.
2.8.6.3 CHLD re-screening devices gross leak tested with Fluorocarbons. It has been demonstrated that a Helium fine
leak measurement can be skewed by as much as one order of magnitude if the leak path is plugged by a Fluorocarbon fluid
typically used for the bubble test or gross leak test. When re-screening legacy devices, it may be advantageous to bomb the
devices with Helium and then conduct a leak test as in 2.8.5 where the leak rate of Helium is measured simultaneously with
the measurement of Fluorocarbons left over from the previous bubble test.
2.8.6.3.1 Apparatus. CHLD system as in 2.8.6.1.1.
2.8.6.3.2 Procedure. As in 2.8.6.2.2 where the Fluorocarbon leak rate is used on a relative basis to determine whether
devices are in “Family”. Previous tests have indicated a noticeable difference between devices which have plugged leak
paths and fine leaks. Since the fine leak rate can be expected to be skewed to a lower measured leak rate in an
unpredictable manner, the interpretation of the test results must be made on a case by case basis and validated by
conducting IGA analysis on selected devices. This measurement process has produced prediction results of 100% for
“good” devices and 95% for “bad” devices (devices which contain large concentrations of Fluorocarbons in addition to large
amounts of water when subjected to the Test Method 1018 for IGA). The 5% false “bad” prediction rate comes from the
inability to determine whether the Fluorocarbons are coming from a plugged leak path or from surface porosity or other
mechanical defect which does not extend into the hermetic cavity. It has also been demonstrated that if devices are
subjected to a 100 ºC bake out in a 1 X 10-6 Torr vacuum chamber for 72 hours prior to bombing and leak testing, the
effects of Fluorocarbon plugging becomes a non-issue.
2.8.6.4 Package volume and leak rate limits for condition Z. Leak rate range limits are the same as condition CH, and
are dependent on the performance of an individual test system, but an expected typical range would be from the gross leak
as defined in condition CH, 2.8.5.1 to 1.0 X 10-10 atm-cc/sec for tracer gasses other than Helium.
2.8.6.5 Failure criteria. The failure criteria for Fine Leak is provided in Table VII of paragraph 3.
2.8.7 Summary. The following conditions shall be specified in the applicable performance specification:
a. Test condition letter when a specific test is to be applied (see 1.3.).
b. Accept or reject leak rate for test conditions CH1, CH2, or Z when other than the accept or reject leak rate
specified herein applies (see Table VII of paragraph 3).
METHOD 1014.17
3 May 2018
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MIL-STD-883-1
2.8.8 Notes.
1. Any device that has been subjected to Fluorocarbon leak testing will then interfere with subsequent dry gas
leak testing. This is most noticeable with helium leak testing as it is known to reduce the measured leak rate
by at least one order of magnitude. The devices may be tested per 2.8.6.2.or 2.8.6,3 using out of family
criteria, however, these tests must be validated on a case by case basis using IGA test Method 1018 on
select devices provided that the lot of devices is large enough to support the validation tests.
2. When retesting devices to test condition H1, H2 or CH, the history of device exposure to helium including
dates, backfilling performed, tracer gas concentrations, pressure, and time exposed, should be known in
order to ensure reliable results. The sum of the bombing times and the total dwell time from the first bombing
interval to the expected subsequent leak test can be used in the Howl-Mann equation to compute a new R1
value if no Helium was sealed in the device. Whenever parts are sealed in helium or prior helium testing may
have been performed on a device, the internal helium content can be calculated from the following formula
(see Eq (8)):
QHe-total = QHe + pi(e-( LHe t/V) )

Eq (8)
Where:
QHe-total = the total Helium contained in the package at the time of test
pi = the atmospheres of Helium sealed within the device
LHe = the true Helium leak rate
t = the time between seal and test
V = the internal volume of the device in cm3.
QHe = the amount of Helium forced into the device during bombing
QHe = {PE-[ pi(e-( LHe t/V) )]}(1 - e-( LHe t/V) ) Eq (9)
Where:
PE = bombing pressure in absolute atmospheres
T = the bombing time in seconds
Once QHe-total is known, the leak rate test limit (R1) can be determined from 2.8.6.1.2 Equation (6).
3. Any device detected as a marginal reject using test condition CH and no leak testing history is available can
be retested using a different dry gas medium as in 2.8.6.2.
4. If the history of the device indicates that it has been subjected to fluorocarbon fluid testing, or if there is no
history evidencing that it has not been, then the device must be assumed to have fluorocarbon contamination
and the recommendations of 2.8.8. Note 3 must be followed or the device tested per 2.8.6.2 or 2.8.6.3.
METHOD 1014.17
3 May 2018
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MIL-STD-883-1
3. FAILURE CRITERIA. Unless otherwise specified, any device tested for Fine Leak that exhibits a leakage rate equal to
or greater than the test limits of table VII shall be considered a failure.
TABLE VII. Test limits for all fine leak methods. 1/ 2/
Internal Free Volume of L Failure Criteria L Failure Criteria

package atm-cm3/sec (air) atm-cm3/sec (air)
(cm3)
Hybrid Class H, and
Monolithic Classes B, S, Q and Hybrid Class K only
V
≤ 0.05 5 X10-8 1 X 10-9
>0.05 - ≤ 0.4 1 X 10-7 5 X 10-9
> 0.4 1 X 10-6 1 X 10-8
1/ Leak rates for test conditions providing results in terms other than air must be converted to air equivalent leak rates
using the conversion factors of 1.1.c. for comparison with this table’s requirements.
2/ A purchase order may require space product failure criteria to be applied to non-space product for delivery.
3.1 Residual Krypton. Facilities with Laboratory Suitability from the qualifying activity for performing Kr85 testing shall
have a documented procedure that is used to verify that the residual Krypton in tested devices are at an acceptable level
(each lot/devices) as specified by applicable Nuclear Regulatory Agency requirements prior to shipping back to customers.
3.2. Failure of test equipment. Facilities with Laboratory Suitability from the qualifying activity shall inform the qualifying
activity immediately if there are any problems with the equipment that may affect the proper testing and/or test results, as
reflected in this test method.
a. Test condition letter when a specific test is to be applied (see 1.3).
b. Accept or reject leak rate for test condition A or B or C5 when other than the accept or reject leak rate specified
herein applies (see paragraph 3).
c. Where applicable, measurements after test (see 1 3).
d. Retest acceptability.
e. Order of performance of fine and gross if other than fine followed by gross except when using C4/C5 (see 1.3).
f. Where applicable, the device package pressure rating shall be specified if that rating is less than 75 psia.
g. Leak testing with conditions C4 and C5 also includes package testing on completed assemblies (PC boards),
packages with external absorbing materials (connectors), or other special conditions.
METHOD 1014.17
3 May 2018
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MIL-STD-883-1
METHOD 1014.17
3 May 2018
34
MIL-STD-883-1
METHOD 1015.12
BURN-IN TEST
1. PURPOSE. The burn-in test is performed for the purpose of screening or eliminating marginal devices, those
with inherent defects or defects resulting from manufacturing aberrations which cause time and stress dependent
failures. In the absence of burn-in, these defective devices would be expected to result in infant mortality or early
lifetime failures under use conditions. Therefore, it is the intent of this screen to stress microcircuits at or above
maximum rated operating conditions or to apply equivalent screening conditions, which will reveal time and stress
dependent failure modes with equal or greater sensitivity.
2. APPARATUS. Details for the required apparatus shall be as described in method 1005.
3. PROCEDURE. The microelectronic device shall be subjected to the specified burn-in screen test condition (see
3.1) for the time and temperature specified (see method 5004 for the appropriate device class level) or, unless
otherwise specified, for an equivalent time and temperature combination as determined from table I (see 3.1.1 and
3.1.2). QML manufacturers who are certified and qualified to MIL-PRF-38535 may modify the time or the
temperature condition independently from the regression conditions contained in table I or the test condition/circuit
specified in the device specification or standard microcircuit drawing provided the modification is contained in the
manufacturers Quality Management Plan and the “Q" certification identifier is marked on the devices. Any time-
temperature combination which is contained in table I for the appropriate class level may be used for the applicable
test condition. The test conditions (duration and temperature) selected prior to test shall be recorded and shall
govern for the entire test. Lead-, stud-, or case-mounted devices shall be mounted by the leads, stud, or case in their
normal mounting configuration, and the point of connection shall be maintained at a temperature not less than the
specified ambient temperature. Pre and post burn-in measurements shall be made as specified. Burn-in boards
shall not employ load resistors which are common to more than one device, or to more than one output pin on the
same device.
3.1 Test conditions. Basic test conditions are as shown below. Unless otherwise specified, test condition F shall
not be applied to class level S devices. Details of each of these conditions, except where noted, shall be as
described in method 1005.
a. Test condition A: Steady-state, reverse bias.
b. Test condition B: Steady-state, forward bias.
c. Test condition C: Steady-state, power and reverse bias.
d. Test condition D: Parallel excitation.
e. Test condition E: Ring oscillator.
f. Test condition F: Temperature-accelerated test.
3.1.1 Test temperature. The ambient burn-in test temperature shall be 125C minimum for conditions A through E
(except for hybrids see table I). At the supplier's option, the test temperature for conditions A through E may be
increased and the test time reduced in accordance with table I. Since case and junction temperature will, under
normal circumstances, be significantly higher than ambient temperature, the circuit employed should be so structured
that maximum rated junction temperature for test or operation shall not exceed 200°C for class level B or 175°C for
class level S (see 3.1.1.1). Devices with internal thermal shut-down circuitry shall be handled in accordance with
3.2.3 of method 1005. The specified test temperature is the minimum actual ambient temperature to which all
devices in the working area of the chamber shall be exposed. This shall be assured by making whatever adjustments
are necessary in the chamber profile, loading, location of control or monitoring instruments, and the flow of air or
other suitable gas or liquid chamber medium. Therefore, calibration shall be accomplished on the chamber in a fully
loaded (boards need not be loaded with devices), unpowered configuration, and the indicator sensor located at, or
adjusted to reflect the coldest point in the working area.
METHOD 1015.12
22 February 2017
1
MIL-STD-883-1
3.1.1.1 Test temperature for high power devices. Regardless of power level, devices shall be able to be burned in
at their maximum rated operating temperature.
a. For devices whose maximum operating temperature is stated in terms of ambient temperature, TA, table I
applies.
b. For devices whose maximum operating temperature is stated in terms of case temperature, TC and where the
ambient temperature would cause TJ to exceed +200°C (+175°C for class level S), the ambient operating
temperature may be reduced during burn-in from +125°C to a value that will demonstrate a TJ between
+175°C and +200°C and TC equal to or greater than +125°C without changing the test duration. Data
supporting this reduction shall be available to the acquiring and qualifying activities upon request.
c. For devices whose maximum operating temperature is stated in terms of case TC , or junction TJ, and whose
operation cannot exceed the maximum allowable junction temperature then the ambient life test operating
temperature may be reduced. The ambient temperature may be reduced from +125°C TA or Tc, provided TJ
is maintained within 10% of its maximum specified value. The life test duration shall be increased to match the
corresponding times in table I. The test conditions and data supporting this alternate method shall be
approved by the qualifying activity.
3.1.1.2 Test temperature for hybrid devices. The ambient or case burn-in test temperature shall be as specified in
table I, except case temperature burn-in shall be performed, as a minimum, at the maximum operating case
temperature (TC) specified for the device. Burn-in shall be 320 hours minimum for class level S hybrids (class K).
The device should be burned in at the maximum specified operating temperature, voltage, and loading conditions as
specified in the device specification or drawing. Since case and junction temperature will, under normal
circumstances, be significantly higher than ambient temperature, the circuit should be so structured that the
maximum rated junction temperature as specified in the device specification or drawing, and the cure temperature of
polymeric materials as specified in the baseline documentation shall not be exceeded. If no maximum junction
temperature is specified, a maximum of 175°C is assumed. Accelerated burn-in (condition F) shall not be permitted.
The specified test temperature shall be the minimum actual ambient or case temperature that must be maintained for
all devices in the chamber. This shall be assured by making whatever adjustments are necessary in the chamber
profile, loading, location of control or monitoring instruments and the flow of air or other suitable gas or liquid chamber
medium.
3.1.2 Temperature accelerated test details. In test condition F, microcircuits are subjected to bias(es) at a
temperature (175°C to 250°C) which considerably exceeds the maximum rated junction temperature. At these
elevated temperatures, it is generally found that microcircuits will not operate normally as specified in their applicable
acquisition documents, and it is therefore necessary that special attention be given to the choice of bias circuits and
conditions to assure that important circuit areas are adequately biased without subjecting other areas of the circuit to
damaging overstress(es). To properly select the accelerated test conditions, it is recommended that an adequate
sample of devices be exposed to the intended high temperature while measuring voltage(s) and current(s) at each
device terminal to assure that the applied electrical stresses do not induce damaging overstress. Unless otherwise
specified in the device specifications or drawings, the minimum time-temperature combination shall be as delineated
by table I. The minimum test time shall be 12 hours. The applied voltage at any or all terminals shall be equal to the
recommended operating voltage(s) at 125°C. When excessive current flow or power dissipation would result from
operation at the specified voltage(s), the applied voltage(s) at any or all terminals may be reduced to a minimum of 50
percent of the specified voltage(s) and the testing time shall be determined in accordance with the formula given in
3.5.6 of method 1005. Devices with internal thermal shut-down circuitry shall be handled in accordance with 3.5.6.1
of method 1005. Thermal runaway conditions must be avoided at all times.
METHOD 1015.12
22 February 2017
2
MIL-STD-883-1
3.2 Measurements. Pre burn-in measurements, when specified, or at the manufacturer's discretion when not
specified, shall be conducted prior to applying burn-in test conditions. Post burn-in measurements shall be
completed within 96 hours after removal of the devices from the specified burn-in test condition (i.e., either removal of
temperature or bias) and shall consist of all 25°C dc parameter measurements) (subgroup A-1 of method 5005, or
subgroups tested in lieu of A-1 as allowed in the most similar military device specification or standard microcircuit
drawing) and all parameters for which delta limits have been specified as part of interim (post-burn-in) electrical
measurements. Delta limit acceptance, when applicable, shall be based upon these measurements. If these
measurements cannot be completed within 96 hours, for either the standard or accelerated burn-in, the devices shall
be subjected to the same test condition (see 3.1) and temperature previously used for a minimum additional reburn-in
time as specified in table I before post burn-in measurements are made.
3.2.1 Cooldown after standard burn-in. All devices shall be cooled to within 10°C of their power stable condition at
room temperature prior to the removal of bias. The interruption of bias for up to 1 minute for the purpose of moving
the devices to cooldown positions separate from the chamber within which burn-in testing was performed shall not be
considered removal of bias, (bias at cooldown position shall be same as that used during burn-in). Alternatively,
except for linear, or MOS (CMOS, NMOS, PMOS, etc.) devices and hybrid devices which containing linear or MOS
devices components, or unless otherwise specified, the bias may be removed during cooling provided the case
temperature of devices under test is reduced to a maximum of 35°C within 30 minutes after the removal of the test
conditions and provided the devices under test are removed from the heated chamber within 5 minutes following
removal of bias. All 25°C dc measurements or alternate subgroups (see 3.2) shall be completed prior to any
reheating of the device(s).
3.2.2 Cooldown after accelerated burn-in. All devices subjected to the accelerated testing of condition F shall be
cooled to within 10°C of power stable at room temperature prior to the removal of bias. Interruption of bias for a
period of up to 1 minute for the purpose of moving devices to cooldown positions separate from the chamber within
which burn-in was conducted shall not be considered removal of bias, (bias at cooldown position shall be same as
that used during burn-in). All specified 25°C dc electrical measurements shall be completed prior to any reheating of
the devices.
METHOD1015.12
22 February 2017
3
MIL-STD-883-1
a. Device sockets. Initially and at least each 6 months thereafter, (once every 6 months or just prior to use if not
used during the 6 month period) each test board or tray shall be checked to verify continuity to connector points
to assure that bias supplies and signal information will be applied to each socket. Board capacitance or
resistance required to ensure stability of devices under test shall be checked during these initial and periodic
verification tests to ensure they will perform their proper function (i.e., that they are not open or shorted).
Except for this initial and periodic verification, each device or device socket does not have to be checked;
however, random sampling techniques shall be applied prior to each time a board is used and shall be
adequate to assure that there are correct and continuous electrical connections to the devices under test.
b. Connectors to test boards or trays. After the test boards are loaded with devices, inserted into the oven, and
brought up to at least 125°C (or the specified test temperature, if less than 125°C) each required test voltage
and signal condition shall be verified in at least one location on each test board or tray so as to assure electrical
continuity and the correct application of specified electrical stresses for each connection or contact pair used in
the applicable test configuration. This shall be performed by opening the oven for a maximum of 10 minutes.
voltage and signal condition verification of b above shall be repeated.
d. For class level S devices, each test board or tray and each test socket shall be verified prior to test to assure
that the specified test conditions are applied to each device. This may be accomplished by verifying the device
functional response at each device output(s). An approved alternate procedure may be used.
specified test duration. Any loss(es) or interruption(s) of bias in excess of 10 minutes total duration while the
chamber is at temperature during the final 8 hours of burn-in shall require extension of the test duration for an
uninterrupted 8 hours minimum, after the last bias interruption.
METHOD 1015.12
22 February 2017
4
MIL-STD-883-1
a. Test duration if other than as defined for the applicable class level in method 5004, or time-temperature
combination shown in table I.
b. Test condition letter.
c. Burn-in test temperature, and whether ambient, junction, or case (see 3), if other than as specified in 3.1.1.
d. Test mounting, if other than normal (see 3).
e. Pre and post burn-in measurements and drift limits, as applicable (see 3.2).
f. Authorization for use of condition F and special maximum test rating for condition F (see 3.1 and 3.1.2), when
applicable.
g. Time within which post burn-in measurements must be completed if other than specified (see 3.2).
METHOD1015.12
22 February 2017
5
MIL-STD-883-1
TABLE I. Burn-in time-temperature regression. 1/ 2/ 3/ 4/
Minimum Minimum time (hours) Test Minimum

temperature condition reburn-in
TA (°C) (see 3.1) time (hours)
Class level S Class level B Class level S hybrids
(Class K)
100 --- 352 700 Hybrids only 24
105 --- 300 600 " 24
110 --- 260 520 " 24
115 --- 220 440 " 24
120 --- 190 380 " 24
125 240 160 320 A-E 24
130 208 138 --- " 21
135 180 120 --- " 18
140 160 105 --- " 16
145 140 92 --- " 14
150 120 80 --- " 12
175 --- 48 --- F 12
200 --- 28 --- " 12
225 --- 16 --- " 12
250 --- 12 --- " 12
1/ The higher temperatures indicated may only be used with the approval of the part manufacturer.
Manufacturers shall provide the qualifying activity with data to show that the higher temperatures indicated
do not damage the part being tested by compromising the package integrity, e.g. lid seal, feedthroughs, etc.
2/ For condition F the maximum junction temperature is unlimited and care shall be taken to ensure the
device(s) does not go into thermal runaway.
3/ The only allowed conditions are as stated in the table above except for high power devices (see 3.1.1.1)..
4/ Test temperatures below 125°C may be used for hybrid circuits only.
METHOD 1015.12
22 February 2017
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MIL-STD-883-1
METHOD 1016.2
LIFE/RELIABILITY CHARACTERIZATION TESTS
1. PURPOSE. The purpose of the life characterization tests is to determine: (1) the life distributions, (2) the life
acceleration characteristics, and (3) the failure rate (λ) potential of the devices. For a discussion of failure rates and
life test considerations, see MIL-HDBK-217. Failure rates are ordinarily determined either for general qualification of
devices or the production lines from which they are obtained or for the purpose of predicting the failure rates (or Mean
Time Between Failure (MTBF)) of equipments in which the devices are to be employed.
NOTE: A detailed dissertation on the life test result analysis techniques, with application examples, is presented by
D.S. Peck in the Proceedings of the 9th Annual Reliability Physics Symposium (1971), pages 69 through 78.
Further improvements to the methods of test result analysis are possible by using computer aided techniques
such as regression analysis and iterative curve fitting.
the terminals of devices under test in the specified circuit configuration. The mounting means shall be so designed
that they will not remove internally dissipated heat from the device by conduction, other than that removed through
the device terminals and the necessary electrical contacts, which shall be maintained at or above the specified
ambient temperature. The apparatus shall provide for maintaining the specified biases at the terminal(s) of the
device under test and, when specified, monitoring of the input excitation. Power supplies and current-setting resistors
shall be capable of maintaining the specified operating conditions, as minima, throughout the testing period with
normal variations in their source voltages, ambient temperatures, etc. The test equipment shall preferably be so
arranged that only natural-convection cooling of the devices occurs. When test conditions result in significant power
dissipation, the test apparatus shall be arranged so as to result in the approximate average power dissipation for
each device whether devices are tested individually or in a group. The test circuits need not compensate for normal
variations in individual device characteristics but shall be arranged so that the existence of failed or abnormal (i.e.,
open, short, etc.) devices in a group does not negate the effect of the test for other devices in the group.
3. PROCEDURE. The microelectronic devices shall be subjected to the specified test condition (see 3.4) for the
specified duration and test temperature, and the required measurements shall be made at the specified intermediate
points and endpoints. Lead-, stud-, or case-mounted devices shall be mounted by the leads, stud, or case in their
specified temperature. The test condition, duration, sample size, and temperature selected prior to test shall be
recorded and shall govern for the entire test.
3.1 Test duration. The life test duration shall be as follows:
Initial qualification: 4,000 (+72, -240) hours

or 75 percent failures, whichever comes first
All other tests: 1,000 (+72, -24) hours
or 50 percent failures, whichever comes first
Within the time interval of 24 hours before to 72 hours after the specified duration of the test, the devices shall be
removed from the specified test conditions and allowed to reach standard test conditions prior to the removal of bias.
3.2 Measurements. Measurements shall be grouped into two categories as follows:
Type A: Initial and final measurement.
Type B: Interim measurements.
METHOD 1016.2
26 February 2010
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MIL-STD-883-1
Unless otherwise specified, all measurements shall be completed within 8 hours after removal of the device from the
specified test conditions and shall consist of the following:
Type A: All specified endpoint measurement.
Type B: Selected critical parameters (see 4).
The type A measurements shall be made at the zero hour and final measurement time. The type B interim
measurements shall be made at the 4, 8, 16, 32, 64, 128, 256, 512 hour times for the 1000 hour test and additionally,
at 1000, and 2000 hour times for the 4000 hour test.
3.2.1 Measurements following life test. When devices are measured following application of life test conditions,
they shall be cooled to room temperature prior to the removal of bias. All specified 25°C electrical measurements
shall be completed prior to any reheating of the devices.
a. Device sockets. Initially and at least each 6 months thereafter, each test board or tray shall be checked to verify
continuity to connector points to assure that bias supplies and signal information will be applied to each socket.
Except for this initial and periodic verification, each device or device socket does not have to be checked;
however, random sampling techniques shall be applied prior to each time a board is used and shall be
adequate to assure that there are correct and continuous electrical connections to the devices under test.
b. Connectors to test boards or trays. After the test boards are loaded with devices, inserted into the oven, and
brought up to at least 125°C or the specified test temperature, whichever is less, each required test voltage and
signal condition shall be verified in at least one location on each test board or tray so as to assure electrical
continuity and the correct application of specified electrical stresses for each connection or contact pair used in
the applicable test configuration. This may be performed by opening the oven for a maximum of 10 minutes.
voltage and signal condition verification of b above shall be repeated.
d. For class level S devices when loading boards or trays the continuity between each device and a bias supply
shall be verified.
required test duration, the test time shall be extended to assure actual exposure for the total minimum specified test
duration.
3.3 Test sample. The test sample shall be as specified (see 4). No fewer than 40 devices shall be specified for a
given test temperature.
3.4 Test conditions. In this condition microcircuits are subjected to bias(es) at temperatures (200C to 300C)
which considerably exceed the maximum rated operating temperature. At these elevated temperatures, it is
generally found that microcircuits will not operate normally as specified in their applicable acquisition document and it
is therefore necessary that special attention be given to the choice of bias circuits and conditions to assure that
important circuit areas are adequately biased, without damaging overstress of other areas of the circuit.
METHOD 1016.2
26 February 2010
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MIL-STD-883-1
3.4.1 Test temperatures. Unless otherwise specified, test temperatures shall be selected in the range of 200C to
300C. The specified test temperature is the minimum actual ambient temperature to which all devices in the working
area of the chamber shall be exposed. This shall be assured by making whatever adjustments are necessary in the
chamber profile, loading, location of control or monitoring instruments, and the flow of air or other chamber
atmosphere. Therefore, calibration shall be accomplished on the chamber in a fully loaded, unpowered configuration,
and the indicator sensor located at, or adjusted to reflect the coldest point in the working area. For the initial failure
rate determination test, three temperatures shall be selected. A minimum of 25°C separation shall be maintained
between the adjacent test temperatures selected. All other periodic life tests shall be conducted with two
temperatures and a minimum of 50°C separation.
3.4.2 Bias circuit selection. To properly select the accelerated test conditions, it is recommended that an adequate
sample of devices be exposed to the intended high temperature while measuring voltage(s) and current(s) at each
device terminal to assure that the applied electrical stresses do not induce damage. Therefore, prior to performing
microcircuit life tests, test circuit, thermal resistance (where significant), and step-stress evaluations should be
performed over the test ranges, usually 200°C to 300°C. Steps of 25°C for 24 hours minimum duration (all steps of
equal duration with a tolerance of no greater than ±5 percent), each followed by proper electrical measurements,
shall be used for step-stress tests.
Optimum test conditions are those that provide maximum voltage at high thermal stress to the most failure-prone
junctions or sites, but maintain the device current at a controlled low level. Excessive device current may lead to
thermal runaway (and ultimately device destruction). Current-limiting resistors shall be employed.
The applied voltage at any or all terminal(s) shall be equal to the maximum rated voltage at 125°C. If necessary, only
with the specific approval of the qualifying activity, the applied voltage at any or all terminals(s) may be reduced to not
less than 50 percent of the specified value(s) when it is demonstrated that excessive current flow or power dissipation
would result from operation at the specified voltage(s). If the voltage(s) is so reduced, the life testing time shall be
determined in accordance with the formula given in 3.5.6 of method 1005.
METHOD 1016.2
26 February 2010
3
MIL-STD-883-1
3.5 Life test ground rules. As an aid to selecting the proper test conditions for an effective microcircuit accelerated
life or screening test, the following rules have been formulated:
a. Apply maximum rated voltage (except as provided in 3.4.2) to the most failure prone microcircuit sites or
junctions identified during step-stress evaluation.
b. Apply electrical bias to the maximum number of junctions.
c. In each MOS or CMOS device, apply bias to different gate oxides so that both positive and negative voltages
are present.
d. Control device currents to avoid thermal runaway and excessive electromigration failures.
e. Employ current-limiting resistors in series with each device to ensure the application of electrical stress to all
nonfailed devices on test.
f. Select a value of each current-limiting resistor large enough to prevent massive device damage in the event
of failure, but small enough to minimize variations in applied voltage due to current fluctuations.
g. Avoid conditions that exceed design or material limitations such as solder melting points.
h. Avoid conditions that unduly accelerate nontypical field condition failure-mechanisms.
i. Employ overvoltage protection circuitry.
The determination of test conditions that conform to the established ground rules involves three basic steps: (1)
evaluation of candidate bias circuits at accelerated test temperatures, (2) device thermal characterization, and (3) the
performance of step-stress tests.
METHOD 1016.2
26 February 2010
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MIL-STD-883-1
3.6 Test results analysis. Failure analysis of the accelerated test results is necessary to separate the failures into
temperature and nontemperature dependent categories. The nontemperature dependent failures should be removed
from the test data prior to life distribution analysis. All failures shall be reported together with the analysis results and
rationale for deletion of those identified as nontemperature dependent.
3.6.1 Life distribution analysis. The effectiveness of the test result analysis can be enhanced by diligent failure
analysis of each test failure. Failures should be grouped by similarity of failure mechanisms, that is, surface related,
metal migration, intermetallic formation, etc. The time-to-failure history of each failure in a group should be recorded.
This includes the individual failure times and the associated calculated cumulative percent failures. To facilitate
estimating the distribution parameters from small-sample life tests, the data is plotted as a cumulative distribution.
Since semiconductor life distributions have been shown to follow a lognormal distribution, graph paper similar to
figure 1016-1 is required for data analysis. The lognormal distribution will appear as a straight line on this paper. The
expected bimodal distribution of "freak" and "main" populations in a combined form normally appears as an s-shaped
plot. The distribution parameters necessary for data analysis, median life and sigma (σ) can be calculated as:
time of 50% failure

  ln
time of 16% failure
Separate analysis of the individual "freak" and "main" populations should be performed and "goodness of fit" tests
applied to test the apparent distribution(s).
3.6.2 Life acceleration analysis. Life/reliability characterization requires the establishing of failure distributions for
several temperature stress levels at the same rated voltage condition. These failure distributions must represent a
common failure mechanism. Using a specially prepared graph paper for Arrhenius Reaction Rate Analysis as shown
in figure 1016-2, the median life times for the "freak" and "main" populations can be plotted to determine equivalent
life-times at the desired use temperatures.
3.6.3 Failure rate calculations. Semiconductor failures are lognormally distributed. Therefore, the failure rate will
vary with time. Semiconductor failure rates at any given time can be calculated using figure 1016-3 which is a
normalized presentation of the mathematical calculations for the instantaneous failure rate from a lognormal
distribution.
METHOD 1016.2
26 February 2010
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MIL-STD-883-1
4. SUMMARY. The following details shall be as specified in the applicable acquisition document:
a. Test temperature(s) and whether ambient or case.
b. Test mounting if other than normal (see 3).
c. Endpoint measurements (see 3.2).
d. Intermediate measurements (see 3.2).
e. Criteria for failure for endpoint and intermediate measurements (see 3.2), if other than device specification
limits.
f. Test sample (see 3.3).
g. Requirements for inputs, outputs, biases, test circuit, and power dissipation, as applicable (see 3.4).
h. Requirements for data analysis, including:
(1) Failure analysis results.
(2) Data calculations:
(a) Log normal by temperature.
(b) Reaction rate relationships
(c) Failure rate versus time.
METHOD 1016.2
26 February 2010
6
MIL-STD-883-1
FIGURE 1016-1. Cumulative failure distribution plot.
METHOD 1016.2
26 February 2010
7
MIL-STD-883-1
FIGURE 1016-2. Arrhenius plot - high temperature operating test - accelerated life.
METHOD 1016.2
26 February 2010
8
MIL-STD-883-1
TIME = MEDIAN LIFE, (T1)
FIGURE 1016-3. Lognormal failure rates.
METHOD 1016.2
26 February 2010
9
MIL-STD-883-1
METHOD 1017.3
NEUTRON IRRADIATION
1. PURPOSE. The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to
non-ionizing energy loss (NIEL) degradation. The tests described herein are applicable to integrated circuits,
transistors, and diodes. This is a destructive test. Objectives of the test are: (1) to detect and measure the
degradation of critical semiconductor device parameters as a function of neutron fluence, and (2) to determine if
specified semiconductor device parameters are within specified limits after exposure to a specified level of neutron
fluence (see section 4).
2. APPARATUS.
2.1 Test instruments. Test instrumentation to be used in the radiation test shall be standard laboratory electronic
test instruments such as power supplies, digital voltmeters, and picoammeters, etc., capable of measuring the
electrical parameters required. Parameter test methods and calibration shall be in accordance with MIL-STD-883 or
MIL-STD-750, whichever is applicable.
2.2 Radiation source. The radiation source used in the test shall be a well characterized neutron source that
produces either a broad neutron energy spectrum (such as a TRIGA Reactor or a Fast Burst Reactor) or a
monoenergetic neutron spectrum such as available from DT or DD accelerators) provided that the output can be
converted to a 1 MeV equivalent spectrum using Department of Defense adopted ASTM standards. The uncertainty
in the neutron spectrum shall be characterized in the form of an energy-dependent covariance matrix. The neutron
source shall be characterized for the associated ionizing radiation production per unit of neutron fluence prior to use.
Facilities that generate more than 500 rad(Si) of Total Ionizing Dose (TID) per 1 X 1012 n/cm3 (1 MeV equivalent)
shall not be used. The source shall be one that is acceptable to the acquiring activity.
a. Operation may be in either pulse or steady-state mode as appropriate.
2.3 Dosimetry equipment (as required).
a. Fast-neutron threshold activation foils such as 32S, 54Fe, and 58Ni.
b. CaF2 thermoluminescence dosimeters (TLDs).
c. Appropriate activation foil counting and TLD readout equipment.
2.4 Dosimetry measurements.
2.4.1 Neutron fluences. The neutron fluence used for device irradiation shall be obtained by measuring
the amount of radioactivity induced in a fast-neutron threshold activation foil such as 32S, 54Fe, or 58Ni, irradiated
simultaneously with the device.
A standard method for converting the measured radioactivity in the specific activation foil employed into a neutron
fluence is given in the following Department of Defense adopted ASTM standards:
ASTM E 263 Standard Test Method for Measuring Fast-Neutron Reaction Rates by
Radioactivation of Iron.
Radioactivation of Nickel.
Radioactivation of Sulfur.
METHOD 1017.3
7 June 2013
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MIL-STD-883-1
The conversion of the foil radioactivity into a neutron fluence requires a knowledge of the neutron spectrum incident
on the foil. If the spectrum is not known, it shall be determined by use of the following DoD adopted ASTM
standards, or their equivalent:
ASTM E 720 Standard Guide for Selection of a Set of Neutron-Activation Foils for Determining
Neutron Spectra used in Radiation-Hardness Testing of Electronics.
ASTM E 721 Standard Method for Determining Neutron Energy Spectra with
Neutron-Activation Foils for Radiation-Hardness Testing of Electronics.
ASTM E 722 Standard Practice for Characterizing Neutron Energy Fluence Spectra in Terms
of an Equivalent Monoenergetic Neutron Fluence for Radiation-Hardness Testing
of Electronics.
ASTM E 1018 Standard Guide for Application of ASTM Evaluated Cross Section Data File.
Once the neutron energy spectrum has been determined and the equivalent monoenergetic fluence calculated,
then an appropriate monitor foil (such as 32S, 54Fe, or 58Ni) should be used in subsequent irradiations to determine
the neutron fluence as discussed in ASTM E 722. Thus, the neutron fluence is described in terms of the equivalent
monoenergetic neutron fluence per unit monitor response. Use of a monitor foil to predict the equivalent
monoenergetic neutron fluence is valid only if the energy spectrum remains constant.
2.4.2 Dose measurements. If a measure of the radiation absorbed dose is required during the test, then such
measurements shall be made with CaF2 thermoluminescence dosimeters (TLDs), or their equivalent. These TLDs
shall be used in accordance with the recommendations of the following DoD adopted ASTM standard:
ASTM E 668 Standard Practice for the Application of Thermoluminescence-Dosimetry (TLD)

Systems for Determining Absorbed Dose in Radiation-Hardness Testing of
Electronic Devices.
ASTM E 2450 Standard Practice for Application of CaF2(Mn) Thermoluminescence Dosimeters
in Mixed Neutron-Photon Environments.
3. PROCEDURE.
3.1 Safety requirements. Neutron irradiated parts may be radioactive. Handling and storage of test specimens or
equipment subjected to radiation environments shall be governed by the procedures established by the local
Radiation Safety Officer or Health Physicist.
NOTE: The receipt, acquisition, possession, use, and transfer of this material after irradiation is subject to the
regulations of the U.S. Nuclear Regulatory Commission, Radioisotope License Branch, Washington, DC
20555. A by-product license is required before an irradiation facility will expose any test devices. (U.S.
Code, see 10 CFR 30-33.)
3.2 Test samples. A test sample shall be randomly selected and consist of a minimum of 10 parts, unless
otherwise specified. All sample parts shall have met all the requirements of the governing specification for that part.
Each part shall be serialized to enable pre and post test identification and comparison.
METHOD 1017.3
7 June 2013
2
MIL-STD-883-1
3.3 Pre-exposure.
3.3.1 Electrical tests. Pre-exposure electrical tests shall be performed on each part as required. Where delta
parameter limits are specified, the pre-exposure data shall be recorded.
3.3.2 Exposure set-up. Each device shall be mounted unbiased and have its terminal leads either all shorted or all
open. For MOS devices or any microcircuit containing an MOS element, all leads shall be shorted. An appropriate
mounting fixture shall be used. The mounting fixture shall accommodate the units-under-test as well as any required
dosimeters. The configuration of the mounting fixture will depend on the type of facility used and should be
discussed with facility personnel. Test devices shall be mounted such that the total variation of fluence over the
entire sample does not exceed 20 percent.
3.4 Exposure. The test devices and any required dosimeters shall be exposed to the neutron fluence as specified.
If incremental exposures are required, the post-radiation electrical tests shall be performed (see 3.5.1) after each
exposure. If dosimeters are required, than a new set of dosimeters shall be used for each exposure level. Since the
effects of neutrons are cumulative, each additional exposure will have to be determined to give the specified total
accumulated fluence. All exposures shall be made at 24 °C ± 6 °C and shall be correlated to a 1 MeV equivalent
fluence. To avoid confounding NIEL effects with total ionizing dose damage effects, units-under-test shall not be
exposed to a neutron fluence that causes the unit-under-test to receive a total ionizing dose in excess of 10% of its
rated value. If necessary, the use of shielding to reduce the accompanying gamma TID exposure is acceptable.
3.5 Post-exposure.
3.5.1 Electrical tests. Test items shall be removed only after clearance has been obtained from the Health
Physicist at the test facility. The temperature of the sample devices must be maintained at 20°C±10°C from the time
of the exposure until the post-electrical tests are made. The post-exposure electrical tests as specified shall be made
within 24 hours after the completion of the exposure. If the residual radioactivity level is too high for safe handling,
this level to be determined by the local Radiation Safety Officer, the elapsed time before post- test electrical
measurements are made may be extended to 1 week. Alternatively, provisions may be made for remote testing. All
required data must be recorded for each device after each exposure.
3.5.2 Anomaly investigation. Parts which exhibit previously defined anomalous behavior (e.g., nonlinear
degradation of 0.125) shall be subjected to failure analysis in accordance with method 5003, MIL-STD-883.
3.6 Reporting. As a minimum, the report shall include the part type number, serial number, manufacturer,
controlling specification, the date code and other identifying numbers given by the manufacturer. Each data sheet
shall include radiation test date, electrical test conditions, radiation exposure levels, ambient conditions as well as the
test data. Where other than specified electrical test circuits are employed, the parameter measurement circuits shall
accompany the data. Any anomalous incidents during the test shall be fully explained in footnotes to the data.
METHOD 1017.3
7 June 2013
3
MIL-STD-883-1
4. SUMMARY. The following details shall be specified in the request for test or, when applicable, the acquisition
document:
a. Part types.
b. Quantities of each part type to be tested, if other than specified in 3.2.
c. Electrical parameters to be measured in pre and post exposure tests.
d. Criteria for pass, fail, record actions on tested parts.
e. Criteria for anomalous behavior designation.
f. Radiation exposure levels.
g. Test instrument requirements.
h. Radiation dosimetry requirements, if other than 2.3.
i. Ambient temperature, if other than specified herein.
j. Requirements for data reporting and submission, where applicable (see 3.6).
METHOD 1017.3
7 June 2013
4
MIL-STD-883-1
METHOD 1018.10
INTERNAL GAS ANALYSIS
1. PURPOSE. The purpose of this test method is to quantitatively measure the gas atmosphere inside a metal or
ceramic hermetically-sealed device using mass spectrometry methods. Gases inside hermetically sealed devices can
impact device long term reliability. Of particular interest is the measurement of the primary sealing gases (or lack
thereof), the moisture content, the presence of bombing gases that are indicative of non-hermeticity (e.g. helium),
oxygen to argon ratio indicative of room air ~ 20 to 1 (± 10 percent), dissimilar concentration of internally sealed gases
(e.g. nitrogen, helium) than originally sealed in the device package, the presence of leak test fluid (i.e. fluorocarbon,
helium, air), and all other gases to determine if the device meets the specified moisture, hermeticity and other criteria.
Also of interest is the measurement of all the other gases since they reflect upon the quality of the sealing process and
provide information about the long term chemical stability of the atmosphere inside the device. This test is destructive.
The presence of leak test fluorocarbon vapor in the IGA is an indication of failure to meet leak test requirements of Test
Method 1014 of this test method standard.
1.1 Definitions. The definitions for all terms used herein shall be as specified herein.
a) Accuracy: A combination of the bias and precision of an analytical procedure, which reflects the
closeness of a measured value to the true value. For the purposes of laboratory suitability, accuracy
means the closeness of a measured value to its reference standard.
b) Adjusted volume: The volume equivalent to a device having one atmosphere of gas. (Physical internal
volume times the number of atmospheres in the device divided by one atmosphere.)
c) Air burst: A sample of room air used to determine the sensitivity (calibration factor) for oxygen, nitrogen
and argon using room air as a calibration source. An air burst reading shall be taken weekly (every week
testing is performed). The results of all air burst measurements shall be recorded, retained and made
available to the qualifying activity upon request.
d) Atomic mass unit (AMU): Has the same meaning as "mass-to-change-ratio". The term "mass" is
sometimes used to represent AMU or mass-to-charge ratio. (Example: Mass range has the same
meaning as "AMU range", which has the same meaning as "mass-to-charge-ratio range".)
e) Continuous scanning: Continuous scanning mode refers to acquiring spectra data in fractions of an AMU
so as to be able to display a peak shape. This procedure stores substantial amounts of data and may be
limited in speed due to the requirement to save much more data. It also requires a method to
mathematically process the peak shape data to establish the peak height or peak area and determine the
fractional AMU value of the peak centroid.
f) Device volume: All references to the device internal volume specified in this document shall be
interpreted to mean the adjusted volume of the device.
g) High mass resolution: Refers to mass spectrometers that can resolve peaks that are separated by tenths
and even hundredths of 1 AMU.
h) IGA Submission Application: All information supplied by the client to the Internal Gas Analysis (IGA)
laboratory in the form of PO instructions, IGA laboratory submission form, or other document(s)
specifying some or all of the following: military standard test method, package internal volume, lid
thickness, puncture location, internal clearance measurement, number of samples to be tested, package
internal pressure, failure criteria, and other related test instructions.
i) Ionization source: The hardware and the process to ionize the gases and focusing the ions into the mass
spectrometer. Maintaining the ionization source in a clean condition is critical to good quantitative results.
j) Mass peak (or Peak): The rise and fall of the ion signal intensity over a finite mass range. The peak must
be processed to determine the amplitude of the peak and the AMU value of the peak centroid in order to
perform qualitative or quantitative analysis.
METHOD 1018.10
3 May 2018
1
MIL-STD-883-1
k) Mass range: The minimum and maximum AMU range over which the mass spectrometer is capable of
detecting ions and resolving peaks. Mass spectrometers types may have widely different detection
sensitivity and resolution over the mass range.
l) Mass resolution: Mass resolution refers to the ability to separate a mass peak from an adjacent mass
peak.
m) Mass spectrometer: A laboratory instrument that is capable of measuring the constituents of gas
mixtures through a process of ionizing the gas sample and then performing a spectrographic analysis
that detects the ion count versus the mass-to-charge ratio of ionized gases. The mass spectrometer is
technically an individual component of the mass spectrometer system which includes all of the
supplemental components and capabilities defined in apparatus.
n) Mass spectrometer tuning: The procedure for adjusting the operating voltages and sample injection gas
pressure conditions within the ionization source and detector of the mass spectrometer so as to optimize
the overall peak shape response of the mass spectrometer per the selected scanning conditions and
data acquisition parameters so as to produce consistent undistorted spectra. Calibration of the mass
spectrometer is only valid for the tuning conditions for which the system was calibrated. Deterioration of
the tuning performance invalidates the calibration.
o) Mass spectrometer types: There are several types of mass spectrometers such as Quardupole, Magnetic
Sector and Time-Of-Flight. These names only describe the method that is used to perform mass-to-
charge separation. These names do not describe the method of ionizing the sample, nor do they
describe the method of detecting the ion signal.
p) Mass-to-charge ratio: The atomic mass of a charged molecule (or a molecule fragment) divided by the
charge (in electron volts.)
q) Matrix: The general gaseous makeup of the primary gases of a particular sample.
r) Physical internal volume: The internal free space in the device (the internal volume of the package less
the volume of the die and die attach material).
s) Qualitative analysis: The ability to identify what gases are present and to some degree, an approximate
amount.
METHOD 1018.10
3 May 2018
2
MIL-STD-883-1
t) Quantitative analysis: The ability to identify the gas species that are present and the ability determine the
concentration of the species to some level of assurance. Mass spectrometer test results may be
quantitative only when:
i. The mass spectrometer has been precisely tuned to reproducibly create and detect ions at the level
of specified sensitivity for the analysis within the mass range and mass resolution of interest for the
analysis,
ii. The AMU scale has been calibrated at the mass resolution, scanning mode and scanning speed used
for the analysis,
iii. The ion count detection response factors to the different gases has been calibrated,
iv. A methodology has been created to efficiently inject calibration and test sample gases into the
ionization region of the mass spectrometer without undo loss or alteration of the sample gas,
v. A methodology of collecting, storing, and retrieving data from the mass spectrometer has been
developed, and
vi. A method of quantization has been developed that accounts for interference from gases with
overlapping spectra.
u) Scanning: Refers to acquisition of a mass spectra over an AMU range.
v) Scanning mode: Refers to different ways to acquire mass spectra data (see continuous scanning and
step scanning).
w) Scanning speed: Refers to the time/AMU (sec/AMU or ms/AMU) that the spectrometer scans the
spectra. Scan speed is often programmable but is often limited by electronic signal processing limitations
and data storage rate limits. Excessive speed may result is artificial distortion of small peaks that reside
next to large peaks.
x) Signal to noise ratio (S/N): A dimensionless measure of the relative strength of an analytical signal (S) to
the average strength of the background instrumental noise (N) and is closely related to the detection
level. The ratio is useful for determining the effect of the noise on the relative error of a measurement.
For this calculation, the signal and noise used shall be for the same AMU. For the purposes of this test
method, signal to noise ratio shall be calculated as (the difference between the signal amplitude less the
average of the background signal) divided by (4 times the standard deviation of the background signal).
This assumes a moisture sample in nitrogen.
y) Step scanning: Step scanning refers to acquiring the ion signal value only at pre-defined AMU centroid
locations. The method requires precise and stable calibration of the AMU scale and assumes that the
defined AMU location is stable so as not to unintentionally measure at a shoulder of the peak rather than
the maximum of a peak. It also requires some assumptions when distinguishing trace level signals from
background signal.
z) Unit mass resolution: Refers to mass spectrometers that can only resolve one whole mass from an
adjacent whole mass.
aa) Volume range suitability: The adjusted volume ranges that the qualifying activity has approved for a
laboratory to test.
METHOD 1018.10
3 May 2018
3
MIL-STD-883-1
2. Apparatus. The mass spectrometer used to perform the internal gas analysis test shall meet the following
requirements:
a. Mass range. The mass spectrometer shall be capable of a minimum mass range of 1 to 140 AMU.
b. Detection limit:
(1) The mass spectrometer shall be capable of reproducibly detecting the specified moisture content for a
given volume package with signal to noise ratio of 20 to 1 or greater. (i.e., for a specified limit of 5,000
parts per million volume (ppmv)).
(2) For all gases that are specified in the failure criteria, other than moisture, the mass spectrometer
system shall be capable of detecting that gas at the specified limit with a signal-to-noise ratio greater
than 20 to 1.
(3) The mass spectrometer shall also be capable of detecting a 250 ppmv minimum detection limit to
moisture.
(4) The mass spectrometer shall be capable of a 50 ppmv minimum detection limit to nitrogen, oxygen,
argon, carbon dioxide, hydrogen, helium and fluorocarbons. Fluorocarbons shall be identified by the
presences of masses 69 and 119.
c. A vacuum opening chamber which can contain the device and a vacuum transfer passage connecting the
device to the mass spectrometer. A vacuum transfer passage shall efficiently (without significant loss of
moisture from adsorption) transfer the gas from the device to the mass spectrometer ion source for
measurement.
d. For initial certification of systems or extension of suitability, device temperature on systems using an external
fixture shall be characterized by placing a thermocouple into the cavity of a blank device of similar mass,
internal volume, construction, and size. This shall be a means for proving the device temperature that has
been maintained at 100°C ±5°C for the minimum 10 minutes. This also applies to devices prebaked in an
external oven but tested with the external fixture to adjust for any temperature drop during the transfer.
These records shall be maintained by the test laboratory.
e. A piercing arrangement functioning within the opening chamber or transfer passage, which can pierce the
specimen housing (without breaking the mass spectrometer chamber vacuum and without disturbing the
package sealing medium), thus allowing the specimen's internal gases to escape into the chamber and mass
spectrometer.
NOTE: A sharp-pointed piercing tool, actuated from outside the chamber wall via a bellows to permit
movement shall be used to pierce both metal and ceramic packages. For ceramic packages, or devices
with thick metal lids, the package lid or cover should be locally thinned by abrasion to facilitate localized
piercing.
f. A pressure sensing device to measure the pressure rise in the transfer passage during the test. This
pressure sensor is used to read a relative pressure change when the device is punctured. This relative
pressure change indicates the relative quantity of gas in the device when comparing the test results of one
device to another device. The pressure reading is not intended to be absolute. Although the pressure gauge
reading is reported, the pressure gauge is for indication only.
METHOD 1018.10
3 May 2018
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MIL-STD-883-1
g. The IGA laboratory shall provide package simulators that have the capability of introducing calibration gas
mixtures into the mass spectrometer in a manner that reproduces the injection pressure dynamics, timing and
location as that used to test devices. Other injection locations are allowable, if it can be demonstrated that
they are equivalent to the actual device test location. The simulators shall be capable of generating a known
volume of gas (±10 percent) on a repetitive basis by means of a continuous gas flow from a calibrated gas
source. A simulator shall be provided having an internal volume of the lowest volume for which the lab is
requesting laboratory suitability. Additional simulators shall be provided to calibrate each decade of larger
volume for which the lab is requesting laboratory suitability.
h. The calibration of moisture content shall be established by the standard generation techniques (i.e., two-
pressure, divided flow, or cryogenic method). The dew point hygrometer shall be recalibrated a minimum of
once per year using equipment traceable to NIST or by a suitable commercial calibration services laboratory
using equipment traceable to NIST standards. The dew point hygrometer shall be capable of measuring the
dew point temperature to an accuracy of ±0.2°C. The system shall have a calibrated pressure sensor to
measure the pressure in line with the temperature dew point sensor to an accuracy of ±0.1 inches of Hg (2.54
mm of Hg) for the range of pressure being used. In addition, the test laboratory shall have a procedure to
calculate the concentration of moisture, in units of ppmv, from the dew point temperature measurement and
the pressure measurement.
2.1 System calibration requirements. The system calibration requirements for the internal gas analysis test shall
be as specified herein.
2.1.1 System suitability qualification test for measuring moisture. For each package simulator, the laboratory shall
quarterly perform a system qualification test for moisture by performing the following sequence using moisture in a
nitrogen matrix:
a. Perform three injections using a known moisture value that is in the range of 5,000 ±500 ppmv.
b. Calculate the best fit calibration factor for moisture and recalculate the results of the three injections.
c. Perform the following sequence of injections to create a moisture calibration curve:
(1) 2 consecutive injections at a moisture concentration >7,000 ppmv, then
(2) 2 consecutive injections at a moisture concentration <2,500 ppmv, then
(3) 2 consecutive injections at a moisture concentration >7,000 ppmv, then
(4) 2 consecutive injections at a moisture concentration <2,500 ppmv, then
(5) 2 consecutive injections at a moisture concentration in the range of 5,000 ±500 ppmv.
d. Record the actual moisture standard readings and the test result for each test. Using the original three
moisture tests at 5,000 ppmv and the test results from the sequence above:
(1) Calculate the intercept, slope and R2 factors using the linear regression formula,
(2) Calculate the standard deviation of the difference between the standard moisture value and the
measured moisture value for each of the 13 tests,and
(3) Calculate the signal-to-noise ratio for moisture at 5,000 ppmv using the data from the 5,000 ppmv tests.
METHOD 1018.10
3 May 2018
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MIL-STD-883-1
e. The system suitability requirements for moisture for all volumes:
(1) The calculated intercept of the moisture calibration curve shall be less than 500 ppmv and greater than
–500 ppmv,
(2) The calculated slope of the moisture calibration curve shall be less than 1.2 and greater than 0.8,
(3) The standard deviation of the standard moisture values minus the measured moisture values, using all
13 test samples, shall be less than 300 ppmv and there shall be no more than 2 samples having a
difference greater than 500 ppmv,
(4) R2 shall be greater than 0.97, and
(5) The signal-to-noise for moisture ratio shall be greater than 20 for each of the five 5,000 ppmv tests.
2.1.2 Quarterly calibration for other gases. Quarterly calibration shall be required for all gases found in
concentrations greater than .01 percent by volume. As a minimum, this shall include all gases listed in 3.b. The
applicable gases shall be calibrated at approximately 1 percent concentrations with the exception of fluorocarbons,
which may use a concentration of approximately 200 ppmv of a fluorocarbon compound by identifying masses 69 and
119; NH3, which may use a concentration of approximately 200 ppmv; hydrogen, which may use a concentration of
approximately 200 ppmv; nitrogen, which may use a concentration of approximately 80 percent; helium, which may
use a concentration of approximately 10 percent; and oxygen, which may use a concentration of approximately 20
percent. A minimum detection limit evaluation shall be performed for other gases.
NOTE: It is recommended that the percentage of water vapor contained in a gas flowing through the gas humidifier
be compared to the dew point sensor reading for accuracy of the sensor. The following equation may be
used to calculate the percent of water vapor contained in a gas flowing through the gas humidifier.
100 Pv mb 
% H 2 O  68 . 95 mb/psi Pg  1 . 33 mb/mm Pa
Where:
Pv = vapor pressure of water in the GPH based on water temperature in degrees Celsius.
Pg = gauge pressure in psi.
Pa = atmospheric pressure in mm Hg.
METHOD 1018.10
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MIL-STD-883-1
2.1.3 Daily calibration check. The system calibration shall be checked on the day of test prior to any testing. This
shall include checking the calibration by in-letting a sample with a moisture level in the 4,500 to 5,500 ppmv range at
the required volumes and comparing the result with the dew point hygrometer. The resulting moisture reading shall
be within 250 ppmv of the moisture level in the calibration sample.
NOTE: Equipment error needs to be determined and subtracted from the allowed maximum deviation of 250 ppmv.
The calibration check shall be performed using the same conditions used for testing devices (e.g. background
pressure, background environment, time between sample inlets, package simulator volume, etc.). Calibration
records shall be kept on a daily basis.
a. Performed on the day of test prior to any testing may be substituted for this calibration check.
b. Precision tuning shall be performed following significant maintenance or repair of the ion source.
c. A procedure for monitoring the tuning performance of the mass spectrometer shall be established, performed
and documented on a daily basis.
d. A record of all changes made to the sensitivity factors shall be maintained in addition to a reason for the
change.
e. All raw data, including test parameters used for the spectrometer, background spectra, test spectra,
pressure readings, and calibration factors, shall be recorded for each test sample. The IGA lab shall retain
the ability to review and recalculate the data in accordance with the archiving retention period requirements.
f. Mass resolution. The mass spectrometer shall be capable of resolving mass peaks to 1 AMU or less over the
mass range.
METHOD 1018.10
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MIL-STD-883-1
3. PROCEDURE. All devices shall be prebaked for 16 to 24 hours at 100°C ±5°C prior to test. Ovens shall have a
means to indicate if a power interruption occurs during the prebaking period and for how long the temperature drops
below 100°C 5C. Devices whose temperature drops below 100°C 5C for more than 1 hour shall undergo another
prebake to begin a minimum of 12 hours later.
A maximum 5-minute transfer time from prebake to hot insertion into apparatus shall be allowed. If 5 minutes is
exceeded, device shall be returned to the prebake oven and prebake continued until device reaches 100°C 5C.
The system shall be maintained at a stable temperature equal to or above the device temperature. The fixturing in
the vacuum opening chamber shall position the specimen as required by the piercing arrangement of 2.e, and
maintain the device at 100°C ±5°C for a minimum of 10 minutes prior to piercing.
After device insertion, the device and chamber shall be pumped down and baked out at a temperature of 100°C ±5°C
until the background pressure level will not prevent achieving the specified measurement accuracy and sensitivity.
The background vacuum spectra shall be acquired and shall later be subtracted from the sample spectra. After pump
down, the device case or lid shall be punctured and the following properties of the released gases shall be measured,
using the mass spectrometer:
a. The water-vapor content of the released gases, as a percent by unit volume or ppmv of the total gas content.
b. The proportions (by volume) of the other following gases: N2, He, Mass 69 (fluorocarbons), O2, Ar, H2, CO2,
CH4, NH3, and other solvents, if available. Calculations shall be made and reported on all gases present.
Data reduction shall be performed in a manner which will preclude the cracking pattern interference from
other gas specie(s) in the calculations of moisture content. Data shall be corrected for any system
dependent matrix effects such as the presence of hydrogen in the internal ambient.
c. The increase in chamber pressure as the gases are released by piercing the device package. A pressure
change of ±25 percent from expected for that package volume and pressurization may indicate that (1) the
puncture was not fully accomplished, (2) the device package was not sealed hermetically, or (3) does not
contain the normal internal pressure.
d. The test laboratory should provide comments describing the spectra of unknowns or gases that are present
but not in sufficient concentration to be identified or quantified with reasonable certainty.
e. If the test laboratory has reason to believe that the test results may be invalid due to reasons such as
improper puncture of the device or equipment malfunction, the results shall be reported as “no test” with
additional comments provided. The device may be replaced with another.
NOTE: The device shall be hermetic in accordance with test method 1014 of this standard, and free from any
surface contaminants which may interfere with accurate water vapor content measurement. The
internal gas analysis laboratory (IGA) is not required to test for hermeticity in accordance with test
method 1014 of this standard. It is recommended that samples submitted for testing shall include
information about the manufacturing process, including sealing pressure, sealing gas, free internal
cavity volume, lid thickness at puncture site, lid material, and the location of the puncture site.
METHOD 1018.10
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MIL-STD-883-1
3.1 Failure criteria.
a. The IGA laboratory shall classify devices as passed or failed in accordance with the failure criteria specified
in the IGA submission application, if any. In addition, any device exhibiting gas content or a pressure
reading indicative of a leak (see paragraph 1 herein) shall be identified as a leaker and shall fail this test
even when the failure criteria limits for an individual device: water vapor content (5,000 ppm or greater),
oxygen content (10,000 ppm or greater unless oxygen is an intended constituent gas in the sealing
atmosphere), and fluorocarbon (leak test fluid) content (50ppm or greater) have not been surpassed.
b. Sample size for IGA testing shall never allow any c = 1 criteria. Any failure requires investigative and
corrective action by the manufacturer of all affected lots to eliminate the root cause of the IGA failure.
Manufacturers should refer to their baseline IGA data for reference. Resubmittal procedures shall be per the
applicable Military Specification requirements.
c. Any device exhibiting a pressure difference greater than 15 percent shall be considered a failure.
METHOD 1018.10
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MIL-STD-883-1
4. IMPLEMENTATION. Suitability for performing method 1018 analysis is granted by the qualifying activity for
specific limits and volumes. Method 1018 calibration procedures and the suitability survey are designed to guarantee
±20 percent lab-to-lab correlation in making a determination whether the sample passes or fails the specified limit.
Water vapor contents reported either above or below the range of suitability are not certified as correlatable values.
This out of specification data has meaning only in a relative sense and only when one laboratory's results are being
compared. The specification limit of 5,000 ppmv shall apply to all package volumes (unless otherwise specified), with
the following correction factors permitted, to be used by the manufacturer provided they are documented and shown
to be applicable:
a. For package volumes less than .01 cc internal free volume which are sealed while heated in a furnace:
T r  273
CT 
T s  273
Where:
CT = correction factor (temperature)
Tr = room temperature (C)
Ts = sealing temperature (C).
b. For package volumes of any size sealed under vacuum conditions:
Ps
CP 
Pa
CP = correction factor (pressure)

Ps = sealing pressure
Pa = atmospheric pressure
The correction factor, if used, shall be applied as follows:
Water vapor (corrected) = water vapor (measured) x CX; where CX is the applicable correction factor.
The range of suitability for each laboratory will be extended by the qualifying activity when the analytical laboratories
demonstrate an expanded capability. Information on current analytical laboratory suitability status can be obtained
by contacting DLA Land and Maritime, ATTN: DLA Land and Maritime-VQH, P.O. Box 3990, Columbus, OH
43218-3990 or e-mail: vqh.chief@dla.mil.
5. SUMMARY. The following details shall be specified in the applicable Military specification or acquisition
document:
a. The maximum allowable water vapor content if other than 5,000 ppmv.
b. The maximum allowable oxygen content, if other than 10,000 ppmv.
c. The maximum allowable fluorocarbon content, if other than 50 ppmv.
d. All other gas contents that represent a specific device failure.
METHOD 1018.10
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MIL-STD-883-1
METHOD 1019.9
IONIZING RADIATION (TOTAL DOSE) TEST PROCEDURE
1. PURPOSE. This test procedure defines the requirements for testing packaged semiconductor integrated
circuits for ionizing radiation (total dose) effects from a cobalt-60 (60Co) gamma ray source. There are four (4) tests
presented in this procedure: A standard room temperature irradiation test, an irradiation at elevated
temperature/cryogenic temperature test, an accelerated annealing test, and an Enhanced Low Dose Rate Sensitivity
(ELDRS) test. The accelerated annealing test estimates how dose rate ionizing radiation effects on devices is
important for low dose-rate or certain other applications in which devices may exhibit significant time-dependent
effects. The ELDRS test determines if devices with bipolar linear components exhibit sensitivity to enhanced
radiation induced damage at low dose rates. This procedure addresses only steady state irradiations, and is not
applicable to pulse type irradiations. These tests may produce severe degradation of the electrical properties of
irradiated devices and thus should be considered destructive tests.
1.1 Definitions. Definitions of terms used in this procedure are given below:
a. Ionizing radiation effects. The changes in the electrical parameters of a device or integrated circuit resulting
from radiation-induced charge. These are also referred to as total dose effects.
b. In-flux test. Electrical measurements made on devices during irradiation exposure.
c. Internal dose-pattern. This is in reference to the state vector which specifies the logic condition of all
elements within a logic circuit during radiation exposure.
d. Not in-flux test. Electrical measurements made on devices at any time other than during irradiation.
e. Remote tests. Electrical measurements made on devices which are physically removed from the radiation
location.
f. Time dependent effects. Significant degradation in electrical parameters caused by the growth or annealing
or both of radiation-induced trapped charge after irradiation. Similar effects also take place during
irradiation.
g. Accelerated annealing test. A procedure utilizing elevated temperature to accelerate time-dependent

effects.
h. Enhanced Low Dose Rate Sensitivity (ELDRS). Used to refer to a part that shows enhanced radiation
induced damage at dose rates below 50 rad(Si)/s.
i. Overtest. A factor that is applied to the specification dose to determine the test dose level that the samples
must pass to be acceptable at the specification level. An ovetest factor of 1.5 means that the parts must be
tested at 1.5 times the specification dose.
j Parameter Delta Design Margin (PDDM). A design margin that is applied to the radiation induced change in
an electrical parameter. For a PDDM of 2 the change in a parameter at a specified dose from the pre-
irradiation value is multiplied by two and added to the pre-irradiation value to see if the sample exceeds the
post-irradiation parameter limit. For example, if the pre-irradiation value of Ib is 30 nA and the post-irradiation
value at 20 krad(Si) is 70 nA (change in Ib is 40 nA), then for a PDDM of 2 the post-irradiation value would be
110 nA (30 nA + 2 X 40 nA). If the allowable post-irradiation limit is 100 nA the part would fail.
METHOD 1019.9
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MIL-STD-883-1
2. APPARATUS. The apparatus shall consist of the radiation source, electrical test instrumentation, test circuit
board(s), cabling, interconnect board or switching system, an appropriate dosimetry measurement system, and an
environmental chamber (if required for time-dependent effects measurements or elevated/cryogenic temperature
irradiation). Adequate precautions shall be observed to obtain an electrical measurement system with sufficient
insulation, ample shielding, satisfactory grounding, and suitable low noise characteristics.
2.1 Radiation source. The radiation source used in the test shall be the uniform field of a 60Co gamma ray source.
Uniformity of the radiation field in the volume where devices are irradiated shall be within ±10 percent as measured
by the dosimetry system, unless otherwise specified. The intensity of the gamma ray field of the 60Co source shall be
known with an uncertainty of no more than ±5 percent. Field uniformity and intensity can be affected by changes in
the location of the device with respect to the radiation source and the presence of radiation absorption and scattering
materials.
METHOD 1019.9
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MIL-STD-883-1
2.2 Dosimetry system. An appropriate dosimetry system shall be provided which is capable of carrying out the
measurements called for in 3.2. The following American Society for Testing and Materials (ASTM) standards and
guidelines or other appropriate standards and guidelines shall be used:
ASTM E 666 - Standard Method for Calculation of Absorbed Dose from Gamma or X Radiation.
ASTM E 668 - Standard Practice for the Application of Thermoluminescence Dosimetry (TLD) Systems
for Determining Absorbed Dose in Radiation-Hardness Testing of Electronic Devices.
ASTM E 1249 - Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices.
ASTM E 1250 - Standard Method for Application of Ionization Chambers to Assess the Low Energy
Gamma
Component of Cobalt 60 Irradiators Used in Radiation Hardness Testing of Silicon Electronic
Devices.
ASTM F 1892 - Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor
Devices.
ISO/ASTM 51275 Standard Practice for Use of a Radiochromic Film Dosimetry Systems.
These industry standards address the conversion of absorbed dose from one material to another, and the proper use
of various dosimetry systems. 1/
2.3 Electrical test instruments. All instrumentation used for electrical measurements shall have the stability,
accuracy, and resolution required for accurate measurement of the electrical parameters. Any instrumentation
required to operate in a radiation environment shall be appropriately shielded.
2.4 Test circuit board(s). Devices to be irradiated shall either be mounted on or connected to circuit boards together
with any associated circuitry necessary for device biasing during irradiation or for in-situ measurements. Unless otherwise
specified, all device input terminals and any others which may affect the radiation response shall be electrically connected
during irradiation, i.e., not left floating. The geometry and materials of the completed board shall allow uniform irradiation
of the devices under test. Good design and construction practices shall be used to prevent oscillations, minimize leakage
currents, prevent electrical damage, and obtain accurate measurements. Only sockets which are radiation resistant and
do not exhibit significant leakages (relative to the devices under test) shall be used to mount devices and associated
circuitry to the test board(s). All apparatus used repeatedly in radiation fields shall be checked periodically for physical or
electrical degradation. Components which are placed on the test circuit board, other than devices under test, shall be
insensitive to the accumulated radiation or they shall be shielded from the radiation. Test fixtures shall be made such that
materials will not perturb the uniformity of the radiation field intensity at the devices under test. Leakage current shall be
measured out of the radiation field. With no devices installed in the sockets, the test circuit board shall be connected to
the test system such that all expected sources of noise and interference are operative. With the maximum specified bias
for the test device applied, the leakage current between any two terminals shall not exceed ten percent of the lowest
current limit value in the pre-irradiation device specification. Test circuit boards used to bias devices during accelerated
annealing must be capable of withstanding the temperature requirements of the accelerated annealing test and shall be
checked before and after testing for physical and electrical degradation.
1/ Copies of these documents are available online at https://www.astm.org/ or from the American Society for Testing
and Materials, P O Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959.
METHOD 1019.9
7 June 2013
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MIL-STD-883-1
2.5 Cabling. Cables connecting the test circuit boards in the radiation field to the test instrumentation shall be as
short as possible. If long cables are necessary, line drivers may be required. The cables shall have low capacitance
and low leakage to ground, and low leakage between wires.
2.6 Interconnect or switching system. This system shall be located external to the radiation environment location,
and provides the interface between the test instrumentation and the devices under test. It is part of the entire test
system and subject to the limitation specified in 2.4 for leakage between terminals.
2.7 The environmental chamber. The environmental chamber for time-dependent effects testing, if required, shall
be capable of maintaining the selected accelerated annealing temperature within ±5°C. The environmental chamber
for cryogenic temperature testing, if required, shall be capable of maintaining the selected irradiation temperature
within ±5°C.
2.8 The irradiation temperature chamber. The irradiation temperature chamber, if required for elevated temperature
irradiation should be capable of maintaining a circuit under test at 100 C + 5 C while it is being irradiated. The
chamber should be capable of raising the temperature of the circuit under test from room temperature to the irradiation
temperature within a reasonable time prior to irradiation and cooling the circuit under test from the irradiation temperature
to room temperature in less than 20 minutes following irradiation. The irradiation bias shall be maintained during the
heating and cooling. The method for raising, maintaining and lowering the temperature of the circuit under test may be
by conduction through a heat sink using heating and cooling fluids, by convection using forced hot and cool air, or other
means that will achieve the proper results. For cryogenic temperature irradiations, the chamber should be capable of
maintaining the test device/unit at the required cryogenic temperature within + 5 C (e.g., liquid helium or liquid nitrogen)
while it is being irradiated. The chamber should be capable of maintaining the cryogenic temperature of the test
device/unit during post-irradiation electrical testing.
METHOD 1019.9
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MIL-STD-883-1
3. PROCEDURE. The test devices shall be irradiated and subjected to accelerated annealing testing (if required
for time-dependent effects testing) as specified by a test plan. This plan shall specify the device description,
irradiation conditions, device bias conditions, dosimetry system, operating conditions, measurement parameters and
conditions, and accelerated annealing test conditions (if required).
3.1 Sample selection and handling. Only devices which have passed the electrical specifications as defined in the
test plan shall be submitted to radiation testing. Unless otherwise specified, the test samples shall be randomly selected
from the parent population and identically packaged. Each part shall be individually identifiable to enable pre- and post-
irradiation comparison. For device types which are ESD-sensitive, proper handling techniques shall be used to prevent
damage to the devices.
3.2 Burn-in. For some devices, there are differences in the total dose radiation response before and after burn-in.
Unless it has been shown by prior characterization or by design that burn-in has negligible effect (parameters remain
within postirradiation specified electrical limits) on the total dose radiation response, then one of the following must be
done:
3.2.1 The manufacturer shall subject the radiation samples to the specified burn-in conditions prior to conducting
total dose radiation testing or
3.2.2 The manufacturer shall develop a correction factor, (which is acceptable to the parties to the test) taking into
account the changes in total dose response resulting from subjecting product to burn-in. The correction factor shall
then be used to accept product for total dose response without subjecting the test samples to burn-in.
3.3 Dosimetry measurements. The radiation field intensity at the location of the device under test shall be
determined prior to testing by dosimetry or by source decay correction calculations, as appropriate, to assure
conformance to test level and uniformity requirements. The dose to the device under test shall be determined one of
two ways: (1) by measurement during the irradiation with an appropriate dosimeter, or (2) by correcting a previous
dosimetry value for the decay of the 60Co source intensity in the intervening time. Appropriate correction shall be
made to convert from the measured or calculated dose in the dosimeter material to the dose in the device under test.
METHOD 1019.9
7 June 2013
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MIL-STD-883-1
3.4 Lead/Aluminum (Pb/Al) container. Test specimens shall be enclosed in a Pb/Al container to minimize dose
enhancement effects caused by low-energy, scattered radiation. A minimum of 1.5 mm Pb, surrounding an inner shield
of at least 0.7 mm Al, is required. This Pb/Al container produces an approximate charged particle equilibrium for Si and
for TLDs such as CaF2. The radiation field intensity shall be measured inside the Pb/Al container (1) initially, (2) when
the source is changed, or (3) when the orientation or configuration of the source, container, or test-fixture is changed.
This measurement shall be performed by placing a dosimeter (e.g., a TLD) in the device-irradiation container at the
approximate test-device position. If it can be demonstrated that low energy scattered radiation is small enough that it will
not cause dosimetry errors due to dose enhancement, the Pb/Al container may be omitted.
3.5 Radiation level(s). The test devices shall be irradiated to the dose level(s) specified in the test plan within ±10
percent. If multiple irradiations are required for a set of test devices, then the post-irradiation electrical parameter
measurements shall be performed after each irradiation.
3.6 Radiation dose rate. The radiation dose rate for bipolar and BiCMOS linear or mixed-signal parts used in
applications where the maximum dose rate is below 50 rad(Si)/s shall be determined as described in paragraph 3.13
below. Parts used in low dose rate applications, unless they have been demonstrated to not exhibit an ELDRS
response shall use Condition C, Condition D, or Condition E.
NOTE: Devices that contain both MOS and bipolar devices may require qualification to multiple subconditions to ensure
that both ELDRS and traditional MOS effects are evaluated.
3.6.1 Condition A. For condition A (standard condition) the dose rate shall be between 50 and 300 rad(Si)/s [0.5
and 3 Gy(Si)/s] 60Co 2/ The dose rates may be different for each radiation dose level in a series; however, the dose
rate shall not vary by more than ±10 percent during each irradiation.
3.6.2 Condition B. For condition B, for MOS devices only, if the maximum dose rate is < 50 rad(Si)/s in the
intended application, the parties to the test may agree to perform the test at a dose rate ≥ the maximum dose rate of
the intended application. Unless the exclusions in 3.12.1b are met, the accelerated annealing test of 3.12.2 shall be
performed.
3.6.3 Condition C. For condition C, (as an alternative) the test may be performed at the dose rate agreed to by the
parties to the test. Where the final user is not known, the test conditions and results shall be made available in the
test report with each purchase order.
3.6.4 Condition D. For condition D, for bipolar or BiCMOS linear or mixed-signal devices only, the parts shall be
irradiated at ≤10 mrad(Si)/s.
3.6.5 Condition E. For condition E, for bipolar or BiCMOS linear or mixed-signal devices only, the parts shall be
irradiated with the accelerated test conditions determined by characterization testing as discussed in paragraph
3.13.2. The accelerated test may include irradiation at an elevated temperature.
3.7 Temperature requirements. The following requirements shall apply for room temperature and elevated
temperature irradiation.
3.7.1 Room temperature irradiation. Since radiation effects are temperature dependent, devices under test shall
be irradiated in an ambient temperature of 24°C ±6°C as measured at a point in the test chamber in close proximity to
the test fixture. The electrical measurements shall be performed in an ambient temperature of 24°C ± 6°C. If devices
are transported to and from a remote electrical measurement site, the temperature of the test devices shall not be
allowed to increase by more than 10°C from the irradiation environment. If any other temperature range is required, it
shall be specified.
Caution: Annealing at ambient temperatures above the irradiation temperature may be significant, especially for the
extended times allowed for the time between irradiations at low dose rate (Condition D). It is important to
assure that the temperature of the parts is maintained within the above stated requirements to minimize
annealing.
2/ The SI unit for the quantity absorbed dose is the gray, symbol Gy. 100 rad = 1 Gy.
METHOD 1019.9
7 June 2013
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MIL-STD-883-1
3.7.2 Elevated temperature irradiation. For bipolar or BiCMOS linear or mixed-signal devices irradiated using
Condition E elevated temperature irradiation test, devices under test shall be irradiated in an ambient temperature
determined by characterization testing (see paragraph 3.13.2) as measured at a point in the test chamber in close
proximity to the test fixture (see paragraph 2.8 for details on raising and lowering the irradiation temperature).
3.7.3 Cryogenic temperature irradiation. For test devices/units operated in cryogenic temperature applications, the
devices/units shall be irradiated at cryogenic temperature (see paragraph 2.8) and maintained at cryogenic
temperature for post exposure characterization testing (see paragraph 3.10). The test device/units shall remain at
cryogenic temperature throughout all irradiations and characterization testing until the final total dose exposure and
characterization have been completed.
3.8 Electrical performance measurements. The electrical parameters to be measured and functional tests to be
performed shall be specified in the test plan. As a check on the validity of the measurement system and pre- and
post-irradiation data, at least one control sample shall be measured using the operating conditions provided in the
governing device specifications. For automatic test equipment, there is no restriction on the test sequence provided
that the rise in the device junction temperature is minimized. For manual measurements, the sequence of parameter
measurements shall be chosen to allow the shortest possible measurement period. When a series of measurements
is made, the tests shall be arranged so that the lowest power dissipation in the device occurs in the earliest
measurements and the power dissipation increases with subsequent measurements in the sequence.
The pre- and post-irradiation electrical measurements shall be done on the same measurement system and the same
sequence of measurements shall be maintained for each series of electrical measurements of devices in a test
sample. Pulse-type measurements of electrical parameters should be used as appropriate to minimize heating and
subsequent annealing effects. Devices which will be subjected to the accelerated annealing testing (see 3.12) may
be given a preirradiation burn-in to eliminate burn-in related failures.
3.9 Test conditions. The use of in-flux or not in-flux testing shall be specified in the test plan. (This may depend
on the intended application for which the data are being obtained.) The use of in-flux testing may help to avoid
variations introduced by post-irradiation time dependent effects. However, errors may be incurred for the situation
where a device is irradiated in-flux with static bias, but where the electrical testing conditions require the use of
dynamic bias for a significant fraction of the total irradiation period. Not-in-flux testing generally allows for more
comprehensive electrical testing, but can be misleading if significant post-irradiation time dependent effects occur.
3.9.1 In-flux testing. Each test device shall be checked for operation within specifications prior to being irradiated.
After the entire system is in place for the in-flux radiation test, it shall be checked for proper interconnections, leakage
(see 2.4), and noise level. To assure the proper operation and stability of the test setup, a control device with known
parameter values shall be measured at all operational conditions called for in the test plan. This measurement shall
be done either before the insertion of test devices or upon completion of the irradiation after removal of the test
devices or both.
3.9.2 Remote testing. Unless otherwise specified, the bias shall be removed and the device leads placed in
conductive foam (or similarly shorted) during transfer from the irradiation source to a remote tester and back again for
further irradiation. This minimizes post-irradiation time dependent effects.
3.9.3 Bias and loading conditions. Bias and loading conditions for test devices during irradiation or accelerated
annealing shall be within ±10 percent of those specified by the test plan. The bias, loading and internal dose-pattern
applied to the test devices shall be selected to produce the greatest radiation induced damage or the worst-case
damage for the intended application, if known. The bias, loading and internal dose-pattern conditions shall remain
constant throughout a step-wise Total Ionizing Dose (TID) exposure and anneal. If any of the bias, loading or internal
dose-pattern conditions are not at the worst-case condition, then a justification for the conditions used shall be
provided in the test plan and test report. While maximum voltage is often worst case some bipolar linear device
parameters (e.g. input bias current or maximum output load current) exhibit more degradation with 0 V bias. The
specified bias shall be maintained on each device in accordance with the test plan. Bias shall be checked
immediately before and after irradiation. Care shall be taken in selecting the loading such that the rise in the junction
temperature is minimized.
METHOD 1019.9
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MIL-STD-883-1
3.10 Post-irradiation procedure. Unless otherwise specified, the following time intervals shall be observed:
a. The time from the end of an irradiation to the start of electrical measurements shall be a maximum of 1 hour
for Condition A. For Conditions B, C, D and E, the time from the end of an irradiation to the start of electrical
measurements may be equal to 10% of the incremental irradiation time up to (but not exceeding) 72 hours if
this time is greater than 1 hour, otherwise it shall be a maximum of 1 hour. As an option for remote electrical
testing, for Conditions A, B, C, D and E, parts may be packed in dry ice until the start of electrical testing, but
only if packed within 15 minutes after the completion of irradiation. While in dry ice, the part leads shall be
shorted, the parts shall be verifiably maintained at a maximum temperature of -60 C, and the time from
completion of irradiation until the start of electrical testing may not exceed 72 hours. The electrical testing
shall be conducted after the parts have been restored to room temperature but within 30 minutes after the
parts are removed from the dry ice. Electrical testing shall be as specified in paragraph 3.7.1. The times at
room temperature and the times and temperature for the dry ice procedure may be different if demonstrated
by a characterization test as described in paragraph 3.10.c below.
b. The time to perform the electrical measurements and to return the device for a subsequent irradiation, if any,
shall be within two hours of the end of the prior irradiation for Condition A. For conditions B, C, D and E, the
time to perform the electrical measurements and to return the device for a subsequent irradiation, if any, may
be equal to 20% of the incremental irradiation time up to (but not exceeding) 120 hours if this time is greater
than 2 hours, otherwise it shall be a maximum of 2 hours. As an option for continued additional irradiation
when parts are electrically tested at a remote location, for Conditions A, B, C, D and E parts may be packed
in dry ice until the start of irradiation, but only if packed within 15 minutes after the completion of electrical
testing. While in the dry ice, the part leads shall be shorted, the parts shall be verifiably maintained at a
maximum temperature of -60 C, and the time from completion of electrical testing until the start of irradiation
may not exceed 72 hours. The radiation exposure shall begin after the parts have been restored to room
temperature but within 30 minutes after the parts are removed from the dry ice. The times at room
temperature and the times and temperature for the dry ice procedure may be different if demonstrated by a
characterization test as described in paragraph 3.10.c below.
c. If the dry ice test method is used, characterization test shall be performed on annealing at the particular
technology node of study to demonstrate that the annealing will be less than 10% for all critical parameters
compared to room temperature data taken within 1 hour after irradiation. Other times and temperatures than
those listed in paragraphs 3.10.a and 3.10.b may be considered as part of the characterization test.
However, the time for electrical measurements following irradiation shall not exceed 72 hours and the time
between successive irradiations shall not exceed 120 hours. For example, if the manufacturer’s cold
temperature specification limit is higher than -60 C this higher temperature may be allowed. For another
example, if the parts show very little annealing at room temperature following Condition A irradiation, the one
hour and two hour limits may want to be increased. For any exceptions to the times and temperatures in
3.10.a and 3.10.b it must be demonstrated that the annealing under these different conditions is within 10%
for all critical parameters compared to room temperature data taken within 1 hour after irradiation, or the
appropriate time limit for the irradiation test condition, if greater than 1 hour. The characterization test results
shall be included with the test report as specified in paragraph 3.14.
To minimize time dependent effects, these intervals shall be as short as possible. The sequence of parameter
measurements shall be maintained constant throughout the tests series.
METHOD 1019.9
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3.11 Extended room temperature anneal test. The tests of 3.1 through 3.10 are known to be overly conservative
for some devices in a very low dose rate environment (e.g. dose rates characteristic of space missions). The
extended room temperature anneal test provides an estimate of the performance of a device in a very low dose rate
environment even though the testing is performed at a relatively high dose rate (e.g. 50-300 rad(Si)/s). The
procedure involves irradiating the device per steps 3.1 through 3.10 and post-irradiation subjecting the device under
test to a room temperature anneal for an appropriate period of time (see 3.11.2c) to allow leakage-related parameters
that may have exceeded their pre-irradiation specification to return to within specification. The procedure is known to
lead to a higher rate of device acceptance in cases:
a. where device failure when subjected to the tests in 3.1 through 3.10 has been caused by the buildup of
trapped positive charge in relatively soft oxides, and
b. where this trapped positive charge anneals at a relatively high rate.
3.11.1 Need to perform an extended room temperature anneal test. The following criteria shall be used to
determine whether an extended room temperature anneal test is appropriate:
a. The procedure is appropriate for either MOS or bipolar technology devices.
b. The procedure is appropriate where only parametric failures (as opposed to functional failure) occurs. The
parties to the test shall take appropriate steps to determine that the device under test is subject to only
parametric failure over the total ionizing dose testing range.
c. The procedure is appropriate where the natural annealing response of the device under test will serve to
correct the out-of-specification of any parametric response. Further, the procedure is known to lead to a
higher rate of device acceptance in cases where the expected application irradiation dose rate is sufficiently
low that ambient temperature annealing of the radiation induced trapped positive charge can lead to a
significant improvement of device behavior. Cases where the expected application dose rate is lower than
the test dose rate and lower than 0.1 rad(Si)/s should be considered candidates for the application of this
procedure. The parties to the test shall take appropriate steps to determine that the technology under test
can provide the required annealing response over the total ionizing dose testing range.
METHOD 1019.9
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MIL-STD-883-1
3.11.2 Extended room temperature anneal test procedure. If the device fails the irradiation and testing specified in
3.1 through 3.10, an additional room temperature annealing test may be performed as follows:
a. Following the irradiation and testing of 3.1 through 3.10, subject the device under test to a room temperature
anneal under worst-case static bias conditions. For information on worst case bias see 3.9.3,
b. The test will be carried out in such a fashion that the case of the device under test will have a temperature
within the range 24°C ± 6°C.
c. Where possible, the room temperature anneal should continue for a length of time great enough to allow
device parameters that have exceeded their pre-irradiation specification to return to within specification or
post-irradiation- parametric limit (PIPL) as established by the manufacturer. However, the time of the room
temperature anneal shall not exceed tmax, where
Dspec
tmax =
Rmax
Dspec is the total ionizing dose specification for the part and Rmax is the maximum dose rate for the intended
use.
d. Test the device under test for electrical performance as specified in 3.7 and 3.8. If the device under test
passes electrical performance tests following the extended room temperature anneal, this shall be
considered acceptable performance for a very low dose rate environment in spite of having previously failed
the post-irradiation and electrical tests of 3.1 through 3.10.
3.12 MOS accelerated annealing test. The accelerated annealing test provides an estimate of worst-case
degradation of MOS microcircuits in low dose rate environments. The procedure involves heating the device
following irradiation at specified temperature, time and bias conditions. An accelerated annealing test (see 3.12.2)
shall be performed for cases where Time Dependent Effects (TDE) can cause a device to degrade significantly or fail.
Only standard testing shall be performed as specified in 3.1 through 3.10 for cases where TDE are known not to
cause significant device degradation or failure (see 3.12.1) or where they do not need to be considered, as specified
in 3.12.1.
METHOD 1019.9
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MIL-STD-883-1
3.12.1 Need to perform accelerated annealing test. The parties to the test shall take appropriate steps to
determine whether accelerated annealing testing is required. The following criteria shall be used:
a. The tests called out in 3.12.2 shall be performed for any device or circuit type that contains MOS circuit
elements (i.e., transistors or capacitors).
b. TDE tests may be omitted if:
1. devices are known not to contain MOS elements by design, or
2. the ionizing dose in the application, if known, is below 5 krad(Si), or
3. the lifetime of the device from the onset of the irradiation in the intended application, if known, is short
compared with TDE times, or
4. the test is carried out at the dose rate of the intended application, or
5. the device type or IC technology has been demonstrated via characterization testing not to exhibit TDE
changes in device parameters greater than experimental error (or greater than an otherwise specified
upper limit) and the variables that affect TDE response are demonstrated to be under control for the
specific vendor processes.
At a minimum, the characterization testing in (5) shall include an assessment of TDE on propagation
delay, output drive, and minimum operating voltage parameters. Continuing process control of
variables affecting TDE may be demonstrated through lot sample tests of the radiation hardness of
MOS test structures.
c. This document provides no guidance on the need to perform accelerated annealing tests on technologies
that do not include MOS circuit elements.
METHOD 1019.9
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MIL-STD-883-1
3.12.2 Accelerated annealing test procedure. If the device passes the tests in 3.1 through 3.10 or if it passes 3.11
(if that procedure is used) to the total ionizing dose level specified in the test plan or device specification or drawing
and the exclusions of 3.12.1 do not apply, the accelerated annealing test shall be conducted as follows:
a. Overtest.
1. Irradiate each test device to an additional 0.5-times the specified dose using the standard test
conditions (3.1 through 3.10). Note that no electrical testing is required at this time.
2. The additional 0.5-times irradiation in 3.12.2.a.1may be omitted if it has been demonstrated via
characterization testing that:
a. none of the device propagation delay, output drive, and minimum operating voltage parameters
recover toward their pre-irradiation value greater than experimental accelerated annealing test of
3.12.2.b, and
b. the irradiation biases chosen for irradiation and accelerated annealing tests are worst-case for the
response of these parameters during accelerated annealing.
The characterization testing to establish worst-case irradiation and annealing biases shall be performed
at the specified level. The testing shall at a minimum include separate exposures under static and
dynamic irradiation bias, each followed by worst-case static bias during accelerated annealing
according to 3.12.2.b.
b. Accelerated annealing. Heat each device under worst-case static bias conditions in an environmental
chamber according to one of the following conditions:
1. At 100°C ±5°C for 168 ±12 hours, or
2. At an alternate temperature and time that has been demonstrated via characterization testing to cause
equal or greater change in the parameter(s) of interest, e.g., propagation delay, output drive, and
minimum operating voltage, in each test device as that caused by 3.12.2.b.1, or
3. At an alternate temperature and time which will cause trapped hole annealing of >60% and interface
state annealing of <10% as determined via characterization testing of NMOS test transistors from the
same process. It shall be demonstrated that the radiation response of test transistors represent that of
the device under test.
c. Electrical testing. Following the accelerated annealing, the electrical test measurements shall be performed
as specified in 3.8 and 3.9.
METHOD 1019.9
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MIL-STD-883-1
3.13 Test procedure for Bipolar and BiCMOS linear or mixed signal devices with intended application dose rates
less than 50 rad(Si)/s. Many bipolar linear parts exhibit ELDRS, which cannot be simulated with a room temperature
50-300 rad(Si)/s irradiation plus elevated temperature anneal, such as that used for MOS parts (see ASTM-F-1892
for more technical details). Parts that exhibit ELDRS shall be tested either at the intended application dose rate, at a
prescribed low dose rate to an overtest radiation level, or with an accelerated test such as an elevated temperature
irradiation test that includes a parameter delta design margin (see characterization test for ELDRS parts, paragraph
3.13.2). For part types that have not been characterized for ELDRS a characterization test shall be performed to
determine if the part types are ELDRS susceptible.
Need to perform ELDRS testing.
a. The ELDRS tests described in 3.13 may be omitted if:
1. devices are known not to contain bipolar transistors by design, or
2. devices are known not to contain any linear circuit functions by design.
3. the device type and IC technology have been demonstrated via characterization testing not to
exhibit ELDRS (paragraph 3.13.1) in device parameters greater than experimental error and the
variables that affect ELDRS response are demonstrated to be under control for the specific vendor
processes.
3.13.1 Characterization test to determine if a part exhibits ELDRS. If a part cannot be eliminated by the criteria in
paragraph 3.13 and has not been characterized for ELDRS then the part shall be subjected to a characterization test
to determine if it exhibits ELDRS. This test shall be performed at two dose rates. If the part meets the criteria for
ELDRS then an additional characterization test may be performed to establish the irradiation conditions for production
or lot acceptance tests.
3.13.1.1 Characterization test to determine if a part exhibits ELDRS. Select a minimum random sample of 21
devices from a population representative of recent production runs. Smaller sample sizes may be used if agreed upon
between the parties to the test. All of the selected devices shall have undergone appropriate elevated temperature
reliability screens, e.g. burn-in and high temperature storage life. Divide the samples into four groups of 5 each and
use the remaining part for a control. Perform pre-irradiation electrical characterization on all parts assuring that they
meet the Group A electrical tests. Irradiate 5 samples under a 0 volt bias and another 5 under the irradiation bias
given in the acquisition specification at 50-300 rad(Si)/s and room temperature. Irradiate 5 samples under a 0 volt bias
and another 5 under irradiation bias given in the acquisition specification at < 10 mrad(Si)/s and room temperature.
Irradiate all samples to the same dose levels, including 0.5 and 1.0 times the anticipated specification dose, and
repeat the electrical characterization on each part at each dose level. Post irradiation electrical measurements shall
be performed per paragraph 3.10 where the low dose rate test is considered Condition D. Calculate the radiation
induced change in each electrical parameter (para) for each sample at each radiation level. Calculate the ratio of the
median para at low dose rate to the median para at high dose rate for each irradiation bias group at each total dose
level. If this ratio exceeds 1.5 for any of the most sensitive parameters then the part is considered to be ELDRS
susceptible. This test does not apply to parameters which exhibit changes that are within experimental error or whose
values are below the pre-irradiation electrical specification limits at low dose rate at the specification dose.
METHOD 1019.9
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MIL-STD-883-1
3.13.2 Characterization of ELDRS parts to determine the irradiation conditions for production or lot acceptance
testing. If the part type is known to exhibit ELDRS or has been shown to exhibit ELDRS by the characterization tests
in paragraphs 3.13.1.1 then the production or lot acceptance testing may be performed using the default low dose
rate test at < 10 mrad(Si)/s (Condition D) or an accelerated test (Condition E). For the accelerated test a detailed
characterization shall be performed to establish the test parameters for the test The accelerated test approach may
include one of the following methods: 1) a room temperature low dose rate irradiation at a dose rate > 10 mrad(Si)/s,
2) an elevated temperature irradiation, 3) combinations of high dose rate tests and elevated temperature anneals, 4)
switched dose rates, or 5) some other form of accelerated testing (for guidance on characterization of ELDRS parts
see ASTM F1892 Appendix X2). The characterization testing of the ELDRS parts must demonstrate that the
irradiation test procedure for production or lot acceptance testing will bound the low dose rate response for all critical
electrical parameters at a dose rate of < 10 mrad(Si)/s using a combination of overtest and/or parameter delta design
margins. Hence the characterization testing shall include irradiation at < 10 mrad(Si)/s, to the specification dose, as a
baseline for comparison.
3.13.3 Low dose rate or elevated temperature irradiation test for bipolar or BiCMOS linear or mixed-signal
devices. All devices that do not meet the exception of 3.13.a shall be tested using one of the following test
conditions:
a. Test at the agreed to dose rate. Irradiate each test device at the dose rate described in 3.6.3 Condition C
using the standard test conditions (3.1 through 3.10).
b. Test at a prescribed low dose rate. Irradiate each test device at the dose rate described in 3.6.4 Condition D
using the standard test conditions (3.1 through 3.10) with the following additional requirements: an overtest
factor of 1.5 shall be applied to the radiation level, i.e. the part must pass at a radiation level of 1.5 times the
specification dose to be acceptable..
c. Test using an accelerated test method. Irradiate each test device with the accelerated test condition
described in 3.6.5 Condition E using the standard test conditions (3.1 through 3.10) with the following
additional requirements: a parameter delta design margin and/or overtest factor shall be applied as
established through characterization testing described in paragraph 3.13.2.
3.14 Test report. As a minimum, the report shall include the device type number, serial number, the manufacturer,
package type, controlling specification, date code, and any other identifying numbers given by the manufacturer. The
bias circuit, parameter measurement circuits, the layout of the test apparatus with details of distances and materials
used, and electrical noise and current leakage of the electrical measurement system for in-flux testing shall be
reported using drawings or diagrams as appropriate. Each data sheet shall include the test date, the radiation source
used, the bias conditions during irradiation, the ambient temperature around the devices during irradiation and
electrical testing, the duration of each irradiation, the time between irradiation and the start of the electrical
measurements, the duration of the electrical measurements and the time to the next irradiation when step irradiations
are used, the irradiation dose rate, electrical test conditions, dosimetry system and procedures and the radiation test
levels. The pre- and post-irradiation data shall be recorded for each part and retained with the parent population data
in accordance with the requirements of MIL-PRF-38535 or MIL-PRF-38534. Any anomalous incidents during the test
shall be fully documented and reported. The accelerated annealing procedure, if used, shall be described. Any other
radiation test procedures or test data required for the delivery shall be specified in the device specification, drawing or
purchase order.
METHOD 1019.9
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MIL-STD-883-1
4. SUMMARY. The following details shall be specified in the applicable acquisition document as required:
a. Device-type number(s), quantity, and governing specifications (see 3.1).
b. Radiation dosimetry requirements (see 3.3).
c. Radiation test levels including dose and dose rate (see 3.5 and 3.6).
d. Irradiation, electrical test and transport temperatures if other than as specified in 3.7.
e. Test methodology used if not maintaining Cryogenic Temperature as specified in 3.7.
f. Electrical parameters to be measured and device operating conditions during measurement (see 3.8).
g. Test conditions, i.e., in-flux or not-in-flux type tests (see 3.9).
h. Bias, loading and internal dose-pattern conditions for devices during irradiation (see 3.9.3).
i. Time intervals of the post-irradiation measurements (see 3.10).
j. Requirement for extended room temperature anneal test, if required (see 3.11).
k. Requirement for accelerated annealing test, if required (see 3.12).
l. Requirement for test for ELDRS, if required (see 3.13).
m. Requirement for ELDRS testing, if required (see 3.13.3).
n. Documentation required to be delivered with devices (see 3.14).
METHOD 1019.9
7 June 2013
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MIL-STD-883-1
SELECT DOSE RATE

SEE PARA. 3.6
IRRADIATE TO SPECIFIED DOSE

SEE PARA. 3.9
PERFORM SPECIFIED ELECTRICAL TESTS

SEE PARA. 3.8
PASS FAIL
DETERMINE IF EXTENDED ROOM TEMPER-

ATURE ANNEAL TEST IS REQUIRED
SEE PARA. 3.11.1
PERFORM SPECIFIED
ELECTRICAL TESTS FAIL
SEE PARA. 3.8
PASS
NO
DETERMINE IF ACCELERATED
PASS ANNEALING TEST IS REQUIRED
SEE PARA. 3.12.1
YES
DETERMINE IF 0.5X OVERTEST

IS REQUIRED
SEE PARA. 3.12.2.a.2
NO YES
IRRADIATE AN ADDITIONAL 0.5 X

SPECIFIED DOSE
SEE PARA. 3.12.2.a
PERFORM ONE OF THREE ACCELERATED

ANNEALING PROCEDURES
SEE PARA. 3.12.2.b
PASS FAIL
PERFORM SPECIFIED ELECTRICAL TESTS
SEE PARA. 3.8
FIGURE 1019-1. Flow diagram for ionizing radiation test procedure for MOS and digital bipolar devices.
METHOD 1019.9
7 June 2013
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MIL-STD-883-1
Determine the need for ELDRS testing

See Para. 3.13
Yes No
Perform standard test

Pass (Para 3.6.1 Condition A) Fail
See Para 3.1 thru 3.10
Test at the intended Perform low dose rate test accelerated ELDRS test
application dose rate per Para 3.6.4, Condition D per Para 3.6.5, Condition E
Para 3.6.3
Condition C Dose rate < 10 mrad(Si)/s Test conditions per
characterization testing as
Dose = 1.5 spec described in 3.13.2 including
Fail overtest factors and
Pass
parameter delta design
margins.
Pass Fail Pass Fail
Figure 1019-2. Flow diagram for ionizing radiation test procedure for bipolar (or BiCMOS)
linear or mixed-signal devices.
METHOD 1019.9
7 June 2013
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MIL-STD-883-1
METHOD 1019.9
7 June 2013
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MIL-STD-883-1
METHOD 1020.1
DOSE RATE INDUCED LATCHUP TEST PROCEDURE
1. PURPOSE. This test procedure defines the detailed requirements for performing latchup testing of microcircuits
to identify susceptibility to dose rate induced latchup.
1.1 Definitions. Definitions of terms used in this procedure are provided below:
a. Dose rate induced latchup. Dose rate induced latchup is regenerative device action in which a parasitic
region (e.g., a four layer p-n-p-n or n-p-n-p path) is turned on by a photocurrent generated by a pulse of
ionizing radiation, and remains on for an indefinite period of time after the photocurrent subsides. The
device will remain latched as long as the power supply delivers voltage greater than the holding voltage and
current greater than the holding current. Latchup disrupts normal circuit operation in some portion of the
circuit, and may also cause catastrophic failure due to local heating of semiconductor regions, metallization
or bond wires.
b. Latchup windows. A latchup window is the phenomenon in which a device exhibits latchup in a specific
range of dose rates. Above and below this range, the device does not latchup. A device may exhibit more
than one latchup window. This phenomenon has been observed for some CMOS logic devices, oxide
sidewall logic and LSI memories, and may occur in other devices.
c. Combinational logic. Combinational (determined) logic devices are those whose output is solely
determined by the logic signals at its inputs (except for switching delays). Combinational logic circuits
contain no internal storage elements, and include multiplexers, decoders, and gates.
d. Sequential logic. Sequential (nondetermined) devices are those in which the output state at any given time
depends on the sequence and time relationship of logic signals that were previously applied to its inputs.
Sequential logic circuits contain internal storage elements. Examples of sequential logic devices are shift
registers, memories, counters, and flip-flops.
e. Recovery period. The recovery period is the time interval in which the device supply current recovers from
the radiation pulse.
f. Holding voltage and holding current: The voltage and current above which latchup is sustained.
METHOD 1020.1
15 November 1991
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MIL-STD-883-1
1.2 Test plan. Prior to latchup testing, a latchup test plan shall be prepared which describes the radiation source,
the dosimetry techniques, test equipment and conditions to be used. A detailed procedure for each device type to be
tested shall be prepared, either as part of the test plan or in separate test procedure documents. The procedure shall
include bias conditions, test sequence, and schematics of the test setup. The test plan shall be approved by the
acquiring activity, and as a minimum, the items listed below shall be provided in the test plan or test procedure:
a. Device types, including package types, and quantities to be tested.
b. Traceability requirements, such as requirements for serialization, wafer or lot traceability, etc.
c. Requirements for data reporting and submission.
d. Temperature for test (see 2.3.6).
e. Block diagram or schematic representation of test set up.
f. Electrical parameters to be monitored and device operating conditions, including bias conditions and
functional test requirements before, during, and after the radiation pulse.
g. Group A electrical test requirements for pre- and post-latchup testing, to include test limits and failure
criteria.
h. Radiation pulse width(s), radiation dose(s) per pulse and dose rate range(s).
i. Total dose limit for each device type.
j. Failure criteria.
In addition to those items listed above, the test plan or procedure for production tests shall include the following:
k. Method(s) to detect latchup, e.g., monitoring of the supply current, functional testing (to include test vector
set, etc.).
l. Recovery period and when to begin post-irradiation in-situ tests. The recovery period for SSI devices is
typically 50 to 300 s; however, other device types may require a longer recovery period, or there may be
special program requirements which call for earlier recovery.
m. Functional test requirements. The functional tests shall demonstrate that the device responds properly to
input commands and that the device is operating properly. Note that high speed functional tests may be
incompatible with the long leads and unavoidable capacitance associated with most latchup test systems.
n. Exposure states or operating conditions. For digital devices, a specific state and its complement are
usually used. However, for more complex devices, more than two exposure states may be required, and
the specific states shall be as determined by the characterization testing (and analysis, if required) and
specified in the test plan or procedure.
o. Bias and load conditions. Unless otherwise specified, the maximum rated operating supply voltage shall be
used.
p. Outputs to be monitored.
q. The minimum dc current that must be available from the power supply, or the value of series current limiting
resistor that has been approved by the acquiring activity. (Note that any current limiting resistor shall be
less than or equal to that in the system application and shall be approved by the acquiring activity prior to
latchup testing.)
METHOD 1020.1
15 November 1991
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MIL-STD-883-1
2. APPARATUS. The apparatus shall consist of the radiation source, the dosimetry system, and the latchup test
system which includes the device interface fixture, the test circuit, cabling, timing, and temperature control systems.
Precautions shall be observed to obtain adequate electrical grounding to ensure low noise.
2.1 Radiation source. Either of two radiation sources shall be used for latchup testing: 1) a flash x-ray machine
(FXR), or 2) an electron linear accelerator (LINAC). The FXR shall be used in the x-ray mode and the LINAC in the
electron (e-beam) mode. The FXR peak (endpoint) energy shall be 2 MeV or greater, and the LINAC beam energy
shall be 10 MeV or greater. The pulse width shall be from 20 to 100 ns, or as specified in the acquisition document,
and the uniformity of the radiation field in the device irradiation volume shall be ±15 percent as measured by the
dosimetry system. The dose per radiation exposure shall be as specified in the test plan or procedure. (See 3.5.1 for
production test requirements.)
2.2 Dosimetry system. A dosimetry system shall be used which provides a measurement accuracy within ±15
percent. A calibrated PIN diode may be used to obtain both the shape of the radiation pulse and the dose, and the
following DOD adopted American Society for Testing and Materials (ASTM) standards or their equivalent may be
used:
ASTM E 666 - Standard Method for Calculation of Absorbed Dose from Gamma or X Radiation.
ASTM E 668 - Standard Practice for the Application of Thermoluminescence Dosimetry (TLD) Systems
for Determining Absorbed Dose in Radiation Hardness Testing of Electronic Devices.
ASTM E 1249 - Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic
Devices.
METHOD 1020.1
15 November 1991
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MIL-STD-883-1
2.3 Latchup test system. A block diagram of a typical latchup test system is presented on figure 1020-1. The
instrumentation shall be capable of establishing the required test conditions and measuring and recording the
required parameters. The test system shall be designed to maintain the instantaneous bias supply voltage within the
limits specified in 2.3.2 below for both transient and dc conditions, including a latchup condition. The test system
shall not limit the ac or dc bias supply current to values that prevent latchup from occurring or being detected.
Components other than the device under test (DUT) shall be insensitive to the expected radiation levels, or they shall
be shielded from the radiation. The system used for latchup testing shall contain the following elements:
2.3.1 Device interface fixture. The DUT shall be interfaced to the test circuitry with a fixture having good high
frequency characteristics, and providing a low inductance connection to the power supply and bypass capacitor.
2.3.2 Bias and functional test circuit. The test circuit for each device type shall provide worst case bias and load
conditions for the DUT, and shall perform in-situ functional testing of the DUT as specified in the test plan or
procedure. Line drivers shall be used, when necessary, to isolate the DUT from significant extraneous loading by the
cabling. The characteristics of the line drivers (e.g., linearity, dynamic range, input capacitance, transient response,
and radiation response) shall be such that they do not reduce the accuracy of the test. The power supply shall have
low source impedance and meet the following requirements:
a. The power supply voltage shall drop no more than 20 percent at the DUT during the rise time of the DUT
during the rise time of the DUT supply current, and no more than 10 percent thereafter. These
requirements can be achieved by selecting appropriate capacitance values and minimizing lead lengths of
the stiffening capacitors. A high frequency, radiation resistant capacitor shall be placed at the DUT for each
bias supply voltage, and larger capacitors may be placed a short distance from the fixture shielded from the
radiation.
b. DC power supplies shall provide sufficient current for device operation and to maintain holding current if
latchup occurs.
c. Power supplies connected in series with digital ammeters (current probes or current sensors) may be used
only if the ammeter is physically located on the power supply side of the bypass capacitor. The ammeter
should be selected to minimize the series dc voltage drop at the maximum expected load current. If
necessary, the power supply voltage should be adjusted upwards slightly to ensure that the voltage
measured at the DUT is within the specified limits for the test conditions.
d. Current limiting resistors shall not be used in series with the supply voltage unless approved by the
acquiring activity prior to latchup testing, and the value of the resistance is less than or equal to that in the
system application.
CAUTION: Current limiting resistors can produce a relatively narrow latchup window which may reside
entirely outside the standard testing range of 500 ±200 rad(Si). If current limiting is used,
especially when used as a means of latchup prevention, characterization tests shall be
performed to determine the dose rate appropriate for production testing.
If current limiting resistors are used, they shall be placed sufficiently close to the DUT to ensure that the
voltage drop at the DUT during the transient photocurrent rise time is governed by the resistance and not
the inductance from the leads (i.e., voltage drop is approximately IR and not L di/dt). The requirements of
paragraphs a-c apply with the reference point being the power supply side of the current limiting resistor,
instead of the DUT supply pin(s). For applications using small value bypass capacitors directly at the power
supply pin(s), the same, or larger, value of capacitance must be used in the test circuit when current limiting
resistors are used. As noted above, leads shall be kept to the minimum practical lengths.
2.3.3 Cabling. Cabling shall be provided to connect the test circuit board to the test instrumentation. All cables
shall be as short as possible. Coaxial cables, terminated in their characteristic impedance, should be used if high
speed functional testing is to be performed and line drivers are used to isolate the monitoring equipment.
METHOD 1020.1
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MIL-STD-883-1
2.3.4 Monitoring and recording equipment. Equipment to monitor and record the parameters required in the test
plan or procedure shall be integrated into the latchup test system. Oscilloscopes and transient digitizers may be used
to monitor the transient response of the device. Additionally, the dose records from each pulse shall be correlated to
the specific device(s) irradiated by that pulse.
2.3.5 Timing control. An adjustable timing control system shall be incorporated into the latchup test system such
that post-irradiation in-situ functional testing is performed at the specified time, typically 50 s to 300 s, after the
radiation pulse. Longer time periods, as long as several minutes, may be required to complete the functional tests for
complex devices.
2.3.6 Temperature control. When testing at other than room temperature, a temperature control system shall
control the temperature of the DUT to ±10°C of the specified temperature. Unless otherwise specified, latchup testing
shall be performed at the highest device operating temperature in the system application or 15°C below the maximum
rated temperature of the device, whichever is less. (See cautionary note below.) If an application temperature is not
known, or is not available, the device shall be tested at 15°C below the maximum rated temperature. Heat sinking
may be required to ensure that the device is not operated above the maximum rated temperature.
CAUTION: The thermal conduction through the latchup test sockets is often much less than that through the pins in
soldered boards.
METHOD 1020.1
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MIL-STD-883-1
3. PROCEDURE.
3.1 Device identification. In all cases, devices shall be serialized, and the applicable recorded test data shall be
traceable to the individual device.
3.2 Radiation safety. All personnel shall adhere to the health and safety requirements established by the local
radiation safety officer or health physicist.
3.3 Total dose limit. Unless otherwise specified, any device exposed to more than 10 percent of its total dose limit
shall be considered to have been destructively tested. The total dose limit shall be determined for each device type
to be tested, and shall be specified in the test plan.
3.4 Characterization testing and analysis. Characterization tests should be performed on new or unfamiliar device
types to determine their performance as a function of dose rate and to establish requirements for production testing.
Because latchup is dependent on lot to lot variations, samples for characterization tests should be pulled from the
production lot(s). The following are examples of information gained from characterization testing:
a. Latchup threshold as a function of radiation dose, dose rate, and pulse width.
b. Existence and dose rate range of latchup windows. To check for windows, latchup testing is performed
over a wide range of dose rates in fine increments.
c. Worst case or unique conditions that cause the device to exhibit latchup, such as operating voltage,
temperature, and bias conditions.
d. Method(s) to detect latchup, e.g., monitoring supply current, functional testing, or both. Note that in-situ
functional tests must be thorough enough to determine if a small portion of a large circuit has latched
without drawing enough additional current to significantly increase the device supply current.
e. Group A electrical parameter degradation subsequent to latchup testing.
f. Holding current and holding voltage.
Before testing LSI/VLSI circuits, an analysis is often required to determine likely latchup paths and requirements for
bias conditions, exposure states, and functional testing. These large circuits often have too many outputs to be
monitored individually, and through the analysis, monitored outputs can be limited to those most apt to show a
change should latchup occur.
METHOD 1020.1
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3.5 Production testing. Prior to production testing, characterization testing shall be performed at least once for
new or unfamiliar device types (i.e., new design or process, unfamiliar or very complex devices with little or not
latchup test history). The results of the characterization tests are used to develop the requirements for the production
tests (see 3.4). These requirements are specified in the applicable test plan or procedure and include those items
listed in 1.2.
3.5.1 General requirements for production tests. Unless otherwise specified, the dose per pulse shall be 500 ±200
rad(Si) with a pulse width between 20 and 100 ns, inclusive. Circuits shall be exposed to radiation pulses in at least
two difference states (for digital devices) as specified in the test plan or procedure. Unless otherwise specified,
determination of latchup shall be based on a combination of DUT supply current and output signal (voltage) recovery
within the specified time limits and the results of post-irradiation in-situ functional tests. Power supplied to the DUT
shall not be interrupted until after the post-irradiation in-situ tests are completed. The DUT supply current shall be
measured immediately before and at the specified time after the radiation pulse to determine if the supply current has
returned to within specified limits. A functional test shall be performed immediately after the recovery period to
demonstrate that the device functions properly. Unless otherwise specified, tests shall be performed at the highest
device operating temperature in the system application or 15°C below the maximum rated temperature of the device,
whichever is less. Current limiting resistors are allowed only if prior approval is obtained from the acquiring activity
and the value of the resistor is less than or equal to that in the system application. Unless otherwise specified,
endpoint electrical tests (group A, subgroups 1 and 7, as a minimum) shall be performed pre- and post-latchup
testing. These group A tests are generally not performed in-situ, and there is no time limit on performing the group A
tests. If group A testing is performed as part of another test (e.g., post-burn in, final electrical acceptance), the group
A tests need not be duplicated as long as the test sequence is: Group A tests - latchup testing - group A tests.
3.5.2 Production test sequence.
CAUTION: Exercise caution when handling devices, particularly with regard to pin alignment in the carriers and
holding fixture and when attaching devices to the test circuit. Insure that bias voltages are off before
attachment. Observe ESD handling procedures for the class of devices being tested.
The latchup test system, including test circuitry, cables, monitoring, and recording equipment, shall be assembled to
provide the specified biasing and output monitoring. Place the DUT in position for the specified dose; ensure that the
system is functioning as follows:
Step 1: Apply and verify the bias voltages at the interface fixture with the device removed.
Step 2: Adjust timing control system to provide the required time interval between radiation pulse and post-
irradiation measurements.
Step 3: Remove bias voltages and install a control sample device (identical to devices to be tested).
Step 4: Turn on bias voltages and verify proper device function in accordance with performance requirements.
Step 5: Verify proper operation of all recording, monitoring, and timing control equipment.
Step 6: Remove bias voltages and control device, in that order.
METHOD 1020.1
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MIL-STD-883-1
Adjust the radiation source to operate in the specified mode to deliver the specified dose. Verify as follows:
Step 7: Put dosimetry in position and expose to radiation pulse. Verify that the dose recording equipment is
working properly and that the appropriate dose was delivered.
When the latchup test system, radiation source, and dosimetry system have been verified to be working properly,
continue as follows for each device type to be tested:
3.5.2.1 Combinational logic. Latchup tests for combinational logic circuits shall be performed as follows:
Step 8: Install the DUT in the proper position in front of the radiation source, and bring the device to test
temperature.
Step 9: Bias the device in accordance with the test plan or procedure and verify proper device functional
operation.
Step 10: Load the specified test pattern and verify correct output conditions.
Step 11: Irradiate the device (maintaining above input condition) and record the dose and parameters required
by the test plan or procedure.
Step 12: To verify recovery time, measure the DUT supply current at the specified time after the radiation
pulse. Verify that the supply current and output voltages have returned to within the specified limits.
Step 13: Perform another functional test and determine if the device passes.
Step 14: Put the device in complement state and repeat steps 10-13. (The number of states in which the
device is to be tested shall be specified in the test plan or procedure.)
Step 15: Remove bias voltages and device, in that order.
A combinational device fails the latchup test if the output after the recovery time is not in the proper state, it fails the
post-irradiation in-situ functional test, or if the supply current does not return to within specified limits within the
specified time after irradiation.
3.5.2.2 Sequential logic. Latchup tests for sequential logic circuits shall be performed as follows:
Step 8: Install the DUT in the proper position in front of the radiation source, and bring the device to test
temperature.
operation.
Step 10: Load the specified test pattern and verify correct output conditions.
Step 11: Irradiate the device (maintaining above input condition) and record the dose and parameters required
by the test plan or procedure.
Step 12: To verify recovery time, measure the DUT supply current at the specified time after the radiation
pulse. Verify that the supply current and output voltages have returned to within the specified limits.
Step 13: Perform functional test to determine if the device passes.
METHOD 1020.1
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MIL-STD-883-1
Step 14: Change the conditions of the initial output to the complement state and repeat steps 10-13. (The
number of states in which the device is to be tested shall be specified in the test plan or procedure.)
Step 15: Remove bias voltages and device, in that order.
In sequential logic devices, the radiation pulse can cause logic state changes at the output as well as within internal
storage registers. Therefore, the post-radiation verification of recovery must be determined from a combination of
device supply current and post-exposure functional test results. A sequential logic device fails the latchup test if the
supply current does not return to within specified limits within the specified recovery period or if it fails the functional
test requirements. The specified supply current limits must take into account changes in the supply current that may
result from changes in the internal logic state and internal registers.
3.5.2.3 Linear devices. Latchup testing for linear devices is inherently device and application specific because of
the large number of types of linear circuits and application conditions. Latchup in linear devices is detected through a
combination of monitoring the device supply current, monitoring of the output waveform, and in-situ functional tests.
The minimum number of monitored outputs shall be as specified in the test plan or procedure, but the in-situ
functional test shall exercise all outputs. The transient response of the device output is monitored through the use of
an oscilloscope with a camera, or a transient digitizer. An example is shown on figure 1020-2. Trace A shows a
device output which operated properly after the radiation pulse, and trace B shows an output that failed. Note that
the device will not respond properly to the oscillating input after the radiation exposure. Testing of linear devices is
performed as follows:
Step 8: Install the DUT in the proper position in front of the radiation source, and bring the device up to test
temperature.
operation.
Step 10: Adjust input signal as specified in the test plan or procedure and verify correct output level.
Step 11: Irradiate the device and record the dose. Monitor the supply current and output voltages during and
after the pulse, and measure the recovery times of the supply current and the output voltages.
Monitor the waveform of the output.
Step 12: After the recovery period, determine if the device supply currents have returned to within the specified
limits.
Step 13: Determine if the output voltages have returned to within specified limits in the specified recovery time.
Ensure device responds properly to input commands, and compare pre-rad and post-rad waveforms.
Step 14: Change the conditions of the input as specified in the test plan or procedure and repeat steps 10-13.
(The number of conditions in which the device is to be tested shall be specified in the test plan or
procedure.)
Step 15: Remove the bias voltages and device, in that order.
A linear device fails the latchup test if the supply current or the output signals (or voltages) do not recover within the
recovery period specified in the test plan, or if the outputs do not respond properly to an input signal.
METHOD 1020.1
15 November 1991
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MIL-STD-883-1
3.5.2.4 Other device types. For other types of microcircuits, such as LSI/VLSI and greater complexity circuits and
hybrid microcircuits, the worst case bias conditions, exposure states, outputs to be monitored, necessary post-
irradiation testing, and failure criteria are determined through a combination of characterization testing and analysis.
These requirements are specified in the test plan or procedure for each device. Depending on the circuit type, the
device is tested as described in 3.5.2.1 to 3.5.2.3.
4. REPORT. A latchup test report shall be prepared in which the devices tested are identified by device type,
manufacturer, date code, and lot/wafer identification. The report shall list by device serial number, pass/fail status of
each device and the doses (or dose range) delivered to each device in each radiation pulse. The test plan and
procedure shall either be appended to the test report or referenced in the test report.
a. Device types and quantities to be tested.
b. Temperature of test (see 2.3.6).
c. Traceability (device number, wafer/lot number, etc.) requirements and requirements for data reporting and
submission.
d. The maximum allowable recovery period.
e. Radiation pulse width and radiation dose per pulse.
f. Total dose limit for each device type.
g. Requirements for group A electrical testing pre- and post-latchup testing.
h. Test instrument requirements, if other than those indicated above.
i. Requirements for characterization, recharacterization, and analysis.
j. Minimum dc power supply current required, or value of current limiting resistor, if allowed.
METHOD 1020.1
15 November 1991
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MIL-STD-883-1
FIGURE 1020-1. Latchup system.
METHOD 1020.1
15 November 1991
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MIL-STD-883-1
FIGURE 1020-2. Linear device latchup screen test photograph (50 µs/div).
METHOD 1020.1
15 November 1991
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MIL-STD-883-1
METHOD 1021.3
DOSE RATE UPSET TESTING OF DIGITAL MICROCIRCUITS
1. PURPOSE. This test procedure defines the requirements for testing the response of packaged digital integrated
circuits to pulsed ionizing radiation. A flash x-ray or linear accelerator is used as a source of pulses of ionizing
radiation. The response may include transient output signals, changes in the state of internal storage elements, and
transient current surges at inputs, outputs, and power supply connections. The dose rate at which logic or change-of-
state errors first occur is of particular interest in many applications.
1.1 Definitions. Definitions of terms used in this procedure are given below:
a. Dose rate threshold for upset. The dose rate which causes either:
(1) A transient output upset for which the change in output voltage of an operating digital integrated circuit
goes either above or below (as appropriate) specified logic levels (see 3.2 on transient voltage
criteria), and the circuit spontaneously recovers to its preirradiation condition after the radiation pulse
subsides, or
(2) A stored data or logic state upset for which there is a change in the state of one or more internal
memory or logic elements that does not recover spontaneously after the radiation pulse. However,
the circuit can be restored to its preirradiation condition by applying the same sequence of logic
signals to its inputs that were previously used to establish the preirradiation condition, or
(3) A dynamic upset which results in a change in the expected output or stored test pattern of a device
that is functionally operating during the time it is irradiated. The upset response may depend on the
precise time relationship between the radiation pulse and the operating cycle of the device. For
operations requiring many clock signals, it may be necessary to use a wide radiation pulse.
b. Dose rate. Energy absorbed per unit time per unit mass by a given material from the radiation field to which
it is exposed.
c. Combinational logic circuit. A digital logic circuit with the property that its output state is solely determined
by the logic signals at its inputs. Combinational logic circuits contain no internal storage elements.
Examples of combinational circuits include gates, multiplexers, and decoders.
d. Sequential logic circuit. A digital logic circuit with the property that its output state at a given time depends
on the sequence and time relationship of logic signals that were previously applied to its inputs. Sequential
logic circuits contain internal storage elements. Examples of sequential logic circuits include memories,
shift registers, counters, and flip-flops.
e. State vector. A state vector completely specifies the logic condition of all elements within a logic circuit.
For combinational circuits the state vector includes the logic signals that are applied to all inputs; for
sequential circuits the state vector must also include the sequence and time relationship of all input signals
(this may include many clock cycles).
METHOD 1021.3
26 February 2010
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MIL-STD-883-1
1.2 Interferences. There are several interferences that need to be considered when this test procedure is applied.
These include:
a. Total dose damage. Devices may be permanently damaged by total dose. This limits the number of
radiation pulses that can be applied during transient upset testing. The total dose sensitivity depends on
fabrication techniques and device technology. MOS devices are especially sensitive to total dose damage.
Newer bipolar devices with oxide-isolated sidewalls may also be affected by low levels of total dose. The
maximum total dose to which devices are exposed must not exceed 20 percent of the typical total dose
failure level of the specific part type.
b. Steps between successive radiation levels. The size of the steps between successive radiation levels limits
the accuracy with which the dose rate upset threshold is determined. Cost considerations and total dose
damage limit the number of radiation levels that can be used to test a particular device.
c. Latchup. Some types of integrated circuits may be driven into a latchup condition by transient radiation. If
latchup occurs, the device will not function properly until power is temporarily removed and reapplied.
Permanent damage may also occur, primarily due to the large amount of localized heating that results.
Although latchup is an important transient response mechanism, this procedure does not apply to devices
in which latchup occurs. Functional testing after irradiation is required to detect internal changes of state,
and this will also detect latchup. However, if latchup occurs it will usually not be possible to restore normal
operation without first interrupting the power supply.
d. Limited number of state vectors. Cost, testing time, and total dose damage usually make it necessary to
restrict upset testing to a small number of state vectors. These state vectors must include the most
sensitive conditions in order to avoid misleading results. An analysis is required to select the state vectors
used for radiation testing to make sure that circuit and geometrical factors that affect the upset response
are taken into account (see 3.1).
2. APPARATUS. Before testing can be done, the state vectors must be selected for radiation testing. This
requires a logic diagram of the test device. The apparatus used for testing shall consist of the radiation source,
dosimetry equipment, a test circuit board, line drivers, cables, and electrical test instrumentation to measure the
transient response, provide bias, and perform functional tests. Adequate precautions shall be observed to obtain an
electrical measurement system with ample shielding, satisfactory grounding, and low noise from electrical
interference or from the radiation environment.
2.1 Radiation source. The radiation source used in this test shall be either a flash x-ray machine (FXR) used in the
photon mode or a linear accelerator (LINAC) used in the electron beam mode. The LINAC beam energy shall be
greater than 10 MeV. The radiation source shall provide a uniform (within 20 percent) radiation level across the area
where the device and the dosimeter will be placed. The radiation pulse width for narrow pulse measurements shall
be between 10 and 50 ns. For narrow pulse measurements either a LINAC or FXR may be used. Wide pulse
measurements (typically 1 - 10 s) shall be performed with a LINAC. The pulse width for LINAC irradiations shall be
specified. The dose rate at the location of the device under test shall be adjustable between 106 and 1012 rads(Si)/s
(or as required) for narrow pulse measurements and between 105 and 1011 rads(Si)/s (or as required) for wide pulse
measurements. Unless otherwise specified, a test device exposed to a total dose that exceeds 20 percent of the total
dose failure level shall be considered as destructively tested and shall be removed from the lot (see 1.2a).
2.2 Dosimetry equipment. Dosimetry equipment must include a system for measuring total dose, such as a
thermoluminescent dosimeter (TLD) or calorimeter, a pulse shape monitor, and an active dosimeter that allows the
dose rate to be determined from electronic measurements, e.g., a p-i-n detector, Faraday cup, secondary emission
monitor, or current transformer.
METHOD 1021.3
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2.3 Test circuit. The test circuit shall contain the device under test, wiring, and auxiliary components as required.
It shall allow for the application of power and bias voltages or pulses at the device inputs to establish the state vector.
Power supply stiffening capacitors shall be included which keep the power supply voltage from changing more than
10 percent of its specified value during and after the radiation pulse. They should be placed as close to the device
under test as possible, but should not be exposed to the direct radiation beam. Provision shall be made for
monitoring specified outputs. Capacitive loading of the test circuit must be sufficiently low to avoid interference with
the measurement of short-duration transient signals. Generally a line driver is required at device outputs to reduce
capacitive loading. Line drivers must have sufficient risetime, linearity, and dynamic range to drive terminated cables
with the full output logic level. The test circuit shall not affect the measured output response over the range of
expected dose rates and shall not exhibit permanent changes in electrical characteristics at the expected
accumulated doses. It must be shielded from the radiation to a sufficient level to meet these criteria.
Test circuit materials and components shall not cause attenuation or scattering which will perturb the uniformity of the
beam at the test device position (see 2.1 for uniformity). The device under test shall be oriented so that its surface is
perpendicular to the radiation beam.
2.4 Cabling. Cabling shall be provided to connect the test circuit board, located in the radiation field, to the test
instrumentation located in the instrumentation area. Coaxial cables, terminated in their characteristic impedance,
shall be used for all input and output signals. Double shielded cables, triax, zipper tubing or other additional shielding
may be required to reduce noise to acceptable levels.
2.5 Transient signal measurement. Oscilloscopes or transient digitizers are required to measure transient output
voltages, the power supply current and the dosimeter outputs. The risetime of the measuring instrumentation shall be
less than 10 ns for pulse widths greater than 33 ns or less than 30 percent of the radiation pulse width for pulse
widths less than 33 ns.
2.6 Functional testing. Equipment is also required for functional testing of devices immediately after the radiation
pulse in the radiation test fixture. This equipment must contain sources to drive inputs with specified patterns, and
comparison circuitry to determine that the correct output patterns result. This equipment may consist of logic
analyzers, custom circuitry, or commercial integrated circuit test systems. However, it must be capable of functioning
through long cables, and must also be compatible with the line drivers used at the outputs of the device in the test
circuit.
2.7 General purpose test equipment. Power supplies, voltmeters, pulse generators, and other basic test
equipment that is required for testing is general purpose test equipment. This equipment must be capable of meeting
the test requirements and should be periodically calibrated in accordance with ANSI/NCSL Z540.3 or equivalent.
METHOD 1021.3
26 February 2010
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MIL-STD-883-1
3. PROCEDURE. An outline of the procedure is as follows: a) determine the state vectors (or sequence of test
vectors for a dynamic test) in which the device will be irradiated; b) following the test plan, set up the test fixture,
functional test equipment, and transient measurement equipment; c) set up and calibrate the radiation source; d)
perform a noise check on the instrumentation; and e) test devices at a sequence of radiation pulses, determining the
transient response at specified dose rates. The dose rate upset level can be determined by measuring the transient
response at several dose rates, using successive approximation to determine the radiation level for dose rate upset.
3.1 State vector selection. Two approaches can be used to select the state vectors in which a device is to be
irradiated:
a. Multiple output logic states. Partition the circuit into functional blocks. Determine the logic path for each
output, and identify similar internal functions. For example, a 4-bit counter can be separated into control,
internal flip-flop, and output logic cells. Four identical logic paths exist, corresponding to each of the four
bits. Determine the total number of unique output logic state combinations, and test the circuit in each of
these states. For the counter example this results in 16 combinations so that the upset must be determined
for each of these 16 state vectors.
b. Topological analysis approach. If a photomicrograph of the circuit is available, the number of required
states can be reduced by examining the topology of the internal circuits. This allows one to eliminate the
need to test paths with the same output state which have identical internal geometries. For the counter, this
reduces the required number of states to two. This approach is recommended for more complex circuits
where the multiple output logic approach results in too many required state vectors.
3.2 Transient output upset criteria. The transients that are permitted at logic outputs depend on the way that the
system application allocates the noise margin of digital devices. Most systems use worst-case design criteria which
are not directly applicable to sample testing because the samples represent typical, not worst-case parts, and have
higher noise margins. For example, although the logic swing of TTL logic devices is typically greater than 2 volts, the
worst-case noise margin is specified at 400 mV. In a typical system, much of this noise margin will be required for
aberrations and electrical noise, leaving only part of it, 100 mV to 200 mV, for radiation-induced transients. Thus, the
allowable voltage transient is far lower than the typical logic signal range. Loading conditions also have a large effect
on output transients.
However, transient upset testing is usually done at a fixed temperature under conditions that are more typical than
they are worst-case. Thus, the noise margin during testing is much greater. The recommended default condition if
not specified by the system is a transient voltage exceeding 1 V for CMOS or TTL logic devices with 5 V (nominal)
power supply voltage, and 30 percent of the room-temperature logic level swing for other technologies such as ECL,
open collector devices, or applications with other power supply voltages. Default loading conditions are minimum
supply voltage and maximum fanout (maximum loading).
The time duration of transient upset signals is also important. If the duration of the transient voltage change is less
than the minimum value required for other circuits to respond to it, the transient signal shall not be considered an
upset. The minimum time duration shall be one-half the minimum propagation delay time of basic gate circuits from
the circuit technology that is being tested.
Testing criteria may also be established for other parameters, such as the power supply current surge. Output
current is also important for tri-state or uncommitted ("open-collector") circuits. These criteria must be specified by
the test plan, and are normally based on particular system requirements.
METHOD 1021.3
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MIL-STD-883-1
3.3 Test plan. The test plan must include the following:
a. Criteria for transient voltage upset, output current, and power supply current, as applicable.
b. Power supply and operating frequency requirements.
c. Loading conditions at the outputs.
d. Input voltage conditions and source impedance.
e. Functional test approach, including dynamic upset, if applicable.
f. Radiation pulse width(s).
g. Sequence used to adjust the dose rate in order to determine the upset threshold by successive
approximation.
h. State vectors used for testing (determined from 3.1).
i. Radiation levels to be used for transient response measurements, if applicable.
j. A recommended radiation level at which to begin the test sequence for transient upset measurements, if
applicable.
k. The temperature of the devices during testing (usually 25°C ±5°C).
3.4 Test circuit preparation. The test circuit shall be assembled including a test circuit board, line drivers, electrical
instruments, functional test equipment, transient measurement equipment, and cables to provide the required input
biasing, output monitoring, and loading.
3.5 Facility preparation. The radiation source shall be adjusted to operate in the specified mode and provide a
radiation pulse width within the specified width range. The required dosimeters shall be installed as close as practical
to the device under test. If special equipment is needed to control the temperature to the value specified in the test
plan, this equipment must be assembled and adjusted to meet this requirement.
3.6 Safety requirements. The health and safety requirements established by the local Radiation Safety Officer or
Health Physicist shall be observed.
3.7 Test circuit noise check. With all circuitry connected, a noise check shall be made. This may be done by
inserting a resistor circuit in place of the test device. Resistor values chosen shall approximate the active resistance
of the device under test. A typical radiation pulse shall be applied while the specified outputs are monitored. If any of
the measured transient voltages are greater than 10 percent of the expected parameter response, the test circuit is
unacceptable and shall not be used without modification to reduce noise.
3.8 Bias and load conditions. Unless otherwise specified, the power supply shall be at the minimum allowed value.
Input bias levels shall be at worst-case logic levels. Outputs shall be loaded with the maximum load conditions in
both logic states (usually equivalent to maximum circuit fanout).
3.9 Temperature. The temperature of the devices during test should be measured with an accuracy of ±5°C
unless higher accuracy is required in the test plan.
METHOD 1021.3
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MIL-STD-883-1
3.10 Procedure for dose rate upset testing. The device to be tested shall be placed in the test socket. The
required pulse sequence shall be applied so that the device is in the state specified by the first of the state vectors in
3.1.
a. Set the intensity of the radiation source to the first radiation test level specified in the test plan. Expose the
device to a pulse of radiation, and measure the transient output responses and power supply current
transient. For sequential logic circuits, perform a dynamic functional test to see if changes occurred in
internal logic states.
b. Repeat 3.10a for all other state vectors and radiation levels specified in the test plan.
3.11 Radiation exposure and test sequence for upset threshold testing. The device to be tested shall be placed in
the test socket. The required pulse sequence shall be applied so that the device is in the state specified by the first of
the state vectors determined in 3.1, or is operating with the specified test vector sequence for dynamic upset.
a. Set the intensity of the radiation source to the initial level recommended in the test plan, and expose the
device to a pulse of radiation. Determine whether a stored data upset, logic state upset, or dynamic upset
occurs, as appropriate.
b. If no upset occurred, increase the radiation level according to the sequence specified in the test plan; if an
upset is observed decrease the radiation level. After the radiation source is adjusted to the new intensity,
reinitialize the part to the required state vector, expose it to an additional pulse, and determine whether or
not upset occurred. Continue this sequence until the upset response threshold level is bracketed with the
resolution required in the test plan.
c. The power supply peak transient current shall be monitored and recorded during radiation testing unless it
is not required by the test plan.
d. Repeat test sequences 3.11a through 3.11c for all of the state vectors.
METHOD 1021.3
26 February 2010
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MIL-STD-883-1
3.12 Report. As a minimum the report shall include the following:
a. Device identification.
b. Test date and test operator.
c. Test facility, radiation source specifications, and radiation pulse width.
d. Bias conditions, output loading, and test circuit.
e. Description of the way in which state vectors for testing were selected.
f. State vectors used for radiation testing and functional test conditions for each state vector.
g. Criteria for transient output upset.
h. Records of the upset threshold and power supply current for each state vector.
i. Equipment list.
j. Results of the noise test.
k. Temperature (see 3.9).
4. SUMMARY. The following details shall be specified.
a. Device type and quantity to be tested.
b. Test circuit to be used, including output loading impedance.
c. State vectors to be used in testing and device output pins to be monitored.
d. Functional test sequence.
e. Power supply voltage and bias conditions for all pins.
f. Pulse width of the radiation source (see 2.1).
g. The method of selecting steps between successive irradiation levels and the required resolution.
h. Restrictions on ionizing (total) dose if other than that specified in 3.1.
i. Temperature of the devices during testing.
j. Requirement for measuring and recording power supply peak transient current (see 3.11c).
k. Failure criteria for transient output voltage upset.
l. Failure criteria for power supply current and output current, if applicable.
METHOD 1021.3
26 February 2010
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MIL-STD-883-1
METHOD 1021.3
26 February 2010
8
MIL-STD-883-1
METHOD 1022
MOSFET THRESHOLD VOLTAGE
1. PURPOSE. This method establishes the means for measuring MOSFET threshold voltage. This method
applies to both enhancement-mode and depletion-mode MOSFETs, and for both silicon on sapphire (SOS) and
bulk-silicon MOSFETs. It is for use primarily in evaluating the response of MOSFETs to ionizing radiation, and for
this reason the test differs from conventional methods for measuring threshold voltage.
1.1 Definition.
1.1.1 MOSFET threshold voltage, VTH. The gate-to-source voltage at which the drain current is reduced to the
leakage current, as determined by this method.
2. APPARATUS. The apparatus shall consist of a suitable ammeter, voltmeters, and voltage sources. The
apparatus may be manually adjusted or, alternatively, may be digitally programmed or controlled by a computer.
Such alternative arrangements shall be capable of the same accuracy as specified below for manually adjusted
apparatus.
2.1 Ammeter (A1). The ammeter shall be capable of measuring current in the range specified with a full scale
accuracy of ±0.5 percent or better.
2.2 Voltmeters (V1 and V2). The voltmeters shall have an input impedance of 10 M or greater and have a
capability of measuring 0 to 20 V with a full scale accuracy of ±0.5 percent or better.
2.3 Voltage sources (VS1 and VS2). The voltage sources shall be adjustable over a nominal range of 0 to 20 V,
have a capability of supplying output currents at least equal to the maximum rated drain current of the device to be
tested, and have noise and ripple outputs less than 0.5 percent of the output voltage.
3. PROCEDURE.
NOTE: The absolute maximum values of power dissipation, drain voltage, drain current, or gate voltage specified in
either the applicable acquisition document or the manufacturer's specifications shall not be exceeded under
any circumstances.
3.1 N-channel devices.
3.1.1 Test circuit. The test circuit shown on figure 1022-1 shall be assembled and the apparatus turned on. With
the voltage sources VS1 and VS2 set to 0 volts, the MOSFET to be tested shall be inserted into the test circuit. The
gate polarity switch shall be set to the appropriate position, and voltage source VS1 shall be set 1.0 V negative with
respect to the anticipated value of threshold voltage VTH. Voltage source VS2 shall be adjusted until voltmeter V2
indicates the specified drain voltage VD. The current ID, indicated by ammeter A1, and the gate voltage VG, indicated
by voltmeter V1, shall be measured and recorded.
3.1.2 Measurement of gate voltages. The measurement shall be repeated at gate voltages which are successively
0.25 volts more positive until either the maximum gate voltage or maximum drain current is reached. If the gate
voltage reaches 0 volts before either of these limits has been reached, the gate polarity switch shall be changed as
necessary and measurements shall continue to be made at gate voltages which are successively 0.25 volts more
positive until one of these limits has been reached.
METHOD 1022
4 November 1980
1
MIL-STD-883-1
3.2 p-channel devices.
3.2.1 Test circuit. The test circuit shown on figure 1022-2 shall be assembled and the apparatus turned on. With
the voltage sources VS1 and VS2 set to 0 volts, the MOSFET to be tested shall be inserted into the test circuit. The
gate polarity switch shall be set to the appropriate position, and voltage source VS1 shall be set 1.0 V positive with
respect to the anticipated value of threshold voltage VTH. Voltage source VS2 shall be adjusted until voltmeter V2
indicates the specified drain voltage VD. The current ID, indicated by ammeter A1, and the gate voltage VG, indicated
by voltmeter V1, shall be measured and recorded.
3.2.2 Measurement of gate voltages. The measurement shall be repeated at gate voltages which are successively
0.25 volts more negative until either the maximum gate voltage or maximum drain current is reached. If the gate
voltage reaches 0 volts before either of these limits has been reached, the gate polarity switch shall be changed as
necessary and measurements shall continue to be made at gate voltages which are successively 0.25 volts more
negative until one of these limits has been reached.
3.3 Leakage current. The leakage current shall be measured.
3.3.1 Drain voltage. The drain voltage shall be the value specified in 4b.
3.3.2 Gate voltage. The gate voltage shall be five volts different from the anticipated threshold voltage in the
direction of reduced drain current.
3.4 Plot of gate voltage. The gate voltage, VG, shall be plotted versus the square-root of the drain
current minus the leakage current, √ ID - IL. At the point of maximum slope, a straight line shall be extrapolated
downward. The threshold voltage VTH is the intersection of this line with the gate voltage axis. Examples are shown
on figure 1022-3.
3.5 Report. As a minimum, the report shall include the device identification, the test date, the test operator, the
test temperature, the drain voltage, the range of gate voltage, the leakage current, and the threshold voltage.
a. Test temperature. Unless otherwise specified, the test shall be performed at ambient.
b. Drain voltage.
c. Maximum drain current.
d. Range of gate voltage.
METHOD 1022
4 November 1980
2
MIL-STD-883-1
NOTES: Gate polarity switch set at A for enhancement mode, B for depletion mode.
FIGURE 1022-1. Test circuit for n-channel MOSFETs.
NOTE: Gate polarity switch set at A for enhancement mode, B for depletion mode.
FIGURE 1022-2. Test circuit for p-channel MOSFETs.
METHOD 1022
4 November 1980
3
MIL-STD-883-1
FIGURE 1022-3. Examples of curves.
METHOD 1022
4 November 1980
4
MIL-STD-883-1
METHOD 1023.3
Dose Rate Response and Threshold for Upset

of Linear Microcircuits
1. PURPOSE. This test procedure defines the requirements for measuring the dose rate response and upset
threshold of packaged devices containing analog functions when exposed to radiation from a flash X-ray source or
from a linear accelerator. This procedure addresses the measurement of dose rate response characteristics of a
linear circuit, excluding latchup which is addressed in MIL-STD-883 Test Method 1020.
1.1 Definitions. The following are the definitions of terms used in this method:
a. Dose rate response. The transient changes which occur in the operating parameters or in the output signal
of an operating linear microcircuit when exposed to a pulse of ionizing radiation.
b. Dose rate. Energy absorbed per unit time and per unit mass by a given material from the radiation field to
which it is exposed. Units are specified in Gray (Gy) per second (s) in the material of interest, e.g.,
Gy(Si)/s, Gy(SiO2)/s, Gy(GaAs)/s, etc.
c. Dose rate induced upset. An upset has occurred when the radiation induced transient change in a
specified parameter (e.g., in output voltage, supply current, output signal waveform) exceeds a
predetermined level.
d. Upset threshold. The upset threshold is the minimum dose rate at which the device upsets. However, the
reported measured upset threshold shall be the maximum dose rate at which the device does not upset and
which the transient disturbance of the output waveform and/or supply current remains within the specified
limits.
METHOD 1023.3
26 February 2010
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MIL-STD-883-1
1.2 Test plan. Prior to dose rate testing, a test plan shall be prepared which describes the radiation source, the
dosimetry techniques, test equipment, the device to be tested, test conditions, and any unique testing considerations.
A detailed procedure for each device type to be tested shall be prepared, either as part of the test plan, or in separate
test procedure documents. The procedure shall include bias conditions, test sequence, schematics of the test setup
and specific functions to be tested. The test plan shall be approved by the acquiring activity, and as a minimum, the
items listed below shall be provided in the test plan or procedure:
a. Device types, including package types, manufacturer, date codes, and quantities to be tested.
b. Traceability requirements, such as requirements for serialization, wafer or lot traceability, etc.
c. Requirements for data reporting and submission.
d. Block diagram or schematic representation of test set up.
e. List of equipment used in the testing and calibration compliance requirements as required.
f. Test conditions, e.g., bias voltage, temperature, etc.
g. Electrical parameters to be monitored and device operating conditions, including functional test
requirements before, during and after the radiation pulse. Test patterns to be used for devices with storage
elements, or devices with input pattern sensitivity shall also be specified.
h. Group A electrical test requirements for pre- and post-dose rate testing, when applicable, to include test
limits and failure criteria.
i. Radiation test parameters such as pulse width(s), radiation dose(s) per pulse and dose rate range(s).
j. Total ionizing dose limit acceptable for each device type.
k. Upset and failure criteria, e.g., effective number of bits (ENOB) or missing codes in analog to digital
converters (ADCs), delta VOH or Vref, time to recovery, output waveform distortion in shape or frequency,
etc.
METHOD 1023.3
26 February 2010
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MIL-STD-883-1
1.3 Formulation of the upset criteria. The upset criteria are usually generated from characterization data at the
dose rate of interest. Upset criteria can sometimes be determined by analysis/simulation (SPICE or equivalent
computer code) of the application circuit, if the code has been verified to agree with experimental data for similar
circuits and exposure conditions.
1.4 Specification of the upset criteria. Once formulated, the upset criteria shall be specified in the detailed
specification. The upset criteria may consist of the following (a waveform may be included denoting the acceptable
boundaries):
a. Measurement circuit to which criteria apply.
b. Peak amplitude of tolerable transient change in output voltage.
c. Allowable duration of transient output change (recovery time).
d. Limiting value for the surge in power supply current and recovery characteristics.
e. Steady state (return to normalcy) level of the output voltage following recovery.
f. ENOB or missing codes for ADCs.
g. Delta parameters such as Vref or VOH.
h. Device saturation time.
2. APPARATUS. The apparatus shall consist of the radiation source, dosimetry equipment, remote test circuit to
include signal recording devices, cabling, line drivers, interconnect fixture, and exposure board. Adequate
precautions shall be observed to obtain an electrical measurement system with sufficient insulation, ample shielding,
satisfactory grounding and low noise from electrical interference or from the radiation environment (see section
3.7.3).
2.1 Radiation Source. Either of two radiation sources shall be used for dose rate testing: 1) a flash x-ray machine
(FXR), or 2) an electron linear accelerator (LINAC). The FXR shall be used in the x-ray mode and the LINAC in the
electron (e-beam) mode. Unless otherwise specified, the FXR peak charging voltage shall be 2 MV or greater, and
the LINAC beam energy shall be 10 MeV or greater. The uniformity of the radiation field in the device irradiation
volume shall be + 15% as measured by the dosimetry system. The dose per radiation exposure shall be as specified
in the test plan or procedure.
2.2 Dosimetry System. A dosimetry system shall be used which provides a measurement accuracy within + 15
percent. A calibrated PIN diode may be used to obtain both the shape of the radiation pulse and the dose. The
following American Society for Testing and Materials (ASTM) standards or their equivalent may be used:
ASTM F 526 Standard Method for Measuring Dose for Use in Linear Accelerator Pulsed Radiation Effects Tests.
ASTM E 666 Standard Method for Calculation of Absorbed Dose from Gamma or X Radiation.
ASTM E 668 Standard Practice for the Application of Thermo-luminescence Dosimetry (TLD) Systems for
Determining Absorbed Dose in Radiation Hardness Testing of Electronic Devices.
These methods describe techniques to determine the absorbed dose in the material of interest. Device packaging
material and thickness should be considered in determining the dose to the DUT. For FXR tests, dose enhancement
effects of the package shall be considered. Dosimetry techniques shall be reported in the test report as well as
device packaging material, thickness and dose enhancement effects, if applicable.
METHOD 1023.3
26 February 2010
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MIL-STD-883-1
2.3 Dose Rate Test System. The instrumentation shall be capable of establishing the required test conditions and
measuring and recording the required parameters in the specified time frame. Components other than the device
under test (DUT) shall be insensitive to the expected radiation levels, or they shall be shielded from the radiation.
The system used for dose rate testing shall contain the following elements:
2.3.1 Remote Test circuit. The remote portion of the test circuit includes power sources, input and control signal
generators, instrumentation for detecting, measuring and recording transient and steady state response, and may
also include automated test equipment (ATE). The remote portion of the test equipment is shielded from radiation
and from radiation induced electromagnetic fields. Specified signals shall be measured and recorded during the
radiation pulse, and the logic pattern shall be verified after the pulse (when applicable).
2.3.2 Interconnect fixture. The interconnecting fixture is located in the radiation exposure chamber and is
connected to the remote portion of the test circuit via the cabling system. It serves as a power and signal distribution
box and contains the line drivers that buffer the various DUT output signals. The characteristics of the line drivers
(e.g., linearity, dynamic range, input capacitance, transient response and radiation response) shall be such that they
accurately represent the response of the DUT output. The interconnect fixture shall be located as close as practical
to the exposure fixture, and must be appropriately shielded against scattered radiation fields so that radiation induced
effects do not adversely affect the fidelity of the output response being measured.
2.3.3 Test circuit. The test circuit for each device type shall provide worst case bias and load conditions for the
DUT, and shall enable in-situ functional testing of the DUT as specified in the test plan or procedure. The test circuit
accommodates the DUT, output loads, and the supply stiffening capacitors connected directly to the DUT supply pins
or its socket (see 2.3.4). To avoid ground loops, there shall be only one ground plane (or ground rings connected to
a single ground) on the test circuit. Test Circuit parasitic resistance shall be kept to a minimum.
2.3.4 Stiffening capacitors. A high frequency capacitor shall be placed at each bias supply pin of the DUT with
lead lengths as short as practicable. These capacitors should be large enough such that the power supply voltage
drop at the DUT is less than 10% during the radiation pulse (typical values are between 4.7 and 10 µF). In parallel
with this capacitor should be a low inductance capacitor (e.g., 0.1 µF), again as close as possible to the supply pin
and with lead lengths as short as practical. In addition, for each supply line into the DUT, a larger capacitor, > 100
µF, may be placed a short distance away from the DUT and shielded from radiation.
2.3.5 Current Limiting Series resistor. A current limiting resistor in series with the power supply may only be used
with prior approval of the acquiring activity. Note that a current limiting resistor may degrade the upset performance
of the DUT.
2.3.6 Timing control. A timing control system shall be incorporated into the test system such that post-irradiation
in-situ functional testing is performed at the specified time, and that recovery of the signal and supply current can be
monitored.
2.4 Cabling. The remote test circuit shall be connected to the interconnect and exposure fixtures by means of
shielded cables terminated in their characteristic impedance. Additional shielding provisions (e.g., doubly shielded
cables, triax, zipper tubing, aluminum foil) may be required to reduce noise to acceptable levels.
2.5 Measuring and recording equipment. Oscilloscopes or transient waveform digitizers shall be used to measure
and record the transient signal and the recovery period of the output voltage and supply current. The rise time of
these instruments shall be such that they are capable of accurately responding to the expected pulse width(s).
3. PROCEDURE.
3.1 Device identification. In all cases, devices shall be serialized, and the applicable recorded test data shall be
traceable to each individual device.
METHOD 1023.3
26 February 2010
4
MIL-STD-883-1
3.2 Radiation safety. All personnel shall adhere to the health and safety requirements established by the local
radiation safety officer or health physicist.
3.3 Stress limits.
3.3.1 Total ionizing dose limit. Unless otherwise specified, any device exposed to more than 10% of its total
ionizing dose limit shall be considered to have been destructively tested. The total dose limit shall be determined (or
data obtained) for each device type to be tested. The total ionizing dose limit shall be specified in the test plan.
3.3.2 Burnout Limit. A device exposed to greater than 10% of the level at which photocurrent burnout occurs shall
be considered destructively tested. The burnout level shall be specified in the test plan/procedure. The burnout level
may be specified as the maximum dose rate level at which the device type has been tested and does not burnout.
Note that dose rate testing causes surge currents ranging from 20 ns to 500 ns (typically) in duration, which may
exceed the manufacturers' maximum ratings for current and power for that time period.
3.4 Characterization testing. Characterization tests shall be performed or data obtained to determine device
performance as a function of dose rate and to establish requirements for production testing, if applicable. The
following are examples of information gained from characterization testing:
a. Parameter behavior over dose rate and pulse width.
b. Upset threshold as a function of radiation dose rate and pulse width.
c. Determination of susceptible circuit conditions.
d. Identification of the most susceptible circuits of a device, and the appropriate outputs to monitor.
e. Effect of temperature on upset or failure.
f. Upset, recovery time and failure criteria to be specified in the device specification or drawing.
g. Group A electrical parameter degradation subsequent to dose rate testing.
h. Worst case power supply voltage.
i. Maximum surge currents and duration, and photocurrent burnout level.
3.5 Production testing. Prior to production testing, characterization testing shall be performed or characterization
data obtained for each device type. The results of the characterization tests (paragraph 3.4), or the existing data, will
be used to develop the requirements for the production tests. These requirements are specified in the applicable test
plan or procedure and include those items listed in paragraph 1.2.
3.5.1 General requirements for production tests. Production tests shall be performed at the specified dose rates
(and pulse widths), with bias and load conditions as specified in the test plan or procedure. The measured response
shall be compared to the upset criteria and determination of pass/fail shall be made. Devices having storage
elements shall be loaded with the applicable test pattern prior to exposure and post-exposure functional test shall be
performed to the extent necessary to verify the stored pattern.
3.6 Testing of Complex Linear Devices. Testing of complex linear devices, such as analog to digital and digital to
analog converters, shall be performed using the necessary (as specified in the test plan or procedure) exposure
conditions to ensure adequate coverage. Often, four or more exposure conditions are required. To the greatest
extent practical, the most susceptible exposure conditions (i.e., most favorable for upset to occur) shall be used. For
linear devices that have storage elements, each exposure state shall consist of a stored test pattern plus the external
bias. Each test pattern shall be loaded prior to exposure, and following the application of the radiation pulse,
functional testing of the device must be performed to the extent necessary to verify the pattern.
METHOD 1023.3
26 February 2010
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MIL-STD-883-1
3.7 Dose Rate Test Sequence.
3.7.1 Facility Preparation. The radiation source shall be adjusted to operate in the specified mode and provide a
radiation pulse within the specified pulse width range. The required dosimeters shall be installed as close as practical
to the DUT.
3.7.2 Test Circuit preparation. The dose rate test system, including all test circuitry, cables, monitoring and
recording equipment shall be assembled to provide the specified bias and load conditions and output monitoring.
The test circuit shall be placed in position such that the DUT will receive the specified dose. Unless otherwise
specified, dose rate testing shall be performed at 25 + 5C. (The test temperature shall be specified in the test
plan/procedure.)
3.7.3 Test circuit noise check. With all circuitry connected, a noise check, including radiation induced noise, shall
be made. Noise signals shall be kept as low as practicable. The circuitry and cabling system shall be modified until
the noise signals are below an acceptable level (usually less than 10% of the expected response).
METHOD 1023.3
26 February 2010
6
MIL-STD-883-1
3.7.4 Test Procedure.
CAUTION: Exercise caution when handling devices, particularly with regard to pin alignment in the and holding
fixture and when installing devices in the test circuit. Ensure that voltages are off before inserting the
DUT. Observe ESD handling procedures for the class of devices being tested, as appropriate.
Step 1: Adjust timing control system to provide the required time interval between radiation pulse and
post-irradiation measurements.
Step 2: Remove bias voltages and install a control sample device (same type as devices to be tested).
Step 3: Turn on bias voltages and verify proper device function in accordance with performance
requirements.
Step 4. Verify proper operation of all recording, monitoring and timing control equipment. Monitor and
record noise level and temperature.
Step 5. Remove bias voltages and control device, in that order.
Adjust the radiation source to operate in the specified mode to deliver the specified dose. Verify as follows:
Step 6: Put dosimetry in position and expose to radiation pulse. Verify that the dose recording
equipment is working properly and that the appropriate dose was delivered.
When the dose rate test system, radiation source and dosimetry system have been verified to be working properly,
continue as follows for each device type to be tested:
Step 7: Ensure bias is removed from the test circuit and install DUT.
Step 8: Bias the device and load the test patterns (if applicable) in accordance with the test plan or
procedure. Verify proper device functional operation.
Step 9: Expose the DUT to the radiation pulse and measure the response of the specified outputs, as well as
the recovery characteristics.
Step 10: Compare the DUT response to upset criteria, if applicable.
Repeat steps 8-10 for each exposure state and for each radiation dose rate.
Step 11: Remove bias and DUT in that order.
Note that the upset threshold shall be reported as the maximum dose rate at which the DUT does not upset.
METHOD 1023.3
26 February 2010
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MIL-STD-883-1
4. Test Report. A dose rate test report shall be prepared and shall include the following (as a minimum):
a. Device identification, including manufacturer, wafer lot and/or inspection lot traceability information, pre-
radiation history (e.g., class level S, class level B, prototype, etc).
b. Radiation test facility, type of source, pulse width, dosimetry data including pulse waveform.
c. Test date, test operator's name and organization.
d. Results of the noise test.
e. Device response data, listed by device serial number, including output and supply recovery waveforms, and
dose per pulse for each device.
f. Power supply droop during pulse.
g. Post-exposure functional test data if applicable.
h. All information included in the test plan/procedure (may be referenced or appended to test report), and any
deviations from the approved test plan/procedure.
i. Package material and thickness, and effect of package material on dose to the device (see paragraph 2.2).
5. SUMMARY. The applicable device specification or drawing shall specify the following (as applicable):
a. Device types and quantities to be tested.
b. Traceability (device number, wafer/lot number, etc.) requirements and requirements for data reporting and
submission.
c. Electrical configuration of the DUT during exposure (include schematic of exposure configuration).
d. Sequence of exposure conditions and logical test patterns.
e. Outputs to be monitored and recorded.
f. Dose rate level(s) and pulse width(s).
g. Criteria for upset and recovery, steady state value of recovered outputs and/or supply current. Include
sample waveforms if necessary.
h. Upset threshold and failure level (if applicable).
i. Post exposure functional test necessary to verify the stored pattern, and maximum time interval between
application of the radiation pulse and start of functional test.
j. Total ionizing dose limit and burnout level for each device type.
METHOD 1023.3
26 February 2010
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MIL-STD-883-1
k. Maximum current limiting resistance in series with the power supply in the application (if applicable), and
allowable resistance in the test circuit (paragraph 2.3.5).
l. Requirements for Group A electrical testing pre- and post-radiation testing, if applicable.
m. Test instrument requirements, if other than those indicated above.
n. Requirements for characterization, recharacterization and analysis.
METHOD 1023.3
26 February 2010
9
MIL-STD-883-1
APPENDIX A
A1. This appendix provides an example of the specification of test details for an operational amplifier. Because the
test conditions depend both on the type of device and on the specific application, this example shall not be
considered as suitable for use in any given case. It is provided only as an illustration of the use of this test method.
A2. Test specification, method 1023:
a. Type 741 operational amplifier, in 8-pin TO-5 package.
b. Test circuit as given on figure 1023-1. Leave pins 1, 5, and 8 unconnected.
c. V+=9.0 + 0.2 V; V-=-9.0 + 0.2 V; input signal 280 mV +5% peak to peak, 2000 +50 Hz.
d. Monitor pin 6 and the power supply current.
e. Standard noise limits apply.
f. Pulse width: 20 ns (Full width half maximum).
g. Total Ionizing dose shall not exceed 10 Gy(Si).
h. Test at a dose rate of 105 +30% Gy(Si)/s.
i. Test temperature shall be ambient (25° +5°C).
j. Pass/Fail Criteria: Power supply currents and the output signal shall return to within 10% of the
pre-rad levels within 1 ms of the radiation pulse.
k. This test is considered a destructive test.
METHOD 1023.3
26 February 2010
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MIL-STD-883-1
FIGURE 1023-1. Example of test circuit for OP-AMP.
METHOD 1023.3
26 February 2010
11
MIL-STD-883-1
APPENDIX B
B1. This appendix provides an example of the specification of test details for an analog to digital converter (ADC).
Because the test conditions depend both on the type of device and on the specific application, this example shall not
be considered as suitable for use in any given case. It is provided only as an illustration of the use of this test
method.
B2. Test specification, method 1023:
a. Type ADC (n=# bits=12), 40 pin ceramic DIP.
b. The test circuit is given in Figure 1023-2, and an overview of the test setup is provided in Figure 1023-3.
The storage RAM must write at a speed (taa>tclk) exceeding the DUT clock frequency, and provide an
interface to the controller, and be capable of storing a trigger pulse from the radiation source. Note that if the
data ready line of the ADC is used, it must be monitored separately, as it may also upset.
c. A minimum of 3 input voltages shall be tested. Adjust input bias to center output code on:
1. Midscale (2n/2)
2. Fullscale - 10% (2n-0.1*2n)
3. Zero + 10% (0+0.1*2n)
d. As a minimum, perform tests at 10 MHz and 1 MHz (Fmax and 0.1*Fmax).
e. Upset Criteria: Determination of the upset threshold shall be determined by statistical analysis comparing
the pre-shot ADC output codes with the data taken during and immediately after the shot. The time to
recover (within 20%) shall also be determined by comparing the pre-rad data with the post-rad data.
f. Pulse width: 20 ns (Full width half maximum).
g. Test at dose rates ranging from 102 - 107 Gy(Si)/s to establish upset threshold.
h. Total ionizing dose shall not exceed 500 Gy(Si).
i. Test at ambient temperature (25° +5°C).
j. After completion of the upset tests, test up to the machine maximum dose rate to determine if devices burn
out. This test is a destructive test.
METHOD 1023.3
26 February 2010
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MIL-STD-883-1
FIGURE 1023-2. Example of test circuit for ADC (C1 = 4.7 µF, C2 = 0.1 µF).
METHOD 1023.3
26 February 2010
13
MIL-STD-883-1
FIGURE 1023-3. Schematic of example test setup for ADC.
METHOD 1023.3
26 February 2010
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MIL-STD-883-1
METHOD 1030.2
PRESEAL BURN-IN
1. PURPOSE. The purpose of preseal burn-in is to identify marginal devices or stabilize monolithic, hybrid, or
multichip microcircuits prior to the sealing of packages so that rework or retrimmings can be performed. Standard or
sealed-lid burn-in testing (see method 1015) is designed to screen or eliminate marginal devices by stressing
microcircuits at or above maximum rated operating conditions or by applying equivalent screening conditions which
will reveal time and stress failure modes with equal or greater sensitivity. Performance of a portion of the standard
burn-in testing prior to sealing will identify marginal devices or those requiring retrimming at a point where rework or
retrimming can readily be performed. Use of preseal burn-in is optional and should be a function of the complexity of
the microcircuit in question coupled with, if available, actual sealed-lid burn-in failure rates.
2. APPARATUS. Details for the required apparatus and compensation for air velocity, when required, shall be as
described in method 1005. In addition, the oven used for preseal burn-in shall be so equipped to provide a dry (less
than 100 ppm moisture, at the supply point) nitrogen at 100,000 (0.5 μm or greater) particles/cubic foot controlled
environment (class 8 of ISO 14644-1). Suitable equipment shall be provided to control the flow of dry nitrogen and to
monitor the moisture content of the dry nitrogen flowing into the oven.
3. PROCEDURE. All microcircuits shall be subjected to the specified preseal burn-in test condition (see 3.1) for
the time and temperature and in the environment specified after all assembly operations, with the exception of lid
sealing, have been completed (see method 5004 herein, MIL-PRF-38534 or MIL-PRF-38535); internal visual
inspection shall be performed prior to sealing. The microcircuits shall be mounted by the leads, stud, or case in their
specified ambient temperature. Measurements before and after preseal burn-in shall be made as specified.
3.1 Test conditions. Basic test conditions are as shown below. Details of each of these conditions shall be as
described in method 1005.
a. Test condition C: Steady-state dc voltages.
b. Test condition D: Series or parallel excitation with ac conditions as applicable to exercise the device under
test to normal operating conditions.
3.1.1 Test time. Unless otherwise specified, preseal burn-in shall be performed for a minimum of 48 hours. It shall
be permissible to divide the total minimum burn-in time between preseal and postseal burn-in provided that the total
burn-in time equals or exceeds the specified burn-in time of 160 hours and that the postseal burn-in time equals or
exceeds 96 hours.
3.1.2 Test temperature. Unless otherwise specified, the preseal burn-in test temperature shall be 125°C. If a
lower temperature is used, a corresponding increase in time is necessary as shown on figure 1015-1.
3.1.3 Test environment. Preseal burn-in shall be performed in a dry nitrogen (less than 100 ppm moisture, at the
supply point), 100,000 (5 µm or greater) particles/cubic foot controlled environment (class 8 of ISO 14644-1). Prior to
heat-up, the oven shall be purged with dry nitrogen and then the bias shall be applied. Testing shall not commence
until the specified environment has been achieved.
3.2 Measurements. Measurements before preseal burn-in, shall be conducted prior to applying preseal burn-in
test conditions. Unless otherwise specified, measurements after preseal burn-in shall be completed within 96 hours
after removal of the microcircuits from the specified pre-seal burn-in test condition and shall consist of all 25°C dc
parameter measurements (subgroup A-1 of method 5005) and all parameters for which delta limits have been
specified as part of interim electrical measurements. Delta limit acceptance, when applicable, shall be based upon
these measurements. If these measurements cannot be completed within 96 hours, the microcircuits shall be
subjected to the same specified test conditions (see 3.1) previously used for a minimum of 24 additional hours before
measurements after pre-seal burn-in are made.
METHOD 1030.2
18 June 2004
1
MIL-STD-883-1
3.2.1 Cooldown after preseal burn-in. All microcircuits shall be cooled to within 10°C of their power stable
condition at room temperature prior to the removal of bias. The interruption of bias for up to 1 minute for the purpose
of moving the microcircuits to cool-down positions separate from the chamber within which testing was performed
shall not be considered removal of bias. Alternatively, except for linear or MOS devices (CMOS, NMOS, PMOS, etc.)
the bias may be removed during cooling provided the case temperature of microcircuits under test is reduced to a
maximum of 35°C within 30 minutes after the removal of the test conditions. All 25°C dc measurements shall be
completed prior to any reheating of the microcircuits.
3.2.2 Failure verification and repair. Microcircuits which fail the 25°C dc measurements after preseal burn-in shall
be submitted for failure verification in accordance with test condition A of method 5003. After verification and location
of the defective or marginal device in the microcircuit, rework shall be performed as allowed in MIL-PRF-38535 or
MIL-PRF-38534. Upon completion of rework, repaired microcircuits shall be remeasured and, if found satisfactory,
shall be returned for additional preseal burn-in (see 3.1) if such rework involved device replacement.
conclusion of the test to establish that all microcircuits are being stressed to the specified requirements. The
following is the minimum acceptable monitoring procedure:
a. Device sockets. Initially and at least each 6 months thereafter, each test board or tray shall be checked to
verify continuity to connector points to assure that bias supplies and signal information will be applied to
each socket. Except for this initial and periodic verification, each microcircuit socket does not have to be
checked; however, random sampling techniques shall be applied prior to each time a board is used and
shall be adequate to assure that there are correct and continuous electrical connections to the microcircuits
under test.
b. Connectors to test boards or trays. After the test boards are loaded with microcircuits and are inserted into
the oven, and prior to the nitrogen purge, each required test voltage and signal condition shall be verified in
at least one location on each test board or tray so as to assure electrical continuity and the correct
application of specified electrical stresses for each connection or contact pair used in the applicable test
configuration.
c. At the conclusion of the test period, after cool-down, the voltage and signal condition verification of b above
shall be repeated.
specified test duration.
3.3 Handling of unsealed microcircuits. It is recommended that unsealed microcircuits be covered at all times for
protection from handling induced defects. Snap-on metal covers, or rigid plastic covers with a conductive coating,
may be removed from the microcircuits after all microcircuits are in place in the burn-in racks. Covers, if removed
shall be replaced immediately after bias removal and completion of burn-in and cool-down prior to removal of
microcircuits from the burn-in racks. Regardless of the method of handling during the time period between the
completion of internal visual inspection following preseal burn-in and sealing, the microcircuits shall be retained in a
controlled environment (see method 2017).
3.4 Sealed-lid burn-in. After completion of preseal burn-in, internal visual, other preseal screens and sealing all
microcircuits shall undergo the screening specified in method 5004 herein, MIL-PRF-38534 or MIL-PRF-38535
except that stabilization bake may be deleted. Sealed-lid burn-in shall be performed as specified in method 5004
herein , MIL-PRF-38534 or MIL-PRF-38535 (see method 1015 for test details).
METHOD 1030.2
18 June 2004
2
MIL-STD-883-1
4. SUMMARY. The following details shall be specified in the applicable acquisition document.
a. Test condition letter and burn-in circuit with requirements for inputs, outputs, applied voltages and power
dissipation as applicable (see 3.1).
b. Test mounting, if other than normal (see 3).
c. Pre and post preseal burn-in measurement and shift limits, as applicable (see 3.2).
d. Time within which post preseal burn-in measurements must be completed if other than specified (see 3.2).
e. Type of covers used to protect microcircuits from handling induced defects (see 3.3).
f. Test duration for preseal and sealed lid burn-in (see 3.1.1).
g. Test temperature, if less than 125°C (see 3.1.2).
METHOD 1030.2
18 June 2004
3
MIL-STD-883-1
METHOD 1030.2
18 June 2004
4
MIL-STD-883-1
METHOD 1031
THIN FILM CORROSION TEST
1. PURPOSE. The thin film corrosion test is performed for the purpose of demonstrating the quality or reliability of
devices subjected to the specified conditions over a specified time period. This sample test is to be applied as either
a short term specialized quality assurance test or as a long term acceleration test to assure device reliability. It is
particularly suited to devices containing thin film conductors, resistors, or fuses which are susceptible to corrosion as
a result of cavity water vapor which is less than the limits specified in methods 5005 herein and MIL-PRF-38534.
Because of the destructive nature of the test, it should not be used as a 100 percent screen. It is the intent of this test
to reveal time and temperature, stress dependent, moisture related failure modes resulting from metallization
corrosion.
the terminals of devices under test in the specified circuit configuration. Power supplies and a temperature chamber
shall be capable of maintaining the specified operating conditions as a minima throughout the testing period. The test
chamber shall be conditioned with dry air to prevent the test ambient from reaching 100 percent relative humidity
during temperature cycling.
3. PROCEDURE. The microcircuits shall be subjected to the specified conditions, duration, and temperature, and
the required measurements shall be made at the conclusion of the test. The test conditions, duration, quantity, and
temperature shall be recorded and shall govern for the entire test. All programmable devices processed by the
manufacturer to an altered item drawing shall be programmed prior to the test.
3.1 Test conditions.
3.1.1 Device conditioning. All devices shall be conditioned, without bias at 125°C ±10°C for a minimum of 24
hours before proceeding with the test.
3.1.1.1 Short term testing. For short term quality assurance testing the time-temperature bias sequence of figure
1031-1 shall be followed for 16 cycles, 3 hours each, for a total of 48 hours. The following sequence shall be used for
the short term test:
Initial conditioning drives out deeply trapped water into ambient
Step AB 125°C: Activate surface water from walls.
Step BC Freeze out ambient water on walls and chip (temperature ramp 100°C/minute).
Step CD Allow surface temperatures inside package to come to equilibrium (i.e., redistribute water).
Step DE Transfer water from walls to chip (cold surface pump). At point E apply bias while chip is
wet.
Step EF Adjust temperature ramp so that chip is always the coldest temperature by minimizing heat
dissipation and adjusting temperature ramp (maximum 100°C/minute).
Step FG Maintain 2°C ambient to insure highest R.H. near chip while bias is still applied.
Step GH Heat quickly to evaporate water from walls, possibly with explosive force to enhance
contaminant transfer from the walls to the chip (maximum 100°C/minute).
Temperature test cycle at 25°C when bias is applied. Remove from test fixture.
METHOD 1031
25 August 1983
1
MIL-STD-883-1
3.1.1.2 Long term testing. For long term reliability assurance testing the following modifications shall be made:
Step AB Increased to 12 hours.
Step CD Increased to 1 hour.
Step DE Remains the same one-half hour.
Step EG Bias applied at pt E and then cycled 30 minutes on, 30 minutes off during FG. Total time
24 hours.
Step EF May be extended to 4 hours if power dissipation can be minimized.
Step FG Increased to 6.5 hours. Total test time 10 weeks or 70 cycles.
Terminate test cycle at 25°C when bias is applied.
Remove from test fixture.
3.2 Measurements. Unless otherwise specified, all electrical measurement shall be completed within 12 hours
after removal from the specified test conditions. End point measurements shall consist of group A, subgroups 1 and
7 at 25°C.
NOTE: Method 1014 fine and gross leak test must be accomplished before 3.1.1 and after 3.2. Any circuit failing
the leak test will be removed from the test lot.
4. SUMMARY. The following details shall be provided in the applicable device specification or drawing:
a. The electrical test configuration.
b. The number of devices to be tested and the acceptance criteria.
c. Requirements for data recording, when applicable.
METHOD 1031
25 August 1983
2
MIL-STD-883-1
FIGURE 1031-1. Graphical representation of corrosion test.
METHOD 1031
25 August 1983
3
MIL-STD-883-1
METHOD 1031
25 August 1983
4
MIL-STD-883-1
METHOD 1032.1
PACKAGE INDUCED SOFT ERROR TEST PROCEDURE

(DUE TO ALPHA PARTICLES)
1. PURPOSE. This test method defines the procedure for testing integrated circuits under known test conditions
for susceptibility to alpha induced errors. This test was specifically designed to measure the device's ability to
withstand alpha particle impact. In addition, the procedure will determine the effectiveness of a "die-coating" shield.
The test objective is to determine the rate that failures are induced due to alpha radiation sourced from the device
package, die and die-coat material.
1.1 Definitions. The following definitions were created to be specific and relevant within the confines of this
method.
1.1.1 DUT. Device under test.
1.1.2 Soft error. Any error induced by alpha particle impact resulting in either a transient error or an error in data
storage witnessed at the DUT's output.
1.1.3 Source. A foil of Thorium-232. (Note: This foil generates particles which have an alpha energy spectrum of
0 through 10 MeV).
1.1.4 Soft error rate (SER). Failures per unit time under normal conditions of package environment.
1.1.5 Accelerated soft error rate (ASER). Failures per unit time induced by exposure to a known alpha particle
source.
1.1.6 Failure in time (FIT). 1 FIT = 1 failure in 109 device-hours.
1.1.7 Package flux. The total number of alpha particles impinging on the die surface per unit of time and area, due
to package material impurities (i.e., lid, die material, sealants, and optional alpha barrier material). Normal units of
measurement: alpha/cm2-hr.
1.1.8 Modified package flux. The total number of alpha particles impinging on the die surface per unit of time and
area, when a die coat is in place. Normal units of measurement: alpha/cm2-hr.
1.1.9 Source flux. The total number of alpha particles impinging on the die surface per unit of time and area, due
to the calibrated source. Normal units of measurement: alpha/cm2-s.
2. APPARATUS. The apparatus will consist of electrical test instrumentation, test circuit board(s), cabling,
interconnect boards, or switching systems and a Thorium-232 foil (optional). Precautions will be observed to obtain
an electrical measurement system with adequate shielding, low electrical noise induction, and proper grounding.
2.1 Radiation source. The radiation source used in this test shall be a Thorium-232 foil with dimensions large
enough to cover the entire exposed die cavity. The plated source shall be within the range of 0.01 - 5.0 Ci and shall
produce the same energy spectrum as the package impurities. Radiation sources must be controlled according to
state and federal regulations. The sources shall be certified periodically and decay rates used to determine the
actual flux values at the time of use. This source must be processed at least one year before being used. Caution:
These sources should not be exposed to heat.
2.2 Electrical test instruments. Electrical test instruments will be standard test instruments normally used for
testing the DUT. They must be capable of establishing the required test conditions and measuring the required
electrical parameters. All instruments shall be periodically calibrated in accordance with the general requirements of
this test method standard.
METHOD 1032.1
29 May 1987
1
MIL-STD-883-1
2.3 Test circuits. The test circuit shall contain the DUT, wiring, and auxiliary components as required. Connection
will allow for the application of the specified test conditions to obtain the specified outputs. Provision will be made for
monitoring and recording the specified outputs. Any loading of the output(s), such as resistors or capacitors, shall be
specified. The test circuit must not exhibit permanent changes in electrical characteristics as a result of exposure to
the radioactive source. Shielding will be incorporated to prevent such effects from occurring if necessary.
2.4 Cabling. Cabling, if required, shall be provided to connect the test circuit board containing the DUT to the test
instrumentation. All cables will be as short as possible. Care will be exercised to reduce electrical noise induced by
the cable by using shielded cable, triax, zipper tubing, or other shielding methods.
3. PROCEDURES. Two methods of testing are allowed by this procedure. The first is a long term test (sometimes
referred to as a system test) which does not incorporate a source but which accumulates a statistically valid amount
of test time to determine the SER directly. This method is self explanatory and must be accomplished using the
same parameters outlined in 3.1 (test plan). To determine the SER from this method, the following formula should be
used and the result converted to FIT's.
SER = Total number of errors/Total test time
The second method incorporates the use of the source outlined in 2.1 (radiation source). The procedure for testing
with an accelerated flux provided by the source is given below. These steps will be followed for each test outlined in
3.1.
a. The flux that the surface of the die would receive without a die coat will be determined. This is designated
as the package flux.
b. If the device has a die-coat it should be left in place for the next portion of the test. The DUT will be
delidded and the source placed directly over the die cavity at the same distance as the package lid was
from the die.
NOTE: The distance between the foil and the die must be less than 50 mils and the foil must cover the
entire die-cavity opening in order to assure all angles of incidence will be maintained.
NOTE: If the DUT has an inverted die configuration (e.g., flip-chip) a test jig must be implemented which
will expose the active surface of the die to the irradiating source.
c. The testing outlined in 3.1 will be performed at this time with the configuration in b. above, in order to
determine the SER for each test performed.
d. Recorded for each test performed will be the following:
(1) Total number of errors recorded during each test.
(2) Time to accumulate the errors.
(3) SER1, calculated from the following formulas:
ASER1 = Total number of errors/test time
SER1 = ASER1 x (Package flux/source flux)
e. If no die-coating has been applied, the SER1 will be reported as the measured rate of failure. However, if a
die coat exists, steps 3.f through 3.j will also be performed.
METHOD 1032.1
29 May 1987
2
MIL-STD-883-1
f. The flux at the surface of the die will be determined when the die coat is in place; this is designated as the
modified package flux.
NOTE: The modified package flux should be the sum of the flux from the die and die-coat material only.
g. The die coat should be removed, assuring that no damage to the die has occurred and the source placed
as described in step b.
h. The tests performed in step 3.c must be repeated with this configuration, and the new SER will be
designated SER2.
i. Recorded for each test performed will be the following:
(1) Total number of errors recorded during each test.
(2) Time to accumulate the errors.
(3) SER (SER2), calculated from the following formulas:
ASER2 = Total number of errors/test time
SER2 = ASER2 x (Modified package flux/source flux)
j. The SER for the corresponding tests will be summed and reported as the rate of failure for this DUT, using
the following formula:
SER = SER1 + SER2
NOTE: The order of the steps above can be reversed to enable testing before the die coat is applied and then after it
has been applied, if desired.
3.1 Test plan. A test plan will be devised which will include determination of the worst case operating environment
of the DUT to determine the worst case SER, incorporating the steps outlined above. The data patterns used will
ensure that each cell and path, or both, is tested for both the logic zero and logic one states. The device will be
continuously monitored and refreshed and the data errors counted. This test will be required for each new device
type or design revisions. The source value and exposure time will be sufficient to obtain a significant number of soft
error failures.
NOTE: If a data-retention or a reduced supply mode is a valid operating point for the DUT, this condition must also
be tested for its SER.
3.1.1 The test equipment program. The test equipment program will be devised to cycle and refresh the stored
data or cycled pattern continually, recording the number of errors.
3.1.2 Test conditions. Testing shall be performed at three separate cycle rates and at minimum and maximum
voltages. Unless otherwise specified, the following cycle timing will be used: The minimum and the maximum
specified cycle timing and the midpoint between the minimum and maximum specified cycle timing.
NOTE: If the device is a static or dynamic random access memory device, the device will be tested under both read
and write operations.
3.2 Report. As a minimum, the report will include device identification, test date, test operator, test facility (if
applicable), radiation source, test cycle times and voltages, data analysis, and equipment used in the test.
METHOD 1032.1
29 May 1987
3
MIL-STD-883-1
4. SUMMARY. The following details shall be specified.
a. Device type and quantity to be tested.
b. Test circuit to be used.
c. Device output pins to be monitored.
d. Alpha source used if other than specified herein.
e. Alpha source Curie level.
f. Package flux measurement techniques.
g. Test equipment to be used.
h. Procedures for proper handling of radioactive materials.
METHOD 1032.1
29 May 1987
4
MIL-STD-883-1
METHOD 1033
ENDURANCE LIFE
1. PURPOSE. Endurance life is performed in order to demonstrate the quality and reliability of nonvolatile memory
devices subjected to repeated write/erase cycles. This method may also be used in a screening sequence or as a
preconditioning treatment prior to conducting other tests. It may be desirable to make end point, and where
applicable, intermediate measurements on a serialized device basis or on the basis of a histogram distribution by
total sample in order to increase the sensitivity of the test to parameter degradation or the progression of specific
failure mechanism with cycles, time, or temperature.
1.1.1 Endurance. The number of write/erase cycles a device can tolerate before failing to perform to specification.
1.1.2 Write/erase cycle. The act of changing the data from original to opposite to original in all bits of a memory
device. This may be done for all bits in parallel or serial, e.g., block, byte, or bit.
1.1.3 Data retention screen. The unbiased baking at high temperature to accelerate the loss of charge from the
storage node.
2. APPARATUS. The apparatus required for this test shall consist of equipment capable of write/erase cycling the
devices, a controlled temperature chamber for performing a data retention bake, and suitable electrical test
equipment to make the specified interim and end point measurements.
3. PROCEDURE. The devices shall be write/erase cycled (all bits) for specified maximum number of cycles,
followed by electrical test, the specified data retention bake and electrical test. Interim pull points shall use the same
sequence of cycle, electrical test, data retention bake, and electrical test.
3.1 Test condition. The case temperature, cycle time, data retention bake, and electrical test temperatures and
conditions will be specified in the applicable device specification or drawing (see 4).
3.2 Failure criteria. No device is acceptable that exhibits:
a. Inability to write or erase across the temperature range.
b. Inability to retain data.
c. Inability to read at specified timing conditions, across the temperature and supply voltage range.
d. Inability to be write/erase cycled a minimum number of times n.
METHOD 1033
29 May 1977
1
MIL-STD-883-1
a. Number of write/erase cycles, n.
b. Data retention bake conditions, including duration and temperature.
c. Electrical test case temperature and timing conditions.
d. Requirements for preconditioning, if applicable, and procedure if different than in 3.
e. Cycle conditions including temperature, type (e.g., block, byte, or bit) and write/erase pulse duration and
repetition rate.
f. The sample plan including number of devices to be cycled and acceptance number.
g. End-point and interim electrical test criteria.
METHOD 1033
29 May 1977
2
MIL-STD-883-1
METHOD 1034.2
DYE PENETRANT TEST
1. PURPOSE. This method tests the capability of a Plastic Encapsulated Microcircuit (PEM) to withstand moisture
ingress and to detect flaws in packaging materials.
2. APPARATUS. The apparatus for the Dye Penetrant test shall be as follows.
a. Protective absorbent mats (paper/plastic)
b. 2 2000 ml containers
c. 2 1000 ml beakers
d. 2 mixing magnets
e. 2 hot plates for mixing
f. Whatman 42 filters (0.005)
g. 500 ml funnel
h. Fisher bell jar with stopper
i. Filtration base with vacuum accessories (fisher allied filtrator #9-788 11 cm base)
j. Vacuum pump, hoses, and clamps
k. 15 ml beaker
l. 50 ml beaker
m. 2 250 ml beakers
n. Watchglass or evaporating dish
o. Petri dish
p. Drummond 0.1 ml pipettes and plunger
q. Graduated cylinder
r. Vacuum oven
s. Heating oven
t. B1 filter / polyvar (or olympus PMG3 inverted microscope)
u. 400 ASA / ISO speed film or equivalent (Black and White)
v. 3200 ASA / ISO speed film or equivalent (Black and White)
METHOD 1034.2
25 April 2016
1
MIL-STD-883-1
3. PROCEDURES. The following procedures shall be followed in performing the Dye Penetrant test. This
technique utilizes a low viscosity, anaerobic liquid penetrant (Resinol) which is mixed with a fluorescent powder
(Yellow Dye G) and a anaerobic accelerator (17724).
NOTE: These chemicals are skin, eye and nose irritants.
3.1 Dye penetration procedure outline.
a. Mix dye solution.
Loctite Resinol RTC 18018

Loctite Accelerator for PMS 17724
Morton Fluorescent Yellow G
Note: Solutions with an established or verifiable equivalent makeup and performance may be used.
b. Place the parts in a beaker of the dye solution.
c. Place the beaker in the vacuum oven.
d. Leave the beaker for 15 minutes at a vacuum of 1 to 0.3 torr.
e. Bring the vacuum oven back to atmospheric pressure, then wait 15 minutes.
f. Remove the parts from the dye solution.
g. Wipe off the parts to remove the excess dye.
h. Heat the parts in the oven at 100C for 1 hour to harden the polymer mixture.
i. Mount the parts for cross-sectioning.
j. Cross-section the parts.
k. View the parts under magnification.
l. Take an optical photo of the cross-section.
m. Take a photo of the cross-section under UV to document the depth of penetration.
NOTE: Lay down a double layer of protective mats before starting this procedure. The dye spreads and stains quite
easily. Be sure to wear the appropriate protective apparel, which includes chemical gloves, goggles, and a
lab coat.
3.1.1 PREMIX solution preparation. Prepare a stock solution (PREMIX solution) of the resinol and yellow dye.
3.1.1.1 Mixing the solution. A mixture of 100 parts resinol to 1 part yellow dye powder is required to make the
PREMIX solution.
a. Measure and pour 2000 ml of resinol into a beaker.
b. Measure 20 g of yellow dye and pour it into the 2000 ml of resinol. Stir this mixture for 5 minutes, then
separate the mixture into two 1000 ml beakers to make it easier to work with. Place a mixing magnet in
each of the beakers, then place the beakers on mixing plates. Stir the mixtures for two to three hours.
METHOD 1034.2
25 April 2016
2
MIL-STD-883-1
3.1.1.2 Filtering the PREMIX. The PREMIX must be filtered to ensure that any undissolved particles are removed
from the solution.
a. Take a WHATMAN 42 filter and place it in the 11 cm Buckner funnel. Place the funnel adapter on the stem
of the funnel. Then place the funnel into the top of the bell jar. Place a 250 ml beaker on the bell jar base.
Place the bell jar and funnel over the beaker on the bell jar base.
b. Turn on the vacuum pump.
c. Take one of the 1000 ml beakers of premix and pour about 200 ml of the premix into the funnel. When the
solution has drained through the funnel, turn off the vacuum pump, and pour the filtered solution into an
empty container marked "RESINOL AND YELLOW DYE G MIXTURE". Repeat this process until all of the
solution is filtered.
d. Remove the filter and replace it with a new one.
e. Repeat step 3 with the second 1000 ml beaker of solution.
f. Wash the beakers in a soap and water solution.
3.1.2 Setup of PREMIX and accelerator. A mixture of 200,000 parts PREMIX to 1 part accelerator is required.
Due to the small amount of accelerator required, the mixture of premix and accelerator is performed in two steps.
First a 200:1 mixture is prepared, then a 1000:1 mixture is made utilizing the 200:1 solution in order to achieve a
200,000:1 mixture.
a. Measure out 10 ml of premix (resinol/yellow dye stock solution) with a graduated cylinder. Pour the 10 ml
into a small beaker.
b. Insert the Drummond pipette and plunger into the accelerator solution. The glass pipette has two green
markings. The first marking is 0.05 ml, and the second marking is 0.1 ml.
c. Draw up 0.05 ml (1st green mark) of accelerator, and mix it into the 10 ml of premix.
d. Place a mixing magnet into the solution, and place the beaker on the mixing plate. Stir the solution for 5
minutes. This completes the mixing of the 200:1 premix:accelerator solution.
e. Clean the pipette and plunger in a soap and water solution. They must be clean when they are used in step
h.
f. Fill a graduated cylinder with the amount of premix (resinol/yellow dye solution) that is needed to submerse
the devices requiring dye penetration. Most jobs will require 25 ml of solution. The amount will vary
depending upon the number and size of the devices in the job.
g. Pour the 25 ml of premix (or the desired amount) into a small beaker.
h. Using a clean plunger and pipette, a small amount of the 200:1 premix:accelerator solution is added to the
desired amount of premix. For 25 ml of premix, 0.025 ml of 200:1 premix/accelerator solution is used.
Other typical mixtures are listed below.
10 ml premix : 0.010 ml 200:1 premix/accelerator solution

METHOD 1034.2
25 April 2016
3
MIL-STD-883-1
i. Place a mixing magnet into the solution and place on a mixing plate for 5 minutes. This creates the final
200,000:1 premix:accelerator solution.
j. The 200:1 solution can now be discarded by placing it in the bottle marked "RESINOL, YELLOW DYE G,
and ACCELERATOR WASTE".
k. Clean all of the glassware and pipettes with a soap and water solution.
3.1.3 Vacuum setup.
a. Place the parts in the premix/accelerator mixture.
b. Place the beaker in a petri dish to catch any spill solution that spills over during the vacuum operation.
c. Place a larger beaker over the beaker with solution in it to prevent splattering all over the vacuum oven.
3.1.3.1 Vacuum. Many vacuum ovens can be used for this procedure as long as the oven is able to reach 1 to 0.3
torr. The oven should have a gauge that can accurately measure the pressure at this level. One method is given
below.
a. Place the door of the vacuum chamber by unscrewing the handle counter clockwise.
b. Place the beaker set-up into the vacuum chamber.
c. Close the vacuum oven door. Close the door latch and turn it clockwise until tight.
d. Close the valves on both sides of the oven. The vacuum is monitored by the gauge on the top of the oven.
The vacuum meter is connected to the outtake of the oven.
e. Turn on the vacuum pump.
f. Monitor the outgassing of the solution while its under vacuum. Violent outgassing will start at approximately
10 torr. The valves on either side of the oven (one on the left side and one on the right side of the oven)
can be cracked open to lessen the vacuum on the inside of the oven. By doing this, the outgassing can be
controlled, so that the mixture doesn't spill over.
g. Once the outgassing stops, close the valves on the vacuum oven and wait for the pressure to decrease to 1
torr. The working vacuum for the procedure is 1 to 0.3 torr.
h. Once the Granville-Phillips vacuum gauge reaches 1 torr, wait for 15 minutes.
3.1.3.2 Post vacuum procedure.
a. At the end of 15 minutes, turn off the vacuum pump.
b. Open both of the intake valves until the vacuum inside the chamber is equal to the outside pressure. Leave
the devices in this state for 15 minutes.
c. At the end of the 15 minutes, open the door and remove the beakers from the vacuum chamber.
METHOD 1034.2
25 April 2016
4
MIL-STD-883-1
3.1.4 Cleaning the devices.
a. Remove the devices from the solution.
b. Pad off the excess solution with a paper towel and cotton swab.
c. The remaining mixture can now be discarded into the bottle marked "RESINOL, YELLOW DYE G, AND
ACCELERATOR WASTE".
d. The beakers, pipettes, and glassware can all be cleaned in soap and water.
3.1.5 Baking the devices.
a. Place the devices in a petri dish, and place the dish into an oven preheated to 100 degrees C. Bake for 1
hour.
b. After the bake, the parts can be mounted for cross-sectioning.
3.1.6 Cross-sectioning.
a. Normal cross-sectioning procedures can be performed on the samples.
b. Make sure that stray particles of dye do not smear or become embedded in the cross-sectioned surfaces.
This will give you a false representation of the dye in the sample. (Smearing looks like little stars when
viewed through the ultraviolet filtering.) Be sure to clean the samples thoroughly after grinding and
polishing operations to avoid these complications.
3.1.7 Viewing cross-sections on a microscope. The exposure time will vary from sample to sample and from
microscope to microscope. The best scope for viewing dye penetration will have a bright light source (200 W
mercury lamp).
a. View the cross-section under normal bright field conditions. To take a photo, use the green filter, set the
proper exposure, and then take the photo using 400 ASA / ISO speed film or equivalent (Black and White).
b. Slide out the bright field mirror cube.
c. For the Olympus PMG3, slide in the blue excitation fluorescence cube (BH2-UDMB). For the Polyvar,
remove the B1 filter from the filter box and insert it into the left hand side of the Polyvar.
d. Remove the green viewing filter. The fluorescence of the dye will be difficult to see if the filter is in place.
e. Insert the 3200 ASA / ISO speed film. Though the film is 3200 speed, leave the ASA / ISO at 400 to take
the photo. This will give you a good approximation for the proper exposure. Make adjustments as
necessary to obtain the desired exposure. The exposure time will vary depending upon the amount of
fluorescent dye there is in frame.
METHOD 1034.2
25 April 2016
5
MIL-STD-883-1
3.2 Dye penetrant evaluation criteria. The following cross-sections or other relevant cross sections shall be
evaluated.
a. One cross-section on the long axis of the package (examine tie bar)
b. Three cross- sections on the short axis (examine shortest lead, die or paddle edge, and one other).
As a minimum the following criteria shall be used for evaluation and any discrepancies shall be reported:
a. Any evidence of fracture or other packaging related defects.
b. Any evidence of delamination.
c. Any evidence of dye reaching the die attach or die surface.
d. Any evidence of dye penetration of more than 50 percent at a lead egress.
e. Any evidence of dye penetration of more than 50 percent of the length of any lead in the package.
4. SUMMARY. The following details shall be specified in the applicable acquisition document.
a. Any failure criteria different than that specified in 3.2.
b. Test sample if no sample is specified.
METHOD 1034.2
25 April 2016
6
MIL-STD-883-1
CONCLUDING MATERIAL
Custodians: Preparing activity:

Army - CR DLA – CC
Navy - EC
Air Force – 85 (Project 5962-2019-005)
NASA – NA
DLA – CC
Review activities:
Army - AR, EA, MI, SM
Navy – AS, CG, MC, SH
Air Force – 03, 19
NOTE: The activities listed above were interested in this document as of the date of this document. Since
organizations and responsibilities can change, you should verify the currency of the information above using
the ASSIST Online database at https://assist.dla.mil/.

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This document and process conversion INCH - POUND

AMSC N/A FSC 5962

DISTRIBUTION STATEMENT A. Approved for public release. Distribution is unlimited.

2. APPLICABLE DOCUMENTS ............................................................................................. 1

4. GENERAL REQUIREMENTS ............................................................................................ 8

5. DETAIL REQUIREMENTS ................................................................................................. 9

METHOD NO. ENVIRONMENTAL TESTS

1001 Barometric pressure, reduced (altitude operation)

2.2 Government documents.

DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-680 - Degreasing Solvent, Performance Specification For.

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-202 - Electronic and Electrical Component Parts.

DEPARTMENT OF DEFENSE HANDBOOKS

MIL-HDBK-217 - Reliability Prediction of Electronic Equipment.

SAE AMS-STD-595 - Colors Used in Government Procurement

OTHER GOVERNMENT DOCUMENTS, DRAWINGS, AND PUBLICATIONS

QML-38534 - Hybrid Microcircuits, General Specification For.

COMMERCIAL ITEM DESCRIPTIONS

A-A-58092 - Tape, Antiseize, Polytetrafluorethylene.

(Copies of these documents are available online at https://quicksearch.dla.mil.)

INTERNATIONAL ORGANIZATION FOR STANDARDIZATION (ISO) STANDARDS

(Copies of these documents are available online at https://www.iso.org)

AMERICAN NATIONAL STANDARDS INSTITUTE (ANSI)

(Copies of these documents are available online at https://ansi.org)

IPC - ASSOCIATION CONNECTING ELECTRONICS INDUSTRIES (IPC)

IPC J-STD-004 - Requirements for Soldering Fluxes.

(Copies of these documents are available online at https://www.ipc.org)

JEDEC SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC).

JEDEC JESD22-B116 - Wire Bond Shear Test

(Copies of these documents are available online at https://www.jedec.org)

NATIONAL COUNCIL ON RADIAATION PROTECTION AND MEASUREMENT

Report Number 40 - Protection Against Radiation from Brachytherapy Sources

(Copies of these documents are available online at http://www.NCRPPublications.org)

TechAmerica EIA-557 - Statistical Process Control Systems.

(Copies of these documents are available online at https://www.techstreet.com)

AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM)

AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) (CONTINUED)

(Copies of these documents are available online at https://www.astm.org/)

3.1.1 Microelectronic device. A microcircuit, microcircuit module, or an element of a microcircuit as defined in

TABLE I. Destructive tests.

Test method number Test

TABLE II. Non-destructive tests.

Test method number Test

This section is not applicable to this standard.

6.3 Subject term (key word) listing

BAROMETRIC PRESSURE, REDUCED (ALTITUDE OPERATION)

Test condition Pressure, maximum Altitude

a. Method of mounting (see 3).

e. Exposure time prior to measurement, if applicable (see 3)

Test Number of Duration of Immersion bath Temperature

A 2 15 Fresh (tap) water 25 +10

B 2 15 Saturated solution 25 +10

1/ Synonyms are tetrahydro-1, 4-oxazine and diethylenimide oxide.

d. Dissection and internal examination, where applicable (see 3)

2. APPARATUS. Insulation-resistance measurements shall be made on an apparatus suitable for the

Test condition Test potential

a. Test condition letter, or other test potential, if specified (see 3).