LDC 1612
LDC 1612
LDC 1612
LDC1612, LDC1614
SNOSCY9A – DECEMBER 2014 – REVISED MARCH 2018
SD 0.6
GPIO
INTB
IN0A GPIO
0.5
Target
IN0B
0.4
Sensor 0
Core
GND 0.3
IN1A 0.2
SDA
Target I 2C
IN1B I 2C SCL Peripheral 0.1
3.3 V
Sensor 1 ADDR
GND 0
0 20% 40% 60% 80% 100%
Sensing Range (Target Distance / ‡SENSOR) D002
Copyright © 2016, Texas Instruments Incorporated
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LDC1612, LDC1614
SNOSCY9A – DECEMBER 2014 – REVISED MARCH 2018 www.ti.com
Table of Contents
1 Features .................................................................. 1 7.6 Register Maps ......................................................... 15
2 Applications ........................................................... 1 8 Application and Implementation ........................ 34
3 Description ............................................................. 1 8.1 Application Information............................................ 34
4 Revision History..................................................... 2 8.2 Typical Application ................................................. 49
5 Pin Configuration and Functions ......................... 4 9 Power Supply Recommendations...................... 53
6 Specifications......................................................... 5 10 Layout................................................................... 54
6.1 Absolute Maximum Ratings ...................................... 5 10.1 Layout Guidelines ................................................. 54
6.2 ESD Ratings ............................................................ 5 10.2 Layout Example .................................................... 54
6.3 Recommended Operating Conditions....................... 5 11 Device and Documentation Support ................. 55
6.4 Thermal Information ................................................. 5 11.1 Device Support...................................................... 55
6.5 Electrical Characteristics........................................... 6 11.2 Documentation Support ........................................ 55
6.6 Switching Characteristics - I2C ................................. 7 11.3 Related Links ........................................................ 55
6.7 Typical Characteristics .............................................. 8 11.4 Receiving Notification of Documentation Updates 55
7 Detailed Description ............................................ 10 11.5 Community Resources.......................................... 55
7.1 Overview ................................................................. 10 11.6 Trademarks ........................................................... 56
7.2 Functional Block Diagram ....................................... 10 11.7 Electrostatic Discharge Caution ............................ 56
7.3 Feature Description................................................. 10 11.8 Glossary ................................................................ 56
7.4 Device Functional Modes........................................ 12 12 Mechanical, Packaging, and Orderable
7.5 Programming........................................................... 13 Information ........................................................... 56
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
• Changed ESD values from 1000 to 2000 and from 250 to 750 on both packages................................................................ 5
• Added logic levels for ADDR, INTB, and SD pins. ................................................................................................................. 6
• Changed description of clocking architecture for improved clarity. ..................................................................................... 11
• Changed register names and field names from CHx_NAME and NAME_CHx to NAMEx. ................................................ 15
• Added instructions on setting registers with both R and R/W fields..................................................................................... 15
• Changed register names from DATA_MSB_CHx to DATAx_MSB; DATA_LSB_CHx register names to DATAx_LSB,
and CHx_ERR_YY field names to ERR_YYx. ..................................................................................................................... 16
• Changed ERR_AE field description on DATA_MSB_CH0, DATA_MSB_CH1, DATA_MSB_CH2 and
DATA_MSB_CH3 tables....................................................................................................................................................... 16
• Changed register names from RCOUNT_CHx to RCOUNTx; and CHx_RCOUNT field names to RCOUNTx .................. 20
• Changed register names from OFFSET_CHx to OFFSETx; and CHx_OFFSET field names to OFFSETx ...................... 21
• Changed register names from SETTLECOUNT_CHx to SETTLECOUNTx; and CHx_SETTLECOUNT field names to
SETTLECOUNTx ................................................................................................................................................................. 22
• Changed Address of SETTLECOUNT0 and SETTLECOUNT1 were not correct on table. ................................................ 23
• Changed register names from CLOCK_DIVIDERS_CHx to CLOCK_DIVIDERSx; CHx_FIN_DIVIDER field names to
FIN_DIVIDERx, and CHx_FREF_DIVIDER field names to FREF_DIVIDERx. ................................................................... 24
• Changed CHx_UNREADCONV field names to UNREADCONVx ...................................................................................... 26
• Changed register names from DRIVE_CURRENT_CHx to DRIVE_CURRENTx; CHx_IDRIVE field names to
IDRIVEx, and CHx_INIT_IDRIVE to INIT_IDRIVEx ............................................................................................................ 31
• Changed Application Information section for clarity, and provided additional information on device configuration and
operation. ............................................................................................................................................................................. 34
• Changed Equations in the L-C Resonators section. ............................................................................................................ 35
• Changed RP to RS in Equation ............................................................................................................................................ 35
• Changed IDRIVEx values ..................................................................................................................................................... 42
• Added instructions for using an oscilloscope to configure sensor drive current .................................................................. 44
IN3B
IN3A
IN2B
IN2A
16
15
14
13
SCL 1 12 IN1B
SCL 1 12 IN1B
SDA 2 11 IN1A
8
SD 6 7 VDD
INTB
SD
VDD
GND
LDC1612 WSON-12 LDC1614 WQFN-16
Pin Functions
PIN
TYPE (1) DESCRIPTION
NAME NO.
SCL 1 I I2C Clock input. Open drain output; requires resistive pullup to logic high level.
SDA 2 I/O I2C Data input/output. Open drain output; requires resistive pullup to logic high level.
CLKIN 3 I External Reference Clock input. Tie this pin to GND if internal oscillator is used.
ADDR I2C Address selection pin: when ADDR=L, I2C address = 0x2A, when ADDR=H, I2C address =
4 I
0x2B. This input must not be allowed to float.
INTB 5 O Configurable Interrupt output pin. Push-pull output; does not require pullup.
SD Shutdown input: set SD = L for normal operation, set SD=H for inactive mode. This input must
6 I
not be allowed to float.
VDD 7 P Power Supply
GND 8 G Ground
IN0A 9 A External LC sensor 0 connection
IN0B 10 A External LC sensor 0 connection
IN1A 11 A External LC sensor 1 connection
IN1B 12 A External LC sensor 1 connection
IN2A 13 A External LC sensor 2 connection (LDC1614 only)
IN2B 14 A External LC sensor 2 connection (LDC1614 only)
IN3A 15 A External LC sensor 3 connection (LDC1614 only)
IN3B 16 A External LC sensor 3 connection (LDC1614 only)
DAP (2) DAP N/A Connect to Ground
6 Specifications
6.1 Absolute Maximum Ratings
MIN MAX UNIT
VDD Supply Voltage Range 5 V
Vi Voltage on any pin -0.3 VDD+0.3 V
IA Input current on any INx pin -8 8 mA
ID Input current on any Digital pin -5 5 mA
Tj Junction Temperature -55 150 °C
Tstg Storage temperature range -65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(1) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
(1) Electrical Characteristics Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions
result in very limited self-heating of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical
tables under conditions of internal self-heating where TJ > TA. Absolute Maximum Ratings indicate junction temperature limits beyond
which the device may be permanently degraded, either mechanically or electrically.
(2) Register values are represented as either binary (b is the prefix to the digits), or hexadecimal (0x is the prefix to the digits). Decimal
values have no prefix.
(3) Limits are ensured by testing, design, or statistical analysis at 25°C. Limits over the operating temperature range are ensured through
correlations using statistical quality control (SQC) method.
(4) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on
shipped production material.
(5) I2C read/write communication and pull-up resistors current through SCL, SDA not included.
(6) Sensor inductor: 2 layer, 32 turns/layer, 14 mm diameter, PCB inductor with L=19.4 µH, RP=5.7 kΩ at 2 MHz Sensor capacitor: 330 pF
1% COG/NP0 Target: Aluminum, 1.5 mm thickness Channel = Channel 0 (continuous mode) ƒCLKIN = 40 MHz, FIN_DIVIDER0 = b0000,
FREF_DIVIDER0 = 0x0001, RCOUNT0 = 0xFFFF, SETTLECOUNT0 = 0x0100, RP_OVERRIDE = b1, AUTO_AMP_DIS = b1,
DRIVE_CURRENT0 = 0x9800
6 Submit Documentation Feedback Copyright © 2014–2018, Texas Instruments Incorporated
(1) This parameter is specified by design and/or characterization and is not tested in production.
SDA
tBUF
tf tLOW tHD;STA tr
tr tf tSP
SCL
tHD;STA tSU;STA tSU;STO
tHIGH
tHD;DAT tSU;DAT
3.25 3.25
VDD = 2.7 V
3.225 VDD = 3 V
VDD = 3.3 V
3.2 VDD = 3.6 V 3.2
IDD CH0 Current (mA)
3.15 3.15
3.125
Figure 2. Active Mode IDD vs. Temperature Figure 3. Active Mode IDD vs. VDD
60 65
VDD = 2.7 V -40°C 0°C 50°C 100°C
55 VDD = 3 V 60 -20°C 25°C 85°C 125°C
VDD = 3.3 V
VDD = 3.6 V 55
50
Sleep Current (µA)
50
45
45
40
40
35
35
30 30
25 25
-40 -20 0 20 40 60 80 100 120 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 3.6
Temperature (°C) D005
VDD (V) D006
-40°C to +125°C
Figure 4. Sleep Mode IDD vs. Temperature Figure 5. Sleep Mode IDD vs. VDD
1.4 1.6
VDD = 2.7 V -40°C 0°C 50°C 100°C
1.2 VDD = 3 V 1.4 -20°C 25°C 85°C 125°C
VDD = 3.3 V
VDD = 3.6 V 1.2
Shutdown Current (µA)
1
1
0.8
0.8
0.6
0.6
0.4
0.4
0.2 0.2
0 0
-40 -20 0 20 40 60 80 100 120 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 3.6
Temperature (°C) D007
VDD (V) D008
-40°C to +125°C
Figure 6. Shutdown Mode IDD vs. Temperature Figure 7. Shutdown Mode IDD vs. VDD
43.38
43.38
43.37
43.37
43.36
43.36
43.35
43.35
43.34
43.34
43.33 43.33
43.32 43.32
-40 -20 0 20 40 60 80 100 120 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 3.6
Temperature (°C) D009
VDD (V) D010
-40°C to +125°C Data based on 1 unit
Figure 8. Internal Oscillator Frequency vs. Temperature Figure 9. Internal Oscillator Frequency vs. VDD
7 Detailed Description
7.1 Overview
The LDC1612/LDC1614 is an inductance-to-digital converter (LDC) that measures the oscillation frequency of
multiple LC resonators. The device outputs a digital value that is proportional to frequency, with 28 bits of
measurement resolution. This frequency measurement can be converted to an equivalent inductance, or mapped
to the movement of an conductive object. The LDC1612/LDC1614 supports a wide range of inductance and
capacitor combinations with oscillation frequencies varying from 1 kHz to 10 MHz with equivalent parallel
resistances as low as 1.0 kΩ. The device includes a stable internal reference to reduce overall system cost, while
also providing the option to drive a clean external oscillator for improved measurement noise. The conversion
time of the LDC1612/LDC1614 is configurable per channel, where longer conversion times provide higher
effective resolution.
The LDC1612/LDC1614 is configured through a 400-kbit/s I2C bus and includes the ADDR input pin to select an
address. The power supply of the device ranges from 2.7 V to 3.6 V. The only external components necessary
for operation are the supply bypassing capacitors and I2C pull-ups.
40 MHz 40 MHz
CLKIN VDD CLKIN VDD
fREF SD fREF SD
INTB INTB
IN0A Resonant IN0A Resonant
Circuit Circuit
IN0B Driver IN0B Driver
Figure 10. Block Diagrams for the LDC1612 (Left) and LDC1614 (Right)
The LDC1612/LDC1614 is composed of front-end resonant circuit drivers, followed by a multiplexer that
sequences through the active channels, connecting them to the core that measures and digitizes the sensor
frequency (ƒSENSOR). The core uses a reference frequency (ƒREF) to measure the sensor frequency. ƒREF is
derived from either the internal reference clock (oscillator), or an externally supplied clock. The digitized output
for each channel is proportional to the ratio of ƒSENSOR/ƒREF. The I2C interface is used to support device
configuration and to transmit the digitized frequency values to a host processor. The LDC can be placed in an
inactive shutdown mode to reduce current consumption by setting the SD pin to VDD. The INTB pin may be
configured to notify the host of changes in system status.
7.4.4.1 Reset
The device can be reset by writing to RESET_DEV.RESET_DEV. Any active conversion will stop and all
registers will return to their default values. This register bit will always return 0b when read.
7.5 Programming
The LDC1612/4 device uses an I2C interface to access control and data registers. The recommended
configuration procedure is to put the device into Sleep Mode, set the appropriate registers, and then enter
Normal Mode. Conversion results must be read while the device is in Normal Mode. Setting the device into
Shutdown mode will reset the device configuration.
SDA A6 A5 A4 A3 A2 A1 A0 R/W R7 R6 R5 R4 R3 R2 R1 R0
Start by Ack by Ack by
Master Slave Slave
Frame 1 Frame 2
Serial Bus Address Byte Slave Register
from Master Address
1 9 1 9
SCL
1 9 1 9
SCL
SDA A6 A5 A4 A3 A2 A1 A0 R/W R7 R6 R5 R4 R3 R2 R1 R0
Start by Ack by Ack by
Master Slave Slave
Frame 1 Frame 2
Serial Bus Address Byte Slave Register
from Master Address
1 9 1 9 1 9
SCL
Programming (continued)
7.5.2 Pulses on I2C
The I2C interface of the LDC is designed to operate with the standard I2C transactions detailed in the I2C
specification; however it is not suitable for use in an I2C system which supports early termination of transactions.
A STOP condition or other early termination occurring before the normal end of a transaction (ACK) is not
supported and may corrupt that transaction and/or the following transaction. The device is also sensitive to any
(extraneous) pulse on SDA during the SCL low period of the first bit position of the i2c_address byte. To ensure
proper LDC operation, the master device should not transmit this type of waveform. An example of an
unsupported I2C waveform is shown in Figure 13. Any such pulses should not have a duration which exceeds
the device tSP specification.
AVOID SDA PULSE
AFTER START
SDA
SCL
START ADDR
Figure 13. Example of SDA Pulse Between I2C START and ADDR Which Must be Avoided by the I2C
Master
7 6 5 4 3 2 1 0
DATA [27:16]
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
DATA0 15:0]
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
DATA1[27:16]
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
DATA1 [15:0]
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
DATA2 [27:16]
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
DATA2 [15:0]
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
DATA3 [27:16]
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
DATA3[15:0]
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
RCOUNT0
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
RCOUNT1
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
RCOUNT2
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
RCOUNT3
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
OFFSET0
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
OFFSET1
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
OFFSET2
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
OFFSET3
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
SETTLECOUNT0
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
SETTLECOUNT1
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
SETTLECOUNT2
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
SETTLECOUNT3
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
FREF_DIVIDER0
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
FREF_DIVIDER1
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
FREF_DIVIDER2
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
FREF_DIVIDER3
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
RESERVED DRDY RESERVED UNREADCON UNREADCONV UNREADCONV UNREADCONV
V0 1 2 3
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
UR_ERR2INT OR_ERR2INT WD_ERR2INT AH_ERR2INT AL_ERR2INT ZC_ERR2INT Reserved DRDY_2INT
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
INTB_DIS HIGH_CURRE RESERVED
NT_DRV
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
RESERVED DEGLITCH
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
RESERVED
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
INIT_IDRIVE0 RESERVED
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
INIT_IDRIVE1 RESERVED
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
INIT_IDRIVE2 RESERVED
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
INIT_IDRIVE3 RESERVED
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
7 6 5 4 3 2 1 0
DEVICE_ID
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
Eddy d
Current
The eddy current is a function of the distance, size, and composition of the conductor. The eddy current
generates its own magnetic field, which opposes the original field generated by the sensor inductor. This effect is
equivalent to a set of coupled inductors, where the sensor inductor is the primary winding and the eddy current in
the target object represents the secondary inductor. The coupling between the inductors is a function of the
sensor inductor, and the resistivity, distance, size, and shape of the conductive target. The resistance and
inductance of the secondary winding caused by the eddy current can be modeled as a distance dependent
resistive and inductive component on the primary side (coil). Figure 49 shows a simplified circuit model of the
sensor and the target as coupled coils.
Distance-dependent coupling
Eddy M(d)
CPAR
Current
Distance (d)
L(d) RP(d)
CPAR + CTANK
Parallel Electrical
Model, L-C Tank
A resonant oscillator can be constructed by combining a frequency selective circuit (resonator) with a gain block
in a closed loop. The criteria for oscillation are: (1) loop gain > 1, and (2) closed loop phase shift of 2π radians.
The R-L-C resonator provides the frequency selectivity and contributes to the phase shift. At the resonance
frequency, the impedance of the reactive components (L and C) cancels, leaving only RP, the lossy (resistive)
element in the circuit. The voltage amplitude is maximized at this frequency. The RP can be used to determine
the sensor drive current for a given oscillation amplitude. A lower RP requires a larger sensor current to maintain
a constant oscillation amplitude. The sensor oscillation frequency is given by:
9
1 1 5 10 1
¦SENSOR 2
|
2S LC Q Q LC 2S LC
where:
• C is the sensor capacitance (CSENSOR + CPARASITIC)
• L is the sensor inductance
• Q is the quality factor of the resonator. Q can be calculated by: (1)
C
Q RP
L
where:
• RP is the AC parallel resistance of the LC resonator at the operating frequency. (2)
10
8
6
4
2
0
0 1 2 3 4 5 6 7 8
Distance (mm)
Figure 51. Example RP vs. Distance with a 14 mm PCB Coil and 2 mm Thick Stainless Steel Target
It is important to configure the sensor current drive so that the sensor will still oscillate at the minimum RP value
(which typically occurs with maximum target interaction). As an example, if the closest target distance in a
system with the response shown in Figure 51 is 1mm, then the sensor current drive needs to support a RP value
is 5 kΩ. Both the minimum and maximum RP conditions should have oscillation amplitudes that are within the
device operating range. See section Sensor Current Drive Control for details on setting the current drive.
The inductance that is measured by the LDC is:
1
L(d) Linf M(d)
(2S ¦SENSOR )2 C
where:
• L(d) is the measured sensor inductance, for a distance d between the sensor coil and target
• Linf is the inductance of the sensing coil without a conductive target (target at infinite distance)
• M(d) is the mutual inductance
• ƒSENSOR = sensor oscillation frequency for a distance d between the sensor coil and target
• C = CSENSOR + CPARASITIC (3)
Figure 52 shows an example of variation in sensor frequency and inductance as a function of distance for a 14
mm diameter PCB coil (23 turns, 4 mil trace width, 4 mil spacing between traces, 1 oz copper thickness, FR4
material). The frequency and inductance graphs will scale based on the sensor free-space characteristics, and
the target distance scales based on the sensor diameter.
4 24
Target D = 0.5 x coil ‡ Target D = 1 x coil ‡
3.5 21
Inductance (µH)
2.5 15
2 12
1.5 9
Sensor Frequency (MHz)
Inductance (µH)
1 6
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
Target Distance D (mm) D011
The Texas Instruments Application Notes LDC Sensor Design and LDC Target Design provide more information
on construction of sensors and targets charactersitics to consider based on system requirements.
Channel 0
Channel 1
Active Channel
Sensor Signal
The digitized sensor measurement for each channel (DATAx) represents the ratio of the sensor frequency to the
reference frequency.
With FREF_DIVIDERx and FIN_DIVIDERx set to 1, the sensor frequency can be calculated from:
'$7$[ ¦REFx
¦ sensor
228 (4)
The following table illustrates the registers that contain the fixed point sample values for each channel. The
conversion result for each channel, DATAx, can be calculated with:
DATAx = DATAx_MSB×65536 + DATAx_LSB (5)
The typical channel switch delay time between the end of conversion and the beginning of sensor activation of
the subsequent channel is:
Channel Switch Delay = 692 ns + 5 / fref (8)
The deterministic conversion time of the LDC allows data polling at a fixed interval. A data ready flag (DRDY)
can assert the INTB pin for use in interrupt driven system designs (see the STATUS register description in
Register Maps).
Sensor Amplitude
Time
Figure 55. Sensor Full Current Activation vs. Low Power Activation
IDRIVE
Sensor 0
IN0A
Chan 0
IN0B Driver
Sensor 1
IN1A
Chan 1
IN1B Driver
Measurement Core
Sensor 2
IN2A
Chan 2
IN2B Driver
Sensor 3
IN3A
Chan 3
IN3B Driver
If the RP value of the sensor attached to Channel x is known, Table 42 can be used to select the 5-bit value to be
programmed into the IDRIVEx field for the channel. If the measured RP (at maximum spacing between the
sensor and the target) falls between two of the table values, use the current drive value associated with the lower
RP from the table. All channels that use an identical sensor/target configuration can use the same IDRIVEx
value. The appropriate sensor drive current can be calculated with:
IDRIVE = πVP ÷ 4RP (12)
Table 42. Optimum Sensor RP Ranges for Sensor IDRIVEx Setting. (continued)
IDRIVEx Register Field Value Nominal Sensor Minimum Sensor RP Maximum Sensor RP
Current (µA) (kΩ) (kΩ)
9 b01001 59 16.1 23.6
10 b01010 72 13.1 20.4
11 b01011 82 11.5 17.6
12 b01100 95 9.92 15.1
13 b01101 110 8.57 13.0
14 b01110 127 7.42 11.2
15 b01111 146 6.46 9.69
16 b10000 169 5.58 8.35
17 b10001 195 4.83 7.20
18 b10010 212 4.45 6.21
19 b10011 244 3.86 5.35
20 b10100 297 3.17 4.61
21 b10101 342 2.76 3.97
22 b10110 424 2.22 3.42
23 b10111 489 1.93 2.95
24 b11000 551 1.71 2.54
25 b11001 635 1.48 2.19
26 b11010 763 1.24 1.89
27 b11011 880 1.07 1.63
28 b11100 1017 0.93 1.40
29 b11101 1173 0.80 1.21
30 b11110 1355 0.70 1.05
31 b11111 1563 0.60 0.90
Sensors with RP greater than 90 kΩ can be driven by placing a 100 kΩ resistor in parallel with the sensor
inductor to reduce the effective RP.
Sensors which have a wide range of RP may require more than one current drive setting across the range of
operation - the current would need to be dynamically set based on the target position. Note that some high-
resolution applications will experience an output code offset when the current drive is changed. Another
approach for systems which have a wide range of RP is to place a discrete resistor in parallel with the inductor to
limit the range of RP variation in the system. This will also reduce the sensor Q, and so may not be feasible for
some implementations.
IN0A
CH0 ÷ FIN_DIVIDER0
Sensor 0 fSENSOR0 fIN0
Driver (0x14)
IN0B
IN1A
CH1 ÷ FIN_DIVIDER1
Sensor 1 fSENSOR1 fIN1
Driver (0x15)
IN1B
fIN
IN2A(1)
CH2 ÷ FIN_DIVIDER2(1) (1)
Sensor 2(1) fSENSOR2(1) fIN2
Driver (0x16)
IN2B(1)
IN3A(1)
CH3 ÷ FIN_DIVIDER3(1)
Sensor 3(1) fSENSOR3(1) fIN3(1)
Driver (0x17)
(1) Data
IN3B
CONFIG (0x1A) Measurement Output
MUX_CONFIG (0x1B) Core
CLKIN
fCLKIN
÷ FREF_DIVIDER0 fREF0
fINT (0x14)
Int. Osc.
÷ FREF_DIVIDER1
fREF1
(0x15)
REF_CLK_SRC
(0x1A) fREF
÷
FREF_DIVIDER2(1) fREF2(1)
(0x16)
÷
FREF_DIVIDER3(1) fREF3(1)
(0x17)
Table 44 shows the clock configuration registers. Each input channel has a dedicated configuration which can be
set independently.
See the STATUS (Table 25) and ERROR_CONFIG (Table 26) register descriptions in the Register Map section.
These registers can be configured to trigger an interrupt on the INTB pin for certain events. The following
conditions must be met:
1. The error or status register must be unmasked by enabling the appropriate register bit in the
ERROR_CONFIG register.
2. The INTB function must be enabled by setting CONFIG.INTB_DIS to 0.
When a bit field in the STATUS register is set, the entire STATUS register content is held until read or until the
DATAx_MSB register is read. Reading also de-asserts INTB. After first starting conversions in active mode, the
first read of STATUS should performed be after assertion of INTB.
Interrupts are cleared by one of the following events:
1. Entering Sleep Mode
2. Power-on reset (POR)
3. Device enters Shutdown Mode (SD is asserted)
4. S/W reset
5. I2C read of the STATUS register: Reading the STATUS register will clear any error status bit set in STATUS
along with the ERR_CHAN field and de-assert INTB
Setting register CONFIG.INTB_DIS to b1 disables the INTB function and holds the INTB pin high.
The TI Application Note LDC1312, LDC1314, LDC1612, LDC1614 Sensor Status Monitoring provides detailed
information on sensor status reporting.
Channel 0
Channel 1
x x
x x
I2C Data N-1 I2C read Channel 0 Conversion N was overwritten when
& INTB deassert #2 Conversion N+1 completed
Channel 1 Conversion N is overwritten when
x x
Conversion N+1 completed
The STATUS register (Address 0x18) flags UNREADCONVx monitor the accesses to the DATAx registers.
When the DATAx_MSB register is read, the DATAx_LSB register is updated with the corresponding LSB
conversion data, and the UNREADCONVx flag is cleared. If the DATAx_LSB register alone is read, it will not
update and will continuously return data corresponding to the last DATAx_MSB register read.
As shown in Figure 58 , if the I2C data readback is delayed, then it is possible to lose older, unread conversion
results. Monitoring the UNREADCONVx flags are useful to assess whether data loss is occurring.
A delayed read of previous conversion results can produce the condition in which reading the STATUS register
immediately after INTB asserts shows that Channel 0 has no unread data (where the UNREADCONV0 flag is 0),
but other channels do have unread data indicated by the corresponding UNREADCONVx flags.
MCU
VDD
CLKIN VDD
40 MHz
SD
GPIO
INTB
IN0A GPIO
Target
IN0B
Sensor 0
Core
GND
IN1A
SDA
Target I 2C
IN1B I 2C SCL Peripheral
3.3 V
Sensor 1 ADDR
GND
2.4E+7 160
Target D = 1 x coil ‡ Target D = 2 x coil ‡ Ref Count = 0xFFFF Ref Count = 0x000F
140 Ref Count = 0x0FFF Ref Count = 0x0004
2.2E+7 Ref Count = 0x00FF
60
1.6E+7
40
1.4E+7
20
1.2E+7 0
0 5 10 15 20 25 30 0 40% 80% 120% 160% 200%
Target Distance D (mm) D014
Target Distance / ‡SENSOR D021
Figure 60. Output Code vs. Target Distance (0 to 30mm) Figure 61. Measurement Precision in Distance vs. Target
Distance (0 to 30mm)
0.8
0.7
Measurement Precision (µm)
0.6
0.5
0.4
0.3
0.2
0.1
0
10% 20% 30% 40% 50% 60% 70% 80% 90% 100%
Target Distance / ‡SENSOR D022
Figure 62. Measurement Precision in Distance vs. Target Distance (0 to 10mm)
150.0
125.0
Ls (µH)
100.0
75.0
50.0
25.0
0.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
Frequency (MHz)
In Figure 63, the inductor has a SRF at 6.38 MHz; therefore the inductor should not be operated above 0.8×6.38
MHz, or 5.1 MHz.
10 Layout
11.6 Trademarks
E2E is a trademark of Texas Instruments.
WEBENCH is a registered trademark of Texas Instruments.
11.7 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.8 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
www.ti.com 6-Jul-2023
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)
LDC1612DNTR ACTIVE WSON DNT 12 4500 RoHS & Green NIPDAU | SN Level-1-260C-UNLIM -40 to 125 LDC1612 Samples
LDC1612DNTT ACTIVE WSON DNT 12 250 RoHS & Green NIPDAU | SN Level-1-260C-UNLIM -40 to 125 LDC1612 Samples
LDC1614RGHR ACTIVE WQFN RGH 16 4500 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 LDC1614 Samples
LDC1614RGHT ACTIVE WQFN RGH 16 250 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 LDC1614 Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com 6-Jul-2023
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 9-Aug-2022
B0 W
Reel
Diameter
Cavity A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
W Overall width of the carrier tape
P1 Pitch between successive cavity centers
Sprocket Holes
Q1 Q2 Q1 Q2
Pocket Quadrants
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 9-Aug-2022
Width (mm)
H
W
Pack Materials-Page 2
PACKAGE OUTLINE
DNT0012B SCALE 3.000
WSON - 0.8 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
4.1 A
B
3.9
0.8
0.7
C
SEATING PLANE
0.05 0.08 C
0.00
EXPOSED
THERMAL PAD 2.6 0.1 (0.1) TYP
6
7
2X
2.5 3 0.1
10X 0.5
12
1 0.3
12X
0.2
0.5 0.1 C A B
PIN 1 ID 12X
(45 X 0.25) 0.3 0.05 C
4214928/C 10/2021
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
www.ti.com
EXAMPLE BOARD LAYOUT
DNT0012B WSON - 0.8 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
(2.6)
1
12
12X (0.25)
(1.25)
SYMM
(3)
10X (0.5)
7
6
(R0.05) TYP
( 0.2) VIA (1.05)
TYP
(3.8)
0.07 MIN
0.07 MAX
ALL AROUND
ALL AROUND
4214928/C 10/2021
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
www.ti.com
EXAMPLE STENCIL DESIGN
DNT0012B WSON - 0.8 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
SYMM
METAL (0.68)
12X (0.6) TYP
1
12
12X (0.25)
(0.76)
SYMM
10X (0.5)
4X
(1.31)
(R0.05) TYP
6 7
4X (1.15)
(3.8)
EXPOSED PAD
77% PRINTED SOLDER COVERAGE BY AREA
SCALE:20X
4214928/C 10/2021
NOTES: (continued)
5. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
www.ti.com
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